KR20200088639A - Electrostatic chuck and use of electrostatic chuck - Google Patents

Abstract

The present invention relates to an electrostatic chuck and to the use of the electrostatic chuck. The present application provides an electrostatic chuck with improved chucking and dechucking fairness through adjustment of an electrode pattern and application of a fine hole, and provides a method of manufacturing an optical device with improved product quality and productivity by using the electrostatic chuck.

Description

Electrostatic chuck and use of electrostatic chuck}

The present invention relates to electrostatic chucks and uses of electrostatic chucks.

An optical device including an optical functional layer such as a liquid crystal layer between the upper substrate and the lower substrate can be manufactured through processes such as liquid crystal injection and One Drop Filling (ODF). As the substrate, for example, a glass substrate or a plastic film can be used. Specifically, in order to implement a flexible optical device, a plastic film may be used as the substrate, and the plastic film has a flexible characteristic unlike a glass substrate, and is difficult to fix on a stage in a flat state, causing a defect. have.

To improve this, an electrostatic chuck can be applied to fix the plastic film, but defects should not occur during chucking and dechuching. For example, if the electrostatic force is weak during chucking, the film is not fixed, and if the electrostatic discharge (discharge) does not occur quickly during dechucking, the film cell is damaged and productivity is greatly reduced.

Patent Document 1: Korean Patent Publication No. 2011-0020221

The present application provides an electrostatic chuck with improved chucking and dechucking processability through adjustment of an electrode pattern, application of a fine hole, and the like, and a method of manufacturing an optical device with improved product quality and productivity by using the electrostatic chuck.

This application relates to an electrostatic chuck. In the present application, an electrostatic chuck means an element having a function of fixing an object using electrostatic force. In one example, the object may be a substrate of an optical device, and the electrostatic chuck may function to fix the substrate during the manufacturing process of the optical device.

1 (a: side view, b: front view) exemplarily shows the structure of the electrostatic chuck of the present application. As shown in FIG. 1, the electrostatic chuck may include a stage 10, a pattern electrode layer 20 disposed on the stage 10, and a dielectric layer 30 disposed on the pattern electrode layer 20. . The pattern electrode layer may include a plurality of electrode domains 200 spaced apart from each other, and an area of one electrode domain may be 400 mm ^{2 or} more. The electrostatic chuck may further include a fine hole (40). The fine hole may penetrate the stage, the pattern electrode layer, and the dielectric layer, and the inside may be empty.

The electrostatic chuck of the present application can improve the chucking efficiency by enhancing the static power by adjusting the area of one electrode domain of the pattern electrode layer within the above range. In addition, since the electrostatic chuck of the present application applies the above-described fine hole, it is possible to push out a physically fixed object after electrostatic discharge (discharge) through hole blowing, thereby improving the dechucking efficiency.

The stage may serve as a description of the electrostatic chuck. The stage can include, for example, ceramic, polyimide or copper. The thicker the stage, the better the stage flatness and physical pressure during cementation. The thickness of the stage can be, for example, in the range of 10 mm to 100 mm.

When the power is applied to the pattern electrode layer, an electrostatic force may be generated on the top surface of the dielectric layer. The object to be fixed on the dielectric layer can be electrostatically adsorbed and fixed flat by the electrostatic force.

The pattern electrode layer may include a plurality of electrode domains spaced apart from each other. In the present application, the electrode domain may mean one electrode region physically separable from the pattern electrode layer. The plurality of electrode domains may be separated by, for example, an insulating region. The insulating region may be filled with a material of a dielectric layer on the pattern electrode layer. Therefore, the insulating region may be filled with polyimide or ceramic.

The area of one electrode domain may be 400 mm ^{2 or} more as described above. In the present application, by adjusting the area of one electrode domain of the pattern electrode layer within the above range, the chucking efficiency can be improved by enhancing the static power. The upper limit of the electrode domain may be, for example, 10,000 mm ² or less. If the area of the electrode domain is too large, the chucking force may be rather reduced, so the upper limit of the area of the electrode domain is preferably within the above range.

