KR102517103B1 - Ultrasonic Inspection System - Google Patents

Abstract

The present invention relates to an ultrasonic inspection system, which inspects the defect of a wafer, and comprises: a transfer robot module (110) which has an arm unit to transfer a wafer from a loading module (101) to a specific inspection location for ultrasonic inspection; and an inspection module (230) which has at least one probe unit (231) to perform ultrasonic scanning concerning the wafers in the inspection location. The inspection module (230) comprises at least one jig unit (240) which fixes the probe unit (231) at the upper side of the inspection regular location for ultrasonic scanning of the wafer. The jig unit (240) is formed in a multi-channel method having first to Nth channels. At the first to Nth channels, first to Nth probe units are formed to be mounted to individually probe preset frequencies. Provided is the ultrasonic inspection system, wherein the distance between M and M+1 probe units is formed to be changeable in the ±X direction or the ±Y direction (here, N is a natural number, and M is a natural number smaller than N). Therefore, precision, reliability, and speed are improved.

Description

Ultrasonic Inspection System {Ultrasonic Inspection System}

The present invention relates to an ultrasonic inspection system, which inspects defects by imaging internal voids, peeling, etc. of semiconductors, electronic parts, and the like.

A technology that acquires an internal image of an examination target by using a signal having a frequency in the ultrasonic wave range can detect internal defects without deforming the medical field or manufacturing results targeting internal organs or fetuses during pregnancy. It is widely used in the field of non-destructive testing (NDT).

In relation to the field of non-destructive testing, information on the location of defects is very important in predicting the lifespan and evaluating the integrity of parts or materials, and accurate and rapid defect detection technology is required. Pulse Echo Technique, one of the conventional non-destructive defect detection techniques, is a technique for detecting defects according to the amount of energy reflected back from a defect existing inside a non-destructive test object. However, since the size of the reflected energy is dependent on the surface state of the reflective surface, it is difficult to accurately measure the size of the defect.

On the other hand, the ultrasonic inspection method has the advantage of high inspection efficiency because there is no risk of inspector being exposed to radiation when handling inspection equipment, and the inspection sensitivity is excellent and the inspection speed is fast, so the use is gradually increasing.

In general, such a non-destructive testing method using ultrasonic waves irradiates ultrasonic waves generated from an ultrasonic transducer, so-called transducer, into a non-destructive test object in the form of a beam by means of electrical energy generated from an ultrasonic flaw detector. The ultrasonic flaw detector interprets the reflected signal reflected from the non-destructive test object and returns to the probe as an electrical signal to determine whether or not the non-destructive test object has defects and the size of the defect.

However, in the case of the conventional ultrasonic inspection method, it is possible to measure only the overall moving distance of the transmitted wave and the diffraction wave generated thereby, so that non-destructive There was a problem of not being able to accurately measure the three-dimensional position of the defect existing inside the inspection body.

As a prior art, Korea Patent Publication No. 10-2006-0095338 'Non-destructive inspection equipment using ultrasonic waves' is disclosed. This enables the movement of the probe in three directions (X, Y, Z axis directions) to precisely adjust the angle and distance between the probe (meaning 'probe' of the present invention) and the inspection target using a linear motor. Initiate configuration. However, in the prior art, it is difficult to precisely control the position of the probe in three directions, and there is a limit in inspection efficiency due to the application of a single probe.

(Patent Document 1) Korean Patent Publication No. 10-2006-0095338

The technical problem to be solved by the present invention is to propose a system to which a multi-probe unit is applied, which can improve the accuracy, reliability, and speed of ultrasonic inspection, which is the biggest problem of a conventional single probe unit-applied structure.

In addition, the present invention intends to propose a system capable of performing more accurate position control of the probe unit by breaking away from the conventional three-way control method of the probe unit.

One embodiment of the present invention for solving the above problems is an ultrasonic inspection system for inspecting defects of a wafer, and unloading the wafer from the loading module 101 in which the wafers are loaded to inspect for ultrasonic inspection. A transfer robot module 110 equipped with an arm unit that transfers the wafer to a fixed position; and an inspection module 230 including at least one probe unit 231 to perform ultrasonic scanning on the wafer in the inspection position. The inspection module 230 includes at least one jig unit 240 for fixing the probe unit 231 above the inspection position for ultrasonic scanning of the wafer, the jig unit 240 is formed in a multi-channel manner having first to Nth channels, and first to Nth probe units configured to irradiate preset frequencies, respectively, are formed to be mountable to the first to Nth channels; , The distance between the Mth and M+1th probe units is formed to be changeable in the ±X direction or ±Y direction (where N is a natural number and M is a natural number smaller than N), providing an ultrasonic inspection system.

In addition, the jig unit 240 extends in one direction and includes N channel mounting parts 241 to which the first to N th probe units are coupled, and the N channel mounting parts 241 are connected in the one direction. However, the distance between the adjacent probe units may be changed by changing the distance between the adjacent channel mounting units.

In addition, the jig unit 240 is located on the lower side and is provided with a movement guide part 245 extending in one direction, and the N channel mounting parts 241 follow the movement guide part 245. , It may be formed to be movable in one direction or the opposite direction.

In addition, the ultrasonic inspection system includes a scan control module 250 for controlling the probe unit 231 and the jig unit 240; Further, the scan control module 250 includes area information of the wafer located at the inspection position; number information of the channel mounting unit 241; Interval information between adjacent channel mounting units 241; and set frequency information of the probe unit 231 mounted on each of the channel mounting units 241; In consideration of at least one of the information sets including, it may be formed to perform ultrasonic scanning on the wafer.

In addition, the jig unit 240 is connected to the driving means 260 and is formed to perform ultrasonic scanning of the wafer while moving in the ±X direction or ±Y direction, and the scan control module 250, Through the information set, the movement path of the jig unit 240 can be calculated.

In addition, the ultrasonic inspection system includes a scan operation module 290 that receives scan information through ultrasonic scanning by the first to Nth probe units and determines defects of the wafer in a preset manner using the scan information. ); The scan control module 250 receives location information of wafer defects from the scan operation module 290, and based on the location information, the probe unit coupled to the channel mounting unit 241 ( 231) may be formed to adjust the spacing between them.

In addition, the scan operation module 290 is a machine learning unit 291 that generates an artificial intelligence model using scan information on a wafer as learning information, using scan information from the first to Nth probe units. a machine learning unit 291 which pre-determines the possibility of defects in any sector of the wafer by doing so; The scan control module 150 receives, by the machine learning unit 291, defect prediction sector information in which the defect probability of the wafer is determined to be higher than a preset standard, and uses the defect prediction sector information. Thus, the gap between the probe units 231 coupled to the channel mounting portion 241 may be adjusted.

