KR102480109B1 - Organic light emitting display panel and organic light emitting display device - Google Patents

Abstract

The present embodiments relate to an organic light emitting display panel and an organic light emitting display device, and more particularly, by placing a light shield in a region of transistors in each subpixel to reduce a characteristic change of each transistor due to light, while reducing the change in characteristics of each transistor. It has a structure in which the shape and connection position of the light shield located in the region of each transistor is different according to the function and role of the. Accordingly, the influence of the body effect can be effectively reduced, and through this, an abnormal image phenomenon can be prevented.

Description

Organic light emitting display panel and organic light emitting display device {ORGANIC LIGHT EMITTING DISPLAY PANEL AND ORGANIC LIGHT EMITTING DISPLAY DEVICE}

The present embodiments relate to an organic light emitting display device and an organic light emitting display device.

Recently, an organic light emitting display device that has been in the limelight as a display device uses an organic light emitting diode (OLED) that emits light by itself, and has advantages such as fast response speed, luminous efficiency, luminance, and viewing angle.

An organic light emitting diode and various types of transistors are arranged for each subpixel in the organic light emitting display panel of the organic light emitting display device.

In an organic light emitting display panel, circuit elements such as transistors deteriorate over time and thus change element characteristics, but also change when exposed to light (eg, external light).

As described above, when the device characteristics of each circuit element in the organic light emitting display panel change according to the driving time or the element characteristics change due to external light exposure, abnormal driving may cause a screen abnormality.

An object of the present embodiments is to reduce the influence of the body effect that may occur in each transistor while reducing the characteristic change of the transistor caused by light by locating the light shield in the region of the transistors in each subpixel. It is an object of the present invention to provide an organic light emitting display panel and an organic light emitting display device having a light shield structure.

Another object of the present embodiments is to vary the shape and connection position of the light shield located in the region of each transistor according to the function and role of each transistor, thereby effectively reducing the influence of the body effect, which It is an object of the present invention to provide an organic light emitting display panel and an organic light emitting display device having a multi-light shield structure capable of preventing an abnormal image phenomenon through the use of a light source.

Another object of the present embodiments is an organic light emitting display having a multi-light shield structure capable of preventing a phenomenon in which a first transistor for transferring a data voltage to a gate node of a driving transistor in each subpixel is turned on unintentionally. It is to provide a panel and an organic light emitting display device.

Another object of the present embodiments is an organic light shield structure having a multi-light shield structure capable of preventing unwanted turn-on of a driving transistor in each subpixel or a second transistor used for sensing a characteristic value of an organic light emitting diode. It is to provide a light emitting display panel and an organic light emitting display device.

Another object of the present embodiments is to reduce a parasitic capacitor between a source node (or drain node) of a driving transistor and a reference voltage line used to sense a characteristic value of a driving transistor or organic light emitting diode in each subpixel, thereby increasing sensing accuracy. It is an object of the present invention to provide an organic light emitting display panel and an organic light emitting display device having a multi-light shield structure capable of improving light.

In one aspect, the present embodiments include: an organic light emitting display panel in which a plurality of subpixels defined by a plurality of data lines and a plurality of gate lines are arranged in a matrix type; a data driver for driving the plurality of data lines; It is possible to provide an organic light emitting display device including a gate driver driving a gate line of .

In such an organic light emitting display device, each subpixel includes an organic light emitting diode, a driving transistor for driving the organic light emitting diode, a first transistor electrically connected between a first node of the driving transistor and a data line, and a second transistor of the driving transistor. It may include a second transistor electrically connected between the node and the reference voltage line, and a storage capacitor electrically connected between the first node and the second node of the driving transistor.

In each subpixel, a light shield may be positioned in each region of the driving transistor, the first transistor, and the second transistor.

The light shield positioned in the region of the driving transistor of the first subpixel may be electrically connected to the second node of the driving transistor of the first subpixel.

The light shield positioned in the region of the second transistor of the first subpixel is electrically connected to the gate node of the second transistor of the first subpixel or isoelectric pattern corresponding to the gate node of the second transistor of the first subpixel. can be electrically connected to

On the other hand, according to the present embodiments, an organic light emitting display panel including a plurality of data lines, a plurality of gate lines, and a plurality of subpixels defined by the plurality of data lines and the plurality of gate lines and arranged in a matrix type. can provide.

In such an organic light emitting display panel, each subpixel includes an organic light emitting diode, a driving transistor for driving the organic light emitting diode, a first transistor electrically connected between a first node of the driving transistor and a data line, and a second transistor of the driving transistor. It may include a second transistor electrically connected between the node and the reference voltage line, and a storage capacitor electrically connected between the first node and the second node of the driving transistor.

In each subpixel, a light shield may be positioned in each region of the driving transistor, the first transistor, and the second transistor.

The light shield positioned in the region of the driving transistor of the first subpixel may be electrically connected to the second node of the driving transistor of the first subpixel.

The light shield positioned in the region of the second transistor of the first subpixel is electrically connected to the gate node of the second transistor of the first subpixel or has an equipotential pattern corresponding to the gate node of the second transistor of the first subpixel. can be electrically connected to

According to the present embodiments as described above, by placing the light shield in the region of the transistors in each subpixel, the change in the characteristics of the transistor due to light is reduced, while the body effect that can occur in each transistor It is possible to provide an organic light emitting display panel and an organic light emitting display device having a light shield structure capable of reducing the influence of light.

In addition, according to the present embodiments, the effect of the body effect can be effectively reduced by varying the shape and connection position of the light shield located in the region of each transistor according to the function and role of each transistor, Through this, it is possible to provide an organic light emitting display panel and an organic light emitting display device having a multi-light shield structure capable of preventing an abnormal image phenomenon.

In addition, according to the present embodiments, it is possible to prevent a phenomenon in which the first transistor for transferring the data voltage to the gate node of the driving transistor in each subpixel is unintentionally turned on, and through this, the previous subpixel line or It is possible to provide an organic light emitting display panel and an organic light emitting display device having a multi-light shield structure capable of preventing a data mixing phenomenon in which a data voltage supplied from a next subpixel line affects a current subpixel line.

In addition, according to the present embodiments, it is possible to prevent a phenomenon in which the driving transistor in each subpixel or the second transistor used to sense the characteristic value of the organic light emitting diode is turned on unintentionally, thereby improving sensing accuracy. It is possible to provide an organic light emitting display panel and an organic light emitting display device having an improved multi-light shield structure.

In addition, according to the present embodiments, the parasitic capacitor between the source node (or drain node) of the driving transistor and the reference voltage line used to sense the characteristic values of the driving transistor or organic light emitting diode in each subpixel is reduced to improve sensing accuracy. It is possible to provide an organic light emitting display panel and an organic light emitting display device having a multi-light shield structure capable of improving light.