The total area of the plurality of electrode domains may be 80% to 90% of the total area of the stage. When the total area ratio of the plurality of electrode domains of the pattern electrode layer is within the above range, chucking efficiency may be further improved by enhancing the static power.

The distance between adjacent electrode domains in the pattern electrode layer may be, for example, within a range of 3 mm to 8 mm. When the gap is too wide, since an electrostatic chuck does not act on the electrode film left on the electrostatic chuck, the electrode film may float on the gap, so it may be advantageous to adjust the gap between the electrode domains within the above range.

The thickness of the pattern electrode layer may be appropriately selected in consideration of the purpose of the present application. The thickness of the pattern electrode layer may be, for example, 18 μm to 60 μm. If the thickness of the pattern electrode layer is too thin, the electrode layer may be vulnerable to damage, and if the thickness of the pattern electrode layer is too thick, it may be advantageous to adjust the thickness of the electrode layer within the above range because the voltage for generating electrostatic force may need to be increased.

The shape of the electrode domain of the pattern electrode layer may be selected to be similar to the shape of the optical device substrate. Each of the plurality of electrode domains may have a constant shape. In one example, each of the plurality of electrode domains may have a rectangular shape. At this time, the plurality of electrode domains may have a structure arranged regularly along the transverse and/or longitudinal direction of the stage.

The pattern electrode layer may include a conductive material suitable for generating electrostatic force. The pattern electrode layer may include, for example, one or more selected from the group consisting of copper, platinum, silver, palladium, tungsten, aluminum, tin, magnesium and nickel.

The pattern electrode layer is supplied with power from the outside to generate electrostatic force. The external power may be applied by, for example, a connector connecting the stage and the pattern electrode layer.

In the present application, the dielectric layer may refer to a layer containing a material that generates an electric polarization but does not generate a direct current when applying an electrostatic field. The dielectric layer may be fixed flat by electrostatic adsorption of an object placed on the top with electrostatic force generated from the pattern electrode layer.

The thickness of the dielectric layer may be appropriately selected in consideration of the purpose of the present application. In one example, the thickness of the dielectric layer may be thicker than the thickness of the pattern electrode layer. When the thickness of the dielectric layer is thinner than the thickness of the electrode layer, there is concern about exposure and damage of the electrode layer, and when the thickness is too thick, the film substrate may be damaged by a step difference from the electrode pattern layer. The thickness of the dielectric layer may be, for example, 100 μm to 500 μm.

The dielectric layer may include a material of a dielectric layer known in the art related to the electrostatic chuck. For example, the dielectric layer can include, for example, ceramic or polyimide.

The electrostatic chuck penetrates the stage, the pattern electrode layer, and the dielectric layer, and may include micro holes with an empty interior. In the present application, that the inside of the micro-hole is empty may mean that any material is not injected arbitrarily after the micro-hole is punched.

In one example, the micro-holes may continuously penetrate the stage, the pattern electrode layer, and the dielectric layer. Therefore, the electrostatic chuck may be opened by the stage, the pattern electrode layer, and the dielectric layer penetrating through a single fine hole.

The fine hole may have a column shape. The axis of the columnar height of the fine hole may be parallel to the thickness direction of the electrostatic chuck. Parallel in the present application includes manufacturing errors, and may include manufacturing errors within a range of ±10 degrees, ±5 degrees, and ±3 degrees. In one example, the height of the columnar shape of the micro hole may be the same as the overall thickness of the stage, the pattern electrode layer, and the dielectric layer.

The cross-sectional shape of the micro-holes can be appropriately adjusted within a range that does not impair the object of the present application. The cross-sectional phenomenon of the fine hole may have a shape such as circular, elliptical, polygonal, or irregular.

