KR102442302B1 - Radio frequency module and communication device - Google Patents

Abstract

The high-frequency module 1A includes a module board 91 having main surfaces 91a and 91b facing each other, transmission input terminals 111 and 112, and transmission input terminals 111 or 112 for amplifying a transmission signal input. A post-stage amplifier 11b, and a switch 54 for switching the connection and disconnection between the transmission input terminals 111 and 112 and the post-stage amplifier 11b, the post-stage amplifier 11b is disposed on the main surface 91a, and the switch 54 is arranged on the main surface 91b.

Description

High-frequency module and communication device {RADIO FREQUENCY MODULE AND COMMUNICATION DEVICE}

The present invention relates to a high-frequency module and a communication device.

In mobile communication devices such as mobile phones, especially with the progress of multi-band, the arrangement of circuit elements constituting the high-frequency front-end circuit is complicated.

Patent Document 1 discloses a configuration of a front-end circuit having two transmission power amplifiers in order to perform transmission in a plurality of communication bands (frequency bands). On the input side of the two transmit power amplifiers, a switch for switching to which of the two transmit power amplifiers the transmit signals from the two transceiver circuits is input is arranged. According to this, the two transmission signals output from the two transceiver circuits can be transmitted with high isolation from the two antennas via the front-end circuit.

US Patent Application Publication No. 2018/0131501 Specification

However, when the front-end circuit disclosed in Patent Document 1 is configured as a small front-end circuit in one module, the signal path on the input side of the transmission power amplifier and the signal path on the output side of the transmission power amplifier are close to each other, so that the two It is assumed that the isolation of the signal path deteriorates. When the isolation of the signal path on the input side and the signal path on the output side of the transmission power amplifier deteriorates, an unnecessary high-frequency signal feedback loop is formed between the input and output of the transmission power amplifier. In this case, there arises a problem that the transmission power amplifier oscillates under a predetermined condition and the operation of the transmission power amplifier becomes unstable.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a high-frequency module and a communication device in which unstable operation of a transmission power amplifier is suppressed.

In order to achieve the above object, a high-frequency module according to an aspect of the present invention includes a module substrate having a first main surface and a second main surface opposite to each other, a transmit input terminal, and amplify a transmit signal input from the transmit input terminal. a first transmission amplifier; and a switch for switching connection and disconnection between the transmission input terminal and the first transmission amplifier, wherein the first transmission amplifier is disposed on the first main surface, and the switch is the second It is placed on the main surface.

ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the high frequency module and communication apparatus in which the unstable operation|movement of a transmission power amplifier was suppressed.

1A is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.
1B is a circuit configuration diagram of a high-frequency module and a communication device according to a modification of the embodiment.
2A is a schematic plan view of the high-frequency module according to the first embodiment.
2B is a schematic cross-sectional configuration diagram of the high-frequency module according to the first embodiment.
2C is a schematic cross-sectional configuration diagram of a high-frequency module according to a second embodiment.
3A is a schematic plan view of the high-frequency module according to the third embodiment.
3B is a schematic cross-sectional configuration diagram of a high-frequency module according to a third embodiment.
4A is a schematic plan view of the high-frequency module according to the fourth embodiment.
4B is a schematic cross-sectional configuration diagram of a high-frequency module according to a fourth embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail. In addition, embodiment described below shows a generic or specific example. In addition, the numerical value, shape, material, component, arrangement|positioning, connection form, etc. of a component shown in the following embodiment, an Example, and a modification are an example, and are not a note which limits this invention. In addition, components that are not described in the independent claims among components in the following embodiments and modifications are described as arbitrary components. In addition, the sizes of the components shown in the drawings or the ratio of sizes are not necessarily strict. In each drawing, the same code|symbol is attached|subjected about substantially the same structure, and overlapping description may be abbreviate|omitted or simplified.

In addition, in the following, terms indicating the relationship between elements such as parallel and perpendicular, terms indicating the shape of elements such as rectangular shape, and numerical ranges do not represent only strict meanings, but substantially equivalent ranges, examples For example, it means to include a difference of several percent.

In addition, in the following, in A, B, and C mounted on a board|substrate, in the planar view of a board|substrate (or the main surface of a board|substrate), C is arrange|positioned between A and B" in the plane view of a board|substrate. In this case, it means that a straight line connecting any point in A and any point in B passes through the region of C. In addition, when viewed from the plane of the substrate refers to viewing the substrate and circuit elements mounted on the substrate by orthographic projection on a plane parallel to the substrate.

Hereinafter, "transmission path" means a transmission line composed of a wiring through which a high-frequency transmission signal propagates, an electrode directly connected to the wiring, and a terminal directly connected to the wiring or the electrode. In addition, the "reception path" means a transmission line composed of a wiring through which a high-frequency reception signal propagates, an electrode directly connected to the wiring, and a terminal directly connected to the wiring or the electrode.

In addition, in the following, "A and B are connected" applies not only to the case where A and B are physically connected, but also applies to the case where A and B are electrically connected.

(Embodiment)

[One. Circuit configuration of high frequency module (1A) and communication device (5A)]

1A is a circuit configuration diagram of a high-frequency module 1A and a communication device 5A according to an embodiment. As shown in the figure, the communication device 5A includes a high-frequency module 1A, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4 . do.

The RFIC 3 is an RF signal processing circuit that processes a high-frequency signal transmitted and received by the antenna 2 . Specifically, the RFIC 3 processes the received signal input through the reception path of the high frequency module 1A by down-converting or the like, and outputs the received signal generated by the signal processing to the BBIC 4 . Further, the RFIC 3 processes the transmission signal input from the BBIC 4 by up-converting or the like, and outputs the transmission signal generated by the signal processing to the transmission path of the high frequency module 1A.

The BBIC 4 is a circuit that performs signal processing using an intermediate frequency band of a lower frequency than the high frequency signal transmitted by the high frequency module 1A. The signal processed by the BBIC 4 is used, for example, as an image signal for image display, or as an audio signal for a call through a speaker.

Further, the RFIC 3 has a function as a control unit for controlling the connection of the switches 51, 52, 53 and 54 of the high frequency module 1A based on the communication band (frequency band) used. Specifically, the RFIC 3 switches the connection of the switches 51 to 54 included in the high frequency module 1A by a control signal (not shown). Moreover, the control part may be formed outside the RFIC 3, and may be formed in the high frequency module 1A or the BBIC 4, for example.

The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1A, radiates the high-frequency signal output from the high-frequency module 1A, and receives the high-frequency signal from the outside, and the high-frequency module 1A output to

In addition, in the communication device 5A according to the present embodiment, the antenna 2 and the BBIC 4 are not essential components.

Next, the detailed configuration of the high frequency module 1A will be described.

As shown in Fig. 1A, the high frequency module 1A includes an antenna connection terminal 100, transmission input terminals 111 and 112, a reception output terminal 120, a transmission power amplifier 11, a reception low noise amplifier ( 21), transmission filters 61T and 62T, reception filters 61R and 62R, matching circuits 31 and 41, and switches 51, 52, 53 and 54.

The antenna connection terminal 100 is an antenna common terminal connected to the antenna 2 .

The transmission power amplifier 11 has a front-end amplifier 11a and a post-stage amplifier 11b, and a communication band A (first communication band) and a communication band B (second communication) input from the transmission input terminals 111 and 112. It is an amplifier that amplifies the transmit signal of the band).

The post-stage amplifier 11b is an example of the first transmission amplifier, and the input terminal is connected to the output terminal of the front-stage amplifier 11a, and the output terminal is connected to the matching circuit 31 .

The front-stage amplifier 11a is an example of the second transmission amplifier, and an input terminal is connected to the switch 54, and an output terminal is connected to the input terminal of the rear-stage amplifier 11b. That is, the front-end amplifier 11a and the post-stage amplifier 11b are cascaded.

