KR102484595B1 - Real-to-real display semiconductor post-process bonding method using NCP resin - Google Patents

Real-to-real display semiconductor post-process bonding method using NCP resin Download PDF

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KR102484595B1
KR102484595B1 KR1020200163252A KR20200163252A KR102484595B1 KR 102484595 B1 KR102484595 B1 KR 102484595B1 KR 1020200163252 A KR1020200163252 A KR 1020200163252A KR 20200163252 A KR20200163252 A KR 20200163252A KR 102484595 B1 KR102484595 B1 KR 102484595B1
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bonding
reel
ncp
cof
resin
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KR20220074586A (en
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김성일
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우리테크놀러지 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors

Abstract

본 발명은 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법에 관한 것으로, 더욱 상세하게는 PKG가 가지고 있는 기술적 문제점 및 한계를 극복하고 여러 고객사의 다양한 Application 제품들의 Package가 가능하도록 Reel To Reel COF Package를 ILB공정 설비 내에서 Resin 도포 작업과 Bonding 작업이 한번에 진행되도록 하기 위한 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법에 관한 것이다.The present invention relates to a reel-to-reel display semiconductor post-process bonding method using NCP resin, and more particularly, to overcome the technical problems and limitations of PKG and to package various application products of various customers Reel to Reel It relates to a reel-to-reel display semiconductor post-process bonding method using NCP resin to make the resin coating and bonding work at once in the ILB process facility for the COF package.

Description

NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법{Real-to-real display semiconductor post-process bonding method using NCP resin}Reel-to-reel display semiconductor post-process bonding method using NCP resin {Real-to-real display semiconductor post-process bonding method using NCP resin}

본 발명은 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법에 관한 것으로, 더욱 상세하게는 PKG가 가지고 있는 기술적 문제점 및 한계를 극복하고 여러 고객사의 다양한 Application 제품들의 Package가 가능하도록 Reel To Reel COF Package를 ILB공정 설비 내에서 Resin 도포 작업과 Bonding 작업이 한번에 진행되도록 하기 위한 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법에 관한 것이다.The present invention relates to a reel-to-reel display semiconductor post-process bonding method using NCP resin, and more particularly, to overcome the technical problems and limitations of PKG and to package various application products of various customers Reel to Reel It relates to a reel-to-reel display semiconductor post-process bonding method using NCP resin to make the resin coating and bonding work at once in the ILB process facility for the COF package.

일반적인 종래 기술은 도 1에 도시한 바와 같이, Film 형태의 Flexible 회로기판인 COF Film에 웨이퍼로 제작되는 IC Chip을 접합하는 Packaging 기술로서, 주로 스마트폰 및 Mobile, TV, Drive IC Display 사용되는 Package 기술이다.As shown in FIG. 1, the general prior art is a packaging technology that bonds an IC chip made of a wafer to a COF film, which is a flexible circuit board in the form of a film, and is a package technology mainly used for smartphones, mobile, TV, and drive IC displays. to be.

도 1에 도시한 바와 같이, ILB공정은 COF Film위에 Chip을 고온(400 ~ 500℃)을 가해 Bonding하는 공정이고, POT공정은 ILB공정 이후 제품에 엑포시수지(Resin)를 도포하는 공정이다.As shown in Figure 1, the ILB process is a process of bonding the chip on the COF film by applying a high temperature (400 ~ 500 ° C), and the POT process is a process of applying resin to the product after the ILB process.

해당 Process는 Display 핵심 부품의 Packaging 공정으로 액정화면 구동 IC와 전기적신호를 디스플레이 패널에 연결시켜주는 Flexible기판인 COF Film과의 접합을 통해 디스플레이를 구현할 수 있도록 해주는 역할을 한다. This process is a packaging process for key parts of the display, and plays a role in realizing a display through bonding of a liquid crystal screen driver IC and COF film, a flexible substrate that connects electrical signals to the display panel.

상기와 같은 기능을 제공하기 위하여 상기의 Main 공정을 2Step으로 진행을 하고 있다.In order to provide the above functions, the above main process is carried out in 2 steps.

