KR102504570B1 - Apparatus for treating substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. A substrate processing apparatus for processing a substrate according to an embodiment of the present invention includes a chamber having an inner space; a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area; and an exhaust plate for exhausting gas in the processing region and the driving region, wherein a substrate is processed in the processing region, the driving region is provided below the processing region, and components necessary for the processing are driven. An actuator is provided, and the exhaust plate has an upper region corresponding to the processing region and a lower region corresponding to the driving region.

Description

Substrate processing device {APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to an apparatus for processing a substrate.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among these processes, as a process of forming a film on a substrate, a deposition and spin-on hard mask (SOH) process is used.

In general, a deposition process is a process of depositing a process gas on a substrate to form a film on the substrate, and a coating process is a process of forming a liquid film by supplying a processing liquid to the center of the substrate.

A bake process is performed before and after the application process. The bake process is a process of heat-treating a substrate, and the substrate placed on the heating plate is heat-treated using heat provided from a heater.

1 is a cross-sectional view showing an apparatus for heat treating a general substrate. Referring to FIG. 1, a heat treatment device 1 generally includes an exhaust unit 3 for exhausting gas inside the chamber 2, but does not include a configuration for separately introducing gas into the chamber 2. The amount of gas exhausted is small, so the exhaust efficiency is low. Therefore, fumes and residual gases may not be sufficiently exhausted, and high-temperature gases may remain, thereby excessively increasing the temperature in the chamber 2 . In addition, it is not easy to properly maintain the temperature inside the chamber 2 because it is difficult to generate an air flow inside the chamber 2 .

An object of the present invention is to provide a substrate processing apparatus capable of increasing exhaust efficiency in a chamber.

In addition, the present invention is to provide a substrate processing apparatus capable of properly maintaining the temperature in the chamber.

The problem to be solved by the present invention is not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. According to one embodiment, a substrate processing apparatus for processing a substrate includes a chamber having an inner space; a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area; and an exhaust plate for exhausting gas in the processing region and the driving region, wherein a substrate is processed in the processing region, the driving region is provided below the processing region, and components necessary for the processing are driven. An actuator is provided, and the exhaust plate has an upper region corresponding to the processing region and a lower region corresponding to the driving region.

The substrate processing apparatus further includes a gas supply member introducing gas into the inner space.

The gas supply member introduces gas into the processing region and the driving region.

An upper exhaust hole for exhausting gas in the processing region is formed in the upper region, and a lower exhaust hole for exhausting gas in the driving region is formed in the lower region.

The upper exhaust hole and the lower exhaust hole may be provided in different shapes.

The upper exhaust hole may have a plurality of holes arranged in a lattice shape, and the lower exhaust hole may have a slit shape.

A gas inlet through which gas is introduced from the gas supply member is formed on a first sidewall of the chamber, and the exhaust plate is mounted on a second sidewall of the chamber different from the first sidewall.

The first sidewall and the second sidewall are provided to face each other.

The gas inlet and the exhaust plate are provided at a higher position than the base plate, an inlet hole is formed in an area adjacent to the first sidewall of the base plate, and an exhaust hole is formed in an area adjacent to the second sidewall of the base plate. is formed

A guide plate for guiding the gas discharged from the discharge hole to the lower exhaust hole is provided on the upper surface of the base plate, and the guide plate is provided in a shape protruding from the upper surface of the base plate toward the lower exhaust hole. A hole is located between the guide plate and the exhaust plate.

The apparatus may further include a heating unit provided inside the chamber to heat the substrate and a cooling unit provided inside the chamber to cool the substrate.

The heating unit and the cooling unit are provided on the base plate, and the heating unit is provided at a position closer to the exhaust plate than the cooling unit.

A plurality of the chambers may be provided in a stacked manner, and exhaust pipes connected to the exhaust plate corresponding to the respective chambers may have cross sections perpendicular to a longitudinal direction having different sizes.

According to one embodiment of the present invention, the substrate processing apparatus of the present invention can increase exhaust efficiency in the chamber.

In addition, according to an embodiment of the present invention, the substrate processing apparatus of the present invention can appropriately maintain the temperature in the chamber.

