KR20200082434A - Display apparatus having a driving circuit and a light-emitting device - Google Patents

Abstract

The present invention relates to a display apparatus including a driving circuit and a light emitting device which are stacked on a device substrate. An overcoat layer, an intermediate conductive layer, and an intermediate insulating layer may be positioned between the driving circuit and the light emitting device. The driving circuit may be covered by the intermediate conductive layer. A specific voltage may be applied to the intermediate conductive layer. Accordingly, in the display apparatus according to a technical idea of the present invention, malfunction of the light emitting device due to the driving circuit and signal wires that transmit signals to the driving circuit can be prevented.

Description

Display apparatus having a driving circuit and a light-emitting device

The present invention relates to a display device including a driving circuit and a light emitting element stacked on an element substrate.

In general, electronic devices such as monitors, TVs, notebooks, and digital cameras include display devices for realizing images. For example, the display device may include a plurality of light emitting elements. Each light emitting device can emit light representing a specific color. For example, each light emitting device may include a first electrode, a light emitting layer, and a second electrode stacked in order.

The display device may include an element substrate supporting the light emitting elements. A driving circuit for controlling the light emitting device and signal wirings for transmitting signals to each driving circuit may be located between the device substrate and each light emitting device. For example, each driving circuit may include at least one thin film transistor for supplying a driving current according to a gate signal applied through the gate line and a data signal transmitted through the data line to the corresponding light emitting device.

In the display device, a distance between each electrode of the thin film transistor and a distance between the signal lines are decreased by an increase in resolution, and an operation speed of the driving circuit and a signal transmission speed applied through the signal lines are reduced. Can be increased. Accordingly, in the display device, the operation of the light emitting element may be affected by noise caused by the driving circuit and the signal wires. That is, in the display device, the light emitting device may malfunction due to the driving circuit and the signal wiring.

The problem to be solved by the present invention is to provide a display device capable of preventing malfunction of a light emitting device due to a driving circuit and signal wirings for transmitting signals to the driving circuit.

Another problem to be solved by the present invention is to provide a driving circuit and a display device capable of blocking noise caused by signal wires transmitting a signal to the driving circuit.

The problems to be solved by the present invention are not limited to the aforementioned problems. The tasks not mentioned herein will be clearly understood by those skilled in the art from the following description.

The display device according to the technical idea of the present invention for achieving the above-mentioned problem includes an element substrate. A driving circuit and an overcoat layer are positioned on the element substrate. The overcoat layer covers the driving circuit. An intermediate conductive layer is located on the overcoat layer. A light emitting element is positioned on the intermediate conductive layer. The light emitting device includes a first electrode, a light emitting layer, and a second electrode stacked on some regions of the intermediate conductive layer. An intermediate insulating film is positioned between the intermediate conductive layer and the light emitting element.

The reflectance of the first electrode may be lower than the transmittance of the first electrode. The reflectance of the intermediate conductive layer may be higher than that of the first electrode.

The driving circuit may include a thin film transistor selectively connecting the intermediate conductive layer and the first electrode.

The conductivity of the intermediate conductive layer may be higher than that of the first electrode.

The intermediate conductive layer may be connected to a power supply voltage supply line.

A bank insulating layer may be positioned on the intermediate insulating layer. The bank insulating layer may cover the edge of the first electrode. The intermediate connection hole passing through a portion of the overcoat layer positioned between the intermediate conductive layer and the power voltage supply line may overlap the bank insulating layer.

The size of the intermediate conductive layer may be larger than the size of the first electrode.

The overcoat layer and the intermediate insulating layer may each include a contact hole for electrically connecting the first electrode of the light emitting element to the driving circuit. The intermediate conductive layer may include an intermediate through hole overlapping a portion of the driving circuit. The contact hole of the intermediate insulating layer may be located in the intermediate through hole. The side wall of the intermediate through hole may be covered by an intermediate insulating film.

The display device according to the technical concept of the present invention for achieving another problem to be solved by the present invention includes a unit pixel. The unit pixel is defined by a data line and a first gate line. The data line extends in the first direction. The gate line extends in a second direction perpendicular to the first direction. A driving circuit and a light emitting element are located in the unit pixel. The driving circuit includes at least one thin film transistor. The light emitting element includes a first electrode electrically connected to the driving circuit. An intermediate conductive layer is positioned between the driving circuit and the light emitting element. The intermediate conductive layer is insulated from the light emitting element. The driving circuit overlaps some areas of the intermediate conductive layer.

An encapsulation substrate may be positioned on the light emitting device. A color filter may be located on the surface of the encapsulation substrate facing the light emitting element. The color filter can overlap the light emitting element.

The intermediate conductive layer can extend in the first direction.

The horizontal length of the intermediate conductive layer in the second direction may be greater than the horizontal length of the unit pixel in the second direction.

