KR102477026B1 - 재사용 가능한 서브구조물에 기초한 나노와이어 반도체 구조물의 측정 모델 - Google Patents

재사용 가능한 서브구조물에 기초한 나노와이어 반도체 구조물의 측정 모델 Download PDF

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KR102477026B1
KR102477026B1 KR1020207029592A KR20207029592A KR102477026B1 KR 102477026 B1 KR102477026 B1 KR 102477026B1 KR 1020207029592 A KR1020207029592 A KR 1020207029592A KR 20207029592 A KR20207029592 A KR 20207029592A KR 102477026 B1 KR102477026 B1 KR 102477026B1
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nanowire
model
measurement
based semiconductor
semiconductor structure
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KR20200122404A (ko
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호우쌈 초우아입
알렉산더 쿠즈네초프
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H01L21/67242—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • G06F30/17—Mechanical parametric or variational design
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H01L22/14—
    • H01L22/26—
    • H01L22/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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  • Nanotechnology (AREA)
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  • Mathematical Optimization (AREA)
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  • Computational Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Sampling And Sample Adjustment (AREA)
KR1020207029592A 2018-03-15 2019-03-14 재사용 가능한 서브구조물에 기초한 나노와이어 반도체 구조물의 측정 모델 Active KR102477026B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862643322P 2018-03-15 2018-03-15
US62/643,322 2018-03-15
US16/352,776 US11036898B2 (en) 2018-03-15 2019-03-13 Measurement models of nanowire semiconductor structures based on re-useable sub-structures
US16/352,776 2019-03-13
PCT/US2019/022370 WO2019178424A1 (en) 2018-03-15 2019-03-14 Measurement models of nanowire semiconductor structures based on re-usable sub-structures

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KR20200122404A KR20200122404A (ko) 2020-10-27
KR102477026B1 true KR102477026B1 (ko) 2022-12-12

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US (1) US11036898B2 (https=)
JP (1) JP7161543B2 (https=)
KR (1) KR102477026B1 (https=)
CN (1) CN111837230B (https=)
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WO (1) WO2019178424A1 (https=)

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CN113175992B (zh) * 2021-04-25 2023-01-06 南京大学 一种纳米锥光谱分析器件及光谱分析方法
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US12493004B2 (en) 2022-09-28 2025-12-09 Industrial Technology Research Institute Method for determining parameters of three dimensional nanostructure and apparatus applying the same
US12587274B2 (en) 2023-03-28 2026-03-24 Quantum Generative Materials Llc Satellite optimization management system based on natural language input and artificial intelligence
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US12372882B2 (en) 2023-06-30 2025-07-29 Kla Corporation Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures
US20250053096A1 (en) * 2023-08-07 2025-02-13 Kla Corporation Flexible Measurement Models For Model Based Measurements Of Semiconductor Structures
US12368503B2 (en) 2023-12-27 2025-07-22 Quantum Generative Materials Llc Intent-based satellite transmit management based on preexisting historical location and machine learning
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JP7161543B2 (ja) 2022-10-26
US20190286787A1 (en) 2019-09-19
CN111837230A (zh) 2020-10-27
WO2019178424A1 (en) 2019-09-19
KR20200122404A (ko) 2020-10-27
TWI781300B (zh) 2022-10-21
TW201946175A (zh) 2019-12-01
CN111837230B (zh) 2022-06-14
JP2021518656A (ja) 2021-08-02
US11036898B2 (en) 2021-06-15

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