KR20170063288A - Organic Light Emitting Diode Display Device - Google Patents
Organic Light Emitting Diode Display Device Download PDFInfo
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- KR20170063288A KR20170063288A KR1020150169494A KR20150169494A KR20170063288A KR 20170063288 A KR20170063288 A KR 20170063288A KR 1020150169494 A KR1020150169494 A KR 1020150169494A KR 20150169494 A KR20150169494 A KR 20150169494A KR 20170063288 A KR20170063288 A KR 20170063288A
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- layer
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- light emitting
- bank
- emitting diode
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- H01L51/5203—
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- H01L27/3246—
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- H01L51/0003—
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- H01L51/56—
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- H01L2227/32—
Abstract
A bank having a first electrode including a first portion and a second portion over the substrate and a transmission hole covering the second portion and exposing the first portion; Wherein the first portion and the second portion have different thicknesses, and the bank has a single structure. The organic light emitting diode display according to claim 1, . Here, the light emitting layer is formed through a solution process.
Description
The present invention relates to an organic light emitting diode display, and more particularly to a large area and / or high resolution organic light emitting diode display.
2. Description of the Related Art Flat panel displays having excellent characteristics such as thinning, lightening, and low power consumption have been widely developed and applied to various fields.
Among the flat panel display devices, an organic light emitting diode (OLED) display device, also referred to as an organic electroluminescent display device or organic electroluminescent display device, An electron injecting charge is injected into the light emitting layer formed between the anode which is the injection electrode, and the electron and the hole are paired, and then the light is emitted while disappearing. Such an organic light emitting diode display device can be formed not only on a flexible substrate such as a plastic but also because it has a large contrast ratio and response time of several microseconds since it is a self- It is easy to manufacture and design a driving circuit because it is easy to operate, is not limited in viewing angle, is stable at a low temperature, and can be driven at a relatively low voltage of 5 V to 15 V DC.
The organic light emitting diode display device can be classified into a passive matrix type and an active matrix type according to a driving method. An active type organic light emitting diode display device capable of low power consumption, fixed size, and large size is widely used in various display devices. .
FIG. 1 is a diagram showing a structure of a general organic light emitting diode display device in a band diagram.
1, an organic light emitting diode display device includes a light
1, the lower line is the highest energy level of the valence band, the highest occupied molecular orbital (HOMO), the upper line is the lowest energy level of the conduction band, LUMO (lowest unoccupied molecular orbital). The energy difference between the HOMO level and the LUMO level is the band gap.
(+) Injected from the
The light
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a large-area and / or high-resolution organic light emitting diode display device by solving the problem of vacuum deposition using a mask.
According to an aspect of the present invention, there is provided a plasma display panel comprising a substrate, a first electrode including a first portion and a second portion on the substrate, and a first electrode covering the second portion, And a second electrode on the light emitting layer, wherein the first portion and the second portion have a different thickness than the organic light emitting diode display device And the bank has a single structure.
At this time, the thickness of the first portion may be made thicker than the thickness of the second portion, or the thickness of the second portion may be made thicker than the thickness of the first portion.
Further, the upper surface of the first portion can be formed into a U-shaped curve.
In the present invention, a light emitting layer of an organic light emitting diode display device is formed by a solution process, so that it can be applied to a display device having a large area and / or a high resolution.
At this time, by forming the banks having a single structure on the first electrode including the first portion and the second portion having different thicknesses, it is possible to reduce the manufacturing time and cost by reducing the number of processes compared with the banks having the dual structure.
In addition, it is possible to reduce the amount of the solution by controlling the depth of the transmission hole of the bank, thereby reducing the material cost and improving the efficiency and lifetime of the organic light emitting diode by forming a light emitting layer having a uniform thickness.
FIG. 1 is a diagram showing a structure of a general organic light emitting diode display device in a band diagram.
2 is a schematic circuit diagram of one pixel region of an organic light emitting diode display according to an embodiment of the present invention.