The second gate line may extend in the second direction. The driving circuit may include a first thin film transistor, a second thin film transistor, a third thin film transistor, and a storage capacitor. The first thin film transistor may be controlled by the first gate line. The second thin film transistor can be controlled by the first thin film transistor. The third thin film transistor can be controlled by the second gate line. The storage capacitor may be located between the gate electrode and the drain electrode of the second thin film transistor. The intermediate conductive layer may be electrically connected to one electrode of the storage capacitor by the third thin film transistor.

The first electrode of the light emitting device may be electrically connected to one electrode of the storage capacitor.

The power voltage supply line may extend in the first direction. The drain electrode of the second thin film transistor may be electrically connected to the power voltage supply line by the first thin film transistor.

The display device according to the inventive concept may include an intermediate conductive layer positioned between the driving circuit and the light emitting element, and insulated from the light emitting element. Accordingly, in the display device according to the exemplary embodiment of the present invention, malfunction of the light emitting device due to the driving circuit and signal wirings for transmitting signals to the driving circuit may be prevented. Therefore, reliability may be improved in the display device according to the exemplary embodiment of the present invention.

1 is a view schematically showing a display device according to an embodiment of the present invention.
FIG. 2 is a view showing a cross-section taken along line I-I' of FIG. 1.
3 is a cross-sectional view taken along line II-II' of FIG. 1.
4, 6, and 8 are views illustrating a display device according to another embodiment of the present invention.
5 is a view showing a cross-section taken along line III-III' of FIG. 4.
7 is a cross-sectional view taken along line IV-IV' of FIG. 6.
9 is a cross-sectional view taken along line V-V' of FIG. 8.

The details of the above object and the technical configuration of the present invention and the effect of the effect thereof will be more clearly understood by the following detailed description with reference to the drawings showing embodiments of the present invention. Here, since the embodiments of the present invention are provided to enable the technical spirit of the present invention to be sufficiently transmitted to those skilled in the art, the present invention may be embodied in other forms so as not to be limited to the embodiments described below.

In addition, parts indicated by the same reference numerals throughout the specification mean the same components, and in the drawings, the length and thickness of a layer or region may be exaggerated for convenience. In addition, when the first component is described as being "on" the second component, the first component and the first component are not only located on the upper side in direct contact with the second component, but also the first component and the Also included is the case where the third component is positioned between the second components.

Here, the terms first, second, etc. are used to describe various components, and are used for the purpose of distinguishing one component from other components. However, the first component and the second component may be arbitrarily named according to the convenience of those skilled in the art without departing from the technical spirit of the present invention.

Terms used in the specification of the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. For example, a component expressed as a singular includes a plurality of components unless the context clearly refers to the singular. Also, in the specification of the present invention, terms such as “comprises” or “haves” are intended to designate the existence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, or It should be understood that it does not preclude the existence or addition possibility of other features or numbers, steps, actions, components, parts or combinations thereof.

In addition, unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person skilled in the art to which the present invention pertains. Terms, such as those defined in the commonly used dictionary, should be interpreted as having meanings consistent with meanings in the context of the related art, and unless they are explicitly defined in the specification of the present invention, in an ideal or excessively formal meaning. Is not interpreted.

(Example)

1 is a view schematically showing a display device according to an embodiment of the present invention. FIG. 2 is a view showing a cross-section taken along line I-I' of FIG. 1. 3 is a cross-sectional view taken along line II-II' of FIG. 1.

1 to 3, a display device according to an exemplary embodiment of the present invention may include a device substrate 100. The device substrate 100 may include an insulating material. For example, the device substrate 100 may include glass or plastic.

Signal lines GL, DL, and PL may be positioned on the device substrate 100. For example, the signal lines GL, DL, and PL include a gate line GL for applying a gate signal, a data line DL for transmitting a data signal, and a power voltage supply line PL1 for supplying a power voltage. It may include. The gate line GL may intersect the data line DL. For example, the data line DL may extend in the first direction Y, and the gate line GL may extend in the second direction X perpendicular to the first direction Y. The power voltage supply line PL may be parallel to the data line DL. For example, the power voltage supply line PL may extend in the first direction Y. The power voltage supply line PL may cross the gate line GL.

The signal lines GL, DL, and PL may define a unit pixel PA. For example, the unit pixel PA may be positioned between the data line DL and the power voltage supply line PL. A driving circuit and a light emitting device 300 may be positioned in the unit pixel PA. The driving circuit may supply driving current according to the gate signal and the data signal to the light emitting device 300. For example, the driving circuit may include a first thin film transistor TR1, a second thin film transistor TR2, and a storage capacitor Cst.