한편, 도 2에 도시한 바와 같이, Sheet Type의 PCB & FPCB Flip Chip Bonder Package 기술은 PCB의 Lead(Pad)와 Chip에 형성된 Bump를 직접 연결하는 방식으로 PCB Type 의 A4용지처럼 Sheet 형태로 제작되는 방식의 Package를 말한다.On the other hand, as shown in FIG. 2, the Sheet Type PCB & FPCB Flip Chip Bonder Package technology directly connects the leads (pads) of the PCB and the bump formed on the chip. It refers to the package of the method.

구체적으로 설명하자면, 상기 도 1에 도시한 공정은 Reel To Reel COF Film Package 기술로서, 고온 400 ~ 500℃에서 접합을 진행함으로 고온에서 견딜수 있는 제품군외에는 사실상 Package기술을 적용하기에는 기술적 한계를 갖고 있다. Specifically, the process shown in FIG. 1 is a Reel To Reel COF Film Package technology, and since bonding is performed at a high temperature of 400 to 500 ° C., there are technical limitations in applying the package technology to virtually any product that can withstand high temperatures.

또한, 2 Step(ILB -> POT) 으로 공정이 진행되다보니 두 공정간 이동에 따른 샘플 Loss 및 대기 자재들의 보관에 따른 불량 발생이 증가되어 개선이 필요한 상황이다.In addition, as the process proceeds in 2 steps (ILB -> POT), sample loss due to movement between the two processes and defect occurrence due to storage of standby materials increase, so improvement is required.

그리고, 상기 도 2에 도시한 공정은 Sheet Type의 PCB & FPCB Flip Chip Bonder Package 기술로서,다양한 제품군에 대한 Package Service가 가능하나 최근 AI 및 5G 등 헬스케어/의료기용의 시장성장에 따른 고집약된 제품군 등을 대응하는 한계(예를 들어, 40 ~ 50 ump 이하 대응 불가) 인해 기존 고객사 외에도 신규 고객사들의 Needs가 지속적으로 증가되고 있는 시장 상황이다. In addition, the process shown in FIG. 2 is a Sheet Type PCB & FPCB Flip Chip Bonder Package technology, and it is possible to package service for various product groups, but it is highly concentrated according to the recent growth of the market for healthcare / medical devices such as AI and 5G Due to limitations in responding to product groups (for example, inability to respond to products below 40-50 ump), the needs of new customers in addition to existing ones are continuously increasing.

따라서, 종래 기술인 Reel To Reel COF Film PKG & Sheet Type의 PCB Flip Chip PKG가 가지고 있는 기술적 문제점 및 한계를 극복하고 여러 고객사의 다양한 Application 제품들의 Package가 가능하도록 Reel To Reel COF Package를 ILB공정 설비 내에서 Resin 도포작업과 Bonding 작업이 한번에 진행되도록 Inline 및 단일화 함과 동시에 생산성 향상과 고품질을 유지하는 기술을 필요로 하게 되었다.Therefore, to overcome the technical problems and limitations of the conventional Reel To Reel COF Film PKG & Sheet Type PCB Flip Chip PKG and to package various application products of various customers, the Reel To Reel COF Package is developed within the ILB process facility. Inline and unified so that resin application and bonding work can be done at once, technology to improve productivity and maintain high quality is needed.

(인용문헌1) 대한민국등록특허공보 제10-1633785호(Citation 1) Korean Patent Registration No. 10-1633785

따라서 본 발명은 상기와 같은 종래 기술의 문제점을 감안하여 제안된 것으로서, 본 발명의 목적은 PKG가 가지고 있는 기술적 문제점 및 한계를 극복하고 여러 고객사의 다양한 Application 제품들의 Package가 가능하도록 Reel To Reel COF Package를 ILB공정 설비 내에서 Resin 도포 작업과 Bonding 작업이 한번에 진행되도록 하기 위한 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법을 제공하고자 한다.Therefore, the present invention has been proposed in view of the problems of the prior art as described above, and an object of the present invention is to overcome the technical problems and limitations of PKG and to enable the packaging of various application products of various customers Reel To Reel COF Package It is intended to provide a reel-to-reel display semiconductor post-process bonding method using NCP resin to make the resin application and bonding work at once within the ILB process facility.