1 is a system configuration diagram of an organic light emitting display device according to the present embodiments.
2 and 3 are exemplary diagrams of a sub-pixel structure of an organic light emitting display device according to the present embodiments.
FIG. 4 is a view showing that a light shield is formed below a transistor in order to prevent a phenomenon in which a characteristic value of a transistor is changed by light in an organic light emitting display device according to the present embodiments.
5 is an equivalent circuit of a light shield formed in a circuit area of each subpixel and a subpixel in which the light shield is formed in an organic light emitting display device according to the present embodiments.
6 is a diagram illustrating a single light shield structure in which a light shield is connected to a second node of a driving transistor in order to improve operating characteristics of the driving transistor in the organic light emitting display device according to the present embodiments.
7 and 8 are diagrams for explaining an abnormal driving phenomenon that may occur due to a single light shield structure in an organic light emitting display device according to the present embodiments.
9 and 10 are diagrams schematically illustrating a multi-light shield structure in an organic light emitting display device according to the present embodiments.
11A, 11B, and 12 are exemplary diagrams of an A-type multi-light shield structure of an organic light emitting display device according to the present embodiments.
13A, 13B, 14A, 14B, 15A, and 15B are exemplary views of a B-type multi-light shield structure of an organic light emitting display device according to example embodiments.
16A and 16B are exemplary views of a C-type multi-light shield structure of an organic light emitting display device according to the present embodiments.
17A and 17B are exemplary diagrams of a D-type multi-light shield structure of an organic light emitting display device according to the present embodiments.
18A and 18B are exemplary diagrams of an E-type multi-light shield structure of an organic light emitting display device according to the present embodiments.
19A, 19B, 20A, 20B, 21A, and 21B are exemplary diagrams of an F-type multi-light shield structure of an organic light emitting display device according to example embodiments.
22A and 22B are exemplary diagrams of a G-type multi-light shield structure of an organic light emitting display device according to the present embodiments.
23 is a cross-sectional view of a connection structure of a light shield positioned in a region of a first transistor or a second transistor in an organic light emitting display device according to example embodiments.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Some embodiments of the present invention are described in detail below with reference to exemplary drawings. In adding reference numerals to components of each drawing, the same components may have the same numerals as much as possible even if they are displayed on different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description may be omitted.

Also, terms such as first, second, A, B, (a), and (b) may be used in describing the components of the present invention. These terms are only used to distinguish the component from other components, and the nature, sequence, order, or number of the corresponding component is not limited by the term. When an element is described as being “connected,” “coupled to,” or “connected” to another element, that element is or may be directly connected to that other element, but intervenes between each element. It will be understood that may be "interposed", or each component may be "connected", "coupled" or "connected" through other components.

1 is a system configuration diagram of an organic light emitting display device 100 according to the present embodiments.

Referring to FIG. 1 , in an organic light emitting display device 100 according to the present embodiments, a plurality of data lines DL and a plurality of gate lines GL are disposed, and a plurality of sub pixels (SP) The organic light emitting display panel 110, the data driver 120 driving the plurality of data lines DL, the gate driver 130 driving the plurality of gate lines GL, and the data driver 120 ) and the controller 140 controlling the gate driver 130.

The controller 140 controls the data driver 120 and the gate driver 130 by supplying various control signals to the data driver 120 and the gate driver 130 .

The controller 140 starts scanning according to the timing implemented in each frame, converts input image data input from the outside to suit the data signal format used by the data driver 120, and outputs the converted image data. , data drive is controlled at an appropriate time according to the scan.

The controller 140 may be a timing controller used in a typical display technology or a control device that further performs other control functions including a timing controller.

The data driver 120 drives the plurality of data lines DL by supplying data voltages to the plurality of data lines DL. Here, the data driver 120 is also referred to as a 'source driver'.

The gate driver 130 sequentially drives the plurality of gate lines GL by sequentially supplying scan signals to the plurality of gate lines GL. Here, the gate driver 130 is also referred to as a 'scan driver'.

The gate driver 130 sequentially supplies scan signals of an on voltage or an off voltage to the plurality of gate lines GL under the control of the controller 140 .

When a specific gate line is opened by the gate driver 130, the data driver 120 converts the image data received from the controller 140 into analog data voltages and supplies them to a plurality of data lines DL.

The data driver 120 is located on only one side (eg, upper or lower side) of the organic light emitting display panel 110 in FIG. : upper side and lower side) may be located both.

The gate driver 130 is located on only one side (eg, the left or right side) of the organic light emitting display panel 110 in FIG. Example: left and right) may be located on both sides.

The above-described controller 140 includes various types of input image data, including a vertical synchronization signal (Vsync), a horizontal synchronization signal (Hsync), an input data enable (DE) signal, a clock signal (CLK), and the like. Receive timing signals from outside (e.g. host system).

The controller 140 converts the input image data input from the outside to suit the data signal format used by the data driver 120 and outputs the converted image data, as well as the data driver 120 and the gate driver 130. In order to control, the data driver 120 and the gate driver 130 generate various control signals by receiving timing signals such as a vertical synchronization signal (Vsync), a horizontal synchronization signal (Hsync), an input DE signal, and a clock signal. output as

For example, in order to control the gate driver 130, the controller 140 includes a gate start pulse (GSP), a gate shift clock (GSC), and a gate output enable signal (GOE: It outputs various gate control signals (GCS: Gate Control Signal) including Gate Output Enable) and the like.

Here, the gate start pulse GSP controls the operation start timing of one or more gate driver integrated circuits constituting the gate driver 130 . The gate shift clock (GSC) is a clock signal commonly input to one or more gate driver integrated circuits and controls shift timing of scan signals (gate pulses). The gate output enable signal GOE specifies timing information of one or more gate driver integrated circuits.

In addition, the controller 140, in order to control the data driver 120, a source start pulse (SSP: Source Start Pulse), a source sampling clock (SSC: Source Sampling Clock), a source output enable signal (SOE: Source Output It outputs various data control signals (DCS) including Enable) and the like.

Here, the source start pulse SSP controls data sampling start timing of one or more source driver integrated circuits constituting the data driver 120 . The source sampling clock (SSC) is a clock signal that controls sampling timing of data in each source driver integrated circuit. The source output enable signal SOE controls output timing of the data driver 120 .

The data driver 120 may include at least one source driver integrated circuit (SDIC) to drive a plurality of data lines.

Each source driver integrated circuit (SDIC) is attached to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method. It may be connected to, directly disposed on the organic light emitting display panel 110, or may be integrated and disposed on the organic light emitting display panel 110 in some cases. In addition, each source driver integrated circuit (SDIC) may be implemented in a Chip On Film (COF) method mounted on a film connected to the organic light emitting display panel 110 .

Each source driver integrated circuit (SDIC) may include a shift register, a latch circuit, a digital to analog converter (DAC), an output buffer, and the like.

In some cases, each source driver integrated circuit (SDIC) may further include an analog to digital converter (ADC).

The gate driver 130 may include at least one gate driver integrated circuit (GDIC).

Each gate driver integrated circuit (GDIC) is connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method, or is connected to a gate in panel (GIP) method. ) type and directly disposed on the organic light emitting display panel 110, or may be integrated and disposed on the organic light emitting display panel 110 in some cases. In addition, each gate driver integrated circuit (GDIC) may be implemented in a chip on film (COF) method mounted on a film connected to the organic light emitting display panel 110 .

Each gate driver integrated circuit (GDIC) may include a shift register, a level shifter, and the like.

The organic light emitting display device 100 according to the present embodiments includes at least one source printed circuit board (S-PCB) required for circuit connection to at least one source driver integrated circuit (SDIC) and It may include a control printed circuit board (C-PCB) for mounting control parts and various electric devices.

At least one source driver integrated circuit (SDIC) may be mounted on the at least one source printed circuit board (S-PCB), or a film having at least one source driver integrated circuit (SDIC) mounted may be connected.

On the control printed circuit board (C-PCB), the controller 140 for controlling operations of the data driver 120 and the gate driver 130, the organic light emitting display panel 110, the data driver 120, and the gate driver A power controller that supplies various voltages or currents to 130 or the like or controls various voltages or currents to be supplied may be mounted.

The at least one source printed circuit board (S-PCB) and the control printed circuit board (C-PCB) may be circuitically connected through at least one connecting member.

Here, the connecting member may be a flexible printed circuit (FPC) or a flexible flat cable (FFC).

At least one source printed circuit board (S-PCB) and one control printed circuit board (C-PCB) may be integrated into one printed circuit board.

Each subpixel SP disposed on the organic light emitting display panel 110 may include a circuit element such as a transistor.