The size of the cross section of the micro hole may be appropriately adjusted within a range in which de-chucking processability can be secured. The size of the cross section of the micro hole may mean the diameter in the case of a circular shape, and may mean the average size of the cross section in the case of a non-circular shape.

In one example, the size of the cross section of the micro hole may be, for example, 1.5 mm or less. The size of the cross section of the micro hole may be, for example, 0.5 mm or more. If the size of the micro-holes is too large, the film substrate may be damaged. If the micro-holes are too small, the air pressure may be weak or may not be perforated, so the size of the micro-holes may be preferably adjusted within the above range.

The electrostatic chuck may include a plurality of fine holes. The plurality of fine holes may be present spaced apart from each other. The gap between the fine holes in the electrostatic chuck may be appropriately selected to be uniformly distributed over the entire area of the stage. The spacing of the fine holes in the pattern electrode layer may be, for example, in the range of 50 mm to 150 mm. Specifically, the spacing of the fine holes penetrating one electrode domain in the pattern electrode layer may be in the range of 50 nm to 150 nm.

The electrostatic chuck may further include a cushion pad. The cushion pad may be used to secure a precise flatness of the stage during film bonding. Even if the precision of the stage itself is high, there is a variation in the thickness of the electrode film itself, which is left on the electrostatic chuck, so that a cushion pad can be applied to overcome the pressure to apply the pressure as uniformly as possible. The cushion pad may be disposed on the dielectric layer, for example. The cushion pad may be attached to the dielectric layer via an adhesive, for example.

The thickness of the cushion pad can be appropriately adjusted within a range capable of performing the function. The thickness of the cushion pad can be, for example, in the range of 2 mm to 4 mm. The cushion pad may include, for example, ethylene vinyl acetate or a poron-based material.

The electrostatic chuck of the present application can be manufactured by the following method. For example, the method of manufacturing an electrostatic chuck of the present application includes a plurality of electrode domains spaced apart from each other on a stage, and forming a pattern electrode layer in which one area of the electrode domain is 400 mm ² or more; Forming a dielectric layer on the pattern electrode layer; And forming micro holes to continuously penetrate the stage, the pattern electrode layer, and the dielectric layer.

In the above, the pattern electrode layer may be formed by cutting the electrode layer and attaching it to the stage to have a desired pattern. The method of attaching the electrode layer to the stage may be performed, for example, by a thermal compression method in a range of about 100°C to 200°C.

In the above, the fine hole may be formed by drilling through a fine drill or laser, for example.

In the above, the dielectric layer can be formed by applying a dielectric material on the pattern electrode layer. The method of applying the dielectric material is not particularly limited and may be performed by a known coating method or vapor deposition method.

The contents described in the electrostatic chuck section can be equally applied unless otherwise specified in the above method.

The present application also relates to the use of the electrostatic chuck. The electrostatic chuck of the present application can be used to flatten a substrate for an optical device, for example during manufacture of the optical device. The substrate for the optical device may be, for example, an electrode film.

Accordingly, the present application relates to a substrate for an optical device including the electrostatic chuck and an electrode film fixed to the electrostatic chuck by an electrostatic force. The electrode film may be fixed on the dielectric layer of the electrostatic chuck by electrostatic adsorption.

The electrode film may include a plastic film and a conductive layer formed on the plastic film.

The plastic films include polyester films such as PC (polycarbonate) film, PEN (polyethylene naphthalate) film, PET (polyethyleneterephthalate) film, acrylic films such as PMMA (poly(methyl methacrylate)) film, and TAC (triacetyl cellulose). Cellulose polymer film, PE (polyethylene) film, PP (polypropylene) film, COP (cycloolefin polymer) film, olefin film, polybenzimidazole film, polybenzoxazole film, polybenzazole film, polybenzthiazole film or Polyimide film and the like may be exemplified, but is not limited thereto. The thickness of the film and the like can also be selected in consideration of the level of material applied to a general optical device.