본 발명이 해결하고자 하는 과제를 달성하기 위하여,In order to achieve the problem to be solved by the present invention,

본 발명의 일실시예에 따른 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법은,The reel-to-reel display semiconductor post-process bonding method using the NCP resin according to an embodiment of the present invention,

연삭기를 이용하여 Fab 공정이 완료된 웨이퍼를 패키지하기 위하여 설정된 두께로 웨이퍼 백면을 얇게 연삭하는 연삭단계(S100);와A grinding step (S100) of thinly grinding the back surface of the wafer to a thickness set to package the wafer on which the Fab process has been completed using a grinding machine; and

상기 연삭된 웨이퍼를 수득하여 다이아몬드 블레이드를 이용하여 고속으로 회전시켜 개별 반도체 칩으로 절단하는 절단단계(S200);와A cutting step (S200) of obtaining the ground wafer and rotating it at high speed using a diamond blade to cut it into individual semiconductor chips;

NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 FPCB&COF 리드와 반도체 칩을 보호하며, 반도체 칩 내부의 단자와 FPCB&COF 리드를 접합하기 위한 언더필본딩동시단계(S300);와Underfill bonding simultaneous step (S300) to protect the FPCB & COF lead and the semiconductor chip during bonding by applying resin to the center of the FPCB & COF before bonding using the NCP bonding device, and to bond the terminal inside the semiconductor chip and the FPCB & COF lead (S300);

검사장치를 이용하여 상기 접합된 제품에 대한 외관 검사를 수행하기 위한 외관검사단계(S400);와A visual inspection step (S400) for performing an external inspection of the bonded product using an inspection device; and

패킹장치를 이용하여 외관 검사가 종료된 제품에 대한 포장을 수행하기 위한 패킹단계(S500);를 포함함으로써, 본 발명의 과제를 해결하게 된다.The object of the present invention is solved by including; a packing step (S500) for performing packaging for a product whose appearance inspection is completed using a packing device.

이상의 구성 및 작용을 지니는 본 발명에 따른 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법은,The reel-to-reel display semiconductor post-process bonding method using the NCP resin according to the present invention having the above configuration and action,

PKG가 가지고 있는 기술적 문제점 및 한계를 극복하고 여러 고객사의 다양한 Application 제품들의 Package가 가능하도록 Reel To Reel COF Package를 ILB공정 설비 내에서 Resin 도포 작업과 Bonding 작업이 한번에 진행되도록 하기 위한 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법을 제공함으로써, Inline 및 단일화 함과 동시에 생산성 향상과 고품질을 유지하는 효과를 제공하게 된다.In order to overcome the technical problems and limitations of PKG and enable the packaging of various application products of various customers, the NCP resin is used to make the resin application and bonding work proceed at once within the ILB process facility for the Reel To Reel COF Package. By providing a reel-to-reel display semiconductor post-process bonding method, it provides the effect of improving productivity and maintaining high quality while inline and unifying.

도 1은 종래 기술인 Reel To Reel COF Film Package 공정을 나타낸 개념도이다.
도 2는 종래 기술인 Sheet Type의 PCB & FPCB Flip Chip Bonder Package 공정을 나타낸 개념도이다.
도 3은 본 발명의 일실시예에 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법을 나타낸 공정도이다.
도 4는 본 발명의 일실시예에 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법 중 언더필본딩동시단계를 나타낸 예시도이다.
도 5는 본 발명의 일실시예에 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법에 의해 RFID 제품의 NCP PKG 후 레진 상태를 확인한 예시도이다.1 is a conceptual diagram showing a conventional Reel To Reel COF Film Package process.
2 is a conceptual diagram showing a conventional Sheet Type PCB & FPCB Flip Chip Bonder Package process.
3 is a process chart showing a method of bonding a reel-to-reel display semiconductor post-process using an NCP resin according to an embodiment of the present invention.
4 is an exemplary diagram illustrating a simultaneous step of underfill bonding in a method of bonding a reel-to-reel display semiconductor post-process using NCP resin according to an embodiment of the present invention.
5 is an exemplary diagram illustrating a state of resin after NCP PKG of an RFID product by a reel-to-reel display semiconductor post-process bonding method using NCP resin in an embodiment of the present invention.