1 is a cross-sectional view showing an apparatus for thermally treating a general substrate.
2 is a plan view showing a substrate processing facility according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of the substrate processing facility of FIG. 2 viewed from an AA direction.
FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 3 viewed from above.
FIG. 5 is a view showing the exhaust plate of FIG. 3 viewed from a first sidewall.
6 is an enlarged view showing an enlarged state of part B of FIG. 3 .

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following examples. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of elements in the figures are exaggerated to emphasize clearer description.

The equipment of this embodiment is used to perform a process of forming a liquid film by supplying a treatment liquid to a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the equipment of this embodiment is used to perform a process of forming a liquid by rotating the substrate and supplying the treatment liquid to the center of the substrate. Below, a case where a wafer is used as a substrate will be described as an example. However, the substrate may be various types of substrates other than a semiconductor wafer, such as a flat panel display panel and a photo mask. Also, unlike this, the substrate processing apparatus according to the embodiments of the present invention can be applied to various facilities requiring a configuration for exhausting gas in the chamber.

2 is a plan view showing a substrate processing facility according to an embodiment of the present invention. Referring to FIG. 2 , a substrate processing facility 10 includes an index module 10 and a process processing module 20 . The index module 10 has a load port 120 and a transfer frame 140 . The load port 120, the transfer frame 140, and the processing module 20 are sequentially arranged in a line. Hereinafter, the direction in which the load port 120, the transfer frame 140, and the process module 20 are arranged is referred to as a first direction 12, and when viewed from above, is perpendicular to the first direction 12. The direction is referred to as a second direction 14, and a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16.

The carrier 18 in which the substrate W is accommodated is seated in the load port 120 . A plurality of load ports 120 are provided and they are arranged in a line along the second direction 14 . The number of load ports 120 may increase or decrease according to process efficiency and footprint conditions of the process processing module 20 . The carrier 18 is formed with a plurality of slots (not shown) for accommodating the substrates W in a state in which they are arranged horizontally with respect to the ground. A front opening unified pod (FOUP) may be used as the carrier 18 .

The process processing module 20 has a buffer unit 220 , a transfer chamber 240 , a coating chamber 260 , and a bake chamber 280 . The transfer chamber 240 is disposed parallel to the first direction 12 in its longitudinal direction. The application chambers 260 are disposed on one side of the transfer chamber 240, and the bake chambers 280 are disposed on the other side. The application chambers 260 and the bake chambers 280 are provided symmetrically with respect to the transfer chamber 240 . A plurality of application chambers 260 are provided on one side of the transfer chamber 240 . Some of the application chambers 260 are disposed along the length direction of the transfer chamber 240 . Also, some of the application chambers 260 are arranged stacked with each other. That is, at one side of the transfer chamber 240, the application chambers 260 may be disposed in an arrangement of A X B. Here, A is the number of application chambers 260 provided in a line along the first direction 12, and B is the number of application chambers 260 provided in a line along the third direction 16. When 4 or 6 coating chambers 260 are provided on one side of the transfer chamber 240, the coating chambers 260 may be arranged in a 2 X 2 or 3 X 2 arrangement. The number of application chambers 260 may increase or decrease. Unlike the above, the coating chamber 260 may be provided in a single layer on one side and both sides of the transfer chamber 240 . A plurality of bake chambers 280 are provided on the other side of the transfer chamber 240 . The number of bake chambers 280 may be greater than that of the coating chambers 260 . Some of the bake chambers 280 are disposed along the longitudinal direction of the transfer chamber 240 . Also, some of the bake chambers 280 are stacked with each other. That is, the bake chambers 280 may be arranged in a C X D arrangement on the other side of the transfer chamber 240 . Here, C is the number of bake chambers 280 provided in a row along the first direction 12, and D is the number of bake chambers 280 provided in a row along the third direction 16. When four or six bake chambers 280 are provided on the other side of the transfer chamber 240, the bake chambers 280 may be arranged in a 2 X 2 or 3 X 2 arrangement. The number of bake chambers 280 may increase or decrease. Unlike the above, the bake chambers 280 may be provided in a single layer.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240 . The buffer unit 220 provides a space where the substrate W stays before being transported between the transfer chamber 240 and the transfer frame 140 . A slot (not shown) in which the substrate W is placed is provided inside the buffer unit 220 . A plurality of slots (not shown) are provided so as to be spaced apart from each other along the third direction 16 . The surface of the buffer unit 220 facing the transfer frame 140 and the surface facing the transfer chamber 240 are open.

