KR102511463B1 - Thin film transistor array for display device and method for fabricating the same - Google Patents

Abstract

The present invention relates to a film type thin film transistor array usable in a flexible liquid crystal display device, a flexible liquid crystal display device including the same, and a method for manufacturing each of the same. Since the transistor array is formed, even if a high-temperature process for forming the semiconductor layer is applied, there is no fear of deformation of the base material required for forming the semiconductor layer, so that a reliable film-type thin film transistor array and a flexible liquid crystal display including the same can be manufactured. There are advantages to

Description

Film type thin film transistor array, flexible liquid crystal display including the same, and flexible liquid crystal display manufacturing method

The present invention relates to a flexible liquid crystal display device, and more particularly, to a film type thin film transistor array usable in the flexible liquid crystal display device, a flexible liquid crystal display device including the same, and a manufacturing method for each of the same.

As the touch input method has been spotlighted as a next-generation input method, attempts are being made to introduce the touch input method to more various electronic devices. Accordingly, research and development on touch sensors that can be applied to various environments and enable accurate touch recognition have been actively conducted. are losing

For example, in the case of electronic devices having touch-type displays, ultra-thin flexible displays that achieve ultra-light weight, low power consumption, and improved portability have been attracting attention as next-generation displays, and development of touch sensors applicable to such displays has been required. A flexible (flexible) display means a display manufactured on a flexible substrate that can be bent, bent, or rolled without loss of characteristics, and technology development is in progress in the form of flexible LCD, flexible OLED, and electronic paper.

An example of a flexible LCD is described in Korean Patent Publication No. 10-2013-0106664. The invention disclosed in exemplified Korean Patent Publication No. 10-2013-0106664 relates to a 'method for manufacturing a flexible liquid crystal display', comprising the steps of attaching a first film layer on a first substrate, the first film layer Forming a thin film transistor (TFT) array on the first substrate; attaching a second film layer on the second substrate; forming a color filter array on the second film layer; forming a liquid crystal layer on the thin film transistor array; bonding the first substrate and the second substrate so that the liquid crystal layer of the first substrate and the color filter array of the second substrate face each other; and separating the second substrate from the first film layer and the second film layer, respectively.

That is, the illustrative published invention manufactures a film type thin film transistor array by attaching a film layer on a first substrate to form a thin film transistor array, and a color filter array formed on a second film layer on a second substrate. This is a technology for manufacturing a liquid crystal display device by bonding with the film type thin film transistor array.

However, since a film layer is attached on the first substrate and a thin film transistor array is formed on the film layer, a high-temperature process for forming the thin film transistor array (eg, inorganic insulating layer, semiconductor layer (active layer, ohmic contact layer) deposition) ), there is a problem that the film layer may be deformed.

In addition, in the above-described published application invention, a film layer is attached on a substrate, and these film layer attachment processes are also factors that reduce product production yield.

Republic of Korea Patent Publication No. 10-2013-0106664

Therefore, the present invention is an invention invented to solve the above-mentioned problems, and the main object of the present invention is a film-type thin film that can be manufactured without using a film layer that is highly deformable in a high-temperature process for forming a thin film transistor array. To provide a transistor array and a manufacturing method thereof,

Furthermore, another object of the present invention is to provide a film type thin film transistor array and a manufacturing method thereof capable of improving production yield compared to the conventional method of manufacturing a thin film transistor array by attaching a film layer on a substrate.

Another object of the present invention is to provide a flexible liquid crystal display device including a film type thin film transistor array that can be manufactured without using a film layer attached to a substrate and a method for manufacturing the flexible liquid crystal display device,

The present invention provides a flexible liquid crystal display device including a film-type thin film transistor array in which product components are not deformed even at a high temperature during the manufacturing process, but a flexible liquid crystal display device in which a color filter is integrated together and a manufacturing method thereof. for a different purpose.

A method for manufacturing a film type thin film transistor array according to an embodiment of the present invention for solving the above technical problem is,

forming a separation layer on the substrate;

forming a capping layer on the separation layer;

forming a thin film transistor array on the capping layer;

Bonding a protective film having an adhesive layer applied on one side of the thin film transistor array;

separating the substrate from the separation layer;

It is characterized in that it includes the step of adhering a base film to one surface of the separation layer from which the substrate is separated.

