JP2021093709A - High frequency module and communication device - Google Patents

Abstract

To provide a high frequency module that suppresses unstable operation of a transmission power amplifier.SOLUTION: A high frequency module 1A includes: a module substrate 91 having principal surfaces 91a and 91b facing each other; transmission input terminals 111 and 112; a post-stage amplifier 11b that amplifies a transmission signal input from the transmission input terminal 111 or 112; and a switch 54 that switches between connection and non-connection between the transmission input terminals 111 and 112, and the post-stage amplifier 11b. The post-stage amplifier 11b is disposed on the principal surface 91a, and the switch 54 is disposed on the principal surface 91b.SELECTED DRAWING: Figure 2A

Description

The present invention relates to high frequency modules and communication devices.

In mobile communication devices such as mobile phones, in particular, with the progress of multi-band, the arrangement configuration of circuit elements constituting the high-frequency front-end circuit has become complicated.

Patent Document 1 discloses a configuration of a front-end circuit having two transmission power amplifiers in order to execute transmission in a plurality of communication bands (frequency bands). On the input side of the two transmission power amplifiers, a switch for switching which of the two transmission power amplifiers the transmission signals from the two transceiver circuits is input to is arranged. According to this, the two transmission signals output from the two transceiver circuits can be transmitted from the two antennas with high isolation via the front-end circuit.

U.S. Patent Application Publication No. 2018/0131501

However, when the front-end circuit disclosed in Patent Document 1 is composed of one module as a small front-end circuit, the signal path on the input side of the transmission power amplifier and the signal path on the output side of the transmission power amplifier become different. It is assumed that the proximity of the two signal paths deteriorates the isolation of the two signal paths. When the isolation between the input side signal path and the output side signal path of the transmission power amplifier deteriorates, an unnecessary high frequency signal feedback loop is formed between the input and output of the transmission power amplifier. In this case, there arises a problem that the transmission power amplifier oscillates under a predetermined condition and the operation of the transmission power amplifier becomes unstable.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a high-frequency module and a communication device in which unstable operation of a transmission power amplifier is suppressed.

In order to achieve the above object, the high frequency module according to one aspect of the present invention is input from a module board having a first main surface and a second main surface facing each other, a transmission input terminal, and the transmission input terminal. The first transmission amplifier is provided with a first transmission amplifier for amplifying a transmission signal and a switch for switching connection and disconnection between the transmission input terminal and the first transmission amplifier, and the first transmission amplifier is arranged on the first main surface. The switch is arranged on the second main surface.

According to the present invention, it is possible to provide a high frequency module and a communication device in which unstable operation of a transmission power amplifier is suppressed.

It is a circuit block diagram of the high frequency module and a communication device which concerns on embodiment. It is a circuit block diagram of the high frequency module and a communication device which concerns on a modification of embodiment. It is a top view of the plan structure of the high frequency module which concerns on Example 1. FIG. It is sectional drawing of the high frequency module which concerns on Example 1. FIG. It is sectional drawing of the high frequency module which concerns on Example 2. FIG. It is a top view of the plan structure of the high frequency module which concerns on Example 3. FIG. It is sectional drawing of the high frequency module which concerns on Example 3. FIG. It is a top view of the plan structure of the high frequency module which concerns on Example 4. FIG. It is sectional drawing of the high frequency module which concerns on Example 4. FIG.

Hereinafter, embodiments of the present invention will be described in detail. The embodiments described below are comprehensive or specific examples. In addition, the numerical values, shapes, materials, components, arrangement of components, connection forms, etc. shown in the following embodiments, examples, and modifications are examples, and are not intended to limit the present invention. Further, among the components in the following examples and modifications, the components not described in the independent claims will be described as arbitrary components. In addition, the sizes of the components shown in the drawings or the ratio of the sizes are not always exact. In each figure, substantially the same configuration may be designated by the same reference numerals, and duplicate description may be omitted or simplified.

Further, in the following, terms indicating relationships between elements such as parallel and vertical, terms indicating the shape of elements such as a rectangular shape, and numerical ranges do not only express strict meanings but are substantial. Means that it also includes a range equivalent to, for example, a difference of about several percent.

Further, in the following, in A, B and C mounted on the substrate, "C is arranged between A and B in the plan view of the substrate (or the main surface of the substrate)" means that the substrate is used. It means that a straight line connecting an arbitrary point in A and an arbitrary point in B passes through the region C in a plan view. Further, the plan view of the substrate means that the substrate and the circuit elements mounted on the substrate are orthographically projected onto a plane parallel to the substrate.

Further, in the following, the "transmission path" is a transmission line composed of a wiring through which a high-frequency transmission signal propagates, an electrode directly connected to the wiring, the wiring, a terminal directly connected to the electrode, and the like. Means that. Further, the "reception path" means a transmission line composed of a wiring through which a high-frequency reception signal propagates, an electrode directly connected to the wiring, and a wiring or a terminal directly connected to the electrode. To do.

Further, in the following, "A and B are connected" is applied not only when A and B are physically connected, but also when A and B are electrically connected. It also applies if you have.

(Embodiment)
[1. Circuit configuration of high-frequency module 1A and communication device 5A]
FIG. 1A is a circuit configuration diagram of the high frequency module 1A and the communication device 5A according to the embodiment. As shown in the figure, the communication device 5A includes a high frequency module 1A, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

The RFIC 3 is an RF signal processing circuit that processes high frequency signals transmitted and received by the antenna 2. Specifically, the RFIC 3 processes the received signal input via the reception path of the high frequency module 1A by down-conversion or the like, and outputs the received signal generated by the signal processing to the BBIC 4. Further, the RFIC 3 processes the transmission signal input from the BBIC 4 by up-conversion or the like, and outputs the transmission signal generated by the signal processing to the transmission path of the high frequency module 1A.

The BBIC 4 is a circuit that processes a signal using an intermediate frequency band having a lower frequency than the high frequency signal transmitted through the high frequency module 1A. The signal processed by the BBIC 4 is used, for example, as an image signal for displaying an image, or as an audio signal for a call via a speaker.

Further, the RFIC 3 has a function as a control unit for controlling the connection of the switches 51, 52, 53 and 54 included in the high frequency module 1A based on the communication band (frequency band) used. Specifically, the RFIC 3 switches the connection of the switches 51 to 54 included in the high frequency module 1A by a control signal (not shown). The control unit may be provided outside the RFIC3, and may be provided, for example, in the high frequency module 1A or the BBIC4.

The antenna 2 is connected to the antenna connection terminal 100 of the high frequency module 1A, emits a high frequency signal output from the high frequency module 1A, receives a high frequency signal from the outside, and outputs the high frequency signal to the high frequency module 1A.

In the communication device 5A according to the present embodiment, the antenna 2 and the BBIC 4 are not essential components.

Next, the detailed configuration of the high frequency module 1A will be described.

As shown in FIG. 1A, the high frequency module 1A includes an antenna connection terminal 100, transmission input terminals 111 and 112, a reception output terminal 120, a transmission power amplifier 11, a reception low noise amplifier 21, and transmission filters 61T and 62T. , The receiving filters 61R and 62R, the matching circuits 31 and 41, and the switches 51, 52, 53 and 54.

The antenna connection terminal 100 is an antenna common terminal connected to the antenna 2.

The transmission power amplifier 11 has a front stage amplifier 11a and a rear stage amplifier 11b, and transmits the communication band A (first communication band) and the communication band B (second communication band) input from the transmission input terminals 111 and 112. It is an amplifier that amplifies the signal.

The latter stage amplifier 11b is an example of the first transmission amplifier, and the input terminal is connected to the output terminal of the front stage amplifier 11a, and the output terminal is connected to the matching circuit 31.

The front stage amplifier 11a is an example of a second transmission amplifier, in which an input terminal is connected to a switch 54 and an output terminal is connected to an input terminal of a rear stage amplifier 11b. That is, the front stage amplifier 11a and the rear stage amplifier 11b are connected in series.

