KR102380132B1 - Organic light emitting device, display device having the same and fabrication method of display device - Google Patents

Abstract

The organic light emitting device includes a first sub organic light emitting device, a second sub organic light emitting device, a third sub organic light emitting device, and a fourth sub organic light emitting device. The first sub organic light emitting diode includes a first anode, a first common light emitting part, and a first sub light emitting part. The second sub organic light emitting diode includes a second anode, a second common light emitting part, a first auxiliary layer, and a second sub light emitting part. The third sub organic light emitting diode includes a third anode and a third common light emitting part. The fourth sub organic light emitting diode includes a fourth anode, a fourth common light emitting part, and a light emitting layer emitting the first light. The first sub light emitting unit and the second sub light emitting unit are integral with each other, and a second light is emitted. The first common light emitting unit, the second common light emitting unit, the third common light emitting unit, and the fourth common light emitting unit are integrally formed, and a third light is emitted. The third light has a longer wavelength region than at least one of the first light and the second light.

Description

Organic light emitting device, display device including same, and method of manufacturing display device

The present invention relates to an organic light emitting diode, a display device including the same, and a method of manufacturing the display device.

A flat display device can be broadly classified into a light-emitting type and a light-receiving type. The light emitting type includes a flat cathode ray tube, a plasma display panel, and an organic light emitting display (OLED). The organic light emitting display device includes an organic light emitting device. The organic light emitting diode display is a self-luminous display device, and has advantages of a wide viewing angle, excellent contrast, and fast response speed.

Accordingly, the organic light emitting display device is a display device for a mobile device such as a digital camera, a video camera, a camcorder, a portable information terminal, a smart phone, an ultra-thin laptop computer, a tablet personal computer, a flexible display device, or an ultra-thin display device. It is receiving attention because it can be applied to large electronic products such as televisions or large electrical products.

The organic light emitting display device can realize color by recombining holes and electrons injected into the anode and the cathode in the light emitting layer to emit light. glow

It is an object of the present invention to provide an organic light emitting device with high efficiency and long life.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a display device with high efficiency and long life.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a display device capable of providing a display device with high efficiency and a long lifespan.

An organic light emitting device according to an embodiment of the present invention includes a first sub organic light emitting device, a second sub organic light emitting device, a third sub organic light emitting device, and a fourth sub organic light emitting device. The first sub organic light emitting diode includes a first anode, a first common light emitting part, and a first sub light emitting part. The second sub organic light emitting diode includes a second anode, a second common light emitting part, a first auxiliary layer, and a second sub light emitting part. The third sub organic light emitting diode includes a third anode and a third common light emitting part. The fourth sub organic light emitting diode includes a fourth anode, a fourth common light emitting part, and a light emitting layer emitting the first light. The first sub light emitting unit and the second sub light emitting unit are integral with each other, and a second light is emitted. The first common light emitting unit, the second common light emitting unit, the third common light emitting unit, and the fourth common light emitting unit are integrally formed, and a third light is emitted. The third light has a longer wavelength region than at least one of the first light and the second light.

The first light may have a wavelength range of 620 nm to 750 nm, the second light may have a wavelength range of 440 nm to 490 nm, and the third light may have a wavelength range of 495 nm to 570 nm.

The first sub light emitting device emits light in a wavelength range of 440 nm to 458 nm, the second sub light emitting device emits light in a wavelength range of 459 nm to 490 nm, and the third sub light emitting device emits light in a wavelength range of 495 nm to 570 nm The light in the region may be emitted, and the fourth sub-light emitting device may emit light in the wavelength region of 620 nm to 750 nm.

The first auxiliary layer may be provided between the second common light emitting unit and the second sub light emitting unit or on the second sub light emitting unit.

The fourth sub organic light emitting diode may further include a second auxiliary layer. The second auxiliary layer may be provided between the fourth common light emitting part and the light emitting layer or on the light emitting layer.

The first sub organic light emitting device further includes a first intermediate auxiliary part provided between the first common light emitting part and the first sub light emitting part, and the second sub organic light emitting device includes the second common light emitting part and the A second intermediate auxiliary portion provided between the first auxiliary layers may be further included, and the first intermediate auxiliary portion and the second intermediate auxiliary portion may be integrally formed.

