JP4892946B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device suitable for use in displaying various information.

  Conventionally, various electro-optical devices such as a liquid crystal device, an organic electroluminescence display device, a plasma display device, and a field emission display device are known.

  In an active matrix liquid crystal device having a switching element such as a TFT element as an example of such an electro-optical device, a TFT element or the like provided in a display region is electrostatically generated due to static electricity or noise generated during assembly. In order to prevent destruction, an input protection circuit is often provided at a predetermined position on the array substrate side.

  For example, in order to realize such an object, a MOS type transistor in which a conductive line is arranged on the outer periphery of the display region and the source region and the gate are short-circuited between the conductive line and the scan electrode, and the gate and drain region are short-circuited A liquid crystal display device having an input protection circuit in which a MOS transistor is connected in series is known (see, for example, Patent Document 1).

  In addition, in order to realize such an object, a dual gate grounded as an electrostatic breakdown preventing circuit at an external circuit connection terminal used for inputting an external signal to the scanning line driving circuit and the data line driving circuit. There is known an electro-optical device in which type TFTs are electrically connected (see, for example, Patent Document 2).

  Further, an active matrix liquid crystal display panel including an input protection circuit that protects the active matrix driving circuit from an abnormal potential generated by static electricity is known (see, for example, Patent Document 3).

  As a color liquid crystal device, a wide range of colors can be displayed by providing a complementary color cyan (C) subpixel in addition to the primary color R, G, and B subpixels. A possible image display device is described in Patent Document 4, for example.

Japanese Patent Laid-Open No. 7-92448 JP 2001-166334 A JP-A-5-307191 JP 2001-306003 A

  SUMMARY An advantage of some aspects of the invention is that it provides an electro-optical device and an electronic apparatus that can reduce static electricity defects such as a protection element constituting an electrostatic protection circuit.

In one aspect of the present invention, an electro-optical device includes a plurality of wirings that supply a signal supplied from a semiconductor device to a pixel electrode electrically connected via a switching element, and a configuration for the electro-optical device from static electricity. An electrostatic protection circuit for protecting an element, wherein the electrostatic protection circuit includes a plurality of first protection elements having one ends electrically connected to end portions of the plurality of wirings, and the plurality of first protection elements. Each of the other ends of the protective elements is electrically connected in parallel, the common wiring extending in a direction intersecting the direction in which the plurality of wirings extend, and the common wiring is electrically connected, One end of the plurality of first protective elements is connected to the folded wiring after extending in the intersecting direction beyond the first protective element provided on the outermost side, and one end is connected to the folded wiring. A second protection element and the second protection element Having a wiring constant potential which is electrically connected to the other end of the protection device.

  In the above electro-optical device, a signal (image signal, gate signal, etc.) supplied from a semiconductor device such as a driver IC is applied to a pixel electrode electrically connected via a switching element such as a TFD element or a TFT element. A plurality of wirings to be supplied and an electrostatic protection circuit that protects the components for the electro-optical device from static electricity are configured.

  In a preferred example, when a TFT element is applied as the switching element, the plurality of wirings can be, for example, a source line from which an image signal is output or a gate line from which a gate signal is output. Thereby, the position corresponding to the pixel electrode can be used as the display area of the electro-optical panel.

  The electrostatic protection circuit includes a plurality of first protection elements electrically connected to each of the plurality of wirings, and a common wiring formed by electrically connecting each of the plurality of first protection elements in parallel. And a second protective element electrically connected to the common wiring, and a constant potential wiring (for example, grounding wiring) electrically connected to the second protective element. In a preferred example, the constant potential wiring is preferably arranged so as to surround the display area of the electro-optical panel in order to enhance the effect of shielding static electricity. For this reason, the plurality of first protection elements electrically connected in parallel to the common wiring are connected in series to the second protection element and the constant potential wiring through the common wiring. As described above, since the second protection element is arranged at a position where the plurality of first protection elements are electrically bundled, the electrostatic protection circuit includes the second protection element, the plurality of first protection elements, and the like. Static electricity is removed by the two-stage configuration. In addition, with such a configuration, the magnitude of leakage current generated in each of the plurality of first protection elements can be reduced as compared with the case where each of the first protection elements is directly electrically connected to the constant potential wiring. It is possible to reduce the power consumption of the electro-optical device.

  In a preferred example, the first protection element and the second protection element can be TFT elements. With this configuration, in the manufacturing process of the electro-optical device, for example, static electricity jumps into the constant potential wiring from the outside, and a certain amount of charge is accumulated in the constant potential wiring, causing a discharge, and the discharged current Flows to the second protection element side, the switch of the second protection element is turned on, and this current further flows to the plurality of first protection element sides via the common wiring. As a result, the switches of the first protection elements are turned on, and the current follows a path opposite to the above path, and finally flows to a constant potential wiring and is grounded (grounded). On the other hand, when static electricity is generated on the pixel electrode side serving as the display region, current corresponding to the static electricity flows to the plurality of first protection element sides through the plurality of wirings. Thereby, the switch of each 1st protection element will be in an ON state, and this electric current will flow into the 2nd protection element side further via a common wiring. As a result, the switch of the second protection element is turned on, and the current finally flows to the constant potential wiring and is grounded (grounded). By such an action of the electrostatic protection circuit, it is possible to prevent damage to components for the electro-optical device, for example, a switching element provided on the display region side, from static electricity.

Here, as a comparative example, the wiring connecting the common wiring and the second protection element is formed in a linear shape, and the plurality of first protection elements and the second protection elements are in a linear positional relationship. Assuming a comparative example that is electrically connected to each other, in the comparative example, the following problems occur from a rule of thumb. That is, in the comparative example, since the relative positional relationship and electrical connection between the second protection element and the plurality of first protection elements are linear, a constant potential is externally applied in the manufacturing process of the comparative example. When static electricity enters the wiring and a certain amount or more of charge is accumulated in the constant potential wiring, the second protection element that electrically bundles the plurality of first protection elements plays a role as an antenna. There is a problem that static electricity failure occurs around the protective element. To further explain this point, at this time, the electric charge accumulated in the constant potential wiring is discharged, the discharged current flows to the second protection element side, and the electric potential higher than the withstand voltage becomes the second electric potential. When applied to the protective element, the insulating film of the second protective element causes dielectric breakdown, and the second protective element is damaged. In addition, since static electricity has a property of going straight on an empirical rule, at this time, the current corresponding to the static electricity further crosses the common wiring and is located near the second protection element. It flows to the element side. For this reason, when a potential higher than the withstand voltage is applied to the one or more first protection elements, the insulating film of the one or more first protection elements also causes electrostatic breakdown, Such protective elements may also be damaged. As a result, it does not serve as an electrostatic protection circuit. For this reason, when such a current flows to the switching element provided in the display region, the switching element may be further damaged. Therefore, the configuration of the comparative example has a problem that it is difficult to reduce static electricity defects such as the first and second protection elements.

In this respect, the electro-optical device is a common that extends in a direction intersecting with a direction in which the plurality of wirings extend by electrically connecting the other ends of the plurality of first protection elements in parallel. A wiring and electrically connected to the common wiring and bent after extending in the intersecting direction beyond the first protective element provided on the outermost side among the plurality of first protective elements. The plurality of first protection elements and the second protection elements are electrically connected non-linearly, that is, in a non-linear positional relationship. Thereby, it can suppress that a 2nd protection element functions as an antenna which attracts static electricity, and this static electricity becomes difficult to advance to the several 1st protection element side. As a result, it is possible to reduce the occurrence of static electricity defects in the plurality of first protection elements and the second protection elements. This can also prevent the switching elements provided in the display area from being damaged by static electricity.