The transmission power amplifier 11 may not be composed of the longitudinally connected front stage amplifier 11a and the rear stage amplifier 11b, may be composed of a one-stage amplifier, or may be composed of three or more stages of amplifiers. You may.

The reception low noise amplifier 21 is a reception amplifier that amplifies the high frequency signals of the communication band A and the communication band B with low noise and outputs them to the reception output terminal 120.

The transmission filter 61T is arranged in the transmission path connecting the transmission power amplifier 11 and the antenna connection terminal 100, and among the transmission signals amplified by the transmission power amplifier 11, the transmission signal in the transmission band of the communication band A is passed. Further, the transmission filter 62T is arranged in the transmission path connecting the transmission power amplifier 11 and the antenna connection terminal 100, and among the transmission signals amplified by the transmission power amplifier 11, the transmission signal in the transmission band of the communication band B is passed. ..

The reception filter 61R is arranged in the reception path connecting the reception low noise amplifier 21 and the antenna connection terminal 100, and passes the reception signal in the reception band of the communication band A among the reception signals input from the antenna connection terminal 100. Further, the reception filter 62R is arranged in the reception path connecting the reception low noise amplifier 21 and the antenna connection terminal 100, and passes through the reception signal in the reception band of the communication band B among the reception signals input from the antenna connection terminal 100. Let me.

The transmission filter 61T and the reception filter 61R constitute a duplexer 61 having a communication band A as a pass band. Further, the transmission filter 62T and the reception filter 62R constitute a duplexer 62 having a communication band B as a pass band.

The matching circuit 31 is arranged in the transmission path connecting the transmission power amplifier 11 and the transmission filters 61T and 62T, and performs impedance matching between the transmission power amplifier 11 and the transmission filters 61T and 62T.

The matching circuit 41 is arranged in the reception path connecting the reception low noise amplifier 21 and the reception filters 61R and 62R, and performs impedance matching between the reception low noise amplifier 21 and the reception filters 61R and 62R.

The switch 54 has a common terminal and two selection terminals. The common terminal of the switch 54 is connected to the input terminal of the pre-stage amplifier 11a. One selection terminal of the switch 54 is connected to the transmission input terminal 111, and the other selection terminal of the switch 54 is connected to the transmission input terminal 112. In this connection configuration, the switch 54 switches between the connection between the common terminal and one of the selection terminals and the connection between the common terminal and the other selection terminal. That is, the switch 54 switches between connection and disconnection between the transmission input terminals 111 and 112 and the transmission power amplifier 11. The switch 54 is composed of, for example, a SPDT (Single Pole Double Show) type switch circuit.

For example, the transmission signal of the communication band A is input from the transmission input terminal 111, and the transmission signal of the communication band B is input from the transmission input terminal 112, for example.

Further, for example, the transmission signal of the communication band A or B in the 4th generation mobile communication system (4G) is input from the transmission input terminal 111, and for example, the 5th generation mobile communication system (5G) is input from the transmission input terminal 112. ), The transmission signal of the communication band A or B may be input.

The switch 51 has a common terminal and two selection terminals. The common terminal of the switch 51 is connected to the output terminal of the transmission power amplifier 11 via the matching circuit 31. One selection terminal of the switch 51 is connected to the transmission filter 61T, and the other selection terminal of the switch 51 is connected to the transmission filter 62T. In this connection configuration, the switch 51 switches between the connection between the common terminal and one of the selection terminals and the connection between the common terminal and the other selection terminal. That is, the switch 51 switches between the connection between the transmission path for transmitting the transmission signal of the communication band A and the transmission power amplifier 11 and the connection between the transmission path for transmitting the transmission signal of the communication band B and the transmission power amplifier 11. .. The switch 51 is composed of, for example, a SPDT type switch circuit.

The switch 52 has a common terminal and two selection terminals. The common terminal of the switch 52 is connected to the input terminal of the reception low noise amplifier 21 via the matching circuit 41. One selection terminal of the switch 52 is connected to the reception filter 61R, and the other selection terminal of the switch 52 is connected to the reception filter 62R. In this connection configuration, the switch 52 switches between the connection between the common terminal and one of the selection terminals and the connection between the common terminal and the other selection terminal. That is, the switch 52 connects the reception low noise amplifier 21 with the reception path for transmitting the reception signal of the communication band A, and the connection between the reception low noise amplifier 21 and the reception path for transmitting the reception signal of the communication band B. To switch. The switch 52 is composed of, for example, a SPDT type switch circuit.

The switch 53 is an example of an antenna switch, and is connected to the antenna connection terminal 100, and (1) the connection between the antenna connection terminal 100 and the signal path for transmitting the transmission signal and the reception signal of the communication band A, and (2) the antenna. The connection between the connection terminal 100 and the signal path for transmitting the transmission signal and the reception signal of the communication band B is switched. The switch 53 may be a multi-connection type switch circuit capable of simultaneously performing the above (1) and (2).

A multiplexer may be arranged between the switch 53 and the antenna connection terminal 100. Further, a matching circuit may be arranged between the switch 53 and the duplexer 61 and between the switch 53 and the duplexer 62.

The transmission filters 61T and 62T and the reception filters 61R and 62R are, for example, a surface acoustic wave filter using SAW (Surface Acoustic Wave), a surface acoustic wave filter using BAW (Bulk Acoustic Wave), an LC resonance filter, and a dielectric material. It may be any of the filters, and is not limited to these.

Further, the transmission power amplifier 11 and the reception low noise amplifier 21 are composed of, for example, a field effect transistor (FET) or a heterobipolar transistor (HBT) made of Si-based CMOS (Complementary Metal Oxide Semiconductor) or GaAs. Has been done.

Further, the reception low noise amplifier 21, the switches 52 and 53 may be formed in one semiconductor IC (Integrated Circuit). Further, the semiconductor IC may further include a transmission power amplifier 11, switches 51 and 54. The semiconductor IC is composed of, for example, CMOS. Specifically, SOI (Silicon On)
It is formed by an Insulator) process. This makes it possible to manufacture semiconductor ICs at low cost. The semiconductor IC may be composed of at least one of GaAs, SiGe, and GaN. This makes it possible to output a high-frequency signal having high-quality amplification performance and noise performance.

In the configuration of the high frequency module 1A described above, the switch 54, the transmission power amplifier 11, the matching circuit 31, the switch 51, the transmission filter 61T, and the switch 53 transmit the transmission signal of the communication band A toward the antenna connection terminal 100. 1 A transmission circuit is configured. Further, the switch 53, the reception filter 61R, the switch 52, the matching circuit 41, and the reception low noise amplifier 21 constitute a first reception circuit that transmits the reception signal of the communication band A from the antenna 2 via the antenna connection terminal 100. ..

Further, the switch 54, the transmission power amplifier 11, the matching circuit 31, the switch 51, the transmission filter 62T, and the switch 53 form a second transmission circuit for transmitting the transmission signal of the communication band B toward the antenna connection terminal 100. Further, the switch 53, the reception filter 62R, the switch 52, the matching circuit 41, and the reception low noise amplifier 21 constitute a second reception circuit that transmits the reception signal of the communication band B from the antenna 2 via the antenna connection terminal 100. ..

According to the above circuit configuration, the high frequency module 1A can independently transmit, receive, or transmit / receive either the high frequency signal of the communication band A or the high frequency signal of the communication band B. Further, the high frequency module 1A can execute the high frequency signal of the communication band A and the high frequency signal of the communication band B by at least one of simultaneous transmission, simultaneous reception, and simultaneous transmission / reception.

In the high frequency module according to the present invention, the two transmission circuits and the two reception circuits do not have to be connected to the antenna connection terminal 100 via the switch 53, and the two transmission circuits and the two reception circuits are received. The circuit may be connected to the antenna 2 via different terminals. Further, the high frequency module according to the present invention may have at least a first transmission circuit.

Further, in the high frequency module according to the present invention, the first transmission circuit may include a post-stage amplifier 11b and a switch 54.

