KR102409702B1 - Organic Light Emitting Diode Display Device - Google Patents

Abstract

The organic light emitting diode display device of the present invention includes a light emitting diode emitting white light and a color filter including a color filter pattern and a color conversion pattern, thereby improving color purity to realize high color reproduction and improve light efficiency. In addition, by using a cyan and/or magenta color filter in addition to the red, green, and blue color filters, more colors can be expressed and color gamut can be further increased.

Description

Organic Light Emitting Diode Display Device

The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display capable of improving color gamut and light efficiency.

Recently, a flat panel display having excellent characteristics such as reduction in thickness, weight reduction, and low power consumption has been widely developed and applied to various fields.

Among flat panel display devices, an organic light emitting diode display device (OLED display device), also called an organic electroluminescent display device or an organic electroluminescent display device, includes a cathode and a hole as electron injection electrodes. It is a device that emits light by injecting electric charge into the light emitting layer formed between the anode, which is the injection electrode, and extinguishing after pairing of electrons and holes. Such an organic light emitting diode display can be formed on a flexible substrate such as plastic, and because it is a self-luminous type, the contrast ratio is large, and the response time is several microseconds (㎲), so moving images are realized. This is easy, there is no restriction on the viewing angle, and it is stable even at low temperatures, and it can be driven with a relatively low voltage of 5V to 15V of DC, so it is easy to manufacture and design a driving circuit.

The organic light emitting diode display can be divided into a passive matrix type and an active matrix type according to the driving method. is being used

In such an organic light emitting diode display, one pixel includes red, green, and blue sub-pixels, and each of the red, green, and blue sub-pixels includes an organic light emitting layer emitting red, green, and blue light, respectively. , displays an image by combining the light emitted from each sub-pixel.

However, the organic light emitting layers emitting red, green, and blue light are formed of different materials and have different characteristics. Accordingly, there is a problem that the red, green, and blue sub-pixels have different luminous efficiencies and have different lifetimes.

In order to solve this problem, a structure using a color filter in an organic light emitting diode display has been proposed.

That is, one pixel includes red, green, and blue sub-pixels, each of red, green, and blue sub-pixels includes an organic light emitting layer emitting white light, and red, green, and blue sub-pixels are red, green, and blue, respectively. Including the color filter, white light emitted from each sub-pixel passes through the red, green, and blue color filters to output red, green, and blue light, and displays an image by combining red, green, and blue light. In this case, in order to realize an accurate color, color matching between the white light emitted from the organic light emitting layer and the color filter is required.

The color filter is widely used in liquid crystal display devices. The white light output from the light source of the liquid crystal display device and the white light output from the organic light emitting layer of the organic light emitting diode display device have peak positions and band widths of red, green, and blue lights. width) is different. Accordingly, when a general color filter is applied to an organic light emitting diode display device, there is a problem of low color gamut.

In addition, since the color filter absorbs light corresponding to a color of a different wavelength band, there is a problem in that light efficiency is lowered.

The present invention has been proposed to solve the above problems, and aims to solve the problems of low color reproducibility and low light efficiency of an organic light emitting diode display device.

In order to achieve the above object, an organic light emitting diode display device of the present invention includes a light emitting diode emitting white light and red, green, blue, and cyan color filters, and the green color filter includes a cyan color filter pattern and green conversion. pattern, and the cyan color filter includes a cyan color filter pattern.

In this case, the red color filter may include a red color filter pattern.

Meanwhile, the organic light emitting diode display device of the present invention may further include a magenta color filter. In this case, the red color filter includes a magenta color filter pattern and a red conversion pattern, and the magenta color filter includes a magenta color filter. A filter pattern may be included.

The organic light emitting diode display device of the present invention may be a top light emitting type in which the organic light emitting diode is positioned between the thin film transistor and the color filter, and light from the organic light emitting layer is output through the cathode and the color filter.

Alternatively, the organic light emitting diode display device of the present invention may be a bottom light emitting type in which the color filter is positioned between the substrate and the organic light emitting diode, and light from the organic light emitting layer is output through the anode and the color filter.

In the present invention, by applying a color filter including a color filter pattern and a color conversion pattern to the organic light emitting diode display device, color purity and light efficiency can be improved, and color gamut can be increased.

In addition, by adding a sub-pixel that outputs cyan and/or magenta light in addition to the sub-pixel that outputs red, green, and blue light, more colors can be expressed and color gamut can be further increased.

1 is a circuit diagram of one pixel region of an organic light emitting diode display according to an embodiment of the present invention.
2 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to an embodiment of the present invention, and shows a structure corresponding to one pixel area.
3 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to a first embodiment of the present invention, showing an area corresponding to one pixel.
4 is a diagram schematically illustrating an arrangement structure of one pixel of an organic light emitting diode display device according to a first exemplary embodiment of the present invention.
5 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to a second embodiment of the present invention, showing an area corresponding to one pixel.
6 to 8 are diagrams schematically illustrating an arrangement structure of one pixel of an organic light emitting diode display according to a second exemplary embodiment of the present invention.
9 is a view showing the color gamut of the organic light emitting diode display according to the second embodiment of the present invention on the CIE 1976 chromaticity distribution diagram.
10 is a cross-sectional view schematically illustrating an organic light emitting diode display according to a third exemplary embodiment of the present invention, showing an area corresponding to one pixel.

The organic light emitting diode display device of the present invention includes a substrate on which pixels including first, second, third, and fourth sub-pixels are defined, and the first, second, third, and fourth sub-pixels on the substrate. a thin film transistor positioned in each region of , an organic light emitting diode connected to the thin film transistor, and first, second, third and a color filter layer including first, second, third, and fourth color filters each outputting light of a fourth color, wherein the second color filter absorbs the light of the first color and the second color filter and a color filter pattern that passes light of a third color and a color conversion pattern that converts light of the third color into light of the second color.

The fourth color filter includes a color filter pattern that absorbs the light of the first color and transmits the light of the second and third colors.

The first color filter includes a color filter pattern that passes the light of the first color and absorbs the light of the second and third colors.

The first color filter includes a color filter pattern that absorbs the light of the second color and passes the light of the first and third colors, and converts the light of the second and third colors into the light of the first color. Includes color conversion patterns.

The pixel further includes a fifth sub-pixel, and the color filter layer further includes a fifth color filter positioned in the region of the fifth sub-pixel and outputting light of a fifth color, wherein the fifth color filter includes the second color filter. and a color filter pattern that absorbs light of two colors and transmits light of the first and third colors.

The light of the first, second, and third colors is red, green, and blue light, respectively.

The pixel further includes at least one sub-pixel that outputs white light.

