KR102482967B1 - Display device - Google Patents

Abstract

The present invention relates to a display device, and the display device according to the present invention includes a substrate including a display area in which a plurality of pixels are defined, a plurality of gate wires disposed between a plurality of pixels in the display area, and a plurality of pixels in the display area. A plurality of transistors disposed between and connected to a plurality of gate wires, a first red color filter extending in the same direction as the gate wires and disposed to overlap the plurality of transistors on the plurality of transistors, and an area other than a plurality of pixels in the display area and a black matrix disposed on the first red color filter, leakage current due to light incident on the active layer of the turned-off transistor may be effectively suppressed.

Description

Display device {DISPLAY DEVICE}

The present invention relates to a display device, and more particularly, to a display device in which leakage current is prevented from being generated when a transistor disposed between a plurality of pixels is turned off.

Recently, as we enter the information age in earnest, the display field that visually expresses electrical information signals has developed rapidly. Device) has been developed and is rapidly replacing the existing cathode ray tube (CRT).

Specific examples of such a flat panel display include a liquid crystal display (LCD), an organic light emitting display (OLED), an electrophoretic display (EPD), a plasma display (PDP), and an electrowetting display (EWD). there is.

A plurality of pixels are defined in a display area where an image of the display device is displayed. A black matrix is disposed in an area of the display area excluding a plurality of pixels, and elements such as transistors disposed under the black matrix are prevented from being visually recognized by a user. Light may be incident on an active layer of a transistor disposed between a plurality of pixels. Light incident on the active layer may be external light incident from the outside of the display device or internal light generated inside the display device. In this case, a photo current may flow through the active layer due to light incident on the active layer, and therefore, a leakage current may be generated in the transistor even though the transistor is in an off state.

The problem to be solved by the present invention is to prevent photocurrent from flowing through the active layer of the transistor by arranging a color filter that absorbs light overlapping with the wavelength band of light absorbed by the transistor on top of a transistor disposed between a plurality of pixels. To provide a display device.

Another object to be solved by the present invention is to provide a display device in which leakage current due to light generated in a transistor is reduced by increasing a thickness of a color filter disposed on top of a transistor disposed between a plurality of pixels.

Another problem to be solved by the present invention is to arrange an additional dummy color filter between a red color filter disposed on a transistor disposed between a plurality of pixels and a black matrix disposed on the red color filter, and thus the transistor by light incident It is to provide a display device that reduces generation of leakage current.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

In order to solve the above problems, a display device according to an embodiment of the present invention, a substrate including a display area in which a plurality of pixels are defined, a plurality of gate wires disposed between a plurality of pixels in the display area, and a display area A plurality of transistors disposed between a plurality of pixels and connected to a plurality of gate wires, a first red color filter extending in the same direction as the gate wires and disposed to overlap the plurality of transistors on the plurality of transistors, corresponding to the plurality of pixels and a black matrix disposed in an area other than a plurality of pixels of the color filter and display area disposed on the display area and disposed on the first red color filter, wherein the thickness of the first red color filter is disposed to correspond to the plurality of pixels. thicker than the thickness of the color filter. Accordingly, generation of leakage current in the active layer due to light incident on the active layer of the transistor can be suppressed.

In order to solve the above problems, a display device according to another embodiment of the present invention includes a substrate including a display area in which a plurality of pixels are defined, a plurality of gate wires disposed between a plurality of pixels in the display area, and a display A plurality of transistors disposed between a plurality of pixels in the region, connected to a plurality of gate wires and including an active layer, extending in the same direction as the gate wires, disposed to overlap the plurality of transistors on the plurality of transistors, and an active layer A color filter having an absorption wavelength band overlapping the absorption wavelength band of , a red color filter disposed in each of a plurality of pixels, a green color filter and a blue color filter disposed in an area other than a plurality of pixels among the display area, and disposed on the color filter and a black matrix disposed on the color filter, wherein the thickness of the color filter is greater than the thickness of the red color filter, the thickness of the green color filter, and the thickness of the blue color filter. Accordingly, abnormal operation of the transistor due to leakage current generated by light incident on the active layer of the turned-off transistor can be prevented.

Other embodiment specifics are included in the detailed description and drawings.

According to the present invention, the flow of photocurrent in the active layer due to light incident on the active layer of the transistor disposed between the plurality of pixels is reduced.

In addition, the present invention has an effect of improving leakage current flow when a transistor disposed between a plurality of pixels is in an off state.

Effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a plan view of a display device according to an exemplary embodiment of the present invention.
FIG. 2 is an enlarged view of area A of FIG. 1 .
FIG. 3 is a cross-sectional view taken along line III-III' of FIG. 2 .
4A to 4B are graphs of light transmittance of a first red color filter of a display device and an active layer of a transistor according to an exemplary embodiment of the present invention.
5 is a plan view of a display device according to another exemplary embodiment of the present invention.
FIG. 6 is a cross-sectional view taken along line VI-VI' of FIG. 5 .
7 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention.
8 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention.
9 is a plan view of a display device according to another exemplary embodiment of the present invention.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative, so the present invention is not limited to the details shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts.

When an element or layer is referred to as “on” another element or layer, it includes all cases where another element or layer is directly on top of another element or another layer or other element intervenes therebetween.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Like reference numbers designate like elements throughout the specification.

The size and thickness of each component shown in the drawings are shown for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated components.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, and as those skilled in the art can fully understand, various interlocking and driving operations are possible, and each embodiment can be implemented independently of each other. It may be possible to implement together in an association relationship.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view of a display device according to an exemplary embodiment of the present invention. In FIG. 1 , among various components of the display device 100, a first substrate 110, a data driver 120, a gate driver 130, a plurality of signal lines DL and GL, and a plurality of links are illustrated for convenience of description. Only wiring (DLL, GLL) is shown.

Referring to FIG. 1 , the first substrate 110 is a base member for supporting various components of the display device 100 and may be made of an insulating material. For example, the first substrate 110 may be made of a plastic material such as glass or polyimide, but is not limited thereto.

A display area AA and a non-display area NA surrounding the display area AA may be defined on the first substrate 110 . The display area AA is an area where an image is actually displayed on the display device 100. A plurality of pixels PX may be defined in the display area AA, and a plurality of pixels PX may be defined in the display area AA. A black matrix may be disposed in an area other than the . A plurality of pixels are disposed in the display area AA. The plurality of pixels PX is a minimum unit that emits light, and may include a red pixel, a green pixel, and a blue pixel. Each of the plurality of pixels may be connected to signal lines DL and GL, that is, a gate line GL and a data line DL. The plurality of pixels PX are defined in an area where the black matrix is not disposed, and is an area where an image is displayed. The black matrix is a layer made of a material that does not transmit light, and various elements disposed in areas other than the plurality of pixels PX may be prevented from being recognized by a user by the black matrix.