The first sub organic light emitting device, the second sub organic light emitting device, and the third sub organic light emitting device may be provided to be spaced apart from each other.

A display device according to an embodiment of the present invention is divided into a first emission region, a second emission region, a third emission region, and a fourth emission region that are spaced apart from each other. A display device according to an exemplary embodiment includes a base substrate, a first common emission layer, a second common emission layer, a first auxiliary layer, and an emission layer. The base substrate is positioned in the first light emitting area, the second light emitting area, and the third light emitting area and is integral therewith. The first common emission layer is located in the first emission region, the second emission region, the third emission region, the fourth emission region, and the non-emission region, is provided on the base substrate, and is integral therewith. The second common emission layer is located in the first emission region and the second emission region, is provided on the first common emission layer, and is integral therewith. The first auxiliary layer is disposed in the second light emitting area, and is provided between the first common light emitting layer and the second common light emitting layer or on the second common light emitting layer. The light emitting layer is disposed in the fourth light emitting area, is provided on the first common light emitting layer, and emits first light. The second common emission layer may emit a second light, and the first common emission layer may emit a third light having a longer wavelength region than at least one of the first light and the second light.

The first common emission layer may be provided entirely on the base substrate.

The second common emission layer may emit light in a wavelength region of 440 nm to 490 nm, and the emission layer may emit light in a wavelength region of 620 nm to 750 nm.

The first emission region emits light in a wavelength region of 440 nm to 458 nm, the second emission region emits light in a wavelength region of 459 nm to 490 nm, and the third emission region emits light in a wavelength region of 495 nm to 570 nm. may emit light, and the fourth light emitting region may emit light in a wavelength region of 620 nm to 750 nm.

The display device according to an embodiment of the present invention may further include a second auxiliary layer disposed in the fourth light emitting area and provided between the fourth common light emitting part and the light emitting layer or on the light emitting layer.

A display device according to an embodiment of the present invention is located in the first light emitting area and the second light emitting area, and is provided between the first common light emitting layer and the second common light emitting layer or on the second common light emitting layer, It may further include an intermediate auxiliary layer.

In a display device according to an embodiment of the present invention, the display device is disposed in the first emission region, the second emission region, the third emission region, and the fourth emission region, and is provided between the base substrate and the first common emission layer, , it may further include an integral hole transport region.

The hole transport region may include a hole injection layer provided on the base substrate and a hole transport layer provided on the hole injection layer. At least a portion of the hole transport layer may include a P-type dopant.

A display device according to an embodiment of the present invention is positioned in the first light emitting area, the second light emitting area, the third light emitting area and the fourth light emitting area, and includes the first common light emitting layer, the second common light emitting layer and the It may be provided on the light emitting layer and further include an integral electron transport region.

The electron transport region may include an electron transport layer provided on the first common emission layer, the second common emission layer, and the emission layer, and an electron injection layer provided on the electron transport layer.

The display device according to an embodiment of the present invention may be driven in the first mode, the second mode, or the third mode. In the first mode, light is emitted from each of the first light-emitting area, the second light-emitting area, the third light-emitting area, and the fourth light-emitting area. In the second mode, light is emitted from each of the first light emitting area, the third light emitting area, and the fourth light emitting area, and no light is emitted from the second light emitting area. In the third mode, light is emitted from each of the second light-emitting area, the third light-emitting area, and the fourth light-emitting area, and no light is emitted from the first light-emitting area.

In the method of manufacturing a display device according to an embodiment of the present invention, the first light emitting area and the second light emitting area are formed on a substrate divided into a first light emitting area, a second light emitting area, a third light emitting area and a fourth light emitting area. , providing a first common light emitting layer to be positioned in the third light emitting area and the fourth light emitting area, and a first auxiliary on the first common light emitting layer to be disposed in the second light emitting area using a first mask providing a layer, using a second mask, on the first common light emitting layer and the first auxiliary layer or on the first common light emitting layer and the second light emitting area so as to be located in the first light emitting area and the second light emitting area The method may include providing a second common emission layer between the first auxiliary layers and providing an emission layer on the first common emission layer to be disposed in the fourth emission region using a third mask.