The organic light emitting diode is positioned between the substrate and the color filter layer.

Alternatively, the color filter layer is positioned between the substrate and the organic light emitting diode.

Hereinafter, an organic light emitting diode display device according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel region of an organic light emitting diode display according to an embodiment of the present invention.

As shown in FIG. 1 , the organic light emitting diode display device according to an embodiment of the present invention includes a gate line GL and a data line DL that cross each other and define a pixel region P, and each pixel In the region P, a switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and an organic light emitting diode De are formed.

In more detail, the gate electrode of the switching thin film transistor Ts is connected to the gate line GL and the source electrode is connected to the data line DL. The gate electrode of the driving thin film transistor Td is connected to the drain electrode of the switching thin film transistor Ts, and the source electrode is connected to the high potential voltage VDD. The anode of the organic light emitting diode De is connected to the drain electrode of the driving thin film transistor Td, and the cathode is connected to the low potential voltage VSS. The storage capacitor Cst is connected to the gate electrode and the drain electrode of the driving thin film transistor Td.

Looking at the image display operation of the organic light emitting diode display, the switching thin film transistor Ts is turned on according to the gate signal applied through the gate wiring GL, and at this time, the data line DL is turned on. The applied data signal is applied to the gate electrode of the driving thin film transistor Td and one electrode of the storage capacitor Cst through the switching thin film transistor Ts.

The driving thin film transistor Td is turned on according to the data signal to control the current flowing through the organic light emitting diode De to display an image. The organic light emitting diode De emits light by the current of the high potential voltage VDD transmitted through the driving thin film transistor Td.

That is, since the amount of current flowing through the organic light emitting diode De is proportional to the size of the data signal, and the intensity of light emitted from the organic light emitting diode De is proportional to the amount of current flowing through the organic light emitting diode De, the pixel The region P displays different gradations according to the size of the data signal, and as a result, the organic light emitting diode display displays an image.

The storage capacitor Cst maintains a charge corresponding to the data signal for one frame to keep the amount of current flowing through the organic light emitting diode De constant and to maintain a constant gradation level displayed by the organic light emitting diode De. serves to make

2 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to an embodiment of the present invention, and shows a structure corresponding to one pixel area.

As shown in FIG. 2 , a patterned semiconductor layer 122 is formed on the insulating substrate 110 . The substrate 110 may be a glass substrate or a plastic substrate. The semiconductor layer 122 may be made of an oxide semiconductor material. In this case, a light blocking pattern (not shown) and a buffer layer (not shown) may be formed under the semiconductor layer 122 , and the light blocking pattern is formed by the semiconductor layer 122 . ) to prevent the semiconductor layer 122 from being deteriorated by the light. Alternatively, the semiconductor layer 122 may be made of polycrystalline silicon, and in this case, both edges of the semiconductor layer 122 may be doped with impurities.

A gate insulating layer 130 made of an insulating material is formed on the entire surface of the substrate 110 on the semiconductor layer 122 . The gate insulating layer 130 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ). When the semiconductor layer 122 is made of polysilicon, the gate insulating layer 130 may be formed of silicon oxide (SiO ₂ ) or silicon nitride (SiNx).

A gate electrode 132 made of a conductive material such as metal is formed on the gate insulating layer 130 to correspond to the center of the semiconductor layer 122 . Also, a gate line (not shown) and a first capacitor electrode (not shown) may be formed on the gate insulating layer 130 . The gate wiring extends along the first direction, and the first capacitor electrode is connected to the gate electrode 132 .

Meanwhile, in the embodiment of the present invention, the gate insulating layer 130 is formed on the entire surface of the substrate 110 , but the gate insulating layer 130 may be patterned in the same shape as the gate electrode 132 .

An interlayer insulating film 140 made of an insulating material is formed on the entire surface of the substrate 110 on the gate electrode 132 . The insulating interlayer 140 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx), or an organic insulating material such as photo acryl or benzocyclobutene. .

The interlayer insulating layer 140 has first and second contact holes 140a and 140b exposing upper surfaces of both sides of the semiconductor layer 122 . The first and second contact holes 140a and 140b are positioned on both sides of the gate electrode 132 to be spaced apart from the gate electrode 132 . Here, the first and second contact holes 140a and 140b are also formed in the gate insulating layer 130 . In contrast, when the gate insulating layer 130 is patterned to have the same shape as the gate electrode 132 , the first and second contact holes 140a and 140b are formed only in the interlayer insulating layer 140 .

Source and drain electrodes 142 and 144 made of a conductive material such as metal are formed on the interlayer insulating layer 140 . In addition, a data line (not shown), a power line (not shown), and a second capacitor electrode (not shown) extending in the second direction may be formed on the interlayer insulating layer 140 .

The source and drain electrodes 142 and 144 are spaced apart from the center of the gate electrode 132 and contact both sides of the semiconductor layer 122 through the first and second contact holes 140a and 140b, respectively. Although not shown, the data line extends along the second direction and intersects the gate line to define each pixel area, and the power line for supplying a high potential voltage is spaced apart from the data line. The second capacitor electrode is connected to the drain electrode 144 , and overlaps the first capacitor electrode to form a storage capacitor with the interlayer insulating layer 140 therebetween as a dielectric material.

Meanwhile, the semiconductor layer 122 , the gate electrode 132 , and the source and drain electrodes 142 and 144 form a thin film transistor. Here, the thin film transistor has a coplanar structure in which the gate electrode 132 and the source and drain electrodes 142 and 144 are positioned on one side of the semiconductor layer 122 , that is, on the semiconductor layer 122 .

Alternatively, the thin film transistor may have an inverted staggered structure in which the gate electrode is positioned under the semiconductor layer and source and drain electrodes are positioned above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon.

Here, the thin film transistor corresponds to a driving thin film transistor of the organic light emitting diode display, and a switching thin film transistor (not shown) having the same structure as the driving thin film transistor is further formed on the substrate 110 to correspond to each pixel area. The gate electrode 132 of the driving thin film transistor is connected to a drain electrode (not shown) of the switching thin film transistor, and the source electrode 142 of the driving thin film transistor is connected to a power supply line (not shown). In addition, the gate electrode (not shown) and the source electrode (not shown) of the switching thin film transistor are respectively connected to the gate line and the data line.

A first passivation layer 152 and a second passivation layer 154 made of an insulating material are sequentially formed over the entire surface of the substrate 110 on the source and drain electrodes 142 and 144 . The first passivation layer 152 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx), and the second passivation layer 154 is formed of an organic insulating material such as photoacrylic or benzocyclobutene. Thus, the upper surface of the second passivation layer 154 may be flat.

