KR102462530B1 - Organic Light-Emitting Display device having a signal line on a non-emitting area - Google Patents

Abstract

The present invention relates to an organic light emitting diode display in which a signal line is positioned on a non-emission area. In the organic light emitting diode display according to the inventive concept, light emitted from a light emitting structure toward an adjacent pixel area by a signal line may be reflected to the corresponding pixel area. Accordingly, in the organic light emitting diode display according to the technical idea of the present invention, light leakage may be prevented and light extraction efficiency may be improved.

Description

BACKGROUND ART An organic light-emitting display device having a signal line on a non-emitting area

The present invention relates to an organic light emitting display device in which a signal line is positioned on a non-emission area located outside the light emitting area.

BACKGROUND ART In general, electronic devices such as monitors, TVs, laptops, and digital cameras include display devices for implementing images. For example, the display device may include a liquid crystal display device and/or an organic light emitting display device.

The organic light emitting diode display may include a plurality of pixel areas. Each pixel area may include a light emitting area and a driving area. A light emitting structure may be positioned on each light emitting area. For example, the light emitting structure may include a lower electrode, a light emitting layer, and an upper electrode that are sequentially stacked. A driving circuit for controlling a corresponding light emitting structure may be positioned on each driving region.

In the organic light emitting display device, light generated by the light emitting structure may be emitted to the outside through the light emitting structure and a lower substrate supporting the driving circuit. For example, the organic light emitting display device may be a bottom emission type in which an image is realized on an outer surface of the lower substrate. In the organic light emitting diode display, an upper substrate positioned on the light emitting structure and/or the upper electrode of the light emitting structure may include a material having high reflectance.

The organic light emitting diode display may include signal lines for transmitting signals to a driving circuit located in each pixel area. The signal lines may be positioned between the pixel areas. The signal wirings may include the same material as one of the conductive layers constituting the driving circuit. For example, the signal wires may be located closer to the lower substrate than the lower electrode of the light emitting structure.

In the organic light emitting diode display, a portion of light traveling from the light emitting structure toward the lower substrate may be reflected by the signal lines. The light reflected by the signal lines may be reflected back toward the lower substrate by the upper electrode or the upper substrate. The light reflected back by the upper electrode or the upper substrate may be emitted to the outside through a space between adjacent signal lines and/or an adjacent pixel area. That is, in the organic light emitting diode display, light leakage is generated by the signal wires, the upper electrode, and the upper substrate to an unintended area, and thus the quality of an image may be deteriorated.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting diode display capable of preventing light leakage due to signal wiring.

Another object of the present invention is to provide an organic light emitting diode display capable of preventing light reflected by a signal line from being emitted to the outside through an unintended area.

The problems to be solved by the present invention are not limited to the aforementioned problems. Problems not mentioned herein will be clearly understood by those skilled in the art from the following description.

An organic light emitting diode display according to the technical idea of the present invention for achieving the above object includes a lower substrate. The lower substrate includes a light-emitting area and a non-emission area located outside the light-emitting area. A light emitting structure is positioned on the light emitting area of the lower substrate. The light emitting structure includes a lower electrode, a light emitting layer, and an upper electrode that are sequentially stacked. A protrusion pattern is positioned on the non-emission area of the lower substrate. The protrusion pattern includes a first side facing the light emitting area and a second side facing the first side. A signal line is positioned on the first side of the protrusion pattern. The first side and the second side of the protrusion pattern have a positive taper.

The protrusion pattern may include an insulating material.

A color filter may be positioned between the lower substrate and the light emitting structure. The color filter may extend over the protruding pattern and signal wiring.

The signal line may include a side surface positioned on an upper surface of the protrusion pattern facing the lower substrate.

An edge of the lower electrode may be covered by a bank insulating layer. The bank insulating layer may include a side surface positioned on the non-emission area of the lower substrate.

The protrusion pattern may overlap the bank insulating layer.

A side surface of the bank insulating layer may have a positive taper.

The upper electrode may extend on a side surface of the bank insulating layer.

An organic light emitting diode display according to an exemplary embodiment of the present invention includes a first signal line. The first signal line is located on the first non-emission area of the lower substrate. The first signal wiring includes an inclined region of a positive taper. A second signal line is positioned on the second non-emission area of the lower substrate spaced apart from the first non-emission area. The second signal line includes an inclined region of a positive taper. A light emitting structure is positioned on the light emitting area of the lower substrate positioned between the first non-emissive area and the second non-emissive area. The sloped area of the first signal line and the sloped area of the second signal line include an upper surface facing the light emitting area of the lower substrate.

The second signal line may include the same material as the first signal line.

A horizontal width of the second signal line may be different from a horizontal width of the first signal line.

A first protrusion pattern may be positioned on the first non-emission area of the lower substrate. The first protrusion pattern may include a side surface facing the inclined region of the first signal line. A second protrusion pattern may be positioned on the second non-emission area of the lower substrate. The second protrusion pattern may include a side surface facing the inclined region of the second signal line. A horizontal width of the second protrusion pattern may be different from a horizontal width of the first protrusion pattern.

The length of the inclined region of the second signal line may be the same as the length of the inclined region of the first signal line.

