KR102402024B1 - Display device with a built-in touch screen and method for fabricating the same - Google Patents

Abstract

A display device according to the present invention includes a plurality of gate lines, a plurality of data lines, a thin film transistor disposed in each subpixel, and a contact hole from which a part of a planarization layer is removed, and a protective layer and a connection pattern are laminated on an inner inclined surface of the contact hole. By disposing it, there is an effect of preventing contact failure.
In addition, the method for manufacturing a display device of the present invention includes forming a thin film transistor, forming a contact hole exposing a source electrode or a drain electrode of the thin film transistor, a first electrode (pixel electrode) in a subpixel; By forming the touch sensing line and the planarization layer in one mask process, there is an effect of reducing the mask process and the process tac time.

Description

Display device with built-in touch screen and manufacturing method

The present invention relates to a touch screen embedded display device and a manufacturing method.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. Various display devices such as an organic light emitting display device (OLED) are being used.

Such a display device provides a touch-based input method that allows a user to easily and intuitively and conveniently input information or commands by breaking away from a conventional input method such as a button, a keyboard, and a mouse.

In order to provide such a touch-based input method, it is necessary to detect the presence or absence of a user's touch and to accurately detect the touch coordinates.

To this end, conventionally, touch sensing is provided by employing one of various touch methods such as a resistive film method, a capacitance method, an electromagnetic induction method, an infrared method, an ultrasonic method, and the like.

In addition, when a touch screen is applied to a display device, a touch sensor is embedded in the display device. In particular, an in-cell type display device using a common electrode formed on a lower substrate as a touch electrode has been developed. is becoming

However, since the in-cell type display device needs to form a separate touch sensing line connected to the touch electrode, it requires a detailed additional process, which has disadvantages in that high manufacturing cost and long manufacturing time are required.

The present invention provides a display device with a built-in touch screen that can reduce the mask process and process tac time by forming the first electrode (pixel electrode), the touch sensing line, and the planarization layer in the sub-pixel in one mask process. and to provide a manufacturing method.

In addition, according to the present invention, the contact hole region exposing the source electrode (or drain electrode) of the thin film transistor and the protective layer contact hole region for removing a portion of the protective layer formed in the contact hole region do not partially overlap, so that the planarization layer is formed. Another object of the present invention is to provide a touch screen-embedded display device and a manufacturing method for preventing contact failure between a pixel electrode (first electrode) and a source electrode (or drain electrode) due to over-etching.

A display device of the present invention provides a plurality of gate lines disposed on a substrate in a first direction, a plurality of data lines disposed on the substrate in a second direction, and the gate line A thin film transistor disposed in each sub-pixel defined by crossing the data line, a first electrode spaced apart from the thin film transistor and a planarization layer therebetween, and a first electrode disposed overlapping with the first electrode and a protective layer therebetween A contact hole from which a part of the planarization layer is removed to expose two electrodes, a touch sensing line spaced apart from the first electrode on the planarization layer and connected to the second electrode, and a source electrode or drain electrode of the thin film transistor and a connection pattern disposed inside the contact hole to electrically connect the first electrode and the source electrode or the drain electrode, wherein the connection pattern is disposed on a first inclined surface among the inner inclined surfaces of the contact hole, and a second Since the protective layer and the connecting pattern are stacked on the inclined surface, there is an effect of preventing contact failure between the pixel electrode (first electrode) and the source electrode (or drain electrode) due to over-etching of the planarization layer.

In addition, the method for manufacturing a display device of the present invention includes the steps of forming a thin film transistor on a substrate, and sequentially forming a first protective layer, a planarization layer, a first metal layer, and a second metal layer on the substrate on which the thin film transistor is formed. , forming a photoresist film on the entire surface of the substrate on which the second metal layer is formed, and forming a first photoresist film pattern comprising a first pattern, a second pattern, and a third pattern using a mask having at least three exposure areas; Forming a first contact hole exposing a first electrode, a touch sensing line, and a source electrode or a drain electrode of a thin film transistor on the planarization layer by performing an etching process using one photoresist pattern, the touch sensing line is formed After forming a second protective layer on a substrate, a mask process is performed to expose a second contact hole exposing the data pad, a third contact hole exposing the gate pad, a fourth contact hole exposing the touch sensing line, and the Forming a second passivation layer contact hole, forming a transparent conductive material on the substrate on which the second passivation layer is formed, and then using a mask process to overlap the first electrode and the second passivation layer and forming a connection pattern connecting the first electrode and the source electrode or the drain electrode of the thin film transistor in the first contact hole region, thereby forming the first electrode (pixel electrode), the touch sensing line, and the planarization layer in the sub-pixel. By forming in one mask process, there is an effect of reducing the mask process and reducing the process tac time.

The touch screen embedded display device and the manufacturing method according to the present invention form the first electrode (pixel electrode), the touch sensing line, and the planarization layer in the sub-pixel in one mask process, thereby reducing the mask process and reducing the process tac time. ) can be reduced.

In addition, the touch screen embedded display device and the manufacturing method according to the present invention include a contact hole region exposing a source electrode (or a drain electrode) of a thin film transistor and a protective layer contact hole region in which a portion of the protective layer formed in the contact hole region is removed. By preventing the partial overlap, contact failure between the pixel electrode (first electrode) and the source electrode (or drain electrode) due to over-etching of the planarization layer is prevented.

1 is a block diagram of a touch screen built-in display device according to the present invention.
2 is a diagram illustrating capacitance components (Cself, Cpara1, Cpara2) generated in a touch mode in a touch screen embedded display device according to the present invention.
3 is a plan view of a display panel included in the touch screen embedded display device according to the present invention.
4 is a view exemplarily showing a cross-sectional view of a display panel when the touch screen built-in display device according to an embodiment of the present invention is a liquid crystal display device.
5 is another plan view of a display panel included in the touch screen embedded display device according to the present invention.
6 is a view illustrating a reduction in the manufacturing process of the touch screen embedded display device according to the present invention.
7 is a cross-sectional view showing the structures of a sub-pixel area, a data pad area, and a gate pad area of a touch screen embedded display device according to an embodiment of the present invention.
8A to 12B are diagrams illustrating a manufacturing process of a touch screen embedded display device according to the present invention.
13A to 13H are diagrams illustrating a process of forming a pixel electrode and a touch sensing line in a manufacturing process of a display device with a built-in touch screen according to the present invention.
14A and 14B are diagrams for explaining a structure of forming a contact hole of a second protective layer during a manufacturing process of a display device with a built-in touch screen according to the present invention.
15 is a view for explaining an electrical connection structure of the first electrode and the connection pattern in the first contact hole (C1) region of the touch screen embedded display device according to the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted.

