KR20170112251A - Thin film transistor array for display device and method for fabricating the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film-type thin film transistor array usable in a flexible liquid crystal display, a flexible liquid crystal display including the same, and a method of manufacturing the same, Even if a high temperature process for forming a semiconductor layer is applied, there is no risk of deformation of the base material necessary for forming a semiconductor layer, and thus a reliable film-type thin film transistor array and a flexible liquid crystal display device including the same can be manufactured There is an advantage.

Description

TECHNICAL FIELD [0001] The present invention relates to a film-type thin film transistor array, a flexible liquid crystal display including the same, and a method of manufacturing a flexible liquid crystal display device.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible liquid crystal display, and more particularly, to a film-type thin film transistor array usable in a flexible liquid crystal display, a flexible liquid crystal display including the same, and a manufacturing method thereof.

There have been attempts to introduce a touch input method into a wider variety of electronic devices while receiving a touch input method as a next generation input method. Accordingly, research and development of a touch sensor which can be applied to various environments and can accurately recognize a touch are actively carried out ought.

For example, in the case of an electronic device having a touch-type display, an ultra-thin flexible display which achieves light weight, low power and improved portability has been attracting attention as a next generation display, and development of a touch sensor applicable to such a display has been required. Flexible display means a display made on a flexible substrate that can bend, bend or twist without loss of characteristics, and technology development is under way in the form of flexible LCD, flexible OLED and electronic paper.

An example of a flexible LCD is disclosed in Korean Patent Laid-Open Publication No. 10-2013-0106664. The invention disclosed in Korean Patent Laid-Open Publication No. 10-2013-0106664 is a method of manufacturing a flexible liquid crystal display device, comprising: attaching a first film layer on a first substrate; Comprising the steps of: forming a thin film transistor (TFT) array on a first substrate; depositing a second film layer on a second substrate; forming a color filter array on the second film layer; Forming a liquid crystal layer on the thin film transistor array, attaching the first substrate and the second substrate so that the liquid crystal layer of the first substrate and the color filter array of the second substrate face each other, And separating the second substrate from the first film layer and the second film layer, respectively.

That is, the illustrated disclosed application discloses a method of manufacturing a film-type thin film transistor array in which a film layer is attached to a first substrate to form a thin film transistor array, and a color filter array formed on the second film layer on the second substrate Type thin film transistor array and a film-type thin film transistor array.

However, in order to deposit a film layer on the first substrate and form a thin film transistor array on the film layer, a high temperature process for forming a thin film transistor array (for example, an inorganic insulating layer, a semiconductor layer (active layer, ohmic contact layer) There is a problem that the film layer may be deformed.

In addition, in the above-mentioned filed application of the present invention, the film layer is adhered to the substrate, and the process of adhering the film layer deteriorates the yield of product production.

Korean Patent Publication No. 10-2013-0106664

Accordingly, it is an object of the present invention to provide a film-type thin film which can be manufactured without using a film layer having a high possibility of being deformed in a high-temperature process for forming a thin film transistor array A transistor array and a manufacturing method thereof are provided,

It is still another object of the present invention to provide a film-type thin film transistor array and a method of manufacturing the same that can improve the production yield as compared with the existing method of manufacturing a thin film transistor array by attaching a film layer on a substrate.

It is another object of the present invention to provide a flexible liquid crystal display device including a film-type thin film transistor array which can be manufactured without using a film layer adhered on a substrate, and a method of manufacturing the flexible liquid crystal display device.

The present invention provides a flexible liquid crystal display device including a film-type thin film transistor array which is free from deformation of product components even during a high-temperature manufacturing process, and a flexible liquid crystal display device in which color filters are integrated together, and a manufacturing method thereof For other purposes.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film transistor array,

Forming a separation layer on the substrate,

Forming a capping layer on the isolation layer,

Forming a thin film transistor array on the capping layer;

Bonding a protective film coated on one surface with a pressure-sensitive adhesive layer on the thin film transistor array;

Separating the substrate from the isolation layer,

And bonding the base film to one surface of the separation layer from which the substrate is separated.