Furthermore, another feature of the capping layer is that it is formed of an inorganic insulating layer material.

A method for manufacturing a flexible liquid crystal display in which a film type thin film transistor array and a color filter array are integrated according to an embodiment of the present invention

Forming a separation layer on the first substrate;

forming a capping layer on the separation layer;

forming a thin film transistor array on the capping layer;

Bonding a protective film having an adhesive layer applied on one side of the thin film transistor array;

separating the first substrate from the separation layer;

Adhering a first base film to one surface of the separation layer from which the first substrate is separated;

forming a separation layer on a second substrate and then forming a color filter array on the separation layer;

Adhering a second base film to one surface of the separation layer from which the second substrate is separated;

Forming a liquid crystal layer on the thin film transistor array on the first base film from which the protective film is removed;

and bonding the first base film and the second base film so that the liquid crystal layer formed on the first base film and the color filter array formed on the second base film face each other. .

Furthermore, before forming the liquid crystal layer on the thin film transistor array on the first base film,

Forming an alignment film on the thin film transistor array on the first base film and the color filter array on the second base film, respectively, and imparting orientation to each of the alignment films; and

Another feature of the capping layer is that it is formed of an inorganic insulating layer material.

According to the above-described problem solving means, since the thin film transistor array according to the embodiment of the present invention is formed on a glass substrate, even if a high-temperature process for forming a semiconductor layer is applied, a base material necessary for forming a semiconductor layer It has the advantage of being able to manufacture a reliable film-type thin film transistor array without fear of deformation of

Furthermore, since the present invention does not use a separate film layer for forming a semiconductor layer, there is also an advantage in that the production yield can be improved compared to the disclosed invention exemplified in the prior art literature.

In addition, the present invention is a useful invention capable of manufacturing a flexible liquid crystal display in which a film type thin film transistor array and a color filter are integrated without deformation of product components even at a high temperature during the manufacturing process.

1 is an exemplary view of the cross-sectional structure of a film type thin film transistor array according to an embodiment of the present invention.
2 is an exemplary flow diagram of a manufacturing process of a film type thin film transistor array according to an embodiment of the present invention.
3 and 4 are cross-sectional views of intermediate products for each manufacturing process of a film type thin film transistor array according to an embodiment of the present invention.
5 is an exemplary cross-sectional structure view of a thin film transistor array module and a color filter array module constituting a flexible liquid crystal display according to an embodiment of the present invention.
FIG. 6 is an exemplary view of a bonding state of a flexible liquid crystal display device manufactured by bonding the thin film transistor array module and the color filter array module shown in FIG. 5;

Specific structural or functional descriptions of the embodiments according to the concept of the present invention disclosed in this specification are only illustrated for the purpose of explaining the embodiments according to the concept of the present invention, and the embodiments according to the concept of the present invention It can be embodied in various forms and is not limited to the embodiments described herein.

In addition, since embodiments according to the concept of the present invention can be made with various changes and have various forms, the embodiments will be illustrated in the drawings and described in detail in this specification. However, this is not intended to limit the embodiments according to the concept of the present invention to specific disclosure forms, and includes all changes, equivalents, or substitutes included in the spirit and technical scope of the present invention.

In addition, in describing the embodiments of the present invention, if it is determined that specific descriptions such as known functions or configurations (for example, the shape of an electrode pattern, a method of forming an electrode pattern, etc.) may unnecessarily obscure the gist of the present invention, A detailed description thereof will be omitted.

[Examples of Film-type Thin Film Transistor Array and Manufacturing Method thereof]

First, FIG. 1 illustrates a cross-sectional structural diagram of a film type thin film transistor array according to an embodiment of the present invention.

As shown in FIG. 1, the film type thin film transistor array according to an embodiment of the present invention does not use a film layer to prevent deformation of the film due to a high temperature process, but forms a separation layer and a capping layer on a glass substrate to form a thin film. It is characterized in that it is manufactured by adhering the base film 100 after forming the transistor array.

That is, as shown in FIG. 1, the film type thin film transistor array according to the embodiment of the present invention,

A separation layer 120 formed on the base film 100,

A capping layer 140 formed on the separation layer 120;

A thin film transistor array (TFT) 150 formed on the capping layer 140;

A protective film 160 bonded to the thin film transistor array (TFT, 150) is included.

As a deformable embodiment, a protective layer 130 may be further formed between the separation layer 120 and the capping layer 140 .