When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, cases including the plural are included unless otherwise explicitly stated.

In interpreting the components, it is construed as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, when the temporal relationship is described as 'after', 'following', 'after', 'before', etc., 'immediately' or 'directly' Unless ' is used, cases that are not continuous may be included.

Although the first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention can be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be independently implemented with respect to each other or implemented together in a related relationship. may be

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. And in the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals refer to like elements throughout.

1 is a block diagram of a touch screen embedded display device 100 according to the present invention.

Referring to FIG. 1 , a display device with a built-in touch screen 100 according to the present invention is a display device capable of providing an image display function (display function) and a touch sensing function.

The touch screen-embedded display device 100 according to the present invention may be, for example, a medium-to-large device such as a TV or monitor having a touch sensing function for a touch input, or a mobile device such as a smart phone or a tablet.

Referring to FIG. 1 , a touch screen embedded display device 100 according to the present invention provides a display function, such as a display panel 110 , a data driver 120 , a gate driver 130 , a controller 140 , and the like. includes

The display panel 110 may include a plurality of data lines DL arranged in a first direction (eg, a column direction) and a plurality of gate lines GL arranged in a second direction (eg, a row direction). can

The data driver 120 drives a plurality of data lines DL. Here, the data driver 120 is also referred to as a 'source driver'.

The gate driver 130 drives the plurality of gate lines GL. Here, the gate driver 130 is also referred to as a 'scan driver'.

The controller 140 controls the data driver 120 and the gate driver 130 , and for this purpose, various control signals are supplied to the data driver 120 and the gate driver 130 .

The controller 140 starts scanning according to the timing implemented in each frame, converts the input image data input from the outside to match the data signal format used by the data driver 120 , and outputs the converted image data, , to control the data operation at an appropriate time according to the scan.

The controller 140 may be a timing controller used in a typical display technology or a control device that further performs other control functions including a timing controller.

The gate driver 130 sequentially supplies a scan signal of an on voltage or an off voltage to the plurality of gate lines GL under the control of the controller 140 .

When a specific gate line is opened by the gate driver 130 , the data driver 120 converts the image data received from the controller 140 into an analog data voltage and supplies it to the plurality of data lines DL.

Although the data driver 120 is located only on one side (eg, upper or lower side) of the display panel 110 in FIG. 1 , the data driver 120 is located on both sides (eg, upper and lower sides) of the display panel 110 according to a driving method and a panel design method. ) may be located in

Although the gate driver 130 is located only on one side (eg, left or right) of the display panel 110 in FIG. 1 , the gate driver 130 is located on both sides (eg, left and right side) of the display panel 110 according to a driving method, a panel design method, etc. It may be located on the right side).

The above-described controller 140, along with the input image data, includes a vertical sync signal (Vsync), a horizontal sync signal (Hsync), an input data enable (DE: Data Enable) signal, various types including a clock signal (CLK), etc. Timing signals are received from the outside (eg host system).

The touch screen embedded display device 100 according to the present invention is a device of various types, such as a liquid crystal display device, an organic light emitting display device, and a plasma display device. can For example, it may be an IPS (In-Plane Switching) liquid crystal display device that has advantages such as high resolution, low power, and a wide viewing angle by arranging liquid crystal molecules horizontally and rotating them in place to express the screen. More specifically, the LCD may be an Advanced High Performance-IPS (AH-IPS) type liquid crystal display.

Each subpixel SP disposed on the display panel 110 may include a circuit element such as a transistor.

Meanwhile, the touch screen embedded display device 100 according to the present invention may include a touch system for providing a touch sensing function.

Referring to FIG. 1 , the touch system includes a plurality of touch electrodes TE serving as a touch sensor, and a touch circuit 150 for sensing a touch by driving the plurality of touch electrodes TE. may include

The touch circuit 150 may sequentially drive the plurality of touch electrodes TE by sequentially supplying the touch driving signal to the plurality of touch electrodes TE.

Thereafter, the touch circuit 150 receives the touch sensing signal from the touch electrode to which the touch driving signal is applied.

The touch circuit 150 may calculate the presence or absence of a touch and touch coordinates based on a touch sensing signal received from each of the plurality of touch electrodes TE.

Here, the touch driving signal may have, for example, a waveform of a pulse modulation signal having two or more voltage levels.

A touch sensing signal received from each of the plurality of touch electrodes TE may vary depending on whether or not a touch is generated by a pointer such as a finger or a pen in the vicinity of the corresponding touch electrode.

The touch circuit 150 may obtain a touch presence and touch coordinates by finding out an amount of capacitance change (or a change in voltage or a change in charge) in the touch electrode TE based on the touch sensing signal.

Referring to FIG. 1 , in order to supply a touch driving signal to each of the plurality of touch electrodes TE, a sensing line SL is connected to each of the touch electrodes TE.

And, in order to sequentially supply a touch driving signal to each of the plurality of touch electrodes TE, the touch system sequentially connects the sensing lines SL connected to each of the plurality of touch electrodes TE to the touch circuit 150 A switch circuit 160 may be further included.

The switch circuit 160 may include at least one multiplexer.

Meanwhile, referring to FIG. 1 , each of the plurality of touch electrodes TE may have a block shape.

Also, each touch electrode TE may have the same size as or corresponding to the size of one sub-pixel SP area.

Alternatively, each touch electrode TE may have a size larger than the size of the area of the subpixel SP, as shown in FIG. 1 .

That is, an area of each touch electrode TE may have a size corresponding to an area of two or more subpixels SP.

Meanwhile, referring to FIG. 1 , the plurality of touch electrodes TE described above may be embedded in the display panel 110 .

In this sense, the display panel 110 may be said to have a built-in touch screen or a touch screen panel. That is, the display panel 110 may be an in-cell type or an on-cell type touch screen embedded display panel.

Meanwhile, the touch screen embedded display device 100 according to the present invention may operate in a display mode to provide a display function, or may operate in a touch mode to provide a touch sensing function.

In this regard, the plurality of touch electrodes TE operate as touch sensors in the touch mode section, but may also be used as display mode electrodes in the display mode section.

For example, in the display mode section, the plurality of touch electrodes TE may operate as a common electrode to which the common voltage Vcom is applied, as an example of the display mode electrodes.

Here, the common voltage Vcom is a voltage corresponding to the pixel voltage applied to the pixel electrode.