Further, the capping layer is formed of an inorganic insulating layer material.

A method of manufacturing a flexible liquid crystal display device in which a film-type thin film transistor array and a color filter array according to an embodiment of the present invention are integrated

Forming a separation layer on the first substrate,

Forming a capping layer on the isolation layer,

Forming a thin film transistor array on the capping layer;

Bonding a protective film coated on one surface with a pressure-sensitive adhesive layer on the thin film transistor array;

Separating the first substrate from the isolation layer,

Bonding the first base film to one side of the separation layer from which the first substrate is separated,

Forming a color filter array on the isolation layer after forming a separation layer on the second substrate,

Bonding the second base film to one side of the separation layer from which the second substrate is separated,

Forming a liquid crystal layer on the thin film transistor array on the first base film from which the protective film has been removed;

And bonding the first base film and the second base film so that the liquid crystal layer formed on the first base film and the color filter array formed on the second base film face each other .

Further, before forming the liquid crystal layer on the thin film transistor array on the first base film,

And forming an alignment film on each of the thin film transistor array on the first base film and the color filter array on the second base film to give the orientation films to the respective alignment films. In addition,

Wherein the capping layer is formed of an inorganic insulating layer material.

The thin film transistor array according to the embodiment of the present invention has a thin film transistor array formed on a glass substrate. Therefore, even if a high temperature process for forming a semiconductor layer is applied, There is no fear of deformation of the film-type thin film transistor array, and thus a reliable film-type thin film transistor array can be manufactured.

Furthermore, since the present invention does not use a separate film layer for forming a semiconductor layer, there is an advantage that the production yield can be improved as compared with the disclosed invention exemplified in the prior art document.

In addition, the present invention is a useful invention capable of manufacturing a flexible liquid crystal display device in which a film-type thin film transistor array and a color filter are integrated together in a high-temperature process in a manufacturing process without any deformation of product components.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an exemplary cross-sectional view of a film-type thin film transistor array according to an embodiment of the present invention; Fig.
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a thin-
FIG. 3 and FIG. 4 are cross-sectional exemplary views of an intermediate product for each manufacturing process of a film-type thin film transistor array according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a cross-sectional structure of a thin film transistor array module and a color filter array module constituting a flexible liquid crystal display device according to an embodiment of the present invention; FIG.
FIG. 6 is an exemplary view showing a bonding state of a flexible liquid crystal display device manufactured by bonding the thin film transistor array module and the color filter array module shown in FIG. 5;

It is to be understood that the specific structural or functional description of embodiments of the present invention disclosed herein is for illustrative purposes only and is not intended to limit the scope of the inventive concept But may be embodied in many different forms and is not limited to the embodiments set forth herein.

In addition, the embodiments according to the concept of the present invention can make various changes and have various forms, so that the embodiments are illustrated in the drawings and described in detail herein. It should be understood, however, that it is not intended to limit the embodiments according to the concepts of the present invention to the particular forms disclosed, but includes all modifications, equivalents, or alternatives falling within the spirit and scope of the invention.

In addition, in the description of the embodiments of the present invention, when it is determined that a specific description such as a related known function or configuration (for example, a shape of an electrode pattern, a method of forming an electrode pattern, etc.) may unnecessarily obscure the gist of the present invention A detailed description thereof will be omitted.

[Embodiment of Film-type Thin Film Transistor Array and Manufacturing Method Thereof]

1 is a cross-sectional structural view of a film-type thin film transistor array according to an embodiment of the present invention.

As shown in FIG. 1, the film-type thin film transistor array according to an embodiment of the present invention includes a separation layer and a capping layer formed on a glass substrate, without using a film layer to prevent deformation of the film due to a high- And then the base film 100 is bonded after the transistor array is formed.

That is, the film-type thin film transistor array according to the embodiment of the present invention, as shown in FIG. 1,

A separation layer 120 formed on the base film 100,

A capping layer 140 formed on the separation layer 120,

A thin film transistor array (TFT) 150 formed on the capping layer 140,

And a protective film 160 bonded on the thin film transistor array (TFT) 150.

