KR102479673B1 - Organic light emitting diode display device and method for manufacturing the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device and a manufacturing method thereof.
More particularly, the present invention relates to an organic light emitting display device in which the number of masks and processes are reduced without using a photoresist by using exposure through a halftone mask and a manufacturing method thereof.
Through this, it is possible to provide an organic light emitting display device in which the contact rate between the common electrode and the auxiliary electrode is increased and the influence of the horizontal current between adjacent sub-pixels is minimized.

Description

Organic light emitting display device and manufacturing method thereof

The present invention relates to an organic light emitting display device and a manufacturing method thereof, and more particularly, to an organic light emitting display device and a manufacturing method thereof in which the number of masks and processes are reduced by using a bank layer exposure.

Display devices are devices that visually display data, such as liquid crystal displays, electrophoretic displays, organic light emitting displays, and inorganic EL displays. ), a field emission display, a surface-conduction electron-emitter display, a plasma display, and a cathode ray display.

In particular, an organic light emitting display (OLED) is a self-emissive display device, and unlike a liquid crystal display (LCD), it does not require a separate light source and thus has the advantage of being lightweight and thin.

In addition, the contrast ratio is large, the response time is about several microseconds (μs), so it is easy to implement a moving picture, there is no restriction on the viewing angle, it is stable even at low temperatures, and it is driven by a low voltage of 5 to 15V DC. and easy to design.

In addition, the manufacturing process of the organic light emitting device is very simple because it can be said that deposition and encapsulation equipment are all.

Therefore, the organic light emitting device having the above advantages has recently been used in various IT devices such as TVs, monitors, and mobile phones.

Specifically, the organic light emitting element is largely composed of an array element and an organic light emitting diode. The array element is composed of a switching thin film transistor connected to a gate and a data line, and a driving thin film transistor connected to the organic light emitting diode, wherein the organic light emitting diode includes an anode (reflective electrode) connected to the driving thin film transistor, an organic light emitting layer, and It consists of a cathode (common electrode).

In the organic light emitting device having this configuration, light generated from the organic light emitting layer is emitted toward the reflective electrode or the common electrode, thereby displaying an image. Considering the aperture ratio, such an organic light emitting device is usually manufactured in a top emission (top emission) method in which an image is displayed using light emitted toward the common electrode.

A top emission type organic light emitting display device refers to an organic light emitting display device in which light emitted from an organic light emitting element is emitted to an upper portion of the organic light emitting display device. An organic light emitting display device in which light is emitted toward a top surface of a substrate on which thin film transistors for driving the organic light emitting display device are formed.

In the case of a top emission organic light emitting display device, a transparent electrode or a semi-transmissive electrode is used as a common electrode to emit light emitted from an organic light emitting layer upward.

In both cases of using a transparent electrode and a semi-transmissive electrode as the common electrode, the thickness of the cathode electrode layer is thinned to improve light transmittance. cause to increase

For this reason, in particular, in the case of a large-area organic light emitting display device, the resistance of the common electrode increases as the distance from the voltage supply pad increases, resulting in a more severe voltage drop, which may cause a luminance problem of the organic light emitting display device. there is.

In order to solve the voltage drop as described above, a method using an auxiliary electrode is used. Specifically, in order to prevent an increase in electrical resistance of the common electrode (cathode), a separate auxiliary electrode is electrically connected to the common electrode.

In particular, in order to electrically connect the auxiliary electrode and the common electrode, a method of forming a barrier rib having a reverse tapered shape on the auxiliary electrode is used.

1 is a cross-sectional view schematically illustrating an organic light emitting display device, and shows a structure including a reverse tapered barrier rib to implement a low-resistance common electrode.

The substrate 110 defines a plurality of pixel areas, may include glass, metal, or plastic, and may be formed of a flexible material.

