KR102520604B1 - Digital x-ray detector substrate and method of fabricating thereof - Google Patents

Abstract

The present invention relates to a substrate for a digital X-ray detector and a method for manufacturing the same. A substrate for a digital X-ray detector according to an embodiment of the present invention includes an encapsulated substrate having a predetermined depth by etching the inside and a pattern on the encapsulated substrate. and a scintillator disposed on the reflective layer.

Description

Substrate for digital X-ray detector and method for manufacturing the same

The present invention relates to a digital x-ray detector and a method for manufacturing the same.

A diagnostic X-ray examination method, which is currently widely used for medical purposes, is taken using an X-ray detection film, and a predetermined film printing time must be passed in order to know the result. However, in recent years, thanks to the development of semiconductor technology, an X-ray detector (Digital X-ray detector, DXD) using a thin film transistor has been researched/developed. The X-ray detector (DXD) uses a thin film transistor as a switching element, and has an advantage of diagnosing the result in real time immediately after taking an X-ray.

In general, an X-ray detector is composed of amorphous Se (Selenium) stacked on the upper layer of a thin film transistor array substrate and a transparent electrode formed on the amorphous Se. A direct method (Direct type DXD) that goes through a signal processing process and an indirect method (Indirect type that goes through a series of signal processing processes) in which X-rays are converted into visible light by a scintillator and visible light is converted into an electrical signal by a pin diode DXD).

Meanwhile, in order to form a scintillator to detect X-rays, a process of growing the scintillator is required. In particular, there is a need for a method for manufacturing a scintillator capable of accurately classifying incident light per pixel and having no deviation, and a digital X-ray detector including the same.

The present invention proposes a substrate for a digital X-ray detector that prevents penetration of moisture and a method for manufacturing the same.

The present invention provides a substrate for a digital X-ray detector on which a scintillator is arranged to have high light emission efficiency and a method for manufacturing the same.

The present invention provides a substrate for a digital X-ray detector in which light efficiency is increased by disposing a reflective layer on which patterns are disposed, and a method for manufacturing the same.

The objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention not mentioned above can be understood by the following description and will be more clearly understood by the examples of the present invention. It will also be readily apparent that the objects and advantages of the present invention may be realized by means of the instrumentalities and combinations indicated in the claims.

A substrate for a digital X-ray detector according to an embodiment of the present invention includes an encapsulation substrate having a certain depth by being etched inside, a reflection layer including a pattern disposed on the encapsulation substrate, and a scintillator disposed on the reflection layer.

A substrate for a digital X-ray detector according to an embodiment of the present invention includes an array substrate bonded to an encap substrate at a corner of the encap substrate.

A method of manufacturing a substrate for a digital X-ray detector according to an embodiment of the present invention includes disposing a reflective layer on which a pattern is disposed on an encap substrate having a predetermined depth after being etched therein, and disposing a scintillator on the reflective layer. include

A method of manufacturing a substrate for a digital X-ray detector according to an embodiment of the present invention includes disposing an adhesive layer on one of a scintillator or an array substrate facing the scintillator, and bonding the array substrate and the encapsulation substrate. .

When the present invention is applied, the effect of preventing moisture permeation may be increased by the etched glass substrate.

When the present invention is applied, since frit bonding is disposed between the two substrates, it is possible to protect the scintillator, which is vulnerable to moisture.

When the present invention is applied, the scintillator is deposited and grown on the reflective layer, and since the tip of the scintillator is disposed toward the array substrate, light emitted from the tip of the scintillator is incident on the array substrate to increase light efficiency. there is

The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art can easily derive various effects of the present invention from the configuration of the present invention.