A display unit, various driving elements for driving the display unit, and a plurality of signal lines DL and GL may be disposed in the display area AA. For example, the display unit may be a liquid crystal display unit that drives liquid crystal by an electric field generated by a voltage applied to a pixel electrode and a common electrode. However, the display unit is not limited thereto, and the display unit may be an organic light emitting display unit composed of an organic light emitting element including an anode, an organic layer, and a cathode. In addition, various driving elements such as transistors and capacitors for driving the display unit may be disposed in the display area AA. Although the display device 100 has been described as a liquid crystal display device in this specification, it is not limited thereto, and the display device 100 may also be an organic light emitting display device.

The plurality of signal lines DL and GL may include a plurality of data lines DL and a plurality of gate lines GL. The plurality of data lines DL extend in the first direction and transmit data signals to the plurality of pixels PX. The plurality of gate lines GL extend in the second direction and transmit gate signals to the plurality of pixels PX. In this case, the first direction and the second direction may be directions perpendicular to each other, but are not limited thereto.

A plurality of transistors 140 may be disposed between a plurality of pixels PX in the display area AA. A black matrix may be disposed in an area of the display area AA except for the plurality of pixels PX, and a plurality of transistors 140 may be disposed under the black matrix. In this case, each of the plurality of transistors 140 may be connected to each of the plurality of data lines DL and each of the plurality of gate lines GL. Each of the plurality of transistors 140 may be connected to each of the plurality of data lines DL to transmit data signals to the plurality of pixels PX. In addition, each of the plurality of transistors 140 may be connected to each of the plurality of gate lines GL to transmit gate signals to the plurality of pixels PX.

The non-display area NA is an area in which an image is not displayed and is an area surrounding the display area AA. Various components for driving a plurality of pixels disposed in the display area AA may be disposed in the non-display area NA. For example, as shown in FIG. 1 , the data driver 120, the gate driver 130, and the link wires GLL and DLL connected to the various signal wires GL and DL of the display area AA, etc. It may be disposed in the non-display area NA. The data driver 120 and the gate driver 130 may be bonded to a plurality of pads formed in the non-display area NA. The plurality of pads may be connected to the link wires GLL and DLL, and may be connected to the signal wires DL and GL through the link wires GLL and DLL. Accordingly, each of the plurality of pads may be electrically connected to each of the plurality of pixels.

The data driver 120 is a component for processing data for displaying an image and a driving signal for processing the data, and is a component for supplying signals to a plurality of pixels of the display area AA. The data driver 120 supplies data signals to a plurality of pixels in the display area AA through various wires disposed in the non-display area NA. Although FIG. 1 illustrates a plurality of data drivers 120 , the present invention is not limited thereto, and one data driver 120 may be disposed on the first substrate 110 .

Referring to FIG. 1 , the data driver 120 includes a base film 121, a driver IC 122, and a plurality of data pads. The base film 121 is a film supporting the data driver 120 . The base film 121 may be made of an insulating material, for example, may be made of an insulating material having flexibility. The driving IC 122 is a component that processes a data voltage for displaying an image and a driving signal for processing the data voltage. The driving IC 122 is disposed on the first substrate 110 of the display device 100 in a manner such as COG (Chip On Glass), COF (Chip On Film), TCP (Tape Carrier Package), or the like. It can be. In FIG. 1 , for convenience of explanation, the data driver 120 is illustrated as a COF type mounted on the base film 121 , but is not limited thereto.

The gate driver 130 may output a gate signal under the control of the timing controller and select a pixel to which the data voltage is charged through the gate link line GLL. The gate driver 130 may sequentially supply gate signals to the gate lines GL using shift registers. The gate driver 130 includes a base film 131 , a driving IC 132 and a plurality of gate pads. The base film 131 is a film supporting the gate driver 130 . The base film 131 may be made of an insulating material, for example, may be made of an insulating material having flexibility. The driving IC 132 is a component that processes a gate voltage for displaying an image and a driving signal for processing it. The driver IC 132 is disposed on the first substrate 110 of the display device 100 in a manner such as COG (Chip On Glass), COF (Chip On Film), TCP (Tape Carrier Package), or the like. It can be. In FIG. 1 , for convenience of explanation, the gate driver 130 is illustrated as a COF method mounted on the base film 131 , but is not limited thereto. Also, although the number of gate driving units 130 is illustrated as being plural, the present invention is not limited thereto, and one gate driving unit 130 may be disposed on the first substrate 110 .

Hereinafter, a more detailed description of the color filter disposed to correspond to the plurality of pixels PX of the display area AA and the first red color filter disposed on the transistor 140 disposed between the plurality of pixels PX 2 to 4B are also referred to for explanation.

FIG. 2 is an enlarged view of area A of FIG. 1 . FIG. 3 is a cross-sectional view taken along line III-III' of FIG. 2 . 4A to 4B are graphs of light transmittance of a first red color filter of a display device and an active layer of a transistor according to an exemplary embodiment of the present invention. In FIG. 2 , only the plurality of pixels PX, the first red color filter 191 , the second red color filter 192 , the green color filter 193 , and the blue color filter 194 are illustrated for convenience of explanation.

Referring to FIGS. 2 and 3 , a plurality of pixels PX are defined on the first substrate 110 . The plurality of pixels PX is a minimum unit that emits light, and may include a red pixel PXR, a green pixel PXG, and a blue pixel PXB. Red pixels PXR, green pixels PXG, and blue pixels PXB may be sequentially disposed in display area AA. That is, the red pixel PXR, the green pixel PXG, and the blue pixel PXB are arranged in order, and the red pixel PXR, the green pixel PXG, and the blue pixel PXB are again adjacent to the blue pixel PXB. deployment can continue. The plurality of pixels PX in FIG. 2 are arranged in the order of red pixels PXR, green pixels PXG, and blue pixels PXB, but are not limited thereto and may be arranged in a different order.

The red pixel PXR is a pixel capable of emitting red light, and the second red color filter 192 is disposed to correspond to the red pixel PXR. The second red color filter 192 includes a red pigment or a red dye and may have a red color. That is, when light is incident on the second red color filter 192, only red light, which is light in a wavelength range corresponding to red, is transmitted and emitted, and light in a wavelength range corresponding to colors other than red is transmitted through the second red color filter (192). 192) is absorbed by

In addition, the green pixel PXG is a pixel capable of emitting green light, and a green color filter 193 is disposed to correspond to the green pixel PXG. The green color filter 193 includes a green pigment or a green dye and may have a green color. That is, when light is incident on the green color filter 193, only green light, which is light in a wavelength band corresponding to green, is transmitted and emitted, and light in a wavelength band corresponding to colors other than green is passed through the green color filter 193. Absorbed.

In addition, the blue pixel PXB is a pixel capable of emitting blue light, and a blue color filter 194 is disposed to correspond to the blue pixel PXB. The blue color filter 194 includes a blue pigment or blue dye and may have a blue color. That is, when light is incident on the blue color filter 194, only blue light, which is light in a wavelength band corresponding to blue, is transmitted and emitted, and light in a wavelength band corresponding to colors other than blue is passed through the blue color filter 194. Absorbed.