Meanwhile, the plurality of touch electrodes TE embedded in the display panel 110 may be arranged in a matrix type of N (N ≥ 2) rows and M (M ≥ 2) columns, as shown in FIG. 1 . .

2 is a diagram illustrating capacitance components (Cself, Cpara1, Cpara2) generated in a touch mode in the touch screen embedded display device 100 according to the present invention.

Referring to FIG. 2 , a plurality of touch electrodes TE serving as a touch electrode in the touch mode and a common electrode (Vcom electrode) forming a pixel electrode and a liquid crystal capacitor in the display mode are provided with a touch in the touch mode. and a pointer such as a finger and a pen and self-capacitance (Cself) to detect touch coordinates and the like. Meanwhile, the plurality of touch electrodes TE serving as a common electrode may form parasitic capacitances Cpara1 and Cpara2 with the gate line and the data line as well, but they are very small compared to the self-capacitance and can be ignored.

Below, a plurality of touch electrodes TE11 to TE14, TE21 to TE24, TE31 serving as a display panel 110, a common electrode, and a touch electrode included in the touch screen embedded display device 100 according to an embodiment of the present invention. ~TE34), a method of applying a common voltage and a touch driving signal, a method of applying a data voltage and a touch driving signal (or a signal corresponding thereto) to the data line DL, and a data voltage and touch to the gate line GL A method of applying the driving signal (or a signal corresponding thereto) and the like will be described in more detail.

3 is a plan view of a display panel included in the touch screen embedded display device according to the present invention.

Referring to FIG. 3 , as described above, the display panel 110 includes a plurality of data lines DL, a plurality of gate lines GL, and a plurality of touch electrodes TE11 to TE14, TE21 to TE24, TE31 to TE34. ) is formed.

Also, as described above, the display panel 110 may operate in a display mode or in a touch mode.

In this regard, the plurality of data lines DL and the plurality of gate lines GL formed on the display panel 110 are configured so that the display panel 110 serves as a display panel.

In addition, the plurality of touch electrodes TE11 to S14 , TE21 to TE24 , and TE31 to TE34 formed on the display panel 110 are configured so that the display panel 110 serves both as a display panel and as a touch screen panel.

More specifically, when the display panel 110 functions as a display panel, that is, when the driving mode of the display panel 110 is the display mode, the plurality of electrodes TE11 to TE14, TE21 to TE24, TE31 to TE34 ) becomes a "common electrode (also referred to as a "Vcom electrode") facing the pixel electrode (a first electrode, not shown) to which a common voltage (Vcom) is applied.

And, when the display panel 110 serves as a touch screen panel, that is, when the driving mode of the display panel 110 is the touch mode, the plurality of touch electrodes TE11 to TE14, TE21 to TE24, TE31 to TE34 are , a touch driving voltage is applied, and a touch pointer (eg, a finger, a pen, etc.) and a capacitor are formed, and the capacitance of the capacitor thus formed becomes a “touch electrode” to be measured.

In other words, the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 serve as a common electrode (Vcom electrode) in the display mode, and serve as a touch electrode in the touch mode.

In the display mode, the common voltage Vcom is applied to the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34, and in the touch mode, a touch driving signal is applied.

Accordingly, as shown in FIG. 3 , in order to transfer a common voltage or a touch driving signal to the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34, the plurality of touch electrodes TE11 to TE14 and TE21 Sensing lines SL11 to SL14, SL21 to SL24, and SL31 to SL34 may be connected to ~TE24, TE31 to TE34).

Accordingly, in the touch mode, the touch driving signal Vtd generated by the touch circuit 150 and the switching circuit 160 is applied to the plurality of touches through the sensing lines SL11 to SL14, SL21 to SL24, and SL31 to SL34. It is transmitted to all or part of the electrodes TE11 to TE14, TE21 to TE24, TE31 to TE34, and in display mode, through the sensing lines SL11 to SL14, SL21 to SL24, SL31 to SL34, a common voltage supply unit (not shown) ) is applied to the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34.

Referring to FIG. 3 , each intersecting point of the plurality of data lines DL and the plurality of gate lines GL formed on the display panel 110 corresponds to one subpixel (SP). Here, each sub-pixel may be one of a red (R) sub-pixel, a green (G) sub-pixel, a blue (B) sub-pixel, and a white (W) sub-pixel.

Referring to FIG. 3 , in an area (hereinafter, also referred to as a unit touch electrode area) in which each of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 serving as a common electrode and a touch electrode is formed, two The above sub-pixels SP may be defined. That is, one electrode of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 corresponds to two or more subpixels SP.

For example, 24*3 data lines ( DL) and 24 gate lines GL are disposed to define 24*3*24 sub-pixels SP.

Meanwhile, each of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 serving as a common electrode and a touch electrode may have a block-shaped pattern as shown in FIG. 3 , and in some cases , may be a pattern including a comb-tooth-shaped pattern in an area corresponding to each sub-pixel SP.

The present invention may also be applied to a case in which each of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 serving as a common electrode and a touch electrode is a pattern including a comb-toothed portion.

4 is a view exemplarily showing a cross-sectional view of a display panel when the touch screen embedded display device 100 according to an embodiment of the present invention is a liquid crystal display device.

4 is a cross-sectional view illustrating an area (unit touch electrode area) in which one of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 serving as a common electrode and a touch electrode is formed.

Referring to FIG. 4 , in the display panel 110 included in the touch screen embedded display device 100 , for example, a gate line 402 is formed on a lower substrate 400 in a first direction (horizontal direction, left and right in FIG. 3 ). direction), and a gate insulating layer (Gate Insulator, 404) is formed thereon.

A data line 406 is formed on the gate insulating layer 404 in a second direction (vertical direction, a direction perpendicular to the ground in FIG. 3 ), and a first protective layer 408 is formed thereon.

A pixel electrode 410 and a sensing line 412 of each sub-pixel region may be formed on the first passivation layer 408 , and a second passivation layer 414 may be formed thereon. Here, the sensing line 412 is connected from each of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 serving as the common electrode and the touch electrode to the switching circuit 160, and in the display mode, the common voltage The common voltage Vcom generated by the supply is transferred to the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34, and in the touch mode, the touch generated by the touch circuit 150 and the switch circuit 160 The driving signal is transmitted to the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34.

One electrode 416 serving as a common electrode and a touch electrode is formed on the second protective layer 414 , and a liquid crystal layer 418 is formed thereon. Here, one electrode 416 serving as a common electrode and a touch electrode is one of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34, and may be a pattern having a block shape.