In addition, the transmission power amplifier 11 may not be comprised with the cascade-connected front-stage amplifier 11a and the post-stage amplifier 11b, it may be comprised with one stage of an amplifier, and may be comprised with three or more stages of amplifiers.

The reception low-noise amplifier 21 is a reception amplifier that amplifies the high-frequency signals of the communication bands A and B to low noise and outputs them to the reception output terminal 120 .

The transmission filter 61T is disposed on a transmission path connecting the transmission power amplifier 11 and the antenna connection terminal 100 , and transmits a transmission signal of a transmission band of the communication band A among the transmission signals amplified by the transmission power amplifier 11 . pass through In addition, the transmission filter 62T is disposed in a transmission path connecting the transmission power amplifier 11 and the antenna connection terminal 100, and among the transmission signals amplified by the transmission power amplifier 11, the transmission band of the communication band B is transmitted. pass the signal

The reception filter 61R is disposed in a reception path connecting the reception low noise amplifier 21 and the antenna connection terminal 100, and among reception signals input from the antenna connection terminal 100, a reception signal of the reception band of the communication band A pass through In addition, the reception filter 62R is disposed in a reception path connecting the reception low noise amplifier 21 and the antenna connection terminal 100 , and among reception signals input from the antenna connection terminal 100 , the reception of the reception band of the communication band B is received. pass the signal

The transmission filter 61T and the reception filter 61R constitute a duplexer 61 having the communication band A as a pass band. Further, the transmission filter 62T and the reception filter 62R constitute a duplexer 62 having the communication band B as a pass band.

The matching circuit 31 is disposed in a transmission path connecting the transmission power amplifier 11 and the transmission filters 61T and 62T, and performs impedance matching between the transmission power amplifier 11 and the transmission filters 61T and 62T.

The matching circuit 41 is disposed in a receiving path connecting the receiving low noise amplifier 21 and the receiving filters 61R and 62R, and takes impedance matching of the receiving low noise amplifier 21 and the receiving filters 61R and 62R.

The switch 54 has a common terminal and two select terminals. The common terminal of the switch 54 is connected to the input terminal of the pre-amplifier 11a. One selection terminal of the switch 54 is connected to the transmission input terminal 111 , and the other selection terminal of the switch 54 is connected to the transmission input terminal 112 . In this connection configuration, the switch 54 switches the connection between the common terminal and one selection terminal, and the connection between the common terminal and the other selection terminal. That is, the switch 54 switches the connection and disconnection of the transmission input terminals 111 and 112 and the transmission power amplifier 11 . The switch 54 is constituted of, for example, an SPDT (Single Pole Double Throw) type switch circuit.

Moreover, the transmission signal of the communication band A is input from the transmission input terminal 111, the transmission signal of the communication band B is inputted from the transmission input terminal 112, for example.

Further, from the transmission input terminal 111, for example, a transmission signal of a communication band A or B in the fourth generation mobile communication system 4G is input, and from the transmission input terminal 112, for example, The transmission signal of the communication band A or B in the 5th generation mobile communication system 5G may be input.

The switch 51 has a common terminal and two select terminals. The common terminal of the switch 51 is connected to the output terminal of the transmission power amplifier 11 via a matching circuit 31 . One selection terminal of the switch 51 is connected to the transmission filter 61T, and the other selection terminal of the switch 51 is connected to the transmission filter 62T. In this connection structure, the switch 51 switches the connection of a common terminal and one selection terminal, and the connection of a common terminal and the other selection terminal. That is, the switch 51 connects the transmission path for transmitting the transmission signal of the communication band A to the transmission power amplifier 11, and the transmission path for transmitting the transmission signal of the communication band B and the connection between the transmission power amplifier 11 switch the The switch 51 is constituted by, for example, an SPDT type switch circuit.

The switch 52 has a common terminal and two select terminals. The common terminal of the switch 52 is connected to the input terminal of the reception low-noise amplifier 21 via a matching circuit 41 . One selection terminal of the switch 52 is connected to the reception filter 61R, and the other selection terminal of the switch 52 is connected to the reception filter 62R. In this connection structure, the switch 52 switches the connection of a common terminal and one selection terminal, and the connection of a common terminal and the other selection terminal. That is, the switch 52 connects the reception low-noise amplifier 21 and the reception path for transmitting the reception signal of the communication band A, and the connection between the reception low-noise amplifier 21 and the reception path through which the reception signal of the communication band B is transmitted. switch the The switch 52 is constituted by, for example, an SPDT type switch circuit.

The switch 53 is an example of an antenna switch and is connected to the antenna connection terminal 100, (1) connection of the antenna connection terminal 100 and a signal path for transmitting the transmission signal and reception signal of the communication band A, and ( 2) The connection between the antenna connection terminal 100 and the signal path for transmitting the transmission signal and the reception signal of the communication band B is switched. Further, the switch 53 may be a multi-connection type switch circuit capable of simultaneously performing the above (1) and (2).

Further, a multiplexer may be disposed between the switch 53 and the antenna connection terminal 100 . Further, a matching circuit may be disposed between the switch 53 and the duplexer 61 and between the switch 53 and the duplexer 62 .

The transmission filters 61T and 62T and the reception filters 61R and 62R are, for example, an acoustic wave filter using SAW (Surface Acoustic Wave), an acoustic wave filter using BAW (Bulk Acoustic Wave), an LC resonance filter, and a dielectric. Any of the filters may be sufficient, and it is not limited to these.

In addition, the transmit power amplifier 11 and the receive low noise amplifier 21 are, for example, a Si-based complementary metal oxide semiconductor (CMOS) or a field effect transistor (FET) or heterobipolar transistor (HBT) made of GaAs as a material. ) and so on.

In addition, the reception low-noise amplifier 21 and the switches 52 and 53 may be formed in one semiconductor IC (Integrated Circuit). Further, the semiconductor IC may further include a transmit power amplifier 11 and switches 51 and 54 . A semiconductor IC is comprised by CMOS, for example. Specifically, it is formed by an SOI (Silicon On Insulator) process. Thereby, it becomes possible to manufacture a semiconductor IC cheaply. In addition, the semiconductor IC may be comprised by at least any one of GaAs, SiGe, and GaN. This makes it possible to output a high-frequency signal having high-quality amplification performance and noise performance.

In the configuration of the high-frequency module 1A described above, the switch 54, the transmission power amplifier 11, the matching circuit 31, the switch 51, the transmission filter 61T, and the switch 53 are the antenna connection terminals. A first transmission circuit for transmitting the transmission signal of the communication band A toward (100) is constituted. In addition, the switch 53, the reception filter 61R, the switch 52, the matching circuit 41, and the reception low-noise amplifier 21 receive the communication band A from the antenna 2 through the antenna connection terminal 100. A first receiving circuit for transmitting a signal is configured.

In addition, the switch 54 , the transmit power amplifier 11 , the matching circuit 31 , the switch 51 , the transmit filter 62T, and the switch 53 transmit the communication band B toward the antenna connection terminal 100 . A second transmission circuit for transmitting a signal is configured. In addition, the switch 53, the reception filter 62R, the switch 52, the matching circuit 41, and the reception low-noise amplifier 21 receive the communication band B from the antenna 2 through the antenna connection terminal 100. A second receiving circuit for transmitting a signal is configured.

According to the above circuit configuration, the high-frequency module 1A can transmit, receive, or transmit/receive either the high-frequency signal of the communication band A or the high-frequency signal of the communication band B independently. Moreover, the high frequency module 1A can also perform the high frequency signal of the communication band A and the high frequency signal of the communication band B by at least any one of simultaneous transmission, simultaneous reception, and simultaneous transmission/reception.

Further, in the high-frequency module according to the present invention, the two transmitting circuits and the two receiving circuits may not be connected to the antenna connection terminal 100 through the switch 53, and the two transmitting circuits and the two receiving circuits may not be connected to each other. The circuit may be connected to the antenna 2 via other terminals. Further, the high-frequency module according to the present invention may have at least a first transmission circuit.