In addition, the scan control module 250 controls the moving speed of the jig unit 240 based on the defect expected sector information, but when ultrasonic scanning is performed for the position of the expected bond sector in the wafer, the The moving speed of the jig unit 240 may be temporarily reduced or set to be repeatedly moved.

In addition, the scan operation module 290 includes a sensing failure determination unit 292 for determining sensing failure of the first to Nth probe units in a preset manner; The scan control module 250 stops ultrasonic scanning of the probe unit determined to have poor sensing by the sensing failure determination unit 292, and scans the entire sector of the wafer toward the allocated sector of the probe unit. , it may be set to perform ultrasound scanning on the allocation sector by moving another probe unit adjacent to the probe unit.

By adopting the multi-probe unit method, the present invention can improve the accuracy, reliability, and speed of ultrasonic inspection, which are the biggest problems of the conventional single probe unit-applied structure.

In addition, the present invention can perform more accurate position control of the probe unit by breaking away from the conventional three-way control method of the probe unit.

1 is an overall configuration diagram of an ultrasonic inspection system according to an embodiment of the present invention.
2 is a conceptual diagram in which the overall configuration of an ultrasonic inspection system according to an embodiment of the present invention is divided by function.
3 is an overall conceptual diagram of an ultrasonic inspection system according to an embodiment of the present invention.
4 is a perspective view of an ultrasonic inspection system according to an embodiment of the present invention.
5 is a perspective view schematically showing a configuration corresponding to the ultrasonic inspection section of FIG. 1;
FIG. 6 is a conceptual diagram schematically illustrating the operation in FIG. 5 .
7 is a conceptual diagram of an ultrasonic inspection system according to a first embodiment of the present invention.
8 is a schematic schematic diagram of an ultrasonic inspection system according to a first embodiment of the present invention.
9 is a schematic diagram showing a modified example of the ultrasonic inspection system according to the first embodiment of the present invention.
FIG. 10 is a schematic view showing the jig unit of FIG. 9 before and after coupling.
11 is a schematic diagram schematically showing a state in which a jig bar assembly is formed by combining the jig unit of FIG. 10 .
12 is a schematic diagram schematically illustrating a movement path of a probe unit of an ultrasonic inspection system according to a first embodiment of the present invention.
13 is a schematic diagram schematically illustrating streamlining of a moving path of a probe unit of an ultrasonic inspection system according to a first embodiment of the present invention.
14 is a schematic schematic diagram of an ultrasonic inspection system according to a second embodiment of the present invention.
15 is a conceptual diagram of a moving assembly in an ultrasonic inspection system according to a third embodiment of the present invention.
16 is a schematic diagram of the operation of the moving assembly in the ultrasonic inspection system according to the third embodiment of the present invention.
Fig. 17 is a schematic diagram showing a modified example of Fig. 16;
18 to 20 are schematic diagrams for explaining a multi-probe unit of an ultrasonic inspection system according to an embodiment of the present invention.
21 is a flowchart of an ultrasonic inspection method using an ultrasonic inspection system according to a third embodiment of the present invention.
FIG. 22 is a flowchart illustrating specific operations of the moving assembly in FIG. 21 .

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following description is only for specifying the embodiments, and is not intended to limit or limit the scope of rights according to the present invention. What a person skilled in the art can easily infer from the detailed description and examples of the present invention should be construed as belonging to the scope of the present invention.

The terms used in the present invention have been described as general terms widely used in the technical field related to the present invention, but the meanings of the terms used in the present invention are the intentions of technicians working in the field, the emergence of new technologies, examination standards or precedents. etc. may vary. Some terms may be arbitrarily selected by the applicant, and in this case, the meanings of the arbitrarily selected terms will be described in detail. Terms used in the present invention should be interpreted as meanings reflecting the overall context of the specification, not just dictionary meanings.

Terms such as 'consisting' or 'comprising' used in the present invention should not be construed as necessarily including all of the components or steps described in the specification, and if some components or steps are not included, and when additional components or steps are further included, it should also be construed as intended from the term.

Terms to be described later are terms defined in consideration of functions in the present invention, and may vary according to intentions or customs of users, operators, and designers. Therefore, the definition should be made based on the contents throughout this specification.

As used herein, 'subject' includes a wafer to be inspected, and includes all objects that can be inspected using ultrasonic irradiation. In the present application, a wafer having a circular plane is described as an example, but the shape and type of the subject are not limited thereto, and any object to which the present invention can be applied is applicable.

Hereinafter, an ultrasonic inspection system according to the present invention will be described with reference to the drawings. It is stated in advance that all known means exhibiting the same effects and functions can be applied to parts/configurations omitted from description.

With reference to FIGS. 1 and 2 , the overall configuration and operation principle of the ultrasonic inspection system according to the present invention will be described.

The ultrasonic inspection system can be largely divided into a loading/unloading section and an ultrasonic inspection section, and there are more control/image processing sections processed by a program (or PC).

The 'loading/unloading section' consists of an LPM, a loading module (FOUP), and a transfer robot module. The transfer robot module places wafers in the loading module (FOUP) at the start of ultrasonic inspection or at the end of ultrasonic inspection. can be placed. That is, the wafer is shipped out (hereinafter referred to as 'unloading') by the transfer robot module formed of a dual arm and placed in the inspection position, and in the state where the ultrasonic inspection is completed, the wafer in the inspection position is loaded into the loading module. It can be understood as a concept of wearing (hereinafter referred to as 'loading').

The 'ultrasonic inspection section' may consist of a wafer aligner, a 3-axis linear motion, a probe unit, a wafer stage (including a water bath immersion method), and a drying unit. After aligning the wafer to the correct position for inspection, ultrasonic inspection is performed in the ultrasonic inspection section in a pulse echo method, and upon completion, the wafer is dried in the drying unit.

The 'control/image processing section' may be composed of a linear motion driver, pulser/receiver, ADC (Analog to Digital Conversion), and PC. The linear motion driver is configured in a gantry method and can be controlled in a PLC method. Here, the linear motion driver may be performed by feedback control according to the result of the ultrasonic test. This is referred to herein as the X-axis, Y-axis, and Z-axis east to be described later, and all known configurations that perform the same function may be applied.

The pulser unit transmits the square pulse signal to the probe unit, and when the signal reflected by the impedance difference at the defective part of the wafer enters the receiver, the continuous analog signal is converted into a digital signal through the ADC (Analogue to Digital Converter), and the PC An image may be obtained, and an ultrasound examination may be performed through image analysis.