An upper substrate 420 on which a black matrix 419a, a color filter 419b, and the like is formed is positioned on the liquid crystal layer 418 .

Although the liquid crystal display is described in FIG. 4 , the present invention is not limited thereto and may be applied to various display devices that can be combined with a touch panel.

5 is another plan view of a display panel included in the touch screen embedded display device 100 according to the present invention.

Referring to FIG. 5 , unlike in FIG. 3 , sensing lines SL11 to SL14, SL21 to connected to each of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 transmit a touch driving signal or a common voltage. SL24 and SL31 to SL34 may be formed parallel to the second direction (eg, a horizontal direction) in which the gate line GL is formed.

In this case, the touch driving signal generated by the touch circuit 150 and the switch circuit 160 of FIG. 1 or the common voltage generated or supplied from the common voltage supply unit is applied to the sensing lines SL11 to SL14 formed parallel to the gate line. Through SL21 to SL24 and SL31 to SL34, all or part of the plurality of touch electrodes TE11 to TE14, TE21 to TE24, and TE31 to TE34 may be transmitted.

Hereinafter, a manufacturing process for manufacturing a sensing line (SL11 to SL14, SL21 to SL24, SL31 to SL34, hereinafter touch sensing line in FIGS. 3 or 5) that transmits a touch driving signal to the common electrode shown in FIGS. 1 to 5 . Looking at the process, look at the manufacturing process of the present invention to reduce this manufacturing process.

The touch sensing line may be formed in the conductive metal layer (M3L or the third conductive layer) during the process.

In the aforementioned in-cell touch, since a separate touch sensing line is required to form a grouped or blocked touch electrode providing a common voltage, the number of separate masks may increase.

In the present invention, the activation layer and the source/drain electrodes of the thin film transistor are processed through a single mask process, and the first electrode (pixel electrode) disposed on the sub-pixel, the conductive metal layer for the touch sensing line, and the thin film transistor are formed on the By forming the thin film transistor protective layer (planarization layer or overcoat layer) in one mask process, the number of steps is reduced.

Examples of a thin-film transistor (Thin-Film Transistor) generated on a substrate (back plane) to which the present invention can be applied include amorphous silicon (hereinafter referred to as 'a-Si'), metal oxide, and polysilicon. (poly silicon), and polysilicon may include low temperature polysilicon (hereinafter referred to as 'LTPS') and high temperature polysilicon (hereinafter referred to as 'HTPS'). It is not limited.

6 is a view illustrating a reduction in the manufacturing process of the touch screen embedded display device according to the present invention.

Referring to FIG. 6 , in general, a process of forming a touch screen embedded display device includes a first mask process (Mask#1) for forming a gate line, a gate electrode of a thin film transistor, a gate pad, and the like, which are formed in each sub-pixel. A second mask process (Mask#2) for forming an activation layer of the thin film transistor, a third mask process (Mask #3) for forming a source electrode and a drain electrode on the activation layer, a first process for protecting the thin film transistor 1A fourth mask process (Mask#4) for forming a protective layer and a planarization layer, a fifth mask process (Mask#5) for forming a pixel electrode (first electrode) in each sub-pixel, and a touch sensing line are formed A sixth mask process (Mask#6) for forming a second protective layer on the pixel electrode and the touch sensing line, a seventh mask process (Mask#7) for forming a touch electrode (common electrode), and an eighth process for forming a touch electrode (common electrode) A mask process (Mask#8) is performed.

As described above, since a separate touch sensing line needs to be formed in order to form a touch screen-embedded display device, there is a disadvantage in that the number of processes increases.

In addition, when the number of mask processes increases, there is a problem in that production efficiency is lowered due to an increase in the production tac time, and there is a problem in that the defect generation rate is increased due to various contamination or particles that may occur during the process.

In the present invention, using a diffraction mask or a halftone mask, the activation layer, the source electrode, and the drain electrode forming process are performed in one mask process, and the first protective layer, the planarization layer, the pixel electrode, and the touch sensing line forming process are performed in three steps. By using the diffraction mask or halftone mask having the above different exposure areas to form in one mask process, there is an effect of reducing the number of mask processes.

In addition, in the present invention, the contact hole formed in the planarization layer corresponding to the source electrode (or drain electrode) of the thin film transistor and the contact hole (PC from below) of the protective layer formed in the contact hole region partially overlap each other (protective layer contact hole ( PC), to prevent electrical contact failure between the pixel electrode and the source electrode (or drain electrode) due to over-etching of the planarization layer when the contact hole of the protective layer is formed.

7 is a cross-sectional view illustrating structures of a sub-pixel area, a data pad area, and a gate pad area of a touch screen embedded display device according to an embodiment of the present invention.

The gate pad region and the data pad region may be simultaneously formed of the same material as materials for forming the thin film transistor in the subpixel region during the thin film transistor forming process.

Referring to FIG. 7 , the sub-pixel region of the touch screen embedded display device of the present invention includes a gate electrode 702 on a substrate 700 , a gate insulating layer 710 on the gate electrode 702 , and an activation layer (or A thin film transistor including an active layer, 712 , a source electrode 724 , and a drain electrode 726 is disposed. The source electrode and the drain electrode may be named interchangeably.

The gate electrode 702 may include double metal patterns or a plurality of metal patterns of the first gate electrode pattern 702a and the second gate electrode pattern 702b. In addition, the metal patterns may be formed in a structure in which a conductive metal pattern and a transparent conductive material pattern are mixed.

Also, a data line 714 is disposed on the gate insulating layer 710 , and the data line 714 may be formed of double patterns of a first data line pattern 714a and a second data line pattern 714b. have. The first data line pattern 714a may include a plurality of metal patterns. In addition, the metal patterns may be formed in a structure in which a conductive metal pattern and a transparent conductive material pattern are mixed.

The second data line pattern 714b may be formed of the same material as the activation layer since the source electrode 724, the drain electrode 726, and the activation layer 712 are formed through a single mask process in the present invention.

A first passivation layer 720 and a planarization layer 730 are disposed on the thin film transistor and the data line 714 , and a first contact hole C1 is formed in the source electrode 724 region of the thin film transistor. The planarization layer 730 may be an overcoat layer made of an organic film material.

Also, on the planarization layer 730 , a first electrode 740a and a second electrode 770a are disposed to overlap each other with a second protective layer 760 interposed therebetween. A connection pattern 770c formed of the same material as the second electrode 770a and electrically connecting the first electrode 740a and the source electrode 724 to each other is disposed in the region of the first contact hole C1. .