For example, when the organic light emitting display panel 110 is an organic light emitting display panel, each subpixel (SP) includes an organic light emitting diode (OLED) and a driving transistor for driving it. It is composed of circuit elements.

The type and number of circuit elements constituting each sub-pixel SP may be variously determined according to a provided function and a design method.

2 and 3 are exemplary views of a sub-pixel structure of the organic light emitting display device 100 according to the present embodiments.

Referring to FIGS. 2 and 3 , each subpixel (SP) arranged on the organic light emitting display panel 110 includes an organic light emitting diode (OLED) and a drive that drives the organic light emitting diode (OLED). A first transistor (which is controlled by a driving transistor (DT) and a first scan signal (SCAN1) and electrically connected between the first node (N1) of the driving transistor (DT) and the data line (DL) T1) and the second transistor T2 controlled by the second scan signal SCAN2 and electrically connected between the second node N2 of the driving transistor DT and the reference voltage line (RVL). , and a storage capacitor C1 electrically connected between the first node N1 and the second node N2 of the driving transistor DT.

As shown in FIGS. 2 and 3, a structure in which one subpixel (SP) includes three transistors (DT, T1, and T2) and one capacitor (C1) is referred to as a 3T (Transistor) 1C (Capacitor) structure. It is said.

An organic light emitting diode (OLED) may include a first electrode (eg, an anode electrode), an organic layer, and a second electrode (eg, a cathode electrode).

The driving transistor DT is a driving transistor that drives the organic light emitting diode OLED, and drives the organic light emitting diode OLED by supplying a driving current to the organic light emitting diode OLED.

In the driving transistor DT, the first node N1 may be electrically connected to the source node or the drain node of the first transistor T1 and may be a gate node. The second node N2 may be electrically connected to the first electrode of the organic light emitting diode OLED and the source node or drain node of the second transistor T2, and may be a source node or a drain node. The third node N3 may be electrically connected to a driving voltage line (DVL) that supplies the driving voltage EVDD, and may be a drain node or a source node.

The first transistor T1 is electrically connected between the data line DL and the first node N1 of the driving transistor DT, and is turned on and off by the first scan signal SCAN1 applied to the gate node. can be controlled

The first transistor T1 is turned on by the first scan signal SCAN1 to transfer the data voltage Vdata supplied from the data line DL to the first node N1 of the driving transistor DT. can

The second transistor T2 is electrically connected between the reference voltage line RVL and the second node N2 of the driving transistor DT, and is turned on and off by the second scan signal SCAN2 applied to the gate node. can be controlled.

The second transistor T2 is turned on by the second scan signal SCAN2 and transfers the reference voltage Vref supplied from the reference voltage line RVL to the second node N2 of the driving transistor DT. can do it

Also, the second transistor T2 may be turned on by the second scan signal SCAN2 to transfer the voltage of the second node N2 of the driving transistor DT to the reference voltage line RVL. This is a phenomenon that occurs when sensing characteristic values (eg, threshold voltage, mobility, etc.) of circuit elements such as the driving transistor DT and organic light emitting diode (OLED) in each subpixel SP.

The storage capacitor C1 is electrically connected between the first node N1 and the second node N2 of the driving transistor DT to maintain a constant voltage for one frame time.

The storage capacitor C1 is not a parasitic capacitor (eg, Cgs or Cgd) that is an internal capacitor existing between the first node N1 and the second node N2 of the driving transistor DT, but This is an external capacitor intentionally designed outside the driving transistor (DT).

The driving transistor DT, the first transistor T1 and the second transistor T2 may be n-type transistors or p-type transistors.

Meanwhile, referring to FIG. 2 , the gate node of the first transistor T1 and the gate node of the second transistor T2 may be connected to the same gate line GL.

Accordingly, the first scan signal SCAN1 applied to the gate node of the first transistor T1 and the second scan signal SCAN2 applied to the gate node of the second transistor T2 are the same scan signal SCAN. can

As shown in FIG. 2 , when the gate node of the first transistor T1 and the gate node of the second transistor T2 are commonly connected to one gate line GL, the subpixel SP has a “one scan structure”. is said to have

When designing a 1-scan structure for each sub-pixel SP, since only one gate line GL is required for each sub-pixel line, the aperture ratio of the organic light emitting display panel 110 can be significantly increased.

On the other hand, referring to FIG. 3 , the gate node of the first transistor T1 is connected to the first gate line GL1, and the gate node of the second transistor T2 is different from the first gate line GL1. It may be connected to the second gate line GL2.

Accordingly, the first scan signal SCAN1 applied to the gate node of the first transistor T1 and the second scan signal SCAN2 applied to the gate node of the second transistor T2 are separate signals.

As shown in FIG. 3 , when the gate node of the first transistor T1 and the gate node of the second transistor T2 are connected to correspond to the two gate lines GL1 and GL2, the subpixel SP has a “two scan structure” "It is said to have

As such, when a two-scan structure is designed for each subpixel SP, the first transistor T1 and the second transistor T2 can be individually controlled, so that the subpixel SP can be more precise and diverse. can be driven

On the other hand, transistors such as the driving transistor DT may deteriorate as the driving time increases, and characteristic values such as threshold voltage and mobility may change.

In addition, since there is a difference in driving time for each transistor, the degree of deterioration may be different, and the characteristic value change between each transistor may also be different. Accordingly, variation in characteristic values may occur between the respective transistors.

Variation in characteristic values between transistors may cause non-uniform luminance of the organic light emitting display panel 110, which may significantly degrade image quality.

In this way, the change in the characteristic value of the transistor, which is a factor of image quality deterioration, can also be caused by light.

For example, when external light hits a transistor (particularly, a channel region), a phenomenon in which the threshold voltage of the transistor shifts in a negative (-) direction occurs, resulting in deterioration in transistor device characteristics.

FIG. 4 is a view showing that a light shield (LS) is formed below a transistor in order to prevent a phenomenon in which characteristic values of the transistor are changed by light in the organic light emitting display device according to the present embodiments.

Referring to FIG. 4, when light is irradiated to a transistor composed of a source node (S), a drain node (D), and a gate node (G), in particular, when light is irradiated to a channel of the transistor, device characteristics of the transistor (e.g. threshold voltage, etc.) can vary greatly.

Accordingly, a light shield LS is formed in a region (eg, a lower portion) of the transistor.

Accordingly, it is possible to prevent light from reaching the transistor by the light shield LS, and also to prevent a change in device characteristics of the transistor.

The light shield LS may be made of a metal material capable of blocking transmission of light.

Meanwhile, the light shield LS is positioned below the gate node (gate electrode) of the transistor with an insulating layer interposed therebetween, and may serve as a body B of the transistor.

5 shows a light shield LS formed in a circuit area (CA) of each subpixel SP in the organic light emitting display device 100 according to the present embodiments, and a subpixel on which the light shield LS is formed. It is an equivalent circuit of (SP).

Referring to FIG. 5 , each subpixel SP has an emission area (EA) emitting light from the organic light emitting diode (OLED) and a circuit area (CA) in which a circuit for driving the organic light emitting diode (OLED) is formed. made up of

Referring to FIG. 5 , in order to prevent a change in transistor characteristics due to light, a light shield LS may be patterned on the entire surface of the circuit area CA where the transistors DT, T1 and T2 are located.

In this case, the light shield LS is a floating pattern to which no voltage is applied.

Meanwhile, as described above, the light shield LS serves as a body of each of the transistors DT, T1, and T2.

Accordingly, the light shield LS may serve as another gate node (also referred to as a back gate node) of each of the transistors DT, T1, and T2. Accordingly, the threshold voltage of each of the transistors DT, T1, and T2 may change or a desired operation may not be performed. This phenomenon is called "Body Effect".