Another feature of the capping layer 140 is that it is formed of an inorganic insulating layer material (SiNx, SiOx, etc.).

Hereinafter, a manufacturing method of a film type thin film transistor array that can be manufactured without using a film layer will be described in more detail with reference to FIGS. 2 to 4 .

2 illustrates a flowchart of a manufacturing process of a film type thin film transistor array according to an embodiment of the present invention, and FIGS. 3 and 4 are cross-sectional views of intermediate products for each manufacturing process of a film type thin film transistor array according to an embodiment of the present invention. are exemplified, respectively.

Referring to FIG. 2 , first, a polymer organic film is coated on a carrier substrate, that is, a glass substrate to form a separation layer 120 as shown in FIG. 3 (a) (step S10). The separation layer 120 is a layer formed to separate the thin film transistor array (TFT, 150) formed on the glass substrate from the glass substrate, and the separation layer 120 is formed on the thin film transistor array (TFT, 150) It can also perform the function of wrapping and covering and insulating it. As a method of applying the separation layer 120, a known coating method such as spin coating, die coating, or spray coating may be used.

The peel force of the separation layer 120 is not particularly limited, but may be, for example, 0.01 to 1 N/25 mm, preferably 0.01 to 0.2 N/25 mm. When the above range is satisfied, it can be easily peeled from the glass substrate without residue, and curl and cracks caused by tension generated during peeling can be reduced.

The thickness of the separation layer 120 is not particularly limited, but may be, for example, 10 to 1,000 nm, preferably 50 to 500 nm. When the above range is satisfied, peel force is stable and a uniform pattern can be formed.

Materials of the separation layer 120 include polyimide-based polymers, polyvinyl alcohol-based polymers, polyamic acid-based polymers, polyamide-based polymers, polyethylene-based polymers, polystyrene-based polymers, polynorbornene-based polymers, and phenylmaleimide copolymers. It may be made of a polymer such as a copolymer)-based polymer or a polyazobenzene-based polymer, and these may be used alone or in combination of two or more.

On the other hand, it is preferable to select and use a material having heat resistance that does not deform even at high temperatures, that is, can maintain flatness, so that the glass substrate can withstand the process temperature at the time of forming the thin film transistor array.

As the curing process for forming the separation layer 120, thermal curing or UV curing may be used alone or a combination of thermal curing and UV curing may be used.

After the separation layer forming step (step S10), as shown in (b) of FIG. 3, a protective layer 130 may be additionally formed on the separation layer 120 (step S20). This protective layer 130 is an optional component that can be omitted if necessary.

The protective layer 130 serves to protect the thin film transistor array layer by covering the thin film transistor array (TFT) 150 to be described later together with the separation layer 120 . The protective layer 130 may be formed to cover at least a portion of a side surface of the separation layer 120 . The side of the separation layer 120 is an edge side wall of the separation layer 130 . In terms of completely blocking side exposure of the separation layer 120, it is preferable to configure the protective layer 130 to cover the entire side surface of the separation layer 120.

When the separation layer 120 or the protective layer 130 is formed, as shown in (c) of FIG. 3, a capping layer 140 is formed on the separation layer 120 or the protective layer 130. To form (step S30). The capping layer 140 is formed by depositing a composition for forming a capping layer, preferably an inorganic insulating layer material such as SiNx, SiOx, etc., to cover the sides of the separation layer 120 and the protective layer 130. It is desirable to do

When the capping layer 140 is formed on the separation layer 120 or the protective layer 130, the thin film is sequentially formed on the capping layer 140 as shown in (d), (e) and FIG. A transistor array (TFT) 150 is formed (step S40).

More specifically, the thin film transistor array (TFT, 150) includes a gate layer (gate electrode metal layer, 151), a gate insulating layer 153, a semiconductor layer (155, active layer and ohmic contact layer), S / D layer (source / A drain electrode metal layer 157), a passivation layer 158, and a pixel electrode layer (ITO pixel electrode layer, 159) may be included.

As shown in (d) of FIG. 3, the gate layer 151 may be formed of a conductive material such as Mg, Al, Ni, Au, etc., and as shown in (e) of FIG. 3, a gate insulating layer covering the gate layer 151. 153 may be formed of an insulating material layer such as a silicon oxide layer or a silicon nitride layer.