A plurality of transistors 140 are disposed on the first substrate 110 in a region between the plurality of pixels PX where the plurality of gate lines GL are disposed. Specifically, referring to FIG. 3 , a transistor 140 is disposed on the first substrate 110 . The transistor 140 may include a gate electrode 141, an active layer 142 disposed on the gate electrode 141, and a source electrode 143 and a drain electrode 144 disposed on the active layer 142. there is.

Specifically, a gate electrode 141 is formed on the first substrate 110 of the display area AA. A gate insulating layer 111 is formed on the gate electrode 141 , and an active layer 142 in which a channel of the transistor 140 is formed is formed on the gate insulating layer 111 . The gate insulating layer 111 may electrically insulate the active layer 142 and the gate electrode 141 from each other. The gate insulating layer 111 is made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx), and may be a single layer or a plurality of layers thereof, but is not limited thereto. A source electrode 143 and a drain electrode 144 of the transistor 140 may be formed on the active layer 142 . The transistor 140 may be a bottom gate type transistor 140 as shown in FIG. 3, but the stacked structure of the transistor 140 is not limited thereto, and a top gate type transistor. It could be.

Each of the plurality of transistors 140 may be electrically connected to a plurality of gate lines GL. Specifically, although the plurality of gate lines GL are not shown in FIG. 3 for convenience of explanation, the plurality of gate lines GL may be disposed between the plurality of pixels PX and electrically connected to each of the plurality of transistors 140 . can The plurality of transistors 140 may receive gate signals from each of the plurality of gate lines GL and transmit the gate signals to each of the plurality of pixels PX.

A first passivation layer 112 is disposed on the plurality of transistors 140 . The first passivation layer 112 is an insulating layer for protecting the transistor 140 . The first passivation layer 112 may be made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). However, it is not limited thereto, and the first passivation layer 112 may be omitted according to design.

A planarization layer 113 is disposed on the first passivation layer 112 . The planarization layer 113 is a layer for planarizing an upper portion of elements such as the transistor 140 disposed in the display area AA. The planarization layer 113 may be an insulating layer made of an organic material.

A common electrode 150 is disposed on the planarization layer 113 . Specifically, the common electrode 150 is an electrode for forming an electric field in liquid crystal included in the display device 100 . The common electrode 150 may be disposed on the planarization layer 113 in an area where the plurality of pixels PX are defined. The common electrode 150 may be made of a transparent conductive material such as indium tin oxide (ITO), but is not limited thereto.

A second passivation layer 114 is disposed on the planarization layer 113 and the common electrode 150 . The second passivation layer 114 is an insulating layer for protecting devices such as the transistor 140 . The second passivation layer 114 may be made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx), or may be made of the same material as the first passivation layer 112 .

A pixel electrode 160 may be disposed on the second passivation layer 114 . The pixel electrode 160 is an electrode for forming an electric field in the liquid crystal layer 170 by forming an electric field together with the common electrode 150 . That is, the pixel electrode 160 and the common electrode 150 form an electric field, and the liquid crystal layer 170 can be driven by the electric field.

A liquid crystal layer 170 is disposed on the second passivation layer 114 and the pixel electrode 160 . The liquid crystal layer 170 is a layer containing liquid crystal and can transmit or block light by an electric field. Specifically, an electric field may be formed by the common electrode 150 and the pixel electrode 160, and the liquid crystal layer 170 may be driven by the electric field to block or transmit light.

A second substrate 115 is disposed on the liquid crystal layer 170 . The second substrate 115 is a base member for supporting various components of the display device 100 and may be made of an insulating material. The second substrate 115 includes a black matrix 180 disposed under the second substrate 115, a first red color filter 191, a second red color filter 192, a green color filter 193, and a blue color filter. A filter 194 or the like can be supported. The second substrate 115 may be made of the same material as the first substrate 110 . For example, the second substrate 115 may be made of a plastic material such as glass or polyimide, but is not limited thereto.

A black matrix 180 is disposed below the second substrate 115 . The black matrix 180 may block elements disposed below the black matrix 180 from being viewed in the display area AA. The black matrix 180 is disposed in an area excluding the plurality of pixels PX in the display area AA. That is, the black matrix 180 is disposed on the entire display area AA except for the red pixel PXR, the green pixel PXG, and the blue pixel PXB, and the gate wiring (which is disposed between the plurality of pixels PX) GL) and elements such as the transistor 140 may be blocked from being viewed.

A green color filter 193 is disposed below the second substrate 115 . The green color filter 193 is a pixel capable of emitting green light and is disposed to correspond to the green pixel PXG.

A blue color filter 194 is disposed below the second substrate 115 . The blue color filter 194 is a pixel capable of emitting blue light and is disposed to correspond to the blue pixel PXB.

A first red color filter 191 is disposed below the black matrix 180 . The first red color filter 191 refers to a color filter including red dye or red pigment. The first red color filter 191 may be disposed between the black matrix 180 and the liquid crystal layer 170 and overlap the transistor 140 . That is, the first red color filter 191 may be disposed on the transistor 140 and have a width corresponding to the entire transistor 140 .

The first red color filter 191 may be integrally formed with the second red color filter 192 . The first red color filter 191 may be continuously connected to the second red color filter 192 . That is, the first red color filter 191 may be formed of the same material as the second red color filter 192 through the same process. Specifically, a black matrix 180 may be formed under the second substrate 115 . Subsequently, a green color filter 193 and a blue color filter 194 may be formed under the second substrate 115 . Each of the green color filter 193 and the blue color filter 194 may be formed under the second substrate 115 to correspond to each of the green pixel PXG and the blue pixel PXB. Also, the first red color filter 191 and the second red color filter 192 may be simultaneously formed under the second substrate 115 through the same process. Accordingly, the first red color filter 191 and the second red color filter 192 may be made of the same material, and may be continuously connected thereto to be integrally disposed. In addition, the thickness of the first red color filter 191 is the thickness of the second red color filter 192, the thickness of the green color filter 193, and the blue color filter 194 disposed corresponding to the plurality of pixels PX. may be thicker than the thickness of That is, the first red color filter 191 disposed below the black matrix 180 may be thicker than the color filters 192 , 193 , and 194 disposed to correspond to the plurality of pixels PX.