In particular, in the present invention, the first contact hole C1 is formed in the planarization layer 730, and the second protective layer 760 is formed on the planarization layer 730 including the first contact hole C1. When the second protective layer 760 formed in the first contact hole C1 region is removed (when the second protective layer contact hole is formed), the area where the second protective layer 760 is removed is the first contact hole C1 . ) and only partially overlapped.

Accordingly, as shown in the drawing, the first inclined surface S1 on which the second protective layer 760 is not formed and the second inclined surface on which the second protective layer 760 are present inside the first contact hole C1. (S2) is provided. As will be described in detail with reference to FIGS. 14A to 15 , the first inclined surface S1 is over-etched because it is exposed to an etching process for removing the second protective layer 760 , and is under the edge of the first electrode 740a. A cut structure is formed.

This undercut causes a contact failure between the connection pattern 770c and the first electrode 740a, and thus causes a problem that the first electrode 740a and the source electrode 724 cannot be electrically connected.

However, in the present invention, since a portion of the second protective layer 760 is left in the region of the first contact hole C1, the connection pattern 770c formed along the second protective layer 760 formed on the second inclined surface S2. ) is in electrical contact with the first electrode 740a in the lateral direction of the first electrode 740a without disconnection, unlike the region of the first inclined surface S1 (see FIG. 15 ).

Accordingly, the present invention can prevent a contact defect between the first electrode 724 and the connection pattern 770c that may occur due to an etching process for exposing the source electrode 724 in the first contact hole C1 region. there is an effect

In addition, a touch sensing line 750 is disposed on the planarization layer 730 overlapping the data line 714 . A first touch connection pattern 740b is disposed between the touch sensing line 750 and the planarization layer 730 , and a second touch connection pattern 770b is disposed on the touch sensing line 750 .

The touch sensing line 750 comes in contact with the second touch connection pattern 770b to transmit a touch driving signal to the second electrode 770a. The second electrode 770a is an electrode that functions as a common electrode in the display mode or a touch electrode in the touch mode.

In addition, in the data pad region, a data pad 716 is disposed on the gate insulating layer 710 , and the data pad 716 has a double pattern of a first data pad pattern 716a and a second data pad pattern 716b . can be formed with

The first data pad pattern 716a may include a plurality of metal patterns. In addition, the metal patterns may be formed in a structure in which a conductive metal pattern and a transparent conductive material pattern are mixed.

The second data pad pattern 716b may be formed of the same material as the active layer since the source electrode 724, the drain electrode 726, and the activation layer 712 are formed through a single mask process in the present invention.

The data pad 716 is electrically connected to the data pad contact electrode 770d through the second contact hole C2 formed by removing the first and second protective layers 720 and 760 .

In addition, a gate pad 704 is disposed on the substrate 700 in the gate pad region, and the gate pad 704 includes double metal patterns of the first gate pad pattern 704a and the second gate pad pattern 704b. Alternatively, it may be composed of a plurality of metal patterns. In addition, the metal patterns may be formed in a structure in which a conductive metal pattern and a transparent conductive material pattern are mixed.

The gate pad 704 has a gate pad contact electrode 770e through a third contact hole C3 formed by removing the gate insulating layer 710 , the first passivation layer 720 , and the second passivation layers 760 . is electrically connected to

The display device with a built-in touch screen of the present invention includes NxP thin film transistors, NxP first electrodes 740a (eg, pixel electrodes in one embodiment) connected to the source electrode or drain electrode of these thin film transistors apart from each other, and the first electrode and It is based on the configuration of P number of second electrodes 770a (common electrode in an embodiment) that face each other and provide the same signal to all of the plurality of pixels, that is, all of the N sub-pixels.

In particular, in the present invention, a touch driving signal may be transmitted to the plurality of second electrodes 770a. When the driving mode of the display panel 110 is the touch mode, the touch circuit 150 of FIG. 1 applies a touch driving signal to all or a part of the plurality of second electrodes 770a. In addition, the data driver 120 supplies data voltages to the plurality of data lines DL when the driving mode is the display mode, and the gate driver 130 provides the plurality of gate lines GL when the driving mode is the display mode. to sequentially supply scan signals to operate in display mode and touch mode.

In addition, in the display device with a built-in touch screen of the present invention, a diffraction mask or a halftone mask is used in the process of forming the activation layer 712 of the thin film transistor and the process of forming the source and drain electrodes 724 and 726, which were performed in two mask processes. By proceeding with one mask process used, the number of mask processes was reduced.

In addition, in the display device with a built-in touch screen of the present invention, a process of forming a contact hole after forming the planarization layer 730 , a process of forming a first electrode 740a (pixel electrode), and a process of forming a contact hole after forming the second protective layer 760 are performed. By proceeding with one mask process using a halftone mask or a diffraction mask having at least three different exposure areas, the number of mask processes is reduced. In this regard, it will be described in detail with reference to FIGS. 13A to 13H.

Hereinafter, a specific manufacturing process of the touch screen embedded display device of the present invention will be described with reference to the drawings.

8A to 12B are diagrams illustrating a manufacturing process of a touch screen embedded display device according to the present invention.

First, referring to FIGS. 8A and 8B , a substrate in which a sub-pixel area in which a plurality of sub-pixels are formed and a non-display area (gate pad area and data pad area) formed along the outermost periphery of the sub-pixel area are partitioned ( After forming a gate metal film on the 700), a gate electrode 702 is formed in the sub-pixel region according to the first mask process, and a gate pad 704 is formed in the gate pad region at the same time. The gate electrode 702 and the gate pad 704 are integrally formed with the gate line 702c, and the gate pad 704 is positioned at the edge of the gate line 702c.

The gate metal layer may be formed by stacking at least two or more metal layers, and may have a structure in which a metal layer and a transparent conductive material layer are stacked. Therefore, the metal layer is made of aluminum (Al), tungsten (W), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), molytungsten (MoW), molithanium (MoTi), copper/motitanium ( At least one selected from a group of conductive metals including Cu/MoTi) may be used, but is not limited thereto. In addition, the transparent conductive material layer may use any one selected from the group including Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and Carbon Nano Tube (CNT), but is not limited thereto. Since the gate metal layer is not limited to being configured in the form of a double metal layer, it may be configured in the form of a single metal layer.

