KR102509105B1 - Chemical Mechanical Polishing Equipment for Wafer - Google Patents

Abstract

The present invention relates to a chemical mechanical polishing apparatus of a wafer. The provided chemical mechanical polishing apparatus of the wafer comprises: a platen to which a polishing pad polishing the wafer is attached; a polishing head to which the wafer to be polished is detachably fixed; a dummy head to which a metal plate is detachably fixed as a dummy wafer; and one shaft capable of replacing and detaching the polishing head and the dummy head or two shafts simultaneously fixing the polishing head and the dummy head. The shaft is connected to a rotary driving device to alternately bring the wafer to be polished fixed to the polishing head and the metal plate fixed to the dummy head into rotational contact with the polishing pad. An objective of the present invention is to provide the chemical mechanical polishing apparatus of the wafer, which can significantly lower a wafer polishing cost.

Description

Chemical Mechanical Polishing Equipment for Wafer}

The present invention relates to a chemical mechanical polishing apparatus for wafer polishing.

In the chemical mechanical planarization (CMP) process during the semiconductor manufacturing process, a semiconductor substrate such as a wafer is attached to a head and brought into contact with the surface of a polishing pad formed on a platen. This is a process of chemically reacting the surface of the semiconductor substrate by supplying it, and relatively moving the platen and the head to mechanically flatten the irregularities on the surface of the semiconductor substrate.

In wafer polishing, first, a dummy wafer is mounted on a polishing head, the dummy wafer is rubbed against a polishing pad to raise the temperature of the polishing pad to approximately 60 to 80 ° C, the dummy wafer is removed from the polishing head, and the wafer to be polished is mounted. After that, the polishing process is carried out.

As the dummy wafer, a film formed on a silicon wafer having the same or similar film quality as the film to be planarized is used.

However, since the dummy wafer is a consumable, it needs to be replaced frequently, and since the temperature of the polishing pad repeatedly decreases according to the time required to replace the dummy wafer, the process time required to meet the temperature condition of the polishing pad is long. has a downside.

In addition, there is a disadvantage in that labor required for replacing the dummy wafer is large.

In addition, in the case of using the dummy wafer as described above, since several dummy wafers are used to polish one wafer to be polished, it has a disadvantage that acts as a cause of increasing the wafer polishing cost.

Therefore, a solution to this problem is required.

Republic of Korea Patent Publication No. 10-2009-0046550

The present invention has been made to solve the above problems of the prior art, and chemical mechanical polishing of a wafer can significantly reduce polishing time and labor and significantly reduce wafer polishing costs when polishing a wafer. It aims to provide a device.

In order to achieve the above object, the present invention

a platen to which a polishing pad for polishing a wafer is attached;

a polishing head to which a wafer to be polished is detachably fixed;

a dummy head to which a metal plate is detachably fixed as a dummy wafer;

One shaft capable of replacing and detaching the polishing head and the dummy head or two shafts simultaneously fixing the polishing head and the dummy head;

The shaft is connected to a rotary driving device to alternately bring the wafer to be polished fixed to the polishing head and the metal plate fixed to the dummy head into rotational contact with the polishing pad.

In one embodiment of the present invention, the metal plate may be a circular plate having a fixing means for a dummy head on an upper surface and having a planar shape on a lower surface forming contact with the polishing pad.

In one embodiment of the present invention, the metal plate may be made of at least one selected from stainless steel, aluminum, titanium, tungsten, a stainless steel alloy, an aluminum alloy, a titanium alloy, and a tungsten alloy.

In one embodiment of the present invention, the metal plate may have a thickness ranging from 10 mm to 100 mm.

In one embodiment of the present invention, the roughness of the lower surface of the metal plate may be 0.01 μm to 5 μm Ra.

In one embodiment of the present invention, the metal plate may have a specific gravity of 2 to 8.

In one embodiment of the present invention, the metal plate may have a tensile strength of 10 kg/mm ² to kg/mm ² .

In one embodiment of the present invention, the two shafts are alternately connected to one rotary driving device to alternately rotate a polishing target wafer fixed to the polishing head and a metal plate fixed to the dummy head in rotational contact with the polishing pad. it may be to

In one embodiment of the present invention, the two shafts are respectively fixed to two rotary driving devices, and the rotary driving devices alternately use a polishing target wafer fixed to the polishing head or a metal plate fixed to the dummy head as a polishing pad. It may be to make rotational contact with.