3 is a cross-sectional view schematically showing an organic light emitting diode display device according to a first embodiment of the present invention.
4A to 4E are cross-sectional views schematically showing a display device in each step of the manufacturing process of the organic light emitting diode display device according to the first embodiment of the present invention.
5 is a plan view schematically showing an effective light emitting region of an organic light emitting diode display according to a first embodiment of the present invention.
FIG. 6 is a cross-sectional view schematically showing an effective light emitting region of the organic light emitting diode display according to the first embodiment of the present invention, and corresponds to line VI-VI in FIG.
7 is a plan view schematically showing an organic light emitting diode display device according to a second embodiment of the present invention.
8A to 8E are cross-sectional views schematically showing a display device in each step of the manufacturing process of the organic light emitting diode display device according to the second embodiment of the present invention.
9 is a plan view schematically showing an organic light emitting diode display device according to a third embodiment of the present invention.
10A to 10E are cross-sectional views schematically showing a display device in each step of the manufacturing process of the organic light emitting diode display device according to the third embodiment of the present invention.
11 is a plan view schematically showing an organic light emitting diode display device according to a fourth embodiment of the present invention.
An organic light emitting diode display device of the present invention includes a substrate, a first electrode including a first portion and a second portion on the substrate, and a bank having a transmission hole covering the second portion and exposing the first portion, A light emitting layer disposed on the upper portion of the first portion in the transmission hole, and a second electrode on the light emitting layer, wherein the first portion and the second portion have different thicknesses.
The thickness of the first portion may be greater than the thickness of the second portion.
At this time, the bank contacts the first portion and may include a reverse photograph side.
Alternatively, the thickness of the first portion may be less than the thickness of the second portion.
The second portion may include a side surface that is tapered adjacent the first portion, and the bank may cover the inclined side surface.
Alternatively, the upper surface of the first portion may have a U-shape.
The bank may be made of an organic insulating material having hydrophobicity.
Hereinafter, an organic light emitting diode display according to an embodiment of the present invention will be described in detail with reference to the drawings.
2 is a schematic circuit diagram of one pixel region of an organic light emitting diode display according to an embodiment of the present invention.
2, the organic light emitting diode display device according to the embodiment of the present invention includes a gate line GL and a data line DL that define a pixel region P and intersect with each other, A switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and an organic light emitting diode De are formed in the region P.
More specifically, the gate electrode of the switching thin film transistor Ts is connected to the gate wiring GL and the source electrode thereof is connected to the data wiring DL. The gate electrode of the driving thin film transistor Td is connected to the drain electrode of the switching thin film transistor Ts, and the source electrode thereof is connected to the high potential voltage VDD. The anode of the organic light emitting diode De is connected to the drain electrode of the driving thin film transistor Td and the cathode is connected to the low potential voltage VSS. The storage capacitor Cst is connected to the gate electrode and the drain electrode of the driving thin film transistor Td.
The switching TFTs turn on according to the gate signal applied through the gate line GL and the data line DL is turned on at this time. Is applied to the gate electrode of the driving thin film transistor Td and the one electrode of the storage capacitor Cst through the switching thin film transistor Ts.
The driving thin film transistor Td is turned on according to the data signal to control the current flowing through the organic light emitting diode De to display an image. The organic light emitting diode De emits light by a current of a high potential voltage (VDD) transmitted through the driving thin film transistor Td.
That is, the amount of current flowing through the organic light emitting diode De is proportional to the size of the data signal, and the intensity of light emitted by the organic light emitting diode De is proportional to the amount of current flowing through the organic light emitting diode De, The region P displays different gradations according to the size of the data signal, and as a result, the organic light emitting diode display displays an image.
The storage capacitor Cst maintains the charge corresponding to the data signal for one frame so that the amount of current flowing through the organic light emitting diode De is kept constant and the gradation displayed by the organic light emitting diode De is maintained constant .
Here, a structure in which two thin film transistors Ts and Td and one capacitor Cst are formed in one pixel region P has been described, but the number of thin film transistors and the number of capacitors are not limited thereto.