The first thin film transistor TR1 may be controlled by the gate signal. The first thin film transistor TR1 may transfer the data signal according to the gate signal. For example, the first thin film transistor TR1 includes a first semiconductor pattern 211, a first gate insulating film 212, a first gate electrode 213, a first lower interlayer insulating film 214, and a first source electrode 215, a first upper interlayer insulating layer 216 and a first drain electrode 217.

The first semiconductor pattern 211 may be positioned close to the device substrate 100. The first semiconductor pattern 211 may include a semiconductor material. For example, the first semiconductor pattern 211 may include amorphous silicon or polycrystalline silicon. The first semiconductor pattern 211 may be an oxide semiconductor. For example, the first semiconductor pattern 211 may include IGZO.

The first semiconductor pattern 211 may include a source region, a drain region, and a channel region. The channel region may be located between the source region and the drain region. The channel region may have a lower conductivity than the source region and the drain region. For example, the source region and the drain region may have a higher concentration of impurities than the channel region.

The first gate insulating layer 212 may be positioned on the first semiconductor pattern 211. The first gate insulating layer 212 may extend outside the first semiconductor pattern 211. For example, the side surface of the semiconductor pattern 211 may be covered by the first gate insulating layer 212.

The first gate insulating layer 212 may include an insulating material. For example, the first gate insulating layer 212 may include silicon oxide (SiO) and/or silicon nitride (SiN). The first gate insulating layer 212 may have a multi-layer structure. The first gate insulating layer 212 may include a high-K material. For example, the first gate insulating layer 212 may include hafnium oxide (HfO) or titanium oxide (TiO).

The first gate electrode 213 may be positioned on the first gate insulating layer 212. The first gate electrode 213 may overlap the channel region of the first semiconductor pattern 212. For example, the first gate electrode 213 may be insulated from the first semiconductor pattern 211 by the first gate insulating layer 212.

The first gate electrode 213 may include a conductive material. For example, the first gate electrode 213 may include metals such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W).

The first lower interlayer insulating layer 214 may be positioned on the first gate electrode 213. For example, a side surface of the first gate electrode 213 may be covered by the first lower interlayer insulating layer 214. The first lower interlayer insulating layer 214 may extend outside the first semiconductor pattern 211. For example, the first lower interlayer insulating layer 214 may directly contact the first gate insulating layer 212 outside the first semiconductor pattern 211.

The first lower interlayer insulating layer 214 may include an insulating material. The first lower interlayer insulating layer 214 may include an inorganic insulating material. For example, the first lower interlayer insulating layer 214 may include silicon oxide (SiO).

The first source electrode 215 may be positioned on the first lower interlayer insulating layer 214. The first source electrode 215 may be electrically connected to the source region of the first semiconductor pattern 211. For example, the first gate insulating layer 212 and the first lower interlayer insulating layer 214 may include a contact hole partially exposing the source region of the first semiconductor pattern 211. The first source electrode 215 may directly contact the source region of the first semiconductor pattern 211 exposed by the first gate insulating layer 212 and the first lower interlayer insulating layer 214.

The first source electrode 215 may include a conductive material. For example, the first source electrode 215 may include metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W). The first source electrode 215 may include a different material from the first gate electrode 213.

The first upper interlayer insulating layer 216 may be positioned between the first lower interlayer insulating layer 214 and the first source electrode 215. For example, the first upper interlayer insulating layer 216 may include a contact hole partially exposing the source region of the first semiconductor pattern 211. The first upper interlayer insulating layer 216 may extend outside the first semiconductor pattern 211.

The first drain electrode 216 may be positioned between the first lower interlayer insulating layer 214 and the first upper interlayer insulating layer 216. The first drain electrode 216 may be electrically connected to the drain region of the first semiconductor pattern 211. For example, the first gate insulating layer 212 and the first lower interlayer insulating layer 214 may include a contact hole partially exposing the drain region of the first semiconductor pattern 211. The first drain electrode 216 may directly contact the drain region of the first semiconductor pattern 211 exposed by the first gate insulating layer 212 and the first lower interlayer insulating layer 214.

The first drain electrode 216 may include a conductive material. For example, the first drain electrode 216 may include metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), and tungsten (W). The first drain electrode 216 may include a different material from the first source electrode 215 and the first gate electrode 213.

The second thin film transistor TR2 may be controlled by the first thin film transistor TR1. For example, the second thin film transistor TR2 may be controlled by the data signal transmitted by the first thin film transistor TR1 according to the gate signal. The second thin film transistor TR2 may apply a driving current according to the data signal to the light emitting device 300. The second thin film transistor TR2 may have the same structure as the first thin film transistor TR1. For example, the second thin film transistor TR2 includes a second semiconductor pattern 221, a second gate insulating film 222, a second gate electrode 223, a second lower interlayer insulating film 224, and a second source electrode. 225, a second upper interlayer insulating layer 226 and a second drain electrode 227.