As the conductive layer, for example, a conductive polymer, a conductive metal, a conductive nanowire, or a metal oxide such as ITO (Indium Tin Oxide) may be used to deposit the oxide. In addition, various materials and methods for forming transparent electrodes are known, and can be applied without limitation.

In addition, a functional layer such as a liquid crystal alignment layer may be further formed on the conductive layer. On the other hand, in the above, although an electrode film was exemplified as a substrate for an optical device, a substrate on which the conductive layer is formed on a glass substrate may also be used.

The present application also relates to a method for manufacturing an optical device using the electrostatic chuck. Since the electrostatic chuck can improve chucking and dechucking processability through adjustment of an electrode pattern and application of a fine hole, an optical device having improved product quality and productivity can be manufactured by using the electrostatic chuck.

The manufacturing method of the optical device of the present application is a chucking step of fixing a first electrode film by electrostatic force to a first electrostatic chuck, and fixing a second electrode film by electrostatic force to a second electrostatic chuck, the first electrode It may include a step of bonding the film and the second electrode film, and a dechuching (Dechucing) step of separating from the first electrostatic chuck from the first electrode film, and separating the second electrostatic chuck from the second electrode film. Each of the first electrostatic chuck and the second electrostatic chuck may be the aforementioned electrostatic chuck. Accordingly, the contents of the above-described electrostatic chuck may be equally applied unless there is particular reference to the first electrostatic chuck and the second electrostatic chuck.

The chucking step may be performed by applying power to the pattern electrode layer of the electrostatic chuck to generate electrostatic force between the electrostatic chuck and the electrode film. The electrode film may be electrostatically adsorbed and fixed to the dielectric layer of the electrostatic chuck by the electrostatic force.

The dechucking step may be performed by cutting off power to the pattern electrode layer of the electrostatic chuck. When the power is cut off, the charge concentrated between the electrode film and the electrostatic chuck is released and the electrostatic force is released (discharge). The electrode film can be separated from the electrostatic chuck by releasing the electrostatic force.

The dechucking step may be performed by performing air blowing through micro holes of the first electrostatic chuck and the second electrostatic chuck. Even if the power is turned off in the de-chucking step, the electrode film may not be easily detached from the electrostatic chuck due to residual static electricity. According to the present application, since the physically fixed object can be pushed out after electrostatic discharge through air injection through the micro-hole, de-chucking efficiency can also be improved.

The air injection may be performed after the power is turned off. Specifically, the air injection may be performed by introducing external air into the inside of the micro-hole through an air hose installed in the electrostatic chuck and allowing the introduced air to be discharged over the first electrostatic chuck and the second electrostatic chuck.

In the de-chucking step, after first bonding the first electrode film and the second electrode film, after cutting off the power to the pattern electrode layer, after performing air injection, the first electrode film and the second electrode film are respectively first. The electrostatic chuck and the second electrostatic chuck may be separated.

Between the chucking step and the dechucking step, a step (S-2a) of forming an optical functional layer between the first electrode film and the second electrode film may be performed. In addition, a step (S-2b) of bonding the first electrode film and the second electrode film may be performed between the chucking step and the de-chucking step.

The steps of forming the optical functional layer (S-2a) and bonding the first electrode film and the second electrode film (S-2b) may be reversed, respectively.

In one example, when the step (S-2a) is first performed and then the step (S-2b) is performed, a layer of optically functional material is applied in a region divided by a sealant line formed on the first electrode film, , For example, after forming the optical functional layer by ODF (One Drop Filling) method, the second electrode film may be bonded.

In another example, when the step (S-2a) is first performed and then the step (S-2a) is performed, after bonding the first electrode film and the second electrode film with a sealant to maintain a constant distance, , An optically functional layer can be formed by injecting an optically functional substance into a part of the sealant.