In the method of manufacturing a display device according to an embodiment of the present invention, a second auxiliary layer is provided between the first common emission layer and the emission layer or on the emission layer to be disposed in the fourth emission region using a fourth mask. It may further include the step of

Each of the first mask, the second mask, and the third mask may be a fine metal mask.

According to the organic light emitting diode according to an embodiment of the present invention, efficiency can be increased and lifespan can be extended.

According to the display device according to an embodiment of the present invention, efficiency can be increased and lifespan can be extended.

According to the method of manufacturing a display device according to an embodiment of the present invention, it is possible to provide a display device capable of increasing efficiency and extending lifespan.

1 is a cross-sectional view schematically illustrating an organic light emitting diode according to an embodiment of the present invention.
2 is a cross-sectional view schematically illustrating an organic light emitting diode according to an embodiment of the present invention.
3 is a perspective view schematically illustrating a display device according to an exemplary embodiment.
4A is a circuit diagram of one of sub-pixels included in a display device according to an exemplary embodiment.
4B is a plan view illustrating one of sub-pixels included in a display device according to an exemplary embodiment.
4C is a schematic cross-sectional view corresponding to the line I-I' of FIG. 4B.
5 is a schematic plan view of sub-pixels included in a display device according to an exemplary embodiment.
6A to 6D are schematic plan views of light emitting regions included in a display device according to an exemplary embodiment.
7A is a schematic cross-sectional view corresponding to the line II-II' of FIG. 5 .
7B is a schematic cross-sectional view corresponding to the line II-II' of FIG. 5 .
8 is a flowchart schematically illustrating a method of manufacturing a display device according to an exemplary embodiment.
9A to 9F are schematic cross-sectional views sequentially illustrating a method of manufacturing a display device according to an exemplary embodiment.

The above objects, other objects, features and advantages of the present invention will be easily understood through the following preferred embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed subject matter may be thorough and complete, and that the spirit of the present invention may be sufficiently conveyed to those skilled in the art.

In describing each figure, like reference numerals have been used for like elements. In the accompanying drawings, the dimensions of the structures are enlarged than the actual size for clarity of the present invention. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, a second component may also be referred to as a first component. The singular expression includes the plural expression unless the context clearly dictates otherwise.

In the present application, terms such as "comprise" or "have" are intended to designate that a feature, number, step, operation, component, part, or a combination thereof described in the specification exists, but one or more other features It is to be understood that it does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof. Also, when a part of a layer, film, region, plate, etc. is said to be “on” another part, it includes not only the case where the other part is “directly on” but also the case where there is another part in between. Conversely, when a part, such as a layer, film, region, plate, etc., is "under" another part, this includes not only cases where it is "directly under" another part, but also a case where another part is in the middle.

Hereinafter, an organic light emitting diode according to an embodiment of the present invention will be described.

1 is a cross-sectional view schematically illustrating an organic light emitting diode according to an embodiment of the present invention. 2 is a cross-sectional view schematically illustrating an organic light emitting diode according to an embodiment of the present invention.

1 and 2 , the organic light emitting diode OEL according to an embodiment of the present invention includes a first sub organic light emitting device S_OEL1, a second sub organic light emitting device S_OEL2, and a third sub organic light emitting device. (S_OEL3) and a fourth sub organic light emitting element (S_OEL4). The first sub organic light emitting element S_OEL1 , the second sub organic light emitting element S_OEL2 , the third sub organic light emitting element S_OEL3 , and the fourth sub organic light emitting element S_OEL4 are provided to be spaced apart from each other on a cross-section.

The first sub organic light emitting diode S_OEL1 emits light in a wavelength range of, for example, 440 nm to 458 nm. The first sub organic light emitting device S_OEL1 may emit deep blue light. The first sub organic light emitting diode S_OEL1 may control a resonance distance to emit light in a wavelength range of 440 nm to 458 nm. The first sub organic light emitting diode S_OEL1 includes a first anode AN1 , a first common light emitting part CMLP1 , and a first sub light emitting which are sequentially stacked in a second direction DR2 intersecting the first direction DR1 . It includes a unit SMLP1 and a first cathode unit CATP1.