The second gate insulating layer 222 may be positioned between the second semiconductor pattern 221 and the second gate electrode 223. The second gate insulating layer 222 may extend outside the second semiconductor pattern 221. For example, the second gate insulating layer 222 may be connected to the first gate insulating layer 212.

The second source electrode 225 may be insulated from the second gate electrode 223 and the second drain electrode 227 by the second lower interlayer insulating film 224 and the second upper interlayer insulating film 226. Can. The second drain electrode 227 may be positioned between the second lower interlayer insulating film 224 and the second upper interlayer insulating film 226. The second lower interlayer insulating layer 224 and the second upper interlayer insulating layer 226 may extend outside the second semiconductor pattern 221. For example, the second lower interlayer insulating film 224 may be connected to the first lower interlayer insulating film 214, and the second upper interlayer insulating film 226 may be connected to the first upper interlayer insulating film 216. .

The second gate electrode 223 of the second thin film transistor TR2 may be selectively connected to the data line DL by the first thin film transistor TR1. For example, the first gate electrode 213 of the first thin film transistor TR1 is electrically connected to the gate line GL and the first source electrode 215 of the first thin film transistor TR1. ) Is electrically connected to the data line DL, and the first drain electrode 217 of the first thin film transistor TR1 is connected to the second gate electrode 223 of the second thin film transistor TR2. Can be connected.

The second thin film transistor TR2 may supply a driving current according to the data signal to the light emitting device 300. For example, the second thin film transistor TR2 may connect the power supply voltage supply line PL and the light emitting device 300 operatively. The second thin film transistor TR2 may be positioned between the power supply voltage supply line PL and the light emitting device 300. For example, the second source electrode 225 of the second thin film transistor TR2 is electrically connected to the power voltage supply line PL, and the second drain electrode of the second thin film transistor TR2. 227 may be electrically connected to the light emitting device 300.

The storage capacitor Cst may be maintained for one frame in a signal applied to the second gate electrode 223 of the second thin film transistor TR2. The storage capacitor Cst may be positioned between the second gate electrode 223 and the drain electrode 227 of the second thin film transistor TR2. For example, the storage capacitor Cst may be formed by the second gate electrode 223, the second lower interlayer insulating layer 224, and the drain electrode 227 of the second thin film transistor TR2. have.

A buffer insulating layer 110 may be positioned between the device substrate 100 and the driving circuit. The buffer insulating layer 110 may prevent contamination by the device substrate 100 in the process of forming the driving circuit. The buffer insulating layer 110 may be entirely formed on the upper surface of the device substrate 100 facing the driving circuit. For example, the buffer insulating layer 110 is positioned between the device substrate 110 and the first semiconductor pattern 211 and may extend between the device substrate 110 and the second semiconductor pattern 221. . The first semiconductor pattern 211 and the second semiconductor pattern 221 may directly contact the buffer insulating layer 110. The buffer insulating layer 110 may be in direct contact with the first gate insulating layer 212 and the second gate insulating layer 222 outside the first semiconductor pattern 211 and the second semiconductor pattern 221. .

The buffer insulating layer 110 may include an insulating material. The buffer insulating layer 110 may include an inorganic insulating material. For example, the buffer insulating layer 110 may include silicon oxide (SiO) and/or silicon nitride (SiN). The buffer insulating layer 110 may have a multi-layer structure.

An overcoat layer 130 may be positioned on the driving circuit. The overcoat layer 130 may remove a step caused by the driving circuit. For example, the surface of the overcoat layer 130 facing the device substrate 100 may be a flat plane. The device coat layer 130 may extend in an outer direction of the driving circuit. For example, the signal wires GL, DL, and PL may be covered by the overcoat layer 130.

The overcoat layer 130 may include an insulating material. For example, the overcoat layer 130 may include an organic insulating material.

In the display device according to the exemplary embodiment of the present invention, it is described that the driving circuit directly contacts the overcoat layer 130. However, the display device according to another exemplary embodiment of the present invention may include a lower passivation layer positioned between the driving circuit and the overcoat layer 130. The lower protective layer may prevent damage to the driving circuit due to external moisture and impact. The lower passivation layer may extend along the surface of the driving circuit facing the device substrate 100.

The lower protective layer may include an insulating material. The lower passivation layer 120 may include a different material from the overcoat layer 130. For example, the lower protective layer may include an inorganic insulating material such as silicon oxide (SiO) or silicon nitride (SiN).

The light emitting device 300 may be located on the overcoat layer 130. The light emitting device 300 may emit light having a specific color. For example, the light emitting device 300 may include a first electrode 310, a light emitting layer 320, and a second electrode 330 stacked in order on the overcoat layer 130.