As a deformable embodiment, a protective layer 130 may be further formed between the separation layer 120 and the capping layer 140.

The capping layer 140 is formed of an inorganic insulating layer material (SiNx, SiOx, or the like).

2 to 4, a method of manufacturing a film-type thin film transistor array which can be manufactured without using a film layer will be described in more detail.

FIG. 2 illustrates a flow diagram of a process for manufacturing a film-type thin film transistor array according to an embodiment of the present invention, and FIGS. 3 and 4 are sectional views of an intermediate product according to the manufacturing process of the film- Respectively.

Referring to FIG. 2, first, a polymer organic film is coated on a carrier substrate, that is, a glass substrate to form a separation layer 120 as shown in FIG. 3 (a). The isolation layer 120 is formed to separate a thin film transistor array (TFT) 150 formed on a glass substrate from a glass substrate. The isolation layer 120 includes a thin film transistor array (TFT) And a function of insulating and inserting it can be performed. As a method of applying the separation layer 120, a known coating method such as spin coating, die coating, spray coating and the like can be used.

The peeling force of the separation layer 120 is not particularly limited, but may be, for example, 0.01 to 1 N / 25 mm, preferably 0.01 to 0.2 N / 25 mm. When the above range is satisfied, the glass substrate can be easily peeled off without residue, and curl and crack due to the tensile force generated at peeling can be reduced.

The thickness of the separation layer 120 is not particularly limited, but may be, for example, 10 to 1,000 nm, preferably 50 to 500 nm. When the above range is satisfied, the peeling force can be stabilized and a uniform pattern can be formed.

As the material of the separation layer 120, a polyimide polymer, a polyvinyl alcohol polymer, a polyamic acid polymer, a polyamide polymer, a polyethylene polymer, a polystyrene polymer, a polynorbornene polymer, a phenylmaleimide copolymer copolymer type polymers, and polyazobenzene type polymers, and they may be used alone or in combination of two or more.

On the other hand, it is preferable to use a material having heat resistance that can not be deformed even at a high temperature, that is, it can maintain flatness, so that the glass substrate can withstand the process temperature at the time of forming the thin film transistor array.

The curing process for forming the separation layer 120 may be performed using heat curing or UV curing alone, or a combination of thermal curing and UV curing.

After the separation layer formation step (S10), a protective layer 130 may be additionally formed on the separation layer 120 (S20) as shown in FIG. 3 (b). This protective layer 130 is an optional component that can be omitted if necessary.

The protective layer 130 functions to protect the thin film transistor array layer by covering the thin film transistor array (TFT) 150 to be described later together with the separation layer 120. The protective layer 130 may be formed to cover at least a part of the side surface of the isolation layer 120. The side surface of the separation layer 120 is the sidewall of the separation layer 130. It is preferable that the protective layer 130 covers all the side surfaces of the separation layer 120 in terms of completely shielding the side surface of the separation layer 120 from being exposed.

The capping layer 140 may be formed on the isolation layer 120 or on the protection layer 130 as shown in FIG. 3 (c) (Step S30). The capping layer 140 is formed by depositing an inorganic insulating layer material such as a composition for forming a capping layer, preferably SiNx, SiOx, etc., and forming a capping layer 140 to cover the separation layer 120 and the side of the protection layer 130 .

When the capping layer 140 is formed on the separation layer 120 or the protection layer 130, the capping layer 140 is sequentially formed on the capping layer 140 as shown in FIGS. 3 (d), 3 (e) Thereby forming a transistor array (TFT) 150 (step S40).

More specifically, the thin film transistor array (TFT) 150 includes a gate layer (gate electrode metal layer 151), a gate insulating layer 153, a semiconductor layer 155 (an active layer and an ohmic contact layer) A drain electrode metal layer 157, a passivation layer 158, and a pixel electrode layer (ITO Pixel electrode layer, 159).

As shown in FIG. 3 (d), the gate layer 151 may be formed of a conductive material such as Mg, Al, Ni, Au, etc., The insulating layer 153 may be formed of a layer of an insulating material such as a silicon oxide layer or a silicon nitride layer.