The transfer frame 140 transfers the substrate W between the carrier 18 seated on the load port 120 and the buffer unit 220 . An index rail 142 and an index robot 144 are provided on the transfer frame 140 . The length direction of the index rail 142 is parallel to the second direction 14 . The index robot 144 is installed on the index rail 142 and linearly moves in the second direction 14 along the index rail 142 . The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed to be movable along the index rail 142 . The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. In addition, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward with respect to the body 144b. A plurality of index arms 144c are provided to be individually driven. The index arms 144c are stacked and spaced apart from each other along the third direction 16 . Some of the index arms 144c are used when transferring the substrate W from the process module 20 to the carrier 18, and other parts of the index arms 144c are used to transfer the substrate W from the carrier 18 to the process module 20. ) can be used when transporting. This can prevent particles generated from the substrate W before processing from being attached to the substrate W after processing during the process of carrying in and unloading the substrate W by the index robot 144 .

The transfer chamber 240 is between the buffer unit 220 and the coating chamber 260, between the coating chamber 260 and the bake chamber 280, between the bake chambers 280, and between the coating chambers 260, the substrate ( W) is returned. A guide rail 242 and a main robot 244 are provided in the transfer chamber 240 . The guide rail 242 is disposed such that its longitudinal direction is parallel to the first direction 12 . The main robot 244 is installed on the guide rail 242 and moves linearly along the first direction 12 on the guide rail 242 . The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed to be movable along the guide rail 242 . The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. In addition, the body 244b is provided to be rotatable on the base 244a. The main arm 244c is coupled to the body 244b, and is provided to be movable forward and backward with respect to the body 244b. A plurality of main arms 244c are provided to be individually driven. The main arms 244c are stacked and spaced apart from each other along the third direction 16 .

In the coating chamber 260, a film forming process of forming a film on the substrate W is performed. Each application chamber 260 has the same structure. However, the coating chamber 260 may have a different structure depending on the type of film forming process to be performed. Optionally, the application chambers 260 are divided into a plurality of groups, so that the configurations in the application chambers 260 belonging to the same group are identical to each other, and the configurations in the application chambers 260 belonging to different groups are provided differently from each other. can According to one embodiment, in the coating chamber 260, a thin film such as a hard mask film is formed on the substrate. According to an example, a spin-on hard mask (SOH) process may be performed in the coating chamber 260 .

The substrate processing apparatus provided to each bake chamber 280 has the same structure. However, the substrate processing apparatus provided to the bake chamber 280 may have a different structure depending on the type of film forming process performed or the difference in exhaust volume due to the difference in height of each chamber 810 . Optionally, the bake chambers 280 are divided into a plurality of groups, so that substrate processing devices provided to the bake chambers 280 belonging to the same group are identical to each other, and substrate processing devices provided to the bake chambers 280 belonging to different groups. may be provided differently from each other.

FIG. 3 is a cross-sectional view of the substrate processing facility of FIG. 2 viewed from the direction A-A. FIG. 4 is a cross-sectional view of the substrate processing apparatus 800 of FIG. 3 viewed from above. Referring to FIGS. 3 and 4 , according to an embodiment, a bake chamber 280 is provided as a substrate processing apparatus 800 that performs a heat treatment process on the substrate W. For example, the substrate processing apparatus 800 may perform a pre-bake process of heating the substrate W to a predetermined temperature to remove organic substances or moisture from the surface of the substrate W before applying the treatment liquid, or applying the treatment liquid to the substrate (W). W), a soft bake process or the like performed after application, and a cooling process of cooling the substrate W after each heating process may be performed.

The substrate processing apparatus 800 includes a chamber 810 , a base plate 820 , an exhaust plate 830 , a gas supply member 840 , a heating unit 850 and a cooling unit 860 .