FIG. 6 illustrates that, in the organic light emitting display device 100 according to the present embodiments, a light shield LS is provided at the second node N2 of the driving transistor DT to improve operating characteristics of the driving transistor DT. This is a diagram showing the structure of a connected single light shield (Single-LS).

Referring to FIG. 6 , in order to prevent the driving transistor DT, which greatly affects the overall driving characteristics of each subpixel SP, from being affected by the body effect, and to improve the operating characteristics of the driving transistor DT, a circuit The light shield LS patterned on the entire surface of the area CA may be connected to the second node N2 of the driving transistor DT.

Such a light shield structure is referred to as a “single light shield structure” because there is one light shield LS connected to the second node N2 of the driving transistor DT for each subpixel SP.

7 and 8 are diagrams for explaining an abnormal driving phenomenon that may occur due to a single light shield structure in the organic light emitting display device 100 according to the present exemplary embodiments.

7 and 8 , according to the single light shield structure, the voltage of the second node N2 of the driving transistor DT is applied to the light shield LS as a bias voltage BV.

As shown in FIG. 7 , in order to turn off the first transistor T1, a first scan signal SCAN1 corresponding to the turn-off level voltage VGL is applied to the gate node of the first transistor T1. When applied, the bias voltage BV applied to the light shield LS acts as another gate voltage of the first transistor T1, and a body effect may occur, and thus, the first transistor T1 It may turn on unintentionally.

8, in order to turn off the second transistor T2, the second scan signal SCAN2 corresponding to the turn-off level voltage VGL at the gate node of the second transistor T2. ) is applied, the bias voltage BV applied to the light shield LS serves as another gate voltage of the second transistor T2, and a body effect may occur. Accordingly, the second transistor T2 ) may be unintentionally turned on.

As shown in FIGS. 7 and 8 , a situation in which the first transistor T1 and/or the second transistor T2 are undesirably turned on due to the influence of the body effect may occur even during image driving, , can also occur during sensing operation.

For example, when the first transistor T1 to be turned off is turned on, the voltage supplied to the subpixel in the previous subpixel line (previous subpixel row) or the next subpixel line (next subpixel row) A data voltage may be supplied to a subpixel having a corresponding first transistor T1, and thus an image abnormality may occur. This phenomenon is called "data mixing".

As another example, the threshold voltage of the driving transistor DT is sensed with respect to the first subpixel electrically connected to the reference voltage line RVL that is electrically connected to an analog to digital converter and serves as a sensing line. If the second transistor T2 to be turned off is unnecessarily turned on in the second subpixel electrically connected to the reference voltage line RVL in another subpixel row while the sensing drive is in progress, The unnecessarily turned-on second transistor T2 transfers the voltage of the second node N2 of the driving transistor DT to the reference voltage line RVL.

Because of this, the analog-to-digital converter cannot accurately sense the voltage of the second node N2 of the driving transistor DT in the first subpixel, and thus a sensing error may occur. Such a sensing error may cause an error in calculating a compensation value for a threshold voltage deviation, resulting in an image abnormality.

Therefore, in the present embodiments, in order to prevent the abnormal driving phenomenon (unnecessarily turned-on phenomenon) of the first transistor T1 and/or the second transistor T2 due to the effect of the body effect, each subpixel (SP) ), we propose a multi-light shield (Multi-LS) structure having two or more light shields for each light shield.

9 and 10 are diagrams schematically illustrating the multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

9 and 10 , in the organic light emitting display device 100 according to the present embodiments, each subpixel includes an organic light emitting diode (OLED) and a driving transistor (DT) for driving the organic light emitting diode (OLED). ), the first transistor T1 electrically connected between the first node N1 of the driving transistor DT and the data line, and between the second node N2 of the driving transistor DT and the reference voltage line. and a storage capacitor C1 electrically connected between the first node N1 and the second node N2 of the driving transistor DT.

Here, the first node N1 of the driving transistor DT may be a gate node, and the second node N2 of the driving transistor DT may be a source node or a drain node.

In each subpixel, light shields LSd, LS1, and LS2 may be present in regions (eg, lower portions) of the driving transistor DT, the first transistor T1, and the second transistor T2, respectively.

Below, for convenience of explanation, the light shield structure will be described based on an arbitrary first subpixel.

9 and 10 , the light shield LSd positioned in the region of the driving transistor DT of the first subpixel connects to the second node N2 of the driving transistor DT of the corresponding first subpixel. can be electrically connected.

Referring to FIG. 9 , the light shield LS2 positioned in the region of the second transistor T2 of the first subpixel may be electrically connected to the gate node of the second transistor T2 of the first subpixel.

Referring to FIG. 10 , the light shield LS2 positioned in the region of the second transistor T2 of the first subpixel is an equipotential pattern PTN2 corresponding to the gate node of the second transistor T2 of the first subpixel. ) and electrically connected.

As described above, by electrically connecting the light shield LS2 located in the region of the second transistor T2 to a point other than the second node N2 of the driving transistor DT, the second transistor T2 A phenomenon in which the second transistor T2 is unintentionally turned on by the voltage of the second node N2 of the driving transistor DT in a situation where is to be turned off may be prevented. In other words, the second transistor T2 is less affected by the body effect and can be normally driven, and through this, an abnormality on the screen can be prevented.

In addition, when the multi-light shield structure according to the present exemplary embodiments is applied, a parasitic capacitor existing between the second node N2 of the driving transistor DT and the reference voltage line RVL can be significantly reduced.

Accordingly, when sensing a voltage for sensing a characteristic value of the driving transistor DT or the organic light emitting diode OLED through the reference voltage line RVL, a voltage that more accurately reflects the characteristic value may be sensed. According to such accurate voltage sensing, accurate characteristic value compensation is possible, and thus image quality can be improved.

Referring to FIGS. 9 and 10 , as described above, the light shield LS2 positioned in the region of the second transistor T2 of the first subpixel is the gate of the second transistor T2 of the first subpixel. It may correspond to an additional gate by being electrically connected to the node or electrically connected to the equipotential pattern PTN2 having an equipotential with the gate node of the second transistor T2 of the first subpixel.

Accordingly, the second transistor T2 of the first subpixel has a double-gate structure by utilizing the light shield LS2.

As described above, the second transistor T2 of the first subpixel has a double-gate structure using the light shield LS2, so that the influence of the body effect can be reduced and accurate on - Off operation can be performed.

The double-gate structure and the double-gate operation according to the present embodiments are not naturally generated by the body that may exist in the lower region of the transistors, but for various purposes such as preventing abnormal operation of the transistors, the body role It is intentionally made by electrically connecting the light shield to a specific point for the desired purpose.

Meanwhile, the equipotential pattern PTN2 corresponding to the gate node of the second transistor T2 of the first subpixel is electrically connected to the gate node of the second transistor T2 of the first subpixel, and The same signal as that of the gate node of the second transistor T2 is applied, and the pattern has an equipotential with the gate node of the second transistor T2 of the first subpixel.

The equipotential pattern PTN2 may be a pattern having the same voltage as that of the gate node of the second transistor T2 of the first subpixel (including electrodes, nodes, signal lines, etc.).

For example, when each subpixel has a 1-scan structure or a 2-scan structure, the equipotential pattern PTN2 is a second transistor T2 of a second subpixel that is another subpixel located on the same subpixel line as the first subpixel. may be a gate node of

As another example, when each subpixel has a 1 scan structure or a 2 scan structure, the equipotential pattern PTN2 may be a gate line electrically connected to the gate node of the second transistor T2 of the first subpixel.

As another example, when each subpixel has a 1-scan structure, the equipotential pattern PTN2 is the gate node of the first transistor T1 of the second subpixel, which is another subpixel located on the same subpixel line as the first subpixel. It could be.