The first passivation layer 152 and the second passivation layer 154 have a drain contact hole 156 exposing the drain electrode 144 . Here, the drain contact hole 156 is illustrated as being formed directly above the second contact hole 140b, but may be formed to be spaced apart from the second contact hole 140b.

One of the first passivation layer 152 and the second passivation layer 154 may be omitted, for example, the first passivation layer 152 made of an inorganic insulating material may be omitted.

The first electrode 162 is formed of a conductive material having a relatively high work function on the second passivation layer 154 . The first electrode 162 is formed for each pixel area and contacts the drain electrode 144 through the drain contact hole 156 . For example, the first electrode 162 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

A bank layer 170 made of an insulating material is formed on the first electrode 162 . The bank layer 170 is positioned between adjacent pixel regions, has an opening exposing the first electrode 162 , and covers the edge of the first electrode 162 .

Here, the bank layer 170 has a single-layer structure, but is not limited thereto. For example, the bank layer may have a double layer structure. That is, the bank layer includes a first bank and a second bank on the first bank, and the width of the first bank may be wider than the width of the second bank. In this case, the first bank may be made of an inorganic insulating material or an organic insulating material having a hydrophilic property, and the second bank may be made of an organic insulating material having a hydrophobic property.

The light emitting layer 180 is formed on the first electrode 162 exposed through the opening of the bank layer 170 . The emission layer 180 includes a hole auxiliary layer 182 , a light-emitting material layer (EML) 184 , and an electron auxiliary layer 186 sequentially positioned from an upper portion of the first electrode 162 .

Here, the light emitting layer 180 is located only in the opening of the bank layer 170 , but the light emitting layer 180 may also be formed on the bank layer 170 .

The hole auxiliary layer 182 , the light emitting material layer 184 , and the electron auxiliary layer 186 are made of an organic material and may be formed through a solution process. Accordingly, it is possible to simplify the process and provide a large-area high-resolution display device. As the solution process, a spin coating method, an inkjet printing method, or a screen printing method may be used.

Alternatively, the hole auxiliary layer 182 , the light emitting material layer 184 , and the electron auxiliary layer 186 may be formed through vacuum deposition.

Alternatively, the hole auxiliary layer 182 , the light emitting material layer 184 , and the electron auxiliary layer 186 may be formed by a combination of a solution process and vacuum deposition.

The hole auxiliary layer 182 may include at least one of a hole injection layer (HIL) and a hot transport layer (HTL), and the electron auxiliary layer 186 is an electron injection layer (electron injecting layer). : EIL) and may include at least one of an electron transporting layer (ETL).

A second electrode 192 made of a conductive material having a relatively low work function is formed on the electron auxiliary layer 186 over the entire surface of the substrate 110 . Here, the second electrode 192 may be formed of aluminum, magnesium, silver, or an alloy thereof.

The first electrode 162 , the light emitting layer 180 , and the second electrode 192 form an organic light emitting diode De, the first electrode 162 serves as an anode, and the second electrode 192 . acts as a cathode.

Here, the active matrix organic light emitting diode display device according to the embodiment of the present invention is a top emission type in which light emitted from the light emitting material layer 184 is outputted to the outside through the second electrode 192 . can In this case, the first electrode 162 further includes a reflective layer (not shown) made of an opaque conductive material. For example, the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy, and the first electrode 162 may have a triple layer structure of ITO/APC/ITO. In addition, the second electrode 192 has a relatively thin thickness so that light is transmitted, and the light transmittance of the second electrode 192 may be about 45-50%.

In contrast, the active matrix organic light emitting diode display device according to the embodiment of the present invention is a bottom emission type in which light emitted from the light emitting material layer 184 is outputted to the outside through the first electrode 162 . can be In this case, the second electrode 192 serves as a reflector.

The organic light emitting diode display device according to an embodiment of the present invention having a pixel area having such a structure includes a plurality of pixels, and each pixel includes a plurality of sub-pixels. Each includes a thin film transistor and an organic light emitting diode corresponding to one pixel area. In addition, each of the plurality of sub-pixels further includes a color filter. This will be described in more detail with reference to the drawings.

-First embodiment-

3 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to a first embodiment of the present invention, showing an area corresponding to one pixel, and FIG. 4 is an organic light emitting diode display according to the first embodiment of the present invention. A diagram schematically illustrating an arrangement structure of one pixel of a display device.

3 and 4 , one pixel P includes sequentially arranged first to fifth sub-pixels SP1, SP2, SP3, SP4, and SP5, and each sub-pixel SP1, SP2 , SP3, SP4, and SP5) correspond to one pixel area of FIGS. 1 and 2 .

Meanwhile, as shown in FIG. 3 , the organic light emitting diode display according to the first embodiment of the present invention includes a first substrate 210 , a thin film transistor T, a protective film 220 , an organic light emitting diode De, It includes a sealing layer 240 , a second substrate 250 , a black matrix 262 , a color filter layer 270 , and an overcoat layer 280 .

At this time, the first substrate 210 and the second substrate 250 are disposed to face each other, and the second substrate 250 is made of a transparent material. It may be a top emission type in which light is emitted to the outside through the substrate 250 . For example, the second substrate 250 may be formed of glass or plastic.

Meanwhile, the first substrate 210 may be made of a transparent material or an opaque material, and may be formed of glass or plastic.

A thin film transistor T is formed in each pixel region of the first to fifth sub-pixels SP1 , SP2 , SP3 , SP4 , and SP5 on the first substrate 210 . The thin film transistor T includes a switching thin film transistor and a driving thin film transistor, and each of the switching thin film transistor and the driving thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes.

Also, although not shown, a gate line and a data line connected to the switching thin film transistor are formed on the first substrate 210 , and a storage capacitor connected to the switching thin film transistor and the driving thin film transistor is formed.

A protective film 220 is formed on the thin film transistor T to cover the thin film transistor T.

A first electrode 232 , an organic light emitting layer 234 , and a second electrode 236 are included in each pixel region of the first to fifth sub-pixels SP1 , SP2 , SP3 , SP4 and SP5 on the passivation layer 220 . An organic light emitting diode De is formed.

In this case, the first electrode 232 is formed of a conductive material having a relatively large work function as an anode, and the second electrode 236 is formed of a conductive material having a relatively small work function as a cathode. For example, the first electrode 232 includes a transparent electrode made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is a transparent electrode. It further includes a reflective layer made of an opaque conductive material under it. The second electrode 236 may be formed of aluminum, magnesium, silver, or an alloy thereof, and has a relatively thin thickness to transmit light. In this case, the light emitted from the organic light emitting layer 234 is emitted to the outside through the second electrode 236 .