Chamber 810 has an interior space. The inner space includes a processing area 811 and a driving area 812 . A gas inlet 815 through which gas flows from the gas supply member 840 into the inner space of the chamber 810 is formed on the first sidewall 813 of the chamber 810 . The exhaust plate 830 is mounted to the second sidewall 814 of the chamber 810 . The second sidewall 814 is a sidewall of the chamber 810 that is different from the first sidewall 813 . For example, the first sidewall 813 and the second sidewall 814 are provided to face each other. Accordingly, the gas introduced from the gas inlet 815 can be easily discharged to the exhaust plate 830 . The gas inlet 815 and the exhaust plate 830 are provided at a higher position than the base plate 820 .

As described above, when the substrate processing apparatus 800 is provided to be stacked, the chamber 810 is provided to be stacked. In this case, the exhaust pipe 880 connected to the exhaust plate 830 corresponding to each chamber 810 is shown in the drawing as having cross sections perpendicular to the longitudinal direction having the same size as each other. However, unlike this, the cross section of the exhaust pipe 880 connected to the exhaust plate 830 corresponding to each chamber 810 may be adjusted to have different sizes from each other in the longitudinal direction. Optionally, the sizes of cross sections perpendicular to the longitudinal direction of some or all of the exhaust pipes 880 may be provided to be the same. Accordingly, the size of each exhaust pipe 880 may be set to equally adjust the amount of gas exhausted from each chamber 810 . In contrast, when the required exhaust amount of each substrate processing apparatus 800 is different from each other, the size of the exhaust pipe 880 may be adjusted to optimize the exhaust amount of each chamber 810 . The size of the exhaust pipe 880 may be determined according to simulation or test run results.

In the processing region 811, substrate processing is performed. According to an embodiment, a heating unit 850 for heating the substrate and a cooling unit 860 for cooling the substrate may be provided in the processing area 811 .

The driving area 812 is provided below the processing area 811 . Drivers for driving members required for substrate processing performed in the processing area 811 are provided in the driving area 812 . For example, in the drive region 812, a driver for moving the support pin 854 of the substrate support unit 852 in the vertical direction, a driver for moving the upper housing 851a in the vertical direction, and the transfer unit 870 are heated. A driver or the like that drives the transfer unit 870 may be provided to transfer substrates between the unit 850 and the cooling unit 860 .

The base plate 820 is provided within the chamber 810 and divides the internal space of the chamber 810 into a processing area 811 and a driving area 812 . A component for processing a substrate is placed on the base plate 820 . For example, a heating unit 850 and a cooling unit 860 may be placed on the base plate 820 . An inlet hole 821 and an outlet hole 822 are formed in the base plate 820 .

The inflow hole 821 is formed in an area adjacent to the first sidewall 813 of the base plate 820 , and the discharge hole 822 is formed in an area adjacent to the second sidewall 814 of the base plate 820 . Accordingly, some of the gas introduced into the inner space of the chamber 810 from the gas inlet 815 formed on the first sidewall 813 passes through the processing area 811 and passes through the upper exhaust hole 831 of the exhaust plate 830. The other part passes through the inlet hole 821 and enters the drive area 812, and comes out to the processing area 811 through the discharge hole 822 and is discharged through the lower exhaust hole 832 of the exhaust plate 830. do. The inlet hole 821 and the outlet hole 822 may be provided in various shapes. The inlet hole 821 may be provided in a slit shape formed along the first sidewall 813 in a longitudinal direction. The discharge hole 822 may be provided with a plurality of holes arranged in a line along the second sidewall 814 . Alternatively, the inlet hole 821 and the outlet hole 822 may be selectively provided in various shapes. For example, the inlet hole 821 and the outlet hole 822 may be formed when the base plate 820 is spaced apart from the first sidewall 813 and the second sidewall 814 at a predetermined interval.

FIG. 5 is a view showing the exhaust plate 830 of FIG. 3 viewed from the first sidewall 813 . Referring to FIGS. 3 to 5 , the exhaust plate 830 exhausts gases in the processing area 811 and the driving area 812 . According to an embodiment, an upper region of the exhaust plate 830 corresponds to the processing region 811 and a lower region of the exhaust plate 830 corresponds to the driving region 812 . For example, an upper exhaust hole 831 is formed in an upper area of the exhaust plate 830 and a lower exhaust hole 832 is formed in a lower area of the exhaust plate 830 .

