KR102522181B1 - Electrostatic chuck and use of electrostatic chuck - Google Patents

Abstract

The present invention relates to electrostatic chucks and uses of electrostatic chucks. The present application provides an electrostatic chuck with improved chucking and dechucking processability through adjustment of electrode patterns and application of fine holes, and a method for manufacturing an optical device with improved product quality and productivity by using the electrostatic chuck.

Description

Electrostatic chuck and use of electrostatic chuck}

The present invention relates to electrostatic chucks and uses of electrostatic chucks.

An optical device including an optical functional layer such as a liquid crystal layer between an upper substrate and a lower substrate may be manufactured through processes such as liquid crystal injection and one drop filling (ODF). As the substrate, for example, a glass substrate or a plastic film may be used. Specifically, in order to implement a flexible optical device, a plastic film may be used as the substrate. Unlike a glass substrate, the plastic film has a flexible property and is difficult to fix to a stage in a flat state, causing defects. there is.

In order to improve this, an electrostatic chuck may be applied to fix the plastic film, and defects should not occur during chucking and dechuching. For example, when the electrostatic force is weak during chucking, if the film is not fixed and the electrostatic discharge does not occur quickly during dechucking, damage to the film cell occurs and productivity is greatly reduced.

Patent Document 1: Korean Patent Publication No. 2011-0020221

The present application provides an electrostatic chuck with improved chucking and dechucking processability through adjustment of electrode patterns and application of fine holes, and a method for manufacturing an optical device with improved product quality and productivity by using the electrostatic chuck.

This application relates to an electrostatic chuck. In the present application, an electrostatic chuck refers to a device having a function of fixing an object using electrostatic force. In one example, the object may be a substrate of an optical device, and the electrostatic chuck may function to fix the substrate during a manufacturing process of the optical device.

1 (a: side view, b: front view) shows the structure of the electrostatic chuck of the present application by way of example. As shown in FIG. 1 , the electrostatic chuck may include a stage 10, a patterned electrode layer 20 disposed on the stage 10, and a dielectric layer 30 disposed on the patterned electrode layer 20. . The patterned electrode layer may include a plurality of electrode domains 200 spaced apart from each other, and an area of one electrode domain may be 400 mm ² or more. The electrostatic chuck may further include a micro hole 40 . The fine holes may pass through the stage, the patterned electrode layer, and the dielectric layer and exist in an empty state.

The electrostatic chuck of the present application can improve chucking efficiency by enhancing electrostatic force by adjusting the area of one electrode domain of the patterned electrode layer within the above range. In addition, since the electrostatic chuck of the present application can push a physically fixed object after electrostatic discharge through hole blowing by applying the micro-holes, dechucking efficiency can also be improved.

The stage may serve as a substrate for an electrostatic chuck. The stage may include, for example, ceramic, polyimide or copper. The thicker the stage, the better the flatness of the stage and the physical pressure during bonding. The thickness of the stage may be, for example, in the range of 10 mm to 100 mm.

The patterned electrode layer may generate electrostatic force on the top surface of the dielectric layer when power is applied. With the electrostatic force, an object stationary on the dielectric layer may be fixed flat by electrostatic adsorption.

The patterned electrode layer may include a plurality of electrode domains spaced apart from each other. In the present application, an electrode domain may refer to one electrode region that is physically separable from the patterned electrode layer. The plurality of electrode domains may be separated by, for example, an insulating region. The insulating region may be filled with a material of a dielectric layer on the patterned electrode layer. Thus, the insulating region may be filled with polyimide or ceramic.

As described above, the area of one electrode domain may be greater than or equal to 400 mm ² . In the present application, by adjusting the area of one electrode domain of the patterned electrode layer within the above range, it is possible to improve chucking efficiency by enhancing electrostatic force. An upper limit of the electrode domain may be, for example, 10,000 mm ² or less. If the area of the electrode domain is too large, the chucking force may rather decrease, so the upper limit of the area of the electrode domain is preferably within the above range.