In the organic light emitting diode display according to the inventive concept, light reflected by the signal line may be emitted to the outside through a pixel area electrically connected to the signal line. Accordingly, in the organic light emitting diode display according to the technical idea of the present invention, light leakage due to signal wiring may be prevented. In addition, in the organic light emitting diode display according to the inventive concept, light extraction efficiency may be improved. Accordingly, in the organic light emitting diode display according to the technical idea of the present invention, the quality of an image implemented may be improved.

1 is a diagram schematically illustrating an organic light emitting display device according to an embodiment of the present invention.
FIG. 2A is a view showing a cross-section taken along line I-I' of FIG. 1 .
FIG. 2B is a view showing a cross-section taken along line II-II' of FIG. 1 .
FIG. 3 is an enlarged view of region P of FIG. 2A .
4 and 5 are views illustrating an organic light emitting diode display according to another exemplary embodiment of the present invention.

Details regarding the above object and technical configuration of the present invention and the effects thereof will be more clearly understood by the following detailed description with reference to the drawings showing embodiments of the present invention. Here, since the embodiments of the present invention are provided so that the technical idea of the present invention can be sufficiently conveyed to those skilled in the art, the present invention may be embodied in other forms so as not to be limited to the embodiments described below.

In addition, parts indicated by the same reference numerals throughout the specification mean the same components, and in the drawings, the length and thickness of a layer or region may be exaggerated for convenience. In addition, when it is described that a first component is "on" a second component, the first component is not only located above the first component in direct contact with the second component, but also the first component and the A case in which a third component is positioned between the second component is also included.

Here, terms such as the first, second, etc. are used to describe various components, and are used for the purpose of distinguishing one component from other components. However, within the scope not departing from the spirit of the present invention, the first component and the second component may be arbitrarily named according to the convenience of those skilled in the art.

Terms used in the specification of the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. For example, elements expressed in the singular include plural elements unless the context clearly means only the singular. In addition, in the specification of the present invention, terms such as "comprises" or "have" are intended to designate the existence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, one or It should be understood that it does not preclude the possibility of addition or existence of other features or numbers, steps, operations, components, parts, or combinations thereof.

In addition, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with the meanings in the context of the related art, and, unless explicitly defined in the specification of the present invention, have ideal or excessively formal meanings. not interpreted

(Example)

1 is a diagram schematically illustrating an organic light emitting display device according to an embodiment of the present invention. FIG. 2A is a view showing a cross-section taken along line I-I' of FIG. 1 . FIG. 2B is a view showing a cross-section taken along line II-II' of FIG. 1 . FIG. 3 is an enlarged view of region P of FIG. 2A .

1, 2A, 2B, and 3 , the organic light emitting diode display according to an exemplary embodiment may include a lower substrate 110 . The lower substrate 110 may include an insulating material. The lower substrate 110 may include a transparent material. For example, the lower substrate 110 may include glass or plastic.

The lower substrate 110 may include pixel areas R-PA, W-PA, B-PA, and G-PA. Each of the pixel areas R-PA, W-PA, B-PA, and G-PA may implement a different color from the adjacent pixel areas R-PA, W-PA, B-PA, and G-PA. For example, the lower substrate 110 may include a red pixel area R-PA embodying red, a white pixel area W-PA embodying white, a blue pixel area B-PA embodying blue, and It may include a green pixel area G-PA that implements green.

Signal lines GL, DL1-DL4, RL, PL1, and PL2 may be positioned on the lower substrate 110 . For example, the signal lines GL, DL1-DL4, RL, PL1, and PL2 may include a gate line GL, data lines DL1-DL4, and a power supply voltage supply line PL1. The gate line GL may extend in one direction. The data lines DL1 to DL4 may cross the gate line GL. The power supply voltage supply line PL1 may be parallel to the data lines DL1-DL4.

The signal lines GL, DL1-DL4, RL, PL1, and PL2 may be positioned between the pixel areas R-PA, W-PA, B-PA, and G-PA. For example, the lower substrate 110 may include a non-emission area NEA positioned between the pixel areas R-PA, W-PA, B-PA, and G-PA. The signal lines GL, DL1-DL4, RL, PL1, and PL2 may be positioned on the non-emission area NEA of the lower substrate 110 . Each of the pixel areas R-PA, W-PA, B-PA, and G-PA may be defined by the signal lines GL, DL1-DL4, RL, PL1, and PL2. For example, the signal lines GL, DL1-DL4, RL, PL1, and PL2 may surround the pixel areas R-PA, W-PA, B-PA, and G-PA.

Each of the pixel areas R-PA, W-PA, B-PA, and G-PA may include an emission area EA and a driving area DA. The light emitting area EA and the driving area DA may be positioned side by side along one of the signal lines GL, DL1-DL4, RL, PL1, and PL2. For example, each of the pixel areas R-PA, W-PA, B-PA, and G-PA may include the light emitting area EA and the driving area DA which are positioned side by side along the data lines DL1 to DL4. ) may be included.

A driving circuit may be positioned in the driving area DA of each of the pixel areas R-PA, W-PA, B-PA, and G-PA. For example, the driving circuit may include a first thin film transistor Tr1 , a second thin film transistor Tr2 , and a storage capacitor Cst.

The second thin film transistor Tr2 may have the same structure as the first thin film transistor Tr1 . For example, each of the first thin film transistor Tr1 and the second thin film transistor Tr2 includes a semiconductor pattern 210 , a gate insulating layer 220 , a gate electrode 230 , an interlayer insulating layer 240 , and a source electrode ( 250 ) and a drain electrode 260 .