Further, in the high-frequency module according to the present invention, the first transmission circuit may have a post-stage amplifier (11b) and a switch (54).

[2. Circuit configuration of high-frequency module 1B and communication device 5B according to the modified example]

Fig. 1B is a circuit configuration diagram of a high-frequency module 1B and a communication device 5B according to a modification of the embodiment. As shown in the figure, the communication device 5B includes a high frequency module 1B, an antenna 2 , an RFIC 3 , and a BBIC 4 . The communication device 5B according to the present modified example differs from the communication device 5A according to the embodiment only in the configuration of the high frequency module 1B. Hereinafter, the description of the antenna 2, the RFIC 3, and the BBIC 4 is omitted, and the configuration of the high frequency module 1B will be described.

As shown in FIG. 1B , the high frequency module 1B includes an antenna connection terminal 100 , a transmission input terminal 110 , a reception output terminal 120 , transmission power amplifiers 12 and 13 , and a reception low noise amplifier ( 21), transmission filters 61T and 62T, reception filters 61R and 62R, matching circuits 31, 32 and 41, and switches 52, 53 and 55. The high-frequency module 1B according to the present modified example differs in the configuration of the transmission circuit from the high-frequency module 1A according to the embodiment. Hereinafter, about the high frequency module 1B which concerns on this modification, the point similar to the high frequency module 1A which concerns on embodiment abbreviate|omits description, and it demonstrates centering around the other point.

The transmission power amplifier 12 is an amplifier which has a front-end amplifier 12a and a downstream-stage amplifier 12b, and amplifies the transmission signal of the communication band A (first communication band) input from the transmission input terminal 110 .

The post-stage amplifier 12b is an example of the first transmission amplifier, and the input terminal is connected to the output terminal of the front-stage amplifier 12a, and the output terminal is connected to the matching circuit 31 .

The front-stage amplifier 12a is an example of the second transmission amplifier, and an input terminal is connected to the switch 55, and an output terminal is connected to the input terminal of the rear-stage amplifier 12b. That is, the front-end amplifier 12a and the post-stage amplifier 12b are cascaded.

In addition, the transmission power amplifier 12 may not be comprised with the cascading pre-amplifier 12a and the post-stage amplifier 12b, it may be comprised with a single amplifier, and may be comprised with 3 or more stages of amplifiers.

The transmission power amplifier 13 is an amplifier which has a front-end amplifier 13a and a downstream-stage amplifier 13b, and amplifies the transmission signal of the communication band B (second communication band) input from the transmission input terminal 110 .

The post-stage amplifier 13b is an example of the third transmission amplifier, and the input terminal is connected to the output terminal of the front-stage amplifier 13a, and the output terminal is connected to the matching circuit 32 .

The front-stage amplifier 13a is an example of the fourth transmission amplifier, and an input terminal is connected to the switch 55, and an output terminal is connected to the input terminal of the rear-stage amplifier 13b. That is, the front-end amplifier 13a and the post-stage amplifier 13b are cascaded.

In addition, the transmit power amplifier 13 may not be constituted by the cascading pre-amplifier 13a and the post-stage amplifier 13b, may be constituted by a single amplifier, or may be constituted by three or more stages of amplifiers.

The transmission filter 61T is disposed on a transmission path connecting the transmission power amplifier 12 and the antenna connection terminal 100 and passes the transmission signal of the transmission band of the communication band A amplified by the transmission power amplifier 12 . In addition, the transmission filter 62T is disposed in the transmission path connecting the transmission power amplifier 13 and the antenna connection terminal 100, and passes the transmission signal of the transmission band of the communication band B amplified by the transmission power amplifier 13. make it

The matching circuit 31 is disposed in a transmission path connecting the transmission power amplifier 12 and the transmission filter 61T, and performs impedance matching between the transmission power amplifier 12 and the transmission filter 61T. The matching circuit 32 is disposed in a transmission path connecting the transmission power amplifier 13 and the transmission filter 62T, and performs impedance matching between the transmission power amplifier 13 and the transmission filter 62T.

The switch 55 has a common terminal and two select terminals. The common terminal of the switch 55 is connected to the transmit input terminal 110 . One selection terminal of the switch 55 is connected to the input terminal of the pre-amplifier 12a. The other selection terminal of the switch 55 is connected to the input terminal of the pre-amplifier 13a. In this connection structure, the switch 55 switches the connection of a common terminal and one selection terminal, and the connection of a common terminal and the other selection terminal. That is, the switch 55 switches the connection and disconnection of the transmission input terminal 110 and the transmission power amplifiers 12 and 13 . The switch 55 is constituted by, for example, an SPDT type switch circuit.

Moreover, the transmission signals of the communication band A and the communication band B are input from the transmission input terminal 110, for example.

Moreover, the transmission signal of the communication band A in 4G and the transmission signal of the communication band B in 5G may be input from the transmission input terminal 110, for example.

In addition, the switch 55 may be comprised by the DPDT (Double Pole Double Throw) type|mold switch circuit which has two common terminals and two selection terminals. In this case, the high frequency module 1B has two transmission input terminals 111 and 112 , the transmission input terminal 111 is connected to one common terminal of the switch 55 , and the transmission input terminal 112 is a switch (55) is connected to the other common terminal. In this connection configuration, the switch 55 switches the connection of the one common terminal and the one selection terminal and the connection of the one common terminal and the other selection terminal, and furthermore, the other common terminal and the selection terminal are switched. The connection of the terminals and the connection of the other common terminal and the other selection terminal are switched. That is, the switch 55 switches the connection and disconnection of the transmission input terminals 111 and 112 and the transmission power amplifiers 12 and 13 . In this case, for example, the transmission signal of the communication band A is input from the transmission input terminal 111, and the transmission signal of the communication band B is inputted from the transmission input terminal 112, for example.

Moreover, for example, the transmission signal of the communication band A and communication band B in 4G is input from the transmission input terminal 111, and the communication band A in 5G and the communication band B in 5G are input from the transmission input terminal 112. A transmission signal may be input.

Further, the transmit power amplifiers 12 and 13 and the receive low-noise amplifier 21 are constituted of, for example, Si-based CMOS or FETs or HBTs made of GaAs.

In the configuration of the high-frequency module 1B described above, the switch 55 , the transmission power amplifier 12 , the matching circuit 31 , the transmission filter 61T, and the switch 53 are directed toward the antenna connection terminal 100 . A first transmission circuit for transmitting the transmission signal of the communication band A is constituted. In addition, the switch 53, the reception filter 61R, the switch 52, the matching circuit 41, and the reception low-noise amplifier 21 receive the communication band A from the antenna 2 through the antenna connection terminal 100. A first receiving circuit for transmitting a signal is configured.

In addition, the switch 55, the transmission power amplifier 13, the matching circuit 32, the transmission filter 62T, and the switch 53 are the first devices for transmitting the transmission signal of the communication band B toward the antenna connection terminal 100. 2 Configure the transmission circuit. In addition, the switch 53, the reception filter 62R, the switch 52, the matching circuit 41, and the reception low-noise amplifier 21 receive the communication band B from the antenna 2 through the antenna connection terminal 100. A second receiving circuit for transmitting a signal is configured.

According to the above circuit configuration, the high-frequency module 1B can transmit, receive, or transmit/receive either the high-frequency signal of the communication band A or the high-frequency signal of the communication band B independently. Moreover, the high frequency module 1B can also perform the high frequency signal of the communication band A and the high frequency signal of the communication band B by at least any one of simultaneous transmission, simultaneous reception, and simultaneous transmission/reception.