1 is a diagram showing the configuration of an X-ray detector.
2 is a diagram showing the configuration of an X-ray detector according to an embodiment of the present invention.
3 is a diagram showing a configuration of a pattern on an encapsulated substrate according to an embodiment of the present invention.
4 is a view showing a cross section of a reflective layer according to an embodiment of the present invention.
5 is a view showing a cross section of a reflective layer according to an embodiment of the present invention.
6 is a view showing a cross-section in which a scintillator according to an embodiment of the present invention is disposed.
7 is an enlarged view of the tip of the scintillator 180 according to an embodiment of the present invention.
8 is an enlarged view showing the configuration of the lower end of the scintillator according to an embodiment of the present invention.
9 and 10 are diagrams showing configurations in which a pattern of a reflective layer corresponds to a pixel area according to an embodiment of the present invention.
11 is a diagram showing a configuration in which a pattern of a reflective layer corresponds to a pixel area according to another embodiment of the present invention.
12 is a diagram showing a process of manufacturing a substrate for a digital X-ray detector according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings so that those skilled in the art can easily carry out the present invention. This invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

In order to clearly describe the present invention, parts irrelevant to the description are omitted, and the same reference numerals are assigned to the same or similar components throughout the specification. In addition, some embodiments of the present invention are described in detail with reference to exemplary drawings. In adding reference numerals to components of each drawing, the same components may have the same numerals as much as possible even if they are displayed on different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description may be omitted.

Hereinafter, the provision or arrangement of an arbitrary element on the “upper (or lower)” or “upper (or lower)” side of a substrate means that an arbitrary element is provided or disposed in contact with the upper (or lower) surface of the substrate. It is meant, but not limited to, not including other features between the substrate and any features provided or disposed on (or under) the substrate. Also, terms such as first, second, A, B, (a), and (b) may be used in describing the components of the present invention. These terms are only used to distinguish the component from other components, and the nature, sequence, order, or number of the corresponding component is not limited by the term. When an element is described as being “connected,” “coupled to,” or “connected” to another element, that element is or may be directly connected to that other element, but intervenes between each element. It will be understood that may be "interposed", or each component may be "connected", "coupled" or "connected" through other components.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings so that those skilled in the art can easily carry out the present invention. This invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

1 is a diagram showing the configuration of an X-ray detector.

Looking at the configuration of the X-ray detector 1, the light conversion unit 15 is disposed on the substrate 10. Blocking the pacification layer 15d disposed on the substrate, the scintillator 15c disposed on the pacification layer, and the scintillator 15c from external air as a configuration of the light conversion unit 15 For the protective layer (15b, 15a) is disposed. The scintillator 15c may be deposited or grown on the planarization film 15d to be disposed. In one embodiment, 15b may include an adhesive layer such as Parylene, and 15a may use a PET film.

Meanwhile, the substrate 10 may be divided into two layers. It may be divided into a layer 12 on which a transistor is disposed and a layer 11 on which a light sensing unit PD such as a pin diode is disposed. In the configuration of FIG. 1 , the transistor may be composed of an oxide TFT. Of course, the photo-sensing unit and the transistor may be disposed on the same layer. This may vary depending on the embodiment.

In the configuration shown in FIG. 1 , light emission efficiency may decrease in that the growth direction of the scintillator 15c is toward the direction where X-rays are incident. That is, in FIG. 1, X-rays are incident from the top of the scintillator 15c and are incident downward toward the layer 11 where the photodetector is disposed (refer to the arrow in FIG. 1). By the way, the direction in which the scintillator 15c grows in FIG. 1 is the direction toward the upper side where X-rays are incident, that is, the upward direction (opposite direction of the arrow in FIG. 1). Due to this, X-rays are introduced into the top of the scintillator 15c, converted into visible light by the scintillator 15c, and then emitted to the layer 11 where the light sensing unit is disposed. However, as described above, comparing the upper surface of the scintillator 15c through which X-rays are incident and the lower surface of the scintillator 15c through which visible light is emitted, the upper surface has a sharp tip. This is because the scintillator 15c converges to a point as the scintillator 15c grows, and as a result, the concentration of light at the tip increases and increases. If the upper surface, that is, the lower surface where visible light emits has a sharp tip rather than the surface where X-rays are incident, the concentration of light increases and the light emission efficiency increases. Let's take a look at the embodiments.

Accordingly, in the present specification, a digital X-ray detector based on a structure for growing the scintillator 15c in reverse is intended to be implemented.

2 is a diagram showing the configuration of an X-ray detector according to an embodiment of the present invention.

An array substrate 100 on which transistors and pin diodes are disposed and an etched encap substrate 160 are coupled. The array substrate 100 and the etched encap substrate 160 are coupled by a sealing portion 195 . The sealing part 195 is disposed on an edge portion of the encapsulation substrate 160 .