Referring to FIGS. 2 and 3 , ends of the green color filter 193 and the blue color filter 194 are disposed between the black matrix 180 and the first red color filter 191 . That is, portions of the green color filter 193 and the blue color filter 194 contacting the black matrix 180 are disposed between the black matrix 180 and the first red color filter 191 . Accordingly, the ends of the green color filter 193 and the blue color filter 194 are disposed below the black matrix 180 at a position where the black matrix 180 and the green pixel PXG and the blue pixel PXB contact each other. It can be. As described above, the black matrix 180 is first formed under the second substrate 115, and after the black matrix 180 is formed, the green color filter 193 and the blue color filter 194 are respectively applied to the green pixel ( PXG) and the blue pixel PXB. Accordingly, portions of the green color filter 193 and the blue color filter 194 contacting the black matrix 180 may be formed below the black matrix 180 . In addition, the first red color filter 191 may be formed after the green color filter 193 and the blue color filter 194 are formed. An end portion of the first red color filter 191 contacting the green pixel PXG and the blue pixel PXB may be disposed below each of the green color filter 193 and the blue color filter 194 . Thus, the ends of the green color filter 193 and the blue color filter 194, that is, the portion in contact with the black matrix 180 may be disposed between the black matrix 180 and the first red color filter 191. Referring to FIGS. 4A and 4B , a wavelength band λ2 of light absorbed by the first red color filter 191 overlaps a wavelength band λ1 of light absorbed by the active layer 142 of the transistor 140. Specifically, the graph of FIG. 4A is a graph of transmittance with respect to a wavelength band of light incident on the active layer 142 of the transistor 140 . Also, the graph of FIG. 4B is a graph of transmittance with respect to a wavelength band of light incident on the first red color filter 191 .

Referring to FIG. 4A , light of various wavelengths may be incident to the active layer 142 of the transistor 140 . At this time, the absorption rate of light in the absorption wavelength band λ1 of the active layer 142 of the transistor 140 may be higher than the absorption rate of light in the wavelength band excluding the absorption wavelength band λ1. The absorption wavelength band λ1 of the active layer 142 means a wavelength band of light having a transmittance of 10% or less among light incident on the active layer 142 . That is, when light in the absorption wavelength band λ1 is incident on the active layer 142 , only 10% or less of the light is transmitted, and the remaining light is absorbed by the active layer 142 . An absorption wavelength band (λ1) of the active layer 142 may be 380 nm to 530 nm.

Referring to FIG. 4B , light of various wavelengths may be incident to the first red color filter 191 . In this case, the absorption rate of light in the absorption wavelength band λ2 of the first red color filter 191 may be higher than the absorption rate of light in the wavelength band excluding the absorption wavelength band λ2. The absorption wavelength band λ2 of the first red color filter 191 means a wavelength band of light having a transmittance of 10% or less among light incident on the first red color filter 191 . That is, when light in the absorption wavelength band λ2 is incident on the first red color filter 191, less than 10% of the light is transmitted, and the remaining light is absorbed by the first red color filter 191. An absorption wavelength band λ2 of the first red color filter 191 may be 430 nm to 550 nm.

In this case, a wavelength band λ1 of light absorbed by the active layer 142 of the transistor 140 overlaps a band λ2 absorbed by the first red color filter 191 . Specifically, the absorption wavelength band λ1 of the active layer 142 is 380 nm to 530 nm, and the absorption wavelength band λ2 of the first red color filter 191 is 430 nm to 550 nm. Accordingly, the absorption wavelength band λ1 of the active layer 142 overlaps with a wavelength band of 430 nm to 530 nm. That is, a wavelength band of light absorbed by the active layer 142 may be similar to a wavelength band of light absorbed by the first red color filter 191 .

Referring to FIG. 3 , light incident on the first red color filter 191 may pass through the first red color filter 191 and be reflected by the black matrix 180 . For example, the first light L1 refers to light incident on the first red color filter 191 . The first light L1 may be light incident from the outside of the display device 100 , or may be light generated inside the display device 100 . That is, natural light incident from the outside of the display device 100 may be incident on the first red color filter 191 . Also, when the display device 100 is a liquid crystal display device, the display device 100 may include a backlight. Light generated from the backlight may pass through the liquid crystal layer 170 and be viewed as an image outside the display device 100 . A backlight may be disposed under the first substrate 110 . Light generated by the backlight may be incident as first light L1 to the first red color filter 191 inside the display device 100 .

Also, the second light L2 refers to light that is reflected from the black matrix 180 after passing through the first red color filter 191 . The first light L1 is incident on the surface of the first red color filter 191, passes through the first red color filter 191, and enters the black matrix 180. The first light L1 may be reflected as the second light L2 on the surface of the black matrix 180 . The black matrix 180 is made of a material that absorbs light in all wavelength bands, but a small amount of light incident on the black matrix 180 may be reflected from the surface of the black matrix 180 due to a difference in refractive index.

The intensity of light of a specific wavelength band included in the second light L2 may be less than the intensity of light of a specific wavelength band included in the first light L1. When the first light L1 includes the light of the absorption wavelength band λ2 of the first red color filter 191, the light corresponding to the absorption wavelength band λ2 among the first light L1 is the first red color filter. A significant portion can be absorbed by the color filter 191 . Accordingly, the intensity of the light corresponding to the absorption wavelength band λ2 of the second light L2 may be less than 10% of the intensity of the light corresponding to the absorption wavelength band λ2 of the first light L1.

Also, the first light L1 may be incident on the first red color filter 191 and pass through the first red color filter 191 . The first light L1 may be reflected as the second light L2 on the lower surface of the black matrix 180 . The second light L2 may be reflected from the lower surface of the black matrix 180 , pass through the first red color filter 191 , and be incident on the active layer 142 of the transistor 140 . The transistor 140 shown in FIG. 3 is a bottom-gate type transistor, and thus, the active layer 142 may be located on the top. Therefore, the gate electrode 141, the source electrode 143, and the drain electrode 144 are not disposed above the channel region where the channel of the active layer 142 of the transistor 140 is formed, and the first passivation layer 112 ), a planarization layer 113, a second passivation layer 114 and a liquid crystal layer 170 are disposed. Accordingly, the second light L2 reflected from the first red color filter 191 sequentially passes through the liquid crystal layer 170 , the second passivation layer 114 , the planarization layer 113 , and the first passivation layer 112 . to be incident on the active layer 142.

When light is incident on the active layer 142 of the transistor 140, leakage current due to the light may flow even though the transistor 140 is in an off state. Specifically, when the transistor 140 is turned off, photocurrent may flow through the active layer 142 due to light incident on the active layer 142 . The active layer 142 may be made of a semiconductor, and electrons included in the active layer 142 may be excited by light incident on the active layer 142 . The active layer 142 may absorb most of light corresponding to an absorption wavelength band λ1 of the active layer 142 among light incident on the active layer 142 . As described above, when light corresponding to the absorption wavelength band (λ1) of the active layer 142 is incident on the active layer 142, only 10% of the light is transmitted through the active layer 142 and the can go outside. That is, the active layer 142 may absorb 90% or more of the light corresponding to the absorption wavelength band λ1 of the active layer 142 . When more than 90% of the incident light is absorbed by the active layer 142, electrons included in the active layer 142 can be excited by the light absorbed by the active layer 142, and thus the transistor 140 Even in the turned-off state, photocurrent may flow through the active layer 142 . Accordingly, light corresponding to a wavelength band of light having a light transmittance of 10% or less, that is, light corresponding to an absorption wavelength band λ1 of the active layer 142 may be a main cause of a phenomenon in which light current flows through the active layer 142 . When photo current flows through the active layer 142 , leakage current may flow between the source electrode 143 and the drain electrode 144 of the transistor 140 . Accordingly, the plurality of pixels PX of the display device 100 may be undesirably driven.