[3. miniaturization of high-frequency modules (1A and 1B)]

Here, when each circuit element constituting the high-frequency module 1A or 1B is mounted on one module board as a small front-end circuit, it is necessary to reduce the circuit component layout area on the surface of the module board. In this case, it is assumed that the isolation of the two signal paths deteriorates due to the proximity of the signal path on the input side of the transmission power amplifier and the signal path on the output side of the transmission power amplifier. When the isolation between the signal path on the input side and the signal path on the output side of the transmission power amplifier deteriorates, an unnecessary high-frequency signal feedback loop is formed between the input and output of the transmission power amplifier by the two signal paths. In this case, there arises a problem that the transmission power amplifier oscillates under a predetermined condition and the operation of the transmission power amplifier becomes unstable.

In contrast, in the high-frequency modules 1A and 1B, the signal path on the input side and the signal path on the output side of the transmission power amplifier are configured to suppress electric field coupling, magnetic field coupling, or electromagnetic field coupling. Hereinafter, a configuration for improving the isolation between the input/output of the transmission power amplifier in the high-frequency module 1A according to the embodiment and the high-frequency module 1B according to the modification will be described.

[4. Circuit element arrangement configuration of high frequency module 1A according to Embodiment 1]

Fig. 2A is a schematic plan view of the high-frequency module 1A according to the first embodiment. 2B is a schematic cross-sectional configuration diagram of the high-frequency module 1A according to the first embodiment, specifically, a cross-sectional view taken along the line IIB-IIB in FIG. 2A . Also, FIG. 2A (a) shows the arrangement of circuit elements when the main surface 91a of the main surfaces 91a and 91b facing each other of the module substrate 91 is viewed from the positive z-axis side. On the other hand, FIG. 2A (b) shows a perspective view of the arrangement of circuit elements when the main surface 91b is viewed from the positive z-axis side.

The high-frequency module 1A according to the embodiment specifically shows the arrangement configuration of each circuit element constituting the high-frequency module 1A according to the embodiment shown in Fig. 1A.

As shown in Figs. 2A and 2B, the high-frequency module 1A according to the present embodiment has, in addition to the circuit configuration shown in Fig. 1A, a module substrate 91, resin members 92 and 93, an external It has a connection terminal 150 .

The module substrate 91 has a main surface 91a (first main surface) and a main surface 91b (second main surface) opposite to each other, and is a substrate on which the transmitting circuit and the receiving circuit are mounted. As the module substrate 91, for example, a low temperature co-fired ceramics (LTCC) substrate having a laminate structure of a plurality of dielectric layers, a high temperature co-fired ceramics (HTCC) substrate, A component-embedded board, a board having a redistribution layer (RDL), a printed board, or the like is used.

The resin member 92 is disposed on the main surface 91a of the module substrate 91, and covers a part of the transmission circuit, a part of the reception circuit, and the main surface 91a of the module substrate 91, and the transmission circuit and a function of securing reliability such as mechanical strength and moisture resistance of circuit elements constituting the receiving circuit. The resin member 93 is disposed on the main surface 91b of the module substrate 91 and covers a part of the transmission circuit, a part of the reception circuit, and the main surface 91b of the module substrate 91, and the transmission circuit and a function of securing reliability such as mechanical strength and moisture resistance of circuit elements constituting the receiving circuit. In addition, the resin members 92 and 93 are not essential components of the high-frequency module according to the present invention.

2A and 2B, in the high frequency module 1A according to the present embodiment, the transmission power amplifier 11, the duplexers 61 and 62, and the matching circuits 31 and 41 are the main surface ( 91a) is surface mounted. On the other hand, the reception low-noise amplifier 21 and the switches 51 , 52 , 53 and 54 are surface mounted on the main surface 91b of the module substrate 91 .

In this embodiment, the rear stage amplifier 11b (first transmission amplifier) is mounted on the main surface 91a. On the other hand, the switch 54 is mounted on the main surface 91b.

According to the above configuration, the post-stage amplifier 11b is arranged on the main surface 91a of the module substrate 91 and the switch 54 is arranged on the main surface 91b. That is, the rear stage amplifier 11b and the switch 54 are disposed with the module substrate 91 interposed therebetween. Thereby, the switch 54 disposed on the input side of the transmission power amplifier 11 and the output wiring of the post-stage amplifier 11b disposed on the output side of the transmission power amplifier 11 are field coupled, magnetic field coupled, or electromagnetic field coupled. can be restrained For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmission power amplifier 11, and oscillation of the transmission power amplifier 11 can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 11 .

In addition, it is preferable that the module substrate 91 has a multilayer structure in which a plurality of dielectric layers are stacked, and a ground electrode pattern 93G is formed on at least one of the plurality of dielectric layers. Thereby, the electromagnetic field shielding function of the module substrate 91 is improved, and the isolation of the circuit element arrange|positioned on the main surface 91a and the circuit element arrange|positioned on the main surface 91b improves.

In addition, in the high-frequency module 1A according to the present embodiment, the front-end amplifier 11a is mounted on the main surface 91a. That is, the front-end amplifier 11a and the switch 54 are disposed with the module substrate 91 interposed therebetween. Thereby, it is possible to suppress electric field coupling, magnetic field coupling, or electromagnetic field coupling between the switch 54 disposed on the input side of the transmission power amplifier 11 and the output wiring of the front stage amplifier 11a. For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the front-end amplifier 11a, and oscillation of the front-end amplifier 11a can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 11 .

In addition, in the high frequency module 1A according to the present embodiment, the rear stage amplifier 11b and the switch 54 may be arranged separately on the main surfaces 91a and 91b of the module board 91, and the other circuit components are It may be arrange|positioned on either of the main surfaces 91a and 91b, and may be incorporated in the module board|substrate 91.

Further, in the high-frequency module 1A according to the present embodiment, when the module substrate 91 is viewed in a plan view, it is preferable that the front-end amplifier 11a and the switch 54 overlap.

According to this, the front-end amplifier 11a and the switch 54 can be connected via the via conductor formed in the module substrate 91 along the direction perpendicular to the main surfaces 91a and 91b (z-axis direction). Therefore, since the connecting wiring between the front-stage amplifier 11a and the switch 54 can be shortened, the transmission loss of the transmission signal can be reduced.

The matching circuits 31 and 41 are mounted on the main surface 91a of the module substrate 91 . Each of the matching circuits 31 and 41 includes an inductor. The inductors included in the matching circuits 31 and 41 are formed of, for example, chip-shaped inductors or wiring patterns formed on the main surface 91a.

According to this, the matching circuit 31 is arranged on the main surface 91a of the module substrate 91 and the switch 54 is arranged on the main surface 91b. That is, the inductor of the matching circuit 31 and the switch 54 are disposed with the module substrate 91 interposed therebetween. Thereby, it is possible to suppress magnetic field coupling or electromagnetic field coupling between the switch 54 disposed on the input side of the transmission power amplifier 11 and the inductor of the matching circuit 31 disposed on the output side of the transmission power amplifier 11 . . For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmit power amplifier 11, and oscillation of the transmit power amplifier 11 can be further suppressed. Accordingly, it becomes possible to further suppress the unstable operation of the transmission power amplifier 11 .

In addition, in the high frequency module 1A according to the present embodiment, a plurality of external connection terminals 150 are disposed on the main surface 91b side of the module substrate 91 . The high frequency module 1A transmits and receives electric signals to and from an external substrate disposed on the negative z-axis side of the high frequency module 1A via a plurality of external connection terminals 150 . Also, some of the plurality of external connection terminals 150 are set to the ground potential of the external substrate.

In addition, in the high frequency module 1A according to the present embodiment, the transmission power amplifier 11 is mounted on the main surface 91a.