A patterned reflective layer 170 is disposed on the etched encap substrate 160 . The reflective layer is patterned in a certain unit, such as a pixel unit, a unit smaller than a pixel, or a unit including one or more pixels. A scintillator 180 is disposed on the patterned reflective layer 170 . The scintillator 180 may grow on the patterned reflective layer 170 of the encap substrate 160 . For example, the scintillator 180 grows in the direction indicated by 181 . As a result, the tip of the grown scintillator 180 may grow into a crystal having a pointed shape. This will be described later.

An adhesive layer 190 may be disposed between the scintillator 180 and the substrate 100 . In addition, the sealing unit 195 may employ frit bonding using a frit seal.

A substrate for a digital X-ray detector in FIG. 2 is as follows. The light conversion unit 150 includes an encapsulation substrate 160 having a certain depth by being etched inside, a reflection layer 170 disposed on the encapsulation substrate 160 including a pattern, and a scintillator disposed on the reflection layer 170 ( 180).

In addition, the array substrate 100 is bonded to face the encap substrate 160, and the array substrate 100 may adhere to the encap substrate 160 at a corner, that is, an edge region of the encap substrate 160. At this time, a sealing unit 195 using frit bonding is disposed.

Also, the size of the pattern of the reflective layer 170 is proportional to the size of the pixel area of the array substrate 100 . For example, the size of one pattern formed on the reflective layer 170 may be the same as the size of a pixel area of the array substrate 100 or may have a difference within an error range. In one embodiment of the present invention, patterns formed on the reflective layer 170 may respectively correspond to pixel regions of the array substrate 100 . In another embodiment of the present invention, patterns formed on the reflective layer 170 may respectively correspond to N pixel areas of the array substrate 100 . N can be a number greater than or equal to 1.

The structure of FIG. 2 is summarized as follows. The scintillator 180 is disposed on the etched substrate 160 to prevent the scintillator 180 from permeating through. For example, etched glass may be used as the substrate 160, and the scintillator 180 may be grown on the etched region.

In addition, when the etched substrate 160 is a glass substrate, as an embodiment for bonding the array substrate 100 and the glass substrate 160, frit bonding is performed using a material corresponding to glass powder. The sealing part 195 can be implemented as.

In the configuration shown in FIG. 2 , since the etched glass substrate 160 serves to prevent moisture permeation, a separate coating process using an epoxy resin series to prevent moisture permeation is unnecessary. In addition, on the etched substrate 160, a methyl thin film used as a reflective layer is deposited and patterned to form a patterned reflective layer 170 to improve light efficiency. And, since the scintillator 180 is deposited on the reflective layer 170, the scintillator 180 can be formed along the curve of the pattern.

In particular, the size of the pattern may be arranged to correspond to the pixel area so as to correspond to the photodiode of the substrate 100 . Alternatively, light efficiency may be increased by forming a pattern in a lower unit of a pixel area or an upper unit including two or more pixel areas.

After the scintillator 180 is deposited, the encapsulated glass substrate 160 on which the scintillator 180 is deposited may be bonded to the array substrate 100 . A general adhesive material may be used as an example of the adhesive layer 190 in the process of bonding the two substrates 100 and 160 . Alternatively, an adhesive organic scintillator may be used as another embodiment of the adhesive layer 190 . The adhesive layer 190 also serves to fill the gap between the scintillator 180 and the array substrate 100 .

In the configuration shown in FIG. 2, a glass encapsulation substrate 160 protects the scintillator 180, which is vulnerable to moisture, and replaces the existing resin-based protective layer (for example, 15a or 15b in FIG. 1) to prevent moisture permeation. It can be positioned to prevent moisture permeation. In addition, it is effective in preventing mechanical shock and moisture permeation by forming by a frit bonding method like 195 using a glass power material having the same composition as the array panel 100 disposed below.

In addition, by patterning the metal used as the reflective layer, light scattered to the top of the scintillator 180 is regularly reflected, thereby increasing light efficiency. Let's take a closer look at the detailed configuration.

3 is a diagram showing a configuration of a pattern on an encapsulated substrate according to an embodiment of the present invention. A reflective layer 170 is disposed on the encapsulated substrate using a predetermined reflective material, and the reflective layer 170 may be configured in a pattern having two types of heights.