In a preferred example, the common wiring includes a main line having a linear shape, and a plurality of branch lines each branching from the main line and connected to each of the other ends of the plurality of first protection elements. It is preferable that each of the branch lines is electrically connected to each of the corresponding wirings through each of the corresponding first protection elements. In addition, one end side of the portion that is electrically connected to the common wiring and extends in the intersecting direction beyond the first protective element provided on the outermost side among the plurality of first protective elements is It is preferably connected to one end side of the main line. Thereby, the magnitude of the leakage current generated in each of the plurality of first protection elements can be reduced as compared with the case where each of the first protection elements is directly electrically connected to the constant potential wiring. The power consumption of the electro-optical device can be suppressed from increasing.

In one aspect of the electro-optical device, the electro-optical device is electrically connected to the common wiring and extends in the intersecting direction beyond the first protective element provided on the outermost side among the plurality of first protective elements. Since the extended portion is provided so as to meander between the second protection element and the plurality of wirings, such static electricity does not go straight to the one or more first protection element side. Absent. Therefore, it can suppress that a 2nd protection element functions as an antenna which attracts static electricity, and can reduce that the static electricity defect of a some 1st protection element and a 2nd protection element arises.

  In another aspect of the electro-optical device, each of the plurality of first protection elements and the second protection elements includes a gate electrode, an insulating film formed on the gate electrode, and the insulating film A pair of protection elements each including a semiconductor layer formed on the semiconductor layer and a source electrode and a drain electrode formed on the semiconductor layer, and the pair of protections of each of the first protection elements. In the element, one of the protection elements and the other protection element are connected in parallel between the corresponding branch line and the corresponding wiring, and in the one protection element, the source electrode and the gate The electrode is connected to the corresponding wiring, the drain electrode is connected to the corresponding branch line, and in the other protection element, the source electrode and the gate electrode are: The drain electrode is connected to the corresponding wiring, and in the pair of protection elements of the second protection element, one of the protection elements and the other of the protection elements are connected to the corresponding branch line. The element is connected in parallel between the common wiring and the constant potential wiring. In the one protection element, the source electrode and the gate electrode are connected to the common wiring, and the drain The electrode is connected to the constant potential wiring. In the other protective element, the source electrode and the gate electrode are connected to the constant potential wiring, and the drain electrode is connected to the common wiring. Has been.

  In this aspect, each of the plurality of first protection elements and second protection elements includes a gate electrode, an insulating film formed on the gate electrode, and an amorphous silicon layer (α -Si layer) and a pair of protective elements including a source electrode and a drain electrode formed on the semiconductor layer.

  In each pair of protection elements of the first protection element, one protection element and the other protection element are connected in parallel between the corresponding branch line and the corresponding wiring. In one protection element, the source electrode and the gate electrode are connected to the corresponding wiring, and the drain electrode is connected to the corresponding branch line. In the other protection element, the source electrode and the gate electrode are The drain electrode is connected to the corresponding wiring while being connected to the corresponding branch line.

  In the pair of protection elements of the second protection element, one protection element and the other protection element are connected in parallel between the common wiring and the constant potential wiring. In one protection element, the source electrode and the gate electrode are connected to the common wiring, the drain electrode is connected to the constant potential wiring, and in the other protection element, the source electrode and the gate electrode are connected to the constant potential. The drain electrode is connected to the common wiring.

  For this reason, in the manufacturing process of the electro-optical device, for example, static electricity jumps into the constant potential wiring from the outside, and a certain amount of charge is accumulated in the constant potential wiring and is discharged between the second protection elements. When this occurs, the discharged current flows to the source electrode and the gate electrode of the other protection element of the pair of protection elements of the second protection element. As a result, the source electrode and the gate electrode have the same potential, such current flows to the drain electrode side through the insulating film and the semiconductor layer of the other protective element, and the current flows through the main line and the branch line of the common wiring. It flows through the source electrode and the gate electrode of the other protection element of the pair of protection elements of each first protection element. As a result, the source electrode and the gate electrode have the same potential, and the current flows through the source electrode and the drain electrode of one of the protection elements of the first protection element. Thereby, the source electrode and the drain electrode have the same potential, and such current flows to the drain electrode through the insulating film and the semiconductor layer of one protective element, and further, via the branch line and the main line of the common wiring, It flows to the source electrode and the gate electrode of one of the pair of protection elements of the second protection element. Accordingly, the source electrode and the gate electrode have the same potential, and the current flows to the drain electrode through the insulating film and the semiconductor layer of the one protective element, and finally flows to the constant potential wiring and is grounded ( Grounded).

  On the other hand, when static electricity is generated on the pixel electrode side serving as the display region, a current corresponding to the static electricity flows through each wiring, and the current is out of a pair of protective elements of the plurality of first protective elements. And flows to the source electrode and the drain electrode of one of the protective elements. As a result, the source electrode and the gate electrode have the same potential, the current flows to the drain electrode through the insulating film and the semiconductor layer of one protective element, and the current further flows into the corresponding common wiring branch line and It flows through the main line to the source electrode and the gate electrode of one of the pair of protective elements of the second protective element. Accordingly, the source electrode and the gate electrode have the same potential, and the current flows to the drain electrode through the insulating film and the semiconductor layer of the one protective element, and finally flows to the constant potential wiring and is grounded ( Grounded). By such an action of the electrostatic protection circuit, it is possible to prevent damage to components for the electro-optical device, for example, a switching element provided on the display region side, from static electricity.

  In a preferred example, each of the pair of protection elements of the plurality of first protection elements and the second protection element preferably has the same configuration as the switching element. Accordingly, in the manufacturing process of the electro-optical device, the plurality of first protection elements and the second protection element can be manufactured in the same process as the switching element, and an increase in the number of processes can be prevented.

  In another aspect of the present invention, an electronic apparatus including the electro-optical device as a display unit can be configured.

  The best mode for carrying out the present invention will be described below with reference to the drawings. In the following various embodiments, the present invention is applied to a liquid crystal device as an example of an electro-optical device.

  In various embodiments, the present invention is applied to a transmissive liquid crystal device in which one pixel has a colored region of four colors. Here, the colored areas of the four hues have colored areas of the hues of red (R), green (G), blue (B), and cyan (C).

[First embodiment]
(Configuration of liquid crystal device)
First, the configuration and the like of the liquid crystal device 100 according to the first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a plan view schematically showing a schematic configuration of the liquid crystal device 100 according to the first embodiment. In FIG. 1, a color filter substrate 92 is disposed on the front side (observation side) of the paper, and an element substrate 91 is disposed on the back side of the paper. In FIG. 1, the direction from one side 91a of the element substrate 91 on the projecting region 36 side to the one side 91c on the opposite side is defined as Y direction, and the direction from one side 91d to one side 91b is defined as X direction. Further, in FIG. 1, the region corresponding to each of the four colored layers 6 represents one subpixel region SG, and the pixel arrangement of one row and four columns constituted by these four subpixel regions SG is One pixel area AG is shown. Hereinafter, one display region existing in one sub-pixel region SG is referred to as “sub-pixel”, and a display region corresponding to one pixel region AG is referred to as “one pixel”.