As shown in FIG. 4A, an active layer, which is a constituent of the semiconductor layer 155, is formed on the gate insulating layer 153. This active layer overlaps the gate layer 151 to form a channel. A channel is formed between the source / drain electrodes of the S / D layer 157 on the gate layer 151. The active layer can be formed of a polysilicon layer or an amorphous silicon layer.

The ohmic contact layer constituting the semiconductor layer 155 is formed on the active layer except the channel portion for ohmic contact with the source / drain electrode. The source / drain electrodes of the S / D layer 157 are formed so as to face each other with the channel portion therebetween.

A protective layer 158 is formed on the S / D layer 157 and a pixel electrode layer 159 connected to the source / drain electrodes is formed as shown in FIG. 4 (d), as shown in FIG. The pixel electrode is formed using an indium tin oxide (ITO) electrode. The protective layer 158 may also be formed of an inorganic insulating material or an organic insulating material. It will be apparent to those skilled in the art that such a thin film transistor array is only one example, and can be formed in various known ways.

When the thin film transistor array (TFT) 150 is formed on the capping layer 140 as described above, the protective film (160 in FIG. 1) coated on one side of the pressure sensitive adhesive layer is bonded to the pixel electrode layer 159 Step). The protective film 160 may be a transparent optical film or a polarizing plate. The transparent optical film may be surface-treated if necessary. Examples of the surface treatment include a chemical treatment such as a plasma treatment, a corona treatment, a dry treatment such as a primer treatment, and an alkali treatment including a saponification treatment. Further, the transparent optical film may be an isotropic film, a retardation film, or a protective film.

When the protective film 160 is bonded through the transfer process, the glass substrate as the carrier substrate and the separation layer 120 are separated (step S60). That is, separation can be performed using a method of peeling the separation layer 120 on which the thin film transistor array (TFT) 150 is formed from the organic substrate. The peeling method may be a lift-off method or a peel-off method, but is not limited thereto.

After the glass substrate is separated from the separation layer 120, a substrate layer coated with the adhesive 110, that is, the base film 100 is adhered on one side of the glass substrate 100 (Step S70) A film-type thin film transistor array having the cross-sectional structure as described above can be manufactured. Such a film-type thin film transistor array can be used in a liquid crystal display device. Of course, the upper protective film 160 in the film-type thin film transistor array shown in FIG. 1 can be removed.

According to the embodiment of the present invention as described above, since the thin film transistor array of the present invention forms a thin film transistor array on a glass substrate, even if a high temperature process for forming a semiconductor layer is applied, So that a reliable film-type thin film transistor array can be manufactured.

Further, since the present invention does not use a separate film layer for forming a semiconductor layer, there is an advantage that the yield of production can be improved as compared with the disclosed invention exemplified in the prior art documents.

On the other hand, in the case of a manufacturer, a separating layer 120 is formed on a glass substrate according to a sales policy, a capping layer 140 is formed on the separating layer 120, Type thin film transistor array in which a protective film 160 is bonded on the thin film transistor array 150 after the formation of the thin film transistor array 150. A protective layer may be further formed between the separation layer 120 and the capping layer 140 of the film-type thin film transistor array having such a structure, and the capping layer 140 is preferably formed of an inorganic insulating layer material.

Hereinafter, a flexible liquid crystal display device using a film-type thin film transistor array that can be manufactured by the above-described fabrication method and a method of manufacturing the liquid crystal display device will be described. A flexible liquid crystal display device in which a film- A display device and a manufacturing method thereof will now be described.

In the following embodiments, the method of manufacturing the film-type thin film transistor array described in FIG. 2 is omitted in order to avoid redundant description. The film-type thin film transistor array manufactured by FIG. 2 is newly defined as the thin film transistor array module, And a color filter array connected to the thin film transistor array module is defined as a color filter array module.

[Embodiments of Flexible Liquid Crystal Display Device in which Thin Film Transistor Array Module and Color Filter Array Module are Integrated and Method of Manufacturing the Same]

5 is a cross-sectional structure diagram of a thin film transistor array module (a) and a color filter array module (b) constituting a flexible liquid crystal display device according to an embodiment of the present invention.