Referring to Figures 3 and 4, the overall configuration of the present invention will be described in detail.

The ultrasonic inspection system according to the present invention may be composed of a transfer robot module 110, an inspection module 130, a scan control module 150, and a scan operation module 290.

The transfer robot module 110 is provided with an arm unit that unloads wafers from the loading module 101 loaded with wafers and transfers the wafers to an inspection position for ultrasonic inspection. For fast inspection, a dual arm method can be applied, and the first arm unit (Gripper1 in FIG. 2) moves the wafer, and after the ultrasonic inspection is completed, the second arm unit (Gripper2 in FIG. 2) moves the wafer in the same way. it works Preferably, the first and second arm units are alternately operated, and while one arm unit is operated, the other arm unit is maintained in a standby state of wafer transfer.

The transfer robot module 110 stably moves the wafers in the loading module 101 to the align unit (alignment unit) through the arm unit so that the wafers can be aligned.

Then, when the alignment is completed, the wafer is transferred to the inspection module 130 by the transfer robot module 110 again, and when the ultrasonic inspection is completed, the arm unit moves to the drying unit (drying unit) to dry, and when drying is completed, It is transferred to the loading module 101 by the transfer robot module 110. At this time, after drying, the drying state of the wafer may be checked through a separate sensor unit (not shown).

The inspection module 130 includes a probe unit 131, but since the multi-channel method is applied to the ultrasonic inspection system according to the present invention, a plurality of probe units 131 may be provided. The inspection module 130 performs ultrasonic inspection on the wafer currently in the correct position for inspection.

Specifically, the inspection module 130 may include a jig unit 140, a moving assembly 360, and a driving means 160.

The jig unit 140 performs a function of fixing the probe unit 131 above the inspection position for ultrasonic inspection of the wafer. As shown in FIG. 4 , it may be arranged to maintain a predetermined height on the probe unit 131 in the correct position.

The jig unit 140 is a multi-channel type having first to Nth channels, and the first to Nth channel mounting units 141-1 to 131-N are mounted on each channel. 141-N) is formed. At this time, the probe units 131-1 to 131-N are configured to be coupled/uncoupled to the first to Nth channel mounting parts 141-1 to 141-N, and the state and user are connected to the wafer, which is the object under test. An optimal probe unit 131 may be mounted according to the selection of .

Referring to FIG. 5 , signal generators 132 may be respectively provided. The signal generator 132 may apply 'Pulser Pre-AMP'. Two probe units 131-1 and 131-2 may be provided below the signal generator 132, and an ultrasonic signal is generated from the signal generator 132 connected to a power source (not shown), and the probe unit It is irradiated onto the wafer through (131-1, 131-2) and is configured to receive a reflected signal.

Referring first to FIG. 7 , the N number of channel mounting units 141 may be spaced apart from each other along one direction. Here, the one direction means the X direction, but it may be formed in the Y direction according to the arrangement of the jig unit 140.

The scan control module 150 is configured to control the operation of the probe unit 131 and the jig unit 140 . At this time, the scan control module 150 is configured to transmit/receive calculation information to/from the scan calculation module 290 and the focusing calculation module 320, so that feedback control can be performed. The scan control module 150 is configured to control the driving means 160 . While moving the jig unit 140 in the ±X direction or ±Y direction, ultrasonic inspection is performed on the wafer, and the operation of the probe unit 131 in a pulse echo method can be controlled.

Hereinafter, an ultrasonic inspection process will be briefly described based on the installation of a single probe unit.

First, A-scan is performed for the probe unit in the correct position. A-scan determines the defect of the wafer by expressing the magnitude (amplitude) of the ultrasonic echo signal received for any one point in the vertical direction of the sample with respect to time. The waveform of the echo signal with respect to time can be expressed using the probe unit, and the vertical side of the graph represents the intensity (amplitude) of the signal, and the horizontal side of the graph represents time. That is, it is a method of confirming a change in amplitude over time from a specific reference point. At this time, the ultrasonic beam focusing may be performed in such a way as to secure the maximum amplitude with respect to the bonding surface while finely moving the Z-axis distance.

A-scan irradiates ultrasonic signals in a vertical direction with respect to the wafer by the probe unit 131. At this time, it is configured to adjust the focusing distance having the maximum amplitude on the bonding surface of the wafer (bonding wafer). After that, the gate is set before and after the ultrasonic signal reflection signal of the bonding surface. The gate is used by limiting the area to be inspected to a certain section. Here, the focusing distance can be adjusted using the Z axis eastern portion 363 (see FIG. 4).

For example, an I-gate (Interface Gate) can be set to remove noise generated when the wafer surface is not smooth. In addition, when receiving an echo for a defect, it becomes a scale for determining how much of the defect is to be judged as a defect, and an A gate capable of measuring the defect and thickness of the inspection target can be set.

At this time, if a value higher than A gate is entered, it is determined as a defect, and if a value lower than A gate is entered, the value is discarded, so that the defect is not recognized.

First, one-dimensional A-Scan data in which the size of the reflection signal is displayed on the time axis from defects generated on the bonding surface inside the wafer is generated using information on the size of the echo signal (AMP) and the time of travel (TOF). do.

At this time, it is possible to selectively generate B-scan data imaging a cross-section of the inside of the subject. Configured to generate C-Scan data of a 3D image by storing each reflected signal received while moving the position determined to be defective by a predetermined interval by the probe unit 131, and then processing them comprehensively in a memory It can be.

The C-scan is configured to irradiate an ultrasonic signal by setting X-axis and Y-axis scan areas in the probe unit 131 . The jig unit 340 may be configured to irradiate ultrasonic signals while moving using the X-axis east portion 361 and the Y-axis east portion 362 (see FIG. 4) of the present invention.

In the case where the wafer to be inspected is a bonding wafer composed of multi-layer surfaces, A-scan and C-scan are performed on each of the multi-layer surfaces (for example, when composed of N layers), so that the first to Nth layers are scanned. image can be formed.

The images of the first to Nth layers may be transmitted to the image processing unit 293 of the scan operation module 290, and scan image information may be calculated in a preset manner. This will be described later.

Referring to FIGS. 6, 10 and 11, a distilled water injection method applicable to the ultrasonic inspection system according to the present invention will be described.