As described above, the light shield LS2 positioned in the region of the second transistor T2 of the first subpixel is not only the gate node of the second transistor T2 of the first subpixel, but also the corresponding first subpixel. Since it can be electrically connected to the equipotential pattern PTN2 located outside, the double gate structure of the second transistor T2 can be made in various ways.

Below, various types of examples of the multi-light shield structure briefly described above will be described.

First, various examples of a multi-light shield structure for a case where each subpixel has a two-scan structure are described with reference to FIGS. 11A to 17B, and then, with reference to FIGS. Various examples of the multi-light shield structure for

However, in various examples of the multi-light shield structure, since the structure of the light shield Ld located in the region of the driving transistor DT does not change significantly, the light shield L1 located in the region of the first transistor T1 and The light shield L2 located in the region of the second transistor T2 will be mainly described.

11A, 11B, and 12 are exemplary diagrams of an A-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

FIG. 11A is an equivalent circuit of a first sub-pixel having a multi-light shield structure, and FIG. 11B is a diagram schematically illustrating areas and shapes of light shields LSd, LS1, and LS2 in FIG. 11A.

Referring to FIGS. 11A, 11B, and 12 , the light shield LSd located in the area of the driving transistor DT, the light shield L1 located in the area of the first transistor T1, and the second transistor T2 ), all of the light shields L2 located in the region may be electrically isolated.

Referring to FIGS. 11A, 11B, and 12 , the A-type multi-light shield structure includes a light shield LSd positioned in a region of a driving transistor DT and a first transistor T1 of a first subpixel. The light shield LS1 located in the region and the light shield LS2 located in the region of the second transistor T2 of the first subpixel are both separate light shields.

Referring to FIGS. 11A and 11B , the light shield LS1 positioned in the region of the first transistor T1 of the first subpixel is connected to the gate node of the first transistor T1 of the first subpixel and the contact hole ( Contact Hole) can be electrically connected.

Meanwhile, referring to FIG. 12 , the light shield LS1 positioned in the region of the first transistor T1 of the first subpixel is directly connected to the gate node of the first transistor T1 of the first subpixel. Instead, it may be electrically connected to the equipotential pattern PTN1 corresponding to the gate node of the first transistor T1 of the first subpixel.

Here, the equipotential pattern PTN1 corresponding to the gate node of the first transistor T1 of the first subpixel is electrically connected to the gate node of the first transistor T1 of the first subpixel, and The same signal as that of the gate node of the first transistor T1 is applied, and the pattern has an equipotential with the gate node of the first transistor T1 of the first subpixel.

The equipotential pattern PTN1 may be a pattern (including all electrodes, nodes, signal lines, etc.) having the same voltage as the gate node of the first transistor T1 of the first subpixel.

For example, when each subpixel has a 1-scan structure or a 2-scan structure, the equipotential pattern PTN2 is a first transistor T1 of a second subpixel that is another subpixel located on the same subpixel line as the first subpixel. may be a gate node of

As another example, when each subpixel has a 1-scan structure or a 2-scan structure, the equipotential pattern PTN2 may be a gate line electrically connected to the gate node of the first transistor T1 of the first subpixel.

As another example, when each subpixel has a 1-scan structure, the equipotential pattern PTN2 is the gate node of the second transistor T2 of the second subpixel, which is another subpixel located on the same subpixel line as the first subpixel. It could be.

As described above, in the case of the A-type multi-light shield structure, the light shield LS1 located in the region of the first transistor T1 is electrically connected to a point other than the second node N2 of the driving transistor DT. A phenomenon in which the first transistor T1 is unintentionally turned on by the voltage of the second node N2 of the driving transistor DT in a situation where the first transistor T1 should be turned off by connecting to can prevent In other words, since the first transistor T1 is less affected by the body effect, the above-mentioned data mixing phenomenon can be prevented, and thus an image quality improvement effect can be obtained.

In addition, when the A-type multi-light shield structure is applied, the light shield LSd located in the region of the driving transistor DT and the light shield LS1 located in the region of the first transistor T1 of the first subpixel ) and the light shield LS2 located in the region of the second transistor T2 of the first subpixel are all different separate light shields, so the role of each of the three transistors DT, T1, T2 And it can create a bias voltage state of the body (Body) suitable for the function.

In addition, in the case of the A-type multi-light shield structure, the size of the light shield LSd electrically connected to the second node N2 of the driving transistor DT is reduced compared to the single light shield structure, so that the driving transistor DT A parasitic capacitor existing between the second node N2 of and the reference voltage line RVL can be significantly reduced.

Accordingly, when sensing a voltage for sensing a characteristic value of the driving transistor DT or the organic light emitting diode OLED through the reference voltage line RVL, a voltage that more accurately reflects the characteristic value may be sensed. According to such accurate voltage sensing, accurate characteristic value compensation is possible, and thus image quality can be improved.

13A, 13B, 14A, 14B, 15A, and 15B are exemplary diagrams of a B-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

13A, 13B, 14A, 14B, 15A, and 15B, a first subpixel SP1, a second subpixel SP2, a third subpixel SP3, and a second subpixel SP3 are located on the same subpixel line. A multi-light shield structure in 4 sub-pixels (SP4) is shown.

FIG. 13B is a diagram schematically illustrating the area and shape of the light shields LSd, LS1, and LS2 in the equivalent circuit of FIG. 13A, and FIG. 14B is the area of the light shields LSd, LS1, and LS2 in the equivalent circuit of FIG. 14A. And Figure 15b is a diagram schematically showing the area and shape of the light shield (LSd, LS1, LS2) in the equivalent circuit of Figure 15a.

The type B multi-light shield structure illustrated in FIGS. 13a, 13b, 14a, 14b, 15a and 15b, like the A-type multi-light shield structure illustrated in FIGS. 11a, 11b and 12, The light shield LSd located in the region of the driving transistor DT, the light shield L1 located in the region of the first transistor T1, and the light shield L2 located in the region of the second transistor T2, They are all electrically isolated.

However, the B-type multi-light shield structure illustrated in FIGS. 13A, 13B, 14A, 14B, 15A, and 15B includes the light shield LS1 positioned in the region of the first transistor T1 and the second light shield LS1. A light shield LS2 located in the region of the transistor T2 is formed in a long pattern.

As a result, the B-type multi-light shield structure illustrated in FIGS. 13a, 13b, 14a, 14b, 15a, and 15b, the A-type multi-light shield structure illustrated in FIGS. 11a, 11b, and 12 In comparison, the number of contact holes can be reduced, and thus the aperture ratio of the organic light emitting display panel 110 can be increased.

Referring to FIGS. 13A, 13B, 14A, 14B, 15A, and 15B , the light shield LS1 positioned in the region of the first transistor T1 of the first subpixel includes the first subpixel. is a first long pattern commonly located in all regions of the first transistor T1 of each of the two or more sub-pixels SP1, ..., SP4.

Further, the light shield LS2 positioned in the region of the second transistor T2 of the first subpixel SP1 is provided for each of the two or more subpixels SP1, ..., SP4 including the first subpixel SP1. It is a second long pattern commonly located in all regions of the second transistor T2 of .

Referring to FIGS. 13A, 13B, 14A, and 14B, the light shield LS1, which is a first long pattern, is a gate of at least one first transistor T1 among two or more subpixels SP1, ..., SP4. It can be electrically connected to the node.

For example, the multi-light shield structure of FIGS. 13A and 13B includes a first transistor T1 electrically connected to a light shield LS1 that is a first long pattern among two or more subpixels SP1, ..., SP4. The subpixel to be used is the second subpixel SP2.

As another example, the multi-light shield structure of FIGS. 14A and 14B includes a first transistor T1 electrically connected to a light shield LS1 that is a first long pattern among two or more subpixels SP1, ..., SP4. The sub-pixel to be is the first sub-pixel SP1.