The upper exhaust hole 831 exhausts gas within the processing area 811 , and the lower exhaust hole 832 exhausts gas within the driving area 812 . According to one embodiment, the upper exhaust hole 831 and the lower exhaust hole 832 are provided in different shapes. For example, the upper exhaust hole 831 is provided with a plurality of holes arranged in a lattice shape, and the lower exhaust hole 832 is provided in a slit shape. Therefore, the area through which gas can be exhausted per unit area of the exhaust plate 830 is increased compared to the upper exhaust hole 831 provided in the shape of a plurality of lower exhaust holes 832 for exhausting gas in the driving region 812. provide a wide Therefore, the gas inlet 815 and the exhaust plate 830 are provided higher than the base plate 820 so that the gas in the driving area 812 that may be obstructed by the base plate 820 can be more easily exhausted. . Unlike this, the upper exhaust hole 831 and the lower exhaust hole 832 may be selectively provided in various shapes. For example, the upper exhaust hole 831 may be provided in a slit shape and the lower exhaust hole 832 may be provided in a plurality of hole shapes. Alternatively, the upper exhaust hole 831 and the lower exhaust hole 832 may be provided in the same shape as each other.

The gas supply member 840 introduces gas into the inner space of the chamber 810 . The gas supply member 840 introduces gas into the processing region 811 and the driving region 812 . According to one embodiment, the gas supply member 840 includes a fan filter 841 and an inlet pipe 842. The fan filter 841 supplies gas into the inlet pipe 842 . The gas introduced into the inlet pipe 842 by the fan filter 841 is introduced into the inner space of the chamber 810 through the gas inlet 815 . When the plurality of chambers 810 are provided to be stacked on each other, the inlet pipe 842 communicates with the gas inlet 815 corresponding to each chamber 810 and the fan filter 841 . Accordingly, the amount of gas flowing into the inner space of each chamber 810 may be different due to a difference in height of each chamber 810 . However, as described above, the amount of gas flowing into the inner space of each chamber 810 may be equally adjusted by adjusting the size of the exhaust pipe 880 corresponding to each chamber 810 .

6 is an enlarged view showing an enlarged state of part B of FIG. 3 . Referring to FIGS. 3, 4 and 6 , a guide plate 823 is provided on the upper surface of the base plate 820 . The guide plate 823 guides the gas discharged from the exhaust hole 822 to the lower exhaust hole 832 . For example, the guide plate 823 protrudes from the upper surface of the base plate 820 toward the lower exhaust hole 832 . In this case, the exhaust hole 822 is located between the guide plate 823 and the exhaust plate 830 . Accordingly, the gas introduced into the processing region 811 from the driving region 812 through the discharge hole 822 can be more easily discharged through the lower exhaust hole 832 of the exhaust plate 830 .

Referring back to FIGS. 3 and 4 , the heating unit 850 heats the substrate W in the inner space of the chamber 810 . According to one embodiment, the heating unit 850 is provided in the inner space of the chamber 810 . A heating unit 850 is provided on the base plate 820 . The heating unit 850 includes a housing 851 , a substrate support unit 852 , a heater 853 and support fins 854 . The housing 851 has a space inside which heat treatment can be performed on the substrate. The housing 851 includes an upper housing 851a and a lower housing 851b.

The upper housing 851a covers the upper part of the lower housing 851b to seal the inside of the housing 851. Residual gas such as fume generated during the heating process is exhausted by an exhaust unit connected to the upper portion of the upper housing 851a. The upper housing 851a may be opened by moving upward in order to transport the substrate W into and out of the housing 851 or to maintain/repair components inside the housing. A driver for driving the upper housing 851a in the vertical direction is provided in the driving region 812 .