The semiconductor pattern 210 may be located close to the lower substrate 110 . The semiconductor pattern 210 may include a semiconductor material. For example, the semiconductor pattern 210 may include amorphous silicon or polycrystalline silicon. The semiconductor pattern 210 may be an oxide semiconductor. For example, the semiconductor pattern 210 may include IGZO.

The semiconductor pattern 210 may include a source region, a drain region, and a channel region. The channel region may be positioned between the source region and the drain region. The conductivity of the channel region may be lower than the conductivity of the source region and the conductivity of the drain region. For example, the source region and the drain region may include conductive impurities.

The gate insulating layer 220 may be positioned on the semiconductor pattern 210 . The gate insulating layer 220 may partially cover an upper surface of the semiconductor pattern 210 facing the upper substrate 120 . For example, the gate insulating layer 220 may overlap the channel region of the semiconductor pattern 210 .

The gate insulating layer 220 may include an insulating material. For example, the gate insulating layer 220 may include silicon oxide and/or silicon nitride. The gate insulating layer 220 may include a high-K material. For example, the gate insulating layer 220 may include hafnium oxide (HfO) or titanium oxide (TiO). The gate insulating layer 220 may have a multilayer structure.

The gate electrode 230 may be positioned on the gate insulating layer 220 . The gate electrode 230 may be insulated from the semiconductor pattern 210 by the gate insulating layer 220 . For example, the gate electrode 230 may overlap the channel region of the semiconductor pattern 210 . A side surface of the gate electrode 230 may be continuous with a side surface of the gate insulating layer 220 .

The gate electrode 230 may include a conductive material. For example, the gate electrode 230 may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W).

The interlayer insulating layer 240 may be disposed on the semiconductor pattern 210 and the gate electrode 230 . The interlayer insulating layer 240 may extend outside the semiconductor pattern 210 . For example, the interlayer insulating layer 240 of the second thin film transistor Tr2 may be connected to the interlayer insulating layer 240 of the first thin film transistor Tr1 .

The interlayer insulating layer 240 may include an insulating material. For example, the interlayer insulating layer 240 may include silicon oxide or silicon nitride.

The source electrode 250 and the drain electrode 260 may be positioned on the interlayer insulating layer 240 . The source electrode 250 may be electrically connected to the source region of the semiconductor pattern 210 . The drain electrode 260 may be electrically connected to the drain region of the semiconductor pattern 210 . The drain electrode 260 may be spaced apart from the source electrode 250 . For example, the insulating interlayer 240 may include a contact hole exposing the source region of the semiconductor pattern 210 and a contact hole exposing the drain region of the semiconductor pattern 210 .

The source electrode 250 and the drain electrode 260 may include a conductive material. For example, the source electrode 250 and the drain electrode 260 may include metals such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). may include. The drain electrode 260 may include the same material as the source electrode 250 . The gate electrode 230 may include a material different from that of the source electrode 250 and the drain electrode 260 .

The first thin film transistor Tr1 may be controlled according to a gate signal applied through the gate line GL. For example, a gate electrode of the first thin film transistor Tr1 may be electrically connected to the gate line GL. The gate electrode 230 of the second thin film transistor Tr2 may be electrically connected to the first thin film transistor Tr1 . For example, the first thin film transistor Tr1 may transmit a data signal applied through the data line DL to the gate electrode 230 of the second thin film transistor Tr2 according to the gate signal. . The second thin film transistor Tr2 may generate a driving current according to the data signal. The storage capacitor Cst may maintain the operation of the second thin film transistor Tr2 for one frame.

The signal lines GL, DL1-DL4, RL, PL1, and PL2 may further include a reset voltage supply line PL2 and a reset line RL positioned on the lower substrate 110 . The reset voltage supply line PL2 may be parallel to the power supply voltage supply line PL1 . The reset line RL may be parallel to the gate line GL. The driving circuit of each of the pixel areas R-PA, W-PA, B-PA, and G-PA may further include a third thin film transistor Tr3. The third thin film transistor Tr3 may be controlled by a reset signal applied through the reset line RL. The structure of the third thin film transistor Tr3 may be the same as that of the second thin film transistor Tr2 . For example, the third thin film transistor Tr3 may include a gate electrode electrically connected to the reset line RL. The third thin film transistor Tr3 may electrically connect the storage capacitor Cst to the reset voltage supply line PL2 according to the reset signal. The storage capacitor Cst may be initialized by the reset signal.

An upper substrate 120 may be positioned on the driving circuits of the pixel areas R-PA, W-PA, B-PA, and G-PA. The upper substrate 120 may overlap the pixel areas R-PA, W-PA, B-PA, and G-PA of the lower substrate 110 . For example, the signal lines GL, DL1-DL4, RL, PL1, and PL2 may be positioned on the upper surface of the lower substrate 110 facing the upper substrate 120 .

The upper substrate 120 may include a material different from that of the lower substrate 110 . The upper substrate 120 may include a material having a hardness greater than or equal to a certain level. The upper substrate 120 may include a material having a high reflectivity. For example, the upper substrate 120 may include a metal such as aluminum (Al).

A buffer layer 130 may be positioned between the lower substrate 110 and the driving circuits. For example, the buffer layer 130 may be positioned between the lower substrate 110 and the first thin film transistor Tr1 and between the lower substrate 110 and the second thin film transistor Tr2 . The buffer layer 130 may extend outside the driving circuits. For example, the entire upper surface of the lower substrate 110 may be covered by the buffer layer 130 .