The first electrode 310 may be positioned close to the overcoat layer 130. The first electrode 310 may be electrically connected to the driving circuit. For example, the first electrode 310 may be electrically connected to the second drain electrode 226 of the second thin film transistor TR2. The first electrode 310 may be selectively connected to the power voltage supply line PL by the second thin film transistor TR2.

The overcoat layer 130 may include an overcoat contact hole 131h exposing a portion of the driving circuit. For example, the overcoat contact hole 131h is located on the second upper interlayer insulating layer 226 and is connected to the second drain electrode 226 of the second thin film transistor TR2 250 ). Accordingly, in a display device according to an embodiment of the present invention, the degree of freedom for electrical connection between the driving circuit and the light emitting device 300 may be improved.

The first electrode 310 may include a conductive material. The first electrode 310 may have a relatively low reflectance. For example, the reflectance of the first electrode 310 may be lower than the transmittance of the first electrode 310. The first electrode 310 may include a transparent material. For example, the first electrode 310 may be a transparent electrode formed of a transparent conductive material such as ITO and IZO.

The emission layer 320 may generate light having a luminance corresponding to a voltage difference between the first electrode 310 and the second electrode 330. For example, the light emitting layer 320 may include an emission material layer (EML) including a light emitting material. The light-emitting material may be an organic material. For example, the display device according to an embodiment of the present invention may be an organic light emitting display device including an organic light emitting material.

The light emitting layer 320 may have a multi-layer structure to increase light emission efficiency. For example, the emission layer 320 may further include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL).

The second electrode 330 may include a conductive material. The second electrode 330 may be transparent. For example, the second electrode 330 may be a transparent electrode formed of a transparent conductive material such as ITO and IZO. The second electrode 330 may include a different material from the first electrode 310. For example, the second electrode 330 may include a metal such as aluminum (Al). The second electrode 330 may have a thickness thinner than that of the first electrode 310.

The light emitting device 300 positioned in each unit pixel PA may be driven independently of the light emitting device 300 positioned in the adjacent unit pixel PA. For example, the first electrode 310 of each light emitting device 300 may be spaced apart from the first electrode 310 of the adjacent light emitting device 300. The bank insulating layer 150 may be positioned in a space between adjacent first electrodes 310. Each first electrode 310 may be insulated from the adjacent first electrode 310 by the bank insulating layer 150. For example, the bank insulating layer 150 may cover the edge of each first electrode 310. The light emitting layer 320 and the second electrode 330 of the light emitting device 300 may be stacked on a portion of the first electrode 310 exposed by the bank insulating layer 150. The overcoat contact hole 131h may overlap the bank insulating layer 150. Accordingly, in the display device according to the exemplary embodiment of the present invention, a reduction in the light emitting area due to electrical connection between the driving circuit and the light emitting element 300 may be prevented.

The bank insulating layer 150 may include an insulating material. For example, the bank insulating layer 150 may include an organic insulating material. The bank insulating layer 150 may include a different material from the overcoat layer 130.

The light-emitting elements 300 positioned in each unit pixel PA may exhibit the same color as the light-emitting elements 300 of adjacent unit pixels PA. For example, the light emitting layer 320 of each light emitting device 300 may include the same material. The light emitting layer 320 of each light emitting device 300 may be connected to the light emitting layer 320 of the adjacent light emitting device 300. For example, the emission layer 320 may extend over the bank insulating layer 150. The second electrode 330 of the light emitting device 300 may extend along the light emitting layer 320 of the light emitting device 300. For example, the second electrode 330 of each light emitting device 300 may be connected to the second electrode 330 of the adjacent light emitting device 300.

An intermediate conductive layer 400 may be positioned between the overcoat layer 130 and the light emitting device 300. The intermediate conductive layer 400 may have a larger size than the first electrode 310 of the light emitting device 300. For example, the horizontal length of the intermediate conductive layer 400 in the second direction X may be greater than the horizontal length of the first electrode 310 in the second direction X. The first electrode 310 of each light emitting device 300 may be located on a portion of the intermediate conductive layer 400.

The size of the intermediate conductive layer 400 may be larger than the size of each unit pixel PA. For example, the driving circuit may overlap a portion of the intermediate conductive layer 400. The intermediate conductive layers 400 of the unit pixels PA adjacent to the first direction Y may be connected to each other. For example, the intermediate conductive layer 400 may extend in the first direction (Y). The data line DL and the power voltage supply line PL extending in the first direction Y may overlap the intermediate conductive layer 400. Accordingly, in the display device according to the exemplary embodiment of the present invention, noise blocking by the intermediate conductive layer 400 may be effectively performed. For example, in the display device according to the exemplary embodiment of the present invention, the intermediate conductive layer 400 may overlap the gate line GL intersecting between adjacent unit pixels PA in the first direction Y. have. Therefore, in the display device according to the exemplary embodiment of the present invention, an effect of noise caused by the gate line GL on the light emitting device 300 may be reduced.