[2. Circuit configuration of high-frequency module 1B and communication device 5B according to a modified example]
FIG. 1B is a circuit configuration diagram of a high frequency module 1B and a communication device 5B according to a modified example of the embodiment. As shown in the figure, the communication device 5B includes a high frequency module 1B, an antenna 2, an RFIC 3, and a BBIC 4. The communication device 5B according to this modification differs from the communication device 5A according to the embodiment only in the configuration of the high frequency module 1B. Hereinafter, the description of the antenna 2, RFIC3 and BBIC4 will be omitted, and the configuration of the high frequency module 1B will be described.

As shown in FIG. 1B, the high frequency module 1B includes an antenna connection terminal 100, a transmission input terminal 110, a reception output terminal 120, a transmission power amplifier 12 and 13, a reception low noise amplifier 21, and a transmission filter 61T and 62T. The receiving filters 61R and 62R, matching circuits 31, 32 and 41, and switches 52, 53 and 55 are provided. The high-frequency module 1B according to this modification has a different transmission circuit configuration from the high-frequency module 1A according to the embodiment. Hereinafter, the same points as those of the high frequency module 1A according to the embodiment of the high frequency module 1B according to the present modification will be omitted, and the differences will be mainly described.

The transmission power amplifier 12 is an amplifier that has a front stage amplifier 12a and a rear stage amplifier 12b and amplifies a transmission signal of the communication band A (first communication band) input from the transmission input terminal 110.

The rear-stage amplifier 12b is an example of the first transmission amplifier, in which the input terminal is connected to the output terminal of the front-stage amplifier 12a and the output terminal is connected to the matching circuit 31.

The front stage amplifier 12a is an example of the second transmission amplifier, and the input terminal is connected to the switch 55, and the output terminal is connected to the input terminal of the rear stage amplifier 12b. That is, the front stage amplifier 12a and the rear stage amplifier 12b are connected in cascade.

The transmission power amplifier 12 may not be composed of the longitudinally connected front stage amplifier 12a and the rear stage amplifier 12b, may be composed of a one-stage amplifier, or may be composed of three or more stages of amplifiers. You may.

The transmission power amplifier 13 is an amplifier that has a front stage amplifier 13a and a rear stage amplifier 13b and amplifies a transmission signal of the communication band B (second communication band) input from the transmission input terminal 110.

The rear-stage amplifier 13b is an example of a third transmission amplifier, in which an input terminal is connected to an output terminal of the front-stage amplifier 13a and an output terminal is connected to a matching circuit 32.

The front-stage amplifier 13a is an example of a fourth transmission amplifier, in which an input terminal is connected to a switch 55 and an output terminal is connected to an input terminal of a rear-stage amplifier 13b. That is, the front stage amplifier 13a and the rear stage amplifier 13b are connected in series.

The transmission power amplifier 13 may not be composed of the longitudinally connected front stage amplifier 13a and the rear stage amplifier 13b, may be composed of a one-stage amplifier, or may be composed of three or more stages of amplifiers. You may.

The transmission filter 61T is arranged in the transmission path connecting the transmission power amplifier 12 and the antenna connection terminal 100, and passes the transmission signal in the transmission band of the communication band A amplified by the transmission power amplifier 12. Further, the transmission filter 62T is arranged in the transmission path connecting the transmission power amplifier 13 and the antenna connection terminal 100, and passes the transmission signal in the transmission band of the communication band B amplified by the transmission power amplifier 13.

The matching circuit 31 is arranged in the transmission path connecting the transmission power amplifier 12 and the transmission filter 61T, and performs impedance matching between the transmission power amplifier 12 and the transmission filter 61T. The matching circuit 32 is arranged in the transmission path connecting the transmission power amplifier 13 and the transmission filter 62T, and performs impedance matching between the transmission power amplifier 13 and the transmission filter 62T.

The switch 55 has a common terminal and two selection terminals. The common terminal of the switch 55 is connected to the transmission input terminal 110. One of the selection terminals of the switch 55 is connected to the input terminal of the pre-stage amplifier 12a. The other selection terminal of the switch 55 is connected to the input terminal of the pre-stage amplifier 13a. In this connection configuration, the switch 55 switches between the connection between the common terminal and one of the selection terminals and the connection between the common terminal and the other selection terminal. That is, the switch 55 switches between connection and disconnection between the transmission input terminal 110 and the transmission power amplifiers 12 and 13. The switch 55 is composed of, for example, a SPDT type switch circuit.

Note that, for example, transmission signals of communication band A and communication band B are input from the transmission input terminal 110.

Further, for example, a transmission signal of the communication band A in 4G and a transmission signal of the communication band B in 5G may be input from the transmission input terminal 110.

The switch 55 may be configured by a DPDT (Double Pole Double Tlow) type switch circuit having two common terminals and two selection terminals. In this case, the high frequency module 1B has two transmission input terminals 111 and 112, the transmission input terminal 111 is connected to one common terminal of the switch 55, and the transmission input terminal 112 is the other common terminal of the switch 55. Is connected with. In this connection configuration, the switch 55 switches the connection between one common terminal and one selection terminal and the connection between one common terminal and the other selection terminal, and also connects the other common terminal and one selection terminal. Switch the connection and the connection between the other common terminal and the other selection terminal. That is, the switch 55 switches between connection and disconnection between the transmission input terminals 111 and 112 and the transmission power amplifiers 12 and 13. In this case, for example, the transmission signal of the communication band A is input from the transmission input terminal 111, and the transmission signal of the communication band B is input from the transmission input terminal 112.

Further, for example, the transmission signals of the communication band A and the communication band B at the transmission input terminals 111 to 4G may be input, and the transmission signals of the communication band A and the communication band B at the transmission input terminals 112 to 5G may be input.

Further, the transmission power amplifiers 12 and 13 and the reception low noise amplifier 21 are composed of, for example, FETs or HBTs made of Si-based CMOS or GaAs.

In the configuration of the high frequency module 1B described above, the switch 55, the transmission power amplifier 12, the matching circuit 31, the transmission filter 61T, and the switch 53 are the first transmission circuits that transmit the transmission signal of the communication band A toward the antenna connection terminal 100. To configure. Further, the switch 53, the reception filter 61R, the switch 52, the matching circuit 41, and the reception low noise amplifier 21 constitute a first reception circuit that transmits the reception signal of the communication band A from the antenna 2 via the antenna connection terminal 100. ..

Further, the switch 55, the transmission power amplifier 13, the matching circuit 32, the transmission filter 62T, and the switch 53 form a second transmission circuit for transmitting the transmission signal of the communication band B toward the antenna connection terminal 100. Further, the switch 53, the reception filter 62R, the switch 52, the matching circuit 41, and the reception low noise amplifier 21 constitute a second reception circuit that transmits the reception signal of the communication band B from the antenna 2 via the antenna connection terminal 100. ..

According to the above circuit configuration, the high frequency module 1B can independently transmit, receive, or transmit / receive either the high frequency signal of the communication band A or the high frequency signal of the communication band B. Further, the high frequency module 1B can execute the high frequency signal of the communication band A and the high frequency signal of the communication band B by at least one of simultaneous transmission, simultaneous reception, and simultaneous transmission / reception.

[3. Miniaturization of high frequency modules 1A and 1B]
Here, when each circuit element constituting the high-frequency module 1A or 1B is mounted on one module board as a small front-end circuit, it is necessary to reduce the circuit component layout area on the surface of the module board. In this case, it is assumed that the isolation of the two signal paths deteriorates due to the proximity of the signal path on the input side of the transmission power amplifier and the signal path on the output side of the transmission power amplifier. When the isolation between the input side signal path and the output side signal path of the transmission power amplifier deteriorates, an unnecessary high-frequency signal feedback loop is formed between the input and output of the transmission power amplifier by the two signal paths. In this case, there arises a problem that the transmission power amplifier oscillates under a predetermined condition and the operation of the transmission power amplifier becomes unstable.