A total area of the plurality of electrode domains may be 80% to 90% of the total area of the stage. When the total area ratio of the plurality of electrode domains of the patterned electrode layer is within the above range, the electrostatic force may be enhanced to further improve chucking efficiency.

An interval between adjacent electrode domains in the patterned electrode layer may be, for example, in the range of 3 mm to 8 mm. If the gap is too wide, electrostatic force does not act on the electrode film placed on the electrostatic chuck, and the electrode film may float at the part where the gap is widened.

The thickness of the patterned electrode layer may be appropriately selected in consideration of the purpose of the present application. The thickness of the patterned electrode layer may be, for example, in the range of 18 μm to 60 μm. If the thickness of the pattern electrode layer is too thin, the electrode layer may be vulnerable to damage, and if it is too thick, the voltage for generating electrostatic force may need to be increased. Therefore, it may be advantageous to adjust the thickness of the electrode layer within the above range.

A shape of the electrode domain of the patterned electrode layer may be selected to be similar to that of the optical device substrate. Each of the plurality of electrode domains may have a predetermined shape. In one example, each of the plurality of electrode domains may have a rectangular shape. In this case, the plurality of electrode domains may have a structure regularly arranged along the transverse and/or longitudinal directions of the stage.

The patterned electrode layer may include a conductive material suitable for generating electrostatic force. The patterned electrode layer may include, for example, at least one selected from the group consisting of copper, platinum, silver, palladium, tungsten, aluminum, tin, magnesium, and nickel.

The pattern electrode layer receives external power to generate electrostatic force. The external power may be applied by, for example, a connector connecting the stage and the patterned electrode layer.

In the present application, the dielectric layer may refer to a layer including a material that generates electric polarization but does not generate direct current when an electrostatic field is applied. The dielectric layer may be fixed flat by electrostatic adsorption of an object placed thereon with electrostatic force generated from the patterned electrode layer.

The thickness of the dielectric layer may be appropriately selected in consideration of the purpose of the present application. In one example, the thickness of the dielectric layer may be thicker than the thickness of the patterned electrode layer. When the thickness of the dielectric layer is thinner than the thickness of the electrode layer, exposure and damage to the electrode layer are concerned, and when the thickness is too thick, the film substrate may be damaged due to a step with the electrode pattern layer. The thickness of the dielectric layer may be, for example, 100 μm to 500 μm.

The dielectric layer may include a material of a dielectric layer known in the art related to an electrostatic chuck. For example, the dielectric layer may include ceramic or polyimide, for example.

The electrostatic chuck may include a micro hole with an empty inside passing through the stage, the patterned electrode layer, and the dielectric layer. In the present application, the fact that the inside of the micro-hole is empty may mean that no material is arbitrarily injected after the micro-hole is drilled.

In one example, the micro-holes may continuously pass through the stage, the patterned electrode layer, and the dielectric layer. Accordingly, the electrostatic chuck may be opened by penetrating the stage, the patterned electrode layer, and the dielectric layer through a single micro hole.

The microholes may have a pillar shape. An axis of a columnar height of the micro hole may be parallel to a thickness direction of the electrostatic chuck. Parallelism in this application includes manufacturing errors, and may include manufacturing errors within the range of ±10 degrees, ±5 degrees, and ±3 degrees. In one example, the height of the pillar shape of the micro hole may be the same as the total thickness of the stage, the patterned electrode layer, and the dielectric layer.

The cross-sectional shape of the micro-holes may be appropriately adjusted within a range that does not impair the purpose of the present application. The cross-section of the fine hole may have a circular shape, an elliptical shape, a polygonal shape, or an atypical shape.

The cross-sectional size of the microholes may be appropriately adjusted within a range capable of securing dechucking fairness. The size of the cross section of the microhole may mean the diameter when it is circular, and may mean the average size of the cross section when it is not circular.