The buffer layer 130 may include an insulating material. For example, the buffer layer 130 may include silicon oxide.

A lower passivation layer 140 may be positioned between the driving circuits and the upper substrate 120 . The lower protective layer 140 may protect the driving circuits from external impact and moisture. For example, the lower passivation layer 140 may extend along the surfaces of the driving circuits facing the upper substrate 120 . The lower passivation layer 140 may extend outside the driving circuits. The first thin film transistor Tr1 , the second thin film transistor Tr2 , and the capacitor Cst may be covered by the lower passivation layer 140 .

The lower passivation layer 140 may include an insulating material. For example, the lower passivation layer 140 may include silicon oxide and/or silicon nitride. The lower passivation layer 140 may have a multilayer structure.

An overcoat layer 150 may be positioned between the lower passivation layer 140 and the upper substrate 120 . The overcoat layer 150 may remove a step difference caused by the driving circuits. For example, the upper surface of the lower passivation layer 140 facing the upper substrate 120 may directly contact the overcoat layer 150 . The upper surface of the overcoat layer 150 facing the upper substrate 120 may be a flat plane.

The overcoat layer 150 may include an insulating material. The overcoat layer 150 may include a material different from that of the lower passivation layer 140 . For example, the overcoat layer 150 may include an organic insulating material.

Light emitting structures 300R, 300W, 300B, and 300G may be positioned between the overcoat layer 150 and the upper substrate 120 . Each of the light emitting structures 300R, 300W, 300B, and 300G may generate light that implements a specific color. For example, each of the light emitting structures 300R, 300W, 300B, and 300G includes the lower electrodes 310R, 310W, 310B, and 310G, the light emitting layers 320R, 320W, and 320B that are sequentially stacked on the overcoat layer 150 . , 320G) and upper electrodes 330R, 330W, 330B, and 330G.

The lower electrodes 310R, 310W, 310B, and 310G may include a conductive material. The lower electrodes 310R, 310W, 310B, and 310G may be transparent electrodes. For example, the lower electrodes 310R, 310W, 310B, and 310G may include ITO or IZO.

The light-emitting layers 320R, 320W, 320B, and 320G include the lower electrodes 310R, 310W, 310B, and 310G of the corresponding light-emitting structures 300R, 300W, 300B, and 300G and the upper electrodes 330R, 330W, 330B, and 330G. It is possible to generate light having a luminance corresponding to the voltage difference therebetween. For example, the emission layers 320R, 320W, 320B, and 320G may include an emission material layer (EML) including an emission material. The light emitting material may include an organic material, an inorganic material, or a hybrid material.

The light emitting layers 320R, 320W, 320B, and 320G may have a multi-layer structure to increase light emitting efficiency. For example, the emission layers 320R, 320W, 320B, and 320G may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer. (Electron Injection Layer; EIL) may further include at least one.

The upper electrodes 330R, 330W, 330B, and 330G may include a conductive material. The upper electrodes 330R, 330W, 330B, and 330G may include a material different from that of the lower electrodes 310R, 310W, 310B, and 310G. For example, the upper electrodes 330R, 330W, 330B, and 330G may include a metal having high reflectance. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, light generated by the emission layers 320R, 320W, 320B, and 320G may be emitted to the outside through the lower substrate 110 .

The light emitting structures 300R, 300W, 300B, and 300G may overlap the pixel areas R-PA, W-PA, B-PA, and G-PA. For example, the light emitting structures 300R, 300W, 300B, and 300G are located on the red light emitting structure 300R positioned on the red pixel area R-PA and the white pixel area W-PA. a white light emitting structure 300W, a blue light emitting structure 300B located on the blue pixel area B-PA, and a green light emitting structure 300G located on the green pixel area G-PA. can

Each of the light emitting structures 300R, 300W, 300B, and 300G may be controlled by the driving circuit of the corresponding pixel area R-PA, W-PA, B-PA, and G-PA. For example, the lower electrodes 310R, 310W, 310B, and 310G of each of the light emitting structures 300R, 300W, 300B, and 300G are in the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA. It may be electrically connected to the drain electrode 260 of the second thin film transistor Tr2 positioned in the driving area DA. The overcoat layer 150 is an upper portion overlapping the drain electrode 260 of the second thin film transistor Tr2 positioned in each pixel area R-PA, W-PA, B-PA, and G-PA. It may include contact holes 150h. The lower passivation layer 140 may include lower contact holes 140h aligned with the upper contact holes 150h of the overcoat layer 150 . Each of the lower electrodes 310R, 310W, 310B, and 310G has a sidewall and an upper contact hole ( 150h).