The pattern of the reflective layer 170 is composed of a low height pattern 170b and a high height pattern 170p. The low-height pattern 170b has horizontal and vertical sizes of P_x and P_y, respectively, as an example. Here, P_x or P_y may be the same as the width and length of one pixel area disposed on the array substrate.

Accordingly, one pixel area may correspond to the array substrate corresponding to the low-height pattern 170b. Alternatively, N pixel areas may correspond to the array substrate corresponding to the low-height pattern 170b (N > 1). Alternatively, one pixel area may correspond to the array substrate to correspond to the M patterns 170b of low height (M > 1).

4 is a view showing a cross section of a reflective layer according to an embodiment of the present invention. A-A' cross section of FIG. 3 is shown. In FIG. 4 , 170p is a high-height pattern, and 170b is a low-height pattern. The height difference between the two patterns is P_height. An etched encap substrate 160 is disposed below the reflective layer.

That is, the reflective layer is composed of a pattern 170b having a first height and a pattern 170p having a second height, where the first height is smaller than the second height. Also, the patterns of the first height may correspond 1:1 or 1:N to the pixel area of the array substrate. 9 and 10 to be described later show an embodiment in which one pattern 170b having a first height corresponds to one pixel area. 11 shows an example in which one pattern 170b having a first height corresponds to four pixel areas.

5 is a view showing a cross section of a reflective layer according to an embodiment of the present invention. It shows the BB' cross section of FIG. In FIG. 5 , 170p is a high-height pattern, and 170b is a low-height pattern. It can be seen that the wall 160w of the encap substrate is disposed at the end.

A sealing portion 195 including a glass frit may be disposed at an end portion of the wall 160w of the encapsulation substrate, that is, at a corner 160e of the encapsulation substrate. That is, as reviewed in FIG. 2 , a sealing portion 195 including a sintered glass frit is disposed between the edge of the encap substrate 160 and the array substrate 100 . Thereafter, the array substrate 100 and the encap substrate 160 may be bonded by melting and then sintering the sealing portion including the glass frit.

When frit bonding is applied, glass is used to protect the scintillator 180, which is vulnerable to moisture, and instead of the existing resin-based protective layer (for example, 15a or 15b in FIG. ) to prevent moisture permeation. In addition, the two substrates 100 and 160 are made of glass as one embodiment, and when frit bonding is performed using the same glass powder material, the effect of resisting mechanical shock and preventing moisture permeation can be enhanced.

6 is a view showing a cross-section in which a scintillator according to an embodiment of the present invention is disposed. 4 is a cross section in which the scintillator 180 is grown. The growth direction is 310, and the direction in which light is introduced is also 310. Therefore, since the light passing through the scintillator converges at the end of the scintillator 180 where the growth crystals are sharply arranged, light efficiency can be increased. Zoom in on part 301 and examine it.

7 is an enlarged view of the tip of the scintillator 180 according to an embodiment of the present invention. Section 301 of 6 is enlarged. Since the tip of the scintillator 180 is crystallized to be sharp, the possibility of convergence of light is high, so that more light can reach the photodiodes arranged for each pixel area of the array substrate 100. That is, more light can be introduced toward the array substrate 100 . This is an effect generated as a result of growing the scintillator on the encapsulation substrate 160 .

That is, as shown in FIG. 7, the scintillator 180 is deposited and grown on the reflective layer 170, and since the tip of the scintillator is disposed toward the array substrate, the light emitted from the tip of the scintillator Light efficiency can be increased by being incident on the array substrate. In particular, the tip of the crystallized scintillator induces light incident on the scintillator to be incident on the array substrate without going out in the direction in which it was incident again.

8 is an enlarged view showing the configuration of the lower end of the scintillator according to an embodiment of the present invention. Portion 302 of FIG. 6 is enlarged.