On the other hand, the high frequency modules 1A and 1B have a configuration that suppresses electric field coupling, magnetic field coupling, or electromagnetic field coupling between the signal path on the input side and the signal path on the output side of the transmission power amplifier. .. Hereinafter, a configuration for improving the isolation between the input and output of the transmission power amplifier in the high frequency module 1A according to the embodiment and the high frequency module 1B according to the modified example will be described.

[4. Circuit element arrangement configuration of high frequency module 1A according to the first embodiment]
FIG. 2A is a schematic plan view of the high frequency module 1A according to the first embodiment. Further, FIG. 2B is a schematic cross-sectional configuration diagram of the high frequency module 1A according to the first embodiment, and specifically, is a cross-sectional view taken along the line IIB-IIB of FIG. 2A. Note that FIG. 2A shows a layout of circuit elements of the main surfaces 91a and 91b of the module substrate 91 facing each other when the main surface 91a is viewed from the positive direction side of the z-axis. .. On the other hand, FIG. 2A (b) shows a perspective view of the arrangement of the circuit elements when the main surface 91b is viewed from the positive direction side of the z-axis.

The high-frequency module 1A according to the embodiment specifically shows the arrangement configuration of each circuit element constituting the high-frequency module 1A according to the embodiment shown in FIG. 1A.

As shown in FIGS. 2A and 2B, in addition to the circuit configuration shown in FIG. 1A, the high frequency module 1A according to the present embodiment further includes a module substrate 91, resin members 92 and 93, and an external connection terminal 150. And have.

The module substrate 91 has a main surface 91a (first main surface) and a main surface 91b (second main surface) facing each other, and is a substrate on which the transmission circuit and the reception circuit are mounted. Examples of the module substrate 91 include a low temperature co-fired ceramics (LTCC) substrate having a laminated structure of a plurality of dielectric layers, a high temperature co-fired ceramics (HTCC) substrate, and the like. A board having a built-in component, a board having a redistribution layer (RDL), a printed circuit board, or the like is used.

The resin member 92 is arranged on the main surface 91a of the module board 91, covers a part of the transmission circuit, a part of the reception circuit, and the main surface 91a of the module board 91, and covers the transmission circuit and the reception circuit. It has a function to ensure reliability such as mechanical strength and moisture resistance of the circuit elements constituting the above. The resin member 93 is arranged on the main surface 91b of the module board 91, covers a part of the transmission circuit, a part of the reception circuit, and the main surface 91b of the module board 91, and covers the transmission circuit and the reception circuit. It has a function to ensure reliability such as mechanical strength and moisture resistance of the circuit elements constituting the above. The resin members 92 and 93 are not essential components for the high frequency module according to the present invention.

As shown in FIGS. 2A and 2B, in the high frequency module 1A according to the present embodiment, the transmission power amplifier 11, duplexers 61, 62, matching circuits 31 and 41 are surface-mounted on the main surface 91a of the module substrate 91. .. On the other hand, the reception low noise amplifier 21, switches 51, 52, 53 and 54 are surface-mounted on the main surface 91b of the module board 91.

In this embodiment, the post-stage amplifier 11b (first transmission amplifier) is mounted on the main surface 91a. On the other hand, the switch 54 is mounted on the main surface 91b.

According to the above configuration, the post-stage amplifier 11b is arranged on the main surface 91a of the module board 91, and the switch 54 is arranged on the main surface 91b. That is, the post-stage amplifier 11b and the switch 54 are arranged so as to sandwich the module board 91. This suppresses electric field coupling, magnetic field coupling, or electromagnetic field coupling between the switch 54 arranged on the input side of the transmission power amplifier 11 and the output wiring of the subsequent amplifier 11b arranged on the output side of the transmission power amplifier 11. it can. Therefore, it is possible to prevent the transmission power amplifier 11 from oscillating due to the formation of an unnecessary feedback loop for transmitting a high frequency signal between the input and output of the transmission power amplifier 11. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 11.

It is desirable that the module substrate 91 has a multilayer structure in which a plurality of dielectric layers are laminated, and a ground electrode pattern 93G is formed on at least one of the plurality of dielectric layers. As a result, the electromagnetic field shielding function of the module substrate 91 is improved, and the isolation between the circuit element arranged on the main surface 91a and the circuit element arranged on the main surface 91b is improved.

Further, in the high frequency module 1A according to the present embodiment, the front stage amplifier 11a is mounted on the main surface 91a. That is, the front-stage amplifier 11a and the switch 54 are arranged so as to sandwich the module board 91. As a result, it is possible to prevent the switch 54 arranged on the input side of the transmission power amplifier 11 and the output wiring of the pre-stage amplifier 11a from being electrically coupled, magnetically coupled, or electromagnetically coupled. Therefore, an unnecessary feedback loop for transmitting a high frequency signal is formed between the input and output of the pre-stage amplifier 11a, and the oscillation of the pre-stage amplifier 11a can be suppressed. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 11.

In the high frequency module 1A according to the present embodiment, the post-stage amplifier 11b and the switch 54 may be arranged separately on the main surfaces 91a and 91b of the module board 91, and the other circuit components are the main surface 91a and the main surface 91a and 91b. It may be arranged in any of 91b, and may be built in the module board 91.

Further, in the high frequency module 1A according to the present embodiment, when the module substrate 91 is viewed in a plan view, it is desirable that the front stage amplifier 11a and the switch 54 overlap.

According to this, the pre-stage amplifier 11a and the switch 54 can be connected via the via conductor formed in the module substrate 91 along the direction (z-axis direction) perpendicular to the main surfaces 91a and 91b. Therefore, since the connection wiring between the pre-stage amplifier 11a and the switch 54 can be shortened, the transmission loss of the transmission signal can be reduced.

The matching circuits 31 and 41 are mounted on the main surface 91a of the module board 91. Each of the matching circuits 31 and 41 includes an inductor. The inductor included in the matching circuits 31 and 41 is composed of, for example, a chip-shaped inductor or a wiring pattern formed on the main surface 91a.

According to this, the matching circuit 31 is arranged on the main surface 91a of the module board 91, and the switch 54 is arranged on the main surface 91b. That is, the inductor of the matching circuit 31 and the switch 54 are arranged so as to sandwich the module board 91. As a result, it is possible to prevent the switch 54 arranged on the input side of the transmission power amplifier 11 and the inductor of the matching circuit 31 arranged on the output side of the transmission power amplifier 11 from being magnetically coupled or electromagnetically coupled. Therefore, it is possible to further suppress the oscillation of the transmission power amplifier 11 due to the formation of an unnecessary feedback loop for transmitting a high frequency signal between the input and output of the transmission power amplifier 11. Therefore, the unstable operation of the transmission power amplifier 11 can be further suppressed.

Further, in the high frequency module 1A according to the present embodiment, a plurality of external connection terminals 150 are arranged on the main surface 91b side of the module substrate 91. The high frequency module 1A exchanges electric signals with an external substrate arranged on the negative side of the z axis of the high frequency module 1A via a plurality of external connection terminals 150. Further, some of the plurality of external connection terminals 150 are set to the ground potential of the external substrate.

Further, in the high frequency module 1A according to the present embodiment, the transmission power amplifier 11 is mounted on the main surface 91a.

The transmission power amplifier 11 is a component having a large amount of heat generation among the circuit components included in the high frequency module 1A. In order to improve the heat dissipation of the high frequency module 1A, it is important to dissipate the heat generated by the transmission power amplifier 11 to the external substrate through a heat dissipation path having a small thermal resistance. If the transmission power amplifier 11 is mounted on the main surface 91b, the electrode wiring connected to the transmission power amplifier 11 is arranged on the main surface 91b. Therefore, the heat dissipation path includes the heat dissipation path only through the plane wiring pattern (along the xy plane direction) on the main surface 91b. Since the plane wiring pattern is formed of a metal thin film, it has a large thermal resistance. Therefore, when the transmission power amplifier 11 is arranged on the main surface 91b, the heat dissipation property is lowered.