The intermediate conductive layer 400 may include a conductive material. The intermediate conductive layer 400 may have a higher reflectance than the first electrode 310. For example, the intermediate conductive layer 400 may include metals such as aluminum (Al) and silver (Ag). Accordingly, in the display device according to an embodiment of the present invention, light emitted in the direction of the first electrode 310 may be reflected in the direction of the second electrode 330 by the intermediate conductive layer 400. Therefore, in the display device according to an embodiment of the present invention, light generated by the light emitting layer 320 may be emitted to the outside through the second electrode 330.

A specific voltage may be applied to the intermediate conductive layer 400. For example, a ground voltage may be applied to the intermediate conductive layer 400. Accordingly, in the display device according to the exemplary embodiment of the present invention, noise caused by the driving circuit and the signal lines GL, DL, and PL may be blocked by the intermediate conductive layer 400. That is, in the display device according to the exemplary embodiment of the present invention, the light emitting device 300 may not be affected by noise caused by the driving circuit and the signal wires GL, DL, and PL. Therefore, in the display device according to the exemplary embodiment of the present invention, malfunction of the light emitting device 300 due to the driving circuit and the signal lines GL, DL, and PL may be prevented.

The intermediate conductive layer 400 may be insulated from the light emitting device 300. For example, an intermediate insulating layer 140 may be positioned between the intermediate conductive layer 400 and the first electrode 310. The intermediate insulating layer 140 may extend outside the light emitting device 300. For example, the entire surface of the intermediate conductive layer 400 facing the light emitting device 300 may be covered by the intermediate insulating layer 140.

The intermediate insulating layer 140 may include an insulating material. The intermediate insulating layer 140 may include a different material from the overcoat layer 130. For example, the intermediate insulating layer 140 may include an inorganic insulating material. The surface of the intermediate insulating layer 140 facing the light emitting device 300 may be a flat plane. The intermediate insulating layer 140 may include a material having relatively high fluidity. For example, the intermediate insulating layer 140 may include silicon oxide (SiO).

The intermediate insulating layer 140 may include an intermediate contact hole 140h for electrically connecting the first electrode 310 to the driving circuit. The intermediate contact hole 140h may overlap the overcoat contact hole 131h. For example, the intermediate contact hole 140h may overlap a portion of the connection electrode 250. The intermediate contact hole 140h may overlap the bank insulating layer 150. The intermediate conductive layer 400 may include an intermediate through hole 400h overlapping a partial region of the driving circuit. The intermediate contact hole 140h may be located in the intermediate through hole 400h. The intermediate through hole 400h may have a larger size than the intermediate contact hole 140h. For example, a sidewall of the intermediate through hole 400h may be covered by the intermediate insulating layer 140.

An upper passivation layer 160 may be positioned on the light emitting device 300. The upper passivation layer 160 may prevent damage to the light emitting device 300 due to external moisture and impact. The upper passivation layer 160 may extend along the second electrode 330. For example, the upper passivation layer 160 may extend over the bank insulating layer 150.

The upper passivation layer 160 may include an insulating material. For example, the upper passivation layer 160 may include an inorganic insulating material such as silicon oxide (SiO) and silicon nitride (SiN). The upper passivation layer 160 may have a multi-layer structure. For example, the upper passivation layer 160 may have a structure in which an organic layer formed of an organic insulating material is positioned between inorganic layers formed of an inorganic insulating material.

An encapsulation substrate 500 may be positioned on the upper passivation layer 160. The encapsulation substrate 500 may include an insulating material. The encapsulation substrate 500 may include a transparent material. For example, the encapsulation substrate 500 may include glass or plastic. Accordingly, in the display device according to the exemplary embodiment of the present invention, an image by light emitted from the light emitting device 300 may be implemented on the outer surface of the encapsulation substrate 500. The encapsulation substrate 500 may include a different material from the device substrate 100.

A black matrix 610 and a color filter 620 may be positioned on a lower surface of the encapsulation substrate 500 facing the device substrate 100. The color filter 620 may overlap a portion of the first electrode 310 exposed by the bank insulating layer 150. The black matrix 610 may overlap the bank insulating layer 150. For example, the color filter 620 may cover the edge of the black matrix 610. Accordingly, light emitted from each light emitting device 300 may represent a color corresponding to the corresponding unit pixel PA.

An adhesive layer 700 may be positioned between the upper passivation layer 160 and the black matrix 610 and the color filter 620. The encapsulation substrate 500 on which the black matrix 610 and the color filter 620 are formed may be combined with the device substrate 100 on which the light emitting device 300 is formed by the adhesive layer 700.