In one example, a sealant may be applied to any one of the first electrode film and the second electrode film. At this time, the electrostatic chuck to which the electrode film to which the sealant is not applied is fixed may include the aforementioned cushion pad. When the flatness of the electrostatic chuck is not precise when bonding the first electrode film and the second electrode film, the bonding may not be uniform. When the cushion pad is applied, it can be uniformly bonded when the film is bonded. However, the reason why the lower electrode film on which the sealant is formed does not include the cushion pad and the upper electrode film on which the sealant is not formed includes the cushion pad is because the cushion pad itself is not flat compared to the electrostatic chuck, so it is a step difference from the seal dispenser. This is because the sealant may not be uniformly applied due to the non-uniformity of.

After bonding the first electrode film and the second electrode film, a process of curing the sealant by a known sealant curing method, for example, applying heat and/or irradiating ultraviolet rays may be further included.

As the sealant, a sealant known in the art may be appropriately selected and used. For example, as the sealant, a known ultraviolet or thermosetting sealant, an epoxy-based sealant, a urethane-based sealant, or a phenol-based sealant may be applied.

The optically functional layer may include an optically functional material.

In one example, the optical functional layer may be a light modulation layer. In the present application, the light modulation layer may mean a layer including a light modulation material capable of transmitting or blocking light depending on whether external action is applied.

The light modulating layer may be, for example, a liquid crystal layer, an electrochromic material layer, an electrophoretic material layer, or a dispersion particle alignment layer.

In one example, the light modulation layer may be a liquid crystal layer including a liquid crystal compound. The liquid crystal compound may be present in the liquid crystal layer in a state in which alignment is switchable, for example. In the present application, "orientation is switchable" may mean that the alignment direction of the liquid crystal compound may be changed by external action. The external action may be, for example, the application of a voltage.

The liquid crystal compound may be a mesogen compound. In the present application, the term "mesogen compound" means a compound having a mesogen structure, and the term "mesogen" refers to a structure capable of inducing structural order in crystals, and the category of the mesogen It may include all kinds of rigid structures known to induce alignment of molecules in a predetermined direction in a liquid crystal compound.

The type of mesogen compound that can be used in the present application is not particularly limited. In one example, in the present application, as a known liquid crystal compound, for example, a nematic compound, a smectic compound, or a cholesteric compound may be used as the mesogen compound. In one example, the mesogen compound may be a non-reactive mesogen compound having no reactive group.

In one example, the liquid crystal layer may further include an anisotropic dye. The anisotropic dye may perform a function of adjusting blocking characteristics of the optical device.

The term "dye" in the present application may refer to a material capable of intensively absorbing and/or modifying light in at least a part or the entire range within a visible light region, for example, a wavelength range of 400 nm to 800 nm, The term "anisotropic dye" may mean a material capable of anisotropically absorbing light in at least a part or the entire range of the visible region.

As the anisotropic dye, for example, all kinds of dyes known to have properties as described above and having properties that can be aligned according to the alignment of the liquid crystal compound may be used.

As the anisotropic dye, for example, a known dye known to have properties that can be arranged according to the orientation of the liquid crystal compound can be selected and used. Examples of such anisotropic dyes include azo dyes, anthraquinone dyes, methine dyes, azomethine dyes, oxadine dyes, azo dyes, styryl dyes, coumarin dyes, porphyrin dyes, dibenzo It is possible to use one or more dyes selected from the group consisting of furanone-based dyes, ketetophyllophyl-based dyes, rhodamine-based dyes, chisanthene-based dyes, and pyromethene-based dyes.

The liquid crystal layer may further include optional additives such as a chiral agent, a polymer, and a conductivity control agent, depending on, for example, a driving mode.