On the other hand, when the transmission power amplifier 11 is mounted on the main surface 91a, the transmission power amplifier 11 and the external connection terminal 150 can be connected via a through electrode penetrating between the main surface 91a and the main surface 91b. .. Therefore, as the heat dissipation path of the transmission power amplifier 11, it is possible to eliminate the heat dissipation path through only the plane wiring pattern along the xy plane direction having a large thermal resistance among the wiring in the module substrate 91. Therefore, it is possible to provide a small high-frequency module 1A having improved heat dissipation from the transmission power amplifier 11 to the external substrate.

From the viewpoint of heat dissipation, it is desirable that the through electrode or the heat radiating member be arranged in the region of the main surface 91b facing the region of the main surface 91a in which the subsequent amplifier 11b is arranged. It is desirable that no circuit elements are arranged.

Further, in the high frequency module 1A according to the present embodiment, the reception low noise amplifier 21 is arranged on the main surface 91b.

According to this, since the transmission power amplifier 11 and the reception low noise amplifier 21 are arranged so as to sandwich the module board 91, it is possible to improve the isolation between transmission and reception.

Further, of the main surfaces 91a and 91b, the transmission power amplifier 11 which is difficult to reduce the height is not arranged on the main surface 91b facing the external board, and the reception low noise amplifier 21 which is easy to reduce the height and the reception low noise amplifier 21 Since the switches 51 to 54 are arranged, it is possible to reduce the height of the entire high frequency module 1A. Further, since a plurality of external connection terminals 150 applied as ground electrodes are arranged around the reception low noise amplifier 21 which greatly affects the reception sensitivity of the reception circuit, deterioration of the reception sensitivity of the reception circuit can be suppressed.

Further, as shown in FIGS. 2A and 2B, the reception low noise amplifier 21, the switches 52 and 53 may be incorporated in one semiconductor IC 20. As a result, the height of the main surface 91b in the z-axis direction can be reduced, and the component mounting area of the main surface 91b can be reduced. Therefore, the high frequency module 1A can be miniaturized. Further, the semiconductor IC 20 may include switches 51 and 54.

The external connection terminal 150 may be a columnar electrode penetrating the resin member 93 in the z-axis direction as shown in FIGS. 2A and 2B, or may be on the main surface 91b as shown in FIG. 2C. It may be the formed bump electrode 160. As shown in FIG. 2C, when the external connection terminal 150 is the bump electrode 160, the resin member 93 is not arranged on the main surface 91b.

Further, the external connection terminal 150 may be arranged on the main surface 91a.

[5. Circuit element arrangement configuration of high frequency module 1B according to the third embodiment]
FIG. 3A is a schematic plan view of the high frequency module 1B according to the third embodiment. Further, FIG. 3B is a schematic cross-sectional configuration diagram of the high-frequency module 1B according to the third embodiment, and specifically, is a cross-sectional view taken along the line IIIB-IIIB of FIG. 3A. Note that FIG. 3A shows an arrangement diagram of circuit elements when the main surface 91a is viewed from the z-axis positive direction side among the main surfaces 91a and 91b of the module substrate 91 facing each other. .. On the other hand, FIG. 3A (b) shows a perspective view of the arrangement of the circuit elements when the main surface 91b is viewed from the positive direction side of the z-axis.

The high-frequency module 1B according to the third embodiment specifically shows the arrangement configuration of each circuit element constituting the high-frequency module 1B according to the modified example of the embodiment shown in FIG. 1B.

In the high frequency module 1B according to the present embodiment, two transmission power amplifiers 12 and 13 and two matching circuits 31 and 32 are mounted on the module board 91 as compared with the high frequency module 1A according to the first embodiment. The point is different. Hereinafter, the same points as those of the high frequency module 1A according to the first embodiment of the high frequency module 1B according to the present embodiment will be omitted, and the differences will be mainly described.

The module substrate 91 has a main surface 91a (second main surface) and a main surface 91b (first main surface) facing each other, and is a substrate on which the transmission circuit and the reception circuit are mounted. As the module substrate 91, for example, an LTCC substrate having a laminated structure of a plurality of dielectric layers, an HTCC substrate, a component built-in substrate, a substrate having an RDL, a printed circuit board, or the like is used.

As shown in FIGS. 3A and 3B, in the high frequency module 1B according to the present embodiment, the transmission power amplifier 13, the duplexers 61, 62, the matching circuits 31, 32, 41, and the switch 55 are the main surfaces 91a of the module substrate 91. It is surface mounted on. On the other hand, the transmission power amplifier 12, the reception low noise amplifier 21, the switches 52 and 53 are surface-mounted on the main surface 91b of the module board 91.

In this embodiment, the post-stage amplifier 12b (first transmission amplifier) is mounted on the main surface 91b (first main surface). On the other hand, the switch 55 is mounted on the main surface 91a (second main surface).

According to the above configuration, the post-stage amplifier 12b is arranged on the main surface 91b of the module board 91, and the switch 55 is arranged on the main surface 91a. That is, the post-stage amplifier 12b and the switch 55 are arranged so as to sandwich the module board 91. As a result, it is possible to prevent the switch 55 arranged on the input side of the transmission power amplifier 12 and the output wiring of the subsequent amplifier 12b arranged on the output side of the transmission power amplifier 12 from being electrically coupled, magnetically coupled, or electromagnetically coupled. it can. Therefore, an unnecessary feedback loop for transmitting a high frequency signal is formed between the input and output of the transmission power amplifier 12, and the oscillation of the transmission power amplifier 12 can be suppressed. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 12.

Further, in the high frequency module 1A according to this embodiment, the front stage amplifier 12a is mounted on the main surface 91b. That is, the front-stage amplifier 12a and the switch 55 are arranged so as to sandwich the module board 91. As a result, it is possible to prevent the switch 55 arranged on the input side of the transmission power amplifier 12 and the output wiring of the pre-stage amplifier 11a from being electrically coupled, magnetically coupled, or electromagnetically coupled. Therefore, an unnecessary feedback loop for transmitting a high frequency signal is formed between the input and output of the pre-stage amplifier 12a, and the oscillation of the pre-stage amplifier 12a can be suppressed. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 12.

Further, in this embodiment, the post-stage amplifier 13b (third transmission amplifier) is mounted on the main surface 91a (second main surface).

As a result, the post-stage amplifier 12b that amplifies the transmission signal of the communication band A and the post-stage amplifier 13b that amplifies the transmission signal of the communication band B are arranged with the module board 91 interposed therebetween, so that isolation between different communication bands Can be improved.

Further, as shown in FIG. 3A, when the module substrate 91 is viewed in a plan view, it is desirable that the rear-stage amplifier 12b and the rear-stage amplifier 13b do not overlap.

As a result, a large distance between the rear-stage amplifier 12b and the rear-stage amplifier 13b can be secured, so that the isolation between different communication bands can be further improved.

In the high-frequency module 1B according to the present embodiment, the rear-stage amplifier 12b and the switch 55 are arranged separately on the main surfaces 91a and 91b of the module board 91, and the rear-stage amplifier 12b and the rear-stage amplifier 13b are arranged on the module board. It suffices that they are arranged separately on the main surfaces 91a and 91b of the 91, and other circuit components may be arranged on any of the main surfaces 91a and 91b, and further, even if they are built in the module board 91. Good.

Further, in the high frequency module 1B according to the present embodiment, when the module substrate 91 is viewed in a plan view, it is desirable that the front stage amplifier 12a and the switch 55 overlap.

According to this, the front stage amplifier 12a and the switch 55 can be connected via a via conductor formed in the module substrate 91 along the direction perpendicular to the main surfaces 91a and 91b (z-axis direction). Therefore, since the connection wiring between the pre-stage amplifier 12a and the switch 55 can be shortened, the transmission loss of the transmission signal of the communication band A can be reduced.

Further, in the high frequency module 1B according to the present embodiment, a plurality of external connection terminals 150 are arranged on the main surface 91b side of the module board 91. The high frequency module 1B exchanges electric signals with an external substrate arranged on the negative side of the z axis of the high frequency module 1B via a plurality of external connection terminals 150. Further, some of the plurality of external connection terminals 150 are set to the ground potential of the external substrate.