The transmission power amplifier 11 is a component having a large amount of heat among circuit components included in the high-frequency module 1A. In order to improve the heat dissipation property of the high frequency module 1A, it is important to dissipate heat from the transmission power amplifier 11 to the external substrate through a heat dissipation path having a small heat resistance. If the transmit power amplifier 11 is mounted on the main surface 91b, electrode wirings connected to the transmit power amplifier 11 are disposed on the main surface 91b. For this reason, as a heat dissipation path, the heat dissipation path via only the planar wiring pattern (along the xy plane direction) on the main surface 91b is included. Since the planar wiring pattern is formed of a metal thin film, thermal resistance is high. For this reason, when the transmission power amplifier 11 is arrange|positioned on the main surface 91b, heat dissipation will fall.

On the other hand, when the transmit power amplifier 11 is mounted on the main surface 91a, the transmit power amplifier 11 and the external connection terminal 150 through a through electrode penetrating between the main surface 91a and the main surface 91b. can be connected to Accordingly, as a heat dissipation path of the transmit power amplifier 11 , a heat dissipation path through only a planar wiring pattern along the xy plane direction having high thermal resistance among wirings in the module substrate 91 can be excluded. Accordingly, it becomes possible to provide a compact high-frequency module 1A with improved heat dissipation from the transmission power amplifier 11 to the external substrate.

Further, from the viewpoint of heat dissipation, the through electrode or the heat dissipation member is preferably disposed in the region of the main surface 91b opposite to the region of the main surface 91a in which the rear stage amplifier 11b is disposed. It is preferable that the is not arranged.

In addition, in the high-frequency module 1A according to the present embodiment, the reception low-noise amplifier 21 is disposed on the main surface 91b.

According to this, since the transmission power amplifier 11 and the reception low-noise amplifier 21 are disposed with the module substrate 91 interposed therebetween, it becomes possible to improve the isolation between transmission and reception.

In addition, among the main surfaces 91a and 91b, on the main surface 91b opposite to the external substrate, the transmission power amplifier 11, which is difficult to reduce the multiplication ratio, is not disposed, and the reception low noise amplifier 21 which is easy to reduce the multiplication ratio, and a switch ( 51 to 54), it becomes possible to reduce the overall height of the high-frequency module 1A. In addition, since a plurality of external connection terminals 150 applied as a ground electrode are disposed around the reception low-noise amplifier 21 which greatly affects the reception sensitivity of the reception circuit, deterioration of the reception sensitivity of the reception circuit can be suppressed. .

Also, as shown in Figs. 2A and 2B, the reception low-noise amplifier 21 and the switches 52 and 53 may be incorporated in one semiconductor IC 20. As shown in Figs. Thereby, the height of the z-axis direction on the side of the main surface 91b can be reduced, and the component mounting area of the main surface 91b can be made small. Therefore, the high frequency module 1A can be downsized. Further, the semiconductor IC 20 may include switches 51 and 54 .

In addition, the external connection terminal 150 may be a columnar electrode penetrating the resin member 93 in the z-axis direction as shown in Figs. 2A and 2B, and further, as shown in Fig. 2C, formed on the main surface 91b. The bump electrode 160 may be used. As shown in FIG. 2C , when the external connection terminal 150 is the bump electrode 160 , the resin member 93 is not disposed on the main surface 91b.

In addition, the external connection terminal 150 may be arrange|positioned on the main surface 91a.

[5. Circuit element arrangement configuration of the high-frequency module 1B according to the third embodiment]

3A is a schematic plan view of the high-frequency module 1B according to the third embodiment. Fig. 3B is a schematic cross-sectional configuration of the high-frequency module 1B according to the third embodiment, specifically, a cross-sectional view taken along the line IIIB-IIIB in Fig. 3A. Fig. 3A (a) shows the arrangement of circuit elements when the main surface 91a of the main surfaces 91a and 91b facing each other of the module substrate 91 is viewed from the positive z-axis side. On the other hand, Fig. 3A (b) shows a perspective view of the arrangement of circuit elements when the main surface 91b is viewed from the positive z-axis side.

The high-frequency module 1B according to the third embodiment specifically shows the arrangement of each circuit element constituting the high-frequency module 1B according to a modification of the embodiment shown in Fig. 1B.

The high-frequency module 1B according to the present embodiment has two transmission power amplifiers 12 and 13, and two matching circuits 31 and 32, as compared with the high-frequency module 1A according to the first embodiment, the module substrate ( 91) is different. Hereinafter, with respect to the high frequency module 1B according to the present embodiment, the same points as those of the high frequency module 1A according to the first embodiment will be omitted, and different points will be mainly described.

The module substrate 91 has a main surface 91a (second main surface) and a main surface 91b (first main surface) opposite to each other, and is a substrate on which the transmitting circuit and the receiving circuit are mounted. As the module substrate 91, for example, an LTCC substrate, an HTCC substrate, a component-embedded substrate, a substrate having RDL, or a printed circuit board having a laminated structure of a plurality of dielectric layers is used.

3A and 3B, in the high frequency module 1B according to the present embodiment, the transmit power amplifier 13, the duplexers 61 and 62, the matching circuits 31, 32, 41, and the switch 55 are It is surface mounted on the main surface 91a of the module substrate 91 . On the other hand, the transmit power amplifier 12 , the receive low noise amplifier 21 , and the switches 52 and 53 are surface mounted on the main surface 91b of the module substrate 91 .

In this embodiment, the post-stage amplifier 12b (first transmission amplifier) is mounted on the main surface 91b (the first main surface). On the other hand, the switch 55 is mounted on the main surface 91a (second main surface).

According to the above configuration, the post-stage amplifier 12b is disposed on the main surface 91b of the module substrate 91 and the switch 55 is arranged on the main surface 91a. That is, the rear stage amplifier 12b and the switch 55 are disposed with the module substrate 91 interposed therebetween. Thereby, the switch 55 disposed on the input side of the transmission power amplifier 12 and the output wiring of the post-stage amplifier 12b disposed on the output side of the transmission power amplifier 12 are field coupled, magnetic field coupled, or electromagnetic field coupled. can be restrained For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmission power amplifier 12, and oscillation of the transmission power amplifier 12 can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 12 .

In addition, in the high-frequency module 1B according to the present embodiment, the front-end amplifier 12a is mounted on the main surface 91b. That is, the front-end amplifier 12a and the switch 55 are disposed with the module substrate 91 interposed therebetween. Thereby, it is possible to suppress electric field coupling, magnetic field coupling, or electromagnetic field coupling between the switch 55 disposed on the input side of the transmission power amplifier 12 and the output wiring of the pre-amplifier 12a. For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the front-end amplifier 12a, and oscillation of the front-end amplifier 12a can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 12 .

Further, in this embodiment, the rear stage amplifier 13b (third transmission amplifier) is mounted on the main surface 91a (the second main surface).

As a result, the post-stage amplifier 12b for amplifying the transmission signal of the communication band A and the rear-stage amplifier 13b for amplifying the transmission signal of the communication band B are arranged with the module board 91 interposed therebetween, so that different communication bands are provided. It becomes possible to improve the isolation of the liver.

Further, as shown in Fig. 3A, when the module substrate 91 is viewed in a plan view, it is preferable that the post-stage amplifier 12b and the post-stage amplifier 13b do not overlap.

Thereby, since the distance between the post-stage amplifier 12b and the post-stage amplifier 13b can be ensured large, it becomes possible to further improve the isolation between different communication bands.

Further, in the high-frequency module 1B according to the present embodiment, the post-stage amplifier 12b and the switch 55 are arranged separately on the main surfaces 91a and 91b of the module substrate 91, and further, the post-stage amplifier 12b and the rear stage amplifier 13b may be arranged separately on the main surfaces 91a and 91b of the module substrate 91, and other circuit components may be arranged on any of the main surfaces 91a and 91b, and further, the module substrate 91 ) may be built-in.

Further, in the high-frequency module 1B according to the present embodiment, when the module substrate 91 is viewed in a plan view, it is preferable that the front-end amplifier 12a and the switch 55 overlap.