At this time, in the case of a conventional display device, a red color filter, a green color filter, or a blue color filter is not disposed between the transistor and the black matrix. Specifically, the red color filter, the green color filter, and the blue color filter disposed to correspond to the plurality of pixels may not extend to an area where the black matrix is disposed. Accordingly, only the black matrix is disposed above the transistor disposed between the plurality of pixels, and no color filter is disposed between the black matrix and the transistor.

Light incident from the outside of the display device or generated inside the display device may be reflected from the lower surface of the black matrix and then incident to the active layer. The black matrix absorbs most of the light, but some of the light incident to the black matrix is reflected from the lower surface of the black matrix and may be incident to the active layer. Light incident to the active layer may include light corresponding to an absorption wavelength band (lambda 1) of the active layer. Accordingly, photocurrent may flow through the active layer, and leakage current may be generated in the turned-off transistor.

Each of the red color filter, the green color filter, and the blue color filter has different light transmittances for light in various wavelength bands. In the case of a red color filter, the transmittance of red light among the light of various wavelengths is higher than the transmittance of light of a color other than red. In the case of a green color filter, transmittance of light having a green color is higher than transmittance of light having a color other than green. And, in the case of a blue color filter, transmittance of light having a blue color is higher than transmittance of light having a color other than blue. For example, referring to FIG. 4B , an absorption wavelength band λ1 of the first red color filter 191 may be 430 nm to 550 nm. As such, an absorption wavelength band of the red color filter may be 430 nm to 550 nm. Similarly, absorption wavelength bands of the green color filter may be 380 nm to 440 nm and 630 nm to 650 nm. And, an absorption wavelength band of the blue color filter may be 580 nm to 750 nm. Therefore, the absorption wavelength band of the active layer of the transistor may have a smaller wavelength band overlapping each of the green color filter and the blue color filter than the absorption wavelength band of the red color filter. An absorption wavelength band of the active layer overlaps an absorption wavelength band of the green color filter in a range of 430 nm to 440 nm, and does not overlap with an absorption wavelength band of the blue color filter. Unlike this, the absorption wavelength band of the active layer overlaps with the absorption wavelength band of the red color filter in a band of 430 nm to 530 nm.

Accordingly, the green color filter and the blue color filter may not effectively absorb light corresponding to an absorption wavelength band of the active layer compared to the red color filter. In the case of a conventional display device, photocurrent may be generated in the active layer by light passing through a green color filter or a blue color filter disposed above a transistor and incident on the active layer, and thus leakage current may flow in the transistor. there is.

Unlike this, in the display device 100 according to an exemplary embodiment of the present invention, a color filter is disposed above the transistor 140 disposed between the plurality of pixels PX. In this case, each of the red color filter, the green color filter, and the blue color filter has a different light transmittance for light of various wavelengths. In the case of a red color filter, the transmittance of red light among the light of various wavelengths is higher than the transmittance of light of a color other than red. In the case of a green color filter, transmittance of light having a green color is higher than transmittance of light having a color other than green. And, in the case of a blue color filter, transmittance of light having a blue color is higher than transmittance of light having a color other than blue. For example, referring to FIG. 4B , an absorption wavelength band λ1 of the first red color filter 191 may be 430 nm to 550 nm. As such, an absorption wavelength band of the red color filter may be 430 nm to 550 nm. Similarly, absorption wavelength bands of the green color filter may be 380 nm to 440 nm and 630 nm to 650 nm. And, an absorption wavelength band of the blue color filter may be 580 nm to 750 nm. Therefore, the absorption wavelength band of the active layer of the transistor may have a smaller wavelength band overlapping each of the green color filter and the blue color filter than the absorption wavelength band of the red color filter. An absorption wavelength band of the active layer overlaps an absorption wavelength band of the green color filter in a range of 430 nm to 440 nm, and does not overlap with an absorption wavelength band of the blue color filter. Unlike this, the absorption wavelength band of the active layer overlaps with the absorption wavelength band of the red color filter in a band of 430 nm to 530 nm.

Accordingly, the display device 100 according to an exemplary embodiment of the present invention disposes the first red color filter 191 on top of the transistor 140 disposed between the plurality of pixels PX, so that the transistor 140 The first red color filter 191 absorbs the light corresponding to the absorption wavelength band λ1 of the active layer 142, and effectively absorbs the light incident to the active layer 142 corresponding to the absorption wavelength band λ1. can reduce Specifically, the first red color filter 191 overlaps all of the plurality of transistors 140 disposed between the plurality of pixels PX and is disposed above the plurality of transistors 140 . In addition, the thickness of the first red color filter 191 corresponds to the color filters disposed corresponding to the plurality of pixels PX, that is, the thickness of the second red color filter 192, the thickness of the green color filter 193, and the blue color filter 192. It may be thicker than the thickness of the color filter 194 . Accordingly, most of the light incident to the plurality of transistors 140 may be light reflected from the first red color filter 191 . At this time, the first red color filter 191 absorbs 90 degrees of light corresponding to the absorption wavelength band λ1 of the active layer 142 of the transistor 140, that is, the wavelength band of light causing leakage current in the transistor 140. % or more can be absorbed in advance. As described above, the absorption wavelength band λ1 of the active layer 142 overlaps the absorption wavelength band λ2 of the first red color filter 191 . That is, the first red color filter 191 absorbs 90% or more of light corresponding to a wavelength band absorbed by the active layer 142, and reflects most of the light in a wavelength band not absorbed by the active layer 142. Accordingly, in the light reflected by the first red color filter 191 and incident on the active layer 142 , light in the absorption wavelength band λ1 mainly absorbed by the active layer 142 may not exist. Thus, light reflected by the first red color filter 191 and incident on the active layer 142 is not absorbed by the active layer 142 and can be mostly reflected. Accordingly, the light absorbed by the active layer 142 is reduced, and thus, the occurrence of excitation of electrons in the active layer 142 can be reduced. The generation of photo current in the active layer 142 and the generation of leakage current in the transistor 140 due to this generation can be reduced, and accordingly, the image display quality of the display device 100 can be improved.

5 is a plan view of a display device according to another exemplary embodiment of the present invention. FIG. 6 is a cross-sectional view taken along line VI-VI' of FIG. 5 . The display device 500 of FIGS. 5 to 6 is substantially the same as the display device 100 of FIGS. 1 to 4B except that the black matrix 580 and the first red color filter 591 are different. , duplicate descriptions are omitted.

Referring to FIGS. 5 and 6 , the black matrix 580 includes a first portion 580a and a second portion 580b disposed on both sides of the first portion 580a. In this case, the first part 580a and the second part 580b of the black matrix 580 extend in the same direction as the plurality of gate lines GL. Both the first portion 580a and the second portion 580b extend in the same direction as the plurality of gate lines GL, and the second portion 580b is disposed on both sides of the first portion 580a. Accordingly, the second portion 580b is disposed on both sides of the first portion 580a and is disposed adjacent to the plurality of pixels PX.