In one embodiment of the present invention, the two shafts or rotation driving devices may automatically and alternately bring a polishing target wafer fixed to the polishing head or a metal plate fixed to the dummy head into rotational contact with the polishing pad.

In one embodiment of the present invention, the dummy head may include a fixing means for fixing the metal plate.

In one embodiment of the present invention, the apparatus for chemical mechanical polishing of the wafer alternately rotates the metal plate fixed to the dummy head and the wafer to be polished fixed to the polishing head in rotational contact with the polishing pad, and is fixed to the dummy head The contact time of the metal plate to the polishing pad may be adjusted to be 2 to 10 times the contact time of the wafer to be polished fixed to the polishing head with the polishing pad.

In one embodiment of the present invention, the metal plate may be used without replacement during polishing.

In one embodiment of the present invention, the apparatus for chemical mechanical polishing of the wafer may further include a dresser.

In one embodiment of the present invention, the chemical mechanical polishing device for the wafer may further include at least one selected from a liquid supply device and a slurry supply device.

The wafer chemical mechanical polishing apparatus of the present invention provides an effect of significantly reducing labor and polishing time consumed by replacing several dummy wafers for each wafer polishing by including a metal plate as a dummy wafer.

In addition, since dozens or hundreds of dummy wafers used in wafer polishing can be replaced with one metal plate, an effect of significantly reducing wafer polishing costs is provided.

In addition, by providing a metal plate that is used without replacement, the temperature drop of the polishing pad, which repeatedly occurs when the conventional dummy wafer is replaced, is prevented, thereby providing an effect of significantly improving the polishing efficiency of the wafer.

1 is a cross-sectional view showing a conventional chemical mechanical polishing apparatus.
Fig. 2 is a diagram schematically showing one embodiment of the chemical mechanical polishing apparatus for a wafer according to the present invention.
3 to 6 are perspective views showing an embodiment of the apparatus for chemical mechanical polishing of a wafer according to the present invention.
7 is a photograph showing a metal plate, a dummy head, and a chemical mechanical polishing apparatus for a wafer having them according to the present invention.
8 is a diagram schematically showing the test method of the test example of the present invention.
9 is a photograph illustrating a method of coupling a metal plate and a dummy head and a rotation driving device of the dummy head according to the present invention.
10 is a view showing a coupling structure of a metal plate, a dummy head, and a rotation driving device according to the present invention.
11 is a photograph of a lower surface of a metal plate and a lower surface of a tungsten wafer according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to describing the present invention, if it is determined that a detailed description of a related known function and configuration may unnecessarily obscure the gist of the present invention, the description thereof will be omitted.

The following description and drawings illustrate specific embodiments so that those skilled in the art may readily practice the present invention. Other embodiments may include structurally and logically other variations. Individual components and functions may generally be chosen unless explicitly required, and the order of the process may vary. Portions and features of some embodiments may be included in or substituted for other embodiments.

2 to 5 are diagrams illustrating one embodiment of the chemical mechanical polishing apparatus 100 for a wafer according to the present invention. 2 is a view schematically showing an embodiment of the chemical mechanical polishing apparatus for wafers according to the present invention, and FIGS. 3 to 5 are views showing an embodiment of the chemical mechanical polishing apparatus for wafers according to the present invention.

The wafer chemical mechanical polishing apparatus 100 of the present invention, as shown in FIGS. 3 to 5,

a platen (or surface plate) 10 to which a polishing pad 12 for polishing a wafer is attached;

a polishing head 20 to which the polishing target wafer 22 is detachably fixed;

a dummy head 30 to which a metal plate 32 is detachably fixed as a dummy wafer;

One shaft (40, FIG. 3) capable of replacing and detaching the polishing head 20 and the dummy head 30 or two shafts 40 (Figs. 4 to 6) simultaneously fixing the polishing head and the dummy head including;

The shaft 40 is connected to the rotary driving device 50 and alternately rotates the polishing target wafer 22 fixed to the polishing head 20 and the metal plate 32 fixed to the dummy head 30 to generate a polishing pad. It is characterized in that it is brought into rotational contact with (12).

In one embodiment of the present invention, the metal plate 32 is used instead of a conventional dummy wafer. Conventionally, various dummy wafers have been used to reduce the consumption of expensive wafers. However, dummy wafers such as oxide wafers do not have low absolute prices, and since dozens or hundreds of dummy wafers are used during wafer polishing, it is difficult to achieve significant cost reduction.

