KR102461243B1 - 선택적으로 결합되는 게이트 단자들을 갖는 차동 캐스코드 증폭기 - Google Patents

선택적으로 결합되는 게이트 단자들을 갖는 차동 캐스코드 증폭기 Download PDF

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KR102461243B1
KR102461243B1 KR1020167028864A KR20167028864A KR102461243B1 KR 102461243 B1 KR102461243 B1 KR 102461243B1 KR 1020167028864 A KR1020167028864 A KR 1020167028864A KR 20167028864 A KR20167028864 A KR 20167028864A KR 102461243 B1 KR102461243 B1 KR 102461243B1
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transistor
gate terminal
cascode
differential
coupled
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KR20160145592A (ko
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알렌 엔가 룽 찬
가레스 성 타이 예오
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/129—Indexing scheme relating to amplifiers there being a feedback over the complete amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45024—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are cascode coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45116—Feedback coupled to the input of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45302—Indexing scheme relating to differential amplifiers the common gate stage of a cascode dif amp being controlled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7206—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
KR1020167028864A 2014-04-22 2015-04-14 선택적으로 결합되는 게이트 단자들을 갖는 차동 캐스코드 증폭기 Active KR102461243B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/258,669 2014-04-22
US14/258,669 US10340851B2 (en) 2014-04-22 2014-04-22 Differential cascode amplifier with selectively coupled gate terminals
PCT/US2015/025770 WO2015164125A1 (en) 2014-04-22 2015-04-14 Differential cascode amplifier with selectively coupled gate terminals

Publications (2)

Publication Number Publication Date
KR20160145592A KR20160145592A (ko) 2016-12-20
KR102461243B1 true KR102461243B1 (ko) 2022-10-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167028864A Active KR102461243B1 (ko) 2014-04-22 2015-04-14 선택적으로 결합되는 게이트 단자들을 갖는 차동 캐스코드 증폭기

Country Status (7)

Country Link
US (1) US10340851B2 (enExample)
EP (1) EP3134966B1 (enExample)
JP (1) JP6509909B2 (enExample)
KR (1) KR102461243B1 (enExample)
CN (1) CN106233621B (enExample)
BR (1) BR112016024709A2 (enExample)
WO (1) WO2015164125A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9629093B2 (en) * 2015-06-24 2017-04-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Programmable transmitter circuits
US9887673B2 (en) * 2016-03-11 2018-02-06 Intel Corporation Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
US10033338B2 (en) * 2016-06-17 2018-07-24 Qualcomm Incorporated Switched inductor/transformer for dual-band low-noise amplifier (LNA)
TWI619354B (zh) * 2017-01-26 2018-03-21 瑞昱半導體股份有限公司 射頻收發裝置及其射頻發射機
KR102463983B1 (ko) 2018-12-26 2022-11-07 삼성전자 주식회사 누설 전류를 차단하기 위한 증폭기 및 상기 증폭기를 포함하는 전자 장치
US10862429B2 (en) * 2019-01-09 2020-12-08 Silanna Asia Pte Ltd Apparatus for optimized turn-off of a cascode amplifier

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW465177B (en) * 2000-07-18 2001-11-21 Pixart Imaging Inc Clamping-type regulated-cascade gain amplifier circuit
US6791372B2 (en) 2002-06-04 2004-09-14 Intel Corporation Active cascode differential latch
US7170341B2 (en) * 2003-08-05 2007-01-30 Motorola, Inc. Low power consumption adaptive power amplifier
KR100708117B1 (ko) 2004-11-11 2007-04-16 삼성전자주식회사 가변 이득 증폭기
US7358816B2 (en) 2004-11-11 2008-04-15 Samsung Electronics Co., Ltd. Variable gain amplifier
CN102106082B (zh) 2008-01-09 2014-04-02 昆天公司 具有宽动态范围的整流放大器
US8483627B2 (en) 2008-05-09 2013-07-09 Texas Instruments Incorporated Circuits, processes, devices and systems for full integration of RF front end module including RF power amplifier
JP5139963B2 (ja) * 2008-12-15 2013-02-06 ルネサスエレクトロニクス株式会社 差動増幅器
JP2010147992A (ja) 2008-12-22 2010-07-01 Toshiba Corp 増幅回路及びａ／ｄ変換器
US8229367B2 (en) 2009-04-14 2012-07-24 Qualcomm, Incorporated Low noise amplifier with combined input matching, balun, and transmit/receive switch
US7821339B1 (en) 2009-04-27 2010-10-26 Broadcom Corporation Composite differential RF power amplifier layout
EP2429075A1 (en) 2010-09-13 2012-03-14 Imec Amplifier circuit for a ranging transceiver
US9306502B2 (en) 2011-05-09 2016-04-05 Qualcomm Incorporated System providing switchable impedance transformer matching for power amplifiers
US8624632B2 (en) 2012-03-29 2014-01-07 International Business Machines Corporation Sense amplifier-type latch circuits with static bias current for enhanced operating frequency
GB2509777B (en) * 2013-01-15 2016-03-16 Broadcom Corp An apparatus for a radio frequency integrated circuit

Also Published As

Publication number Publication date
JP6509909B2 (ja) 2019-05-08
WO2015164125A1 (en) 2015-10-29
US10340851B2 (en) 2019-07-02
BR112016024709A2 (pt) 2017-08-15
CN106233621A (zh) 2016-12-14
US20150303876A1 (en) 2015-10-22
EP3134966B1 (en) 2018-08-29
JP2017514395A (ja) 2017-06-01
KR20160145592A (ko) 2016-12-20
EP3134966A1 (en) 2017-03-01
CN106233621B (zh) 2019-12-20

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