The first electrode 232 is patterned for each pixel area of the first to fifth sub-pixels SP1, SP2, SP3, SP4, and SP5 and is connected to the thin film transistor T, and the second electrode 236 is the first It is formed on the entire surface of the substrate 210 .

The organic light emitting layer 234 is positioned between the first electrode 232 and the second electrode 236 , and may be formed on the entire surface of the first substrate 210 . The organic light emitting layer 234 may emit white light.

The organic light emitting layer 234 has a multilayer structure in which a hole transporting layer, a light-emitting material layer, and an electron transporting layer are stacked in this order from the upper portion of the first electrode 232 . It may further include a hole injecting layer below the hole transport layer and an electron injecting layer above the electron transport layer.

An encapsulation layer 240 for protecting the organic light emitting diode De from external moisture or oxygen is formed on the organic light emitting diode De. The encapsulation layer 240 may be a UV-curable sealant or a frit sealant, or may have a structure in which an inorganic layer and an organic layer are alternately stacked.

Meanwhile, the second substrate 250 is spaced apart from the encapsulation layer 240 on the upper portion of the encapsulation layer 240 .

A black matrix 262 is formed under the second substrate 250 to correspond to the boundary of each pixel area of the first to fifth sub-pixels SP1 , SP2 , SP3 , SP4 , and SP5 . The black matrix 262 may be formed of a black resin or a double layer of chromium oxide (CrOx) and chromium (Cr).

A color filter layer 270 is formed under the black matrix 262 . The color filter layer 270 includes first to fourth color filters 272 , 273 , 274 and 276 respectively corresponding to the first to fourth sub-pixels SP1 , SP2 , SP3 , and SP4 . The first color filter 272 includes only the first color filter pattern, the second color filter 273 includes the second color filter pattern 273a and the color conversion pattern 273b, and the third color filter 274 ) includes only the third color filter pattern, and the fourth color filter 276 includes only the fourth color filter pattern.

Here, the first color filter pattern 272 is a red color filter pattern that absorbs blue light (B) and green light (G) and passes red light (R), and the second color filter pattern 273a and the third Each of the color filter patterns 274 is a cyan color filter pattern that absorbs red light (R) and transmits blue light (B) and green light (G), and the fourth color filter pattern 276 is green light (G). It is a blue color filter pattern that absorbs and passes red light (R) and blue light (B).

The second color filter pattern 273a and the third color filter pattern 274 may be formed through the same mask process.

Meanwhile, the color conversion pattern 273b includes a color conversion material having light absorption and light emission characteristics, absorbing light of a short wavelength, shifting it to light of a long wavelength, and emitting light.

This color conversion material has a nanometer size that does not cause Rayleigh scattering, and shows excellent optical properties after film formation for the patterning process, that is, a fluorescent dye with high peak wavelength and intensity ( fluorescent dye). In contrast, the color conversion material is a nanometer-sized semiconductor nanocrystal, which has an energy band gap that varies according to its size and shape, and may be a quantum dot having excellent light emitting characteristics and a narrow light emitting line i.

Here, the color conversion pattern 273b includes a color conversion material that absorbs blue light (B) and emits green light (G). That is, the color conversion pattern 273b is a green conversion pattern including a green conversion material.

In this case, the thickness of the color conversion pattern 273b may be about 2 to 5 micrometers, and the first to fourth color filter patterns 272 , 273a , 274 and 276 may have a thickness of about 2 to 3 micrometers.

Meanwhile, an overcoat layer 280 is formed under the color filter layer 270 . The overcoat layer 280 has a flat surface and covers and protects the color filter layer 270 . Here, since the color filter is not formed in the pixel region corresponding to the fifth sub-pixel SP5 , only the overcoat layer 280 is positioned in the pixel region corresponding to the fifth sub-pixel SP5 .

The second substrate 250 including the color filter layer 270 is bonded to the first substrate 210 including the organic light emitting diode De, and at this time, the overcoat layer 280 of the second substrate 250 is It is in contact with the encapsulation layer 240 of the first substrate 210 .

In the organic light emitting diode display according to the first embodiment of the present invention, in the first subpixel SP1, blue light B and green light G among white light W emitted from the organic light emitting diode De is absorbed by the first color filter pattern 272 , and the red light R passes through the first color filter pattern 272 . Accordingly, the red light R is output from the first sub-pixel SP1 .

In addition, in the second subpixel SP2 , blue light B among white light W emitted from the organic light emitting diode De passes through the color conversion pattern 273b of the second color filter 273 while passing through the green light ( After being converted to G), it is transmitted to the second color filter pattern 273a and passes through the second color filter pattern 273a, and green light G is transmitted to the color conversion pattern 273b and the second color filter pattern 273a. The red light R passes through the color conversion pattern 273b and is then absorbed by the second color filter pattern 273a. Accordingly, green light G with improved color purity and light efficiency is output from the second sub-pixel SP2 .

In addition, in the third sub-pixel SP3 , red light R among white light W emitted from the organic light emitting diode De is absorbed by the third color filter pattern 274 , and blue light B and green light ( G) passes through the third color filter pattern 274 . Accordingly, the cyan light C, which is a mixture of the blue light B and the green light G, is output from the third sub-pixel SP3 .

In addition, in the fourth sub-pixel SP4 , of the white light W emitted from the organic light emitting diode De, the green light G and the red light are absorbed by the fourth color filter pattern 276 , and the blue light B is the second color filter pattern 276 . 4 It passes through the color filter pattern 276. Accordingly, the blue light B is output from the fourth sub-pixel SP4 .

Meanwhile, in the fifth sub-pixel SP5 , the white light W emitted from the organic light emitting diode De is output to the outside as it is. The fifth sub-pixel SP5 may improve luminance and may be omitted.

As described above, in the organic light emitting diode display device according to the first embodiment of the present invention, the second color filter 273 includes the cyan color filter pattern 273a and the green conversion pattern 273b, thereby increasing the color purity of green light. It is possible to increase color gamut and increase light efficiency.

In addition, the pixel of the organic light emitting diode display according to the first embodiment of the present invention emits cyan light (C) in addition to the sub-pixels (SP1, SP2, SP4) that output red, green, and blue light (R, G, B). By further including the output sub-pixel SP3, more colors can be expressed and color gamut can be further increased.

-Second embodiment-

5 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to a second embodiment of the present invention, showing an area corresponding to one pixel.

Here, one pixel includes first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6, and each sub-pixel SP1, SP2, SP3, SP4, SP5, SP6 is shown in FIGS. 2 corresponds to one pixel area.

