CN111837230B - 基于可重复使用子结构的纳米线半导体结构的测量模型 - Google Patents

基于可重复使用子结构的纳米线半导体结构的测量模型 Download PDF

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CN111837230B
CN111837230B CN201980018185.XA CN201980018185A CN111837230B CN 111837230 B CN111837230 B CN 111837230B CN 201980018185 A CN201980018185 A CN 201980018185A CN 111837230 B CN111837230 B CN 111837230B
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model
nanowire
measurement
reusable
based semiconductor
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CN111837230A (zh
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H·舒艾卜
A·库兹涅佐夫
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/10—Geometric CAD
    • G06F30/17—Mechanical parametric or variational design
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/309—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of printed or hybrid circuits or circuit substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
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  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
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  • Mathematical Optimization (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201980018185.XA 2018-03-15 2019-03-14 基于可重复使用子结构的纳米线半导体结构的测量模型 Active CN111837230B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862643322P 2018-03-15 2018-03-15
US62/643,322 2018-03-15
US16/352,776 US11036898B2 (en) 2018-03-15 2019-03-13 Measurement models of nanowire semiconductor structures based on re-useable sub-structures
US16/352,776 2019-03-13
PCT/US2019/022370 WO2019178424A1 (en) 2018-03-15 2019-03-14 Measurement models of nanowire semiconductor structures based on re-usable sub-structures

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CN111837230A CN111837230A (zh) 2020-10-27
CN111837230B true CN111837230B (zh) 2022-06-14

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US (1) US11036898B2 (https=)
JP (1) JP7161543B2 (https=)
KR (1) KR102477026B1 (https=)
CN (1) CN111837230B (https=)
TW (1) TWI781300B (https=)
WO (1) WO2019178424A1 (https=)

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US11644412B2 (en) * 2020-08-02 2023-05-09 Aizhong Zhang Thin film spectroellipsometric imaging
CN113175992B (zh) * 2021-04-25 2023-01-06 南京大学 一种纳米锥光谱分析器件及光谱分析方法
US12567165B2 (en) * 2022-02-02 2026-03-03 Fei Company Critical dimension measurement in 3D with geometric models
TWI814579B (zh) 2022-09-13 2023-09-01 財團法人工業技術研究院 用以量測平整基板上之三維奈米結構的x射線反射儀設備及方法
US12493004B2 (en) 2022-09-28 2025-12-09 Industrial Technology Research Institute Method for determining parameters of three dimensional nanostructure and apparatus applying the same
US12587274B2 (en) 2023-03-28 2026-03-24 Quantum Generative Materials Llc Satellite optimization management system based on natural language input and artificial intelligence
US12379672B2 (en) 2023-05-11 2025-08-05 Kla Corporation Metrology of nanosheet surface roughness and profile
US12380367B2 (en) 2023-06-30 2025-08-05 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling
US12510590B2 (en) 2023-06-30 2025-12-30 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing an effective medium model with physical modeling
US12372882B2 (en) 2023-06-30 2025-07-29 Kla Corporation Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures
US20250053096A1 (en) * 2023-08-07 2025-02-13 Kla Corporation Flexible Measurement Models For Model Based Measurements Of Semiconductor Structures
US12368503B2 (en) 2023-12-27 2025-07-22 Quantum Generative Materials Llc Intent-based satellite transmit management based on preexisting historical location and machine learning
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JP7161543B2 (ja) 2022-10-26
US20190286787A1 (en) 2019-09-19
CN111837230A (zh) 2020-10-27
WO2019178424A1 (en) 2019-09-19
KR102477026B1 (ko) 2022-12-12
KR20200122404A (ko) 2020-10-27
TWI781300B (zh) 2022-10-21
TW201946175A (zh) 2019-12-01
JP2021518656A (ja) 2021-08-02
US11036898B2 (en) 2021-06-15

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