The probe unit 131 applied to the present invention has a structure in which a water holder is coupled. It means a method in which water is injected from the external distilled water supply unit 180 through two tubes and sprayed like a waterfall through a nozzle closely attached to the lens in the center of the probe unit 131 at the end. Referring to FIG. 11, at this time, ultrasonic waves are generated through the lens of the probe unit 131, and the distilled water spraying unit 143 and the tip of the lens of the probe unit 131 are completely in close contact without an air-gap. It is a structure in which ultrasonic energy is stably transmitted in water without energy loss of ultrasonic signals. The water used for ultrasound examination is 'Di water', which means distilled water.

The present invention can be applied to a water immersion method in which a wafer is completely immersed in water, but when applied in a distilled water spray method as described above, resistance to water can be reduced compared to a water immersion method and speed can be improved, and the wafer can be completely watered. Since it does not have to be immersed in, the generation of bubbles that cause noise can be reduced. In addition, since the degree of freedom of movement of the probe unit 131 is increased, more accurate ultrasonic inspection is possible.

Distilled water passages 144 are provided in each jig unit 140, and the distilled water passages 144 are connected to the distilled water supply unit 180, and the supplied distilled water is sprayed downward through the distilled water spray unit 143. . At this time, a flow sensor (not shown) may be provided on the side of the distilled water spraying unit 143, and the amount of distilled water injected may be controlled using the flow sensor and the flow valve. The flow valve can be automatically turned on/off by applying an electronic valve.

As will be described later, when a multi-probe unit method having different set frequencies is applied, a flow sensor and a flow valve play a very important function. When the set frequency is different, the size of the lens of the probe unit may be different. When the size of the lens is changed, the amount of distilled water sprayed between the lens and the interface is also changed, so a flow sensor and flow valve control corresponding to the set frequency are required.

Referring again to FIG. 6 , a vacuum chuck and a bubble trap may be provided at an inspection station (also referred to as a 'stage') on which a wafer is seated. The bubble trap is connected to the water circulation system so that distilled water can be circulated continuously. Through this, only bubbles in distilled water can be effectively removed, and contamination of distilled water can be prevented through a water purification function. An air membrane filter (not shown) may be provided.

As an exemplary structure, the bubble trap is composed of a tube pipe, an air membrane filter, a water filter, and a pump. It is located at the lower part of the wafer stage, and when water containing bubbles enters the tube, it passes through the membrane filter. At this time, only bubbles can be effectively removed through the pump. At this time, since a water filter is also included, contamination of water can be prevented.

Bubbles are generated during the ultrasonic inspection process, and the water containing the bubbles moves through the lower part of the water tank surrounding the stage. Clean distilled water from which bubbles are removed through the bubble trap is injected into the jig unit, and at this time, ultrasonic waves and distilled water are supplied together to perform ultrasonic inspection on the wafer.

For reference, distilled water is used separately at 1 to 3 ml or 4 to 10 ml per minute, and may be used separately according to the size of the probe unit and the test object.

Hereinafter, a first embodiment of an ultrasonic inspection system according to the present invention will be described with reference to FIGS. 7 to 13 . Since the main components of the present invention have been described above, redundant description will be omitted.

In the first embodiment, the probe unit 131 is formed in a detachable structure to the jig unit 140. To this end, the jig unit 140 may be formed in a multi-channel manner including first to Nth channels. In this case, the first to Nth probe units are formed to be mounted on the first to Nth channels to respectively irradiate preset frequencies. Here, each channel may be understood as a module type including all functions necessary for generating an ultrasonic signal and receiving a reflected signal.

As shown in FIG. 7 , the jig unit 140 extends in one direction, and may include N number of channel mounting parts 141-1 and 141-2 along one direction. They are spaced apart at preset intervals. The interval needs to be set to a distance that does not interfere with each other between ultrasonic signals and reflected signals. Of course, when the present invention is the distilled water spray type described above, it is preferable that the sprayed distilled water is also configured not to interfere.

The scan control module 150 that controls the operations of the probe unit 131 and the jig unit 140 is configured to check the number information of the channel mounting unit 141 and mounting information of the probe unit 131 . This is because the moving path of the jig unit 140 can be set differently according to the mounting information of the probe unit 131 . When the probe units 131 are densely mounted in the X direction, the moving distance of the jig unit 140 in the X direction can be formed relatively short. Of course, even in this case, the moving distance may be set to be the same, and the same position of the wafer may be inspected a plurality of times. To this end, corresponding coordinates of the wafer, which is an object to be inspected, may be automatically set according to the mounting information of the probe unit 131 . If a defect is found at a specific location, the coordinate information is automatically transmitted to the scan operation module 290 and stored in a memory unit (not shown), and tracking management is possible.

7 shows the dual probe unit 131. The description will be made on the premise that each probe unit 131 is mounted. The dual probe unit 131 is composed of single probe units 131 on both sides of the wafer based on 180 degrees, and can be independently controlled. As an example of the operation, in the ultrasonic examination preparation step, one probe unit 131 is selected and performed in order to focus the ultrasonic wave, and then the C-scan is performed simultaneously by dividing the probe unit 131 by 180 degrees. Through this, it is possible to scan at a higher speed than ultrasonic inspection of a 200 mm or 300 mm wafer in the conventional single probe unit 131 method, thereby increasing the inspection speed. Taking a 300mm wafer as an example, the reflection signals obtained by dividing each by 180 degrees are finally combined, and an entire image of the 300mm wafer can be secured. This series of processes may be performed by the image processing unit 293 of the scan operation module 290, and the wafer defect determination unit 2931 determines wafer defect information through a predetermined method. This includes all information such as the type of defect, the location of the defect, and the size of the defect.

The jig unit 140 is connected to the driving means 160 and moves in the ±X direction or ±Y direction to perform ultrasonic inspection on the wafer. At this time, the scan control module 150 sets the movement path of the jig unit 140 through the number information of the channel mounting unit 141 and the mounting information of the probe unit 131 .

Referring to FIG. 8 , the scan control module 150 is in a state in which at least some of the N number of channel mounting units 141 are in a mixed state with inactive channel mounting units to which probe units are not mounted and active channel mounting units to which probe units 131 are coupled. If it is determined that, the movement path of the jig unit 140 is set based on the position of the active channel mounting unit. That is, the channel mounting unit 141 can be divided into an inactive channel mounting unit and an active channel mounting unit, and a movement path is created based on the active channel mounting units 141-1, 141-2, 141-4, and 141-6.

The first to Nth probe units may be composed of multi-frequency combinations, at least some of which have different set frequencies. That is, it is a structure in which the probe unit 131 having a different set frequency can be freely attached or detached.