Since the reflective layer 170 is arranged to have a height difference, the corner of the scintillator at the point 302 where the pattern 170p of high height and the pattern 170b of low height meet is rounded depending on the pattern, or the scintillator has a gap between the scintillators. Differences in height may occur. This induces light entering the scintillator to flow into the pixel area. Therefore, when the pattern 170b with a low height and the pattern 170p with a high height are disposed corresponding to the pixel area, they do not flow into the photodiode at the boundary points 302a and 302b of the pixel areas, but move to the boundary point between the pixel areas. Light to escape or to be emitted to the outside of the substrate may be guided toward the photodiode (toward the pixel area). This can increase light efficiency.

9 and 10 are diagrams showing configurations in which a pattern of a reflective layer corresponds to a pixel area according to an embodiment of the present invention. The area of the low-height pattern 170b in FIG. 9 corresponds to the pixel area where the photodiode PD and transistor TR are disposed on the array substrate. A configuration in which one pixel area corresponds to the low-height pattern 170b is shown.

10 is a pattern 170b of a low height of the reflective layer when the data line DL, the bias line BL, and the gate line GL of the array substrate are disposed and the photodiode PD and the thin film transistor TR are disposed. It is shown that the area of corresponds to one pixel area. The horizontal length P_x of the low-height pattern 170b may match the largest horizontal length of the photodiode or may have a difference within a certain error range. In addition, the vertical length P_y of the low-height pattern 170b may coincide with the largest vertical length of the photodiode or may have a difference within a certain error range.

Here, the difference in the error range may be smaller than the widths of the various lines DL, BL, and GL disposed on the array substrate. Alternatively, the difference in the error range may be smaller than the distance between the various lines DL, BL, and GL disposed on the array substrate and the photodiode.

In addition, the high-height pattern 170p may be disposed to correspond to the data line DL or the gate line GL.

In summary, the reflective layer includes a pattern 170b of a low height (first height) and a pattern 170p of a high height (second height), and a pattern of a second height is disposed around the pattern of the first height. The first height may be smaller than the second height, and the pattern of the first height may have the same size as that of the pixel area.

The same size means the same within a certain error range. For example, the horizontal distance (P_x) between patterns of the second height, that is, the horizontal length of the pattern of the first height is equal to the horizontal length of the photodiode of the corresponding pixel area. Correspondingly, or may correspond to distances between data lines arranged around the pixel area.

As an embodiment, when pd_x is the largest horizontal length of the photodiode of the corresponding pixel area, and dl_x is the distance between DL(n) and DL(n+1) disposed on the left and right of the corresponding pixel area, P_x may satisfy Equation 1 below.

[Equation 1]

pd_x ≤ P_x ≤ dl_x

Similarly, the same can be applied to the vertical length.

For example, the vertical distance P_y between the patterns of the second height, that is, the vertical length of the pattern of the first height corresponds to the vertical length of the photodiode in the corresponding pixel area, or the gate disposed around the pixel area. It can correspond to the distance between the lines.

As an embodiment, when pd_y is the largest vertical length of the photodiode of the corresponding pixel area, and gl_y is the distance between GL(m) and GL(m−1) disposed above and below the corresponding pixel area, P_y may satisfy Equation 2 below.

[Equation 2]

pd_y ≤ P_y ≤ gl_y

As shown in FIGS. 9 and 10 , when the pattern 170b with a low height corresponds 1:1 to the pixel area, or when the pattern 170p with a high height is disposed at a portion corresponding to a data line or gate line boundary, X It is possible to increase the light efficiency by improving the upper light path by preventing the diffuse reflection of the scintillator 180 that is converted from -ray to visible light. In addition, the light efficiency increase effect increases the reliability of DXD products and improves performance.

9 and 10 have looked at an embodiment in which one low-height pattern 170b corresponds to one pixel area. In addition, one low-height pattern 170b may be arranged to correspond to two or more pixel areas.

11 is a diagram showing a configuration in which a pattern of a reflective layer corresponds to a pixel area according to another embodiment of the present invention. Areas of the low-height pattern 170b in FIG. 11 correspond to four pixel areas in which photodiodes PD and transistors TR are disposed on the array substrate. A configuration in which four pixel regions correspond to the low-height pattern 170b is shown. That is, the horizontal length P_x of the low-height pattern 170b corresponds to the width of two pixel areas, and the vertical length P_y corresponds to the height of the two pixel areas.