As shown in FIG. 5 , the organic light emitting diode display according to the second embodiment of the present invention includes a first substrate 310 , a thin film transistor T, a protective film 320 , an organic light emitting diode De, and an encapsulation layer. It includes a sealing layer 340 , a second substrate 350 , a black matrix 362 , a color filter layer 370 , and an overcoat layer 380 .

At this time, the first substrate 310 and the second substrate 350 are disposed to face each other, and the second substrate 350 is made of a transparent material. It may be a top emission type in which light is emitted to the outside through the substrate 350 . For example, the second substrate 350 may be formed of glass or plastic.

Meanwhile, the first substrate 310 may be made of a transparent material or an opaque material, and may be formed of glass or plastic.

A thin film transistor T is formed in each pixel area of the first to sixth sub-pixels SP1 , SP2 , SP3 , SP4 , SP5 and SP6 on the first substrate 310 . The thin film transistor T includes a switching thin film transistor and a driving thin film transistor, and each of the switching thin film transistor and the driving thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes.

Also, although not shown, a gate line and a data line connected to the switching thin film transistor are formed on the first substrate 310 , and a storage capacitor connected to the switching thin film transistor and the driving thin film transistor is formed.

A protective film 320 is formed on the thin film transistor T to cover the thin film transistor T.

In each pixel region of the first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6 on the passivation layer 320 , a first electrode 332 , an organic light emitting layer 334 , and a second electrode 336 . An organic light emitting diode (De) comprising a is formed.

In this case, the first electrode 332 is formed of a conductive material having a relatively large work function as an anode, and the second electrode 336 is formed of a conductive material having a relatively small work function as a cathode. For example, the first electrode 332 includes a transparent electrode made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is a transparent electrode. It further includes a reflective layer made of an opaque conductive material under it. The second electrode 336 may be formed of aluminum, magnesium, silver, or an alloy thereof, and has a relatively thin thickness to transmit light. In this case, the light emitted from the organic light emitting layer 334 is emitted to the outside through the second electrode 336 .

The first electrode 332 is patterned for each pixel area of the first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6 and is connected to the thin film transistor T, and the second electrode 336 is It is formed on the entire surface of the first substrate 310 .

The organic light emitting layer 334 is positioned between the first electrode 332 and the second electrode 336 , and may be formed on the entire surface of the first substrate 310 . The organic light emitting layer 334 may emit white light.

The organic light emitting layer 334 has a multilayer structure in which a hole transporting layer, a light-emitting material layer, and an electron transporting layer are stacked in this order from an upper portion of the first electrode 332 . It may further include a hole injecting layer below the hole transport layer and an electron injecting layer above the electron transport layer.

An encapsulation layer 340 for protecting the organic light emitting diode De from external moisture or oxygen is formed on the organic light emitting diode De. The encapsulation layer 340 may be an ultraviolet curing sealant or a frit sealant, or may have a structure in which an inorganic layer and an organic layer are alternately stacked.

Meanwhile, the second substrate 350 is positioned on the encapsulation layer 340 to be spaced apart from the encapsulation layer 340 .

A black matrix 362 is formed under the second substrate 350 to correspond to the boundary of each pixel area of the first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6. The black matrix 362 may be formed of a black resin or a double layer of chromium oxide (CrOx) and chromium (Cr).

A color filter layer 370 is formed under the black matrix 362 . The color filter layer 370 includes first to fifth color filters 371 , 372 , 373 , 374 , and 376 respectively corresponding to the first to fifth sub-pixels SP1 , SP2 , SP3 , SP4 , and SP5 . The first color filter 371 includes a first color filter pattern 371a and a first color conversion pattern 371b, the second color filter 372 includes only the second color filter pattern, and the third color filter Reference numeral 373 includes the third color filter pattern 373a and the second color conversion pattern 373b, the fourth color filter 374 includes only the fourth color filter pattern, and the fifth color filter 376 includes Only the fifth color filter pattern is included.

Here, each of the first color filter pattern 371a and the second color filter pattern 372 is a magenta color filter pattern that absorbs green light (G) and transmits red light (R) and blue light (B), Each of the third color filter pattern 373a and the fourth color filter pattern 374 is a cyan color filter pattern that absorbs red light (R) and passes blue light (B) and green light (G), and a fifth The color filter pattern 376 is a blue color filter pattern that absorbs green light (G) and red light (R) and transmits blue light (B).

The first color filter pattern 371a is formed through the same mask process as the second color filter pattern 372 , and the third color filter pattern 373a is formed through the same mask process as the fourth color filter pattern 374 . can be

On the other hand, each of the first color conversion pattern 371b and the second color conversion pattern 373b has light absorption and light emission characteristics, and after absorbing light of a short wavelength, shifts to light of a long wavelength and emits light. (color conversion material).

This color conversion material has a nanometer size that does not cause Rayleigh scattering, and shows excellent optical properties after film formation for the patterning process, that is, a fluorescent dye with high peak wavelength and intensity ( fluorescent dye). In contrast, the color conversion material is a nanometer-sized semiconductor nanocrystal, which has an energy band gap that changes according to its size and shape, and may be a quantum dot having excellent light emitting characteristics and a narrow light emitting line i.

Here, the first color conversion pattern 371b includes a color conversion material that absorbs blue light (B) and green light (G) to emit red light (R), and the second color conversion pattern 373b includes blue light (B). and a color conversion material that absorbs and emits green light (G). That is, the first color conversion pattern 371b is a red conversion pattern including a red conversion material, and the second color conversion pattern 373b is a green conversion pattern including a green conversion material.

In this case, the thickness of the first and second color conversion patterns 371b and 373b is about 2 to 5 micrometers, and the thickness of the first to fifth color filter patterns 371a, 372, 373a, 374 and 376 is about 2 to 3 micrometers.

Meanwhile, an overcoat layer 380 is formed under the color filter layer 370 . The overcoat layer 380 has a flat surface and covers and protects the color filter layer 370 . Here, since the color filter is not formed in the pixel region corresponding to the sixth sub-pixel SP6 , only the overcoat layer 380 is positioned in the pixel region corresponding to the sixth sub-pixel SP6 .

The second substrate 350 including the color filter layer 370 is bonded to the first substrate 310 including the organic light emitting diode De, and in this case, the overcoat layer 380 of the second substrate 350 is It is in contact with the encapsulation layer 340 of the first substrate 310 .

In the organic light emitting diode display according to the second embodiment of the present invention, in the first sub-pixel SP1, blue light B and green light G among white light W emitted from the organic light emitting diode De is converted into red light (R) while passing through the first color conversion pattern 371b of the first color filter 371 , and then transmitted to the first color filter pattern 371a and passes through the first color filter pattern 371a and the red light R passes through the first color conversion pattern 371b and the first color filter pattern 371a. Accordingly, red light R with improved color purity and light efficiency is output from the first sub-pixel SP1 .