As a result, the display device according to an exemplary embodiment of the present invention includes the intermediate conductive layer 400 and the intermediate insulating layer (sequentially stacked) between the overcoat layer 130 and the light emitting device 300 covering the driving circuit. 140), a specific voltage may be applied to the intermediate conductive layer 400. Accordingly, in the display device according to the exemplary embodiment of the present invention, malfunction of the light emitting device 300 due to the driving circuit and the signal lines GL, DL, and PL may be prevented. Therefore, reliability may be improved in the display device according to the exemplary embodiment of the present invention.

In the display device according to the exemplary embodiment of the present invention, it is described that the intermediate conductive layer 400 extends in the first direction Y. However, the display device according to another embodiment of the present invention may include an intermediate conductive layer 400 extending in a second direction X parallel to the gate line GL. In a display device according to another embodiment of the present invention, the horizontal length of the intermediate conductive layer 400 in the first direction Y perpendicular to the second direction X is each unit pixel in the first direction Y It may be larger than the horizontal length of (PA). Accordingly, in a display device according to another embodiment of the present invention, the degree of freedom for a specific voltage applied to the intermediate conductive layer 400 may be improved.

In the display device according to the embodiments of the present invention, it is described that the intermediate conductive layer 400 extends in one direction. However, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 positioned between the driving circuit and the light emitting device 300 is perpendicular to the first direction Y and the first direction Y. In the second direction X, the adjacent unit pixels PA may extend. That is, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 is an intermediate through hole for a contact hole in which the light emitting element 300 of each unit pixel PA is electrically connected to a corresponding driving circuit It may be a flat plate (flat plate) shape including the field (400h). Accordingly, in the display device according to another embodiment of the present invention, the process of forming the intermediate conductive layer 400h may be simplified. In addition, in the display device according to another embodiment of the present invention, noise caused by signal lines GL, DL, and PL positioned between unit pixels PA adjacent by the intermediate conductive layer 400 may be minimized. . Therefore, in the display device according to another embodiment of the present invention, malfunction of the light emitting device 300 may be effectively prevented.

In the display device according to the exemplary embodiment of the present invention, it is described that the intermediate conductive layers 400 of the unit pixels PA adjacent to the first direction Y are connected to each other. However, as illustrated in FIGS. 4 and 5, in the display device according to another embodiment of the present invention, the middle conductive layer 400 of the unit pixel PA adjacent to the middle conductive layer 400 of each unit pixel PA And can be spaced apart. That is, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 may be selectively connected to the light emitting element 300 by a driving circuit. For example, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 may be connected to the power supply voltage supply line PL in the unit pixel PA. That is, in the display device according to another embodiment of the present invention, the driving circuit may transmit a driving current to the light emitting device 300 using the power voltage transmitted through the intermediate conductive layer 400. For example, in the display device according to another embodiment of the present invention, the overcoat layer 130 includes an overcoat through hole 132h positioned between the intermediate conductive layer 400 and the power voltage supply line PL. can do. The intermediate conductive layer 400 may be connected to the power voltage supply line PL through the overcoat through hole 132h. Accordingly, in the display device according to another embodiment of the present invention, a malfunction of the light emitting device 300 may be minimized by the intermediate conductive layer 400 to which a power voltage is maintained at which a constant voltage is maintained. In addition, in the display device according to another embodiment of the present invention, noise due to a driving circuit of each unit pixel PA may not be transmitted to the adjacent unit pixel PA through the intermediate conductive layer 400. Accordingly, in a display device according to another embodiment of the present invention, the degree of freedom for electrical connection for voltage application of the intermediate conductive layer 400 may be improved.

In the display device according to the exemplary embodiment of the present invention, it is described that the intermediate conductive layer 400 is insulated from the driving circuit. However, the display device according to another embodiment of the present invention may apply a signal to the driving circuit using the intermediate conductive layer 400. That is, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 may be selectively connected to the first electrode of the light emitting element 300 by a driving circuit. For example, as illustrated in FIGS. 6 and 7, in a display device according to another embodiment of the present invention, the second source electrode 225 of the second thin film transistor TR2 may be electrically connected. That is, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 may function as a power voltage supply line PL. The overcoat layer 130 may include an overcoat through hole 132h partially exposing the second source electrode 225 of the second thin film transistor TR2. The overcoat through hole 132h may overlap the bank insulating layer 150. Accordingly, in the display device according to another embodiment of the present invention, since the power voltage supply line PL may be omitted, the structure of each unit pixel may be simplified. Therefore, in the display device according to another embodiment of the present invention, process efficiency is improved, and malfunction of the light emitting device 300 by the driving circuit can be minimized.