Further, in the high frequency module 1B according to the present embodiment, the transmission power amplifier 13 is mounted on the main surface 91a.

The transmission power amplifier 13 is a component having a large amount of heat generation among the circuit components included in the high frequency module 1A. In order to improve the heat dissipation of the high frequency module 1B, it is important to dissipate the heat generated by the transmission power amplifier 13 to the external substrate through a heat dissipation path having a small thermal resistance. When the transmission power amplifier 13 is mounted on the main surface 91a, the transmission power amplifier 13 and the external connection terminal 150 can be connected via a through electrode penetrating between the main surface 91a and the main surface 91b. Therefore, as the heat dissipation path of the transmission power amplifier 13, it is possible to eliminate the heat dissipation path via only the plane wiring pattern along the xy plane direction having a large thermal resistance among the wiring in the module substrate 91. Therefore, it is possible to provide a small high-frequency module 1B having improved heat dissipation from the transmission power amplifier 13 to the external substrate.

From the viewpoint of heat dissipation, it is desirable that the through electrode or the heat radiating member be arranged in the region of the main surface 91b facing the region of the main surface 91a in which the post-stage amplifier 13b is arranged. It is desirable that no circuit elements are arranged.

Further, in the high frequency module 1B according to the present embodiment, the reception low noise amplifier 21 is arranged on the main surface 91b.

According to this, since the transmission power amplifier 13 and the reception low noise amplifier 21 are arranged so as to sandwich the module substrate 91, it is possible to improve the isolation between transmission and reception in the communication band B.

Further, on the main surface 91b, a plurality of external connection terminals 150 applied as ground electrodes are arranged around the reception low noise amplifier 21 which greatly affects the reception sensitivity of the reception circuit, so that the reception sensitivity of the reception circuit is deteriorated. Can be suppressed.

Further, as shown in FIGS. 3A and 3B, the reception low noise amplifier 21, the switches 52 and 53 may be incorporated in one semiconductor IC 20. As a result, the component mounting area of the main surface 91b can be reduced. Therefore, the high frequency module 1B can be miniaturized.

The external connection terminal 150 may be a bump electrode 160 formed on the main surface 91b. In this case, the resin member 93 is not arranged on the main surface 91b.

Further, the external connection terminal 150 may be arranged on the main surface 91a.

[6. Circuit element arrangement configuration of the high frequency module 1D according to the fourth embodiment]
FIG. 4A is a schematic plan view of the high frequency module 1D according to the fourth embodiment. Further, FIG. 4B is a schematic cross-sectional configuration diagram of the high frequency module 1D according to the fourth embodiment, and specifically, is a cross-sectional view taken along the line IVB-IVB of FIG. 4A. Note that FIG. 4A shows an arrangement diagram of circuit elements when the main surface 91a is viewed from the z-axis positive direction side among the main surfaces 91a and 91b of the module substrate 91 facing each other. .. On the other hand, FIG. 4A (b) shows a perspective view of the arrangement of the circuit elements when the main surface 91b is viewed from the positive direction side of the z-axis.

The high-frequency module 1D according to the fourth embodiment specifically shows the arrangement configuration of each circuit element constituting the high-frequency module 1A according to the embodiment shown in FIG. 1A.

The high-frequency module 1D according to the present embodiment is different from the high-frequency module 1A according to the first embodiment in particular in the arrangement configuration of the duplexers 61 and 62 and the switch 53. Hereinafter, the same points as those of the high frequency module 1A according to the first embodiment of the high frequency module 1D according to the present embodiment will be omitted, and the differences will be mainly described.

The module substrate 91 has a main surface 91a (first main surface) and a main surface 91b (second main surface) facing each other, and is a substrate on which the transmission circuit and the reception circuit are mounted. As the module substrate 91, an LTCC substrate having a laminated structure of a plurality of dielectric layers, an HTCC substrate, a component built-in substrate, a substrate having an RDL, a printed circuit board, or the like is used. The module substrate 91 according to this embodiment is composed of dielectric layers L1, L2, L3, L4, L5, L6 and L7 in order from the main surface 91a side. Each of the dielectric layers L4 and L5 is thicker than the dielectric layers L1, L2, L3, L6 and L7, respectively, and is an inner layer rather than a surface layer of the main surfaces 91a and 91b. The dielectric layer L4 is a layer located at the center of the plurality of dielectric layers included in the module substrate 91, and the dielectric layer L5 is a layer adjacent to the layer located at the center.

As shown in FIGS. 4A and 4B, in the high frequency module 1D according to this embodiment, the transmission power amplifier 11, the matching circuits 31 and 41, and the switch 53 are arranged on the main surface 91a of the module substrate 91. On the other hand, the duplexers 61 and 62, the reception low noise amplifier 21, the switches 51, 52 and 54 are arranged on the main surface 91b of the module board 91.

In this embodiment, the post-stage amplifier 11b (first transmission amplifier) is mounted on the main surface 91a (first main surface). On the other hand, the switch 54 is mounted on the main surface 91b (second main surface).

According to the above configuration, the post-stage amplifier 11b is arranged on the main surface 91a of the module board 91, and the switch 54 is arranged on the main surface 91b. That is, the post-stage amplifier 11b and the switch 54 are arranged so as to sandwich the module board 91. This suppresses electric field coupling, magnetic field coupling, or electromagnetic field coupling between the switch 54 arranged on the input side of the transmission power amplifier 11 and the output wiring of the subsequent amplifier 11b arranged on the output side of the transmission power amplifier 11. it can. Therefore, it is possible to prevent the transmission power amplifier 11 from oscillating due to the formation of an unnecessary feedback loop for transmitting a high frequency signal between the input and output of the transmission power amplifier 11. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 11.

Further, in the high frequency module 1D according to the present embodiment, the transmission power amplifier 11 and the duplexers 61 and 62 are arranged on different main surfaces.

As shown in FIG. 4B, a part of the wiring W11 (first wiring) connecting the post-stage amplifier 11b and the switch 51 via the matching circuit 31 is a dielectric layer L4 (first inner layer) having a relatively thick layer thickness. ) Is formed. Further, a part of the wiring W61 (second wiring) connecting the duplexer 61 and the switch 51 is formed in the dielectric layer L5 (second inner layer) having a relatively thick layer thickness. Further, a part of the wiring W62 (second wiring) connecting the duplexer 62 and the switch 51 is formed in the dielectric layer L4 (second inner layer) having a relatively thick layer thickness.

Further, the ground electrode pattern 93G1 is arranged on the dielectric layer L3 adjacent to the dielectric layer L4, and the ground electrode pattern 93G2 is arranged on the dielectric layer L6 adjacent to the dielectric layer L5. As shown in FIG. 4B, the ground electrode patterns 93G1 and 93G2 form a part of the wiring W11 and a part of the wiring W62 formed on the dielectric layer L4, and a part of the wiring W61 formed on the dielectric layer L5. It is arranged so as to sandwich it. Further, the ground electrode patterns 93G1 and 93G2 are a part of the wiring W11 formed on the dielectric layer L4, a part of the wiring W62, and the wiring formed on the dielectric layer L5 when the module substrate 91 is viewed in a plan view. It overlaps with W61.

According to the above configuration, since the parasitic capacitance of the wiring W11, the wiring W61 and the wiring W62 is suppressed, the transmission loss of the wiring W11, the wiring W61 and the wiring W62 can be reduced. Therefore, the transmission loss of the transmission signal output from the transmission power amplifier 11 can be reduced.