Meanwhile, referring to FIGS. 15A and 15B , the light shield LS1, which is a first long pattern, is not directly connected to the gate node of the first transistor T1 and is connected to two or more subpixels SP1, ..., SP4, respectively. may be electrically connected to the first gate line GL1 connected to the gate node of the first transistor T1 of the active region A/A.

Referring to FIGS. 13A, 13B, 14A, and 14B, the light shield LS2, which is a second long pattern, is a gate of at least one second transistor T2 among two or more subpixels SP1, ..., SP4. It can be electrically connected to the node.

Here, two or more subpixels SP1, ..., SP4 are subpixels positioned on the same subpixel line.

For example, in the multi-light shield structure of FIGS. 13A and 13B, the second transistor T2 electrically connected to the light shield LS2 that is the second long pattern among the two or more subpixels SP1, ..., SP4 is included. The subpixel to be used is the second subpixel SP2.

As another example, the multi-light shield structure of FIGS. 14A and 14B includes a second transistor T2 electrically connected to a light shield LS2 that is a second long pattern among two or more subpixels SP1, ..., SP4. The sub-pixel to be is the first sub-pixel SP1.

Meanwhile, referring to FIGS. 15A and 15B , the second long pattern, the light shield LS2, is not directly connected to the gate node of the second transistor T2, and is connected to two or more subpixels SP1, ..., SP4, respectively. It may be electrically connected to the second gate line GL2 connected to the gate node of the second transistor T2 of the active region A/A.

In the case of applying the B-type multi-light shield structure described above, the two light shields LS1 and LS2 related to the first and second transistors T1 and T2 do not individually exist for each subpixel, but two Since it exists in the form of a long pattern across the above sub-pixels SP1, ..., SP4, the number of contact holes can be considerably reduced, and thus, the aperture ratio of the organic light emitting display panel 110 can be increased.

Meanwhile, in the case of the B-type multi-light shield structure, two or more light shield structures are formed by utilizing one light shield LS1 in the form of a first long pattern and one light shield LS2 in the form of a second long pattern. The subpixels SP1, ..., SP4 may be, for example, subpixels constituting one pixel.

For example, one pixel includes a first subpixel (SP) emitting red light (R), a second subpixel (SP2) emitting white light (W), and a second subpixel (SP2) emitting blue light (B). It may be composed of three sub-pixels SP3 and a fourth sub-pixel SP4 emitting green light (G).

As described above, by forming the B-type multi-light shield structure in units of one pixel, it is possible to efficiently prevent abnormal driving of transistors having similar driving characteristics.

In the multi-light shield structures illustrated above, the light shield LS1 located in the region of the first transistor T1 is located in the region of the driving transistor DT and the light shield LSd located in the region of the driving transistor DT and the second transistor T2. It is formed in a form separated from the light shield LS2 located in the area.

Below, a multi-light shield structure in which the light shield LS1 located in the region of the first transistor T1 is integrated with the light shield LSd located in the region of the driving transistor DT is shown in FIGS. 16A and 16B. Explain with reference to.

16A and 16B are exemplary diagrams of a C-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

FIG. 16A is an equivalent circuit of a first sub-pixel having a multi-light shield structure, and FIG. 16B is a diagram schematically illustrating areas and shapes of light shields LSd, LS1, and LS2 in FIG. 16A.

In the C-type multi-light shield structure illustrated in FIGS. 16A and 16B , the light shield LS1 located in the region of the first transistor T1 and the light shield LSd located in the region of the driving transistor DT and It is a connected or unified structure.

Referring to FIG. 16A , the light shield LS1 positioned in the region of the first transistor T1 of the first subpixel is electrically connected to the second node N2 of the driving transistor DT of the first subpixel. can

Accordingly, the driving transistor ( The light shield LSd located in the area of DT may have the same voltage state.

In addition, the driving transistor DT is electrically connected to the light shield LS1 positioned in the region of the first transistor T1 of the first subpixel and the second node N2 of the driving transistor DT of the first subpixel. ), the light shield LSd located in the region is physically integrated (unified).

The light shield LS1 positioned in the region of the first transistor T1 of the first subpixel and the driving transistor DT electrically connected to the second node N2 of the driving transistor DT of the first subpixel. An integrated light shield LSd located in the area is referred to as an integrated light shield LSa.

The integrated light shield LSa may be electrically connected to the second node N2 of the driving transistor DT.

As described above, when the C-type multi-light shield structure is applied, the light shield LS1 positioned in the region of the first transistor T1 of the first subpixel and the driving transistor DT of the first subpixel While light shield structure design is facilitated by integrally forming the light shield LSd located in the region, the second transistor T2 is normally operated regardless of the voltage state of the second node N2 of the driving transistor DT. Since driving (image driving, sensing driving) can be performed, image quality can be improved.

In addition, in the case of the C-type multi-light shield structure, the size of the light shield LSd electrically connected to the second node N2 of the driving transistor DT is reduced compared to the single light shield structure, so that the driving transistor DT A parasitic capacitor existing between the second node N2 of and the reference voltage line RVL can be significantly reduced.

Accordingly, when sensing a voltage for sensing a characteristic value of the driving transistor DT or the organic light emitting diode OLED through the reference voltage line RVL, a voltage that more accurately reflects the characteristic value may be sensed. According to such accurate voltage sensing, accurate characteristic value compensation is possible, and thus image quality can be improved.

17A and 17B are exemplary diagrams of a D-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

Referring to FIGS. 17A and 17B , in the case of the D-type multi-light shield structure, the light shield LSd located in the region of the driving transistor DT is electrically connected to the second node N2 of the driving transistor DT. The light shield LS2 connected to and positioned in the region of the second transistor T2 is electrically connected to the gate node of the second transistor T2 or the equipotential pattern PTN2 corresponding thereto, and the first transistor T1 The light shield LS1 located in the region of is a floating pattern to which a bias voltage is not applied.

In the case of the aforementioned D-type multi-light shield structure, a phenomenon in which the first transistor T1 is turned on undesirably by the voltage state of the second node N2 of the driving transistor DT, compared to the single light shield structure. to prevent The data mixing phenomenon can be prevented, and accordingly, the image abnormality phenomenon can be prevented.

In addition, in the case of the D-type multi-light shield structure, like the A, B, and C-type multi-light shield structures, the size of the light shield LSd electrically connected to the second node N2 of the driving transistor DT is Compared to the single light shield structure, the parasitic capacitor existing between the second node N2 of the driving transistor DT and the reference voltage line RVL can be significantly reduced, and thus, the reference voltage line RVL Through this, when sensing the voltage for sensing the characteristic value of the driving transistor DT or the organic light emitting diode OLED, it is possible to sense a voltage that more accurately reflects the characteristic value, thereby improving image quality through accurate compensation. .

The aforementioned D-type multi-light shield structure may be applied to both a 1-scan structure and a 2-scan structure.

Below, a multi-light shield structure that can be applied when a subpixel has a 1-scan structure will be described.

18A and 18B are exemplary diagrams of an E-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

Referring to FIGS. 18A and 18B , in the case of the E-type multi-light shield structure, the light shield LSd located in the region of the driving transistor DT is electrically connected to the second node N2 of the driving transistor DT. The light shield LS1 positioned in the area of the first transistor T1 of the first subpixel and the light shield LS2 positioned in the area of the second transistor T2 of the first subpixel may be integrated. there is.

An integrated light shield in which the light shield LS1 located in the area of the first transistor T1 of the first subpixel and the light shield LS2 located in the area of the second transistor T2 of the first subpixel are integrated. (LSa).