Accordingly, the gate electrode 702 may include a first gate electrode pattern 702a and a second gate electrode pattern 702b, and the gate pad 704 also includes a first gate pad pattern 704a and a second gate electrode pattern 702b. It may be composed of a pad pattern 704b.

As described above, when the gate electrode 702 and the like are formed on the substrate 700 , as shown in FIGS. 9A and 9B , the gate insulating layer 710 is formed on the entire surface of the substrate 700 , and then the Thus, the semiconductor layer and the source/drain metal film are continuously formed.

The semiconductor layer may be formed of, for example, a semiconductor material such as amorphous silicon, or polysilicon such as LTPS or HTPS. In addition, the semiconductor layer is zinc oxide (Zinc Oxide, ZO), indium-gallium-zinc-oxide (Indium Galiumzinc Oxide, IGZO), zinc-indium oxide (Zinc Indium Oxide, ZIO), gallium doped zinc oxide (Ga doped ZnO) , ZGO) can be formed using an oxide semiconductor material.

Then, according to a second mask process using a diffraction mask or a halftone mask, an activation layer 712 , a source electrode 724 , and a drain electrode 726 are formed on the gate insulating layer 710 corresponding to the gate electrode 702 . ) to form The thin film transistor includes the gate electrode 702 , a gate insulating layer 710 , an activation layer 712 , a source electrode 724 , and a drain electrode 726 .

Also, at the same time, the data line 714 and the data pad 716 are formed in the data pad area.

Then, as shown in FIGS. 10A and 10B , a first protective layer 720 , a planarization layer 730 , a first metal layer and a second metal layer are successively formed on the entire surface of the substrate 700 , and then at least A first contact hole C1, a first touch connection pattern 740b, a first electrode 740a, and a touch sensing line 750 according to a third mask process using a halftone mask having three or more exposure areas or a diffraction mask ) to form This will be described in detail with reference to FIGS. 13A to 13H.

The first protective layer 720 may be formed of an inorganic material, for example, SiO2, SiNx, or an organic material, such as photoacrylic, but the present invention is not limited thereto.

Also, the planarization layer 730 may be formed of an overcoat layer made of an organic material. In addition, the planarization layer 730 is preferably made of a material that can be partially removed together during a photoresist ashing process.

In this case, the planarization layer 730 , the first metal layer, and the second metal layer are all removed from the gate pad region and the data pad region, leaving only the first passivation layer 720 .

As described above, when the first electrode 740a and the touch sensing line 750 are formed on the planarization layer 730 , as shown in FIGS. 11A and 11B , the second protective layer is formed on the entire surface of the substrate 700 . (760).

Then, according to a fourth mask process, a second contact hole C2 exposing a portion of the data pad 716 , a third contact hole C3 exposing a portion of the gate pad 704 , and a portion of the touch sensing line 750 . A fourth contact hole C4 exposing is formed.

At this time, in the present invention, a portion of the source electrode 724 is exposed by removing the second protective layer 760 formed in the first contact hole C1 region (also referred to as a protective layer contact hole PC forming process). By shifting the contact hole PC area of the second protective layer 760 by a predetermined distance from the first contact hole C1 area, the second protective layer 760 contact hole PC and the first contact hole C1 are partially separated. They overlap each other only in the area.

That is, as shown in FIG. 11A , it can be seen that the area of the first contact hole C1 and the contact hole PC of the second protective layer 760 formed by the dotted line partially overlap each other. Accordingly, the second passivation layer 760 is present in the non-overlapping area of the first contact hole C1 (the second inclined surface S2 of the first contact hole C1). Although the second protective layer 760 is not removed from the area of the second inclined surface S2 of FIG. 11B , it can be seen that the second protective layer 760 is removed from the overlapping area of the first inclined surface S1 .

In addition, while the second protective layer 760 of the first inclined surface S1 inside the first contact hole C1 is removed, the second protective layer of a partial region of the first electrode 740a on the upper surface of the planarization layer 730 adjacent thereto is removed. 760 is removed to expose an edge region of the first electrode 740a.

That is, as shown in FIG. 11B , a portion of the first electrode 740a is exposed in a boundary region between the first contact hole C1 and the first electrode 740a, and the first electrode 740a is exposed through the first contact hole C1. Although the second protective layer 760 of the inclined surface S1 is removed, the second protective layer 760 of the other second inclined surface S2 is not removed.

Accordingly, due to the formation of the contact hole PC of the second protective layer 760 , an undercut due to over-etching occurs on the lower side of the edge of the first electrode 740a and the first inclined surface S1 . Thereafter, when a connection pattern for electrically connecting the source electrode 724 and the first electrode 740a is formed in the undercut region, poor contact with the first electrode 740a occurs (see FIG. 14B ).

However, in the present invention, since the contact hole PC and the first contact hole C1 of the second protective layer 760 are staggered so as not to partially overlap, the second inclined surface from which the second protective layer 760 is not removed ( A connection pattern was made to be electrically connected to the first electrode 740a along S2).

Accordingly, there is an effect of improving contact defects occurring in the first contact hole C1 region without an additional process. This will be described in detail with reference to FIGS. 14A to 15 .

A fourth contact hole C4 is formed in a partial region of the touch sensing line 750 in the sub-pixel region due to the fourth mask process. The second protective layer 760 includes a touch sensing line 750 , a first touch connection pattern 740b , an exposed planarization layer 730 , and a first electrode 740a except for the fourth contact hole C4 . cover the

In the edge region of the first electrode 740a adjacent to the first contact hole C1, a portion of the second protective layer 760 is removed when the contact hole of the second protective layer 760 is formed to form the first electrode 740a. part of it is exposed. The exposed first electrode 740a is in contact with a connection pattern formed in the first contact hole C1 in a subsequent process.

As described above, when the second to fourth contact holes C2 , C3 , and C4 are formed, as shown in FIGS. 12A and 12B , a transparent conductive material is formed on the entire surface of the substrate 700 , and then, the fifth A second electrode 770a overlapping the first electrode 740a is formed on the second protective layer 760 according to a mask process. In addition, a connection pattern 770c for electrically connecting the exposed portion of the first electrode 740a and the source electrode 724 is formed.

In addition, the second touch connection pattern 770b for electrical connection with the exposed touch sensing line 750 of the fourth contact hole C4 and the exposed data pad 716 of the second contact hole C2 are electrically connected. A data pad contact electrode 770d for this purpose and a gate pad contact electrode 770e for electrical connection to the exposed gate pad 704 of the third contact hole C3 are simultaneously formed.