In one example, the cross-sectional size of the microholes may be, for example, 1.5 mm or less. The size of the cross section of the fine hole may be, for example, 0.5 mm or more. If the size of the fine hole is too large, it may damage the film substrate, and if the size of the fine hole is too small, the air pressure may be weak or may not be perforated, so it may be preferable that the size of the fine hole is adjusted within the above range.

The electrostatic chuck may include a plurality of micro holes. Each of the plurality of fine holes may be spaced apart from each other. In the electrostatic chuck, intervals between fine holes may be appropriately selected so as to be uniformly distributed over the entire area of the stage. The spacing of the fine holes in the patterned electrode layer may be, for example, in the range of 50 mm to 150 mm. Specifically, the distance between the fine holes penetrating one electrode domain in the patterned electrode layer may be in the range of 50 nm to 150 nm.

The electrostatic chuck may further include a cushion pad. The cushion pad may be used to ensure precise flatness of the stage when the films are bonded. Even if the precision of the stage itself is high, there is a thickness variation of the electrode film itself placed on the electrostatic chuck. To overcome this, if a cushion pad is applied, the pressure can be applied as uniformly as possible. The cushion pad may be disposed on the dielectric layer, for example. For example, the cushion pad may be attached to the dielectric layer via an adhesive.

The thickness of the cushion pad may be appropriately adjusted within a range capable of performing the function. The thickness of the cushion pad may be in the range of 2 mm to 4 mm, for example. The cushion pad may include, for example, ethylene vinyl acetate or a poron-based material.

The electrostatic chuck of the present application can be manufactured in the following way. For example, the method of manufacturing an electrostatic chuck of the present application includes forming a patterned electrode layer including a plurality of electrode domains disposed spaced apart from each other on a stage, and wherein an area of one of the electrode domains is 400 mm ² or more; forming a dielectric layer on the patterned electrode layer; and forming fine holes to continuously pass through the stage, the patterned electrode layer, and the dielectric layer.

In the above, the patterned electrode layer may be formed by cutting the electrode layer and then attaching it to the stage to have a desired pattern. A method of attaching the electrode layer to the stage may be performed by, for example, a thermal compression method within a range of about 100°C to 200°C.

In the above, the micro-holes may be formed by drilling through a micro-drill or a laser, for example.

In the above, the dielectric layer may be formed by applying a dielectric material on the patterned electrode layer. A method of applying the dielectric material is not particularly limited and may be performed by a known coating method or deposition method.

In the above method, the contents described in the above section of the electrostatic chuck may be equally applied unless otherwise specified.

This application also relates to the use of the electrostatic chuck. The electrostatic chuck of the present application can be used to hold flat a substrate for an optical device, for example, during manufacture of the optical device. The substrate for the optical device may be, for example, an electrode film.

Accordingly, the present application relates to a substrate for an optical device including the electrostatic chuck and an electrode film fixed to the electrostatic chuck by electrostatic force. The electrode film may be fixed on the dielectric layer of the electrostatic chuck by electrostatic adsorption.

The electrode film may include a plastic film and a conductive layer formed on the plastic film.

Examples of the plastic film include a polyester film such as a polycarbonate (PC) film, a polyethylene naphthalate (PEN) film, and a polyethyleneterephthalate (PET) film, an acrylic film such as a poly (methyl methacrylate) (PMMA) film, and a triacetyl cellulose (TAC) film. Cellulose polymer film, PE (polyethylene) film, PP (polypropylene) film, olefin film such as COP (cycloolefin polymer) film, polybenzimidazole film, polybenzoxazole film, polybenzazole film, polybenzthiazole film, or A polyimide film or the like may be exemplified, but is not limited thereto. The thickness of the film may also be selected in consideration of the level of materials applied to general optical devices.