The thickness d1 of the first portion 580a is smaller than the thickness d2 of the second portion 580b. The first thickness d1 of the first portion 580a, which is the portion of the black matrix 580 extending in the same direction as the plurality of gate lines GL, is smaller than the second thickness d2 of the second portion 580b. As a result, the black matrix 580 may include a trench structure with a concave central portion. That is, since the thickness d1 of the first portion 580a, which is the central portion of the black matrix 580, is smaller than the thickness d2 of the second portion 580b disposed on both sides of the central portion, the black matrix 580 The central portion may be concave in a direction in which the second substrate 115 is disposed. Since the black matrix 580 has a trench structure with a concave central portion, the thickness of the first red color filter 591 is greater than that of the portion 591b that does not overlap with the central portion of the black matrix 580. The portion 591a overlapping the central portion may be thicker. That is, the thickness d3 of the first red color filter 591a overlapping the first portion 580a of the black matrix 580 is the first red color filter overlapping the second portion 580b of the black matrix 580. It may be thicker than the thickness d4 of the filter 591b. The first red color filter 591 may be formed below the black matrix 580 after the black matrix 580, the green color filter 193, and the blue color filter 194 are formed. Accordingly, in the process of forming the first red color filter 591, as a relatively large amount of red color filter material is disposed in the concave area of the black matrix 580, it overlaps with the first portion 580a of the black matrix 580. The first red color filter 591a may be thicker than the first red color filter 591b overlapping the second portion 580b of the black matrix 580 .

In the display device 500 according to another embodiment of the present invention, leakage current of the transistor 140 is further reduced by the black matrix 580 including the first portion 580a and the second portion 580b. can make it Specifically, the first thickness d1 of the first portion 580a of the black matrix 580 may be smaller than the second thickness d2 of the second portion 580b. Thus, the thickness d3 of the first red color filter 591a overlapping the first portion 580a of the black matrix 580 is the first red color filter overlapping the second portion 580b of the black matrix 580. It may be thicker than the thickness d4 of the filter 591b. In addition, the thickness d3 of the first red color filter 591a overlapping the first portion 580a is obtained when the thicknesses of the first portion 580a and the second portion 580b of the black matrix 580 are the same. Compared to the thickness of the first red color filter 591, it may be more increased. When the thickness d3 of the first red color filter 591a overlapping the first portion 580a is large, the absorption wavelength of the first red color filter 591 among the light incident on the first red color filter 591 Light in the band λ2 may be more effectively absorbed by the first red color filter 591 . That is, when light of the same intensity is incident on the first red color filter 591, a greater amount of light is absorbed by the first red color filter 591 as the thickness of the first red color filter 591 is thicker. can Therefore, among the light that passes through the first red color filter 591, is reflected from the black matrix 180 and is incident on the active layer 142, the light in the absorption wavelength band λ1 of the active layer 142 is more reduced. can Accordingly, generation of photocurrent in the active layer 142 due to excitation of electrons in the active layer 142 can be effectively prevented, and thus leakage current of the transistor 140 can be reduced.

7 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention. The display device 700 of FIG. 7 is substantially the same as the display device 100 of FIGS. 1 to 4B except that the black matrix 780 and the first red color filter 791 are different. is omitted.

Referring to FIG. 7 , the black matrix 780 includes a first portion 780a and a second portion 780b disposed on both sides of the first portion 780a. In this case, the first part 780a and the second part 780b of the black matrix 780 extend in the same direction as the plurality of gate lines GL, and the second part 780b extends in the same direction as the first part 780a. placed on both sides. Accordingly, the second portion 780b is disposed on both sides of the first portion 780a and is disposed adjacent to the plurality of pixels PX.

In this case, the thickness d1 of the first portion 780a is greater than the thickness d2 of the second portion 780b. In the portion of the black matrix 780 extending in the same direction as the plurality of gate lines GL, the first thickness d1 of the first portion 780a is smaller than the second thickness d2 of the second portion 780b. As a result, a protrusion protruding toward the first red color filter 791 may be included. The protrusion may refer to the first part 780a of the black matrix 780 . The thickness d1 of the first portion 780a, which is the central portion of the black matrix 780, is greater than the thickness d2 of the second portion 780b disposed on both sides of the first portion 780a. The first portion 780a of the matrix 780 may protrude toward the first red color filter 791 . In this case, the protruding portion, that is, the first portion 780a is located above the first red color filter 791 and is covered by the first red color filter 791 . That is, the lower portion of the portion of the first portion 780a protruding from the second portion 780b is entirely covered by the first red color filter 791 .

In the display device 700 according to another embodiment of the present invention, the black matrix 780 includes a first portion 780a and a second portion 780b that is thinner than the first portion 780a, so that the black matrix 780 is black. Generation of leakage current of the transistor 140 disposed below the matrix 780 can be effectively reduced. Specifically, when the thickness d1 of the first portion 780a of the black matrix 780 and the thickness d2 of the second portion 780b are the same, the first red color overlaps with the first portion 780a. A thickness of the filter 791a may be smaller than a thickness of the first red color filter 791b overlapping the second portion 780b. In disposing the first red color filter 791 below the black matrix 780, the first red color filter 791a may be formed low in the first portion 780a, which is the central portion of the black matrix 780. there is. In this case, light reflected by the first red color filter 791 may not sufficiently absorb light in an absorption wavelength band λ1 of the active layer 142 . In contrast, when the thickness d1 of the first portion 780a of the black matrix 780 is greater than the thickness d2 of the second portion 780b, the first red color filter overlaps the first portion 780a. The thickness of 791a may be further increased, and thus, the first red color filter 791a overlapping the first portion 780a may protrude toward the liquid crystal layer 170 . Accordingly, the first red color filter 791 may more effectively absorb light in an absorption wavelength band λ1 of the active layer 142 . Light reflected from the first red color filter 791 may hardly include light in the absorption wavelength band λ1 and may be incident to the active layer 142 . Thus, the amount of electrons excited in the active layer 142 can be reduced, and the amount of photocurrent that can be generated in the active layer 142 can be reduced.

8 is a cross-sectional view of a display device according to another exemplary embodiment of the present invention. Since the display device 800 of FIG. 8 is substantially the same as the display device 100 of FIGS. 1 to 4B except for including a dummy color filter 895, duplicate description is omitted.

Referring to FIG. 8 , a dummy color filter 895 is disposed between the black matrix 180 and the first red color filter 191 . The dummy color filter 895 means a separate color filter spaced apart from the green color filter 193 and the blue color filter 194 . Specifically, the dummy color filter 895 extends in the same direction as the extension direction of the plurality of gate lines GL under the central portion of the black matrix 180 and is disposed. In this case, the dummy color filter 895 is spaced apart from the ends of the green color filter 193 and the blue color filter 194 disposed between the black matrix 180 and the first red color filter 191 . That is, the green color filter 193 and the blue color filter 194 and the dummy color filter 895 whose ends are disposed below the black matrix 180 may be separated from each other.