As shown in (a) of FIG. 4 , an active layer, which is a component of the semiconductor layer 155 , is formed on the gate insulating layer 153 . This active layer overlaps with the gate layer 151 to form a channel. A channel is formed between the source/drain electrodes of the S/D layer 157 on the gate layer 151 . As the active layer, a polysilicon layer or an amorphous silicon layer may be formed.

An ohmic contact layer constituting the semiconductor layer 155 is formed on the active layer except for the channel portion for ohmic contact with the source/drain electrodes. The source/drain electrodes of the S/D layer 157 are formed to face each other with the channel portion interposed therebetween.

As shown in FIG. 4(c), a passivation layer 158 is formed on the S/D layer 157, and a pixel electrode layer 159 connected to the source/drain electrodes is formed as shown in FIG. 4(d). The pixel electrode is formed using an indium tin oxide (ITO) electrode. The protective layer 158 may also be formed of an inorganic insulating material or an organic insulating material. This thin film transistor array is just one example, and it will be apparent to those skilled in the art that it can be formed in various known methods.

When the thin film transistor array (TFT) 150 is formed on the capping layer 140 in the same manner as described above, the protective film (160 in FIG. 1 ) coated with an adhesive layer is bonded to the pixel electrode layer 159 (S50). step). The protective film 160 may be a transparent optical film or a polarizing plate. The transparent optical film may be surface-treated if necessary. Examples of such surface treatment include dry treatment such as plasma treatment, corona treatment, and primer treatment, chemical treatment such as alkali treatment including saponification treatment, and the like. Also, the transparent optical film may be an isotropic film, a retardation film, or a protective film.

When the protective film 160 is bonded through the transfer process, the glass substrate serving as the carrier substrate and the separation layer 120 are separated (Step S60). That is, it can be separated from the organic substrate by using a method of peeling the separation layer 120 on which the thin film transistor array (TFT, 150) is formed. The peeling method includes a lift-off or peel-off method, but is not limited thereto.

After separating the glass substrate from the separation layer 120, as shown in FIG. 1, the substrate layer having the adhesive 110 applied on one surface, that is, the substrate film 100 is adhered (step S70), as shown in FIG. A film type thin film transistor array having a cross-sectional structure as described above can be manufactured. Such a film type thin film transistor array can be used in a liquid crystal display device. Of course, the protective film 160 located on the top of the film type thin film transistor array shown in FIG. 1 may be removed.

According to the embodiment of the present invention as described above, since the thin film transistor array of the present invention is formed on a glass substrate, even if a high-temperature process for forming the semiconductor layer is applied, there is concern about deformation of the base material for forming the semiconductor layer. There is no reliable film type thin film transistor array can be manufactured.

In addition, since the present invention does not use a separate film layer for forming a semiconductor layer, there is an advantage in that the production yield can be improved compared to the disclosed inventions exemplified in prior art literature.

Meanwhile, from the manufacturer's point of view, the separation layer 120 is formed on the glass substrate according to the sales policy, the capping layer 140 is formed on the separation layer 120, and the thin film transistor array is again on the capping layer 140. After forming (150), the thin film transistor array in the form of bonding the protective film 160 on the thin film transistor array 150 may be sold. A protective layer may be further formed between the separation layer 120 and the capping layer 140 of the film transistor array having this structure, and the capping layer 140 is preferably formed of an inorganic insulating layer material.

Hereinafter, a flexible liquid crystal display device using a film-type thin film transistor array that can be manufactured by the above-described manufacturing method and a method for manufacturing the liquid crystal display device will be described, but a flexible liquid crystal in which the film-type thin film transistor array and the color filter array are integrated A display device and a manufacturing method thereof will be described.

In the following embodiment, to avoid redundant description, the manufacturing method of the film-type thin film transistor array described in FIG. 2 will be omitted, and the film-type thin film transistor array manufactured by FIG. 2 is newly defined as a thin film transistor array module, An embodiment will be described by defining a color filter array bonded to the thin film transistor array module as a color filter array module.

[Examples of a flexible liquid crystal display in which a thin film transistor array module and a color filter array module are integrated and a manufacturing method thereof]

First, FIG. 5 illustrates a cross-sectional structure diagram of a thin film transistor array module (a) and a color filter array module (b) constituting a flexible liquid crystal display according to an embodiment of the present invention.