A semiconductor layer 15 is positioned on the substrate 110 , and a gate insulating film 14 is positioned on the semiconductor layer 15 . A gate electrode 13 is positioned on the gate insulating layer 14 to correspond to the semiconductor layer 15 . An interlayer insulating film 120 is positioned on the gate electrode 13 , and a source electrode 11 and a drain electrode 12 are provided on the interlayer insulating film 120 .

The source electrode 11 and the drain electrode 12 are respectively connected to the semiconductor layer 15 through a contact hole penetrating the interlayer insulating film 120 . Thus, a thin film transistor (TFT) including the semiconductor layer 15, the gate electrode 13, the source electrode 11 and the drain electrode 12 is constituted.

A passivation layer 130 and a planarization layer 140 are deposited on the source electrode 11 and the drain electrode 12, and a reflective electrode 150 and an auxiliary electrode 160 are positioned on the planarization layer 140. .

The reflective electrode 150 is connected to the drain electrode 12 of the thin film transistor (TFT) through a via hole penetrating the planarization layer 140 and the passivation layer 130, and the auxiliary electrode 160 is connected to the reflective electrode 150 and located at a distance

A bank layer 170 is positioned on the reflective electrode 150 and the auxiliary electrode 160, and the bank layer 170 includes an opening exposing portions of the reflective electrode 150 and the auxiliary electrode 160 do.

In addition, an organic light emitting layer 180 is formed covering the reflective electrode and the bank layer exposed by the opening, and the opening on the side of the reflective electrode 150 defines a pixel and a light emitting region.

In the opening exposing a part of the auxiliary electrode 160 , the barrier rib 200 is positioned on the auxiliary electrode 160 . The organic light emitting layer 180 is also provided on the upper surface of the barrier rib 200, and the common electrode 190 is provided to cover the organic light emitting layer 180 and side surfaces of the barrier rib 200 and is connected to the auxiliary electrode 160.

Since the step coverage of the material used as the organic light emitting layer and the material used as the common electrode is not excellent, in the case of depositing the organic light emitting layer and the common electrode after forming the barrier rib in a reverse tapered shape, the auxiliary electrode covered by the barrier rib There is a concern that the organic light emitting layer and the common electrode are too thin or hardly deposited in the region.

In addition, in order to realize a low-resistance common electrode by connecting the common electrode and the auxiliary electrode through the barrier rib structure, a process for forming the barrier rib must be added.

The present invention has been made to solve the above problems, and an object of the present invention is to provide an organic light emitting display device having a high contact rate between a common electrode and an auxiliary electrode.

Another object of the present invention is to provide an organic light emitting display device in which the influence of lateral current between adjacent sub-pixels is minimized compared to a conventional organic light emitting display device.

Additionally, an object of the present invention is to provide a method for manufacturing an organic light emitting display device in which manufacturing cost is reduced by reducing the number of masks and mask processes.

Another object of the present invention is to provide a large-area top emission organic light emitting display device in which contact reliability between a common electrode and an auxiliary electrode is secured and luminance uniformity is improved.

According to one aspect of the present invention for achieving the above object, a part of the reflective electrode and a part of the auxiliary electrode are exposed by the shape of the bank layer, and a flattening layer having a shape of a concave groove between the reflective electrodes spaced apart from each other. An organic light emitting display device may be provided.

More specifically, an organic light emitting display device according to an aspect of the present invention includes a substrate on which a plurality of pixel areas are defined, a thin film transistor and a first auxiliary electrode positioned on the substrate, and a first auxiliary electrode on the thin film transistor and the auxiliary electrode, respectively. 1, a planarization layer having a second contact hole and having a concave groove toward the substrate in a region between the thin film transistor and the auxiliary electrode, a reflective electrode provided on the planarization layer and in contact with the thin film transistor through the first contact hole and a bank layer provided on the planarization layer and having first openings, second openings, and third openings in the first and second contact holes and grooves, respectively.

In particular, an edge of the reflective electrode may be covered with the bank layer. An edge of the lower reflective electrode having an area smaller than the surface area of the bank layer made of an organic insulating material is a portion left with a predetermined margin from the edge of the planarization layer, and may be covered by the bank layer during heat treatment due to thermal fluid characteristics of the bank layer. .