The second sub organic light emitting diode S_OEL2 emits light in a wavelength range of, for example, 459 nm to 490 nm. The second sub organic light emitting diode S_OEL2 may emit sky blue light. The second sub organic light emitting diode S_OEL2 may control a resonance distance to emit light in a wavelength range of 459 nm to 490 nm. The second sub organic light emitting device S_OEL2 includes a second anode AN2 , a second common light emitting part CMLP2 , a first auxiliary layer AL1 , a second sub light emitting part SMLP2 , and a second cathode part CATP2 . includes The second anode AN2 , the second common light emitting part CMLP2 , the first auxiliary layer AL1 , the second sub light emitting part SMLP2 , and the second cathode part CATP2 are sequentially arranged in the second direction DR2 . can be stacked. In addition, although not shown, the second anode AN2 , the second common light emitting part CMLP2 , the second sub light emitting part SMLP2 , the first auxiliary layer AL1 , and the second cathode part CATP2 are disposed in the second direction. (DR2) may be sequentially stacked.

Even if the first sub light emitting part SMLP1 of the first sub organic light emitting device S_OEL1 and the second sub light emitting part SMLP2 of the second sub organic light emitting device S_OEL2 include the same material, the first sub organic light emitting device The device S_OEL1 does not include the first auxiliary layer AL1 , and the second sub organic light emitting device S_OEL2 includes the first auxiliary layer AL1 , so that the resonance distance of the first sub organic light emitting device S_OEL1 is not included. and the resonance distance of the second sub organic light emitting element S_OEL2 may be adjusted differently. Accordingly, the first sub organic light emitting device S_OEL1 may emit light in a wavelength range of, for example, 440 nm to 458 nm, and the second sub organic light emitting device S_OEL2 may emit light in a wavelength range of, for example, 459 nm to 490 nm. area light can be emitted.

The third sub organic light emitting element S_OEL3 emits light in a wavelength range of, for example, 495 nm to 570 nm. The third sub organic light emitting device S_OEL3 may emit green light. The third sub organic light emitting diode S_OEL3 may control the resonance distance to emit light in a wavelength range of 495 nm to 570 nm. The third sub organic light emitting element S_OEL3 includes a third anode AN3 , a third common light emitting part CMLP3 , and a third cathode part CATP3 that are sequentially stacked in the second direction DR2 .

The fourth sub organic light emitting diode S_OEL4 emits light in a wavelength range of, for example, 620 nm to 750 nm. The fourth sub organic light emitting diode S_OEL4 may emit red light. The fourth sub organic light emitting diode S_OEL4 may control a resonance distance to emit light in a wavelength range of 620 nm to 750 nm. The fourth sub organic light emitting diode S_OEL4 includes the fourth anode AN4 , the fourth common light emitting part CMLP4 , the light emitting layer EML1 , and the fourth cathode CATP4 sequentially stacked in the second direction DR2 . include

The first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 are provided to be spaced apart from each other in cross-section. The first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 are provided to be spaced apart from each other. The first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 may be a transmissive electrode, a transflective electrode, or a reflective electrode. When each of the first anode (AN1), the second anode (AN2), the third anode (AN3), and the fourth anode (AN4) is a transmissive electrode, the first anode (AN1), the second anode (AN2), the third Each of the anode AN3 and the fourth anode AN4 is formed of a transparent metal oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO). can be done When each of the first anode (AN1), the second anode (AN2), the third anode (AN3), and the fourth anode (AN4) is a transflective electrode or a reflective electrode, the first anode (AN1), the second anode ( AN2), the third anode AN3, and the fourth anode AN4 may each include Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a mixture of metals.

A hole transport region HTR is provided on the first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 . The hole transport region HTR includes a hole injection layer HIL and a hole transport layer HTL. The hole injection layer HIL and the hole transport layer HTL may be formed as one layer. The hole injection layer HIL and the hole transport layer HTL are formed as one layer and may include a p-type dopant. Although not shown, the hole transport region HTR may further include at least one of a hole buffer layer and an electron blocking layer.