When the present inventors use the metal plate 32 of the present invention instead of the conventional dummy wafer, it is possible to use it for a very long period or semi-permanently, so that the polishing time and labor of the wafer can be significantly reduced, and the expensive dummy wafer The present invention was completed by finding that the polishing cost caused by using can be remarkably reduced, and significantly superior polishing efficiency is obtained compared to the case of using a conventional dummy wafer.

That is, the conventional dummy wafer performs a function of raising the temperature of the polishing pad before applying the polishing target wafer, and the metal plate 32 of the present invention has very excellent performance and does not need to be replaced during polishing, so it is very convenient.

In addition, since there is no need to replace the metal plate in the dummy section during wafer polishing, the temperature of the polishing pad is repeatedly lowered during the replacement time due to the conventional repetitive replacement of the dummy wafer, thereby reducing the temperature conditions for wafer application. It provides the effect of completely solving the problem that was difficult to meet.

As illustrated in FIG. 7 , the metal plate 32 used in the present invention is a circular plate having a fixing means for the dummy head on the upper surface and making contact with the polishing pad 12 on the lower surface. have a flat shape.

The metal plate 32 may be made of one or more selected from among stainless steel, aluminum, titanium, tungsten, stainless steel alloy, aluminum alloy, tungsten alloy, and titanium alloy. Among these, stainless steel, aluminum, and titanium This can be preferably used. Considering the influence of the slurry, a material having strong corrosion resistance in the range of strong acid (pH 2) to strong base (pH 13) may be preferably used.

The metal plate 32 may have a diameter of 100 mm to 300 mm, and a thickness of 10 mm to 100 mm, more preferably 20 mm to 100 mm.

Also, the metal plate 32 may have a hardness ranging from 20 HV to 200 HV. For example, it can be manufactured in 20 HV (aluminum), 200 HV (stainless steel), or 2000 HV (tungsten).

In addition, the roughness of the lower surface of the metal plate 32 in contact with the polishing pad 12 is 0.01 μm to 5 μm Ra, preferably 0.1 μm to 3 μm Ra, more preferably 0.1 μm to 2 μm Ra, More preferably, it may be prepared to be 0.1 μm to 1 μm Ra.

The roughness of the lower surface of the metal plate 32 may be manufactured to have a range shown in Table 1 below, compared to, for example, a tungsten wafer.

Metal Plate Tungsten Wafer Rp 1 to 10 1.8 3.2 Rv 1 to 20 13.7 3.2 Rz 2 to 30 15.4 6.5 Ra 0.1 to 5 0.3 1.4

In addition, the metal plate 32 may be manufactured to have a specific gravity ranging from 2 (aluminum) to 8 (tungsten or stainless steel).

In addition, the metal plate 32 may have a tensile strength of 10 kg/mm ² to 350 kg/mm ² and may be manufactured to be in the range of 20 MPa to 1000 MPa.

The metal plate 32 may be manufactured in various shapes to control the flow of the slurry by inserting various shapes.

In one embodiment of the present invention, when the chemical mechanical polishing apparatus 100 for the wafer is composed of one shaft 40, the polishing head 20 and the metal plate 32 to which the wafer 22 is fixed are The fixed dummy heads 30 are alternately coupled to the one shaft, and thus the polishing target wafer 22 fixed to the polishing head 20 and the metal plate 32 fixed to the dummy head 30 may alternately form rotational contact with the polishing pad 12 .

Although the above method can be regarded as a manual method, consumption of dummy wafers can be greatly reduced by using the metal plate 32 even with this method. In addition, since there is no need to replace exhausted dummy wafers in the dummy wafer application section as in the prior art, the temperature maintaining performance of the polishing pad is very excellent compared to the prior art.

In one embodiment of the present invention, when the chemical mechanical polishing apparatus 100 for the wafer is composed of two shafts 40, as illustrated in FIGS. 4 and 5, the two shafts 40 The polishing pad 12 alternately connects the polishing target wafer 22 fixed to the polishing head 20 and the metal plate 32 fixed to the dummy head 30 alternately connected to one rotary driving device 50 ) can be brought into rotational contact with

At this time, since the shaft 40 and the rotary driving device 50 are connected so that rotational power can be transmitted by a known technique in this field, this type of connection is not particularly limited in the present invention.