A second auxiliary electrode provided on the planarization layer and in contact with the first auxiliary electrode through a second contact hole may be further included.

The planarization layer may have a reverse tapered shape from the substrate in the first and second contact holes.

An organic light emitting layer continuously provided on the bank layer, the first opening and the groove, and provided on the second contact hole may further be included.

A common electrode provided on the organic emission layer and electrically connected to the first auxiliary electrode through the second contact hole may be further included.

The organic light emitting display device according to the present invention includes three types of openings due to the structure of the bank layer. The first opening exposes a portion of the reflective electrode. The first opening defines a pixel and a light emitting region.

The second opening may have a shape of a groove in which the planarization layer is concave toward the substrate. The second opening is provided between reflective electrodes spaced apart from each other, and an effect of a horizontal current between adjacent sub-pixels can be minimized.

The third opening is a point where a portion of the auxiliary electrode is exposed, and may form a contact structure between the auxiliary electrode and the common electrode.

In addition, a method of manufacturing an organic light emitting display device according to another aspect of the present invention includes forming a thin film transistor and a first auxiliary electrode on a substrate, and forming a planarization layer exposing the thin film transistor and the first auxiliary electrode on top of the thin film transistor. , forming a reflective electrode on the thin film transistor, the first auxiliary electrode and the planarization layer, depositing a bank material on the reflective electrode and forming a first bank pattern, etching the reflective electrode to form a second auxiliary electrode, ashing the first bank pattern to form a second bank pattern, and heat-treating the second bank pattern to form a bank layer. can

The forming of the first bank pattern may use a halftone mask. Through this, it is possible to reduce the number of mask processes by realizing the first bank pattern having various thicknesses only by exposing the bank material.

In the step of ashing the first bank pattern to form the second bank pattern, a planarization layer exposed by etching the reflective electrode may be removed to a predetermined thickness.

In the step of ashing the first bank pattern to form the second bank pattern, a first opening through which a portion of the reflective electrode is exposed, a second opening having a shape of a groove in which the planarization layer is concave toward the substrate, and the auxiliary electrode A third opening partially exposed may be formed.

In the step of heat-treating the second bank pattern to form the bank layer, an edge of the reflective electrode may be covered with the bank layer.

As described above, an organic light emitting display device having three types of openings can be manufactured by adjusting the bank layer without using a photoresist layer.

According to the present invention, since the number of masks and the number of mask processes can be reduced, the manufacturing cost of the organic light emitting display device can be reduced.

Also, according to the present invention, contact reliability between an auxiliary electrode and a common electrode can be improved in a large-area organic light emitting display device without a barrier rib structure.

In addition, according to the present invention, the luminance uniformity of the panel can be improved by adjusting the exposure of the bank layer to be applied to a large-area top emission organic light emitting display device.

In addition, according to the present invention, since the effect of lateral current between adjacent sub-pixels can be minimized, undesired adjacent sub-pixels do not emit light together, and light leakage defects of the organic light emitting display device can be improved. can

1 is a schematic cross-sectional view of a conventional organic light emitting display device having a reverse tapered barrier rib structure;
2 is a schematic cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention.
3 is a cross-sectional view showing a manufacturing method of a conventional organic light emitting display device.
4A to 4E are cross-sectional views illustrating a manufacturing method of an organic light emitting display device according to an exemplary embodiment of the present invention.
5 is a cross-sectional view schematically illustrating some processes in manufacturing an organic light emitting display device;

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings so that those skilled in the art can easily carry out the present invention. This invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

In order to clearly describe the present invention, parts irrelevant to the description are omitted, and the same reference numerals are assigned to the same or similar components throughout the specification.

In the drawings, the thickness is shown enlarged to clearly express the various layers and regions. And in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggerated.