In addition, in the second subpixel SP2 , green light G among white light W emitted from the organic light emitting diode De is absorbed by the second color filter pattern 372 , and red light R and blue light ( B) passes through the second color filter pattern 372 . Accordingly, magenta light M, which is a mixture of red light R and blue light B, is output from the second subpixel SP2 .

In addition, in the third sub-pixel SP3 , the blue light B among the white light W emitted from the organic light emitting diode De passes through the second color conversion pattern 373b of the third color filter 373 . After being converted into green light (G), it is transmitted to the third color filter pattern 373a and passes through the third color filter pattern 373a, and the green light (G) is transmitted to the second color conversion pattern 373b and the third color filter. The red light R passes through the pattern 373a and is absorbed by the third color filter pattern 373a after passing through the second color conversion pattern 373b. Accordingly, the green light G with improved color purity and light efficiency is output from the third sub-pixel SP3 .

In addition, in the fourth subpixel SP4 , red light R among white light W emitted from the organic light emitting diode De is absorbed by the fourth color filter pattern 374 , and blue light B and green light ( G) passes through the fourth color filter pattern 374 . Accordingly, the cyan light C, which is a mixture of the blue light B and the green light G, is output from the fourth sub-pixel SP4 .

In addition, in the fifth sub-pixel SP5 , of the white light W emitted from the organic light emitting diode De, the green light G and the red light are absorbed by the fifth color filter pattern 376 , and the blue light B is the first 5 It passes through the color filter pattern 376 . Accordingly, the blue light B is output from the fifth sub-pixel SP5 .

Meanwhile, in the sixth sub-pixel SP6, the white light W emitted from the organic light emitting diode De is outputted to the outside as it is. The sixth sub-pixel SP6 may improve luminance and may be omitted.

As described above, in the organic light emitting diode display device according to the second embodiment of the present invention, the first color filter 371 includes a magenta color filter pattern 371a and a red conversion pattern 371b, and the third color filter ( 373) includes the cyan color filter pattern 373a and the green conversion pattern 373b, thereby increasing the color purity of the red light and the green light to increase the color gamut and increase the light efficiency compared to the first embodiment.

In addition, the pixel of the organic light emitting diode display according to the second embodiment of the present invention emits magenta light (M) in addition to the sub-pixels (SP1, SP3, SP5) that output red, green, and blue light (R, G, B). By further including the sub-pixel SP2 for outputting and the sub-pixel SP4 for outputting the cyan light C, more colors can be expressed and color gamut can be further increased compared to the first embodiment.

6 to 8 are diagrams schematically illustrating an arrangement structure of one pixel of an organic light emitting diode display according to a second exemplary embodiment of the present invention.

As shown in FIG. 6 , one pixel P of the organic light emitting diode display according to the second embodiment of the present invention includes first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6. include The first sub-pixel SP1 outputs red light R, the second sub-pixel SP2 outputs magenta light M, the third sub-pixel SP3 outputs green light G, The fourth sub-pixel SP4 outputs cyan light C, the fifth sub-pixel SP5 outputs blue light B, and the sixth sub-pixel SP6 outputs white light W. The first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6 may have a structure arranged in a line.

Meanwhile, the pixel P of FIG. 6 may further include a sub-pixel emitting blue light B in the same structure as the fifth sub-pixel SP5 .

Alternatively, as shown in FIG. 7 , the first to sixth sub-pixels SP1 , SP2 , SP3 , SP4 , SP5 , and SP6 may have a structure arranged in a 2*3 matrix form. For example, the first, third, and fifth sub-pixels SP1, SP3, and SP5 are sequentially arranged in the first row, and the second, fourth, and sixth sub-pixels SP2, SP4, and SP6 are arranged in the second row. They can be arranged sequentially in rows. In contrast, the second, fourth, and sixth subpixels SP2, SP4, and SP6 are sequentially arranged in the first row, and the first, third, and fifth subpixels SP1, SP3, and SP5 are arranged in the second row. They may be sequentially arranged in a row, and the arrangement of the first to sixth subpixels SP1 , SP2 , SP3 , SP4 , SP5 , and SP6 is not limited thereto.

Alternatively, as shown in FIG. 8 , each of the first and second pixels P1 and P2 of the organic light emitting diode display according to the second embodiment of the present invention has first to eighth sub-pixels SP1 and SP2. , SP3, SP4, SP5, SP6, SP7, SP8). Here, each of the first and second pixels P1 and P2 includes two sub-pixels SP5 and SP6 that output blue light B, and the first and second pixels P1 and P2 emit white light (B). The seventh and eighth sub-pixels SP7 and SP8 outputting W) may be shared.

The first subpixel SP1 includes the first color filter 371 of FIG. 5 , the second subpixel SP2 includes the second color filter 372 of FIG. 5 , and the third subpixel SP3 ) includes the third color filter 373 of FIG. 5 , the fourth subpixel SP4 includes the fourth color filter 374 of FIG. 5 , and fifth and fifth subpixels SP5 and SP6 Each of the 5 includes the fifth color filter 376 of FIG.

Accordingly, the first sub-pixel SP1 outputs red light R, the second sub-pixel SP2 outputs magenta light M, and the third sub-pixel SP3 outputs green light G, and , the fourth sub-pixel SP4 outputs cyan light C, and the fifth and sixth sub-pixels SP5 and SP6 output blue light B.

The first to eighth sub-pixels SP1, SP2, SP3, SP4, SP5, SP6, SP7, and SP8 may have a structure arranged in the form of a 2*4 matrix. In this case, the first, third, and fifth sub-pixels SP1 , SP3 , and SP5 of the first pixel P1 are sequentially arranged in the first row, and the second, fourth and fifth sub-pixels SP1 , SP3 and SP5 of the first pixel P1 are sequentially arranged in the first row. 6 sub-pixels SP2, SP4, SP6 are sequentially arranged in the second row, and the second, fourth, and sixth sub-pixels SP2, SP4, SP6 of the second pixel P2 are sequentially arranged in the first row , and the first, third, and fifth subpixels SP1 , SP3 , and SP5 of the second pixel SP2 may be sequentially disposed in the second row.

As described above, the pixel of the organic light emitting diode display according to the second embodiment of the present invention includes at least one red sub-pixel, at least one magenta sub-pixel, at least one green sub-pixel, and at least one cyan sub-pixel. , at least one blue sub-pixel, and may further include a blue sub-pixel and/or a white sub-pixel, and the sub-pixels may be arranged in various ways.

9 is a view showing the color gamut of the organic light emitting diode display according to the second embodiment of the present invention on the CIE 1976 chromaticity distribution diagram.