The wiring width of a part of the wiring W11 formed on the dielectric layer L4 is equal to or less than the wiring width of a part of the wiring W11 formed on the surface layers of the main surfaces 91a and 91b, and is formed on the dielectric layer L4. It is desirable that the wiring length of a part of the wiring W11 is equal to or larger than the wiring length of a part of the wiring W11 formed on the surface layers of the main surfaces 91a and 91b. Further, the wiring width of a part of the wiring W62 formed on the dielectric layer L4 is equal to or less than the wiring width of a part of the wiring W62 formed on the surface layers of the main surfaces 91a and 91b, and is formed on the dielectric layer L4. It is desirable that the wiring length of a part of the wiring W62 is equal to or larger than the wiring length of a part of the wiring W62 formed on the surface layers of the main surfaces 91a and 91b. Further, the wiring width of a part of the wiring W61 formed on the dielectric layer L5 is equal to or less than the wiring width of a part of the wiring W61 formed on the surface layers of the main surfaces 91a and 91b, and is formed on the dielectric layer L5. It is desirable that the wiring length of a part of the wiring W61 is equal to or larger than the wiring length of a part of the wiring W61 formed on the surface layers of the main surfaces 91a and 91b.

When the wiring length of a part of the wiring W11 formed on the surface layers of the main surfaces 91a and 91b is longer than the wiring length of a part of the wiring W11 formed on the dielectric layer L4, the surface layer is covered. In the adjacent dielectric layer, it is desirable that the ground electrode plane is not formed in the region directly below a part of the wiring of the wiring W11 formed on the surface layer. Further, it is desirable that the wiring W61 and the wiring W62 have the same configuration.

Only one of a part of the wiring W61 connecting the duplexer 61 and the switch 51 and a part of the wiring W62 connecting the duplexer 62 and the switch 51 is an inner layer having a relatively thick layer thickness. It may be formed. In this case, it is desirable to form the wiring through which the higher frequency signal is passed among the wiring W61 and the wiring 62 in the inner layer having a relatively thick layer thickness.

According to this, since the parasitic capacitance of the wiring that can generate a large parasitic capacitance among the wiring W61 and the wiring W62 can be suppressed, the transmission loss of the wiring W61 or the wiring W62 can be reduced more effectively.

Further, in the high frequency module 1D according to the present embodiment, the switch 53 (antenna switch) is arranged on the main surface 91a, and the duplexers 61 and 62 are arranged on the main surface 91b. As shown in FIG. 4A, when the module substrate 91 is viewed in a plan view, the switch 53 and the duplexers 61 and 62 overlap at least partially.

According to this, since the wiring connecting the switch 53 and the duplexers 61 and 62 can be shortened, the transmission loss can be reduced and the size can be reduced.

[7. Effect etc.]
As described above, the high-frequency module 1A according to the present embodiment amplifies the module board 91 having the main surfaces 91a and 91b facing each other, the transmission input terminals 111 and 112, and the transmission signal input from the transmission input terminal 111 or 112. The post-stage amplifier 11b is provided with a switch 54 for switching the connection and disconnection between the transmission input terminals 111 and 112 and the rear-stage amplifier 11b. The rear-stage amplifier 11b is arranged on the main surface 91a, and the switch 54 is on the main surface. Have been placed.

According to this, the post-stage amplifier 11b and the switch 54 are arranged so as to sandwich the module board 91. This suppresses electric field coupling, magnetic field coupling, or electromagnetic field coupling between the switch 54 arranged on the input side of the transmission power amplifier 11 and the output wiring of the subsequent amplifier 11b arranged on the output side of the transmission power amplifier 11. it can. Therefore, it is possible to prevent the transmission power amplifier 11 from oscillating due to the formation of an unnecessary feedback loop for transmitting a high frequency signal between the input and output of the transmission power amplifier 11. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 11.

Further, the high frequency module 1A may further include a front stage amplifier 11a connected between the input terminal of the rear stage amplifier 11b and the switch 54.

Further, the front stage amplifier 11a may be arranged on the main surface 91a.

As a result, it is possible to prevent the switch 54 arranged on the input side of the transmission power amplifier 11 and the output wiring of the pre-stage amplifier 11a from being electrically coupled, magnetically coupled, or electromagnetically coupled. Therefore, an unnecessary feedback loop for transmitting a high frequency signal is formed between the input and output of the pre-stage amplifier 11a, and the oscillation of the pre-stage amplifier 11a can be suppressed. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 11.

Further, when the module board 91 is viewed in a plan view, the front-stage amplifier 11a and the switch 54 may overlap at least partially.

According to this, the pre-stage amplifier 11a and the switch 54 can be connected in the module substrate 91 via a via conductor formed in the direction perpendicular to the main surfaces 91a and 91b (z-axis direction). Therefore, since the connection wiring between the pre-stage amplifier 11a and the switch 54 can be shortened, the transmission loss of the transmission signal can be reduced.

Further, the high frequency module 1A may further include a matching circuit 31 connected to the output terminal of the post-stage amplifier 11b, the matching circuit 31 may include an inductor, and the inductor may be arranged on the main surface 91a.

According to this, the inductor of the matching circuit 31 and the switch 54 are arranged so as to sandwich the module board 91. As a result, it is possible to prevent the switch 54 arranged on the input side of the transmission power amplifier 11 and the inductor of the matching circuit 31 arranged on the output side of the transmission power amplifier 11 from being magnetically coupled or electromagnetically coupled. Therefore, it is possible to further suppress the oscillation of the transmission power amplifier 11 due to the formation of an unnecessary feedback loop for transmitting a high frequency signal between the input and output of the transmission power amplifier 11. Therefore, the unstable operation of the transmission power amplifier 11 can be further suppressed.

Further, the high frequency module 1A may further include an external connection terminal 150, and the external connection terminal 150 may be arranged on the main surface 91b.

Further, the antenna connection terminal 100 and the reception low noise amplifier 21 that amplifies the reception signal input from the antenna connection terminal 100 may be provided, and the reception low noise amplifier 21 may be arranged on the main surface 91b.

According to this, since the transmission power amplifier 11 and the reception low noise amplifier 21 are arranged so as to sandwich the module board 91, it is possible to improve the isolation between transmission and reception. Further, of the main surfaces 91a and 91b, the transmission power amplifier 11 which is difficult to reduce the height is not arranged on the main surface 91b facing the external board, and the reception low noise amplifier 21 which is easy to reduce the height is arranged. Therefore, it is possible to reduce the height of the entire high frequency module 1A. Further, since a plurality of external connection terminals 150 applied as ground electrodes are arranged around the reception low noise amplifier 21 which greatly affects the reception sensitivity of the reception circuit, deterioration of the reception sensitivity of the reception circuit can be suppressed.

Further, the high frequency module 1D is further arranged on the main surface 91b and is arranged on the main surface 91b to pass the transmission signal output from the rear stage amplifier 11b, and is arranged on the main surface 91b to connect the transmission filter 61T and the rear stage amplifier 11b. The module substrate 91 has a structure in which a plurality of dielectric layers L1 to L7 are laminated, and at least a part of the wiring W11 connecting the post-stage amplifier 11b and the switch 51. Is arranged in the dielectric layer L4 excluding the surface layers formed on the main surfaces 91a and 91b among the plurality of dielectric layers L1 to L7, and is at least a part of the wiring W61 connecting the transmission filter 61T and the switch 51. Is arranged in the dielectric layer L5 excluding the surface layer among the plurality of dielectric layers L1 to L7, and the dielectric layers L4 and L5 are thicker than the other dielectric layers and are adjacent to the dielectric layer L4. Ground electrode patterns 93G1 and 93G2 are formed on the body layer L3 and the dielectric layer L6 adjacent to the dielectric layer L5, and when the module substrate 91 is viewed in a plan view, at least a part of W11 and W61 At least a part of the above may overlap with the ground electrode patterns 93G1 and 93G2.

According to this, since the parasitic capacitance of the wiring W11 and the wiring W61 is suppressed, the transmission loss of the wiring W11 and the wiring W61 can be reduced. Therefore, the transmission loss of the transmission signal output from the transmission power amplifier 11 can be reduced.

Further, the high frequency module 1D further includes a switch 53 arranged on the main surface 91a and connected to the output terminal of the transmission filter 61T, and when the module board 91 is viewed in a plan view, the switch 53 and the transmission filter 61T are at least Some parts may overlap.

According to this, the wiring connecting the switch 53 and the transmission filter 61T can be shortened, so that transmission loss can be reduced and miniaturization can be achieved.