Hereinafter, the provision or arrangement of an arbitrary element on the "upper (or lower)" or "upper (or lower)" of the base material means that the arbitrary element is provided or disposed in contact with the upper (or lower) surface of the base material. It is not meant to mean, but is not limited to, not including other components between the substrate and any components provided or disposed on (or under) the substrate.

Hereinafter, an organic light emitting display device and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

According to one aspect of the present invention, a substrate on which a plurality of pixel regions are defined, a thin film transistor and a first auxiliary electrode positioned on the substrate, and first and second contact holes are provided on the thin film transistor and the auxiliary electrode, respectively. , a planarization layer having a groove portion concave toward the substrate in a region between the thin film transistor and the auxiliary electrode, a reflective electrode provided on the planarization layer and in contact with the thin film transistor through a first contact hole, and provided on the planarization layer; It is possible to provide an organic light emitting display device including a bank layer having first openings, second openings, and third openings in the first and second contact holes and grooves, respectively.

2 is a schematic cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention, which includes a substrate 110, a thin film transistor 20, a first auxiliary electrode 160, and a planarization device. The layer 140 , the reflective electrode 150 , the bank layer 170 , the organic emission layer 180 and the common electrode 190 may be included.

The substrate 110 defines a plurality of pixel areas, may include glass, metal, or plastic, and may be formed of a flexible material. By way of non-limiting example, polyethersulfone, polyacrylate, polyether imide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyallylate, polyimide, polycarbonate, cellulose tri acetate, cellulose acetate propionate and the like.

A thin film transistor 20 including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode is provided on the substrate 110 . The illustrated thin film transistor 20 may be a driving thin film transistor connected to the reflective electrode 150 .

In general, in order for the organic light emitting layer 180 to emit light according to image information of a data signal input according to a scan signal, a switching thin film transistor and a driving thin film transistor are required.

In the switching thin film transistor, when a scan signal is applied to a gate electrode extending from a gate line, a data signal is received from a source electrode extending from a data line, and the data signal is transmitted to the gate electrode of the driving transistor.

In the driving thin film transistor, the current transmitted through the power supply line by the received data signal is transmitted to the reflective electrode 150 through the drain electrode, and emission of the organic light emitting layer 180 of the corresponding pixel is controlled by the current. .

In addition, in order to prevent abnormal driving that may occur due to delay and phase change of various electrical signals, a compensation circuit is provided for each pixel. An additional thin film transistor may be included in the compensation circuit, and during the time between the previous frame and the next frame A storage electrode may be included to maintain light emission of the organic light emitting layer 180 .

In addition, a second auxiliary electrode provided on the planarization layer and in contact with the first auxiliary electrode through a second contact hole may be further included. The auxiliary electrodes 160 and 161 are connected to the common electrode 190 to prevent driving problems due to an increase in resistance.

2 is a schematic cross-sectional view of an organic light emitting display device according to another embodiment of the present invention. In particular, the second auxiliary electrode 161 of the organic light emitting display device may be in contact with the first auxiliary electrode 160. and both may include at least one of the same material.

A planarization layer 140 may be deposited on the thin film transistor 20 and the auxiliary electrode 160, and the planarization layer may have a reverse tapered shape from the substrate in the first and second contact holes.

The planarization layer 140 may be, for example, acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene. It may contain materials with excellent heat resistance, such as

The reflective electrode 150 may be made of a material with high reflectivity to reflect the emitted light. For example, molybdenum (Mo), aluminum (Al), silver (Ag), chrome (Cr), gold It may include at least one of (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or may be made of an alloy containing at least one of the above materials.

The reflective electrode 150 may be positioned on the planarization layer 140 with a predetermined margin from an edge of the planarization layer 140 .

Referring to FIG. 2 , when the reflective electrode 150 is provided on the top surface of the planarization layer 140, it is provided with a length shorter than the horizontal length of the planarization layer 140 by a predetermined interval, so that the reflective electrode 150 ) is located on the upper surface of the planarization layer 140.