As shown in FIG. 9 , the color gamut (EM) of the organic light emitting diode display according to the second embodiment of the present invention has a pentagonal shape, and the organic light emitting diode includes pixels composed of red, green, and blue sub-pixels. It has a larger area than the color gamut (Ref) of the diode display. Accordingly, the organic light emitting diode display device according to the second embodiment of the present invention can express more colors and realize a high color reproducibility.

In the previous embodiment, the top light emitting type organic light emitting diode display has been described, but the present invention can also be applied to the bottom light emitting type organic light emitting diode display. This will be described with reference to the drawings.

-Third embodiment-

10 is a cross-sectional view schematically illustrating an organic light emitting diode display according to a third exemplary embodiment of the present invention, showing an area corresponding to one pixel.

Here, one pixel includes first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6, and each sub-pixel SP1, SP2, SP3, SP4, SP5, SP6 is shown in FIGS. 2 corresponds to one pixel area.

10, the organic light emitting diode display according to the third embodiment of the present invention includes a first substrate 410, a thin film transistor T, a protective film 420, a color filter layer 430, and an overcoat layer ( 440 ), an organic light emitting diode De, a sealing layer 460 , and a second substrate 470 .

At this time, the first substrate 410 and the second substrate 470 are disposed to face each other, and the first substrate 410 is made of a transparent material. It may be a bottom emission type that emits light to the outside through the substrate 410 . For example, the first substrate 410 may be formed of glass or plastic.

In addition, the thin film transistor T is formed in each pixel area of the first to sixth sub-pixels SP1 , SP2 , SP3 , SP4 , SP5 and SP6 on the first substrate 410 . The thin film transistor T includes a switching thin film transistor and a driving thin film transistor, and each of the switching thin film transistor and the driving thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes.

Also, although not shown, a gate line and a data line connected to the switching thin film transistor are formed on the first substrate 410 , and a storage capacitor connected to the switching thin film transistor and the driving thin film transistor is formed.

A protective film 420 is formed on the thin film transistor T to cover the thin film transistor T.

A color filter layer 430 is formed on the passivation layer 420 . The color filter layer 430 includes first to fifth color filters 431 , 432 , 433 , 434 , and 436 respectively corresponding to the first to fifth sub-pixels SP1 , SP2 , SP3 , SP4 , and SP5 . The first color filter 431 includes a first color filter pattern 431a and a first color conversion pattern 431b, the second color filter 432 includes only the second color filter pattern, and the third color filter Reference numeral 433 includes the third color filter pattern 433a and the second color conversion pattern 433b, the fourth color filter 434 includes only the fourth color filter pattern, and the fifth color filter 436 includes Only the fifth color filter pattern is included.

Here, each of the first color filter pattern 431a and the second color filter pattern 432 is a magenta color filter pattern that absorbs green light (G) and transmits red light (R) and blue light (B), Each of the third color filter pattern 433a and the fourth color filter pattern 434 is a cyan color filter pattern that absorbs red light (R) and passes blue light (B) and green light (G), and a fifth The color filter pattern 436 is a blue color filter pattern that absorbs green light (G) and red light (R) and transmits blue light (B).

The first color filter pattern 431a is formed through the same mask process as the second color filter pattern 432 , and the third color filter pattern 433a is formed through the same mask process as the fourth color filter pattern 434 . can be

On the other hand, each of the first color conversion pattern 431b and the second color conversion pattern 433b has light absorption and light emission characteristics, and after absorbing light of a short wavelength, shifts to light of a long wavelength to emit light. (color conversion material).

This color conversion material has a nanometer size that does not cause Rayleigh scattering, and shows excellent optical properties after film formation for the patterning process, that is, a fluorescent dye with high peak wavelength and intensity ( fluorescent dye). In contrast, the color conversion material is a nanometer-sized semiconductor nanocrystal, which has an energy band gap that changes according to its size and shape, and may be a quantum dot having excellent light emitting characteristics and a narrow light emitting line i.

Here, the first color conversion pattern 431b includes a color conversion material that absorbs blue light (B) and green light (G) to emit red light (R), and the second color conversion pattern 433b includes blue light (B). and a color conversion material that absorbs and emits green light (G). That is, the first color conversion pattern 431b is a red conversion pattern including a red conversion material, and the second color conversion pattern 433b is a green conversion pattern including a green conversion material.

At this time, the thickness of the first and second color conversion patterns 431b and 433b is about 2 to 5 micrometers, and the thickness of the first to fifth color filter patterns 431a, 432, 433a, 434 and 436 is about 2 to 3 micrometers.

Although not shown, on the passivation layer 420 , the first to fifth color filters 431 correspond to the boundaries of the respective pixel areas of the first to sixth sub-pixels SP1 , SP2 , SP3 , SP4 , SP5 and SP6 . , 432 , 433 , 434 , 436 ) may be formed with a black matrix surrounding each of them.

Also, although the color filter layer 430 is formed on the thin film transistor T, the color filter layer 430 may be formed under the thin film transistor T.

Meanwhile, an overcoat layer 440 is formed on the color filter layer 430 . The overcoat layer 440 has a flat surface and covers and protects the color filter layer 430 . Here, since the color filter layer is not formed in the pixel region corresponding to the sixth sub-pixel SP6 , only the overcoat layer 440 is positioned in the pixel region corresponding to the sixth sub-pixel SP6 .

An organic light emitting diode De including a first electrode 452 , an organic light emitting layer 454 , and a second electrode 456 is formed on the overcoat layer 440 .

In this case, the first electrode 452 is formed of a conductive material having a relatively large work function as an anode, and the second electrode 456 is formed of a conductive material having a relatively small work function as a cathode. For example, the first electrode 452 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The second electrode 456 may have a reflective characteristic or may be formed of an opaque metal material. In this case, the light emitted from the organic light emitting layer 454 is emitted to the outside through the first electrode 452 and the first substrate 410 .

The first electrode 452 is patterned for each pixel area of the first to sixth sub-pixels SP1, SP2, SP3, SP4, SP5, and SP6 and is connected to the thin film transistor T, and the second electrode 456 is It is formed on the entire surface of the first substrate 410 .

The organic light emitting layer 454 is positioned between the first electrode 452 and the second electrode 456 , and may be formed on the entire surface of the first substrate 410 . The organic light emitting layer 454 may emit white light.

The organic light emitting layer 454 has a multilayer structure in which a hole transporting layer, a light-emitting material layer, and an electron transporting layer are stacked in this order from the upper portion of the first electrode 452 . It may further include a hole injecting layer below the hole transport layer and an electron injecting layer above the electron transport layer.