The jig unit 140 is connected to the driving means 160 and is connected through the power transmission unit 172 as a medium. The power transmission unit 172 may be composed of a coupling shaft extending in the Z-axis direction and a coupling shaft connecting portion formed such that the coupling shaft is movable in the X-axis and Y-axis directions. Depending on the mounting positions of the probe units 131-1, 131-2, 131-4, and 131-6 on the N channel mounting parts 141, the center of gravity of the jig unit 140 may vary, and the probe unit ( 131), it is preferable that the coupling shaft is formed to be movable in order to maintain the balance of the jig unit 140.

As an additional configuration, when a plurality of probe units 131-1, 131-2, 131-4, and 131-6 are mounted on the N channel mounting parts 141, the weight of the jig unit 140 may increase. . Inertia increases according to the increased weight, and as vibration occurs when the direction is changed by the driving means 160, a problem may occur in that an air gap is created. A damper unit 171 that absorbs these vibrations may be provided. In the process of moving the jig unit 140, ultrasonic inspection is performed, stable movement of the jig unit 140 is very important, and by buffering the shock through the damper unit 171, precise ultrasound inspection can be performed there is.

12 shows a process of performing an ultrasound examination in the X direction. According to the user or manager, ultrasonic inspection may be performed while the jig unit 140 repeatedly moves in the ±X direction. The scan width (cover area) in the X-axis direction can be adjusted according to the set frequency, and the scan range can be set and progressed in C-scan mode.

FIG. 13 shows a curvilinear movement path in order to minimize vibration applied when the direction of the jig unit 140 is changed. This is a setting that minimizes vibration when switching the vertical direction in the X or Y direction. The curvature of the streamlined path may be set in consideration of the size of the wafer, the set frequency, and the like. That is, in the straight direction, vibration is dampened using the above-described damper unit 171, and in the direction change, a streamlined path is formed to minimize applied vibration. An example of a wired path setting method is as follows. a) Setting the first movement path by straightening the overall path, b) Classifying the direction change section among the linearized primary movement paths, c) Wafer area, set frequency of the probe unit, cover area of the probe unit (individual probe unit scan area), it can be performed in the order of quadrangling the direction change section, d) setting the streamlined curve along the diagonal line in the squared direction change section, and e) setting the curvature of the streamlined curve. .

9 shows a jig bar assembly 170 in which a plurality of jig units 140a and 140b are coupled. The jig bar assembly 170 may be understood as a structure in which a plurality of jig units 140a and 140b are coupled in a ±X direction or a ±Y direction and extended. 9 illustrates a structure in which two jig units 140a and 140b are coupled in the X direction as an example, the present invention is not limited thereto, and the jig unit can be coupled in both the X and Y directions, and three A structure in which the above jig units are mixed and coupled in the X direction and the Y direction is also possible. In this case, the jig bar assembly 170 may be formed in a 'T-shaped structure' as a whole.

Referring to FIG. 9 , the jig bar assembly 170 has a structure in which the first jig unit 140a and the second jig unit 140b are coupled in the X direction and extended. For their coupling, a first coupling portion 173a is formed at one end of the first jig unit 140a, and a second coupling portion 173a is formed in a direction facing the first coupling portion 173a of the second jig unit 140b. 2 coupling parts 173b may be formed. For coupling expandability of the jig bar assembly 170, it is preferable that coupling parts are formed at both ends of the individual jig units 140a and 140b, respectively. 10 shows a concept in which the distilled water flow path 144 is also connected together when the jig bar assembly 170 is formed. When the first and second couplers 173a and 173b are physically coupled, a fitting structure in which distilled water passages 144 through which distilled water flows are connected to each other may be incorporated. All known structures may be applied to the passage connecting means.

When a plurality of probe units 131-1, 131-2, 131-4, and 131-6 are mounted on the N channel mounting units 141, a multi-frequency combination will be described with reference to FIGS. 18 to 20 first. .

18 (a) to (d) show the form of the jig unit 140 having two, three, four, and six channel mounting units.

19 shows a jig unit 140 formed to have a first or second set frequency. It shows the structure of the jig unit 140 in which set frequencies of 100 MHz and 200 MHz are alternately arranged. As shown in FIG. 19 , when there are two joint surfaces, 100 MHz is configured to inspect the lower joint surface and 200 MHz to inspect the upper joint surface.

20 shows an exemplary form of a jig unit 140 having four channel mounting parts. The resolution and penetration distance are different for each set frequency, and the higher the set frequency, the higher the resolution but the shorter the ultrasonic penetration distance inside the wafer. In this way, it is possible to increase the defect detection efficiency of the joint surface through the resolution and the ultrasonic penetration distance secured through different set frequency combinations. In the case of a wafer having a multi-layer bonding surface (consisting of first to fourth bonding surfaces), more precise analysis is performed, and thus inspection speed and detection efficiency can be simultaneously realized. In addition, in the case of a combination of different set frequencies, each channel may be independently controlled.

Compared to a single probe unit or a single set frequency, in the case of ultrasonic inspection of a wafer with a multi-layer bonding surface, the conventional structure needs to perform the same ultrasonic inspection over a plurality of times while changing the set frequency, whereas the ultrasonic test according to the present invention The inspection system can dramatically improve the processing speed of ultrasound inspection.

The present invention may be configured in combinations other than those shown in FIGS. 20 and 21 .

For example, in the case of two probe units, 50/100 MHz, 50/200 MHz, and 100/300 MHz can be formed, respectively, and in the case of four probe units, 50/100/50/100 MHz, 50/200/50/200 MHz , 100/300/100/300 MHz, and the like. In addition, in the case of 6 probe units, 50/100/50/100/50/100 MHz, 50/200/50/200/50/200 MHz, 100/300/100/300/100/300 MHz may be configured.

Referring to Figures 19 and 20, when detecting defects such as voids, cracks, peeling, etc. for two bonding surfaces, it is possible to improve the detection efficiency for irregular bonding shapes for bonding surfaces through having different set frequencies. . The resolution improves as the set frequency increases, but the beam size of the ultrasonic signal is small and the ultrasonic penetration distance is short, making it difficult to secure images of various voids and cracks having atypical shapes. In order to solve this difficulty, it is possible to improve the detection efficiency for defects of various atypical shapes by simultaneously using high and low set frequencies.

As an exemplary operation, in a dual probe unit having different set frequencies, ultrasonic inspection may be performed in a state in which a frequency having a high set frequency is focused on a bonding surface. A high set frequency improves the resolution of the bonding surface, and a low frequency has a relatively large ultrasound beam size, so it is possible to secure images of various atypical shapes around the bonding surface.