First Embodiment
FIG. 3 is a cross-sectional view schematically showing an organic light emitting diode display device according to a first embodiment of the present invention, and shows a structure corresponding to a plurality of pixel regions.
As shown in FIG. 3, a
A
A
In the first embodiment of the present invention, the
An interlayer insulating
The
Source and
The source and drain
On the other hand, the
Alternatively, the thin film transistor may have an inverted staggered structure in which a gate electrode is positioned below the semiconductor layer and source and drain electrodes are located above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon.
Here, the thin film transistor corresponds to a driving thin film transistor of an organic light emitting diode display, and a switching thin film transistor (not shown) having the same structure as the driving thin film transistor is further formed on the
A
The
A
A
The
Alternatively, the
A
Although not shown, the
Here, the hole-assist layer and the light-emitting material layer are formed only in the
The luminescent material layer of each pixel region may be one of red, green and blue luminescent material layers, and one color corresponds to one pixel region.
A
The
Here, the organic light emitting diode display according to the first embodiment of the present invention may be a top emission type in which light emitted from the
Alternatively, the organic light emitting diode display according to the first embodiment of the present invention may be a bottom emission type in which light emitted from the
A method of manufacturing the organic light emitting diode display according to the first embodiment of the present invention will be described with reference to the drawings.
4A to 4E are cross-sectional views schematically showing a display device in each step of the manufacturing process of the organic light emitting diode display device according to the first embodiment of the present invention.
4A, a semiconductor material is deposited on the insulating
Here, the insulating
Alternatively, the
Next, a
Next, a conductive material such as a metal is deposited on the
The
On the other hand, a first capacitor electrode (not shown) and a gate wiring (not shown) are formed together with the
An interlayer insulating
The
Next, a conductive material such as metal is deposited on the
The source and drain
On the other hand, a data line (not shown), a second capacitor electrode (not shown), and a power line (not shown) are formed together with the source and drain
Next, a
The
Next, as shown in FIG. 4B, a conductive material having a relatively high work function is deposited on the
The
Next, a first bank material is deposited or applied on the
Next, as shown in FIG. 4C, by injecting a light emitting material solution using an injection device (not shown) including a plurality of nozzles, a solution (solution) is formed on the exposed
At this time, since the
Next, as shown in FIG. 4D, the solution layer (180a in FIG. 4C) is dried to form the
Next, as shown in FIG. 4E, a
As described above, in the organic light emitting diode display device according to the first embodiment of the present invention, a display device having a large area and / or a high resolution can be realized by forming the
In the organic light emitting diode display device according to the first embodiment of the present invention, the
This will be described with reference to FIGS. 5 and 6. FIG.
FIG. 5 is a plan view schematically showing an effective light emitting region of the organic light emitting diode display according to the first embodiment of the present invention. FIG. 6 is a plan view of the effective light emitting region of the organic light emitting diode display according to the first embodiment of the present invention. Sectional view taken along the line VI-VI in Fig.
5 and 6, in the organic light emitting diode display according to the first embodiment of the present invention, the
At this time, the
Therefore, in the first embodiment of the present invention, the thickness of the
However, in the first embodiment of the present invention, a process is added to form the
Second Embodiment
FIG. 7 is a plan view schematically illustrating an organic light emitting diode display device according to a second embodiment of the present invention, and shows the structure of an organic light emitting diode. The organic light emitting diode display device according to the second embodiment of the present invention has the same structure as that of the first embodiment except for the organic light emitting diode, and a description of the same parts will be omitted.
7, in the organic light emitting diode display device according to the second embodiment of the present invention, a switching thin film transistor (not shown), a driving thin film transistor (not shown), a storage (Not shown), a gate wiring (not shown), a data wiring (not shown), and a power wiring (not shown) are formed, and a protective film (not shown) having a flat upper surface is formed do. Here, the switching thin film transistor (not shown) and the driving thin film transistor (not shown) may have the same structure as that shown in FIG.