In addition, the reflective electrode 150 may be connected to the drain electrode of the thin film transistor 20 through a first contact hole penetrating the planarization layer 140 .

As shown in FIG. 2 , the bank layer 170 may include a first opening A, a second opening B, and a third opening C.

In particular, an edge of the reflective electrode 150 may be covered with the bank layer 170 . The bank layer 170 may be formed of at least one organic insulating material having a general photosensitive property, for example, polyimide, photoacrylic, and benzocyclobutene (BCB), and any organic insulating material having a thermofluidic property may be used.

Referring to FIG. 2 , the reflective electrode 150 is shorter than the horizontal length of the planarization layer 140 below and the bank layer 170 above the reflective electrode 150 . Therefore, by applying heat treatment to the bank material made of an organic insulating material, the bank layer 170 may cover a region where a predetermined margin remains from the edge of the planarization layer 140 . That is, the edge of the reflective electrode 150 is covered by the bank layer 170 .

The organic emission layer may further include an organic light emitting layer continuously provided on the bank layer, the first opening and the groove, and provided on the second contact hole.

As shown in FIG. 2 , the organic light emitting layer 180 may be provided independently on the top of the second auxiliary electrode of the second contact hole while continuously being provided on the top of the bank layer and on the first opening and groove.

Since the organic light emitting layer 180 is provided independently on top of the second auxiliary electrode, the common electrode 190 to be deposited later can come into contact with the second auxiliary electrode 161, thereby reducing the resistance of the common electrode provided in the reverse tapered shape. can compensate for

In addition, a common electrode provided on the organic emission layer and electrically connected to the auxiliary electrode through the second contact hole may be further included.

Meanwhile, the organic light emitting display device according to the present invention includes three types of openings depending on the area exposed by the structure of the bank layer.

Specifically, the first opening (A) is a region exposing a part of the reflective electrode 150, and the second opening (B) is a flattening area that is not an upper portion of the thin film transistor 20 or the auxiliary electrode 160. The layer 140 is a region having a concave groove, and the third opening C is a region exposing a part of the auxiliary electrode 160 .

The first opening A defines a pixel and a light emitting area. The common electrode 190 is electrically connected to the organic emission layer 180 provided in each pixel to supply electrons. When electrons supplied from the common electrode 190 combine with holes supplied from the reflective electrode 150 to emit light from the organic light emitting layer 180 , light may be emitted through the first opening A.

The second opening may have a shape of a groove in which the planarization layer is concave toward the substrate. The second opening is provided between reflective electrodes spaced apart from each other, and an effect of a horizontal current between adjacent sub-pixels can be minimized.

This prevents the occurrence of undesirable adjacent sub-pixels emitting light together, thereby improving the light leakage defect of the organic light emitting display device, thereby improving the optical reliability of the organic light emitting display device using the stacking of a plurality of light emitting units. can improve

The third opening is a point where a portion of the auxiliary electrode is exposed, and may form a contact structure between the auxiliary electrode and the common electrode. In a top emission organic light emitting display device, there is a method of improving contact with the auxiliary electrode 160 by installing a barrier rib structure to compensate for the high resistance of the common electrode 190 .

However, the provision of the barrier rib structure is inefficient because an additional process is required accordingly, and the thickness of the common electrode deposited by sputtering becomes non-uniform along the side surface of the barrier rib, resulting in a high resistance section.

Therefore, the present invention has the advantage of providing a third opening to increase contact between the auxiliary electrode and the common electrode without a barrier rib structure, particularly improving luminance uniformity of a large-area organic light emitting display device and reducing manufacturing cost.

In addition, in a method of manufacturing an organic light emitting display device according to another aspect of the present invention, a thin film transistor and a first auxiliary electrode are formed on a substrate, and a planarization layer exposing the thin film transistor and the first auxiliary electrode is formed on the substrate. and forming a reflective electrode on the thin film transistor, the first auxiliary electrode, and the planarization layer, depositing a bank material on the reflective electrode, and forming a first bank pattern, exposed by the first bank pattern etching the reflective electrode to form a second auxiliary electrode, ashing the first bank pattern to form a second bank pattern, and heat-treating the second bank pattern to form a bank layer. can do.