As the conductive layer, for example, conductive polymers, conductive metals, conductive nanowires, or metal oxides such as ITO (Indium Tin Oxide) may be deposited and formed. In addition, various materials and formation methods capable of forming the transparent electrode are known, and these can be applied without limitation.

In addition, a functional layer such as a liquid crystal alignment layer may be additionally formed on the conductive layer. Meanwhile, although the electrode film was exemplified as a substrate for an optical device in the above, a substrate having the conductive layer formed on a glass substrate may also be used.

This application also relates to a method of manufacturing an optical device using the electrostatic chuck. Since the electrostatic chuck can improve chucking and dechucking processability through adjustment of electrode patterns and application of fine holes, optical devices with improved product quality and productivity can be manufactured by using the electrostatic chuck.

The optical device manufacturing method of the present application includes a chucking step of fixing a first electrode film to a first electrostatic chuck by electrostatic force and fixing a second electrode film to a second electrostatic chuck by electrostatic force, the first electrode A dechucking step of attaching the film and the second electrode film and separating the first electrode film from the first electrostatic chuck and separating the second electrode film from the second electrostatic chuck may be included. The first electrostatic chuck and the second electrostatic chuck may each be the aforementioned electrostatic chuck. Accordingly, unless otherwise specified, the above-described electrostatic chuck may be equally applied to the first electrostatic chuck and the second electrostatic chuck.

The chucking step may be performed by applying power to the patterned electrode layer of the electrostatic chuck to generate an electrostatic force between the electrostatic chuck and an electrode film. The electrode film may be electrostatically adsorbed and fixed to the dielectric layer of the electrostatic chuck by the electrostatic force.

The dechucking step may be performed by cutting off power to the patterned electrode layer of the electrostatic chuck. When the power is cut off, the electric charge concentrated between the electrode film and the electrostatic chuck escapes, and the electrostatic force is discharged. The electrode film may be separated from the electrostatic chuck by releasing the electrostatic force.

The dechucking step may be performed by performing air blowing through minute holes of the first electrostatic chuck and the second electrostatic chuck. Even if the power is cut off in the dechucking step, the electrode film may not be easily detached from the electrostatic chuck due to residual static electricity. According to the present application, since it is possible to push a physically fixed object after electrostatic discharge through air injection through fine holes, dechucking efficiency can also be improved.

The air blowing may be performed after power is cut off. Specifically, the air injection may be performed by introducing external air into the microhole through an air hose installed in the electrostatic chuck and discharging the introduced air onto the first electrostatic chuck and the second electrostatic chuck.

The dechucking step is specifically performed after bonding the first electrode film and the second electrode film, after power is cut off to the pattern electrode layer, after performing air blowing, and then the first electrostatic chuck and the second electrostatic chuck, respectively. It may proceed in the order of separating the electrode film and the second electrostatic chuck.

Between the chucking and dechucking steps, forming an optical functional layer between the first electrode film and the second electrode film (S-2a) may be performed. In addition, between the chucking step and the dechucking step, a step (S-2b) of bonding the first electrode film and the second electrode film may also be performed.

The order of forming the optical functional layer (S-2a) and attaching the first electrode film and the second electrode film (S-2b) may be reversed.

In one example, when step (S-2a) is performed first and then step (S-2b) is performed, a layer of an optical functional material is applied in a region divided by sealant lines formed on the first electrode film, , For example, after forming the optical functional layer by a One Drop Filling (ODF) method, the second electrode film may be bonded.

In another example, if step (S-2a) is performed after step (S-2b) is performed first, the first electrode film and the second electrode film are bonded through a sealant so as to maintain a constant distance, and then , An optical functional layer may be formed by injecting an optically functional material into a partial region of the sealant.