In summary, the reflective layer includes a pattern 170b of a low height (first height) and a pattern 170p of a high height (second height), and a pattern of a second height is disposed around the pattern of the first height. The first height may be smaller than the second height, and the pattern of the first height may have the same size as that of two or more pixel areas.

The same size means the same within a certain error range. For example, in FIG. 11 , the horizontal distance (P_x) between the patterns of the second height, that is, the horizontal length of the pattern of the first height, corresponds to the photodiode of the corresponding pixel area. It may correspond to the sum of twice the horizontal length and the width of the middle data line, or may correspond to a distance between even (or odd) data lines among data lines disposed around the pixel area.

In one embodiment, the largest horizontal length of the photodiode of the corresponding pixel area is pd_x, the distance between DL(n) and DL(n+1) disposed on the left and right of the corresponding pixel area is dl_x, and the data line When the width of is denoted by d_width, P_x may satisfy Equation 3 below.

[Equation 3]

(pd_x*2 + d_width) ≤ P_x ≤ (dl_x*2 + d_width)

Here, (pd_x*2 + d_width) means the sum of the horizontal lengths of two photodiodes and the width of one data line. And (dl_x*2 + d_width) means a distance between DL(n-2) to DL(n) or a distance between DL(n-1) to DL(n+1).

Similarly, the same can be applied to the vertical length.

For example, the vertical distance P_y between the patterns of the second height, that is, the sum of twice the vertical length of the photodiode of the pixel area corresponding to the vertical length of the pattern of the first height and the width of the gate line in the middle. , or may correspond to a distance between even-numbered (or odd-numbered) gate lines among gate lines disposed around the pixel area.

In one embodiment, the largest vertical length of the photodiode of the corresponding pixel area is pd_y, the distance between GL(m) and GL(m-1) disposed above and below the corresponding pixel area is gl_y, and the gate line When the width of is denoted by g_width and denoted by , P_y can satisfy Equation 2 below.

[Equation 4]

(pd_y*2 + g_width) ≤ P_y ≤ (gl_y*2 + g_width)

Here, (pd_y*2 + g_width) means the sum of the vertical lengths of two photodiodes and the width of one gate line. And (gl_y*2 + g_width) means the distance between GL(m-2)~GL(m) or the distance between GL(m-1)~GL(m+1).

As shown in FIG. 11, when the pattern 170b with a low height corresponds to a plurality of pixel areas, or when the pattern 170p with a high height is disposed in a portion corresponding to a boundary of some data lines or some gate lines, X-ray Light efficiency may be increased by improving an upper light path by preventing diffuse reflection of the scintillator 180 that is converted into visible light. In addition, the light efficiency increase effect increases the reliability of DXD products and improves performance. In summary, as shown in FIGS. 9 to 11 , the low-height pattern 170b may be disposed to correspond to one or more pixel areas.

12 is a diagram showing a process of manufacturing a substrate for a digital X-ray detector according to an embodiment of the present invention.

First, an encapsulation substrate having a predetermined depth by being etched inside is prepared, and a reflective layer 170 having a pattern disposed thereon is disposed on the encapsulation substrate 160 (S410). As described above, the size of the pattern of the reflective layer 170 is proportional to the size of the pixel area of the array substrate 100 . Then, the scintillator 180 is disposed on the reflective layer 170 (S420). Thereafter, for bonding with the array substrate 100, an adhesive layer 190 is disposed on the scintillator 180 or an adhesive layer 190 is disposed on the array substrate 100 facing the scintillator 180 (S430). . Then, the array substrate 100 and the encap substrate 160 are bonded (S440). Here, the adhesive layer 190 may include a general adhesive material. Alternatively, an adhesive organic scintillator may be used as another embodiment of the adhesive layer 190 . The adhesive layer 190 also serves to fill the gap between the scintillator 180 and the array substrate 100 .

The substrate for the digital X-ray detector manufactured in the process shown in FIG. 12 uses etched glass as an encaps substrate instead of the existing resin-based moisture barrier layer to prevent moisture penetration of the scintillator 180, which is vulnerable to moisture. Compared to the conventional epoxy resin-based deposition film for preventing moisture permeation shown in FIG. 1, the substrate for a digital X-ray detector manufactured by encapsulation with etched glass by the manufacturing method as shown in FIG. can be maintained more robustly.