4 is a cross-sectional view showing a manufacturing method of a conventional organic light emitting display device, and it can be seen that exposure is performed twice or more to form pixels and banks.

First, a photoresist layer is deposited, and a first exposure is performed through a mask to form a photoresist pattern. Next, the reflective electrode in the portion where the photoresist layer is absent is etched to define sub-pixel divisions. Thereafter, a bank material is deposited and second exposure is performed through a mask to form a bank layer.

As such, a general organic light emitting display device manufacturing process requires two or more exposure processes. Accordingly, an object of the present invention is to provide a method of manufacturing an organic light emitting display device by using a bank material instead of a photoresist and using a single exposure.

4A to 4E are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 4A , first, a thin film transistor and a first auxiliary electrode are positioned on a substrate, and a planarization layer exposing the thin film transistor and the first auxiliary electrode is formed in a reverse tapered shape on the top. Thereafter, a reflective electrode is formed on the planarization layer, the thin film transistor, and the first auxiliary electrode, and a bank material is deposited on the reflective electrode.

Next, the first bank pattern may be formed by exposing the bank material.

The first bank pattern may use a halftone mask. The halftone mask may have a light blocking area, a transmission area, and a semi-transmission area. In addition, a multi-tone mask having regions having different light transmittances may be used. Through this, it is possible to reduce the number of mask processes by realizing the first bank pattern having various thicknesses through only a process of exposing the bank material once.

Specifically, after aligning a halftone mask on the bank material, a first bank pattern may be formed through processes such as diffraction exposure and development. Since the halftone mask is used, the first bank pattern is formed with different steps according to the openness of the halftone mask.

Referring to FIG. 4B , a first bank pattern positioned in a sub-pixel in which the reflective electrode does not need to be etched is formed to have a first thickness (a), which later corresponds to the first opening (A). The reflective electrode 150 needs to be etched, and the first bank pattern positioned between the thin film transistor and the auxiliary electrode is a groove formed to a second thickness b, which corresponds to the second opening B later. In addition, the first bank pattern positioned above the auxiliary electrode 160 is removed later to expose the auxiliary electrode 160 and is formed to a third thickness (c).

Referring to FIG. 4C , the reflective electrode exposed by the first bank pattern may be etched to be divided into a reflective electrode 150 and a second auxiliary electrode 161 . At this time, the edges of the reflective electrode 150 and the second auxiliary electrode 161 are implemented with a shorter length leaving a predetermined margin on the edge side of the upper bank pattern. This structure enables a structure in which the bank layer covers the edge of the reflective electrode during subsequent heat treatment.

Referring to FIG. 4D , a second bank pattern may be formed by ashing the first bank pattern. The second bank pattern has an overall thickness smaller than that of the first bank pattern. The ashing process does not require a separate mask and can remove a bank pattern having a certain thickness.

In addition, the planarization layer exposed by etching the reflective electrode in FIG. 4C is removed by a certain thickness to form a groove, and the bank layer on top of the second auxiliary electrode 161 contacting the first auxiliary electrode 160 is all removed. become non-existent Accordingly, when the common electrode is deposited later, a structure in which the common electrode and the auxiliary electrode contact each other may be implemented, and resistance of the common electrode may be compensated for.

That is, a second bank pattern may be formed by ashing the first bank pattern. In this case, a first opening through which a part of the reflective electrode is exposed, a second opening having a shape of a groove in which the planarization layer is concave toward the substrate, and a third opening through which a part of the auxiliary electrode is exposed may be formed.

Details of the openings are the same as those of the above-described organic light emitting display device according to the present invention.

Also, as shown in FIG. 4E , in the step of heat-treating the second bank pattern to form a bank layer, an edge of the reflective electrode may be covered with the bank layer.