In one example, a sealant may be applied to any one of the first electrode film and the second electrode film. In this case, the electrostatic chuck to which the electrode film to which the sealant is not applied may be fixed, and may include the cushion pad described above. When the first electrode film and the second electrode film are bonded together, if the flatness of the electrostatic chuck is not precise, the bonding may not be uniform. When a cushion pad is applied, it can be bonded uniformly when bonding films. However, the lower electrode film on which the sealant is formed does not include a cushion pad, and the reason why it is preferable that the upper electrode film on which the sealant is not formed includes a cushion pad is that the cushion pad itself is not flat compared to the electrostatic chuck, so there is a step difference with the seal dispenser. This is because the sealant may not be applied uniformly due to the non-uniformity of the sealant.

After bonding the first electrode film and the second electrode film, a process of curing the sealant by a known sealant curing method, such as application of heat and/or irradiation of ultraviolet rays, may be further included.

As the sealant, a sealant known in the art may be appropriately selected and used. For example, as the sealant, an epoxy-based sealant, a urethane-based sealant, or a phenol-based sealant, etc. may be applied as a known ultraviolet or thermosetting sealant.

The optical functional layer may include an optical functional material.

In one example, the optical functional layer may be a light modulation layer. In the present application, the light modulation layer may refer to a layer including a light modulation material capable of transmitting or blocking light depending on whether an external action is applied.

The optical modulation layer may be, for example, a liquid crystal layer, an electrochromic material layer, an electrophoretic material layer, or a dispersed particle alignment layer.

In one example, the light modulation layer may be a liquid crystal layer including a liquid crystal compound. The liquid crystal compound may exist in the liquid crystal layer in a state in which an orientation can be switched, for example. In the present application, "alignment is switchable" may mean that the alignment direction of the liquid crystal compound may be changed by an external action. The external action may be, for example, application of a voltage.

The liquid crystal compound may be a mesogen compound. In this application, the term "mesogen compound" refers to a compound having a mesogen structure, and the term "mesogen" refers to a structure capable of inducing structural order in a crystal, and the category of the mesogen may include all kinds of rigid structures known to be able to induce alignment of molecules in a predetermined direction in a liquid crystal compound.

The type of mesogen compound usable in the present application is not particularly limited. In one example, in the present application, as a known liquid crystal compound, for example, a nematic compound, a smectic compound, or a cholesteric compound may be used as the mesogen compound. In one example, the mesogen compound may be a non-reactive mesogen compound having no reactive group.

In one example, the liquid crystal layer may further include an anisotropic dye. The anisotropic dye may perform a function of adjusting blocking characteristics of an optical device.

In the present application, the term "dye" may refer to a material capable of intensively absorbing and/or transforming light in at least some or the entire range in the visible light region, for example, in the wavelength range of 400 nm to 800 nm, The term "anisotropic dye" may refer to a material capable of anisotropic absorption of light in at least a part or the entire range of the visible light region.

As the anisotropic dye, for example, all kinds of dyes known to have the characteristics described above and to be aligned according to the alignment of the liquid crystal compound may be used.

As the anisotropic dye, for example, a known dye known to have a characteristic that can be arranged according to the orientation of the liquid crystal compound can be selected and used. Examples of such anisotropic dyes include azo dyes, anthraquinone dyes, methine dyes, azomethine dyes, oxadine dyes, azo dyes, styryl dyes, coumarin dyes, porphyrin dyes, and dibenzo dyes. At least one dye selected from the group consisting of furanone-based dyes, tiketophyllolophyllol-based dyes, rhodamine-based dyes, xanthenic dyes, and philomethene-based dyes may be used.

The liquid crystal layer may further include an optional additive such as a chiral agent, a polymer, or a conductivity modifier, depending on a driving mode.