Fig. 6 illustrates a bonding state (c) of a flexible liquid crystal display device manufactured by bonding the thin film transistor array module (a) and the color filter array module (b) shown in Fig.

6 (c), the flexible liquid crystal display device in which the thin film transistor array module and the color filter array module are integrated according to the exemplary embodiment of the present invention results in the separation layer 120 A thin film transistor array module (TFTAM) in which a capping layer 140 and a thin film transistor array (TFT) 150 are sequentially formed,

A color filter array module (CFAM) in which a separation layer (220) and a color filter array are sequentially formed on a second base film (200)

And a liquid crystal layer (180) formed on the bonding surface, wherein the thin film transistor array module (TFTAM) and the color filter array module (CFAM) are bonded to each other so that the thin film transistor array and the color filter array face each other.

A protective layer 130 is formed between the separation layer 120 on the first base film 100 constituting the TFT array module and the cap layer 140 as shown in FIG. . Of course, a protective layer may be further formed between the color filter array CF and the isolation layer 220 on the second base film 200 constituting the color filter array module CFAM.

The method of manufacturing the thin film transistor array module (TFTAM) shown in FIG. 5 (a) has already been described with reference to FIG. 2, and will not be described below. However, in order to manufacture a flexible liquid crystal display device using the thin film transistor array module (TFTAM) manufactured by the method described with reference to FIG. 2, the protective film 160 is removed from the manufactured thin film transistor array module (TFTAM) An alignment film is formed (170) on the thin film transistor array 150 as shown in FIG. 5 (a), and alignment property is given to the alignment film 170 by an exposure process so as to be formed later It is preferable that the liquid crystal layer 180 is arranged in a predetermined direction.

5A shows a state in which an alignment layer 170 and a liquid crystal layer 180 are formed on a TFT array module. In FIG. 5B, a color filter array module CFAM) in which the alignment layer 250 is formed. By joining these two modules (TFTAM and CFAM), a flexible liquid crystal display in which the film-type thin film transistor array and the color filter array shown in FIG. 6C are integrated can be manufactured. This will be described later with reference to FIG.

The method of forming the color filter array CF on the base film 200 will be further described with reference to FIG. 5 (b), since the method of manufacturing the thin film transistor array module (TFTAM) has already been described.

First, a separation layer 220 is formed on a second substrate (glass substrate) corresponding to a carrier substrate. The separation layer 220 may be formed in the same manner as described with reference to FIG. Of course, a protective layer may be further formed on the separation layer 220 in the same manner as described in Fig. The second substrate, which is the glass substrate, is separated in a post-process, and the base film 200 to which the adhesive 210 is applied is bonded to the second substrate by a post-process.

Thereafter, a color filter array (CF) 230 is formed on the isolation layer 220 or the protection layer. The color filter array 230 may include a light shielding layer, a color filter (R, G, B) layer, a planarization layer, and an ITO common electrode 240. The light-shielding layers are spaced apart from each other to form a matrix, which is called a black matrix layer. A color filter (R, G, B) layer is formed between the light shielding layers.

When the light shielding layer, the color filter (R, G, B) layer planarization layer and the ITO common electrode 240 constituting the color filter array are formed on the separation layer 220 as described above, the second substrate (glass substrate) The color filter array module (CFAM) is manufactured by separating the second base film 200 from the separation layer 220 and bonding the second base film 200 to one surface of the separation layer 220.

When the thin film transistor array module (TFTAM) and the color filter array module (CFAM) are manufactured using the first and second substrates, respectively, as shown in FIGS. 5A and 5B, Alignment films 170 and 250 are formed on the respective modules (TFTAM and CFAM), and orientation is provided to prevent the liquid crystal from being distorted which may be generated in the flexible implementation. The alignment film patterning process for imparting the alignment property may use the method disclosed in Application No. 10-2010-0025931.

A liquid crystal layer 180 is formed on a thin film transistor array (TFT) above a thin film transistor array module (TFTAM) after forming an orientation film on each module (TFTAM, CFAM), and then a thin film transistor array The first base film 100 and the second base film (that is, the thin film transistor array module and the color filter array) are arranged so that the liquid crystal layer 180 and the color filter array CF formed on the color filter array module CFAM are opposed to each other. Module) is bonded as shown in Fig. 6 (c).