A substrate support unit 852 is placed on the lower housing 851b. A substrate W is placed on the substrate support unit 852 . A heater 853 such as a hot wire or a thermoelectric element may be provided inside the substrate support unit 852 . The heater 853 heats the substrate W placed on the substrate support unit 852 by heating the substrate support unit 852 . Also, support pins 854 for seating the substrate W on the substrate support unit 852 may be provided inside the substrate support unit 852 . By moving the support pin 854 up and down, the substrate may be seated on the substrate support unit 852 or lifted from the substrate support unit 852 .

The cooling unit 860 cools the substrate W in the inner space of the chamber 810 . The cooling unit 860 is provided in the inner space of the chamber 810 . A cooling unit 860 is provided on the base plate 820 . The heating unit 850 is provided at a position closer to the exhaust plate 830 than the cooling unit 860 . The cooling unit 860 is provided with cooling means such as cooling water or a thermoelectric element.

Alternatively, the cooling unit 860 and the heating unit 850 may be provided in one bake chamber 280, respectively. That is, some of the bake chambers 280 may include only the cooling unit 860 and other portions may include only the heating unit 850 .

The transfer unit 870 transfers the substrate between the cooling unit 860 and the heating unit 850 . According to one embodiment, the conveying unit 870 is provided above the cooling unit 860 . The substrate introduced into the inner space of the chamber 810 from the transfer chamber 810 is placed on the hand of the transfer unit 870 . The transfer unit 870 transfers the substrate placed on the hand into the housing 851 of the heating unit 850 . The substrate W, which has been subjected to heat treatment in the heating unit 850 , is transported again to the cooling unit 860 by the transport unit 870 and cooled. The hand of the transfer unit 870 is provided in a shape capable of preventing interference with the support pin 854.

As described above, the substrate processing apparatus 800 according to the embodiment of the present invention provides a separate gas supply member 840 in addition to the configuration for discharging gas from the internal space of the chamber 810, and the exhaust plate 830 By providing the shapes of the upper exhaust hole 831 and the lower exhaust hole 832 differently from each other as described above, the exhaust efficiency of easily discharging fume, residual gas, etc. in the chamber 810 can be increased. . Therefore, the temperature in the chamber can be maintained more appropriately.

800: substrate processing device 810: chamber
820: base plate 830: exhaust plate
831: upper exhaust hole 832: lower exhaust hole
840: gas supply member 850: heating unit
860: cooling unit 880: exhaust pipe

Claims (19)