In another example, the light modulation layer may be an electrochromic material layer. When the light modulation layer is an electrochromic material layer, the electrochromic material layer may include an electrochromic material. The term “electro chromic material” may refer to a material whose color changes through an oxidation-reduction reaction in response to an external action, for example, voltage applied. Specifically, when the optical functional layer is an electrochromic material layer including an electrochromic material, the optical device is an electrochromic display (ECD) inducing light modulation using oxidation-reduction of a material can be

In another example, the light modulation layer may be an electrophoretic material layer. When the light modulation layer is an electrophoretic material layer, the electrophoretic material layer may include an electrophoretic material. The term “electrophoretic material” may refer to a material exhibiting an electrophoretic phenomenon that exhibits movement in response to an external action, for example, voltage application. Specifically, when the light modulation layer is an electrophoretic material layer including an electrophoretic material, the optical device is an electrophoretic image display (EPD) that induces light modulation using an electrophoretic phenomenon of the material. ) can be

The electrochromic material and electrophoretic material are known by Korean Patent Publication No. 2015-0055376, etc., and the known electrochromic material and electrophoretic material are limited in this application Adopted without, it may be included in the electrochromic material layer or the electrophoretic material layer.

In another example, the light modulation layer may be a dispersed particle alignment layer. The dispersed particle alignment layer may include electrically dispersed particles. In this application, the term "electrically dispersed particles" may implement a transmission mode by maintaining orientation in a certain direction when an external action, for example, an electric field is applied, and may move in a random direction due to Brownian motion when an electric field is not applied. It may refer to particles capable of implementing a blocking mode by being oriented. Specific types of the electro-dispersion particles are also known, and in the present application, the known electro-dispersion particles may be used without limitation.

In another example, the optical functional layer may be a light emitting layer including a light emitting material. In this application, the term "light emitting layer" may refer to a layer including a light emitting material capable of emitting light by application of an external action. Specifically, when the optical functional layer is a light emitting layer, the optical device may be an electroluminescent display device, for example, an inorganic electroluminescent display device (Inorganic ELD). In addition, the light emitting layer may include a light emitting material, and a specific type of the light emitting material is, for example, a material that can be used in an inorganic electroluminescent display device and is known from Korean Patent Laid-Open No. 2011-0020536. Any and the like can be used without limitation in this application.

In addition, the optical device manufactured by the above method can be applied to various purposes such as a smart window or a display device. In this application, the smart window is a window capable of adjusting the transmittance of light, and is also referred to as a smart blind, an electronic curtain, a variable transmittance glass, or a dimming glass.

The present application provides an electrostatic chuck with improved chucking and dechucking processability through adjustment of electrode patterns and application of fine holes, and a method for manufacturing an optical device with improved product quality and productivity by using the electrostatic chuck.

1 is a schematic diagram of an electrostatic chuck according to an embodiment of the present application.
2 is a schematic diagram of an electrostatic chuck of a comparative example.
3 is a schematic diagram of chucking force evaluation.
4 is a schematic front view in which an ITO film is fixed to an electrostatic chuck.
5 : is a schematic diagram of the peeling evaluation of a protective film.
6 is a schematic diagram of dechucking fairness evaluation.

Although the present application is specifically described through the following examples, the scope of the present application is not limited by the following examples.

Example One. electrostatic manufacturing

The electrostatic chuck of Example 1 was prepared to have the pattern shape of FIG. 1 . Specifically, after forming an electrode layer (material: copper) 20 having a thickness of 18 μm patterned as shown in the structure of FIG. 1 on a stage (material: ceramic) 10 having a thickness of 20 mm, on the electrode layer A dielectric layer (material: polyimide) 30 having a thickness of 200 μm was formed thereon. The total area of the stage is 120,000 mm ² , the area of one electrode domain 200 is 900 mm ² , and the interval between the domains is 5 mm. In the electrostatic chuck, micro-holes were formed using a micro-drill to continuously pass through all of the stage, the patterned electrode layer, and the dielectric layer. The diameter of the fine hole was formed to be 1.0 mm.