Each of the light emitting structures 300R, 300W, 300B, and 300G may not overlap a driving circuit positioned in the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA. For example, the light emitting structures 300R, 300W, 300B, and 300G may be located in the light emitting area EA of the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA, respectively. have. Accordingly, in the organic light emitting diode display according to an exemplary embodiment of the present invention, the driving circuit of each pixel area R-PA, W-PA, B-PA, and G-PA corresponds to the light emitting structures 300R, 300W, 300B, and 300G. ) may not interfere with the external emission of light generated by

The light emitting structures 300R, 300W, 300B, and 300G may operate independently. For example, the lower electrodes 310R, 310W, 310B, and 310G of each of the light-emitting structures 300R, 300W, 300B, and 300G are adjacent to the lower electrodes 310R of the light-emitting structures 300R, 300W, 300B, and 300G. , 310W, 310B, 310G) and may be insulated. An edge of each of the lower electrodes 310R, 310W, 310B, and 310G may be covered by the bank insulating layer 160 . For example, the bank insulating layer 160 may overlap a driving circuit of each of the pixel areas R-PA, W-PA, B-PA, and G-PA. Partial regions of the lower electrodes 310R, 310W, 310B, and 310G exposed by the bank insulating layer 160 are the emission regions of the corresponding pixel regions R-PA, W-PA, B-PA, and G-PA. It may be located within (EA). The light emitting layers 320R, 320W, 320B, 320G and the upper electrodes 330R, 330W, 330B, and 330G of each of the light emitting structures 300R, 300W, 300B, and 300G have a lower portion exposed by the bank insulating film 160 . It may be stacked on some regions of the electrodes 310R, 310W, 310B, and 310G. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, the light emitting structures 300R, 300W, 300B, and 300W of each pixel area R-PA, W-PA, B-PA, and G-PA correspond to The reduction in light extraction efficiency of the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA may be prevented by the structure for electrically connecting to the driving circuit.

The bank insulating layer 160 may extend on the non-emission area NEA of the lower substrate 110 . For example, the signal lines GL, DL1-DL4, RL, PL1, and PL2 may include a region overlapping the bank insulating layer 160 .

The bank insulating layer 160 may include an insulating material. For example, the bank insulating layer 160 may include an organic insulating material. The bank insulating layer 160 may include a material different from that of the overcoat layer 150 .

The light emitting structures 300R, 300W, 300B, and 300G may generate light having a constant color. For example, the red light-emitting structure 300R, the white light-emitting structure 300W, the blue light-emitting structure 300B, and the green light-emitting structure 300G may generate white light. The light emitting layers 320R, 320W, 320B, and 320G of each of the light emitting structures 300R, 300W, 300B, and 300G include the light emitting layers 320R, 320W, 320B, and 320G of the adjacent light emitting structures 300R, 300W, 300B, and 300G. can be connected For example, the light emitting layers 320R, 320W, 320B, and 320G of each of the light emitting structures 300R, 300W, 300B, and 300G may extend on the bank insulating layer 160 . The upper electrodes 330R, 330W, 330B, and 330G of each of the light emitting structures 300R, 300W, 300B, and 300G are the light emitting layers 320R, 320W, 320B, and 320G of the corresponding light emitting structures 300R, 300W, 300B, and 300G. can be extended according to For example, the upper electrodes 330R, 330W, 330B, and 330G of each of the light-emitting structures 300R, 300W, 300B, and 300G are adjacent to the upper electrodes 330R, 330W of the light-emitting structures 300R, 300W, 300B, and 300G. , 330B, 330G) may be connected.

Color filters 400R, 400B, and 400G may be positioned between the lower substrate 110 and the light emitting structures 300R, 300W, 300B, and 300G. For example, the color filters 400R, 400B, and 400G may be positioned between the lower passivation layer 140 and the overcoat layer 150 . Steps caused by the color filters 400R, 400B, and 400G may be removed by the overcoat layer 150 . The color filters 400R, 400B, and 400G may overlap the light emitting structures 300R, 300W, 300B, and 300G. For example, each of the color filters 400R, 400B, and 400G may include an area located within the emission area EA of the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA. can

The color filters 400R, 400G, and 400B may overlap partial regions of the corresponding lower electrodes 310R, 320W, 320B, and 320G exposed by the bank insulating layer 160 . The color filters 400R, 400B, and 400G may implement a specific color using light propagating from the corresponding light emitting structures 300R, 300W, 300B, and 300G toward the lower substrate 110 . For example, the color filters 400R, 400B, and 400G may include a red color filter 400R positioned between the red pixel area R-PA of the lower substrate 110 and the red light emitting structure 300R. , a blue color filter 400B positioned between the blue pixel area B-PA of the lower substrate 110 and the blue light emitting structure 300B and the green pixel area G- of the lower substrate 110 . PA) and a green color filter 400G positioned between the green light emitting structure 300G. In the organic light emitting diode display according to an embodiment of the present invention, since the light emitting structures 300R, 300W, 300B, and 300G generate white light, the white pixel area W-PA of the lower substrate 110 is The color filters 400R, 400B, and 400G may not be positioned on the upper surface.

Protrusion patterns 500 may be positioned on the non-emission area NEA of the lower substrate 110 . The protrusion patterns 500 may be positioned between the light emitting structures 300R, 300W, 300B, and 300G. For example, the protrusion patterns 500 may be positioned between the emission areas EA of the pixel areas R-PA, W-PA, B-PA, and G-PA.

The protrusion patterns 500 may partially overlap one of the signal lines GL, DL1-DL4, RL, PL1, and PL2. For example, a partial region of each protrusion pattern 500 may overlap the data lines DL1 - DL4 . The data lines DL1 to DL4 are a first data line DL1 electrically connected to a driving circuit located in the red pixel area R-PA, and a driving circuit located in the white pixel area W-PA. in the second data line DL2 electrically connected to the , a third data line DL3 electrically connected to the driving circuit positioned in the blue pixel area B-PA, and the green pixel area G-PA. It may include a fourth data line DL4 electrically connected to the located driving circuit. A partial region of each protrusion pattern 500 overlapping the data lines DL1 - DL4 is electrically connected to the corresponding data lines DL1 - DL4 in the pixel areas R-PA, W-PA, B-PA, G -PA).