On the other hand, an encapsulation layer 460 for protecting the organic light emitting diode De from moisture or oxygen from the outside is formed on the organic light emitting diode De, and the second substrate 470 is formed on the encapsulation layer 460 . positioned, the organic light emitting diode display device is encapsulated. The encapsulation layer 460 may be a UV-curable sealant or a frit sealant, or may have a structure in which an inorganic layer and an organic layer are alternately stacked.

In this case, the second substrate 470 may be formed of an opaque material, for example, may be formed of an opaque glass or plastic.

In the organic light emitting diode display according to the third embodiment of the present invention, in the first sub-pixel SP1, blue light B and green light G among white light W emitted from the organic light emitting diode De is converted into red light (R) while passing through the first color conversion pattern 431b of the first color filter 431 , and then transmitted to the first color filter pattern 431a and passes through the first color filter pattern 431a and the red light R passes through the first color conversion pattern 431b and the first color filter pattern 431a. Accordingly, red light R with improved color purity and light efficiency is output from the first sub-pixel SP1 .

In addition, in the second subpixel SP2 , green light G among white light W emitted from the organic light emitting diode De is absorbed by the second color filter pattern 432 , and red light R and blue light (R) B) passes through the second color filter pattern 432 . Accordingly, magenta light M, which is a mixture of red light R and blue light B, is output from the second subpixel SP2 .

In addition, in the third subpixel SP3 , the blue light B among the white light W emitted from the organic light emitting diode De passes through the second color conversion pattern 433b of the third color filter 433 . After being converted into green light (G), it is transmitted to the third color filter pattern 433a and passes through the third color filter pattern 433a, and the green light (G) is transmitted to the second color conversion pattern 433b and the third color filter. After passing through the pattern 433a, the red light R is absorbed by the third color filter pattern 433a after passing through the second color conversion pattern 433b. Accordingly, the green light G with improved color purity and light efficiency is output from the third sub-pixel SP3 .

In addition, in the fourth subpixel SP4 , red light R among white light W emitted from the organic light emitting diode De is absorbed by the fourth color filter pattern 434 , and blue light B and green light ( G) passes through the fourth color filter pattern 434 . Accordingly, the cyan light C, which is a mixture of the blue light B and the green light G, is output from the fourth sub-pixel SP4 .

In addition, in the fifth sub-pixel SP5 , of the white light W emitted from the organic light emitting diode De, the green light G and the red light are absorbed by the fifth color filter pattern 436 , and the blue light B is the second 5 It passes through the color filter pattern (436). Accordingly, the blue light B is output from the fifth sub-pixel SP5 .

Meanwhile, in the sixth sub-pixel SP6, the white light W emitted from the organic light emitting diode De is outputted to the outside as it is. The sixth sub-pixel SP6 may improve luminance and may be omitted.

As described above, in the bottom emission type organic light emitting diode display device according to the third embodiment of the present invention, the first color filter 431 includes a magenta color filter pattern 431a and a red conversion pattern 431b, and the third Since the color filter 433 includes the cyan color filter pattern 433a and the green conversion pattern 433b, it is possible to increase the color purity of the red light and the green light to increase the color gamut and increase the light efficiency compared to the first embodiment.

In addition, the pixels of the bottom light emitting diode display according to the third embodiment of the present invention include magenta light ( By further including a sub-pixel SP2 for outputting M) and a sub-pixel SP4 for outputting cyan light C, more colors can be expressed compared to the first embodiment, and color gamut can be further increased.

Although the above has been described with reference to the preferred embodiment of the present invention, those of ordinary skill in the art can variously modify the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. and may be changed.

210: first substrate T: thin film transistor
220: protective film De: organic light emitting diode
232: first electrode 234: organic light emitting layer
236: second electrode 240: encapsulation layer
250: second substrate 262: black matrix
270: color filter layer 272: first color filter
273: second color filter 273a: color filter pattern
273b: color conversion pattern 274: third color filter
276: fourth color filter 280: overcoat layer

Claims (11)

a substrate on which pixels including first, second, third, and fourth sub-pixels are defined;
a thin film transistor positioned in each region of the first, second, third, and fourth sub-pixels on the substrate;
an organic light emitting diode connected to the thin film transistor;
First, second, third, and fourth colors respectively positioned in the first, second, third, and fourth sub-pixel regions and outputting light of different first, second, third, and fourth colors, respectively 4 color filter layer including color filter
includes,
The first, second, third, and fourth colors of light are red light, green light, blue light, and cyan light, respectively;
and the second color filter includes a cyan color filter pattern that absorbs the red light and transmits the green light and the blue light, and a green conversion pattern that converts the blue light into the green light.
According to claim 1,
and the fourth color filter includes a cyan color filter pattern that absorbs the red light and transmits the green light and the blue light.
3. The method of claim 2,
and the first color filter includes a red color filter pattern that passes the red light and absorbs the green light and the blue light.
3. The method of claim 2,
and the first color filter includes a magenta color filter pattern that absorbs the green light and transmits the red and blue light, and a red conversion pattern that converts the green light and the blue light into the red light.
5. The method of claim 4,
The pixel further includes a fifth sub-pixel,
The color filter layer further includes a fifth color filter positioned in the region of the fifth sub-pixel and outputting magenta light;
and the fifth color filter includes a magenta color filter pattern that absorbs the green light and transmits the red light and the blue light.
6. The method of claim 5,
The second sub-pixel is positioned between the first sub-pixel and the third sub-pixel, the fourth sub-pixel is positioned between the second sub-pixel and the third sub-pixel, and the fifth sub-pixel is the An organic light emitting diode display positioned between the first sub-pixel and the second sub-pixel.
7. The method according to any one of claims 1 to 6,
The pixel further comprises at least one sub-pixel emitting white light.
According to claim 1,
The organic light emitting diode is positioned between the substrate and the color filter layer.
According to claim 1,
The color filter layer is positioned between the substrate and the organic light emitting diode display.
According to claim 1,
The second subpixel is positioned between the first subpixel and the third subpixel, and the fourth subpixel is positioned between the second subpixel and the third subpixel.
According to claim 1,
The pixel further includes a fifth sub-pixel for outputting magenta light, a sixth sub-pixel for outputting blue light, and seventh and eighth sub-pixels for outputting white light,
The first, second, third, and seventh sub-pixels of the pixel and the fourth, fifth, and sixth sub-pixels of the pixels adjacent to the pixel are arranged in a first row;
The fourth, fifth, sixth, and eighth subpixels of the pixel and the first, second, and third subpixels of the pixel adjacent to the pixel are arranged in a second row;
The pixel and the pixel adjacent to the pixel share the seventh and eighth sub-pixels.

Images