이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 실시예를 상세하게 설명한다. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

그러나, 이하의 실시예는이 기술분야에서 통상적인 지식을 가진 자에게 본 발명이 충분히 이해되도록 제공되는 것으로서 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 다음에 기술되는 실시예에 한정되는 것은 아니다.However, the following embodiments are provided to those skilled in the art to sufficiently understand the present invention, and may be modified in various forms, and the scope of the present invention is limited to the following examples. it is not going to be

본 발명의 일실시예에 따른 NCP 수지를 활용한 릴 투 릴(Reel To Reel) 디스플레이 반도체 후공정 접합 방법은,In the reel-to-reel display semiconductor post-process bonding method using the NCP resin according to an embodiment of the present invention,

연삭기를 이용하여 Fab 공정이 완료된 웨이퍼를 패키지하기 위하여 설정된 두께로 웨이퍼 백면을 얇게 연삭하는 연삭단계(S100);와A grinding step (S100) of thinly grinding the back surface of the wafer to a thickness set to package the wafer on which the Fab process has been completed using a grinding machine; and

상기 연삭된 웨이퍼를 수득하여 다이아몬드 블레이드를 이용하여 고속으로 회전시켜 개별 반도체 칩으로 절단하는 절단단계(S200);와A cutting step (S200) of obtaining the ground wafer and rotating it at high speed using a diamond blade to cut into individual semiconductor chips;

NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 FPCB&COF 리드와 반도체 칩을 보호하며, 반도체 칩 내부의 단자와 FPCB&COF 리드를 접합하기 위한 언더필본딩동시단계(S300);와Underfill bonding simultaneous step (S300) to protect the FPCB & COF lead and the semiconductor chip during bonding by applying resin to the center of the FPCB & COF before bonding using the NCP bonding device, and to bond the terminal inside the semiconductor chip and the FPCB & COF lead (S300);

검사장치를 이용하여 상기 접합된 제품에 대한 외관 검사를 수행하기 위한 외관검사단계(S400);와A visual inspection step (S400) for performing an external inspection of the bonded product using an inspection device; and

패킹장치를 이용하여 외관 검사가 종료된 제품에 대한 포장을 수행하기 위한 패킹단계(S500);를 포함하는 것을 특징으로 한다.It is characterized in that it includes; a packing step (S500) for performing packaging for the product for which the appearance inspection is completed using a packing device.

이때, 상기 언더필본딩동시단계(S300)는,At this time, the underfill bonding simultaneous step (S300),

NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 압력에 의해 확산된 수지를 통해 외부 환경으로부터 FPCB&COF 리드와 반도체 칩을 보호하는 공정과,A process of applying resin to the center of the FPCB & COF before bonding using an NCP bonding device to protect the FPCB & COF lead and semiconductor chip from the external environment through the resin diffused by the pressure during bonding;

반도체 칩 내부의 단자(AU BUMP)와 FPCB&COF 리드를 NCP본딩장치에 형성된 툴을 이용하여 설정된 온도, 압력, 시간에 맞게 접합을 수행하는 공정을 동시에 수행하는 것을 특징으로 한다.It is characterized in that a process of bonding the terminal (AU BUMP) inside the semiconductor chip and the FPCB & COF lead at the same time according to the set temperature, pressure, and time using a tool formed in the NCP bonding device.

이때, 상기 NCP본딩장치를 통해, At this time, through the NCP bonding device,

Reel To Reel 방식으로 연속적인 작업이 가능하게 됨으로써, NCP Resion Unber Fill 후 Chip Bonding이 1 대의 NCP본딩장치로 수행할 수 있는 것을 특징으로 한다.By enabling continuous work in the Reel To Reel method, chip bonding can be performed with one NCP bonding device after NCP Resion Unber Fill.

이하, 본 발명에 의한 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법의 실시예를 통해 상세히 설명하도록 한다.Hereinafter, a method of bonding a reel-to-reel display semiconductor post-process using the NCP resin according to the present invention will be described in detail through an embodiment.

도 3은 본 발명의 일실시예에 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법의 공정도이다.3 is a process diagram of a reel-to-reel display semiconductor post-process bonding method using an NCP resin in an embodiment of the present invention.