5 is a cross-sectional view schematically illustrating some processes in manufacturing an organic light emitting display device.

As shown in FIG. 5, it is preferable that an edge of the reflective electrode positioned between the planarization layer and the bank layer has a lateral length shorter than that of the silver planarization layer and the bank layer.

When heat is applied to the bank layer made of an organic insulating material, the bank material melts due to thermal fluid properties, so that an edge of the reflective electrode may be covered at a portion where a predetermined margin is left on the top of the planarization layer.

In this way, an organic light emitting display device having three types of openings can be manufactured by exposing the bank layer once through a halftone mask without using a photoresist layer and alternately processing etching and ashing.

Although the above has been described based on the embodiments of the present invention, various changes or modifications may be made at the level of those skilled in the art. Accordingly, it will be understood that such changes and modifications are included within the scope of the present invention as long as they do not depart from the scope of the present invention.

11: source electrode
12: drain electrode
13: gate electrode
14: gate insulating film
15: semiconductor layer
20: TFT
110: substrate
120: interlayer insulating film
130: passivation layer
140: planarization layer
150: reflective electrode
160: first auxiliary electrode, 161: second auxiliary electrode
170: bank layer
180: organic light emitting layer
190: common electrode
200: bulkhead
A: first opening
B: second opening
C: third opening

Claims (10)

a substrate on which a plurality of pixel areas are defined;
a thin film transistor and a first auxiliary electrode positioned on the substrate;
a planarization layer having first and second contact holes on the thin film transistor and the first auxiliary electrode, respectively, and a groove portion concave toward the substrate in a region between the thin film transistor and the first auxiliary electrode;
a reflective electrode provided on the planarization layer and in contact with the thin film transistor through a first contact hole; and
A bank layer provided on the planarization layer and having first openings, second openings, and third openings in first and second contact holes and grooves, respectively.
Organic light emitting display device.
According to claim 1,
Further comprising a second auxiliary electrode provided on the planarization layer and in contact with the first auxiliary electrode through a second contact hole.
Organic light emitting display device.
According to claim 1,
The planarization layer has a reverse taper shape from the substrate in the first and second contact holes,
Organic light emitting display device.
According to claim 1,
Further comprising an organic light emitting layer continuously provided on the bank layer, the first opening and the groove, and provided on the second contact hole.
Organic light emitting display device.
According to claim 4,
Further comprising a common electrode provided on the organic light emitting layer and electrically connected to the first auxiliary electrode through the second contact hole.
Organic light emitting display device.
forming a thin film transistor and a first auxiliary electrode on a substrate, and forming a planarization layer on top of the thin film transistor and exposing the first auxiliary electrode;
forming a reflective electrode on the thin film transistor, the first auxiliary electrode, and the planarization layer;
depositing a bank material on the reflective electrode and forming a first bank pattern;
etching the reflective electrode exposed by the first bank pattern to form a second auxiliary electrode;
forming a second bank pattern by ashing the first bank pattern;
Heat-treating the second bank pattern to form a bank layer;
Method for manufacturing an organic light emitting display device.
According to claim 6,
In the forming of the first bank pattern, a halftone mask is used.
Method for manufacturing an organic light emitting display device.
According to claim 6,
In the step of forming a second bank pattern by ashing the first bank pattern,
The planarization layer exposed by etching the reflective electrode is removed by a certain thickness.
Method for manufacturing an organic light emitting display device.
According to claim 6,
In the step of forming a second bank pattern by ashing the first bank pattern,
A first opening in which a portion of the reflective electrode is exposed, a second opening in which the planarization layer has a shape of a groove concave toward the substrate, and a third opening in which a portion of the second auxiliary electrode is exposed are formed.
Method for manufacturing an organic light emitting display device.
According to claim 6,
In the step of heat-treating the second bank pattern to form a bank layer,
An edge of the reflective electrode is covered with the bank layer.
Method for manufacturing an organic light emitting display device.

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