FIG. 6 illustrates a bonding state (c) of a flexible liquid crystal display manufactured by bonding the thin film transistor array module (a) and the color filter array module (b) shown in FIG. 5 .

A flexible liquid crystal display in which a thin film transistor array module and a color filter array module are integrated according to an embodiment of the present invention results in a separation layer 120 above the first base film 100 as shown in (c) of FIG. ), a thin film transistor array module (TFTAM) in which a capping layer 140 and a thin film transistor array (TFT, 150) are sequentially formed,

A color filter array module (CFAM) in which the separation layer 220 and the color filter array are sequentially formed on the second base film 200;

The thin film transistor array module (TFTAM) and the color filter array module (CFAM) are bonded so that the thin film transistor array and the color filter array face each other, and a liquid crystal layer 180 is formed on a bonding surface.

Between the separation layer 120 and the capping layer 140 on the first base film 100 constituting the thin film transistor array module (TFTAM), as shown in (a) of FIG. 5, a protective layer 130 is further formed. can be formed Of course, a protective layer may be further formed between the separation layer 220 on the second base film 200 constituting the color filter array module (CFAM) and the color filter array (CF, 230).

Since the method of manufacturing the thin film transistor array module (TFTAM) shown in (a) of FIG. 5 has already been described with reference to FIG. 2, it will be omitted below. However, in order to manufacture a flexible liquid crystal display using the thin film transistor array module (TFTAM) manufactured by the method described in FIG. In order to prevent possible distortion of liquid crystal, as shown in FIG. It is preferable to arrange the liquid crystal layer 180 in a certain direction.

For convenience of description, FIG. 5(a) shows a state in which the alignment film 170 and the liquid crystal layer 180 are formed on the thin film transistor array module (TFTAM), and in FIG. 5(b), the color filter array module ( CFAM) is shown up to the state in which the alignment layer 250 is formed. When these two modules (TFTAM, CFAM) are bonded together, a flexible liquid crystal display device in which the film type thin film transistor array and the color filter array shown in FIG. 6(c) are integrated can be manufactured. This will be described later with reference to FIG. 6 .

Since the method of manufacturing the thin film transistor array module (TFTAM) has already been described, the process of forming the color filter array (CF) on the base film 200 will be further described with reference to FIG. 5(b),

First, the separation layer 220 is formed on the second substrate (glass substrate) corresponding to the carrier substrate. The separation layer 220 may be formed in the same manner as the method described in FIG. 2 . Of course, a protective layer may be further formed on the separation layer 220 in the same manner as described in FIG. 2 . The second substrate, which is the glass substrate, is separated in a post process, and the base film 200 to which the adhesive 210 is applied is attached to the position of the second substrate in a post process.

Then, a color filter array (CF, 230) is formed on the separation layer 220 or the protective layer. The color filter array 230 may include a light blocking layer, color filter (R, G, and B) layers, a planarization layer, and an ITO common electrode 240 . The light blocking layers are spaced apart from each other and formed in a matrix form, and are referred to as black matrix layers. Color filter (R, G, B) layers are formed between the light blocking layers.

In this way, when the light blocking layer constituting the color filter array, the color filter (R, G, B) layer planarization layer and the ITO common electrode 240 are formed on the separation layer 220, the second substrate (glass substrate) It is separated from the separation layer 220, and the second base film 200 is adhered to one side of the separation layer 220 to manufacture a color filter array module (CFAM).

When a thin film transistor array module (TFTAM) and a color filter array module (CFAM) are manufactured using glass substrates, which are the first and second substrates, respectively, as shown in (a) and (b) of FIG. 5 and FIG. 6, Alignment films 170 and 250 are formed on each of the modules (TFTAM, CFAM), but orientation is imparted to prevent distortion of liquid crystals that may occur during flexible implementation. An alignment film patterning process for imparting orientation may use a method disclosed in Application No. 10-2010-0025931.

After forming an alignment film on each module (TFTAM, CFAM), a liquid crystal layer 180 is formed on the thin film transistor array (TFT) on the top of the thin film transistor array module (TFTAM), and then formed on the top of the thin film transistor array module (TFTAM) The first base film 100 and the second base film (that is, the thin film transistor array module and the color filter array) such that the liquid crystal layer 180 and the color filter array (CF) formed on the color filter array module (CFAM) face each other. module) is joined as shown in FIG. 6(c).