도 3에 도시한 기술은 종래 기술인 Reel To Reel COF Film PKG & Sheet Type의 PCB Flip Chip PKG가 가지고 있는 기술적 문제점 및 한계를 극복하고 여러 고객사의 다양한 Application 제품들의 Package가 가능하도록 Reel To Reel COF Package를 ILB공정 설비 내에서 Resin 도포작업과 Bonding 작업이 한번에 진행되도록 Inline 및 단일화 함과 동시에 생산성 향상과 고품질을 유지하는 기술을 필요로 하게 되었으며, 본 발명에서는 이를 'Reel To Reel NCP COF Packaging' 기술이라 정의하였다.The technology shown in FIG. 3 overcomes the technical problems and limitations of the conventional Reel To Reel COF Film PKG & Sheet Type PCB Flip Chip PKG and uses the Reel To Reel COF Package to enable the packaging of various application products of various customers. Inline and unified so that resin application and bonding work can be done at once within the ILB process facility, a technology to improve productivity and maintain high quality is required. In the present invention, this is defined as 'Reel To Reel NCP COF Packaging' technology. did

도 3에 도시한 바와 같이, 상기 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법은,As shown in FIG. 3, the reel-to-reel display semiconductor post-process bonding method using the NCP resin,

연삭기를 이용하여 Fab 공정이 완료된 웨이퍼를 패키지하기 위하여 설정된 두께로 웨이퍼 백면을 얇게 연삭하는 연삭단계(S100);와A grinding step (S100) of thinly grinding the back surface of the wafer to a thickness set to package the wafer on which the Fab process has been completed using a grinding machine; and

상기 연삭된 웨이퍼를 수득하여 다이아몬드 블레이드를 이용하여 고속으로 회전시켜 개별 반도체 칩으로 절단하는 절단단계(S200);와A cutting step (S200) of obtaining the ground wafer and rotating it at high speed using a diamond blade to cut it into individual semiconductor chips;

NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 FPCB&COF 리드와 반도체 칩을 보호하며, 반도체 칩 내부의 단자와 FPCB&COF 리드를 접합하기 위한 언더필본딩동시단계(S300);와Underfill bonding simultaneous step (S300) to protect the FPCB & COF lead and the semiconductor chip during bonding by applying resin to the center of the FPCB & COF before bonding using the NCP bonding device, and to bond the terminal inside the semiconductor chip and the FPCB & COF lead (S300);

검사장치를 이용하여 상기 접합된 제품에 대한 외관 검사를 수행하기 위한 외관검사단계(S400);와A visual inspection step (S400) for performing an external inspection of the bonded product using an inspection device; and

패킹장치를 이용하여 외관 검사가 종료된 제품에 대한 포장을 수행하기 위한 패킹단계(S500);를 포함하는 것을 특징으로 한다.It is characterized in that it includes; a packing step (S500) for performing packaging for the product for which the appearance inspection is completed using a packing device.

구체적으로 설명하자면, 연삭단계(S100)는 연삭기를 이용하여 Fab 공정이 완료된 웨이퍼를 패키지하기 위하여 설정된 두께로 웨이퍼 백면을 얇게 연삭하는 공정이다.Specifically, the grinding step (S100) is a process of thinly grinding the back surface of the wafer to a thickness set in order to package the wafer on which the Fab process has been completed using a grinding machine.

이후, 절단단계(S200)는 상기 연삭된 웨이퍼를 수득하여 다이아몬드 블레이드를 이용하여 고속으로 회전시켜 개별 반도체 칩으로 절단하는 공정이다.Thereafter, in the cutting step (S200), the ground wafer is obtained and rotated at high speed using a diamond blade to be cut into individual semiconductor chips.

여기까지는 일반적인 공정에 해당하지만, 하기의 언더필 본딩 동시 공정은 본 발명의 특이한 솔루션에 해당하고, 이를 통해 본 발명에서 해결하고자 하는 과제를 해결할 수가 있게 되는 것이다.Up to this point corresponds to a general process, but the simultaneous underfill bonding process corresponds to a unique solution of the present invention, and through this, it is possible to solve the problem to be solved in the present invention.

즉, 상기 언더필본딩동시단계(S300)는 NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 FPCB&COF 리드와 반도체 칩을 보호하며, 반도체 칩 내부의 단자와 FPCB&COF 리드를 접합하기 위한 공정이다.That is, in the underfill bonding simultaneous step (S300), resin is applied to the center of the FPCB & COF before bonding using an NCP bonding device to protect the FPCB & COF lead and the semiconductor chip during bonding, and to bond the terminal inside the semiconductor chip and the FPCB & COF lead. to be.