comparative example One. electrostatic manufacturing

The structure of FIG. 2 was prepared as the electrostatic chuck of Comparative Example 1. Specifically, after forming an electrode layer (material: copper) 20 having a thickness of 18 μm patterned as shown in the structure of FIG. 2 on a stage (material: ceramic) 10 having a thickness of 20 mm, A dielectric layer (material: polyimide) 30 having a thickness of 200 μm was formed. The total area of the stage was 120,000 mm ² . No micro holes were formed in the electrostatic chuck.

comparative example 2

An electrostatic chuck was prepared in the same manner as in Example 1, except that the area of the entire stage and the electrode layer was the same as in Example 1, but the size per domain of the patterned electrode layer was changed to 11,000 mm ² .

evaluation example One. chucking power evaluation

The chucking force was evaluated according to the schematic diagram of FIG. 4 .

Specifically, a film (hereinafter referred to as ITO film) 50 having an ITO layer formed on a PET film was prepared. A protective film (E6 for polarizing plate, manufacturer: LG Chem) 60 is laminated on the ITO layer of the ITO film. After the ITO film was left on the electrostatic chucks of Example 1, Comparative Example 1, and Comparative Example 2, respectively, power was applied to fix the ITO film by electrostatic force. 3 shows a schematic front view of the ITO film fixed to the electrostatic chuck of Comparative Example 1 (a) and Example 1 and Comparative Example 2 (b). Next, a measuring instrument (SHIMPO FGJN-20B) 70 was attached on the protective film, and the peeling force was measured while pulling in a direction of 180 degrees (direction A) at a peeling speed of 300 mm/min.

evaluation example 2. Evaluation of protective film peeling

Peel evaluation of the protective film was performed according to the schematic diagram of FIG. 5 .

Specifically, while peeling the protective film 60 from the ITO film fixed to the electrostatic chuck prepared in Evaluation Example 1 in the B direction using a clamp, the peeled surface was observed to evaluate the peeling fairness.

evaluation example 3. dechucking ( Decucking ) fairness evaluation

Dechucking fairness was evaluated according to the schematic diagram of FIG. 6 .

Specifically, a film in which an ITO layer was formed on a PET film (hereinafter referred to as an ITO film) was prepared. After the ITO film was placed on the electrostatic chucks of Example 1, Comparative Example 1, and Comparative Example 2, respectively, voltage was applied to fix the ITO film by electrostatic force. In the same manner as described above, the ITO films 501 and 502 were fixed to the electrostatic chucks 101, 201, 301, 102, 202, and 302 to prepare a first substrate and a second substrate, respectively. A sealant was drawn on the ITO film 501 of the first substrate to form a seal line, and liquid crystal was applied to an inner region of the seal line 60 to form an optical functional layer 70 . Next, the ITO film 502 of the second substrate was bonded to the ITO film 501 of the first substrate to manufacture an optical device. In the first substrate and the second substrate, while dechucking after turning off the voltage to the electrostatic chuck (manually removing the electrostatic chuck by hand), damage to the optical device and dechucking fairness were evaluated. In the case of Example 1 and Comparative Example 2, dechucking was performed by performing air injection through a fine hole after cutting off the voltage, and in the case of Comparative Example 1, dechucking was performed without air injection.

The results of Evaluation Examples 1 to 3 are summarized in Table 1 below.

As a result of the evaluation of the chucking force, Example 1 and Comparative Example 2 exhibited a higher 180 degree peel force than Comparative Example 1 and showed excellent chucking force. In addition, it can be seen that Example 1 has more excellent 180-degree peel strength than Comparative Example 2.

As a result of peeling evaluation of the protective film, as shown in FIG. 5(A), in Example 1, the protective film 60 was well peeled from the electrode film 50, but in Comparative Examples 1 and 2, the electrostatic chuck It can be confirmed that the electrode film 50 is peeled off from the dielectric layer 30 and the protective film is not peeled off.