As a result, as shown in (c) of FIG. 6, a flexible liquid crystal display device in which a film type thin film transistor array and a color filter array are integrated can be made.

Therefore, the present invention manufactures a flexible liquid crystal display device including a film-type thin film transistor array in which product components are not deformed even at a high temperature during the manufacturing process, but a flexible liquid crystal display device in which color filters are integrated together can be manufactured It is a useful invention.

As a modified embodiment of the present invention, a flexible liquid crystal display device may be manufactured by bonding an externally manufactured color filter array module to a film type thin film transistor array module according to an embodiment of the present invention.

That is, in a manner similar to the method shown in FIG. 2 , the separation layer 120 is formed on the first substrate (glass substrate), and the capping layer 140 is formed on the separation layer 120 . As described above, a protective layer 130 may be further formed between the isolation layer 120 and the capping layer 140 .

After the capping layer 140 is formed, the thin film transistor array 150 is formed thereon, and then the protective film 160 coated with an adhesive layer is bonded to the thin film transistor array 150 . Thereafter, the first substrate is separated from the separation layer 120, and the first base film 100 is adhered to one surface of the separation layer 120 from which the first substrate is separated.

Subsequently, after forming a liquid crystal layer on the thin film transistor array 150 above the first base film 100, a color filter array module having a color filter array formed on the base layer is bonded to the liquid crystal layer, The liquid crystal layer and the color filter array formed in the color filter array module are bonded to face each other.

Even through this method, a flexible liquid crystal display in which a thin film transistor array module and a color filter array module are integrated can be normally manufactured.

For reference, the base layer of the color filter array module may be any one of a flexible base film and a non-flexible substrate.

The above has been described with reference to the embodiments shown in the drawings, but this is only exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical scope of protection of the present invention should be defined only by the appended claims.

Claims (34)