Looking at the process of FIG. 12 in detail, a predetermined pattern may be disposed on the reflective layer 170 . As described above in FIG. 10 , patterns having two heights may be disposed. In the process of arranging the reflective layer 170 , a pattern 170b having a low height (first height) and a pattern 170p having a high height (second height) may be disposed. Here, a pattern of a second height is arranged around a pattern of a first height, which is a low height. The reflective layer 170 may be disposed such that the first height is smaller than the second height and the pattern of the first height has the same size as the pixel area.

On the other hand, as shown in FIG. 11 in the generation of the reflective layer 170, the reflective layer includes a pattern 170b of a low height (first height) and a pattern 170p of a high height (second height), and the first height A pattern of a second height is disposed around the pattern of . The reflective layer 170 may be disposed such that the first height is smaller than the second height, and the pattern of the first height may have the same size as that of two or more pixel areas.

In FIG. 2 , the reflective layer 170 is disposed on the entire encap substrate 170 , but in another embodiment, only the pattern 170p having a high height (second height) may be disposed among the reflective layer 170 .

In the arrangement of the scintillator in S420, a process of depositing and growing a scintillator material on the reflective layer 170 is included. As a result, the growth direction of the scintillator is directed toward the array substrate 100, and light efficiency is increased so that more light is incident on the array substrate 100.

In the step of arranging the adhesive layer 190 in S430, in an embodiment, the adhesive layer 190 including a material including an adhesive organic scintillator is disposed. Alternatively, as another embodiment, the adhesive layer 190 including a general adhesive material is disposed.

In addition to the arrangement of the adhesive layer 190, a glass frit may be additionally disposed in the bonding step of S440. As an embodiment, as shown in FIG. 5 , when the encap substrate 160 is glass (ie, glass), a glass frit is disposed between the edge of the encap substrate 160 and the array substrate 100. In addition, the array substrate 100 and the encap substrate 160 may be bonded by melting and then sintering the glass frit.

In addition, in an embodiment of the present invention, a reflective layer may be disposed on an encapsulation substrate made of encapsulation glass as an embodiment in order to improve light efficiency of the scintillator. In addition, the reflective layer may suppress scattering of light scattered upward by depositing and patterning a reflective metal layer. In the process of bonding the substrate 160 on which the scintillator 180 is deposited and the substrate 100 on which the array is disposed, frit bonding may be applied. An embodiment of this is to bond these substrates by using a Si-based glass powder material between the substrates in order to enhance the role of preventing moisture permeation. In one embodiment, when the encapsulation substrate 160 is glass and the array substrate 100 is glass, sealing is performed using a frit bonding method having a glass component. The adhesive layer 190 disposed in the process of bonding the two substrates 160 and 100 may be laminated using a general adhesive or an adhesive organic scintillator. In the process of manufacturing DXD in this way, it is effective to protect the scintillator 180, which is vulnerable to moisture, and to increase the light efficiency by regularly reflecting the diffusely reflected light scattered by the reflective layer 170 into the scintillator 180. there is.

Looking at the characteristics of the DXD substrate generated in the same process as in FIG. 12 are as follows. The etched encap substrate 160 provides effects of preventing moisture permeation and protecting against physical impact. In addition, the patterned reflective layer 170 improves light efficiency by regularly reflecting light scattering (diffuse reflection) toward the top of the scintillator 180 toward the bottom (direction 181 in FIG. 2 ). In addition, the sealing part, for example, the glass frit seal, is made of a material using glass powder (glass power) of the same series as the encap substrate glass and the array substrate glass, and frit bonding is possible, so moisture permeation is possible. to prevent

In addition, in the case of the adhesive layer 190, an adhesive organic scintillator may be used as a material for the adhesive layer to prevent air gaps and reduce light loss transmitted to the light receiving element when the upper and lower portions are bonded.

Compared to an epoxy-based resin conventionally used as a moisture barrier protective layer, the encapsulation substrate and the sealing portion according to the embodiment of the present invention provide enhanced moisture barrier and mitigating physical impact. In addition, in the embodiment of the present invention, since the reflective layer 170 prevents diffuse reflection of the scintillator 180, which converts X-rays into visible light, the light efficiency is increased by improving the upper light path, thereby increasing the reliability and performance of DXD products. it improves

Although the above has been described based on the embodiments of the present invention, various changes or modifications may be made at the level of those skilled in the art. Accordingly, it will be understood that such changes and modifications are included within the scope of the present invention as long as they do not depart from the scope of the present invention.