  In the liquid crystal device 100, an element substrate 91 and a color filter substrate 92 disposed to face the element substrate 91 are bonded to each other via a frame-shaped sealing material 5, and the inner side of the sealing material 5, for example, TN A (Twisted Nematic) type liquid crystal is sealed to form a liquid crystal layer 4.

  The liquid crystal device 100 is a liquid crystal device for color display constituted by using a plurality of colored layers 6 corresponding to colored areas of four colors, and an active device using an α-Si type TFT element as a switching element. This is a matrix drive type liquid crystal device. The liquid crystal device 100 is a transmissive liquid crystal device that performs transmissive display.

  First, the planar configuration of the element substrate 91 will be described. On the inner surface of the element substrate 91, a constant-potential wiring 95 (hereinafter referred to as “grounding wiring 95”), a bent wiring 96 having an L-shape that forms a common wiring, and a connection wiring 90 are mainly used. A plurality of electrostatic protection circuits 98a and 98b including a plurality of first protection elements 22 and a second protection element 23, a plurality of source lines 32 and a plurality of gate lines 33 constituting a wiring, and a plurality of Storage capacitor line 34, a plurality of α-Si TFT elements 21, a plurality of pixel electrodes 10, an X driver IC 41 and a Y driver IC 42 as an example of a semiconductor device, an external connection wiring 35 and an FPC (Flexible Printed). Circuit) 40 is formed or mounted.

  As shown in FIG. 1, the element substrate 91 has an extended region 36 that extends outward from one side of the color filter substrate 92, and an X driver IC 41 and a Y driver IC 42 are placed on the extended region 36. Each is implemented. Terminals (not shown) on the input sides of the X driver IC 41 and the Y driver IC 42 are electrically connected to one end side of the plurality of external connection wires 35 and the other end side of the plurality of external connection wires 35. Is electrically connected to the FPC 40. One end side of the FPC 40 is connected to an electronic device (not shown).

  Each source line 32 is formed to extend in the Y direction and at an appropriate interval in the X direction, and one end side of each source line 32 is an output side terminal (not shown) of the X driver IC 41. Is electrically connected.

  Each gate line 33 is formed so as to extend in the X direction and within an effective display area V described later from a first wiring 33a formed so as to extend in the Y direction, and the terminal portion of the first wiring 33a. Second wiring 33b. The second wiring 33 b of each gate line 33 is formed to extend in the direction intersecting each source line 32, that is, in the X direction and at an appropriate interval in the Y direction. One end of one wiring 33a is electrically connected to a terminal (not shown) on the output side of the Y driver IC.

  Each auxiliary capacitance line 34 is provided so as to extend in the same direction as the second wiring 33b of the gate line 33, and is provided between the second wirings 33b of the gate line 33 adjacent to each other in the Y direction. Yes.

  Each α-Si type TFT element 21 is provided corresponding to the vicinity of the intersection position of each source line 32 and each gate line 33 of the second wiring 33b. Each α-Si TFT element 21 is electrically connected to each source line 32, each gate line 33, each pixel electrode 10, and the like. Each pixel electrode 10 is provided in each sub-pixel region SG.

  The electrostatic protection circuit 98a is provided at a position opposite to the overhanging region 36 on the element substrate 91, while the electrostatic protection circuit 98b is provided in the frame region 38 on the one side 91e side on the element substrate 91. These detailed configurations will be described later.

  A region in which a plurality of one pixel region AG is arranged in a matrix in the X direction and the Y direction is an effective display region V (a region surrounded by a two-dot chain line). In the effective display area V, images such as letters, numbers, and figures are displayed. The area outside the effective display area V is a frame area 38 that does not contribute to display.

  Next, the planar configuration of the color filter substrate 92 will be described. The color filter substrate 92 is a light-shielding layer (generally called “black matrix”, hereinafter simply abbreviated as “BM”), a plurality of colored layers 6 corresponding to colored areas of four colors, and a common electrode 8. Etc.

  The plurality of colored layers corresponding to the colored regions of the four hues include a colored layer 6R having a colored region of red (R) hue, a colored layer 6G having a colored region of green (G) hue, and blue ( A colored layer 6B having a colored region having a hue of B) and a colored layer 6C having a colored region having a cyan (C) hue are provided. In the following description, when referring to a colored layer regardless of color, it is simply referred to as “colored layer 6”, and when referring to a colored layer by distinguishing colors, it is referred to as “colored layer 6R” or the like. The BM corresponds to each auxiliary capacitance section 70, the second wiring 3b of each gate line 33, each source line 32, each α-Si type TFT element 21, and the auxiliary capacitance section 70 (see FIGS. 3 and 4). It is formed at the position to be. Similar to the pixel electrode, the common electrode 8 is made of a transparent conductive material such as ITO, and is formed over a substantially entire surface in the region inside the sealing material 5. The common electrode 8 is electrically connected to one end side of the wiring 15 in the corner area E1 of the sealing material 5, and the other end side of the wiring 15 is connected to an output terminal (for grounding) corresponding to the COM of the driver IC 40. Terminal). Therefore, the common electrode 8 and the ground wiring 95 are electrically at the same potential.

  The liquid crystal device 100 having the above configuration has an equivalent circuit as shown in FIG. 2 and operates as follows when driven.

  First, the source line 32 for supplying an image signal is connected to the source electrode 32x (see FIGS. 3 and 4) of the α-Si TFT element 21, and the pixel electrode 10 is connected to the drain of the α-Si TFT element 21. It is connected to the electrode 37 (see FIGS. 3 and 4). The gate line 33 is connected to the gate electrode 33x (see FIGS. 3 and 4) of the α-Si TFT element 21, and the α-Si TFT element 21 which is a switching element is switched for a certain period. By closing, the image signals S1, S2,..., Sn supplied from the source line 32 are written at a predetermined timing. The image signals S1, S2,..., Sn may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent gate lines 32. The gate signals G1, G2,..., Gm are applied to the gate line 33 in a pulse-sequential manner in this order in a pulse manner at a predetermined timing.

  A predetermined level of image signals S1, S2,..., Sn written to the liquid crystal layer 4 through the pixel electrode 10 is supplied to the common electrode 8 (see FIG. 4) provided on the color filter substrate 92 for a certain period. Retained. Then, in order to prevent the held image signal from leaking, the auxiliary capacitance formed by the auxiliary capacitance line 34 or the like in parallel with the liquid crystal capacitance Clc formed between the pixel electrode 10 and the common electrode 8. The storage capacitor Cs of the unit 70 (see FIGS. 3 and 4) is added. In this way, for example, the voltage of the pixel electrode 10 is held for a time that is three orders of magnitude longer than the time when the source voltage is applied by the auxiliary capacitor Cs of the auxiliary capacitor unit 70, the holding characteristics are further improved, and the contrast ratio is increased. Can be improved. As described above, in the liquid crystal device 100, the display state of the liquid crystal layer 4 is switched to the non-display state or the intermediate display state, and the alignment state of the liquid crystal molecules in the liquid crystal layer 4 is controlled. Thereby, a desired image can be displayed in the effective display area V.

(Pixel configuration)
Next, a pixel configuration according to the first embodiment will be described with reference to FIGS. 3 and 4.

  FIG. 3 is a partial plan view of the liquid crystal device 100 corresponding to one pixel when the color filter substrate 92 is seen through and the element substrate 91 side is viewed in plan from the color filter substrate 92 side. FIG. 4 is a partial cross-sectional view taken along the cutting line X1-X2 in FIG. 2, specifically, a partial cross-sectional view cut at a position passing through a part of one pixel in the liquid crystal device 100.