Forming a separation layer having a peel force of 0.01 to 1 N / 25 mm on the substrate;
forming a capping layer on the isolation layer;
forming a thin film transistor array on the capping layer;
Bonding a protective film having a pressure-sensitive adhesive layer applied on one side of the thin film transistor array;
The separation layer has a thickness of 10 nm to 1,000 nm,
The capping layer is a film type thin film transistor array manufacturing method, characterized in that formed of an inorganic insulating layer material. The method according to claim 1, Separating the substrate from the separation layer;
A film type thin film transistor array manufacturing method further comprising the step of adhering a base film to one surface of the separation layer from which the substrate is separated. The method according to claim 1 or 2, further comprising forming a protective layer between the separation layer and the capping layer. delete The method according to claim 2, further comprising removing the protective film. delete a separation layer formed on the substrate and having a peel force of 0.01 to 1 N/25 mm;
a capping layer formed on the separation layer;
a thin film transistor array formed on the capping layer;
Including; a protective film bonded on the thin film transistor array,
The separation layer has a thickness of 10 nm to 1,000 nm,
The capping layer is a film type thin film transistor array, characterized in that formed of an inorganic insulating layer material. The film type thin film transistor array of claim 7 , further comprising a protective layer formed between the separation layer and the capping layer. delete The film type thin film transistor array according to claim 7 or 8, characterized in that the film type thin film transistor array is for a liquid crystal display device. forming a separation layer having a peel force of 0.01 to 1 N/25 mm and a thickness of 10 nm to 1,000 nm on a first substrate;
forming a capping layer on the isolation layer;
forming a thin film transistor array on the capping layer;
bonding a protective film having a pressure-sensitive adhesive layer coated on one side of the thin film transistor array;
separating the first substrate from the separation layer;
adhering a first base film to one surface of the separation layer from which the first substrate is separated;
forming a separation layer on a second substrate and then forming a color filter array on the separation layer;
adhering a second base film to one surface of the separation layer from which the second substrate is separated;
forming a liquid crystal layer on the thin film transistor array on top of the first base film from which the protective film is removed;
Bonding the first base film and the second base film so that the liquid crystal layer formed on the first base film and the color filter array formed on the second base film face each other,
The method of manufacturing a flexible liquid crystal display device, characterized in that the capping layer is formed of an inorganic insulating layer material. The method of claim 11 , further comprising forming a protective layer between the separation layer formed on the first substrate and the capping layer, and forming a protective layer between the separation layer formed on the second substrate and the color filter array. A method for manufacturing a flexible liquid crystal display device further comprising one or more of the steps. The method according to claim 11 or claim 12, before forming the liquid crystal layer on the thin film transistor array on the first base film,
Forming an alignment film on the thin film transistor array on the first base film and on the color filter array on the second base film, respectively, and imparting orientation to each alignment film; flexible characterized in that it further comprises a. A method for manufacturing a liquid crystal display device. delete delete forming a separation layer having a peel force of 0.01 to 1 N/25 mm and a thickness of 10 nm to 1,000 nm on a first substrate;
forming a capping layer on the isolation layer;
forming a thin film transistor array on the capping layer;
bonding a protective film having a pressure-sensitive adhesive layer coated on one side of the thin film transistor array;
separating the first substrate from the separation layer;
adhering a first base film to one surface of the separation layer from which the first substrate is separated;
forming a liquid crystal layer on the thin film transistor array above the first base film;
bonding a color filter array module having a color filter array formed on the base layer onto the liquid crystal layer so that the liquid crystal layer and the color filter array formed on the color filter array module face each other; and ,
The method of manufacturing a flexible liquid crystal display device, characterized in that the capping layer is formed of an inorganic insulating layer material. The method of claim 16 , further comprising forming a protective layer between the separation layer formed on the first substrate and the capping layer. The method according to claim 16 or claim 17, before forming the liquid crystal layer on the thin film transistor array on the first base film,
Forming an alignment film on the thin film transistor array on the first base film, and imparting orientation to the alignment film; manufacturing method of a flexible liquid crystal display device characterized in that it further comprises. delete The method of manufacturing a flexible liquid crystal display device according to claim 16 or claim 17, wherein the base layer of the color filter array module is any one of a flexible base film and a non-flexible substrate. a separation layer formed on the base film and having a peel force of 0.01 to 1 N/25 mm;
a capping layer formed on the separation layer;
a thin film transistor array formed on the capping layer;
Including; a protective film bonded on the thin film transistor array,
The separation layer has a thickness of 10 nm to 1,000 nm,
The capping layer is a film type thin film transistor array, characterized in that formed of an inorganic insulating layer material. The film type thin film transistor array of claim 21 , further comprising a protective layer formed between the separation layer and the capping layer. delete The film-type thin-film transistor array according to claim 21 or 22, characterized in that the film-type thin film transistor array is for a liquid crystal display device. A thin film transistor array module in which a separation layer having a peel force of 0.01 to 1 N/25 mm and a thickness of 10 nm to 1,000 nm, a capping layer formed of an inorganic insulating layer material, and a thin film transistor array are sequentially formed on the first base film;
a color filter array module in which a separation layer and a color filter array are sequentially formed on the second base film;
The thin film transistor array module and the color filter array module are bonded to each other so that the thin film transistor array and the color filter array face each other, and a liquid crystal layer formed on a bonding surface. 26. The flexible liquid crystal display of claim 25, wherein a protective layer is further formed between the separation layer and the capping layer on the first base film and between the separation layer on the second base film and the color filter array. [27] The flexible liquid crystal display according to claim 25 or 26, wherein an alignment layer is further formed on at least one of the thin film transistor array of the thin film transistor array module and the color filter array of the color filter array module. [Claim 28] The flexible liquid crystal display of claim 27, wherein the alignment layer is provided with orientation so that the liquid crystals are aligned in a predetermined direction. delete A thin film transistor array module in which a separation layer having a peel force of 0.01 to 1 N/25 mm and a thickness of 10 nm to 1,000 nm, a capping layer formed of an inorganic insulating layer material, and a thin film transistor array are sequentially formed on the first base film;
a color filter array module in which a color filter array is formed on the base layer;
The thin film transistor array module and the color filter array module are bonded to each other so that the thin film transistor array and the color filter array face each other, and a liquid crystal layer formed on a bonding surface. 31. The flexible liquid crystal display of claim 30, wherein an alignment layer is further formed on at least one of the thin film transistor array of the thin film transistor array module and the color filter array of the color filter array module. [Claim 32] The flexible liquid crystal display of claim 31, wherein the alignment layer is provided with orientation so that the liquid crystals are aligned in a certain direction. delete 31. The flexible liquid crystal display device of claim 30, wherein the base layer is any one of a flexible base film and a non-flexible substrate.

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