Referring to FIG. 11, a case in which a jig bar assembly 170 in which a plurality of jig units 140 are coupled to each other according to the present invention will be described. In FIG. 11, a structure in which a single channel mounting portion is formed in an individual jig unit 140 will be described based on the structure. However, as shown in FIG. 9 , it may also be applied to a structure in which a plurality of channel mounting parts are formed in a single jig unit 140 .

Each jig unit 140 is provided with a distilled water flow path 144, and when the jig unit 140 is connected in the X direction or the Y direction, each distilled water flow path 144 may also be configured to communicate with each other. As an example of the structure, each of the individual jig units 140 is provided with a flow sensor, and each flow sensor may have a built-in circuit means to transmit an electrical signal. When the individual jig units 140 are physically fastened and connected, they are also electrically connected so that individual flow sensors and flow valves can be controlled.

Hereinafter, a second embodiment of the ultrasonic inspection system according to the present invention will be described with reference to FIG. 14 . A description of a configuration overlapping with that of the first embodiment described above will be omitted.

Referring to FIG. 14, the jig unit 240 applied to the second embodiment is formed in a multi-channel manner having first to Nth channels, and the first to Nth channels are formed to irradiate preset frequencies, respectively. The first to Nth probe units 231-1, 231-2, 231-3, and 231-4 are formed to be mountable. As the first to Nth probe units 231-1, 231-2, 231-3, and 231-4 are formed to be mountable, when a specific probe unit needs to be replaced or repaired, only the corresponding probe unit can be separated. there is.

The jig unit 240 applied to the second embodiment has a structure formed so that the distance between the Mth and M+1th probe units can be changed in the ±X direction or ±Y direction (where N is a natural number and M is is a natural number less than N). In FIG. 14, first to fourth probe units 231-1, 231-2, 231-3, and 231-4 are shown, and the respective distances are a first interval d1, a second interval d2, and a third interval d1. It can be divided by the interval (d3). Here, the first to third intervals d1, d2, and d3 may be changed.

In addition, when the distance between them is changed, the overall center of gravity of the jig unit 240 may be changed, so as in the first embodiment described above, for stable movement of the jig unit 240, the variable power transmission unit (272).

Specifically, the jig unit 240 extends in one direction (the X direction in FIG. 14), and the first to Nth probe units 231-1, 231-2, 231-3, and 231-4 are coupled to each other. It includes N number of channel mounting parts 241-1, 241-2, 241-3, and 241-4. At this time, the N number of channel mounting units 241-1, 241-2, 241-3, and 241-4 are disposed spaced apart along one direction, and the distance between the adjacent channel mounting units is changed so that neighboring probe units are spaced apart. It is a configuration that can change the distance of .

A moving guide part 245 is mounted on the lower part of the jig unit 240 so that the distance between the probe units can be adjusted. As an example, the movement guide unit 245 may be formed in a rail manner. The channel mounting parts 241-1, 241-2, 241-3, and 241-4 are coupled to be movable on the rail, and the channel mounting parts 241-1, 241-2, 241-3, and 241-4 have It is a structure in which the probe units 231-1, 231-2, 231-3, and 231-4 are mounted and fixed.

As described above, the jig unit 240 applied to the present invention is a configuration capable of freely and independently controlling the distance between the multi-probe units as needed. When defects continuously occur in a specific sector of the wafer, the jig unit 240 In addition to setting the movement path, by changing the position of the probe unit mounted on the jig unit 240, there is an effect of performing more precise analysis.

14 shows the structure of the jig unit 240 extending in the X direction, and the first to N th probe units 231-1, 231-2, 231-3, and 231-4 may also have a changeable distance in the X direction. Although the structure is shown, the interval in the Y direction may also be configured to be changeable.

The ultrasonic inspection system according to the present invention can provide a system optimized for a configuration in which the distance between probe units can be changed. Calculation processing and control processing accompanying this may be performed in the scan control module 250 .

The scan control module 250 means a controller function module that controls the probe unit 231 and the jig unit 240 . Various types of information related to ultrasound examination may be input, and may be configured to perform feedback control.

Specifically, the scan control module 250 includes information on the area of the wafer located at the correct position for inspection, information on the number of channel mounting units 241, information on the distance between adjacent channel mounting units 241, and mounting on each of the channel mounting units 241. Ultrasound examination may be performed in consideration of at least one of set frequency information of the probe unit 231.

As an example, a movement path of the jig unit 240 may be calculated using the above information set. The jig unit 240 moves in the ±X direction or the ±Y direction and is formed to perform an ultrasonic inspection on a wafer at the correct inspection position, so the moving path of the jig unit 240 is very important. If the movement path is not properly set, there is a problem in that the ultrasonic inspection of a specific sector of the wafer may be omitted or, on the contrary, the inspection speed may be greatly reduced by excessively redundant inspection of all sectors.

Accordingly, it is preferable to set the movement path of the jig unit 240 using information on the area of the wafer, information on the number of the channel mounting parts 241, and distance information between the channel mounting parts 241. Using the above information set, it is possible to set the movement range of the jig unit 240 in the X and Y directions. In addition, probe units having different set frequencies may be installed in the ultrasonic inspection system according to the present invention. Since the characteristics may be different for each set frequency, it is preferable to set the moving path of the jig unit 240 in consideration of this.

The ultrasonic inspection system according to the present invention may receive scan information through ultrasonic inspection by the first to Nth probe units, and determine defects of a wafer in a preset manner using the scan information. As described above, after the X-axis and Y-axis scan areas for the wafer are set for each individual probe unit, ultrasonic inspection is performed.

Referring again to FIG. 3 , the image processing unit 293 generates scan images for each probe unit and synthesizes them to generate scan images for the entire wafer.

The wafer defect determination unit 2931 uses the scanned image received from the image processing unit 293 to determine defects in the wafer. In particular, the wafer defect determination unit 2931 may acquire various types of information, such as the type and location of defects, as well as the presence or absence of defects.

The ultrasound inspection system according to the present invention includes a machine learning unit 291 for generating an artificial intelligence model. The machine learning unit 291 includes an artificial intelligence model 2911 generated through machine learning. The artificial intelligence model 2911 may be implemented as a convolutional neural networks (CNN) type deep learning model.

The machine learning unit 291 may use the artificial intelligence model 2911 to determine the possibility of a defect in an arbitrary sector of the wafer in advance. In particular, the machine learning unit 291 may determine the possibility that a defect continuously occurs in a specific sector of the wafer and perform an intensive ultrasound examination on the corresponding sector.