  First, a pixel configuration in the element substrate 91 will be described.

  On the inner surface of the lower substrate 1, second wirings 33b and auxiliary capacitance lines 34 of the plurality of gate lines 33 are provided so as to extend in the X direction. The second wirings 33b and the auxiliary capacitance lines 34 of the plurality of gate lines 33 are preferably formed of a light-shielding conductive material, for example, a conductive material such as aluminum, molybdenum, chromium, or an alloy thereof. In the first embodiment, the plurality of gate lines 33 have a multilayer structure made of the conductive material. This is a multi-layer structure in order to prevent various wirings including the gate line 33 from being peeled off due to temperature changes that occur in the manufacturing process of the element substrate 91. Each second wiring 33b is provided at an appropriate interval in the Y direction, while the auxiliary capacitance line 34 is between the adjacent second wirings 33b and one of the second wirings 33b. It is provided in the vicinity of the second wiring 33b side. Each second wiring 33b has a gate electrode 33x for each sub-pixel, and constitutes the α-Si TFT element 21 together with other elements to be described later. The auxiliary capacitance line 34 has an auxiliary capacitance electrode 34x formed by widening a part of each auxiliary pixel.

  A gate insulating film 50 made of a transparent resin material such as silicon nitride is provided on the inner surface of the lower substrate 1, the plurality of grounding wires 95, the second wires 33 b, the auxiliary capacitance electrodes 34 x and the like. On the inner surface of the gate insulating film 50, an α-Si layer 36 constituting the α-Si TFT element 21 is provided in an island shape at a position corresponding to each gate electrode 33x. On the inner surface of the gate insulating film 50, the source line 32 is provided between the sub-pixel regions SG so as to extend in the Y direction.

  Each source line 32 is formed of a conductive material such as aluminum and includes a first portion 32a, a second portion 32b, and a source electrode 32x. In each source line 32, each first portion 32a is provided between the pixel electrodes 10 adjacent to each other in the X direction, and each second portion 32b is between the auxiliary capacitance units 70 adjacent to each other in the X direction. Is provided. The line width (length in the X direction) of each second portion 32b is formed to be relatively smaller than the line width (length in the X direction) of each first portion 32a. As described above, the reason why the line width of the second portion 32b is smaller than the line width of the first portion 32a is that a parasitic capacitance that adversely affects display quality occurs between the second portion 32b and the auxiliary capacitance electrode 34x. This is to prevent this. Each source electrode 32x is branched from one end side of the first portion 32a to each α-Si layer 36 side. Each source electrode 32x partially overlaps each α-Si layer 36, and both are electrically connected. A drain electrode 37 formed of the same material as the source line 32 is provided on the gate insulating film 50 located in the auxiliary capacitance unit 70 and the inner surfaces of each α-Si layer 36 and the like. Therefore, one end side of the drain electrode 37 is electrically connected to each α-Si layer 36. Thus, the α-Si TFT element 21 is formed at the intersection of the second wiring 33 b of each gate line 33 and each source line 32. An element capacitance Ctft having the gate insulating film 50 as a dielectric is formed between the α-Si layer 36 and the gate electrode 33x. On the other hand, an auxiliary capacitor Cs having the gate insulating film 50 as a dielectric is formed between each auxiliary capacitor electrode 34x and the drain electrode 37. In the present specification, a region where the auxiliary capacitor Cs is formed is referred to as an “auxiliary capacitor unit 70”.

  On the inner surfaces of the gate insulating film 50, each α-Si type TFT element 21, and each auxiliary capacitance electrode 34x, a protective insulating film 51 made of, for example, an inorganic insulating material is provided. The protective insulating film 51 has a contact hole 51a at a position corresponding to each auxiliary capacitance electrode 34x. For this reason, the protective insulating film 51 is not provided on the inner surface of the drain electrode 37 corresponding to each auxiliary capacitance part 70. On the inner surface of the protective insulating film 51, an interlayer insulating film 52 made of, for example, an organic insulating material is provided. The interlayer insulating film 52 has a contact hole 52 a at a position corresponding to the auxiliary capacitance unit 70.

  On the inner surface of the drain electrode 37 corresponding to the interlayer insulating film 52 and each auxiliary capacitance portion 70, the position corresponding to each sub-pixel region SG is made of a transparent conductive material such as ITO (Indium-Tin Oxide), for example. A pixel electrode 10 is provided. Therefore, each pixel electrode 10 is electrically connected to the drain electrode 37 located in each auxiliary capacitance unit 70 through the contact holes 51a and 52a. An alignment film 19 that has been rubbed in a predetermined direction is provided on the inner surfaces of the interlayer insulating film 52 and the pixel electrode 10. A polarizing plate 11 is provided on the outer surface of the lower substrate 1. On the outer surface of the polarizing plate 11, a backlight 15 as an illumination device is disposed.

  Next, the configuration of the color filter substrate 92 corresponding to the pixel configuration of the element substrate 91 will be described.

  A position on the inner surface of the upper substrate 2 that overlaps each auxiliary capacitor 70, the second wiring 33 b of each gate line 33, each α-Si TFT element 21, each source line 32, and each auxiliary capacitor 70. Is provided with a light-shielding BM. On the inner surface of the BM and the upper substrate 2, a colored layer 6R, a colored layer 6G, a colored layer 6B, and a colored layer 6C are provided for each sub-pixel region SG. Here, when focusing on one pixel, the arrangement order of the colored layers 6 is set to the colored layer 6R, the colored layer 6G, the colored layer 6B, and the colored layer 6C in the X direction. A common electrode 8 made of the same material as the pixel electrode 10 is provided on the inner surface of each colored layer 6. On the inner surface of the common electrode 8, an alignment film 18 that has been rubbed in a predetermined direction is provided. A polarizing plate 12 is disposed on the outer surface of the upper substrate 2.

  The element substrate 91 and the color filter substrate 92 having the pixel configuration described above are opposed to each other via a sealant 5 (see FIG. 1), and a TN liquid crystal is sealed between the two substrates. Layer 4 is formed. Further, in the liquid crystal device 100, between the alignment film 19 provided on the element substrate 91 and the alignment film 18 provided on the color filter substrate 92, each α-Si TFT element 21 and each The thickness of the liquid crystal layer 4 is regulated to a constant thickness by the spacer 39 provided between the storage capacitor portion 70 and the auxiliary capacitor portion 70.

  When the transmissive display is performed in the liquid crystal device 100 having the above configuration, the illumination light emitted from the backlight 15 travels along the path T shown in FIG. 4 and the pixel electrode 10 and R, G, B, C. Passing through each colored layer 6 and the like, it reaches an observer. In this case, the illumination light exhibits a predetermined hue and brightness by passing through the colored layers 6. Thus, a desired color display image is visually recognized by the observer. In particular, the liquid crystal device 100 is configured by using one color of complementary color C in addition to three colors of primary colors R, G, and B. The reduction in luminance is suppressed, and in the XY chromaticity diagram of the International Commission on Illumination (CIE), the color reproduction range (chromaticity range) is compared with a liquid crystal device composed of three colors of R, G, and B. ) Is large, and high color rendering display can be realized.

(Configuration of electrostatic protection circuit)
Next, the configuration of the electrostatic protection circuit according to the first embodiment of the present invention will be described with reference to FIG. 1, FIG. 5, and FIG.