In the apparatus for processing the substrate,
a chamber having an inner space;
a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area;
An exhaust plate for exhausting gas in the processing region and the driving region;
In the processing area, processing of the substrate is performed,
The driving area is provided below the processing area, and a driver for driving members necessary for the processing is provided,
The exhaust plate is provided such that an upper region thereof corresponds to the processing region and a lower region thereof corresponds to the driving region;
The device further includes a gas supply member for introducing gas into the inner space,
An upper exhaust hole for exhausting gas in the processing region is formed in the upper region, and a lower exhaust hole for exhausting gas in the driving region is formed in the lower region.
In the upper exhaust hole, a plurality of holes are arranged in a lattice shape,
The lower exhaust hole is provided in a slit shape. delete According to claim 1,
The gas supply member introduces gas into the processing region and the driving region. delete delete delete In the apparatus for processing the substrate,
a chamber having an inner space;
a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area;
An exhaust plate for exhausting gas in the processing region and the driving region;
In the processing area, processing of the substrate is performed,
The driving area is provided below the processing area, and a driver for driving members necessary for the processing is provided,
The exhaust plate is provided such that an upper region thereof corresponds to the processing region and a lower region thereof corresponds to the driving region;
The device further includes a gas supply member for introducing gas into the inner space,
An upper exhaust hole for exhausting gas in the processing region is formed in the upper region, and a lower exhaust hole for exhausting gas in the driving region is formed in the lower region.
A gas inlet through which gas flows from the gas supply member is formed on a first sidewall of the chamber;
the exhaust plate is mounted to a second sidewall of the chamber different from the first sidewall;
The gas inlet and the exhaust plate are provided at a higher position than the base plate,
An inlet hole is formed in an area adjacent to the first sidewall of the base plate, and an outlet hole is formed in an area adjacent to the second sidewall of the base plate. According to claim 7,
The first sidewall and the second sidewall are provided to face each other. delete According to claim 7,
A guide plate is provided on the upper surface of the base plate to guide the gas discharged from the discharge hole to the lower exhaust hole.
The guide plate is provided in a shape protruding from the upper surface of the base plate toward the lower exhaust hole,
The discharge hole is positioned between the guide plate and the exhaust plate. The method of any one of claims 1, 3, 7, 8, and 10,
The apparatus further comprises a heating unit provided inside the chamber and heating the substrate. According to claim 11,
The apparatus further comprises a cooling unit provided inside the chamber and cooling the substrate. According to claim 12,
The heating unit and the cooling unit are provided on the base plate,
The heating unit is provided at a position closer to the exhaust plate than the cooling unit. In the apparatus for processing the substrate,
a chamber having an inner space;
a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area;
An exhaust plate for exhausting gas in the processing region and the driving region;
In the processing area, processing of the substrate is performed,
The driving area is provided below the processing area, and a driver for driving members necessary for the processing is provided,
The exhaust plate is provided such that an upper region thereof corresponds to the processing region and a lower region thereof corresponds to the driving region;
The apparatus further comprises a heating unit provided inside the chamber and heating the substrate;
A plurality of the chambers are provided in a stacked manner,
Exhaust pipes connected to the exhaust plates corresponding to the respective chambers may have cross sections perpendicular to a longitudinal direction provided in different sizes. In the apparatus for processing the substrate,
a chamber having an inner space;
a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area;
a gas supply member for introducing gas into the processing region and the driving region;
an exhaust plate for exhausting gas in the processing region and the driving region; and
a cooling unit for cooling the substrate inside the chamber;
Including a heating unit for heating the substrate inside the chamber,
In the processing area, processing of the substrate is performed,
The driving area is provided below the processing area, and a driver for driving members necessary for the processing is provided,
The exhaust plate has an upper region corresponding to the processing region and a lower region corresponding to the driving region,
An upper exhaust hole for exhausting gas in the processing region is formed in the upper region, and a lower exhaust hole for exhausting gas in the driving region is formed in the lower region.
In the upper exhaust hole, a plurality of holes are arranged in a lattice shape,
The lower exhaust hole is provided in a slit shape. delete According to claim 15,
A gas inlet through which gas flows from the gas supply member is formed on a first sidewall of the chamber;
the exhaust plate is mounted to a second sidewall of the chamber different from the first sidewall;
The first sidewall and the second sidewall are provided to face each other. 18. The method of claim 17,
The gas inlet and the exhaust plate are provided at a higher position than the base plate,
An inlet hole is formed in an area adjacent to the first sidewall of the base plate, and an outlet hole is formed in an area adjacent to the second sidewall of the base plate. In the apparatus for processing the substrate,
a chamber having an inner space;
a base plate provided in the chamber and partitioning the inner space into a processing area and a driving area;
a gas supply member for introducing gas into the processing region and the driving region;
An exhaust plate for exhausting gas in the processing area and the driving area;
a cooling unit for cooling the substrate inside the chamber;
Including a heating unit for heating the substrate inside the chamber,
In the processing area, processing of the substrate is performed,
The driving area is provided below the processing area, and a driver for driving members necessary for the processing is provided,
The exhaust plate is provided such that an upper region thereof corresponds to the processing region and a lower region thereof corresponds to the driving region;
An upper exhaust hole for exhausting gas in the processing region is formed in the upper region, and a lower exhaust hole for exhausting gas in the driving region is formed in the lower region.
A gas inlet through which gas flows from the gas supply member is formed on a first sidewall of the chamber;
the exhaust plate is mounted to a second sidewall of the chamber different from the first sidewall;
The first sidewall and the second sidewall are provided to face each other,
The gas inlet and the exhaust plate are provided at a higher position than the base plate,
An inlet hole is formed in a region adjacent to the first sidewall of the base plate, and an outlet hole is formed in a region adjacent to the second sidewall of the base plate;
A guide plate is provided on the upper surface of the base plate to guide the gas discharged from the discharge hole to the lower exhaust hole.
The guide plate is provided in a shape protruding from the upper surface of the base plate toward the lower exhaust hole,
The discharge hole is positioned between the guide plate and the exhaust plate.

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