In order to intensively perform ultrasonic inspection on the corresponding sector, the scan control module 150 receives defect prediction sector information in which the defect probability of the wafer is determined to be greater than or equal to a preset standard, and uses the defect prediction sector information to transmit the channel mounting unit 241. It is configured to adjust the distance between the probe units 231 coupled to the.

As an example, the probe unit 231 may be set to approach the vicinity of the predicted defect sector using the predicted defect sector information. This means that the existing probe units 231 disposed at equal intervals are concentrated toward a specific position or moved toward a specific position. Since a sector in which a defect has occurred is highly likely to also have a defect in sectors adjacent thereto, reliability of inspection may be improved by performing an intensive ultrasonic inspection on the corresponding area.

As another example, the moving speed of the jig unit 240 is controlled based on the expected defect sector information, but when ultrasonic inspection is performed on the position of the expected bonding sector in the wafer, the moving speed of the jig unit 240 It can be set to temporarily decrease or repeat movement. This is also to perform a more precise ultrasound examination.

As described above, in the second embodiment of the ultrasonic inspection system according to the present invention, the interval between the probe units can be formed variably. In the case of a multi-probe unit configuration, when a specific probe unit is determined to have poor sensing, it is necessary to exclude it.

To this end, the present invention includes a sensing failure determination unit 292 that determines sensing failure of the first to Nth probe units in a preset manner.

As an example of determining the sensing failure, in the process of performing ultrasonic inspection on a specific sector of the wafer, the specific sector may be configured to be subjected to the same ultrasonic inspection using a plurality of probe units. When the wafer is placed in the correct inspection position, coordinates are assigned to the entire area of the wafer, and ultrasonic inspection is performed using a plurality of probe units for a specific sector having predetermined coordinates, while conversely, the sensing accuracy of the probe unit is increased. is to judge By comparing scan information on a specific sector performed by a plurality of probe units with each other, a probe unit that provides scan information outside the error range is excluded from performing the ultrasonic test. At this time, it may be configured to accumulate and store not only the error range but also the number of errors. In addition to this, various algorithms for determining the defect of the probe unit may be applied.

As an example, when the second probe unit is judged to have poor sensing, it is difficult to trust the inspection result of the second probe unit, so the ultrasound examination of the second probe unit is stopped, and the first and third probe units are used. 2 probe unit can be replaced. The entire wafer area, which was divided based on three probe units, should be re-divided based on two probe units. For this purpose, the scan control module 250 is configured to automatically control the positions of the first and third probe units. It can be.

Hereinafter, a third embodiment of the ultrasonic inspection system according to the present invention will be described with reference to FIGS. 15 to 17 .

The third embodiment is a structure including a moving assembly 360.

The moving assembly 360 may move the jig unit 340 in ±X directions, ±Y directions, and ±Z directions. 4 shows a schematic diagram of an ultrasonic inspection system equipped with a moving assembly 360, which is referred to together. In the third embodiment, the multi-probe unit method can be applied similarly to the first and second embodiments described above.

The moving assembly 360 is provided between the channel mounting unit and the probe unit coupled to the corresponding channel mounting unit, and includes a Z-axis fine driving unit 364 that minutely moves the probe unit in the ±Z direction. Referring to FIG. 15, the eastern part of the X-axis 361, the eastern part of the Y-axis 362, and the eastern part of the Z-axis 363 are configured to move the jig unit 340, and the Z-axis fine drive unit 364 is the probe unit 364 ), the object of the combination is distinguished in that it is a configuration that moves the However, the Z-axis fine actuator 364 complements the Z-axis actuator 363, so that the position of the probe unit can be more accurately controlled. As an example, the Z-axis actuator 363 may be configured to have an operating range of 1 to 100 mm, whereas the Z-axis fine actuator 364 may operate in a range of 0.1 to 1 mm or 0.01 to 1 mm.

Like the first and second embodiments described above, a multi-probe unit method may be applied to the third embodiment, and their set frequencies may be formed to be different from each other. Since the optimal height of the probe unit is different for each set frequency, it can be individually controlled using the Z-axis micro-drive unit 364 . Preferably, ultrasonic inspection is performed in a state in which the heights of all the multi-probe units are controlled using the Z-axis micro-drive unit 364.

The optimal height of the probe unit is related to the focusing of the lens provided in the probe unit. To this end, the ultrasonic inspection system according to the present invention includes a focusing calculation module 320. Focusing optimization information from the wafer is calculated using the focusing calculation module 320 . Here, the focusing optimal information means all information or conditions for forming optimal focusing, including the focusing distance. As described above, this is to consider the set frequency of each probe unit.

16 shows that fine control is performed individually for each probe unit by the Z-axis fine drive unit 364 in the ultrasonic inspection system according to the present invention.

17 shows a system structure including X-axis micro-drive units 3611 and 3612 and Y-axis micro-drive units 3621 and 3622 in addition to the Z-axis. While the Z-axis fine actuator 364 is mainly used to adjust the focusing of the probe unit, the X-axis fine actuators 3611 and 3612 and the Y-axis fine actuators 3621 and 3622 perform precise analysis on a specific position of the wafer. It can be operated during the process. In addition, it may be used to align the positions of the probe units individually according to the size of the wafer or the die, or may be used to finely adjust the distance between the probe units when applied to the structure of the second embodiment.

Hereinafter, a method using the ultrasonic inspection system according to the present invention will be described with reference to FIGS. 21 and 22 .

Referring to FIG. 21 , the method according to the present invention includes steps S310 to S350.

Step S310 is a step in which the wafer, which is an object to be inspected, is moved to an inspection position by the transfer robot module 110 .

In step S320, A-scan is performed on the vertical cross section of the wafer using the first to N th probe units, wherein each of the first to N th probe units scans the junction surface or the entire cross section of the wafer. This step is to set the focusing distance to have the maximum amplitude. That is, when A-scan is performed, a process of optimizing the focusing distance for the surface to be analyzed is performed.

In step S330, in the scan operation module 390, the gate for the ultrasonic reflection signal is set using the first scan information acquired through the A-scan, and the X-axis and Y-axis scan areas of the wafer are set. step to become This is the step of preparing the C-scan mode by setting the setting frequency and probe unit with the highest amplitude for the reflection signal on the bonding surface or inner surface and setting the gate for the reflection signal.

Step S340 is a step in which C-scan is performed on the scan area of step S330, and the X axis eastern part 361 and Y axis eastern part 362 move the jig unit 340 in ±X and ±Y directions. This is a step in which second scan information for each of the first to Nth probe units is obtained by performing ultrasound examination while the first to Nth probe units are moved using ). That is, ultrasonic inspection is performed on the entire area of the wafer, and second scan information may be acquired by individual probe units. Each probe unit may have different target scan areas, and if there are overlapping areas, one of them may be ignored by a preset method.