  FIG. 5 is a partially enlarged plan view corresponding to the broken line area E2 in FIG. 1, and particularly shows a part of the electrostatic protection circuit 98a provided on the element substrate 91 in an enlarged manner. FIG. 6 shows a part of an equivalent circuit constituting the electrostatic protection circuit 98a shown in FIG.

  In the manufacturing process of the element substrate, the switching element or the like provided in the effective display area V of the electro-optical panel may be damaged by static electricity jumping from the outside or static electricity generated inside the element substrate. For this reason, an electrostatic protection circuit is usually provided on the element substrate.

  In this regard, also in the first embodiment, as shown in FIG. 1, the element substrate 91 is provided with electrostatic protection circuits 98a and 98b for countermeasures against static electricity defects.

  The electrostatic protection circuit 98a is provided in the frame region 38 on the one side 91b side of the element substrate 91, while the electrostatic protection circuit 98b is provided in the frame region 38 on the one side 91e side of the element substrate 91. In the present invention, the setting positions of the electrostatic protection circuits 98a and 98b in the element substrate 91 are not limited to the above positions. Here, the electrostatic protection circuits 98a and 98b include a grounding wiring 95 that is a constant potential wiring, a bent wiring 96 and a connecting wiring 90 that constitute a common wiring, a plurality of first protection elements 22 and a second wiring, respectively. And the protective element 23.

  First, the configuration of the electrostatic protection circuit 98a will be described.

  The ground wiring 95 is formed in the same process and the same metal material as the gate line 33. The ground wiring 95 is arranged so as to surround the effective display area V of the electro-optical panel in order to enhance the effect of shielding static electricity. That is, the ground wiring 95 is routed in a ring shape along the outer peripheral portion of the lower substrate 1, and one end and the other end of the ground wiring 95 are respectively the X driver IC 41 and the Y driver IC 42. Are electrically connected to each output terminal (grounding terminal) corresponding to COM. That is, the ground wiring 95 is grounded.

  The connection wiring 90 is formed of the same metal material as the source line 32 or the gate line 33. The connection wiring 90 is provided on the lower substrate 1 corresponding to the frame region 38 on the one side 91b side of the element substrate 91, and has a linear main line 90a extending in the X direction, and an effective display region V side from the main line 90a. And a plurality of branch lines 90b branching to the corresponding source line 32 side.

  The bent wiring 96 (corresponding to the portion of the broken line region E3 in FIG. 5) has an L-shape, includes one bent portion 96a, and includes a plurality of first protection elements 22 and second protection elements 23. Are electrically connected non-linearly, that is, electrically connected in a non-linear positional relationship. In this example, the connection wiring 90 and the bent wiring 96 are integrally formed in consideration of reduction of the manufacturing process. Therefore, one end side of the bent wiring 96 is connected to one end side of the main line 90a.

  Each first protection element 22 includes a pair of protection elements 22a and 22b, and each protection element 22a and 22b has substantially the same configuration as that of the α-Si TFT element 21 described above. That is, each protection element 22a and 22b includes a gate electrode 22v, an insulating film 22w, an α-Si layer 22x, a source electrode 22y, and a drain electrode 22z, as shown in FIG. The gate electrode 22v is formed in the same layer as the gate line 33. An insulating film 22w is provided on the gate electrode 22v, and an α-Si layer 22x is provided on the insulating film 22w. The source electrode 22y and the drain electrode 22z are provided on the insulating film 22w and the α-Si layer 22x, and both of them are electrically connected to the α-Si layer 22x. As can be seen from the above configuration, each first protection element 22 is manufactured in the same process as the α-Si TFT element 21 in the manufacturing process of the element substrate 91, thereby reducing the manufacturing process.

  Each protection element 22a and 22b is provided between the corresponding source line 32 and the corresponding branch line 90b. The relative positional relationship between the source electrode 22y and drain electrode 22z of each protection element 22a and the source electrode 22y and drain electrode 22z of each protection element 22b is reversed, and the source electrode 22y of each protection element 22a. The gate electrode 22v and the drain electrode 22w of each protection element 22b are electrically connected to the corresponding source line 32, while the drain electrode 22w of each protection element 22a and the source of each protection element 22b The electrode 22y and the gate electrode 22v are electrically connected to the corresponding branch lines 90b. For this reason, each protection element 22a and each protection element 22b are connected in parallel to each source line 32 and each branch line 90b.

  The second protection element 23 has the same configuration as each of the first protection elements 22 described above. That is, the second protection element 23 includes a pair of protection elements 23a and 23b, and each protection element 23a and 23b includes a gate electrode 23v, an insulating film 23w, α-Si as shown in FIG. A layer 23x, a source electrode 23y, and a drain electrode 23z are included. The gate electrode 23v is formed in the same layer as the gate line 33. An insulating film 23w is provided on the gate electrode 23v, and an α-Si layer 23x is provided on the insulating film 23w. The source electrode 23y and the drain electrode 23z are provided on the insulating film 23x and the α-Si layer 23x, and both of them are electrically connected to the α-Si layer 23x. As can be seen from the above configuration, the second protection element 23 is manufactured in the same process as the α-Si TFT element 21 in the manufacturing process of the element substrate 91, thereby reducing the manufacturing process.

  Each of the protection elements 23 a and 23 b is provided between the bent wiring 96 and the ground wiring 95. The relative positional relationship between the source electrode 23y and the drain electrode 23z of the protection element 23a and the source electrode 22y and the drain electrode 22z of the protection element 23b is reversed, and the source electrode 23y and the gate electrode of the protection element 23a are reversed. 23v and the drain electrode 23z of the protection element 23b are electrically connected to the bent wiring 96, while the drain electrode 23z of the protection element 23a, and the source electrode 23y and the gate electrode 23v of the protection element 23b are grounded. The wiring 95 is electrically connected. Therefore, the second protection element 23 is connected in parallel to the bent wiring 96 and the ground wiring 95.

  In the electrostatic protection circuit 98a described above, the plurality of first protection elements 22 electrically connected in parallel to the connection wiring 90 include the second protection element 23 and the ground wiring via the bent wiring 96. 95 is connected in series. As described above, since the second protection element 23 is disposed at a position where the plurality of first protection elements 22 are electrically bundled, the electrostatic protection circuit 98a includes the second protection element 23 and the plurality of first protection elements 23. Static electricity is removed by a two-stage configuration with the protective element 22. Also, with such a configuration, the leakage current generated in each of the plurality of first protection elements 22 is larger than in the case where each of the first protection elements 22 is directly electrically connected to the ground wiring 95. Therefore, the increase in power consumption of the liquid crystal device 100 can be suppressed.

  Next, the basic operation of the electrostatic protection circuit 98a when static electricity is generated in the process of manufacturing the element substrate 91 will be described by focusing on the broken line area E4 in FIG.

  In the process of manufacturing the element substrate 91, when static electricity is generated on the effective display region V side, the static electricity follows the path indicated by the broken line L1 and finally flows to the ground wiring 95 and is grounded. Specifically, a current corresponding to static electricity generated on the effective display region V side first flows through the source line 32 to the source electrode 22y and gate electrode 22v side of the protection element 22a which is an element of the first protection element 22. . Therefore, the source electrode 22y and the gate electrode 22v are at the same potential, and the switch of the protection element 22a is turned on. As a result, the current flows through the insulating film 22w, the α-Si layer 22x, the drain electrode 22z, the branch line 90b, the main line 90a, the bent wiring 96, and the source electrode 23y of the protection element 23a that is an element of the first protection element 23. And flows toward the gate electrode 23v. For this reason, the source electrode 23y and the gate electrode 23v are at the same potential, and the switch of the protection element 23a is turned on. As a result, the current flows through the insulating film 23w, the α-Si layer 23x, and the drain electrode 23z to the ground wiring 95 and is grounded. Therefore, it is possible to prevent the α-Si TFT element 21 and the like in the effective display area V from being damaged.