100: array substrate 160: encap substrate
170: reflective layer 180: scintillator
190: adhesive layer 195: sealing part

Claims (12)

An encap substrate having a predetermined depth by being etched inside;
a reflective layer disposed on the encapsulation substrate to include a pattern;
a scintillator disposed on the reflective layer;
an array substrate bonded to the encapsulation substrate at a corner of the encapsulation substrate;
An adhesive layer disposed between the scintillator and one surface of the array substrate,
The size of the pattern of the reflective layer is proportional to the size of the pixel area of the array substrate,
A substrate for a digital X-ray detector, wherein an end of the scintillator faces the array substrate.
According to claim 1,
The reflective layer includes a pattern having a first height having the same size as the size of the one pixel area and patterns having a second height disposed around the pattern having the first height, wherein the first height is equal to or greater than the second height. Substrates for smaller, digital x-ray detectors.
According to claim 1,
The reflective layer includes patterns of a first height having the same size as the two or more pixel areas and patterns of a second height disposed around the patterns of the first height, wherein the first height is equal to or greater than the second height. Substrates for smaller, digital x-ray detectors.
delete An encap substrate having a predetermined depth by being etched inside;
a reflective layer disposed on the encapsulation substrate to include a pattern;
a scintillator disposed on the reflective layer;
an array substrate bonded to the encapsulation substrate at a corner of the encapsulation substrate;
An adhesive layer disposed between the scintillator and one surface of the array substrate,
The size of the pattern of the reflective layer is proportional to the size of the pixel area of the array substrate,
The adhesive layer includes an adhesive organic scintillator, a substrate for a digital X-ray detector.
An encap substrate having a predetermined depth by being etched inside;
a reflective layer disposed on the encapsulation substrate to include a pattern;
a scintillator disposed on the reflective layer;
an array substrate bonded to the encapsulation substrate at a corner of the encapsulation substrate;
An adhesive layer disposed between the scintillator and one surface of the array substrate,
The size of the pattern of the reflective layer is proportional to the size of the pixel area of the array substrate,
The encap substrate is glass,
A substrate for a digital x-ray detector, wherein a sealing portion including a sintered glass frit is disposed between a corner of the encap substrate and the array substrate.
disposing a reflective layer on which a pattern is disposed on an encapsulation substrate having a predetermined depth by etching the inside;
disposing a scintillator on the reflective layer;
disposing an adhesive layer on either the scintillator or the array substrate facing the scintillator; and
Adhering the array substrate and the encapsulation substrate;
The method of manufacturing a substrate for a digital X-ray detector, wherein the size of the pattern of the reflective layer is proportional to the size of the pixel area of the array substrate.
According to claim 7.
Disposing the reflective layer
A reflective layer comprising a pattern having a first height equal to the size of the one pixel area and a pattern having a second height disposed around the pattern having the first height, wherein the first height is smaller than the second height A method of manufacturing a substrate for a digital x-ray detector comprising the step of disposing.
According to claim 7,
Disposing the reflective layer
The reflective layer includes patterns having a first height having the same size as the two or more pixel areas and patterns having a second height disposed around the patterns having the first height, wherein the first height is equal to or greater than the second height. A method of manufacturing a substrate for a digital x-ray detector comprising disposing a smaller reflective layer.
According to claim 7,
The step of arranging the scintillator is
Depositing and growing a scintillator material on the reflective layer,
A method of manufacturing a substrate for a digital X-ray detector, wherein an end portion of the grown scintillator faces the array substrate.
According to claim 7,
The step of disposing the adhesive layer is
A method of manufacturing a substrate for a digital x-ray detector, comprising disposing an adhesive layer comprising a material comprising an adhesive organic scintillator.
According to claim 7,
The encap substrate is glass,
Adhering the array substrate and the encap substrate
disposing a glass frit between a corner of the encapsulation substrate and the array substrate;
and bonding the array substrate and the encap substrate by melting and then sintering the glass frit.

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