The dummy color filter 895 may be disposed to be surrounded by the black matrix 180 and the first red color filter 191 . Specifically, the dummy color filter 895 may be made of the same material as the green color filter 193 or the blue color filter 194 . When the dummy color filter 895 is made of the same material as the green color filter 193 or the blue color filter 194, the green color filter 193 or blue color filter 194 and the dummy color filter 895 are disposed at the same time. It can be. That is, the green color filter 193 overlapping the green pixel PXG or the blue color filter 194 and the dummy color filter 895 overlapping the blue pixel PXB are simultaneously formed through the same process. can After the dummy color filter 895 is formed, a first red color filter 191 may be disposed below the dummy color filter 895 . Therefore, the upper part of the dummy color filter 895 contacts the black matrix 180, and the lower part of the dummy color filter 895 contacts the first red color filter 191. Accordingly, the entire dummy color filter 895 is black. It may be surrounded by the matrix 180 and the first red color filter 191 .

When the dummy color filter 895 is not disposed between the black matrix 180 and the first red color filter 191, the thickness of the first red color filter 191 overlapping the central portion of the black matrix 180 may be thinner than the thickness of other parts. In this case, the first red color filter 191 may not effectively absorb light in the absorption wavelength band λ1 of the active layer 142 because of its thin thickness. Accordingly, electrons in the active layer 142 are generated by light in an absorption wavelength band λ1 of the active layer 142, which includes light reflected from the first red color filter 191 and incident on the active layer 142. The degree of excitation can be increased. Accordingly, photo current flowing through the active layer 142 may increase, and leakage current of the transistor 140 may increase.

At this time, the display device 800 according to another embodiment of the present invention includes a dummy color filter 895 to effectively prevent leakage current from flowing in the transistor 140 disposed between the plurality of pixels PX. can do. Specifically, a dummy color filter 895 may be disposed between the black matrix 180 and the first red color filter 191 . By disposing the dummy color filter 895, the thickness of the first red color filter 191 can be increased, and the first red color filter 191 overlapping the dummy color filter 895 moves toward the liquid crystal layer 170. can be extruded. Accordingly, light in the absorption wavelength band λ1 included in light reflected from the first red color filter 191 and incident on the active layer 142 may be reduced. Accordingly, the amount of photocurrent flowing through the active layer 142 may be reduced, and leakage current of the transistor 140 may be reduced.

In the display device 800 according to another embodiment of the present invention, the dummy color filter 895 is made of the same material as the green color filter 193, thereby further reducing the amount of leakage current flowing through the transistor 140. can Specifically, light incident on the first red color filter 191 may pass through the first red color filter 191 and be incident on a dummy color filter 895 made of the same material as the green color filter 193 . Accordingly, light reflected from the lower surface of the black matrix 180 and reflected to the outside of the first red color filter 191 may not include light in an absorption wavelength band of the green color filter 193 . The green color filter 193 absorbs light in a band of 380 nm to 440 nm and 630 nm to 650 nm, which are absorption wavelength bands of the green color filter 193 . At this time, the absorption wavelength band λ1 of the active layer 142 and the absorption wavelength band of the green color filter 193 overlap at 380 nm to 440 nm. Accordingly, since the dummy color filter 895 is disposed, light incident to the active layer 142 may not further include light in the 380 nm to 440 nm band. Accordingly, the amount of photo current that can flow through the active layer 142 can be further reduced, and the amount of leakage current that can flow through the transistor 140 can be reduced.

9 is a plan view of a display device according to another exemplary embodiment of the present invention. The display device 900 of FIG. 9 is substantially the same as the display device 800 of FIG. 8 except that the dummy color filter 995 is different, and thus duplicate descriptions are omitted.

Referring to FIG. 9 , a dummy color filter 995 is disposed between red pixels PXR. In detail, the dummy color filter 995 may be disposed on both sides of the gate line GL among the plurality of pixels PX and disposed between adjacent red pixels PXR. The dummy color filter 995 may be disposed between the black matrix 180 and the first red color filter 191, and may be disposed apart from the green color filter 193 and the blue color filter 194. In this case, the dummy color filter 995 may be formed in a circular shape, but is not limited thereto. The dummy color filter 995 disposed between the red pixels PXR is disposed between the black matrix 180 and the first red color filter 191 to form a black matrix 180 and the first red color filter 191. The whole can be surrounded by

The dummy color filter 995 may be made of the same material as the green color filter 193 or the blue color filter 194 . When the dummy color filter 895 is made of the same material as the green color filter 193 or the blue color filter 194, the green color filter 193 or blue color filter 194 and the dummy color filter 895 are disposed at the same time. It can be.

In the display device 900 according to another embodiment of the present invention, the thickness of the first red color filter 191 can be effectively increased by disposing the dummy color filter 995 between the red pixels PXR. . Specifically, the first red color filter 191 and the second red color filter 192 may be integrally formed. The first red color filter 191 and the second red color filter 192 may be continuously connected. That is, the second red color filters 192 disposed corresponding to adjacent red pixels PXR with the plurality of gate lines GL interposed therebetween and the second red color filters 192 disposed therebetween. One red color filter 191 may be simultaneously formed through the same process. In this case, a thickness of one portion of the first red color filter 191 disposed between the second red color filters 192 may be smaller than that of another portion of the first red color filter 191 . In this case, the dummy color filter 995 may be disposed between adjacent red pixels PXR with the plurality of gate lines GL interposed therebetween, and overlap the first red color filter ( 191) may be increased. Also, the first red color filter 191 overlapping the dummy color filter 995 may protrude toward the liquid crystal layer 170 . Accordingly, light in the absorption wavelength band λ1 included in light reflected from the first red color filter 191 and incident on the active layer 142 may be reduced. Accordingly, the amount of photocurrent flowing through the active layer 142 may be reduced, and leakage current of the transistor 140 may be reduced.

A display device according to embodiments of the present invention can be described as follows.

A display device according to an exemplary embodiment includes a substrate including a display area in which a plurality of pixels are defined, a plurality of gate wires disposed between the plurality of pixels in the display area, and disposed between the plurality of pixels in the display area. A plurality of transistors connected to a plurality of gate wires, a first red color filter extending in the same direction as the gate wires and disposed to overlap the plurality of transistors on the plurality of transistors, a color filter disposed corresponding to the plurality of pixels, and a display area It is disposed in an area excluding a plurality of pixels and includes a black matrix disposed on the first red color filter, and the thickness of the first red color filter may be thicker than the thickness of the color filter disposed corresponding to the plurality of pixels. .

According to another feature of the present invention, a wavelength band of light absorbed by the active layer of the transistor may overlap a wavelength band of light absorbed by the first red color filter.

According to another feature of the present invention, in the display device, the color filters disposed to correspond to the plurality of pixels further include a second red color filter, a green color filter, and a blue color filter, and a green color filter and a blue color filter. An end of may be disposed between the black matrix and the first red color filter.