As a result of evaluating the dechucking fairness, Example 1 showed good separation of the electrode films 501 and 502 and the electrostatic chucks 301 and 302 as shown in FIG. 6(A), but Comparative Example 1 showed that FIG. ), as the second electrode film 502 is peeled off from the first electrode film 501, separation between the electrode films is made, so it can be confirmed that the dechucking processability is lowered. In addition, in Comparative Example 2, similarly to Comparative Example 1, it can be confirmed that the separation between the electrode films is made.

Comparative Example 1 Comparative Example 2 Example 1 Chucking force (180 degree peel force) 1.1 kgf 2.1 kgf 3.5 kgf Protective film peeling evaluation Bad (protective film not peeled off) Bad (protective film not peeled off) Good (protective film removed) Dechucking Fairness Poor (Separation between ITO films) Poor (Separation between ITO films) Good (Separation of ITO film and electrostatic chuck)

Reference Numerals 10, 101, 102: stage, 20, 201, 202: patterned electrode layer, 200: electrode domain 30, 301, 302: dielectric layer, 40: fine hole, 50, 501, 502: electrode film, 60: protective film 70: instrument A: Direction of pulling the protective film B: Direction of peeling

Claims (17)

A chucking step of fixing the first electrode film to the first electrostatic chuck by electrostatic force and fixing the second electrode film to the second electrostatic chuck by electrostatic force; and
a dechucking step of separating the first electrode film from the first electrostatic chuck and separating the second electrode film from the second electrostatic chuck;
Further comprising forming an optical functional layer between the first electrode film and the second electrode film and bonding the first electrode film and the second electrode film, which is performed between the chucking step and the dechucking step,
The first electrostatic chuck and the second electrostatic chuck each include a stage, a patterned electrode layer disposed on the stage, and a dielectric layer disposed on the patterned electrode layer, wherein the patterned electrode layer includes a plurality of electrode domains disposed spaced apart from each other; , the area of one electrode domain is 10,000 mm ² or less,
The first electrostatic chuck and the second electrostatic chuck each include a micro hole having an empty interior that penetrates the stage, the patterned electrode layer, and the dielectric layer, and the dechucking step is performed by passing air through the micro hole of the first electrostatic chuck and the second electrostatic chuck. A method of manufacturing an optical device performed by performing air blowing. The method of claim 1, wherein the stage comprises ceramic, polyimide or copper. The method of claim 1 , wherein the plurality of electrode domains are separated by insulating regions. The method of claim 1 , wherein each of the plurality of electrode domains has a predetermined shape and is regularly arranged along a transverse direction or a longitudinal direction of the stage. The method of claim 1 , wherein the patterned electrode layer includes at least one material selected from the group consisting of copper, platinum, silver, palladium, tungsten, aluminum, tin, magnesium, and nickel. The method of claim 1, wherein the dielectric layer comprises ceramic or polyimide. The method of claim 1, wherein the micro-holes continuously pass through the stage, the patterned electrode layer, and the dielectric layer. The method of claim 1 , wherein the size of the cross-section of the fine hole is in the range of 0.5 mm to 1.5 mm. The method of claim 1 , wherein each of the first electrostatic chuck and the second electrostatic chuck includes a plurality of micro-holes, and the micro-holes are spaced apart from each other. The method of claim 1 , wherein an interval between the fine holes penetrating one of the electrode domains is within a range of 50 mm to 150 mm. The method of claim 1, wherein each of the first electrostatic chuck and the second electrostatic chuck further includes a cushion pad on a dielectric layer. 12. The method of claim 11, wherein the thickness of the cushion pad is in the range of 2 mm to 4 mm. 12. The method of claim 11, wherein the cushion pad includes ethylene vinyl acetate or a poron-based material. The method of claim 1 , wherein the air injection introduces external air into the microholes through air hoses installed in the first electrostatic chuck and the second electrostatic chuck, and the introduced air is discharged onto the first electrostatic chuck and the second electrostatic chuck. A method of manufacturing an optical device performed by enabling. delete delete delete

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