As a result, a flexible liquid crystal display device in which the film-type thin film transistor array and the color filter array are integrated as shown in Fig. 6 (c) can be produced.

Therefore, it is an object of the present invention to provide a flexible liquid crystal display device including a film type thin film transistor array in which no component elements are deformed even in a high temperature process during the manufacturing process, It is a useful invention.

As an alternative embodiment of the present invention, a flexible liquid crystal display device may be manufactured by bonding an externally produced color filter array module to a film-type thin film transistor array module according to an embodiment of the present invention.

That is, a separation layer 120 is formed on a first substrate (glass substrate) and a capping layer 140 is formed on the separation layer 120, in a similar manner to the method shown in FIG. A protective layer 130 may be further formed between the separation layer 120 and the capping layer 140 as described above.

After the capping layer 140 is formed, a thin film transistor array 150 is formed on the capping layer 140, and a protective film 160 coated on one surface of the thin film transistor array 150 is adhered to the capping layer 140. Thereafter, the first substrate is separated from the separation layer 120, and the first base film 100 is bonded to one surface of the separation layer 120 from which the first substrate is separated.

Next, a liquid crystal layer is formed on the thin film transistor array 150 on the first base film 100, and then a color filter array module having a color filter array formed on the substrate layer is bonded onto the liquid crystal layer. The liquid crystal layer and the color filter array formed in the color filter array module are opposed to each other.

Also in this method, a flexible liquid crystal display device in which the thin film transistor array module and the color filter array module are integrated can be normally manufactured.

For reference, the substrate layer of the color filter array module may be either a flexible substrate film or an inflexible substrate.

While the invention has been shown and described with reference to certain embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined only by the appended claims.

Claims (34)