In another example, the light modulation layer may be an electrochromic material layer. When the light modulation layer is an electrochromic material layer, the electrochromic material layer may include an electrochromic material. The term "electrochromic material" may refer to a material whose color changes by an oxidation-reduction reaction according to an external action, for example, application of a voltage. Specifically, when the optical functional layer is an electrochromic material layer containing an electrochromic material, the optical device induces light modulation using oxidation-reduction of the material (Electrochromic Display (ECD)) Can be

In another example, the light modulation layer may be an electrophoretic material layer. When the light modulation layer is an electrophoretic material layer, the electrophoretic material layer may include an electrophoretic material. The term "electrophoretic material" may refer to a material exhibiting an electrophoretic phenomenon indicating movement according to an external action, for example, application of a voltage. Specifically, when the light modulation layer is an electrophoretic material layer containing an electrophoretic material, the optical device uses an electrophoretic phenomenon of the material to induce light modulation (Electro Phoretic image Display; EPD ) Can be.

The electrochromic material and the electrophoretic material are known from Korean Patent Publication No. 2015-0055376, etc., and known electrochromic materials and electrophoretic materials are limited in this application. It can be adopted without, and included in the electrochromic material layer or the electrophoretic material layer.

In another example, the light modulation layer may be a dispersion particle alignment layer. The dispersion particle alignment layer may include electric dispersion particles. In the present application, the term "electrically dispersed particles" may implement an transmission mode by maintaining an orientation in a certain direction when an external action, for example, an electric field is applied, or in an arbitrary direction due to Brownian motion or the like when an electric field is not applied. It may mean particles that are oriented to implement a blocking mode. The specific type of the electric dispersed particles is also known, and in the present application, the known electric dispersed particles may be used without limitation.

In another example, the optical functional layer may be a light emitting layer including a light emitting material. In the present application, the term "light emitting layer" may mean a layer containing a light emitting material capable of emitting light by application of an external action. Specifically, when the optical functional layer is a light emitting layer, the optical device may be an electroluminescent display element, for example, an inorganic electroluminescent display element (Inorganic ELD). In addition, the light-emitting layer may include a light-emitting material, a specific type of the light-emitting material is, for example, a material that can be used in an inorganic electroluminescent display device, it is known by the Republic of Korea Patent Publication No. 2011-0020536, etc. And the like can be used without limitation in this application.

Further, the optical device manufactured by the above method can be applied to various uses such as a smart window or a display device. In the present application, a smart window is a window in which a smart window can control light transmittance, and is also called a smart blind, an electronic curtain, a variable transmittance glass, or a dimming glass.

The present application provides an electrostatic chuck with improved chucking and dechucking processability through adjustment of an electrode pattern, application of a fine hole, and the like, and a method of manufacturing an optical device with improved product quality and productivity by using the electrostatic chuck.

1 is a schematic diagram of an electrostatic chuck according to an embodiment of the present application.
2 is a schematic view of an electrostatic chuck of a comparative example.
3 is a schematic view of chucking force evaluation.
4 is a schematic front view of the ITO film fixed to the electrostatic chuck.
It is a schematic diagram of peeling evaluation of a protective film.
6 is a schematic diagram of evaluation of de-chucking processability.

Hereinafter, the present application will be described in detail through examples, but the scope of the present application is not limited by the following examples.

Example One. Electrostatic Produce

The structure of FIG. 1 was prepared with the electrostatic chuck of Example 1. Specifically, after forming an electrode layer (material: copper) 20 having a patterned thickness of 18 μm as shown in the structure of FIG. 1 on a stage (material: ceramic) 10 having a thickness of 20 mm, on the electrode layer A dielectric layer (material: polyimide) 30 having a thickness of 200 µm was formed. The total area of the stage is 120,000 mm ² , the area of one electrode domain 200 is 900 mm ² , and the spacing between domains is 5 mm. In the electrostatic chuck, fine holes were formed by using a fine drill to continuously penetrate the stage, the pattern electrode layer, and the dielectric layer. The spacing of the fine holes was 100 mm and the diameter was formed to be 1.0 mm.

Comparative example One. Electrostatic Produce

The structure of FIG. 2 was prepared with the electrostatic chuck of Comparative Example 1. Specifically, after forming an electrode layer (material: copper) 20 having a patterned thickness of 18 μm as shown in the structure of FIG. 2 on a stage (material: ceramic) 10 having a thickness of 20 mm, on the electrode layer A dielectric layer (material: polyimide) 30 having a thickness of 200 µm was formed. The total area of the stage is 120,000 mm ² , and no domain is formed in the pattern electrode layer, and thus one domain of the pattern electrode layer is provided. No fine holes were formed in the electrostatic chuck.