Each of the protrusion patterns 500 may include a first side surface 501S and a second side surface 502S opposite to the first side surface 501S. The first side surface 501S and the second side surface 502S may have a positive taper. For example, the horizontal width of each protrusion pattern 500 may decrease as the distance from the lower substrate 110 increases. The first side surface 501S of each protrusion pattern 500 has an upper portion facing the pixel areas R-PA, W-PA, B-PA, and G-PA electrically connected to the corresponding data lines DL1-DL4. can have sides. The data lines DL1 - DL4 may overlap the first side surface 501S of the corresponding protrusion pattern 500 .

The protrusion pattern 500 may be positioned between the lower substrate 110 and the data lines DL1 - DL4 . For example, the data lines DL1 - DL4 may be formed of the same material as the source electrode 250 and the drain electrode 260 . The protrusion pattern 500 may be positioned between the interlayer insulating layer 240 and the data lines DL1 - DL4 .

The data lines DL1 - DL4 may extend along the surface of the corresponding protrusion pattern 500 . For example, the data lines DL1 - DL4 may directly contact the corresponding protrusion pattern 500 . The data lines DL1 - DL4 are formed in a first region R1 positioned on the first side surface 501S of the corresponding protrusion pattern 500 , and a corresponding pixel region R-PA from the first region R1 , On the upper surface of the corresponding protrusion pattern 500 facing the upper substrate 120 from the second region R2 and the first region R1 extending in the W-PA, B-PA, and G-PA directions It may include a second region R3 extending to the The second region R3 may include a side surface positioned on the upper surface of the corresponding protrusion pattern 500 . For example, the second side surfaces 502S of the protrusion patterns 500 may directly contact the lower passivation layer 140 .

The first region R1 of the data lines DL1 - DL4 may be inclined in the same direction as the first side surface 501S of the corresponding protrusion pattern 500 . For example, the first region R1 of the data lines DL1 to DL4 has a positive taper shape having an upper surface facing the corresponding pixel regions R-PA, W-PA, B-PA, and G-PA. It may be a sloped area. That is, the first data line DL1 and the second data line DL2 are positioned on the non-emission area NEA between the red pixel area R-PA and the white pixel area W-PA. In the organic light emitting diode display according to an embodiment of the present invention, the first region R1 of the first data line DL1 is a red emission region EA of the red pixel region R-PA. A white light emitting area ( ) having an upper surface facing (R-EA), wherein the second area R2 of the second data line DL2 is the light emitting area EA of the white pixel area W-PA; W-EA). Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, the light generated by the light emitting structures 300R, 300W, 300B, and 300G is transmitted through the corresponding data lines DL1 to DL4 in the corresponding pixel area R− PA, W-PA, B-PA, and G-PA) may be reflected in the direction of the light emitting area EA. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, light leakage may be prevented by the data lines DL1 to DL4. In addition, in the organic light emitting diode display according to an embodiment of the present invention, light extraction efficiency may be improved.

The protrusion patterns 500 may include a material having a lower reflectance than the data lines DL1 - DL4 . For example, the protrusion patterns 500 may include an insulating material. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, reflection of light by the protruding patterns 500 may be prevented. The protrusion patterns 500 may include a photoreactive material. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, the process of forming the protrusion patterns 500 may be simplified. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, light leakage can be prevented without adding a complicated process.

The bank insulating layer 160 may include a side surface 160S positioned on the non-emission area NEA of the lower substrate 110 . For example, the bank insulating film 160 covering the edges of each of the lower electrodes 310R, 310W, 310B, and 310G includes the bank insulating film 160 covering the edges of the adjacent lower electrodes 310R, 310W, 310B, and 310G, and can be spaced apart. The side surface 160S of the bank insulating layer 160 may have a positive taper. The upper electrodes 330R, 330W, 330B, and 330G may extend on the side surface 160S of the bank insulating layer 160 . Accordingly, in the organic light emitting diode display according to the exemplary embodiment of the present invention, the pixel area R-PA adjacent to the light reflected by the data lines DL1 to DL4 by the upper electrodes 330R, 300W, 300B, and 300G. , W-PA, B-PA, G-PA) direction can be prevented from being reflected back. Accordingly, light leakage can be effectively prevented in the organic light emitting diode display according to an embodiment of the present invention.

The color filters 400R, 400B, and 400G may extend onto the data lines DL1 to DL4 and the protrusion pattern 500 positioned on the adjacent non-emission area NEA. Accordingly, even when the light reflected by the data lines DL1 - DL4 is emitted to the outside, the same color as the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA can be realized.

An upper passivation layer 170 may be positioned between the light emitting structures 300R, 300W, 300B, and 300G and the upper substrate 120 . The upper protective layer 170 may prevent damage to the light emitting structures 300R, 300W, 300B, and 300G from external impact and moisture. The upper passivation layer 170 may be located close to the light emitting structures 300R, 300W, 300B, and 300G. For example, the upper electrodes 330R, 300W, 330B, and 300G of the light emitting structures 300R, 300W, 300B, and 300G may directly contact the upper passivation layer 170 . The upper passivation layer 170 may extend along the upper electrodes 330R, 330G, 330B, and 330W of the light emitting structures 300R, 300W, 300B, and 300G.