Referring to the form of FIG. 4 as an example, the two shafts 40 in FIG. 4 are connected to the rotational drive device 50 so that rotational power is alternately transmitted through the arm 80. At this time, the arm 80 alternately rotates the polishing target wafer 22 fixed to the polishing head 20 and the metal plate 32 fixed to the dummy head 30 while rotating at predetermined time intervals. It is brought into rotational contact with the polishing pad 12.

Rotational power by the rotation drive device 50 may be transmitted to each of the polishing head 20 and the dummy head 30 in various ways known in the art. For example, as shown in FIG. 4 , the rotation shaft and the shaft 40 of the rotation drive device 50 may be connected by a power transmission belt or chain 82 to transmit rotational power.

In the above, the shape of the arm 80 may be provided in a circular, elliptical, or polygonal shape in consideration of the volume of the polishing head and the dummy head and the configuration of the power transmission belt or chain 82 .

In addition, referring to the shape of FIG. 5 as an example, the polishing head 20 and the dummy head 30 coupled to the arm 80 are provided to be movable along a rail (not shown) formed on the arm 80. It is detachably coupled to the rotation shaft of the rotation drive device 50 at a contact position with the polishing pad 12 to transmit rotational power to the wafer 22 or the metal plate 32. In the above, the shape of the arm 80 may be provided in a circular, elliptical, or polygonal shape in consideration of the volume of the polishing head and the dummy head and the rail configuration.

In one embodiment of the present invention, as illustrated in FIG. 6 , the two shafts 40 are each independently provided with two rotation driving devices 50 and fixed to the polishing head 20 to polish the wafer. 22 and the metal plate 32 fixed to the dummy head 30 may be alternately brought into rotational contact with the polishing pad 12 . At this time, the two rotation driving devices 50 are fixed to the arm 90, and the polishing target wafer 22 fixed to the polishing head 20 or the dummy head ( The metal plate 32 fixed to 30) is alternately positioned at a portion where rotational contact with the polishing pad 12 is possible.

A rotational shaft for allowing the arm to rotate may be provided at an upper portion of the arm 90 .

In addition, similar to the method illustrated in FIG. 4, the rotation drive device 50 to which the polishing head 20 is fixed and the rotation drive device 50 to which the dummy head 30 is fixed are provided on the rail provided on the arm 90. The wafer 22 and the metal plate 32 may be alternately brought into contact with the polishing pad 12 by moving along the contact position with the polishing pad. In the above, the shape of the arm 90 may be provided in a circular, elliptical, or polygonal shape in consideration of the volume of the polishing head and the dummy head and the rail configuration.

As described above, when two shafts are used in the present invention, the apparatus 100 for chemical mechanical polishing of wafers can be configured automatically or semi-automatically. Therefore, this form significantly reduces the time for the contact between the metal plate 32 or the wafer 22 and the polishing pad 12 to be released compared to replacing the polishing head 20 and the dummy head 30 manually. can do. Therefore, it is possible to minimize the problem of lowering the temperature of the polishing pad by the contact release.

In one embodiment of the present invention, the dummy head 30 may be formed in the same or similar shape as the polishing head 20 . That is, a fixing means for fixing the shaft 40 or the rotary driving device 50 (for example, a hooking part of the clamp 60) may be provided on the upper surface of the dummy head 30, and the dummy head 30 A fixing means (eg, a male screw or a female screw, a screw hole) for fixing the metal plate 32 may be provided on the disk of the plate (see FIG. 9).

Specifically, in the present invention, the metal plate 32 may be fixed to the dummy head 30 by screwing, as shown in FIG. 9 . For example, the disk of the dummy head 30 may be provided with a plurality of screw holes through which male screws pass through to be coupled to the metal plate 30, and the male screws are screwed into the upper surface of the metal plate 30. A coupling hole having a screw thread capable of being coupled may be provided.

The clamp 60 may perform a function of binding and fixing the clamp engaging portion and the shaft 40 or the rotary driving device 50 together.

In one embodiment of the present invention, the contact time of the metal plate 32 fixed to the dummy head 30 to the polishing pad 12 is the polishing pad of the polishing target wafer fixed to the polishing head 20 ( 22), it may be 2 to 10 times, preferably 3 to 7 times, more preferably 4 to 6 times compared to the contact time for 22).