Comparative example 2

The electrostatic chuck was prepared in the same manner as in Example 1, except that the area of the entire stage and the electrode layer was the same as in Example 1, but the size per domain of the pattern electrode layer was changed to 11,000 mm ² .

Evaluation example One. Chucking power evaluation

The chucking force was evaluated according to the schematic diagram of FIG. 4.

Specifically, a film (hereinafter, ITO film) 50 on which an ITO layer was formed on a PET film was prepared. A protective film (E6 for polarizing plate, manufacturer: LG Chem) 60 is stacked on the ITO layer of the ITO film. The ITO film was fixed to the electrostatic chucks of Example 1, Comparative Example 1 and Comparative Example 2, respectively, and then power was applied to fix the ITO film by electrostatic force. Figure 3 shows a schematic front view of the ITO film is fixed to the electrostatic chuck of Comparative Example 1 (a) and Example 1 and Comparative Example 2 (b). Next, a measuring instrument (SHIMPO FGJN-20B) 70 was attached to the protective film, and peeling force was measured while pulling in a 180 degree direction (A direction) at a peel rate of 300 mm/min.

Evaluation example 2. Evaluation of peeling of protective film

The peeling evaluation of the protective film was performed according to the schematic diagram of FIG. 5.

Specifically, the peeling processability was evaluated by observing the surface to be peeled while peeling the protective film 60 from the ITO film fixed to the electrostatic chuck prepared in Evaluation Example 1 in the B direction using a clamp.

Evaluation example 3. Decherking ( Dechucking ) Fairness evaluation

The de-chucking processability was evaluated according to the schematic diagram of FIG. 6.

Specifically, a film (hereinafter referred to as ITO film) having an ITO layer formed on a PET film was prepared. The ITO films were fixed to the electrostatic chucks of Example 1, Comparative Example 1, and Comparative Example 2, respectively, and then a voltage was applied to fix the ITO films by electrostatic force. The ITO films 501 and 502 were fixed to the electrostatic chucks 101, 201, 301, 102, 202, and 302 in the same manner as described above, respectively, to prepare a first substrate and a second substrate. A sealant is formed by drawing a sealant on the ITO film 501 of the first substrate, and an optical functional layer 70 is formed by applying a liquid crystal in the inner region of the seal line 60. Next, the ITO film 502 of the second substrate was bonded to the ITO film 501 of the first substrate to manufacture an optical device. In the first and second substrates, damage to the optical device and de-chucking processability were evaluated while de-chucking the voltage on the electrostatic chuck (Off) and then de-chucking the electrostatic chuck by hand. In the case of Example 1 and Comparative Example 2, the voltage was cut and de-chucking was performed by air injection through the fine hole, and in Comparative Example 1, de-chucking was performed without air injection.

The results of the evaluation examples 1 to 3 are summarized in Table 1 below.

As a result of evaluation of the chucking force, Example 1 and Comparative Example 2 exhibited higher 180-degree peel force than Comparative Example 1, and showed excellent chucking force. In addition, it can be seen that Example 1 has better 180-degree peel force than Comparative Example 2.

As a result of peeling evaluation of the protective film, as shown in Fig. 5(A), Example 1 was good peeling of the protective film 60 from the electrode film 50, Comparative Example 1 and Comparative Example 2 of the electrostatic chuck It can be confirmed that the electrode film 50 was peeled from the dielectric layer 30 so that the protective film was not peeled.