구체적으로, 상기 언더필본딩동시단계(S300)는,Specifically, the underfill bonding simultaneous step (S300),

NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 압력에 의해 확산된 수지를 통해 외부 환경으로부터 FPCB&COF 리드와 반도체 칩을 보호하는 공정과,A process of applying resin to the center of the FPCB & COF before bonding using an NCP bonding device to protect the FPCB & COF lead and semiconductor chip from the external environment through the resin diffused by the pressure during bonding;

반도체 칩 내부의 단자(AU BUMP)와 FPCB&COF 리드를 NCP본딩장치에 형성된 툴을 이용하여 설정된 온도, 압력, 시간에 맞게 접합을 수행하는 공정을 동시에 수행하는 것이다.It is to simultaneously perform the process of bonding the terminal (AU BUMP) inside the semiconductor chip and the FPCB & COF lead according to the set temperature, pressure, and time using the tool formed in the NCP bonding device.

즉, 언더필(Under Fill) 공정은 본딩 전 FPCB&COF(회로기판) 중앙에 수지를 도포하여 본딩시 압력에 의해 확산된 수지를 통해 외부 환경으로부터 FPCB&COF 리드와 반도체 칩을 보호하는 공정인 것이다.That is, the underfill process is a process of applying resin to the center of the FPCB&COF (circuit board) before bonding to protect the FPCB&COF lead and semiconductor chip from the external environment through the resin diffused by the pressure during bonding.

그리고, FCB(Filp Chip Bonding) 공정은 반도체 칩 내부의 단자(AU BUMP)와 FPCB&COF 리드를 NCP본딩장치에 형성된 툴을 이용하여 설정된 온도, 압력, 시간에 맞게 접합을 수행하는 공정을 동시에 수행하게 되는 것이다.In addition, the FCB (Filp Chip Bonding) process simultaneously performs the process of bonding the terminal (AU BUMP) inside the semiconductor chip and the FPCB & COF lead according to the set temperature, pressure, and time using a tool formed in the NCP bonding device. will be.

요약하자면, 1 대의 NCP본딩장치를 이용하여 상기한 언더필(Under Fill) 공정과 FCB(Filp Chip Bonding) 공정을 진행하게 되는 것이다.In summary, the above-described underfill process and FCB (Filp Chip Bonding) process are performed using one NCP bonding device.

즉, 도 4에 도시한 바와 같이, 한 대의 설비에서 NCP Resion Unber Fill 후 Chip Bonding이 이루어지는데, 핵심 솔루션은 Reel To Reel 방식으로 연속적인 작업 가능한 것이다.That is, as shown in FIG. 4, chip bonding is performed after NCP Resion Unber Fill in one facility, and the key solution is to be able to work continuously in the Reel To Reel method.

구체적으로, 상기 NCP본딩장치를 통해, Specifically, through the NCP bonding device,

Reel To Reel 방식으로 연속적인 작업이 가능하게 됨으로써, NCP Resion Unber Fill 후 Chip Bonding이 한 대의 NCP본딩장치로 수행할 수 있는 것을 특징으로 한다.By enabling continuous work in the Reel To Reel method, chip bonding can be performed with one NCP bonding device after NCP Resion Unber Fill.

이후, 외관검사단계(S400)는 검사장치를 이용하여 상기 접합된 제품에 대한 외관 검사를 수행하기 위한 공정이다.Thereafter, the exterior inspection step (S400) is a process for performing an exterior inspection of the bonded product using an inspection device.

예를 들어, 조립 공정이 완료된 제품의 외관에 이물질 부착, 조립불량, 흠집 등의 외관 검사를 진행하는 것이다.For example, external appearance inspections are performed on the appearance of products after assembly processes are completed, such as attachment of foreign substances, poor assembly, and scratches.

이후, 패킹단계(S500)는 패킹장치를 이용하여 외관 검사가 종료된 제품에 대한 포장을 수행하기 위한 공정이다.Thereafter, the packing step (S500) is a process for performing packaging on the product for which the appearance inspection has been completed using a packing device.

예를 들어, 모든 제조 공정이 완료된 제품을 출하하기 위하여 정전기, 습도 등으로부터 보호시키기 위한 개별 포장하는 공정인 것이다.For example, it is a process of individually packaging to protect products from static electricity, humidity, etc. in order to ship products for which all manufacturing processes have been completed.