In the case of the above-described E-type multi-light shield structure, compared to the single light shield structure, the first transistor T1 and the second transistor T2 are operated by the voltage state of the second node N2 of the driving transistor DT. Prevent unwanted turn-on. Data mixing and sensing data errors may be prevented, and thus, an abnormal image phenomenon may be prevented.

In addition, in the case of the E-type multi-light shield structure, like the A, B, C, and D-type multi-light shield structures, the light shield LSd electrically connected to the second node N2 of the driving transistor DT. Since the size is greatly reduced compared to the single light shield structure, the parasitic capacitor existing between the second node N2 of the driving transistor DT and the reference voltage line RVL can be significantly reduced, and thus, the reference voltage line Through (RVL), when sensing the voltage for sensing the characteristic value of the driving transistor (DT) or organic light emitting diode (OLED), it is possible to sense the voltage that more accurately reflects the characteristic value, thereby improving image quality through accurate compensation. can make it

19A, 19B, 20A, 20B, 21A, and 21B are exemplary views of the F-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

19A, 19B, 20A, 20B, 21A, and 21B, a first subpixel SP1, a second subpixel SP2, a third subpixel SP3, and a second subpixel SP3 are located on the same subpixel line. A multi-light shield structure in 4 sub-pixels (SP4) is shown.

Referring to FIGS. 19A, 19B, 20A, 20B, 21A, and 21B , the F-type multi-light shield structure is based on the E-type multi-light shield structure, and the first transistor of the first subpixel The integrated light shield LSa in which the light shield LS1 located in the region T1 and the light shield LS2 located in the region of the second transistor T2 of the first subpixel are integrated is formed in a long pattern. .

As a result, the F-type multi-light shield structure illustrated in FIGS. 19A, 19B, 20A, 20B, 21A, and 21B can reduce the number of contact holes compared to the E-type multi-light shield structure, , As a result, the aperture ratio of the organic light emitting display panel 110 can be increased.

As described above, in the F-type multi-light shield structure, the integrated light shield LSa includes the first transistor T1 of each of the two or more subpixels SP1, ..., SP4 including the first subpixel SP1. ) and a long pattern commonly located in both regions of the second transistor T2.

As shown in FIGS. 19A and 19B , the integrated light shield LSa may be electrically connected to a gate node of at least one first transistor T1 among two or more subpixels SP1 , ... , SP4 .

Alternatively, as shown in FIGS. 20A and 20B , the integrated light shield LSa may be electrically connected to a gate node of at least one second transistor T2 of two or more subpixels SP1, ..., SP4. there is.

Alternatively, as shown in FIGS. 201A and 21B, the integrated light shield LSa includes a gate node of a first transistor T1 and a second transistor T2 of each of two or more subpixels SP1, ..., SP4. It may be electrically connected to the gate line GL commonly connected to the gate node of the active area A/A.

When the above-described F-type multi-light shield structure is applied, the integrated light shield LSa related to the first and second transistors T1 and T2 does not exist individually for each subpixel, but two or more subpixels ( Since it exists in the form of a long pattern over SP1, ..., SP4), the number of contact holes can be significantly reduced, and thus, the aperture ratio of the organic light emitting display panel 110 can be increased.

Meanwhile, in the case of the F-type multi-light shield structure, two or more sub-pixels (SP1, ..., SP4) in which the multi-light shield structure is formed by utilizing one integrated light shield (LSa) in the form of a first long pattern are, for example, , may be subpixels constituting one pixel.

For example, one pixel includes a first subpixel (SP) emitting red light (R), a second subpixel (SP2) emitting white light (W), and a second subpixel (SP2) emitting blue light (B). It may be composed of three sub-pixels SP3 and a fourth sub-pixel SP4 emitting green light (G).

As described above, by forming the F-type multi-light shield structure in units of one pixel, it is possible to efficiently prevent abnormal driving of transistors having similar driving characteristics.

22A and 22B are exemplary diagrams of a G-type multi-light shield structure of the organic light emitting display device 100 according to the present embodiments.

In the G-type multi-light shield structure, the light shield LSd located in the region of the driving transistor DT is electrically connected to the second node N2 of the driving transistor DT, and the first subpixel of the first subpixel The light shield LS1 located in the region of the transistor T1 and the light shield LS2 located in the region of the second transistor T2 of the first subpixel are integrated. … … … ..may be an integrated light shield (LSa).

An integrated light shield in which the light shield LS1 located in the area of the first transistor T1 of the first subpixel and the light shield LS2 located in the area of the second transistor T2 of the first subpixel are integrated. (LSa).

The integrated light shield LSa is commonly positioned in both the first transistor T1 region and the second transistor T2 region of the first subpixel.

In addition, the integrated light shield LSa may be electrically connected to the gate node of the first transistor T1 of the first subpixel or have an equipotential pattern corresponding to the gate node of the first transistor T1 of the first subpixel ( It can be electrically connected to PTN1).

In the case of the above-described G-type multi-light shield structure, compared to the single light shield structure, the first transistor T1 and the second transistor T2 are operated by the voltage state of the second node N2 of the driving transistor DT. Prevent unwanted turn-on. Data mixing and sensing data errors may be prevented, and thus, an abnormal image phenomenon may be prevented.

In addition, in the case of the G-type multi-light shield structure, like other types of multi-light shield structures, the size of the light shield LSd electrically connected to the second node N2 of the driving transistor DT is a single light shield structure. , it is possible to significantly reduce the parasitic capacitor existing between the second node N2 of the driving transistor DT and the reference voltage line RVL. Accordingly, through the reference voltage line RVL, When sensing the voltage for sensing the characteristic values of the driving transistor DT or the organic light emitting diode (OLED), it is possible to sense a voltage that more accurately reflects the characteristic values, so that image quality can be improved through accurate compensation.

23 is a cross-sectional view of a connection structure of a light shield LS1 or LS2 2330 positioned in an area of the first transistor T1 or the second transistor T2 in the organic light emitting display device 100 according to the present embodiments.

Referring to FIG. 23 , a buffer layer 2320 is positioned on a substrate 2310, and a light shield 2330 is positioned in a region of the first transistor T1 or the second transistor T2 on the buffer layer 2320.

A gate insulating film 2340 is on the light shield 2330, and a gate material layer 2350 on which a gate node of the first transistor T1 or the second transistor T2 is positioned is positioned.

An interlayer insulating layer 2360 is positioned on the gate material layer 2350 .

Referring to FIG. 23 , the gate material layer 2350 where the gate node of the first transistor T1 or the second transistor T2 is located and the region of the first transistor T1 or the second transistor T2 are located. The light shield 2330 may be connected by a connection pattern 2370.

The connection pattern 2370 contacts the upper or lower surface of the light shield 2330 and the side surface of the gate material layer 2350 through side contact holes.

This connection method is also referred to as a side contact method.

Here, the connection pattern 2370 may be, for example, a source-drain material.

Generally, when two electrodes (wiring) are connected to a third electrode (wiring), two contact holes are required. That is, the light shield 2330 and the gate material layer 2350 may be connected through a connection pattern 2370 that is a third electrode.

In addition, when side contact holes are used, the area occupied by the contact holes is reduced, so that the aperture ratio of the organic light emitting display panel 110 can be increased.

In addition, when the side connection between the light shield 2330 and the gate material layer 2350 is made through the connection pattern 2370, the light shield 2330 and the gate material layer 2350 are electrically connected by the width of the connection pattern 2370. The width can be turned on to reduce wiring resistance, thereby improving electrical characteristics.

According to the present embodiments as described above, by placing the light shield in the region of the transistors in each subpixel, the change in the characteristics of the transistor due to light is reduced, while the body effect that can occur in each transistor The organic light emitting display panel 110 and the organic light emitting display device 100 having a light shield structure capable of reducing the influence of light can be provided.