A
Here, the
On the
The
Here, the distance between the upper surface of the
The
Although not shown, the
Here, the hole-assist layer and the light-emitting material layer are formed only in the
The luminescent material layer of each pixel region may be one of red, green and blue luminescent material layers, and one color corresponds to one pixel region.
A
The
8A to 8E are cross-sectional views schematically showing a display device in each step of the manufacturing process of the organic light emitting diode display device according to the second embodiment of the present invention.
A first electrode material layer (not shown) is formed on the entire surface of the
The
For example, the first electrode material layer may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).
4A, a switching thin film transistor (not shown), a driving thin film transistor (not shown), a storage capacitor (not shown), and a thin film transistor (not shown) are formed between the
Next, as shown in FIG. 8B, a bank material layer is formed on the entire surface of the
At this time, the
The bank material layer may comprise an organic insulating material having hydrophobic properties. Alternatively, the bank material layer may be made of an organic insulating material having a hydrophilic property, and the surface of the
Next, as shown in FIG. 8C, a light emitting material solution is dropped using an injection device (not shown) including a plurality of nozzles to form a
Here, since the depth of the penetrating
Next, as shown in FIG. 8D, the solution layer (280a in FIG. 8C) is dried to form the
At this time, since the depth of the
Next, as shown in FIG. 8E, a
Since the organic light emitting diode display device according to the second embodiment of the present invention includes the
It is also contemplated that the
Third Embodiment
9 is a plan view schematically illustrating an organic light emitting diode display device according to a third embodiment of the present invention, and shows the structure of an organic light emitting diode. The organic light emitting diode display device according to the third embodiment of the present invention has the same structure as that of the first embodiment except for the organic light emitting diode, and a description of the same parts will be omitted.
9, in the organic light emitting diode display according to the third embodiment of the present invention, a switching thin film transistor (not shown), a driving thin film transistor (not shown), a storage (Not shown), a gate wiring (not shown), a data wiring (not shown), and a power wiring (not shown) are formed, and a protective film (not shown) having a flat upper surface is formed do. Here, the switching thin film transistor (not shown) and the driving thin film transistor (not shown) may have the same structure as that shown in FIG.
A
Here, the
On the
The
Here, the
A
Although not shown, the
Here, the hole-assist layer and the light-emitting material layer are formed only in the transmission hole 370a, and the electron-assist layer may be formed substantially on the entire surface of the
The luminescent material layer of each pixel region may be one of red, green and blue luminescent material layers, and one color corresponds to one pixel region.
A
The
10A to 10E are cross-sectional views schematically showing a display device in each step of the manufacturing process of the organic light emitting diode display device according to the third embodiment of the present invention.
A first electrode material layer (not shown) is formed on the entire surface of the
The
For example, the first electrode material layer may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).
4A, a switching thin film transistor (not shown), a driving thin film transistor (not shown), a storage capacitor (not shown), and a second thin film transistor (not shown) are formed between the
Next, as shown in FIG. 10B, a bank material layer is formed on the entire surface of the
At this time, the
The bank material layer may comprise an organic insulating material having hydrophobic properties. Alternatively, the bank material layer may be made of an organic insulating material having a hydrophilic property, and the surface of the
Next, as shown in FIG. 10C, a light emitting material solution is dropped using an injection device (not shown) including a plurality of nozzles to form a
Next, as shown in FIG. 10D, the solution layer (380a in FIG. 10C) is dried to form the
Here, a large number of peaks may be formed on the upper surface of the
Next, as shown in FIG. 10E, a
In the organic light emitting diode display device according to the third embodiment of the present invention, the
At this time the
In addition, even if a large number of peaks are formed on the upper surface of the
Fourth Embodiment
11 is a plan view schematically showing an organic light emitting diode display device according to a fourth embodiment of the present invention, and shows the structure of an organic light emitting diode. The organic light emitting diode display device according to the fourth embodiment of the present invention has the same structure as that of the first embodiment except for the organic light emitting diode, and illustration of the same parts will be omitted.