  On the other hand, when static electricity jumps from the outside to the grounding wiring 95 side, it follows the path indicated by the solid line L2 and further detours to the path indicated by the broken line L1, and finally flows to the grounding wiring 95 and is grounded. Specifically, static electricity jumps into the grounding wiring 95 from the outside, electric charges of a certain level or more are accumulated in the grounding wiring 95 to cause discharge, and the discharged current flows to the second protection element 23 side. In this case, the current flows to the source electrode 23y and the gate electrode 23v of the protection element 23b which is an element of the second protection element 23. For this reason, the source electrode 23y and the gate electrode 23v are at the same potential, and the switch of the protection element 23b is turned on. As a result, such current flows through the insulating film 23w, the α-Si layer 23x, the drain electrode 23z, the bent wiring 96, the main line 90a, and the branch line 90b, and the source electrode 22y of the protection element 22b that is an element of the first protection element 22. And flows toward the gate electrode 22v. For this reason, the source electrode 22y and the gate electrode 22v are at the same potential, and the switch of the protection element 22b is turned on. As a result, the current flows to the source electrode 22y and gate electrode 22v side of the protection element 22a that is an element of the second protection element 22. For this reason, the source electrode 22y and the gate electrode 22v have the same potential, and the switch of the protection element 22a is turned on. As a result, the current flows through the insulating film 22w, the α-Si layer 22x, the drain electrode 22z, the branch line 90b, the main line 90a, the bent wiring 96, and the source electrode 23y of the protection element 23a that is an element of the second protection element 23. And flows toward the gate electrode 23v. For this reason, the source electrode 23y and the gate electrode 23v are at the same potential, and the protection element 23a is turned on. As a result, it finally flows to the ground wiring 95 through the insulating film 23w, the α-Si layer 23x, and the drain electrode 23z, and is grounded. Therefore, it is possible to prevent the α-Si TFT element 21 and the like in the effective display area V from being damaged.

  Next, the configuration of the electrostatic protection circuit 98b will be described. Since the electrostatic protection circuit 98b has substantially the same configuration as the electrostatic protection circuit 98a, the following description will be made on differences from the electrostatic protection circuit 98a, and description of the same elements as the electrostatic protection circuit 98a will be simplified or Omitted.

  As shown in FIG. 1, the connection wiring 90 of the electrostatic protection circuit 98b is provided on the lower substrate 1 corresponding to the frame region 38 on the one side 91e side of the element substrate 91, and is a straight line extending in the Y direction. The main line 90a and a plurality of branch lines 90b branching from the main line 90a to the effective display region V side and to the second wiring 33b side of each corresponding gate line. One end side of the bent wiring 96 of the electrostatic protection circuit 98 b is connected to one end side of the main line 90, and the other end side of the bent wiring 96 is connected to the second protection element 23.

  In the electrostatic protection circuit 98b, each first protection element 22 is provided between the main line 90a and the second wiring 33b of each gate line 33, and is electrically connected to the corresponding branch line 90b and second wiring 33b. It is connected. For this reason, in each first protection element 22, the protection element 22 a and the protection element 22 b are connected in parallel to each second wiring 33 b and each connection wiring 90. In the electrostatic protection circuit 98b, the second protection element 23 is provided between the ground wiring 95 and the bent wiring 96, and is electrically connected to both. Therefore, in the second protection element 23, the protection element 23 a and the protection element 23 b are connected in parallel to the second wiring 33 b of each gate line 33 and each connection wiring 90. Thus, the electrostatic protection circuit 98b according to the first embodiment is configured. The basic operation of the electrostatic protection circuit 98b having such a configuration is the same as that of the above-described electrostatic protection circuit 98a, and a description thereof will be omitted.

  Next, with reference to FIG. 5 and FIG. 6, a description will be given of specific operational effects of the electrostatic protection circuit 98 according to the first embodiment of the present invention compared with the comparative example.

  First, the structure of a comparative example and its effect are demonstrated.

  In the comparative example, as shown in FIG. 5, in the electrostatic protection circuit 98a, the second protection element 23 is provided at the position of the broken line region E5. A wiring corresponding to the bent wiring 96 of the first embodiment is formed in a straight wiring 97 (hereinafter referred to as “straight wiring 97”), and a plurality of first protection elements 22 and second protection elements are formed. 23 are electrically connected by a linear wiring 97 in a linear positional relationship. In the comparative example having such a configuration, the following problems occur from a rule of thumb. That is, in the comparative example, since the relative positional relationship and electrical connection between the second protection element 23 and the plurality of first protection elements 22 are linear, grounding from the outside in the manufacturing process of the comparative example. When static electricity jumps into the wiring 95 and a certain amount of charge is accumulated in the grounding wiring 95, the second protection element 23 arranged at a position where the plurality of first protection elements 22 are electrically bundled is formed. The charge accumulated in the ground wiring 95 is discharged, and the discharged current flows to the second protection element 23 side. At this time, when a potential higher than the withstand voltage is applied to the second protective element 23, the insulating film 23w of the second protective element 23 causes dielectric breakdown, and the second protective element 23 is damaged. May end up. Further, since static electricity has a property of going straight, a current corresponding to the static electricity flows through the main line 90a to the branch line 90b, and further, one or a plurality of first elements located near the second protection element 23. It flows to the protection element 22 side. For this reason, when a potential higher than the withstand voltage is applied to the one or more first protection elements 22, the insulating film 22w of the one or more first protection elements 22 also causes electrostatic breakdown. As a result, the protective element 22 may be damaged. As a result, the electrostatic protection circuit 98a can no longer be played. Therefore, when such a current flows to the α-Si TFT element 21 provided in the effective display region V, the α-Si TFT element 21 may be further damaged. Therefore, the configuration of the comparative example has a problem that it is difficult to reduce static electricity defects such as the first protection element 22 and the second protection element 23.

  In this regard, in the liquid crystal device 100, the bent wiring 96 and the connection wiring 90 that constitute the common wiring have a portion that extends in a direction that is temporarily removed from the region where the first protection element 22 is disposed. In a preferred example, the portion of the common wiring extending in the direction of once detachment can be a bent wiring 96. Further, the bent wiring 96 includes one bent portion 96a, and the plurality of first protection elements 22 and the second protection elements 23 are electrically connected non-linearly, that is, electrically in a non-linear positional relationship. It is preferable to be connected to. According to such a structure, the plurality of first protection elements 22 do not exist in the vicinity of the extension line L3 in the direction in which the ground wiring 95 and the second protection element 23 are linearly connected. In addition, this structure can suppress the function of the second protection element 23 as an antenna that attracts static electricity, and the static electricity is less likely to travel toward the plurality of first protection elements 22. In the manufacturing process of the liquid crystal device 100, static electricity jumps from the outside to the grounding wiring 95 side, and a certain amount of charge is accumulated in the grounding wiring 95, and a discharge occurs between the second protection element 23. Even in such a case, the static electricity goes straight in the direction of the arrow Y1 in FIG. 5 in the extension line L3 connecting the grounding wiring 95 and the second protection element 23. Therefore, the current corresponding to the static electricity has a plurality of first currents. It becomes difficult to go around to the protective element 22 side. As a result, it is possible to reduce the occurrence of static electricity defects in the plurality of first protection elements 22 and the second protection elements 23. This also prevents the α-Si TFT element 21 and the like provided in the effective display area V from being damaged by static electricity.