As a result of evaluating the de-chucking process, Example 1 shows good separation between the electrode films 501 and 502 and the electrostatic chucks 301 and 302, as shown in FIG. 6(A), whereas Comparative Example 1 shows FIG. 6(B). As shown in ), as the second electrode film 502 is peeled from the first electrode film 501, separation between the electrode films is achieved, and thus it can be confirmed that the de-chucking processability deteriorates. In addition, it can be confirmed that the separation between the electrode films is also made in Comparative Example 2 similarly to Comparative Example 1.

Comparative Example 1 Comparative Example 2 Example 1 Chucking force (180 degree peel force) 1.1 kgf 2.1 kgf 3.5 kgf Protective film peeling evaluation Poor (unprotected film) Poor (unprotected film) Good (protective film peeling) Decherking Fairness Poor (separation between ITO films) Poor (separation between ITO films) Good (separate ITO film from electrostatic chuck)

10, 101, 102: stage, 20, 201, 202: pattern electrode layer, 200: electrode domain 30, 301, 302: dielectric layer, 40: micro holes, 50, 501, 502: electrode film, 60: protective film 70: measuring instrument A: Pulling direction of protective film B: Peeling direction

Claims (17)

A stage, a pattern electrode layer disposed on the stage, and a dielectric layer disposed on the pattern electrode layer, the pattern electrode layer includes a plurality of electrode domains spaced apart from each other, and the area of one electrode domain is 400 mm ² It is within the range of 10,000 to ² mm, passing through the stage, the pattern electrode layer and the dielectric layer, the electrostatic chuck including a fine hole in the interior. The electrostatic chuck of claim 1, wherein the stage comprises ceramic, polyimide or copper. The electrostatic chuck of claim 1, wherein the plurality of electrode domains are separated by an insulating region. The electrostatic chuck of claim 1, wherein the plurality of electrode domains each have a constant shape and have a structure arranged regularly along a lateral or longitudinal direction of the stage. The electrostatic chuck of claim 1, wherein the pattern electrode layer comprises one or more selected from the group consisting of copper, platinum, silver, palladium, tungsten, aluminum, tin, magnesium and nickel. The electrostatic chuck of claim 1, wherein the dielectric layer comprises ceramic or polyimide. The electrostatic chuck of claim 1, wherein the micro-hole continuously penetrates the stage, the pattern electrode layer, and the dielectric layer. The electrostatic chuck of claim 1, wherein a size of the cross section of the micro hole is within a range of 0.5 mm to 1.5 mm. The electrostatic chuck of claim 1, wherein the electrostatic chuck includes a plurality of micro holes and the micro holes are spaced apart from each other. The electrostatic chuck of claim 1, wherein a gap between the micro holes penetrating one electrode domain is within a range of 50 mm to 150 mm. The electrostatic chuck of claim 1, wherein the electrostatic chuck further comprises a cushion pad on the dielectric layer. The electrostatic chuck of claim 11, wherein the thickness of the cushion pad is within a range of 2 mm to 4 mm. 12. The electrostatic chuck of claim 11, wherein the cushion pad comprises ethylene vinyl acetate or a poron-based material. A substrate for an optical device comprising the electrostatic chuck of claim 1 and an electrode film fixed to the electrostatic chuck by an electrostatic force. Chuncking step of fixing the first electrode film by the electrostatic force to the first electrostatic chuck, and fixing the second electrode film by the electrostatic force to the second electrostatic chuck,
Bonding the first electrode film and the second electrode film, and
And a dechucking step of separating the first electrostatic chuck from the first electrode film and separating the second electrostatic chuck from the second electrode film.
The first electrostatic chuck and the second electrostatic chuck are the electrostatic chucks of claim 1, respectively. 16. The method of claim 15, wherein the dechucking step is performed by performing air blowing through fine holes of the first electrostatic chuck and the second electrostatic chuck. The method of claim 16, wherein the air injection is through the air hoses installed in the first electrostatic chuck and the second electrostatic chuck to introduce external air into the inside of the micro-hole, and the introduced air is discharged over the first electrostatic chuck and the second electrostatic chuck A method of manufacturing an optical device that is performed by making it possible.

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