11, in the organic light emitting diode display device according to the fourth embodiment of the present invention, a switching thin film transistor (not shown), a driving thin film transistor (not shown), a storage (Not shown), a gate wiring (not shown), a data wiring (not shown), and a power wiring (not shown) are formed, and a protective film (not shown) having a flat upper surface is formed do. Here, the switching thin film transistor (not shown) and the driving thin film transistor (not shown) may have the same structure as that shown in FIG.
A
Here, the
On the
The
Here, the
On the other hand, the thickness of the
An
In this case, the top surface of the
Although not shown, the
Here, the hole-assist layer and the light-emitting material layer are formed only in the transmission hole 470a, and the electron-assist layer may be formed substantially on the entire surface of the
The luminescent material layer of each pixel region may be one of red, green and blue luminescent material layers, and one color corresponds to one pixel region.
A
The
The organic light emitting diode display device according to the fourth embodiment of the present invention can be formed by the same method as the method of manufacturing the organic light emitting diode display device according to the third embodiment shown in FIGS. 10A to 10E.
Since the organic light emitting diode display device according to the fourth embodiment of the present invention includes the
Further, when the solution layer (380a in Fig. 10C) formed on the first portion (362a in Fig. 10C) of the flat first electrode (362 in Fig. 10C) is dried, as in the third embodiment, a pile-up phenomenon occurs in which the thickness of the light emitting layer (380 in FIG. 10D) becomes thicker from the center to the edge due to the coffee stain effect or the coffee ring effect. In the embodiment, the top surface of the
In addition, since the thickness of the
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the appended claims. And changes may be made without departing from the spirit and scope of the invention.
110: substrate 122: semiconductor layer
130: gate insulating film 132: gate electrode
140:
152: source electrode 154: drain electrode
160:
162: first electrode 170: bank
172: first bank 174: second bank
170a: Through hole 180: Light emitting layer
192: second electrode
Claims (7)
A first electrode comprising a first portion and a second portion on the substrate;
A bank having a transmission hole covering the second portion and exposing the first portion;
A light emitting layer located above the first portion in the transmission hole;
The second electrode
/ RTI >
Wherein the first portion and the second portion have different thicknesses.
Wherein the thickness of the first portion is thicker than the thickness of the second portion.
Wherein the bank contacts the first portion and comprises a reverse photographic side.
And the thickness of the first portion is thinner than the thickness of the second portion.
Wherein the second portion includes a side surface that is sloped adjacent to the first portion, and wherein the bank covers the inclined side surface.
And the upper surface of the first portion has a U-shape.
Wherein the bank is made of an organic insulating material having hydrophobicity.
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KR20190063573A (en) * | 2017-11-30 | 2019-06-10 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
US11322563B2 (en) | 2018-02-08 | 2022-05-03 | Dongwoo Fine-Chem Co., Ltd. | Electroluminescent device with improved luminous efficiency and viewing angle and method of manufacturing the same |
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CN109273500A (en) * | 2018-09-21 | 2019-01-25 | 京东方科技集团股份有限公司 | A kind of oled display substrate, display device and production method |
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JP5293322B2 (en) * | 2009-03-24 | 2013-09-18 | 凸版印刷株式会社 | Organic EL panel and manufacturing method thereof |
JP2011009017A (en) * | 2009-06-24 | 2011-01-13 | Panasonic Corp | Organic el display panel |
JP2012123987A (en) * | 2010-12-07 | 2012-06-28 | Hitachi Displays Ltd | Organic el display device and method for manufacturing the same |
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KR20190063573A (en) * | 2017-11-30 | 2019-06-10 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
US11322563B2 (en) | 2018-02-08 | 2022-05-03 | Dongwoo Fine-Chem Co., Ltd. | Electroluminescent device with improved luminous efficiency and viewing angle and method of manufacturing the same |
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