As described above, the touch screen embedded display device and manufacturing method according to the present invention can complete the lower substrate (array substrate) of the touch screen embedded display device using the first to fifth mask processes, so that the number of mask processes and It has the effect of reducing the production cost by reducing the process tak time.

In addition, the touch screen embedded display device and manufacturing method according to the present invention include a first contact hole region exposing a source electrode (or a drain electrode) of a thin film transistor, and a second protective layer contact hole region formed in the first contact hole region. By allowing only this portion to overlap, it is possible to improve contact defects caused by over-etching of the planarization layer.

13A to 13H are diagrams illustrating a process of forming a pixel electrode and a touch sensing line in a manufacturing process of a display device with a built-in touch screen according to the present invention.

13A to 13H , as shown in FIGS. 10A and 10B , the first protective layer 720 , the planarization layer 730 , the first metal layer 791 and the second A metal layer 792 is continuously formed.

Then, a photoresist layer is formed on the entire surface of the substrate 700 , and then an exposure and development process is performed using a diffraction mask or a halftone mask having at least three exposure regions. The mask may be a mask having first to third exposure areas excluding the completely non-exposed areas.

When the photoresist layer is a positive photoresist layer, a first pattern 1300a is formed in an area corresponding to the completely non-exposed area, a second pattern 1300b is formed in an area corresponding to the first exposure area, and the first exposure area The first photoresist layer pattern 1300 including the third pattern 1300c is formed in an area corresponding to the second exposure area having a higher transmittance.

The third exposure area corresponds to the full exposure area (transmittance 100%), and the photoresist film is removed during the development process.

The thicknesses of the first to third patterns 1300a , 1300b , and 1300c may be different from each other. As shown in the drawing, the first pattern 1300a corresponding to the completely unexposed area is formed on the substrate 700 . The thickness of the initially formed photoresist film may be the thickest. Since the second pattern 1300b is larger than the exposure amount of the first pattern 1300a and smaller than the exposure amount of the third pattern 1300c, it is thinner (smaller) than the thickness of the first pattern 1300a (smaller) and the thickness of the third pattern 1300c may be thicker than

In addition, the third pattern 1300c is disposed between the first and second patterns 1300a and 1300b, and after the first and second metal layers 791 and 792 are etched, 2 to prevent short circuit failure. It is preferred to have a width of ˜3 μm.

As described above, when the first photoresist layer pattern 1300 is formed on the second metal layer 792, using the first photoresist layer pattern 1300 as a mask, the exposed second metal layer 792 and the exposed second metal layer ( 792) An etching process for removing the lower first metal layer 791 is performed.

As shown in FIG. 13B , a first metal layer pattern 791a and a second metal layer pattern 792a are formed under the first photoresist layer pattern 1300 , and first and second portions of the data pad area and the gate pad area are formed. All of the metal layers 791 and 792 are removed.

Then, as shown in FIG. 13C , an ashing process is performed on the first photosensitive film pattern 1300 to remove the third pattern 1300c of the first photosensitive film pattern 1300 to remove the second photoresist pattern ( 1301) and a third photoresist pattern 1302 are formed.

At this time, a portion of the planarization layer 730 in the region where the first metal layer 791 and the second metal layer 792 are removed is removed to form a first contact hole C1 in a region corresponding to the source electrode 724 . . The planarization layer 730 is not completely removed from the inside of the first contact hole C1.

A portion of the planarization layer 730 of the data pad area and the gate pad area is also removed to be smaller than the thickness of the planarization layer 730 of the sub-pixel area.

As described above, when the second photoresist layer pattern 1301 and the third photoresist layer pattern 1302 are formed on the substrate 700, as shown in FIGS. 13D and 13E, the second and third photoresist layer patterns 1301, An etching process is performed using 1302 as a mask to form a touch sensing line 750 .

Then, an ashing process is performed to remove the third photoresist layer pattern 1302 , and a fourth photoresist layer pattern 1303 is formed. The fourth photoresist layer pattern 1303 is a pattern reduced in size than the size of the second photoresist layer pattern 1301 by an ashing process.

The planarization layer 730 remaining in the first contact hole C1 is completely removed by the ashing process to expose the first protective layer 720 on the source electrode 724 . In addition, the planarization layer 730 of the data pad region and the gate pad region is all removed to expose the first passivation layer 720 to the outside.

As described above, when the fourth photoresist pattern 1303 is formed, as shown in FIGS. 13F and 13G , an etching process is performed to form the first touch connection pattern 740b under the touch sensing line 750 . Also, a first electrode 740a is formed in the sub-pixel area at the same time.

Then, an etching process is additionally performed to remove the second metal layer pattern 792a existing on the first electrode 740a.

Then, as shown in FIG. 13H , the fourth photoresist pattern 1303 is removed to complete the first electrode 740a and the first electrode 740a of the lower substrate of the touch screen embedded display device.

As described above, in the display device and manufacturing method with a built-in touch screen according to the present invention, the first electrode (pixel electrode), the touch sensing line, and the planarization layer in the sub-pixel are formed in a single mask process, thereby reducing the mask process and reducing the process tak time. (Tac Time) can be reduced.

14A and 14B are views for explaining a structure of forming a contact hole of a second protective layer during a manufacturing process of a touch screen embedded display device according to the present invention, and FIG. 15 is a first contact of the touch screen embedded display device according to the present invention. A diagram for explaining an electrical connection structure between the first electrode and the connection pattern in the hole C1 region.

14A to 15 , in the fourth mask process of the manufacturing process of the touch screen embedded display device according to the present invention, a part of the second protective layer 760 is removed to form the second to fourth contact holes C2, C3, The process of forming C4) is carried out.

At this time, a process of exposing the source electrode 724 of the thin film transistor by removing the second protective layer 760 is also performed in the area of the first contact hole C1 formed in the planarization layer 730 . In this case, the first contact hole The planarization layer 730 on which (C1) is formed is over-etched by an etching process to form an undercut structure in the edge region of the first electrode 740a.

Accordingly, as shown in FIG. 14A , while the second protective layer 760 formed in the first contact hole C1 region is removed, a portion of the edge of the first electrode 740a protrudes into the first contact hole C1 region. you can see what has been

Accordingly, when all of the second protective layer 760 formed in the region of the first contact hole C1 is removed, an undercut due to over-etching occurs on all inclined surfaces of the first contact hole C1 in the first contact hole C1 . occurs along the perimeter of However, in the present invention, the area (protective layer contact hole area: PC) for removing the second passivation layer 760 from the area of the first contact hole C1 is shifted so that some of the inner inclined surfaces of the first contact hole C1 are shifted. Only the second protective layer 760 was removed, and the second protective layer 760 was not removed from the inside of some inclined surfaces.