지금까지 설명한 본 발명인 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법은 도 5에 도시한 바와 같이, 실제 RFID 제품에 대하여 NCP PKG를 적용하여 추가적인 공정 없이 생산이 가능함을 확인하였다.As shown in FIG. 5, it was confirmed that the reel-to-reel display semiconductor post-process bonding method using the NCP resin, which is the present invention described so far, can be produced without additional processes by applying the NCP PKG to the actual RFID product.

이때, 예를 들어, 디스펜싱 공정 -> 얼라인먼트 공정 -> 프레스/큐링(Press/Curing) 공정 -> 특정 제품 NCP PKG 후 레진 상태를 확인하는 공정을 제공하게 된다.At this time, for example, a dispensing process -> an alignment process -> a press/curing process -> a process of checking the resin state after a specific product NCP PKG is provided.

또한, 본 발명인 Reel To Reel NCP COF Package 공정은 Reel To Reel COF Film PKG의 ILB공정 설비 내에서 Resin 도포작업과 Bonding 작업이 한번에 진행되도록 하여 Inline과 공정 단일화할 수 있게 된다.In addition, the Reel To Reel NCP COF Package process of the present invention allows the resin coating and bonding operations to be performed at once within the ILB process facility of the Reel To Reel COF Film PKG, so that the inline and process can be unified.

즉, NCP Resin Under Fill 후, Chip Bonding이 이루어지는 Process 방식의 기술인 것이다.In other words, it is a process method technology in which chip bonding is performed after NCP Resin Under Fill.

기존 Reel To Reel COF Film Package 의 ILB & Potting 두 개의 공정을 하나의 공정(설비)에서 Under Fill 및 Bonding 작업을 동시에 진행하여 작업시간을 단축하여 생산효율성 향상과 균일한 고품질 제품을 유지할 수 있으며, 기존 COF PKG의 방식으로 작업할 수 없던 방식의 Model들을 Reel To Reel NCP COF Package 기술을 통해 가능한 장점을 제공하게 된다.The two processes of ILB & Potting of the existing Reel To Reel COF Film Package can be simultaneously performed under filling and bonding in one process (facility) to reduce working time, improve production efficiency and maintain uniform high-quality products. Models that could not work in the COF PKG method will be provided with possible advantages through the Reel To Reel NCP COF Package technology.

그리고, 현재 전 세계에서 생산되고 있는 Reel To Reel COF Film PKG는 모두 ILB설비(공정)에서 조립을 한 후, POT설비(공정)에서 수지를 도포하는 제조방식으로 생산을 하고 있는 System이다.And, the Reel To Reel COF Film PKG currently being produced all over the world is a system that is produced in the manufacturing method of assembling in the ILB facility (process) and then applying resin in the POT facility (process).

그러나, 본 발명의 경우에는 Reel To Reel COF Film Package 의 ILB설비(공정)에서 상기한 핵심 2가지 공정을 한번에 할 수 있는 Inline 기술을 제공하게 되었다.However, in the case of the present invention, inline technology that can perform the above two core processes at once in the ILB facility (process) of the Reel To Reel COF Film Package has been provided.

그리고, AI 및 5G 시대에 발맞춰 다양한 Application 필요한 제품군의 Package Service가능한 장점을 제공하게 된다.In addition, in line with the era of AI and 5G, it will provide the advantages of package service for various application-needed product groups.

이상에서와 같은 내용의 본 발명이 속하는 기술분야의 당업자는 본 발명의 기술적 사상이나 필수적 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시 예들은 모든 면에서 예시된 것이며 한정적인 것이 아닌 것으로서 이해해야만 한다. Those skilled in the art to which the present invention pertains as described above will understand that it can be implemented in other specific forms without changing the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above are illustrative in all respects and should be understood as non-limiting ones.

본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구 범위의 의미 및 범위 그리고 그 등가 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.The scope of the present invention is indicated by the following claims rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be construed as being included in the scope of the present invention. do.