[Second Embodiment]
Next, the configuration of the electrostatic protection circuit according to the second embodiment of the present invention will be described with reference to FIG. FIG. 7 is a partial plan view of the electrostatic protection circuit 99 according to the second embodiment, corresponding to FIG. In the following, the same elements as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted or simplified.

  The second embodiment is common to the comparative example in that the second protection element 23 is provided at substantially the same position as the comparative example described above. However, the second embodiment and the comparative example are structurally different in the following points. That is, in the comparative example, the second protection element 23 and the plurality of first protection elements 22 are connected via the linear wiring 97 or the like, whereas in the second embodiment, the second protection element 23 and the plurality of first protection elements 22 are electrically connected via a bent wiring 96 having three bent portions 96a (corresponding to the portion of the broken line region E6) and the like. Is different. Further, in the second embodiment, the portion of the common wiring that extends in the direction once removed can be a bent wiring 96. In the second embodiment, it can be said that the bent wiring 96 is formed to meander between the second protection element 23 and the connection wiring 90 in another expression.

  Here, in the manufacturing process of the second embodiment, assuming that static electricity is discharged from the ground wiring 95 to the second protection element 23 side, such static electricity goes straight in the Y1 direction in FIG. To do. However, at a position corresponding to the second protection element 23, the bent wiring 96 and the connection wiring 90 that constitute the common wiring have a portion that extends in a direction in which the first protection element 22 is temporarily detached from the region where the first protection element 22 is disposed. In addition, the bent wiring 96 as a portion extending in the direction in which the common wiring is once removed and the main line 95a are electrically connected non-linearly, that is, not electrically connected in a linear positional relationship. (In other words, they are electrically connected in a non-linear positional relationship), so that the static electricity goes straight along the direction of the arrow Y1, and one or more first lines are connected via the main line 95a and the branch line 90b. There is no such thing as going straight to the protective element 22 side. Therefore, it can suppress that the 2nd protection element 23 functions as an antenna which attracts static electricity, and there exists an effect similar to said 1st Embodiment.

[Other Embodiments]
In the above description, as an example of the colored region of the four colors of hue, an example of the colored region of the four colors of R, G, B, and C has been described. However, the application of the present invention is not limited to this, One pixel can also be constituted by colored regions of other four colors.

  In this case, the colored region of the four hues is a blue colored region (also referred to as “first colored region”) in the visible light region (380 to 780 nm) in which the hue changes according to the wavelength. A colored region having a red hue (also referred to as a “second colored region”) and two colored regions selected from hues from blue to yellow (“third colored region”, “fourth colored region”). Also called “colored region”. Here, the term “system” is used. For example, if it is a blue system, the color is not limited to a pure blue hue, and includes a blue-violet color, a blue-green color, and the like. If it is a red hue, it is not limited to red but includes orange. These colored regions may be composed of a single colored layer, or may be composed of a plurality of colored layers having different hues. In addition, although these colored regions are described in terms of hue, the hue can be set by changing the saturation and lightness as appropriate.

The specific hue range is
-The colored region of the blue hue is from violet to blue-green, more preferably from indigo to blue.
-The colored region of red hue is from orange to red.
-One coloring area | region selected by the hue from blue to yellow is blue to green, More preferably, it is blue green to green.
-The other coloring area | region selected by the hue from blue to yellow is green to orange, More preferably, it is green to yellow. Or it is green to yellowish green.

  Here, the same hue is not used for each colored region. For example, when a green hue is used in two colored regions selected from hues of blue to yellow, the other uses a blue or yellowish green hue for one green.

  Thereby, a wider range of color reproducibility than the conventional RGB colored region can be realized.

As another specific example, it is expressed as follows when expressed in terms of the wavelength that passes through the colored region.
The blue colored region is a colored region having a peak of the wavelength of light transmitted through the colored region at 415 to 500 nm, preferably a colored region at 435 to 485 nm.
The red colored region is a colored region having a wavelength peak of light transmitted through the colored region of 600 nm or more, and preferably a colored region of 605 nm or more.
One colored region selected with a hue from blue to yellow is a colored region having a wavelength peak of light of 485 to 535 nm, preferably 495 to 520 nm. .
The other colored region selected with a hue from blue to yellow is a colored region having a wavelength peak of light of 500 to 590 nm transmitted through the colored region, preferably a colored region having a wavelength of 510 to 585 nm, or 530 to This is a colored region at 565 nm.

In the case of transmissive display, this wavelength is a numerical value obtained by illuminating light from the backlight 15 as an illuminating device through a color filter (colored layer). In the case of reflective display, the value is obtained by reflecting external light.
As another specific example, it is expressed as follows in an x, y chromaticity diagram.
The blue colored region is a colored region where x ≦ 0.151 and y ≦ 0.200, preferably a colored region where 0.134 ≦ x ≦ 0.151 and 0.034 ≦ y ≦ 0.200.
The red colored region is a colored region satisfying 0.520 ≦ x and y ≦ 0.360, and preferably a colored region satisfying 0.550 ≦ x ≦ 0.690 and 0.210 ≦ y ≦ 0.360.
-One of the colored areas selected in hues from blue to yellow is a colored area where x ≦ 0.200 and 0.210 ≦ y, preferably a colored area where 0.080 ≦ x ≦ 0.200 and 0.210 ≦ y ≦ 0.759 is there.
-The other colored region selected with a hue from blue to yellow is a colored region in the range of 0.257 ≦ x, 0.450 ≦ y, preferably a colored region in the range of 0.257 ≦ x ≦ 0.520, 0.450 ≦ y ≦ 0.720 is there.

  In the case of transmissive display, the x, y chromaticity diagram is a numerical value obtained by illuminating light from the backlight 15 as an illuminating device through a color filter (colored layer). In the case of reflective display, the value is obtained by reflecting external light.

  These four colored regions can be applied in the above-described range when the transmission region and the reflection region are provided in one sub-pixel region SG.

  In addition, you may use LED (Light Emitting Diode), a fluorescent tube, organic electroluminescence (EL) etc. for the backlight 15 as a RGB light source. Alternatively, a white light source may be used. The white light source may be a white light source generated by a blue light emitter and a YAG phosphor.

However, the following are preferable as the RGB light source.
-B has a peak wavelength of emitted light at 435 nm to 485 nm-G has a peak wavelength of emitted light at 520 nm to 545 nm-R has a peak wavelength of emitted light at 610 nm to 650 nm Further, a wider range of color reproducibility can be obtained if the above-described colored layer is appropriately selected according to the wavelength of the RGB light source. Moreover, you may use the light source which has a some peak so that a wavelength may come to a peak at 450 nm and 565 nm, for example.

Specific examples of the configuration of the colored region of the above four hues include the following.
-Colored areas with hues of red, blue, green, and cyan (blue green). This is a configuration example of each of the above embodiments.
・ Colored areas of red, blue, green, and yellow ・ Colored areas of red, blue, dark green, and yellow ・ Colored areas of red, blue, emerald, and yellow ・ Hue is red, blue, Colored areas of dark green and yellowish green / colored areas of red, bluegreen, dark green and yellowish green [Modification]
In the present invention, the bent wiring 96 as a portion extending in the direction in which the common wiring is once removed in the electrostatic protection circuit 98 is not limited to the above-described configuration, and may be configured to have at least one bent portion 96a.