According to this, the front-end amplifier 12a and the switch 55 can be connected through the via conductors formed in the module substrate 91 along the direction perpendicular to the main surfaces 91a and 91b (z-axis direction). Therefore, since the connecting wiring between the front-end amplifier 12a and the switch 55 can be shortened, the transmission loss of the transmission signal of the communication band A can be reduced.

In addition, in the high frequency module 1B according to the present embodiment, a plurality of external connection terminals 150 are disposed on the main surface 91b side of the module substrate 91 . The high frequency module 1B transmits and receives electrical signals to and from an external substrate disposed on the negative z-axis side of the high frequency module 1B via a plurality of external connection terminals 150 . Also, some of the plurality of external connection terminals 150 are set to the ground potential of the external substrate.

Further, in the high frequency module 1B according to the present embodiment, the transmission power amplifier 13 is mounted on the main surface 91a.

The transmission power amplifier 13 is a component having a large amount of heat among circuit components included in the high frequency module 1B. In order to improve the heat dissipation property of the high frequency module 1B, it is important to dissipate heat from the transmission power amplifier 13 to the external substrate through a heat dissipation path having a small heat resistance. When the transmit power amplifier 13 is mounted on the main surface 91a, the transmit power amplifier 13 and the external connection terminal 150 may be connected through a through electrode penetrating between the main surface 91a and the main surface 91b. . Accordingly, as a heat dissipation path of the transmit power amplifier 13 , a heat dissipation path through only a planar wiring pattern along the xy plane direction having high thermal resistance among wirings in the module substrate 91 can be excluded. Accordingly, it becomes possible to provide a compact high-frequency module 1B with improved heat dissipation from the transmission power amplifier 13 to the external substrate.

Further, from the viewpoint of heat dissipation, the through electrode or heat dissipation member is preferably disposed in the region of the main surface 91b opposite to the region of the main surface 91a in which the rear stage amplifier 13b is disposed. It is preferable that the is not arranged.

In addition, in the high-frequency module 1B according to the present embodiment, the reception low-noise amplifier 21 is disposed on the main surface 91b.

According to this, since the transmission power amplifier 13 and the reception low-noise amplifier 21 are arranged with the module substrate 91 interposed therebetween, it becomes possible to improve the isolation between transmission and reception in the communication band B.

In addition, in the main surface 91b, a plurality of external connection terminals 150 applied as a ground electrode are disposed around the reception low-noise amplifier 21, which greatly affects the reception sensitivity of the reception circuit, so that the reception sensitivity of the reception circuit is reduced. deterioration can be suppressed.

3A and 3B , the reception low-noise amplifier 21 and the switches 52 and 53 may be incorporated in one semiconductor IC 20 . Thereby, the component mounting area of the main surface 91b can be made small. Therefore, the high frequency module 1B can be downsized.

In addition, the external connection terminal 150 may be a bump electrode 160 formed on the main surface 91b. In this case, the resin member 93 is not disposed on the main surface 91b.

In addition, the external connection terminal 150 may be arrange|positioned on the main surface 91a.

[6. Circuit element arrangement configuration of the high-frequency module 1D according to the fourth embodiment]

Fig. 4A is a schematic plan view of the high-frequency module 1D according to the fourth embodiment. 4B is a schematic cross-sectional configuration diagram of the high-frequency module 1D according to the fourth embodiment, specifically, a cross-sectional view taken along the IVB-IVB line in FIG. 4A. In addition, FIG. 4A (a) shows the arrangement of circuit elements when the main surface 91a of the main surfaces 91a and 91b facing each other of the module substrate 91 is viewed from the positive z-axis side. On the other hand, Fig. 4A (b) shows a perspective view of the arrangement of circuit elements when the main surface 91b is viewed from the positive z-axis side.

The high-frequency module 1D according to the fourth embodiment specifically shows the arrangement of each circuit element constituting the high-frequency module 1A according to the embodiment shown in Fig. 1A.

In particular, the high frequency module 1D according to the present embodiment differs from the high frequency module 1A according to the first embodiment in the arrangement of the duplexers 61 and 62 and the switch 53 . Hereinafter, with respect to the high frequency module 1D according to the present embodiment, the same points as those of the high frequency module 1A according to the first embodiment will be omitted, and different points will be mainly described.

The module substrate 91 has a main surface 91a (first main surface) and a main surface 91b (second main surface) opposite to each other, and is a substrate on which the transmitting circuit and the receiving circuit are mounted. As the module substrate 91, an LTCC substrate, an HTCC substrate, a component-embedded substrate, a substrate having RDL, a printed circuit board, or the like having a laminated structure of a plurality of dielectric layers is used. The module substrate 91 according to the present embodiment is composed of dielectric layers L1, L2, L3, L4, L5, L6 and L7 in order from the main surface 91a side. Each of the dielectric layers L4 and L5 is thicker than each of the dielectric layers L1, L2, L3, L6 and L7, and is an inner layer rather than a surface layer of the main surfaces 91a and 91b. The dielectric layer L4 is a centrally located layer among the plurality of dielectric layers of the module substrate 91 , and the dielectric layer L5 is a layer adjacent to the centrally located layer.

4A and 4B , in the high frequency module 1D according to the present embodiment, the transmission power amplifier 11 , the matching circuits 31 and 41 , and the switch 53 are the main surface 91a of the module substrate 91 . ) is placed in On the other hand, the duplexers 61 and 62, the reception low-noise amplifier 21, and the switches 51, 52 and 54 are arranged on the main surface 91b of the module substrate 91. As shown in FIG.

In this embodiment, the post-stage amplifier 11b (first transmission amplifier) is mounted on the main surface 91a (the first main surface). On the other hand, the switch 54 is mounted on the main surface 91b (second main surface).

According to the above configuration, the post-stage amplifier 11b is arranged on the main surface 91a of the module substrate 91 and the switch 54 is arranged on the main surface 91b. That is, the rear stage amplifier 11b and the switch 54 are disposed with the module substrate 91 interposed therebetween. Thereby, the switch 54 disposed on the input side of the transmission power amplifier 11 and the output wiring of the post-stage amplifier 11b disposed on the output side of the transmission power amplifier 11 are field coupled, magnetic field coupled, or electromagnetic field coupled. can be restrained For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmission power amplifier 11, and oscillation of the transmission power amplifier 11 can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 11 .

In addition, in the high frequency module 1D according to the present embodiment, the transmit power amplifier 11 and the duplexers 61 and 62 are disposed on different main surfaces.

As shown in Fig. 4B, a part of the wiring W11 (first wiring) connecting the post-stage amplifier 11b and the switch 51 via the matching circuit 31 is a dielectric layer L4 (first wiring) having a relatively thick layer thickness. 1 inner layer). Further, a part of the wiring W61 (second wiring) connecting the duplexer 61 and the switch 51 is formed in the dielectric layer L5 (second inner layer) having a relatively thick layer thickness. Further, a part of the wiring W62 (second wiring) connecting the duplexer 62 and the switch 51 is formed in the dielectric layer L4 (second inner layer) having a relatively thick layer thickness.

Further, a ground electrode pattern 93G1 is disposed on the dielectric layer L3 adjacent to the dielectric layer L4 , and a ground electrode pattern 93G2 is disposed on the dielectric layer L6 adjacent to the dielectric layer L5 . As shown in Fig. 4B, the ground electrode patterns 93G1 and 93G2 interpose a part of the wiring W11 and a part of the wiring W62 formed in the dielectric layer L4, and a part of the wiring W61 formed in the dielectric layer L5. placed to be placed on In addition, the ground electrode patterns 93G1 and 93G2 are formed on a part of the wiring W11 and a part of the wiring W62 formed in the dielectric layer L4, and the dielectric layer L5 when the module substrate 91 is viewed in a plan view. It overlaps with the wiring W61.

According to the above configuration, the parasitic capacitance of the wiring W11, the wiring W61, and the wiring W62 is suppressed, so that the transmission loss of the wiring W11, the wiring W61, and the wiring W62 can be reduced. Accordingly, the transmission loss of the transmission signal output from the transmission power amplifier 11 can be reduced.