In the present invention, the metal plate 32 fixed to the dummy head serves to increase the temperature of the polishing pad 12 by friction with the polishing pad 12 .

In one embodiment of the present invention, the apparatus 100 for chemical mechanical polishing of the wafer may further include a dresser 70, and the dresser may further include a dressing disk 74 and a disk holder 72 there is.

In addition, the chemical mechanical polishing apparatus 100 for the wafer may further include one or more selected from a liquid supply unit and a slurry supply unit.

A method for chemical mechanical polishing of a wafer using the polishing apparatus 100 of the present invention includes the steps of polishing a wafer while alternately rotating a metal plate fixed to a dummy head and a polishing target wafer fixed to the polishing head in rotational contact with a polishing pad includes

At this time, the metal plate fixed to the dummy head serves to increase the temperature of the polishing pad to a temperature suitable for polishing the wafer.

All of the above descriptions of the polishing device may be applied to the chemical mechanical polishing method of the wafer. Therefore, descriptions of overlapping contents are omitted below.

In the chemical mechanical polishing method of the wafer, the contact time of the metal plate fixed to the dummy head to the polishing pad 12 is 2 to 10 times the contact time of the polishing target wafer fixed to the polishing head to the polishing pad, It may be preferably 3 to 7 times, more preferably 4 to 6 times.

In the polishing method, the metal plate does not need to be replaced by being separated from the dummy head during polishing. This is because the metal plate can be used semi-permanently for a very long time because it is hard to wear due to its high hardness.

Hereinafter, preferred test examples are presented to aid understanding of the present invention, but the following test examples are merely illustrative of the present invention, and various changes and modifications are possible within the scope and spirit of the present invention. It is obvious to those skilled in the art, It goes without saying that these changes and modifications fall within the scope of the appended claims.

(1) Test of Comparative Example 1

A chemical mechanical polishing apparatus for the wafer shown in FIG. 1 was constructed, and as shown in FIG. 8, the tungsten wafer was polished for 5 hours using the tungsten wafer as a dummy.

Specifically, in order to increase the temperature of the polishing pad, a dummy tungsten wafer was fixed to the polishing head and brought into contact with the polishing pad. At this time, one dummy tungsten wafer was manually replaced every 12 minutes, and a total of 4 dummy tungsten wafers (48 minutes) were replaced and brought into contact with the polishing pad, and then the polishing head polished the dummy tungsten wafer It was manually replaced with a tungsten wafer and contacted with a polishing pad for 12 minutes. In addition, this process was performed 5 times consecutively.

In the case of using the tungsten wafer as the dummy as described above, it was confirmed that the temperature condition (70 to 80° C.) of the polishing pad was satisfied. However, since the consumption of expensive tungsten wafers is very large (about 100 million won for 5 hours of tungsten wafer consumption), it was confirmed that the efficiency of polishing in this way is not very good (see FIG. 8).

(2) Test of Comparative Example 2

A chemical mechanical polishing apparatus for a wafer shown in FIG. 1 was constructed, and as shown in FIG. 8, a tungsten wafer was polished for 5 hours using an oxide wafer as a dummy.

Specifically, in order to increase the temperature of the polishing pad, a dummy oxide wafer was fixed to the polishing head and brought into contact with the polishing pad. At this time, one dummy oxide wafer was manually replaced every 12 minutes, and a total of 4 dummy oxide wafers (48 minutes) were replaced and brought into contact with the polishing pad. The wafer was manually replaced and contacted with the polishing pad for 12 minutes. In addition, this process was performed 5 times consecutively.

In the test process, 20 oxide wafers were consumed, resulting in high evaluation cost. In addition, it was confirmed that the temperature of the polishing pad was repeatedly lowered during the replacement time between the oxide wafers, and for this reason, the temperature condition (70 to 80° C.) of the polishing pad for applying the tungsten wafer was not satisfied.

(3) Test of Example 1

The chemical mechanical polishing apparatus of the present invention shown in FIG. 3 was configured, and as shown in FIG. 8, a tungsten wafer was polished for 5 hours using a metal plate made of stainless steel as a dummy.

Specifically, in order to increase the temperature of the polishing pad, a metal plate was fixed to the dummy head as a dummy, and the dummy head was fixed to a shaft of a rotary driving device to contact the polishing pad. At this time, the dummy metal plate was continuously used without replacement, and after 48 minutes, the dummy head was manually replaced with a polishing head having a tungsten wafer to be polished fixed thereon, and contacted with the polishing pad for 12 minutes. In addition, this process was performed 5 times consecutively.