  Further, in each of the above embodiments, the colored layers 6 are arranged in stripes in the arrangement order of R, G, C, and B for each pixel region AG unit. However, in the present invention, R, G, There is no particular limitation on the arrangement order of the four colored layers 6 of C and B. For example, as shown in FIG. 8A, the colored layers 6 are arranged in stripes in the arrangement order of B, G, R, and C. You may comprise so that it may do. In place of this, in the present invention, as shown in FIG. 8B, each colored layer 6 corresponding to each of R, G, C, and B is formed in a rice field or a mosaic type for each pixel region AG unit. You may arrange | position so that it may become.

  In each of the above embodiments, the liquid crystal device is configured using four colored layers. However, the present invention is not limited to this, and in the present invention, the liquid crystal device may be configured using three colored layers. I do not care.

  In each of the above embodiments, the present invention is applied to a transmissive liquid crystal device. However, the present invention is not limited to this, and the present invention can also be applied to a transflective or reflective liquid crystal device.

  The present invention uses a TFD (Thin Film Diode) element as an example of a two-terminal element in addition to the liquid crystal device 100 using the α-Si TFT element 21 as an example of the above-described three-terminal element. It can also be applied to conventional liquid crystal devices.

  In addition, the present invention is not limited to the configurations of the above-described embodiments and modifications, and various modifications can be made without departing from the spirit of the present invention.

[Electronics]
Next, specific examples of electronic devices to which the above-described liquid crystal device 100 according to the first embodiment of the present invention and the liquid crystal devices according to the second embodiment and various modifications can be applied will be described with reference to FIG.

  First, an example in which the liquid crystal device 100 of the present invention is applied to a display unit of a portable personal computer (so-called notebook computer) will be described. FIG. 9A is a perspective view showing the configuration of this personal computer. As shown in the figure, a personal computer 710 includes a main body 712 having a keyboard 711 and a display 713 to which the liquid crystal device 100 according to the present invention is applied.

  Next, an example in which the liquid crystal device 100 according to the present invention is applied to a display unit of a mobile phone will be described. FIG. 9B is a perspective view showing the configuration of this mobile phone. As shown in the figure, the mobile phone 720 includes a plurality of operation buttons 721, a reception port 722, a transmission port 723, and a display unit 724 to which the liquid crystal device 100 according to the present invention is applied.

  Note that, as an electronic device to which the liquid crystal device 100 according to the present invention can be applied, in addition to the personal computer shown in FIG. 9A and the mobile phone shown in FIG. Type / monitor direct-view type video tape recorder, car navigation device, pager, electronic notebook, calculator, word processor, workstation, videophone, POS terminal, digital still camera, etc.

  In addition, the present invention is not limited to a liquid crystal device, but an electroluminescence device, an organic electroluminescence device, a plasma display device, an electrophoretic display device, a device using an electron-emitting device (Field Emission Display, Surface-Conduction Electron-Emitter Display, etc. The present invention can be similarly applied to various electro-optical devices such as).

1 is a plan view schematically showing the configuration of a liquid crystal device according to a first embodiment of the present invention. FIG. 3 is an equivalent circuit diagram of the liquid crystal device according to the first embodiment. FIG. 2 is a plan view showing a pixel configuration of the first embodiment. FIG. 4 is a partial cross-sectional view taken along a cutting line X1-X2 in FIG. The partial top view which expands and shows a part of electrostatic protection circuit which concerns on 1st Embodiment. FIG. 6 is an equivalent circuit diagram corresponding to a part of the electrostatic protection circuit corresponding to FIG. 5. The partial top view which expands and shows a part of electrostatic protection circuit which concerns on 2nd Embodiment. The top view which shows the various pixel structure which concerns on a modification. 6 illustrates an example of an electronic device to which the liquid crystal device of the invention is applied.

Explanation of symbols

  21 α-Si type TFT element, 22 first protection element, 23 second protection element, 38 frame area, V effective display area, 90 connection wiring, 91 element substrate, 92 color filter substrate, 95 grounding wiring, 96 bent wiring, 96a bent portion, 98a, 98b, 99 electrostatic protection circuit, 100 liquid crystal device

Claims (8)

A plurality of wirings for supplying a signal supplied from a semiconductor device to a pixel electrode electrically connected via a switching element, and an electrostatic protection circuit for protecting components for the electro-optical device from static electricity,
The electrostatic protection circuit is
A plurality of first protection elements having one end electrically connected to each of terminal portions of the plurality of wirings;
Each of the other ends of the plurality of first protection elements is electrically connected in parallel, and a common wiring extending in a direction intersecting with a direction in which the plurality of wirings extend;
A wiring that is electrically connected to the common wiring, extends beyond the first protection element provided on the outermost side among the plurality of first protection elements, and then extends in the intersecting direction; ,
A second protection element having one end connected to the bent wiring;
A constant-potential wiring electrically connected to the other end of the second protection element;
An electro-optical device comprising:   A portion that is electrically connected to the common wiring and extends in the intersecting direction beyond the first protection element provided on the outermost side among the plurality of first protection elements is the second protection element. The electro-optical device according to claim 1, wherein the electro-optical device is provided so as to meander between an element and the plurality of wirings. The common wiring includes a main line having a linear shape, and a plurality of branch lines each branching from the main line and connected to each of the other ends of the plurality of first protection elements,
The electro-optical device according to claim 1, wherein each of the branch lines is electrically connected to each of the corresponding wirings via each of the corresponding first protection elements. .   One end side of a portion that is electrically connected to the common wiring and extends in the intersecting direction beyond the outermost first protective element among the plurality of first protective elements is the main line. The electro-optical device according to claim 3, wherein the electro-optical device is connected to one end side. Each of the plurality of first protection elements and the second protection elements includes a gate electrode, an insulating film formed on the gate electrode, a semiconductor layer formed on the insulating film, and the semiconductor layer Having a pair of protective elements including a source electrode and a drain electrode formed thereon,
In the pair of protection elements of each of the first protection elements, one of the protection elements and the other protection element are connected in parallel between the corresponding branch line and the corresponding wiring, In the one protection element, the source electrode and the gate electrode are connected to the corresponding wiring, and the drain electrode is connected to the corresponding branch line, and in the other protection element, The source electrode and the gate electrode are connected to the corresponding branch line, and the drain electrode is connected to the corresponding wiring.
In the pair of protection elements of the second protection element, one protection element and the other protection element are connected in parallel between the common wiring and the constant potential wiring, and the one of the protection elements In the protection element, the source electrode and the gate electrode are connected to the common wiring, and the drain electrode is connected to the constant potential wiring. In the other protection element, the source electrode and the gate 5. The electro-optical device according to claim 3, wherein the electrode is connected to the constant potential wiring, and the drain electrode is connected to the common wiring.   6. The electro-optical device according to claim 5, wherein each of the pair of protection elements of the plurality of first protection elements and the second protection element has the same configuration as the switching element.   The electro-optical device according to claim 1, wherein the constant potential wiring is arranged so as to surround a display area of the electro-optical panel.   An electronic apparatus comprising the electro-optical device according to claim 1 as a display unit.

Images