According to another feature of the present invention, the second red color filter may be continuously connected to the first red color filter.

According to another feature of the present invention, the display device may further include a dummy color filter disposed between the black matrix and the first red color filter and spaced apart from the green color filter and the blue color filter.

According to another feature of the present invention, the dummy color filter may be made of the same material as the green color filter or the blue color filter.

According to another feature of the present invention, the dummy color filter may extend in the same direction as the gate line.

According to another feature of the present invention, the dummy color filter may be disposed between red pixels disposed on both sides of the gate line among a plurality of pixels.

According to another feature of the present invention, the black matrix may include a first portion having a first thickness and a second portion disposed on both sides of the first portion and having a second thickness greater than the first thickness. .

According to another feature of the present invention, the first part and the second part may extend in the same direction as the plurality of gate lines.

According to another feature of the present invention, the thickness of the first red color filter overlapping the first portion may be greater than the thickness of the first red color filter overlapping the second portion.

According to another feature of the present invention, the black matrix may include a first portion having a first thickness and a second portion disposed on both sides of the first portion and having a second thickness smaller than the first thickness. .

A display device according to another embodiment of the present invention includes a substrate including a display area in which a plurality of pixels are defined, a plurality of gate wires disposed between the plurality of pixels in the display area, and disposed between the plurality of pixels in the display area. , a plurality of transistors connected to a plurality of gate wires and including an active layer, extending in the same direction as the gate wires, arranged so as to overlap the plurality of transistors on the plurality of transistors, and an absorption wavelength overlapping with the absorption wavelength band of the active layer A color filter having a band, a red color filter disposed in each of a plurality of pixels, a green color filter and a blue color filter, and a black matrix disposed in an area excluding a plurality of pixels among display areas and disposed on the color filter, The thickness of the color filter may be thicker than the thickness of the red color filter, the thickness of the green color filter, and the thickness of the blue color filter. According to another feature of the present invention, the display device includes a red color filter disposed in each of a plurality of pixels; A color filter and a blue color filter may be further included, and portions of the green color filter and the blue color filter contacting the black matrix may be disposed between the black matrix and the color filter.

According to another feature of the present invention, the color filter may be made of the same material as the red color filter.

According to another feature of the present invention, the display device may further include a dummy color filter disposed to be surrounded by the black matrix and the color filter.

According to another feature of the present invention, the dummy color filter may be made of the same material as the green color filter or the blue color filter.

According to another feature of the present invention, the black matrix may have a trench structure with a concave central portion.

According to another feature of the present invention, the black matrix may have a protrusion that protrudes toward the color filter and is covered by the color filter.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and may be variously modified without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed according to the claims below, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100, 500, 700, 800, 900: display device
110: first substrate
111: gate insulating layer
112: first passivation layer
113: planarization layer
114: second passivation layer
115: second substrate
120: data driving unit
121: base film
122: driving IC
130: gate driver
131: base film
132: driving IC
140: transistor
141: gate electrode
142: active layer
143: source electrode
144: drain electrode
150: common electrode
160: pixel electrode
170: liquid crystal layer
180, 580, 780: black matrix
191, 591, 791: first red color filter
192 second red color filter
193: green color filter
194: blue color filter
580a, 780a: first part
580b, 780b: second part
591a, 791a: a first red color filter overlapping the first portion;
591b, 791b: first red color filter overlapping the second part
895, 995: dummy color filter
DLL: data link wiring
DL: data wire
GLL: gate link wiring
GL: gate wiring
PX: pixels
PXR: red pixel
PXG: green pixel
PXB: blue pixel
AA: display area
NA: non-display area
L1: first light
L2: 2nd light

Claims (19)

a substrate including a display area in which a plurality of pixels are defined;
a plurality of gate wires disposed between the plurality of pixels in the display area;
a plurality of transistors disposed between the plurality of pixels in the display area and connected to the plurality of gate wires;
a first red color filter extending in the same direction as the gate line and disposed on the plurality of transistors to overlap the plurality of transistors;
a color filter arranged to correspond to the plurality of pixels; and
a black matrix disposed in an area of the display area excluding the plurality of pixels and disposed on the first red color filter;
The first red color filter overlaps the black matrix between the plurality of pixels of the display area;
A thickness of the first red color filter is greater than a thickness of the color filters disposed corresponding to the plurality of pixels. According to claim 1,
A wavelength band of light absorbed by the active layer of the transistor overlaps a wavelength band of light absorbed by the first red color filter. According to claim 1,
The color filters arranged to correspond to the plurality of pixels include a second red color filter, a green color filter, and a blue color filter;
Ends of the green color filter and the blue color filter are disposed between the black matrix and the first red color filter. According to claim 3,
The second red color filter is continuously connected to the first red color filter. According to claim 3,
and a dummy color filter disposed between the black matrix and the first red color filter and spaced apart from the green color filter and the blue color filter. According to claim 5,
The dummy color filter is made of the same material as the green color filter or the blue color filter. According to claim 5,
The dummy color filter extends in the same direction as the gate line. According to claim 5,
The dummy color filter is disposed between red pixels disposed on both sides of the gate line among the plurality of pixels. According to claim 1,
The black matrix,
a first portion having a first thickness; and
and a second portion disposed on both sides of the first portion and having a second thickness greater than the first thickness. According to claim 9,
The first part and the second part extend in the same direction as the plurality of gate lines. According to claim 9,
A thickness of the first red color filter overlapping the first portion is greater than a thickness of the first red color filter overlapping the second portion. According to claim 1,
The black matrix,
a first portion having a first thickness; and
and a second portion disposed on both sides of the first portion and having a second thickness smaller than the first thickness. a substrate including a display area in which a plurality of pixels are defined;
a plurality of gate wires disposed between the plurality of pixels in the display area;
a plurality of transistors disposed between the plurality of pixels in the display area, connected to the plurality of gate wires, and including an active layer;
a color filter extending in the same direction as the gate line, disposed on the plurality of transistors to overlap with the plurality of transistors, and having an absorption wavelength band overlapping with an absorption wavelength band of the active layer;
a red color filter, a green color filter, and a blue color filter disposed in each of the plurality of pixels; and
a black matrix disposed in an area of the display area excluding the plurality of pixels and disposed on the color filter;
the color filter overlaps the black matrix between the plurality of pixels of the display area;
The thickness of the color filter is thicker than the thickness of the red color filter, the thickness of the green color filter, and the thickness of the blue color filter, the display device. According to claim 13,
Wherein portions of the green color filter and the blue color filter in contact with the black matrix are disposed between the black matrix and the color filter. According to claim 14,
The color filter is made of the same material as the red color filter. According to claim 14,
The display device of claim 1, further comprising a dummy color filter disposed to be surrounded by the black matrix and the color filter. According to claim 16,
The dummy color filter is made of the same material as the green color filter or the blue color filter. According to claim 13,
The black matrix has a trench structure with a concave central portion. According to claim 13,
The black matrix has a protrusion that protrudes toward the color filter and is covered by the color filter.

Images