Step S350 is a step in which scan image information for the wafer is calculated based on the second scan information in the image processing unit 293 of the scan operation module 390, and the first to N th probe units are respectively 2 This is a step of synthesizing scan information into one scan image using a preset method. It is a method of generating and collecting images for each set frequency, and finally displaying them as one scanned image.

Hereinafter, a method of controlling a moving assembly in an ultrasonic inspection process will be described.

The method for controlling the moving assembly includes steps S321 to S323.

Step S321 is a step in which the Z-axis positions of the first to N-th probe units are primarily set using the Z-axis east part 363 that moves the jig unit 340 in the ±Z direction.

In step S322, in the process of performing A-scan on the vertical cross section of the wafer using the first to Nth probe units 331, the focusing operation module 320 obtains the focusing optimum information for the wafer. is the step in which is created. As the process of optimizing the ultrasonic amplitude for the focusing distance proceeds, the focusing optimization information may be generated.

Step S323 is a step of setting the focusing distance by finely moving the first to Nth probe units in the ±Z direction by the Z-axis fine drive unit 364 based on the focusing optimization information.

When the focusing distance is finally set in this way, C-scan may be performed using the X-axis eastern part 361 and the Y-axis eastern part 362.

In addition, in step S323, when there is a probe unit group having at least two or more probe units having the same set frequency among the first to Nth probe units, A-scan need not be performed for all probe units.

A-scan is performed for only one probe unit of the corresponding probe unit group to generate focusing optimization information, and based on the focusing optimization information, focusing distances may be set for all probe unit groups at once.

Meanwhile, the present invention may be connected to the machine learning unit 291 of the scan operation module 290 to transmit and receive information. The focusing optimization information is transmitted to the machine learning unit 291 and used as learning data. The Z-axis actuator 363 and the Z-axis fine actuator 364 may be operated to automatically set the focusing distance through a lot of learning data.

The above embodiment in the present invention is an example, and the present invention is not limited thereto. Anything that has substantially the same configuration as the technical concept described in the claims of the present invention and achieves the same effect is included in the technical scope of the present invention.

101: loading module
110: transfer robot module
130, 230: inspection module
131, 231, 331: probe unit
140, 240, 340: jig unit
141, 241: channel mounting part
143: distilled water injection unit
144: with distilled water
150, 250, 350: scan control module
160: driving means
170: jig bar assembly
172, 272: power transmission unit
180: distilled water supply unit

Claims (9)

An ultrasonic inspection system for inspecting wafer defects,
a transfer robot module 110 equipped with an arm unit for unloading wafers from the loading module 101 loaded with wafers and transferring the wafers to an inspection position for ultrasonic inspection; and
An inspection module 230 having at least one probe unit 231 and performing ultrasonic scanning on the wafer in the inspection position,
The inspection module 230,
For ultrasonic scanning of the wafer, at least one jig unit 240 for fixing the probe unit 231 above the inspection position,
The jig unit 240,
It is formed in a multi-channel manner having first to Nth channels, and first to Nth probe units configured to irradiate preset frequencies, respectively, are mountable to the first to Nth channels,
The distance between the Mth and M+1th probe units,
It is formed to be changeable in the ±X direction or ±Y direction (provided that N is a natural number and M is a natural number smaller than N),
The jig unit 240,
It includes N channel mounting parts 241 extending in one direction and to which the first to N th probe units are coupled;
The N channel mounting parts 241,
Doedoe spaced apart along the one direction, changing the distance between the neighboring probe units by changing the distance between the neighboring channel mounting units,
Ultrasonic Inspection System. delete According to claim 1,
The jig unit 240,
It is located on the lower side and is provided with a movement guide part 245 extending in the one direction,
The N channel mounting parts 241,
Formed to be movable in one direction or the opposite direction along the movement guide part 245,
Ultrasonic Inspection System. According to claim 3,
The ultrasonic inspection system,
A scan control module 250 controlling the probe unit 231 and the jig unit 240; further comprising,
The scan control module 250,
Area information of the wafer located at the inspection position;
number information of the channel mounting unit 241;
Interval information between adjacent channel mounting units 241; and
Formed to perform ultrasonic scanning on the wafer in consideration of at least one of information sets including; set frequency information of the probe unit 231 mounted on each of the channel mounting units 241
Ultrasonic Inspection System. According to claim 4,
The jig unit 240,
It is connected to the driving means 260 and is formed to perform ultrasonic scanning of the wafer while moving in the ±X direction or ±Y direction,
The scan control module 250,
Calculating the movement path of the jig unit 240 through the information set,
Ultrasonic Inspection System. According to claim 5,
The ultrasonic inspection system,
A scan operation module 290 that receives scan information through ultrasonic scanning by the first to Nth probe units and determines defects of the wafer in a preset manner using the scan information;
The scan control module 250,
Formed to receive location information of wafer defects from the scan operation module 290 and adjust a distance between probe units 231 coupled to the channel mounting portion 241 based on the location information,
Ultrasonic Inspection System. According to claim 6,
The scan operation module 290,
A machine learning unit 291 generating an artificial intelligence model using scan information of a wafer as learning information, and determining the possibility of a defect in an arbitrary sector of the wafer by using the scan information of the first to N th probe units. Including, a machine learning unit 291 that determines in advance;
The scan control module 250,
A probe unit coupled to the channel mounting unit 241 by receiving defect prediction sector information determined by the machine learning unit 291 to be higher than a preset standard, and using the defect prediction sector information Formed to adjust the spacing between (231),
Ultrasonic Inspection System. According to claim 7,
The scan control module 250,
Based on the defect prediction sector information, the moving speed of the jig unit 240 is controlled, but when ultrasonic scanning is performed for the position of the expected bonding sector in the wafer, the moving speed of the jig unit 240 is temporarily reduced. set to decrease or repeat movement,
Ultrasonic Inspection System. According to claim 6,
The scan operation module 290,
Further comprising a sensing failure determination unit 292 for determining sensing failure of the first to N th probe units in a preset manner;
The scan control module 250,
The sensing failure determination unit 292 stops ultrasonic scanning of the probe unit judged to have poor sensing, and moves another probe unit adjacent to the probe unit toward the assigned sector of the probe unit among all sectors of the wafer, Set to perform ultrasonic scanning for the assigned sector,
Ultrasonic Inspection System.

Images