Forming a separation layer on the substrate;
Forming a capping layer on the isolation layer;
Forming a thin film transistor array on the capping layer;
And bonding the protective film coated on one surface with a pressure-sensitive adhesive layer on the thin film transistor array. The method of claim 1, further comprising: separating the substrate from the isolation layer;
And bonding the base film to one side of the separation layer from which the substrate is separated. The method of claim 1 or 2, further comprising forming a protective layer between the isolation layer and the capping layer. 4. The method of claim 3, wherein the capping layer is formed of an inorganic insulating layer material. The method of claim 2, further comprising removing the protective film. The method of claim 1 or 2, wherein the capping layer is formed of an inorganic insulating layer material. A separation layer formed on the substrate;
A capping layer formed on the separation layer;
A thin film transistor array formed on the capping layer;
And a protective film bonded on the thin film transistor array. 8. The film-type thin film transistor array of claim 7, further comprising a protective layer formed between the isolation layer and the cap layer. The film-type thin film transistor array according to claim 7 or 8, wherein the capping layer is formed of an inorganic insulating layer material. The film-type thin film transistor array for a liquid crystal display according to claim 7 or 8, wherein the capping layer is formed of an inorganic insulating layer material. Forming a separation layer on the first substrate;
Forming a capping layer on the isolation layer;
Forming a thin film transistor array on the capping layer;
Bonding a protective film coated on one surface with a pressure-sensitive adhesive layer on the thin film transistor array;
Separating the first substrate from the isolation layer;
Bonding the first base film to one surface of the separation layer from which the first substrate is separated;
Forming an isolation layer on the second substrate and then forming a color filter array on the isolation layer;
Bonding the second base film to one surface of the separation layer from which the second substrate is separated;
Forming a liquid crystal layer on the thin film transistor array on the first base film from which the protective film has been removed;
Bonding the first base film and the second base film so that the liquid crystal layer formed on the first base film and the color filter array formed on the second base film face each other; Of the flexible liquid crystal display device. The method of claim 11, further comprising: forming a protective layer between the separation layer formed on the first substrate and the capping layer; forming a protective layer between the separation layer formed on the second substrate and the color filter array The method further comprising at least one of the following steps. The method according to claim 11 or 12, wherein before forming the liquid crystal layer on the thin film transistor array on the first base film,
Further comprising the steps of: forming an alignment film on each of the thin film transistor array on the first base film and the color filter array on the second base film; and applying an orientation property to each of the alignment films. A method of manufacturing a liquid crystal display device. 14. The method of claim 13, wherein the capping layer is formed of an inorganic insulating layer material. The method of claim 11 or 12, wherein the capping layer is formed of an inorganic insulating layer material. Forming a separation layer on the first substrate;
Forming a capping layer on the isolation layer;
Forming a thin film transistor array on the capping layer;
Bonding a protective film coated on one surface with a pressure-sensitive adhesive layer on the thin film transistor array;
Separating the first substrate from the isolation layer;
Bonding the first base film to one surface of the separation layer from which the first substrate is separated;
Forming a liquid crystal layer on the thin film transistor array on the first base film;
And bonding the color filter array module having the color filter array formed on the base layer to the liquid crystal layer so that the liquid crystal layer and the color filter array formed on the color filter array module face each other Wherein the flexible liquid crystal display device is a flexible liquid crystal display device. 17. The method of claim 16, further comprising forming a protective layer between the separation layer and the capping layer formed on the first substrate. The method according to claim 16 or 17, further comprising, prior to forming the liquid crystal layer on the thin film transistor array on the first base film,
Further comprising forming an alignment film on the thin film transistor array on the first base film and imparting orientation to the alignment film. The method of claim 16 or claim 17, wherein the capping layer is formed of an inorganic insulating layer material. The manufacturing method of a flexible liquid crystal display device according to claim 16 or 17, wherein the substrate layer of the color filter array module is one of a flexible base film and an inflexible substrate. A separation layer formed on the base film;
A capping layer formed on the separation layer;
A thin film transistor array formed on the capping layer;
And a protective film bonded on the thin film transistor array. 22. The film-type thin film transistor array of claim 21, further comprising: a protective layer formed between the separation layer and the capping layer. The film-type thin film transistor array according to claim 21 or 22, wherein the capping layer is formed of an inorganic insulating layer material. The film-type thin film transistor array according to claim 21 or 22, wherein the capping layer is formed of an inorganic insulating layer material. A thin film transistor array module in which an isolation layer, a capping layer, and a thin film transistor array are sequentially formed on a first base film;
A color filter array module in which a separation layer and a color filter array are sequentially formed on a second base film;
And a liquid crystal layer formed on the bonding surface of the thin film transistor array module and the color filter array module so that the thin film transistor array and the color filter array face each other. 26. The flexible liquid crystal display of claim 25, further comprising a protective layer between the separating layer and the capping layer on the first base film, and between the separating layer on the second base film and the color filter array. 27. The flexible liquid crystal display of claim 25 or 26, wherein an alignment film is further formed on at least one of the thin film transistor array of the thin film transistor array module and the color filter array of the color filter array module. 27. The flexible liquid crystal display of claim 27, wherein the alignment film is provided with orientation so that liquid crystals are arranged in a predetermined direction. The flexible liquid crystal display of claim 25 or claim 26, wherein the capping layer is formed of an inorganic insulating layer material. A thin film transistor array module in which an isolation layer, a capping layer, and a thin film transistor array are sequentially formed on a first base film;
A color filter array module having a color filter array formed on a base layer;
And a liquid crystal layer formed on the bonding surface of the thin film transistor array module and the color filter array module so that the thin film transistor array and the color filter array face each other. 32. The flexible liquid crystal display of claim 30, further comprising an alignment layer formed on at least one of the thin film transistor array of the thin film transistor array module and the color filter array of the color filter array module. 32. The flexible liquid crystal display of claim 31, wherein the alignment film is provided with orientation so that liquid crystals are arranged in a predetermined direction. 32. The flexible liquid crystal display of claim 30 or 31, wherein the capping layer is formed of an inorganic insulating layer material. 32. The flexible liquid crystal display of claim 30, wherein the substrate layer is one of a flexible base film and an inflexible substrate.

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