S100 : 연삭단계
S200 : 절단단계
S300 : 언더필본딩동시단계
S400 : 외관검사단계
S500 : 패킹단계S100: grinding step
S200: cutting step
S300: Underfill bonding simultaneous step
S400: Appearance inspection step
S500: Packing step

Claims (3)

NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법에 있어서,
연삭기를 이용하여 Fab 공정이 완료된 웨이퍼를 패키지하기 위하여 설정된 두께로 웨이퍼 백면을 얇게 연삭하는 연삭단계(S100);와
상기 연삭된 웨이퍼를 수득하여 다이아몬드 블레이드를 이용하여 고속으로 회전시켜 개별 반도체 칩으로 절단하는 절단단계(S200);와
NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 FPCB&COF 리드와 반도체 칩을 보호하며, 반도체 칩 내부의 단자와 FPCB&COF 리드를 접합하기 위한 언더필본딩동시단계(S300);와
검사장치를 이용하여 상기 접합된 제품에 대한 외관 검사를 수행하기 위한 외관검사단계(S400);와
패킹장치를 이용하여 외관 검사가 종료된 제품에 대한 포장을 수행하기 위한 패킹단계(S500);를 포함하는 것을 특징으로 하되,
상기 언더필본딩동시단계(S300)는,
NCP본딩장치를 이용하여 본딩 전에 FPCB&COF 중앙에 수지를 도포하여 본딩시 압력에 의해 확산된 수지를 통해 외부 환경으로부터 FPCB&COF 리드와 반도체 칩을 보호하는 공정과,
반도체 칩 내부의 단자(AU BUMP)와 FPCB&COF 리드를 NCP본딩장치에 형성된 툴을 이용하여 설정된 온도, 압력, 시간에 맞게 접합을 수행하는 공정을 동시에 수행하는 것을 특징으로 하며,
상기 NCP본딩장치를 통해,
Reel To Reel 방식으로 연속적인 작업이 가능하게 됨으로써, NCP Resion Unber Fill 후 Chip Bonding이 1 대의 NCP본딩장치로 수행할 수 있는 것을 특징으로 하며,
Reel To Reel COF Film Package 의 ILB & Potting 두 개의 공정을 상기 1 대의 NCP본딩장치에서 Under Fill 및 Bonding 작업을 동시에 진행하여 작업시간을 단축시킬 수 있는 것을 특징으로 하는 NCP 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법.


In the reel-to-reel display semiconductor post-process bonding method using NCP resin,
A grinding step (S100) of thinly grinding the back surface of the wafer to a thickness set to package the wafer on which the Fab process has been completed using a grinding machine; and
A cutting step (S200) of obtaining the ground wafer and rotating it at high speed using a diamond blade to cut it into individual semiconductor chips;
Underfill bonding simultaneous step (S300) to protect the FPCB & COF lead and the semiconductor chip during bonding by applying resin to the center of the FPCB & COF before bonding using the NCP bonding device, and to bond the terminal inside the semiconductor chip and the FPCB & COF lead (S300);
A visual inspection step (S400) for performing an external inspection of the bonded product using an inspection device; and
It is characterized by comprising a; packing step (S500) for performing packaging for the product for which the appearance inspection is completed using a packing device,
In the simultaneous step of underfill bonding (S300),
A process of applying resin to the center of the FPCB & COF before bonding using an NCP bonding device to protect the FPCB & COF lead and semiconductor chip from the external environment through the resin diffused by the pressure during bonding;
Characterized in that the process of bonding the terminal (AU BUMP) inside the semiconductor chip and the FPCB & COF lead at the same time according to the set temperature, pressure, and time using a tool formed in the NCP bonding device,
Through the NCP bonding device,
By enabling continuous work in the Reel To Reel method, chip bonding can be performed with one NCP bonding device after NCP Resion Unber Fill,
Reel to Reel COF Film Package reel-to-reel display using NCP resin, characterized in that the work time can be shortened by simultaneously underfilling and bonding the two processes of ILB & Potting in the one NCP bonding device Semiconductor post-process bonding method.


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JP2010021216A (en) 2008-07-08 2010-01-28 Kogukofu:Kk Method for bonding flexible printed board
WO2020213502A1 (en) * 2019-04-15 2020-10-22 株式会社新川 Mounting device

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JP5614217B2 (en) * 2010-10-07 2014-10-29 デクセリアルズ株式会社 Buffer film for multichip mounting
KR101633785B1 (en) 2014-07-24 2016-06-27 스테코 주식회사 In-line cure apparatus for TCP COF package
US10468384B2 (en) * 2017-09-15 2019-11-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same

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Publication number Priority date Publication date Assignee Title
JP2010021216A (en) 2008-07-08 2010-01-28 Kogukofu:Kk Method for bonding flexible printed board
WO2020213502A1 (en) * 2019-04-15 2020-10-22 株式会社新川 Mounting device

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