In addition, according to the present embodiments, the effect of the body effect can be effectively reduced by varying the shape and connection position of the light shield located in the region of each transistor according to the function and role of each transistor, Through this, it is possible to provide the organic light emitting display panel 110 and the organic light emitting display device 100 having a multi-light shield structure capable of preventing an abnormal image phenomenon.

In addition, according to the present embodiments, it is possible to prevent a phenomenon in which the first transistor for transferring the data voltage to the gate node of the driving transistor in each subpixel is unintentionally turned on, and through this, the previous subpixel line or An organic light emitting display panel 110 and an organic light emitting display device 100 having a multi-light shield structure capable of preventing a data mixing phenomenon in which a data voltage supplied from a next sub-pixel line affects a current sub-pixel line are provided. can do.

In addition, according to the present embodiments, it is possible to prevent a phenomenon in which the driving transistor in each subpixel or the second transistor used to sense the characteristic value of the organic light emitting diode is turned on unintentionally, thereby improving sensing accuracy. An organic light emitting display panel 110 and an organic light emitting display device 100 having an improved multi-light shield structure can be provided.

In addition, according to the present embodiments, the parasitic capacitor between the source node (or drain node) of the driving transistor and the reference voltage line used to sense the characteristic values of the driving transistor or organic light emitting diode in each subpixel is reduced to improve sensing accuracy. It is possible to provide an organic light emitting display panel 110 and an organic light emitting display device 100 having a multi-light shield structure capable of improving light.

The above description and accompanying drawings are only illustrative of the technical idea of the present invention, and those skilled in the art can combine the configuration within the range that does not deviate from the essential characteristics of the present invention. , various modifications and variations such as separation, substitution and alteration will be possible. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed according to the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

100: organic light emitting display device
110: organic light emitting display panel
120: data driver
130: gate driver
140: controller

Claims (18)

an organic light emitting display panel in which a plurality of subpixels defined by a plurality of data lines and a plurality of gate lines are arranged in a matrix type;
a data driver driving the plurality of data lines; and
A gate driver driving the plurality of gate lines;
Each subpixel,
An organic light emitting diode, a driving transistor for driving the organic light emitting diode, a first transistor electrically connected between a first node of the driving transistor and a data line, and electrically connected between a second node of the driving transistor and a reference voltage line. It is configured to include a second transistor connected to and a storage capacitor electrically connected between a first node and a second node of the driving transistor,
In each of the subpixels, a light shield is positioned in each region of a driving transistor, a first transistor, and a second transistor;
A light shield positioned in a region of a driving transistor of a first subpixel is electrically connected to a second node of the driving transistor of the first subpixel;
The light shield positioned in the region of the second transistor of the first subpixel is electrically connected to the gate node of the second transistor of the first subpixel or corresponds to the gate node of the second transistor of the first subpixel. It is electrically connected to the equipotential pattern that becomes,
A gate material layer where the gate node of the second transistor is located and a light shield located in a region of the second transistor are connected by a connection pattern;
The connection pattern is
An organic light emitting display device directly contacting a top or bottom surface of the light shield and directly contacting a side surface of the gate material layer. According to claim 1,
An equipotential pattern corresponding to the gate node of the second transistor of the first subpixel,
A pattern to which the same signal is applied by being electrically connected to a gate node of a second transistor of the first subpixel,
A gate node of a second transistor of a second subpixel that is another subpixel located on the same subpixel line as the first subpixel;
a gate line electrically connected to a gate node of a second transistor of the first subpixel;
An organic light emitting display device that is a gate node of a first transistor of the second subpixel. According to claim 1,
A gate node of a first transistor and a gate node of a second transistor in each subpixel are connected to different gate lines. According to claim 3,
A light shield positioned in a region of a first transistor of the first subpixel and a light shield positioned in a region of a second transistor of the first subpixel are separate light shields;
The light shield located in the region of the first transistor of the first subpixel,
electrically connected to a gate node of a first transistor of the first subpixel;
An organic light emitting display device electrically connected to an equipotential pattern corresponding to a gate node of a first transistor of the first subpixel. According to claim 4,
The light shield located in the region of the first transistor of the first subpixel,
A first long pattern commonly located in all regions of a first transistor of each of two or more subpixels including the first subpixel;
The light shield located in the region of the second transistor of the first subpixel,
An organic light emitting display device comprising a second long pattern commonly located in all regions of the second transistor of each of two or more subpixels including the first subpixel. According to claim 5,
The light shield, which is the first long pattern,
electrically connected to a gate node of a first transistor of at least one of the two or more subpixels or electrically connected to a first gate line connected to a gate node of a first transistor of each of the two or more subpixels in an active region;
The light shield, which is the second long pattern,
An organic light emitting diode electrically connected to a gate node of at least one second transistor among the two or more subpixels or electrically connected to a second gate line connected to a gate node of a second transistor of each of the two or more subpixels in an active region. display device. According to claim 5,
The two or more sub-pixels are sub-pixels constituting one pixel. According to claim 1,
The light shield located in the region of the first transistor of the first subpixel,
An organic light emitting display device electrically connected to a second node of a driving transistor of the first subpixel. According to claim 8,
The light shield positioned in the region of the first transistor of the first subpixel and the light shield positioned in the region of the driving transistor of the first subpixel are integrated light shields. According to claim 1,
The organic light emitting display device of claim 1 , wherein the light shield positioned in the region of the first transistor of the first subpixel is a floating pattern to which no bias voltage is applied. According to claim 1,
A gate node of the first transistor and a gate node of the second transistor are commonly connected to one gate line. According to claim 11,
The light shield positioned in the region of the first transistor of the first subpixel and the light shield positioned in the region of the second transistor of the first subpixel are integrated light shields. According to claim 12,
The integrated light shield,
An organic light emitting display device having a long pattern commonly located in both regions of a first transistor and a second transistor of each of two or more subpixels including the first subpixel. According to claim 13,
The integrated light shield,
electrically connected to a gate node of at least one first or second transistor of the two or more subpixels;
An organic light emitting display device electrically connected in an active area to a gate line commonly connected to a gate node of a first transistor and a gate node of a second transistor of each of the two or more subpixels. According to claim 13,
The two or more sub-pixels are sub-pixels constituting one pixel. According to claim 1,
A gate material layer where the gate node of the second transistor is located and a light shield located in a region of the second transistor are connected by a connection pattern;
The connection pattern is
An organic light emitting display device contacting an upper or lower surface of the light shield and contacting a side surface of the gate material layer. According to claim 1,
The organic light emitting display device of claim 1 , wherein the light shield positioned in the region of the second transistor of the first subpixel is an additional gate. multiple data lines;
multiple gate lines; and
a plurality of subpixels defined by the plurality of data lines and the plurality of gate lines and arranged in a matrix type;
Each subpixel,
An organic light emitting diode, a driving transistor for driving the organic light emitting diode, a first transistor electrically connected between a first node of the driving transistor and a data line, and electrically connected between a second node of the driving transistor and a reference voltage line. It is configured to include a second transistor connected to and a storage capacitor electrically connected between a first node and a second node of the driving transistor,
In each of the subpixels, a light shield is positioned in each region of a driving transistor, a first transistor, and a second transistor;
The light shield located in the region of the driving transistor of the first subpixel,
electrically connected to a second node of a driving transistor of the first subpixel;
The light shield located in the region of the second transistor of the first subpixel,
electrically connected to a gate node of a second transistor of the first subpixel;
electrically connected to an equipotential pattern corresponding to a gate node of a second transistor of the first subpixel;
A gate material layer where the gate node of the second transistor is located and a light shield located in a region of the second transistor are connected by a connection pattern;
The connection pattern is
An organic light emitting display panel that directly contacts a top or bottom surface of the light shield and directly contacts a side surface of the gate material layer.

Images