The upper passivation layer 170 may include an insulating material. The upper passivation layer 170 may have a multilayer structure. For example, the upper passivation layer 170 may have a structure in which an organic layer including an organic material is positioned between inorganic layers including an inorganic material.

An encapsulation layer 180 may be positioned between the upper passivation layer 170 and the upper substrate 120 . The upper substrate 120 may be coupled to the lower substrate 110 on which the light emitting structures 300R, 300W, 300B, and 300G are formed by the encapsulation layer 180 . For example, the encapsulation layer 180 may include an adhesive material.

The encapsulation layer 180 may have a multilayer structure. For example, the encapsulation layer 180 may include a first encapsulation layer 181 and a second encapsulation layer 182 . The second encapsulation layer 182 may be positioned between the first encapsulation layer 181 and the upper substrate 120 .

The first encapsulation layer 181 and the second encapsulation layer 182 may include a curable material. For example, the first encapsulation layer 181 and the second encapsulation layer 182 may include a thermosetting resin. The second encapsulation layer 182 may include a material different from that of the first encapsulation layer 181 .

The encapsulation layer 180 may prevent penetration of moisture. For example, the second encapsulation layer 182 may include a moisture absorption material 182p. Moisture penetrating from the outside may be captured by the hygroscopic material 182p. The first encapsulation layer 181 may relieve stress applied to the light emitting structures 300R, 300W, 300B, and 300G by the expansion of the moisture absorbing material 182p.

As a result, in the organic light emitting diode display according to an embodiment of the present invention, the data lines DL1 to DL4 have upper surfaces facing the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA. By including the positively tapered inclined area, the light reflected by the data lines DL1 to DL4 is transmitted to the light emitting area EA of the corresponding pixel areas R-PA, W-PA, B-PA, and G-PA. ) can be entered. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, light leakage by the data lines DL1 to DL4 may be prevented. In addition, in the organic light emitting diode display according to an embodiment of the present invention, light extraction efficiency may be improved by the data lines DL1 to DL4. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, image quality may be improved.

In the organic light emitting diode display according to an exemplary embodiment of the present invention, each pixel area R-PA, W-PA, B-PA, and G-PA is described as having the same area. However, in the organic light emitting diode display according to another embodiment of the present invention, the pixel areas R-PA, W-PA, B-PA, and G-PA may have different areas. For example, in the organic light emitting diode display according to another embodiment of the present invention, the area of the light emitting area EA of each pixel area R-PA, W-PA, B-PA, and G-PA varies according to the light emission efficiency. can be different. Accordingly, the organic light emitting diode display according to another exemplary embodiment of the present invention efficiently controls the luminance deviation of each pixel area R-PA, W-PA, B-PA, and G-PA without worrying about light leakage. can do.

In the organic light emitting diode display according to an embodiment of the present invention, the length of the protrusion pattern 500 in the direction in which the data lines DL1 to DL4 extend is the corresponding pixel area R-PA, W-PA, B-PA, It is described as being equal to the length of the light emitting area EA of G-PA). However, in the organic light emitting diode display according to another exemplary embodiment, the protrusion pattern 500 may extend along the corresponding data lines DL1 to DL4. Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, the data line ( Some regions of DL1-DL4) may include inclined regions of a positive taper. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, the non-emission area is located between the driving areas DA of the pixel areas R-PA, W-PA, B-PA, and G-PA. Light leakage from (NEA) can be prevented.

In the organic light emitting diode display according to an embodiment of the present invention, the light emitting area EA and the driving area DA of each pixel area R-PA, W-PA, B-PA, and G-PA include the data line It is described as being positioned side by side along (DL1-DL4). However, in the organic light emitting diode display according to another exemplary embodiment of the present invention, each pixel area R-PA, W-PA, B-PA, and G-PA is aligned in a direction crossing the data lines DL1 to DL4. The light emitting area EA and the driving area DA located therein may be included. In this case, the signal lines GL, DL1 to DL4, RL, PL1, and PL2 crossing the data lines DL1 to DL4 may include an inclined region having a positive taper. Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, the signal lines GL and DL1- Light leakage by DL4, RL, PL1, PL2) can be prevented.

In the organic light emitting diode display according to an embodiment of the present invention, two data lines DL1 to DL4 are positioned on the non-emission area NEA, and each data line DL1 to DL4 overlaps the separated protrusion pattern 500 . is described as doing However, in the organic light emitting diode display according to another embodiment of the present invention, each of the two data lines DL1 to DL4 may have a positively tapered inclined region by a single protrusion pattern 500 . For example, as shown in FIG. 4 , in the organic light emitting diode display according to another exemplary embodiment, the first data line DL1 is a side surface of the protrusion pattern 500 toward the red emission area R-EA. and the second data line DL2 may be positioned on a side surface of the protrusion pattern 500 facing the white light emitting area W-EA. Accordingly, the organic light emitting diode display according to another exemplary embodiment may prevent light leakage by the data lines DL1 to DL4 by using the protrusion patterns 500 having various shapes.