Targets for applying tungsten wafers in each time zone (1, 2, 3, 4 and 5 hours) equivalent to the test results of Comparative Example 1 using an expensive tungsten wafer as a dummy when the above test results and metal plates are applied It was confirmed that the temperature conditions (70 to 80 ° C.) were satisfied.

This result seems to be attributable to the fact that the metal plate was continuously used without replacing the dummy wafer by using the metal plate in the dummy wafer application section. That is, in Example 1 of the present invention, as in Comparative Example 2, the time required to replace exhausted dummy wafers is unnecessary, and thus the problem of repeatedly lowering the polishing pad temperature by replacing the dummy wafers does not occur. Therefore, it is judged that the temperature condition of the polishing pad for application of the tungsten wafer was also smoothly achieved.

1: platen 2: polishing pad
3: polishing head 4: dresser
5: liquid supply nozzle 6: slurry supply nozzle
10: platen (surface) 12: polishing pad
14: fixed jig 16: rotation axis
20: polishing head 22: polishing target wafer
30: dummy head 32: metal plate
40: shaft 50: rotary drive device
60: clamp 70: dresser
72: disk holder 74: dressing disk
80, 90: arm 82: power transmission belt or chain

Claims (15)

a platen to which a polishing pad for polishing a wafer is attached;
a polishing head to which a wafer to be polished is detachably fixed;
a dummy head to which a metal plate is detachably fixed as a dummy wafer;
One shaft capable of replacing and detaching the polishing head and the dummy head or two shafts simultaneously fixing the polishing head and the dummy head;
The shaft is connected to a rotary driving device to alternately rotate a wafer to be polished fixed to the polishing head and a metal plate fixed to the dummy head to contact the polishing pad,
The metal plate is made of at least one selected from stainless steel, aluminum, titanium, tungsten, stainless steel alloy, aluminum alloy, titanium alloy, and tungsten alloy,
The metal plate has a thickness of 10 mm to 100 mm,
The metal plate has a lower surface roughness of 0.01 μm to 5 μm Ra,
The metal plate has a tensile strength of 10 kg/mm ² to 350 kg/mm ² ,
The metal plate serves to raise the temperature of the polishing pad to a temperature suitable for polishing the wafer,
The metal plate fixed to the dummy head and the wafer to be polished fixed to the polishing head are alternately in rotational contact with the polishing pad, and the contact time of the metal plate fixed to the dummy head with the polishing pad is fixed to the polishing head. Chemical mechanical polishing apparatus for a wafer, characterized in that the contact time of the polishing target wafer to the polishing pad is adjusted to 2 to 10 times. According to claim 1,
The chemical mechanical polishing apparatus for a wafer, characterized in that the metal plate is a circular plate, has a fixing means for a dummy head on an upper surface, and has a flat shape on a lower surface to form contact with a polishing pad. delete delete delete According to claim 1,
The chemical mechanical polishing apparatus for a wafer, characterized in that the metal plate has a specific gravity of 2 to 8. delete According to claim 1,
The two shafts are alternately connected to one rotary driving device to alternately bring the wafer to be polished fixed to the polishing head and the metal plate fixed to the dummy head into rotational contact with the polishing pad. polishing device. According to claim 1,
The two shafts are respectively fixed to two rotary driving devices, and the rotary driving devices alternately contact the polishing target wafer fixed to the polishing head or the metal plate fixed to the dummy head with the polishing pad. Chemical mechanical polishing of the wafer Device. The method of claim 8 or 9,
The two shafts or rotation drive devices automatically and alternately bring the polishing target wafer fixed to the polishing head or the metal plate fixed to the dummy head into rotational contact with the polishing pad. According to claim 1,
The chemical mechanical polishing apparatus for a wafer, characterized in that the dummy head includes a fixing means for fixing the metal plate. delete According to claim 1,
The chemical mechanical polishing apparatus for a wafer, characterized in that the metal plate is used without replacement during polishing. According to claim 1,
The chemical mechanical polishing apparatus for a wafer further comprises a dresser. According to claim 1,
The chemical mechanical polishing device for a wafer further comprises at least one selected from a liquid supply device and a slurry supply device.

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