Further, the wiring width of a part of the wiring W11 formed in the dielectric layer L4 is less than or equal to the wiring width of a part of the wiring W11 formed in the surface layer of the main surfaces 91a and 91b, and the wiring W11 formed in the dielectric layer L4 It is preferable that the length of a part of the wiring is equal to or greater than the wiring length of a part of the wiring W11 formed on the surface layer of the main surfaces 91a and 91b. In addition, the wiring width of a part of the wiring W62 formed in the dielectric layer L4 is less than or equal to the wiring width of a part of the wiring W62 formed in the surface layer of the main surfaces 91a and 91b, and the wiring W62 formed in the dielectric layer L4. It is preferable that the length of a part of the wiring is equal to or greater than the wiring length of a part of the wiring W62 formed on the surface layer of the main surfaces 91a and 91b. In addition, the wiring width of a part of the wiring W61 formed in the dielectric layer L5 is less than or equal to the wiring width of a part of the wiring W61 formed in the surface layer of the main surfaces 91a and 91b, and the wiring W61 formed in the dielectric layer L5. It is preferable that the length of a part of the wiring is equal to or greater than the wiring length of a part of the wiring W61 formed on the surface layer of the main surfaces 91a and 91b.

Further, when the wiring length of a part of the wiring W11 formed in the surface layer of the main surfaces 91a and 91b becomes longer than the wiring length of a part of the wiring W11 formed in the dielectric layer L4, in the dielectric layer adjacent to the surface layer , it is preferable that the ground electrode plane is not formed in a region immediately below the part of the wiring W11 formed on the surface layer. Moreover, it is preferable to have the same structure also about the wiring W61 and the wiring W62.

In addition, only one of a part of the wiring W61 connecting the duplexer 61 and the switch 51 and a part of the wiring W62 connecting the duplexer 62 and the switch 51 has a relative layer thickness. may be formed in a thick inner layer. In this case, it is preferable to form the wiring through which a higher frequency signal passes among the wirings W61 and W62 in the inner layer having a relatively thick layer thickness.

According to this configuration, it is possible to suppress the parasitic capacitance of the wiring in which a large parasitic capacitance may be generated among the wiring W61 and the wiring W62, so that the transmission loss of the wiring W61 or the wiring W62 can be more effectively reduced. .

Further, in the high frequency module 1D according to the present embodiment, the switch 53 (antenna switch) is arranged on the main surface 91a, and the duplexers 61 and 62 are arranged on the main surface 91b. As shown in Fig. 4A, when the module substrate 91 is viewed in a plan view, the switch 53 and the duplexers 61 and 62 overlap at least partially.

According to this configuration, since the wiring connecting the switch 53 and the duplexers 61 and 62 can be shortened, it is possible to achieve reduction in transmission loss and miniaturization.

[7. effect, etc.]

As described above, the high-frequency module 1A according to the present embodiment is formed from a module substrate 91 having main surfaces 91a and 91b opposed to each other, transmission input terminals 111 and 112 , and transmission input terminals 111 or 112 . and a post-stage amplifier 11b for amplifying the input transmission signal, and a switch 54 for switching the connection and disconnection between the transmission input terminals 111 and 112 and the post-stage amplifier 11b, wherein the post-stage amplifier 11b includes: It is arranged on the main surface 91a, and the switch 54 is arranged on the main surface 91b.

According to this, the rear stage amplifier 11b and the switch 54 are arranged with the module substrate 91 interposed therebetween. Thereby, the switch 54 disposed on the input side of the transmission power amplifier 11 and the output wiring of the post-stage amplifier 11b disposed on the output side of the transmission power amplifier 11 are field coupled, magnetic field coupled, or electromagnetic field coupled. can be restrained For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmission power amplifier 11, and oscillation of the transmission power amplifier 11 can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 11 .

Further, the high-frequency module 1A may further include a front-end amplifier 11a connected between the switch 54 and the input terminal of the post-stage amplifier 11b.

In addition, the front-end amplifier 11a may be arrange|positioned on the main surface 91a.

Thereby, it is possible to suppress electric field coupling, magnetic field coupling, or electromagnetic field coupling between the switch 54 disposed on the input side of the transmission power amplifier 11 and the output wiring of the front stage amplifier 11a. For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the front-end amplifier 11a, and oscillation of the front-end amplifier 11a can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 11 .

Further, when the module substrate 91 is viewed in a plan view, the pre-amplifier 11a and the switch 54 may overlap at least in part.

According to this configuration, the front-end amplifier 11a and the switch 54 can be connected through the via conductors formed in the module substrate 91 along the direction perpendicular to the main surfaces 91a and 91b (the z-axis direction). Therefore, since the connecting wiring between the front-stage amplifier 11a and the switch 54 can be shortened, the transmission loss of the transmission signal can be reduced.

In addition, the high-frequency module 1A further includes a matching circuit 31 connected to the output terminal of the post-stage amplifier 11b, and the matching circuit 31 includes an inductor, the inductor being disposed on the main surface 91a, good to be

According to this, the inductor of the matching circuit 31 and the switch 54 are arranged with the module substrate 91 interposed therebetween. Thereby, it is possible to suppress magnetic field coupling or electromagnetic field coupling between the switch 54 disposed on the input side of the transmission power amplifier 11 and the inductor of the matching circuit 31 disposed on the output side of the transmission power amplifier 11 . . For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmit power amplifier 11, and oscillation of the transmit power amplifier 11 can be further suppressed. Accordingly, it becomes possible to further suppress the unstable operation of the transmission power amplifier 11 .

Further, the high frequency module 1A may further include an external connection terminal 150 , and the external connection terminal 150 may be disposed on the main surface 91b.

Further, the antenna connection terminal 100 and the reception low noise amplifier 21 for amplifying the received signal inputted from the antenna connection terminal 100 are further provided, and the reception low noise amplifier 21 is disposed on the main surface 91b. good night.

According to this, since the transmission power amplifier 11 and the reception low-noise amplifier 21 are disposed with the module substrate 91 interposed therebetween, it becomes possible to improve the isolation between transmission and reception. In addition, among the main surfaces 91a and 91b, on the main surface 91b facing the external substrate, the transmission power amplifier 11, which is difficult to reduce the multiplication ratio, is not disposed, and the reception low noise amplifier 21 which is easy to reduce the multiplication ratio is disposed. It becomes possible to reduce the height of the whole high-frequency module 1A. In addition, since a plurality of external connection terminals 150 applied as a ground electrode are disposed around the reception low-noise amplifier 21, which greatly affects the reception sensitivity of the reception circuit, deterioration of the reception sensitivity of the reception circuit can be suppressed.

Further, the high-frequency module 1D is disposed on the main surface 91b and includes a transmission filter 61T through which the transmission signal output from the post-stage amplifier 11b passes, and a transmission filter 61T disposed on the main surface 91b and Further comprising a switch 51 for switching the connection and disconnection of the post-stage amplifier 11b, the module substrate 91 has a structure in which a plurality of dielectric layers L1 to L7 are stacked, the post-stage amplifier 11b and the switch At least a part of the wiring W11 connecting 51 is disposed in the dielectric layer L4 except for the surface layer formed on the main surfaces 91a and 91b among the plurality of dielectric layers L1 to L7, and the transmission filter 61T and the switch At least a part of the wiring W61 connecting 51 is disposed in the dielectric layer L5 except for the surface layer among the plurality of dielectric layers L1 to L7, and the dielectric layers L4 and L5 are thicker than the other dielectric layers, and the dielectric layer ( Ground electrode patterns 93G1 and 93G2 are formed in the dielectric layer L3 adjacent to L4 and the dielectric layer L6 adjacent to the dielectric layer L5. At least a portion of W11 and at least a portion of the wiring W61 may overlap the ground electrode patterns 93G1 and 93G2.