In the organic light emitting diode display according to an exemplary embodiment of the present invention, two data lines DL1 to DL4 are positioned between adjacent pixel areas R-PA, W-PA, B-PA, and G-PA. . However, in the organic light emitting diode display according to another exemplary embodiment of the present invention, the corresponding pixel areas R-PA, W- The data lines DL1-DL4 electrically connected to the PA, B-PA, and G-PA) and including an inclined region of a positive taper may be positioned therein. Accordingly, the organic light emitting diode display according to another embodiment of the present invention has various structures. Accordingly, the organic light emitting diode display according to another embodiment of the present invention includes pixel areas R-PA, W-PA, and B- having various structures. PA, G-PA) can prevent light leakage.

In the organic light emitting diode display according to an embodiment of the present invention, it will be described that the protrusion patterns 500 overlap only the data lines DL1 - DL4 . However, in the organic light emitting diode display according to another embodiment of the present invention, different types of signal lines GL, DL1-DL4, RL, PL1, and PL2 positioned in parallel have a positive taper due to the protrusion pattern 500 . It may include a sloped area. For example, as shown in FIG. 5 , a non-emission area NEA, a white light-emitting area W-EA, and a non-emission area between the red light-emitting area R-EA and the blue light-emitting area B-EA are shown in FIG. In the organic light emitting diode display according to another embodiment of the present invention in which (NEA) are positioned side by side, the non-emission area NEA is positioned between the red light emitting area R-EA and the white light emitting area W-EA. a first protrusion pattern 510 partially overlapping with the data lines DL1 to DL4 on A second protrusion pattern 520 partially overlapping the reset voltage supply line PL2 may be included on the NEA. The second protruding patterns 520 may partially overlap the power voltage supply line PL1 . Two data lines DL1 - DL4 may be positioned on the non-emission area NEA positioned between the red light emitting area R-EA and the white light emitting area W-EA. For example, a horizontal width of the reset voltage supply line PL2 may be greater than a horizontal width of the data lines DL1 - DL4 . A horizontal width of the second protrusion pattern 520 may be greater than a horizontal width of the first protrusion pattern 510 . The reset voltage supply line PL2 may include the same material as the data lines DL1 to DL4 . The second protrusion pattern 520 may include the same material as the first protrusion pattern 510 . Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, light extraction efficiency may be effectively improved. Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, image quality may be improved.

The length of the inclined region of the reset voltage supply line PL2 by the second protruding pattern 520 is the same as the length of the inclined region of the data line PL1 to PL4 by the first protruding pattern 510 . may be the same. For example, a side length of the second protruding pattern 520 may be the same as a side length of the first protruding pattern 510 . Accordingly, in the organic light emitting diode display according to another exemplary embodiment, the amount of light reflected by the inclined regions of the respective signal lines GL, DL1-DL4, RL, PL1, and PL2 may be the same. Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, light leakage and luminance deviation may be prevented.

110: lower substrate 120: upper substrate
300R, 300W, 300B, 300G: light emitting structure
400R, 400B, 400G: color filter
500: protrusion pattern 500S1: first side
500S2: second side
DL1, DL2, DL3, DL4: data line

Claims (13)

a lower substrate including a plurality of light-emitting areas and a non-emission area positioned between the plurality of light-emitting areas;
a light emitting structure positioned on the light emitting area of the lower substrate and including a lower electrode, a light emitting layer, and an upper electrode stacked in order;
an overcoat layer between the lower substrate and the light emitting structure;
a protrusion pattern under the overcoat layer, located on the non-emission area of the lower substrate, and including first and second side surfaces facing different light-emitting areas adjacent to each other; and
and a signal line positioned on the first side of the protrusion pattern,
The first side surface and the second side surface of the protrusion pattern face each other and have a positive taper. The method of claim 1,
The protrusion pattern includes an insulating material. The method of claim 1,
Further comprising a color filter positioned between the lower substrate and the light emitting structure,
The color filter extends on the protrusion pattern and the signal line. The method of claim 1,
and the signal line includes a side surface positioned on an upper surface of the protrusion pattern opposite to the lower substrate. The method of claim 1,
Further comprising a bank insulating film covering the edge of the lower electrode,
and the bank insulating layer has a side surface positioned on the non-emission area of the lower substrate. 6. The method of claim 5,
The protrusion pattern overlaps the bank insulating layer. 6. The method of claim 5,
The side surface of the bank insulating layer has a positive taper. 6. The method of claim 5,
The upper electrode extends on the side surface of the bank insulating layer. a first protrusion pattern each positioned on a first non-emission area of a lower substrate and having a positively tapered slanted side surface and a first signal line provided on the slanted side surface of the first protruding pattern;
a second protrusion pattern positioned on a second non-emission area of the lower substrate spaced apart from the first non-emission area, respectively, and provided on the second protrusion pattern and a second protrusion pattern having a positively tapered slanted side surface; and
a light emitting structure positioned on an overcoat layer in the light emitting region of the lower substrate positioned between the first non-emissive region and the second non-emissive region;
and the first and second signal wirings on the inclined side surfaces of the first protrusion pattern and the second protrusion pattern include an upper surface facing the light emitting area under the overcoat layer. 10. The method of claim 9,
The second signal line includes the same material as the first signal line. 10. The method of claim 9,
A horizontal width of the second signal line is different from a horizontal width of the first signal line. 12. The method of claim 11,
A horizontal width of the second protrusion pattern is different from a horizontal width of the first protrusion pattern. 12. The method of claim 11,
The length of the inclined side surface of the second protrusion pattern on which the second signal wire is disposed is the same as the length of the inclined side surface of the first protrusion pattern on which the first signal wire is disposed.

Images