In the display device according to the exemplary embodiment of the present invention, it is described that the driving circuit of each unit pixel PA includes two thin film transistors TR1 and TR2 and one storage capacitor Cst. However, in the display device according to another exemplary embodiment of the present invention, each unit pixel PA may include a driving circuit having various configurations. For example, as illustrated in FIGS. 8 and 9, in the display device according to another exemplary embodiment of the present invention, each unit pixel PA includes a first gate line GL1, a second gate line GL2, and a data line. A first thin film transistor TR1 defined by (DL) and a power supply voltage supply line PL and a driving circuit located in each unit pixel PA is controlled by the first gate line GL1, the first A second thin film transistor TR2 controlled by one thin film transistor TR1, a third thin film transistor TR3 controlled by the second gate line GL2, and a gate electrode of the second thin film transistor TR2 A storage capacitor Cst positioned between the drain electrodes is included, but the intermediate conductive layer 400 may be electrically connected to the source electrode 270 of the third thin film transistor TR3. The intermediate conductive layer 400 may function as a reference voltage supply line that delivers a reference voltage for charging the storage capacitor Cst. That is, in the display device according to another embodiment of the present invention, the intermediate conductive layer 400 may be electrically connected to one electrode of the storage capacitor Cst by the third thin film transistor TR3. Accordingly, in the display device according to another embodiment of the present invention, various driving circuits are used, but the light emission by the signal wirings GL1, GL2, DL, and PL for transmitting signals to the driving circuit and the driving circuit The malfunction of the device 300 can be prevented.

100: element substrate 300: light-emitting element
400: intermediate conductive layer 500: sealing substrate
DL: Data line GL: Gate line
PL: power supply voltage supply line TR1: first thin film transistor
TR2: Second thin film transistor

Claims (15)

A driving circuit located on the element substrate;
An overcoat layer on the device substrate and covering the driving circuit;
An intermediate conductive layer located on the overcoat layer;
A light emitting device including a first electrode, a light emitting layer, and a second electrode sequentially stacked on a portion of the intermediate conductive layer; And
A display device including an intermediate insulating layer positioned between the intermediate conductive layer and the light emitting element. According to claim 1,
The reflectance of the first electrode is lower than the transmittance of the first electrode,
A display device having a reflectance of the intermediate conductive layer higher than that of the first electrode. According to claim 1,
The driving circuit is a display device including a thin film transistor that selectively connects the intermediate conductive layer and the first electrode. The method of claim 3,
A display device having a conductivity higher than that of the first conductive layer. The method of claim 3,
The intermediate conductive layer is a display device connected to a power supply voltage supply line. The method of claim 5,
A bank insulating film positioned on the intermediate insulating film and covering an edge of the first electrode is further included.
A display device overlapping the bank insulating layer has an intermediate connection hole passing through a portion of the overcoat layer positioned between the intermediate conductive layer and the power voltage supply line. According to claim 1,
The size of the intermediate conductive layer is larger than that of the first electrode. The method of claim 7,
Each of the overcoat layer and the intermediate insulating layer includes a contact hole for electrically connecting the first electrode to the driving circuit,
The intermediate conductive layer includes an intermediate through hole overlapping a partial region of the driving circuit,
The contact hole of the intermediate insulating film is located in the intermediate through hole,
The sidewall of the intermediate through hole is covered with the intermediate insulating film. A unit pixel defined by a data line extending in a first direction and a first gate line extending in a second direction perpendicular to the first direction;
A driving circuit positioned in the unit pixel and including at least one thin film transistor;
A light emitting element positioned in the unit pixel and including a first electrode electrically connected to the driving circuit; And
It is located between the driving circuit and the light emitting element, and includes an intermediate conductive layer insulated from the light emitting element,
The driving circuit is a display device overlapping a portion of the intermediate conductive layer. The method of claim 9,
An encapsulation substrate positioned on the light emitting element; And
A display device further comprising a color filter positioned on the surface of the encapsulation substrate facing the light emitting element and overlapping the light emitting element. The method of claim 9,
The intermediate conductive layer is a display device extending in the first direction. The method of claim 11,
A display device having a horizontal length of the intermediate conductive layer in the second direction is greater than a horizontal length of the unit pixels in the second direction. The method of claim 9,
Further comprising a second gate line extending in the second direction,
The driving circuit includes a first thin film transistor controlled by the first gate line, a second thin film transistor controlled by the first thin film transistor, a third thin film transistor controlled by the second gate line, and the second thin film It includes a storage capacitor located between the gate electrode and the drain electrode of the transistor,
The intermediate conductive layer is a display device electrically connected to one electrode of the storage capacitor by the third thin film transistor. The method of claim 13,
The first electrode of the light emitting device is a display device that is electrically connected to the one electrode of the storage capacitor. The method of claim 13,
A power voltage supply line extending in the first direction is further included,
The drain electrode of the second thin film transistor is a display device that is electrically connected to the power voltage supply line by the first thin film transistor.

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