According to this, the parasitic capacitance of the wiring W11 and the wiring W61 is suppressed, so that the transmission loss of the wiring W11 and the wiring W61 can be reduced. Accordingly, the transmission loss of the transmission signal output from the transmission power amplifier 11 can be reduced.

Further, the high-frequency module 1D is disposed on the main surface 91a and further includes a switch 53 connected to the output terminal of the transmission filter 61T, and when the module substrate 91 is viewed in a plan view, the switch 53 ) and the transmission filter 61T may overlap at least partially.

According to this, the wiring connecting the switch 53 and the transmission filter 61T can be shortened, so that it is possible to achieve reduction in transmission loss and miniaturization.

Further, in the high-frequency module 1B according to the present modification, the post-stage amplifier 12b amplifies the transmission signal of the communication band A inputted from the transmission input terminal 110, and the rear-stage amplifier 13b includes the transmission input terminal ( The transmission signal of the communication band B inputted from 110 is amplified, the high frequency module 1B, the rear stage amplifier 12b is arranged on the main surface 91b, the rear stage amplifier 13b and the switch 55 are the main surface 91a ) may be placed in

According to this configuration, the rear stage amplifier 12b and the switch 55 are arranged with the module substrate 91 interposed therebetween. Thereby, the switch 55 disposed on the input side of the transmission power amplifier 12 and the output wiring of the post-stage amplifier 12b disposed on the output side of the transmission power amplifier 12 are field coupled, magnetic field coupled, or electromagnetic field coupled. can be restrained For this reason, an unnecessary feedback loop for transmitting a high-frequency signal is formed between the input and output of the transmission power amplifier 12, and oscillation of the transmission power amplifier 12 can be suppressed. Accordingly, it becomes possible to suppress unstable operation of the transmit power amplifier 12 . Further, since the post-stage amplifier 12b for amplifying the transmission signal of the communication band A and the rear-stage amplifier 13b for amplifying the transmission signal of the communication band B are disposed with the module board 91 interposed therebetween, isolation between different communication bands is achieved. It becomes possible to improve

In addition, when the module substrate 91 is viewed in a plan view, it is preferable that the post-stage amplifier 12b and the post-stage amplifier 13b do not overlap.

Thereby, since the distance between the post-stage amplifier 12b and the post-stage amplifier 13b can be ensured large, it becomes possible to further improve the isolation between different communication bands.

Moreover, in the high frequency module 1B, the external connection terminal 150 may further be provided, and the external connection terminal may be arrange|positioned on the main surface 91b.

Further, in the high frequency module 1B, the antenna connection terminal 100 and the reception low noise amplifier 21 for amplifying the received signal input from the antenna connection terminal 100 are further provided, and the reception low noise amplifier 21 includes: It may be arrange|positioned on the main surface 91b.

According to this, since the transmission power amplifier 13 and the reception low-noise amplifier 21 are disposed with the module substrate 91 interposed therebetween, it is possible to improve the isolation between transmission and reception. In addition, since a plurality of external connection terminals 150 applied as a ground electrode are disposed around the reception low-noise amplifier 21, which greatly affects the reception sensitivity of the reception circuit, deterioration of the reception sensitivity of the reception circuit can be suppressed.

In addition, the communication device 5A includes an antenna 2 , an RFIC 3 that processes a high-frequency signal transmitted and received by the antenna 2 , and a high-frequency module that transmits a high-frequency signal between the antenna 2 and the RFIC 3 . (1A) is provided.

This makes it possible to suppress unstable operation of the transmission power amplifier 11 .

(Other embodiments, etc.)

In the above, the high frequency module and the communication device according to the embodiment of the present invention have been described with reference to the embodiment, the modified example, and the example. It is not limited. Other embodiments realized by combining arbitrary components in the above embodiments, modifications, and examples, and the above embodiments, modifications and examples are considered by those skilled in the art without departing from the gist of the present invention. Modifications obtained by performing various modifications in the present invention and various devices incorporating the above-mentioned high-frequency module and communication device are also included in the present invention.

For example, in the high-frequency module and communication device according to the above embodiments, modifications, and examples, other circuit elements, wirings, etc. may be inserted between the paths for connecting the respective circuit elements and signal paths shown in the drawings.

INDUSTRIAL APPLICABILITY The present invention is a high-frequency module disposed in a multi-band-compatible front end, and can be widely used in communication devices such as mobile phones.

Claims (14)

A module substrate having a first main surface and a second main surface opposite to each other;
a transmit input terminal;
a first transmission amplifier for amplifying the transmission signal input from the transmission input terminal;
a first switch for switching connection and disconnection between the transmission input terminal and the first transmission amplifier;
The first transmission amplifier is disposed on the first main surface,
The first switch is disposed on the second main surface,
Further comprising an impedance matching circuit connected to the output terminal of the first transmission amplifier,
The impedance matching circuit includes an inductor,
The inductor is a high-frequency module disposed on the first main surface. The method of claim 1,
and a second transmission amplifier connected between the input terminal of the first transmission amplifier and the first switch. 3. The method of claim 2,
The second transmission amplifier is a high frequency module disposed on the first main surface. 4. The method of claim 3,
When the module substrate is viewed in a plan view, the second transmission amplifier and the first switch are at least partially overlapped with each other. delete 5. The method according to any one of claims 1 to 4,
Further comprising an external connection terminal,
and the external connection terminal is disposed on the second main surface. 7. The method of claim 6,
antenna connection terminal;
Further comprising a receiving amplifier for amplifying the received signal input from the antenna connection terminal,
The receiving amplifier is a high frequency module disposed on the second main surface. 5. The method according to any one of claims 1 to 4,
a transmission filter disposed on the second main surface and passing the transmission signal output from the first transmission amplifier;
a second switch disposed on the second main surface and configured to switch connection and disconnection between the transmission filter and the first transmission amplifier;
The module substrate has a structure in which a plurality of dielectric layers are stacked,
At least a part of the first wiring connecting the first transmission amplifier and the second switch is disposed in a first inner layer excluding the surface layer formed on the first main surface and the second main surface among the plurality of dielectric layers,
At least a portion of a second wiring connecting the transmission filter and the second switch is disposed in a second inner layer excluding the surface layer among the plurality of dielectric layers,
the first inner layer and the second inner layer are thicker than the other dielectric layers;
A ground electrode pattern is formed on the dielectric layer adjacent to the first inner layer and the dielectric layer adjacent to the second inner layer,
When the module substrate is viewed in a plan view, the at least part of the first wiring and the at least part of the second wiring overlap the ground electrode pattern. 9. The method of claim 8,
an antenna switch disposed on the first main surface and connected to an output terminal of the transmission filter;
When the module substrate is viewed in a plan view, the antenna switch and the transmission filter are at least partially overlapped with each other. 5. The method according to any one of claims 1 to 4,
The first transmission amplifier amplifies the transmission signal of the first communication band input from the transmission input terminal,
The high-frequency module is
Further comprising a third transmission amplifier for amplifying the transmission signal of the second communication band input from the transmission input terminal,
The third transmission amplifier is a high frequency module disposed on the second main surface. 11. The method of claim 10,
When the module substrate is viewed in a plan view, the first transmission amplifier and the third transmission amplifier do not overlap each other. 11. The method of claim 10,
Further comprising an external connection terminal,
and the external connection terminal is disposed on the first main surface. 13. The method of claim 12,
antenna connection terminal;
Further comprising a receiving amplifier for amplifying the received signal input from the antenna connection terminal,
The receiving amplifier is a high frequency module disposed on the first main surface. antenna and
an RF signal processing circuit for processing high-frequency signals transmitted and received through the antenna;
A communication device comprising the high-frequency module according to any one of claims 1 to 4, which transmits the high-frequency signal between the antenna and the RF signal processing circuit.

Images