Further, in the high frequency module 1B according to this modification, the post-stage amplifier 12b amplifies the transmission signal of the communication band A input from the transmission input terminal 110, and the post-stage amplifier 13b a communication band input from the transmission input terminal 110. The transmission signal of B may be amplified, and in the high frequency module 1B, the post-stage amplifier 12b may be arranged on the main surface 91b, and the post-stage amplifier 13b and the switch 55 may be arranged on the main surface 91a.

According to this, the post-stage amplifier 12b and the switch 55 are arranged so as to sandwich the module board 91. As a result, it is possible to prevent the switch 55 arranged on the input side of the transmission power amplifier 12 and the output wiring of the subsequent amplifier 12b arranged on the output side of the transmission power amplifier 12 from being electrically coupled, magnetically coupled, or electromagnetically coupled. it can. Therefore, an unnecessary feedback loop for transmitting a high frequency signal is formed between the input and output of the transmission power amplifier 12, and the oscillation of the transmission power amplifier 12 can be suppressed. Therefore, it is possible to suppress the unstable operation of the transmission power amplifier 12. Further, since the post-stage amplifier 12b that amplifies the transmission signal of the communication band A and the post-stage amplifier 13b that amplifies the transmission signal of the communication band B are arranged so as to sandwich the module board 91, isolation between different communication bands can be performed. It is possible to improve.

Further, when the module board 91 is viewed in a plan view, it is desirable that the rear-stage amplifier 12b and the rear-stage amplifier 13b do not overlap.

As a result, a large distance between the rear-stage amplifier 12b and the rear-stage amplifier 13b can be secured, so that the isolation between different communication bands can be further improved.

Further, the high frequency module 1B may further include an external connection terminal 150, and the external connection terminal may be arranged on the main surface 91b.

Further, the high frequency module 1B further includes an antenna connection terminal 100 and a reception low noise amplifier 21 that amplifies the reception signal input from the antenna connection terminal 100, and the reception low noise amplifier 21 is arranged on the main surface 91b. You may be.

According to this, since the transmission power amplifier 13 and the reception low noise amplifier 21 are arranged so as to sandwich the module board 91, it is possible to improve the isolation between transmission and reception. Further, since a plurality of external connection terminals 150 applied as ground electrodes are arranged around the reception low noise amplifier 21 which greatly affects the reception sensitivity of the reception circuit, deterioration of the reception sensitivity of the reception circuit can be suppressed.

Further, the communication device 5A includes an antenna 2, an RFIC 3 that processes a high frequency signal transmitted and received by the antenna 2, and a high frequency module 1A that transmits a high frequency signal between the antenna 2 and the RFIC 3.

This makes it possible to suppress the unstable operation of the transmission power amplifier 11.

(Other embodiments, etc.)
The high-frequency module and communication device according to the embodiment of the present invention have been described above with reference to embodiments, modifications, and examples. However, the high-frequency module and communication device according to the present invention have the above-described embodiments and modifications. It is not limited to Examples and Examples. To the extent that the gist of the present invention is not deviated from the above-described embodiment, modification, and another embodiment realized by combining arbitrary components in the embodiment, and the above-described embodiment, modification, and embodiment. The present invention also includes various modifications obtained by performing various modifications that can be conceived by those skilled in the art, and various devices incorporating the above-mentioned high-frequency module and communication device.

For example, in the high-frequency module and communication device according to the above-described embodiment, modification, and embodiment, another circuit element, wiring, or the like is inserted between the paths connecting each circuit element and signal path disclosed in the drawings. You may be.

INDUSTRIAL APPLICABILITY The present invention can be widely used in communication devices such as mobile phones as a high-frequency module arranged in a multi-band compatible front end portion.

1, 1A, 1B, 1C, 1D radio frequency module 2 antenna 3 RF signal processing circuit (RFIC)
4 Baseband signal processing circuit (BBIC)
5A, 5B communication device 11, 12, 13 Transmission power amplifier 11a, 12a, 13a Pre-stage amplifier 11b, 12b, 13b Post-stage amplifier 20 Semiconductor IC
21 Reception low noise amplifier 31, 32, 41 Matching circuit 51, 52, 53, 54, 55 Switch 61, 62 Duplexer 61R, 62R Reception filter 61T, 62T Transmission filter 91 Module board 91a, 91b Main surface 92, 93 Resin member 93G , 93G1, 93G2 Ground electrode pattern 100 Antenna connection terminal 110, 111, 112 Transmission input terminal 120 Reception output terminal 150 External connection terminal 160 Bump electrode

Claims (14)

A module board having a first main surface and a second main surface facing each other,
Transmission input terminal and
A first transmission amplifier that amplifies the transmission signal input from the transmission input terminal, and
A first switch for switching between connection and non-connection between the transmission input terminal and the first transmission amplifier is provided.
The first transmission amplifier is arranged on the first main surface.
The first switch is arranged on the second main surface.
High frequency module. Further, a second transmission amplifier connected between the input terminal of the first transmission amplifier and the first switch is provided.
The high frequency module according to claim 1. The second transmission amplifier is arranged on the first main surface.
The high frequency module according to claim 2. When the module board is viewed in a plan view, the second transmission amplifier and the first switch overlap at least partially.
The high frequency module according to claim 3. further,
An impedance matching circuit connected to the output terminal of the first transmission amplifier is provided.
The impedance matching circuit includes an inductor and
The inductor is arranged on the first main surface,
The high frequency module according to any one of claims 1 to 4. In addition, it has an external connection terminal
The external connection terminal is arranged on the second main surface.
The high frequency module according to any one of claims 1 to 5. further,
Antenna connection terminal and
A reception amplifier that amplifies the reception signal input from the antenna connection terminal is provided.
The receiving amplifier is arranged on the second main surface.
The high frequency module according to claim 6. further,
A transmission filter arranged on the second main surface and passing a transmission signal output from the first transmission amplifier,
A second switch, which is arranged on the second main surface and switches the connection and disconnection between the transmission filter and the first transmission amplifier, is provided.
The module substrate has a structure in which a plurality of dielectric layers are laminated.
At least a part of the first wiring connecting the first transmission amplifier and the second switch is a first of the plurality of dielectric layers excluding the surface layer formed on the first main surface and the second main surface. 1 Located in the inner layer,
At least a part of the second wiring connecting the transmission filter and the second switch is arranged in the second inner layer of the plurality of dielectric layers excluding the surface layer.
The first inner layer and the second inner layer are thicker than the other dielectric layers.
A ground electrode pattern is formed on the dielectric layer adjacent to the first inner layer and the dielectric layer adjacent to the second inner layer.
When the module substrate is viewed in a plan view, at least a part of the first wiring and at least a part of the second wiring overlap with the ground electrode pattern.
The high frequency module according to any one of claims 1 to 7. further,
It is provided with an antenna switch arranged on the first main surface and connected to the output terminal of the transmission filter.
When the module board is viewed in a plan view, the antenna switch and the transmission filter are at least partially overlapped with each other.
The high frequency module according to claim 8. The first transmission amplifier amplifies the transmission signal of the first communication band input from the transmission input terminal, and amplifies the transmission signal.
The high frequency module further
A third transmission amplifier for amplifying a transmission signal of the second communication band input from the transmission input terminal is provided.
The third transmission amplifier is arranged on the second main surface.
The high frequency module according to any one of claims 1 to 5. When the module board is viewed in a plan view, the first transmission amplifier and the third transmission amplifier do not overlap.
The high frequency module according to claim 10. In addition, it has an external connection terminal
The external connection terminal is arranged on the first main surface.
The high frequency module according to claim 10 or 11. further,
Antenna connection terminal and
A reception amplifier that amplifies the reception signal input from the antenna connection terminal is provided.
The receiving amplifier is arranged on the first main surface.
The high frequency module according to claim 12. With the antenna
An RF signal processing circuit that processes high-frequency signals transmitted and received by the antenna,
The high-frequency module according to any one of claims 1 to 13 for transmitting the high-frequency signal between the antenna and the RF signal processing circuit.
Communication device.

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