Accordingly, as shown in FIG. 14B , an undercut is generated on the first inclined surface S1 of the left region of the first contact hole C1, so that the connection pattern 770c formed in the subsequent second electrode 770a forming process is formed. It can be seen that a contact failure that is not connected to the first electrode 740a occurs.

However, since the second protective layer 760 is not removed from the second inclined surface S2 of the first contact hole C1, an undercut is not generated.

Accordingly, as shown in FIG. 15 , in the connection pattern 770c , contact failure may occur in the undercut region, but in the region where the second protective layer 760 is not removed, the second protective layer 760 . ), the connection pattern 770c is connected to the side surface of the first electrode 740a along the circumference of the first contact hole C1 without being broken.

Accordingly, since the connection pattern 770c is connected to the first electrode 740a through the side surface of the first electrode 740a along the region where the second protective layer 760 exists, such as the second inclined surface S2, under The connection pattern 770c and the first electrode 740a can be connected by a different route even when a contact defect due to the cut occurs, so that the source electrode 724 and the first electrode 740a due to the fourth mask process are connected. It has the effect of preventing contact failure.

As described above, in the display device and manufacturing method with a built-in touch screen according to the present invention, the first electrode (pixel electrode), the touch sensing line, and the planarization layer in the sub-pixel are formed in a single mask process, thereby reducing the mask process and reducing the process tak time. (Tac Time) can be reduced.

In addition, the touch screen embedded display device and the manufacturing method according to the present invention include a contact hole region exposing a source electrode (or a drain electrode) of a thin film transistor and a protective layer contact hole region in which a portion of the protective layer formed in the contact hole region is removed. By preventing the partial overlap, contact failure between the pixel electrode (first electrode) and the source electrode (or drain electrode) due to over-etching of the planarization layer is prevented.

The above description and the accompanying drawings are merely illustrative of the technical spirit of the present invention, and those of ordinary skill in the art to which the present invention pertains can combine configurations within a range that does not depart from the essential characteristics of the present invention. , various modifications and variations such as separation, substitution and alteration will be possible. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: touch screen built-in display
110: display panel
120: data driver
130: gate driver
140: controller
150: touch circuit
160: switch circuit
700: substrate
750: touch sensing line

Claims (9)

a plurality of gate lines disposed on the substrate in a first direction;
a plurality of data lines disposed on the substrate in a second direction;
a thin film transistor disposed in each subpixel defined by crossing the gate line and the data line;
a first electrode spaced apart from the thin film transistor with the planarization layer therebetween;
a second electrode overlapped with the first electrode and a protective layer interposed therebetween;
a touch sensing line disposed on the planarization layer to be spaced apart from the first electrode and connected to the second electrode; and
A connection pattern having a contact hole in which a part of the planarization layer is removed to expose the source electrode or the drain electrode of the thin film transistor, and disposed inside the contact hole to electrically connect the first electrode and the source electrode or the drain electrode includes,
A connecting pattern is disposed on a first inclined surface among the inner inclined surfaces of the contact hole, and a protective layer and a connecting pattern are stacked on the second inclined surface,
The second electrode is disposed overlapping the first electrode,
The protective layer and the laminated connection pattern are electrically connected to the first electrode along the second inclined surface. According to claim 1,
The connection pattern is disposed on a protective layer disposed on a second inclined surface of the contact hole to be electrically connected to the first electrode. According to claim 1,
A first touch connection pattern is disposed between the touch sensing line and the planarization layer,
A display device having a second touch connection pattern disposed on the touch sensing line. According to claim 1,
The connection pattern is in electrical contact with the first electrode exposed by removing the protective layer from the contact hole region. forming a thin film transistor on a substrate;
sequentially forming a first protective layer, a planarization layer, a first metal layer, and a second metal layer on the substrate on which the thin film transistor is formed;
forming a photoresist film on the entire surface of the substrate on which the second metal layer is formed, and forming a first photoresist film pattern comprising a first pattern, a second pattern, and a third pattern using a mask having at least three exposure areas;
forming a first contact hole exposing a first electrode, a touch sensing line, and a source electrode or a drain electrode of a thin film transistor on the planarization layer by performing an etching process using the first photoresist pattern;
A second protective layer is formed on the substrate on which the touch sensing line is formed, and then a mask process is performed to expose a second contact hole exposing the data pad, a third contact hole exposing the gate pad, and exposing the touch sensing line. forming a fourth contact hole and the second protective layer contact hole; and
A transparent conductive material is formed on the substrate on which the second protective layer is formed, and then the first electrode and the first electrode are formed in the overlapping second electrode and the first contact hole region with the first electrode and the second protective layer interposed therebetween according to a mask process. Forming a connection pattern for connecting the source electrode or the drain electrode of the thin film transistor,
The second electrode is disposed overlapping the first electrode,
The connection pattern is disposed on a first inclined surface among the inner inclined surfaces of the first contact hole, and the second protective layer and the connection pattern are stacked on a second inclined surface,
The second protective layer and the stacked connection pattern are electrically connected to the first electrode along the second inclined surface. 6. The method of claim 5,
The first to third patterns have different thicknesses from each other. 6. The method of claim 5,
Forming a first contact hole exposing the first electrode, the touch sensing line, and the source electrode or the drain electrode of the thin film transistor by using the first photoresist pattern,
etching the first and second metal layers using the first photoresist pattern to form first and second metal layer patterns, and performing an ashing process to form second and third photoresist patterns;
forming a touch sensing line by performing an etching and ashing process to remove a portion of the second metal layer pattern using the second and third photoresist patterns;
forming a first contact hole and a fourth photoresist layer pattern by performing an ashing process on the substrate on which the touch sensing line is formed; and
and forming a first electrode on the planarization layer by etching the second metal layer pattern using the fourth photoresist pattern as a mask. 6. The method of claim 5,
After forming the second protective layer, a mask process is performed to form a second contact hole, a third contact hole, a fourth contact hole, and a second protective layer contact hole,
The second passivation layer contact hole overlaps only a partial region of the first contact hole so that the second passivation layer is removed from the first inclined surface in the first contact hole, and the second passivation layer remains on the second inclined surface. A method for manufacturing a display device. 9. The method of claim 8,
The connection pattern is formed on a first inclined surface and a second protective layer on the second inclined surface in the first contact hole, and is electrically connected to the first electrode.

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