The hole injection layer HIL may include a phthalocyanine compound such as copper phthalocyanine; DNTPD (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA(4,4' ,4"-tris(3-methylphenylphenylamino)triphenylamine), TDATA(4,4'4"-Tris(N,N-diphenylamino)triphenylamine), 2TNATA(4,4',4"-tris{N,-(2 -naphthyl)-N-phenylamino}-triphenylamine), PEDOT/PSS(Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate), PANI/DBSA(Polyaniline/Dodecylbenzenesulfonic acid), PANI/CSA(Polyaniline/Camphor sulfonicacid) ), PANI/PSS ((Polyaniline)/Poly(4-styrenesulfonate), etc., but is not limited thereto.

The hole injection layer HIL may further include a charge generating material to improve conductivity. The charge generating material may be uniformly or non-uniformly dispersed in the hole injection layer (HIL). The charge generating material may be, for example, a p-type dopant. At least a portion of the hole injection layer HIL may include a p-type dopant. The p-type dopant may be one of a quinone derivative, a metal oxide, and a cyano group-containing compound, but is not limited thereto. For example, non-limiting examples of the p-type dopant include quinone derivatives such as TCNQ (Tetracyanoquinodimethane) and F4-TCNQ (2,3,5,6-tetrafluoro-tetracyanoquinodimethane), and metal oxides such as tungsten oxide and molybdenum oxide. may be mentioned, but is not limited thereto.

The hole transport layer HTL is provided on the hole injection layer HIL. The hole transport layer (HTL) is a carbazole-based derivative such as N-phenylcarbazole and polyvinylcarbazole, a fluorine-based derivative, and TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl). -[1,1-biphenyl]-4,4'-diamine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), etc. triphenylamine derivatives, NPB (N,N'- di(1-naphthyl)-N,N'-diphenylbenzidine), TAPC (4,4'-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), etc., but is not limited thereto .

The hole transport region HTR includes a first hole transport region part HTRP1, a second hole transport region part HTRP2, a third hole transport region part HTRP3, a fourth hole transport region part HTRP4, and a fifth hole. It includes a transport region part HTRP5 , a sixth hole transport region part HTRP6 , and a seventh hole transport region part HTRP7 . a first hole transport region portion HTRP1, a fifth hole transport region portion HTRP5, a second hole transport region portion HTRP2, a sixth hole transport region portion HTRP6, a third hole transport region portion HTRP3; The seventh hole transport region part HTRP7 and the fourth hole transport region part HTRP4 are sequentially connected and integrated.

The first hole transport region HTRP1 is included in the first sub organic light emitting diode S_OEL1 . The first hole transport region HTRP1 overlaps the first anode AN1 . The second hole transport region HTRP2 is included in the second sub organic light emitting diode S_OEL2 . The second hole transport region HTRP2 overlaps the second anode AN2 . The third hole transport region HTRP3 is included in the third sub organic light emitting device S_OEL3 . The third hole transport region HTRP3 overlaps the third anode AN3 . The fourth hole transport region HTRP4 is included in the fourth sub organic light emitting device S_OEL4 . The fourth hole transport region HTRP4 overlaps the fourth anode AN4 . The fifth hole transport region part HTRP5 is provided between the first hole transport region part HTRP1 and the second hole transport region part HTRP2 . The sixth hole transport region part HTRP6 is provided between the second hole transport region part HTRP2 and the third hole transport region part HTRP3 . The seventh hole transport region part HTRP7 is provided between the third hole transport region part HTRP3 and the fourth hole transport region part HTRP4 .

The hole injection layer HIL includes a first hole injection part HILP1 , a second hole injection part HILP2 , a third hole injection part HILP3 , a fourth hole injection part HILP4 , and a fifth hole injection part HILP5 . ), a sixth hole injection part HILP6, and a seventh hole injection part HILP7. The first hole injection part HILP1, the fifth hole injection part HILP5, the second hole injection part HILP2, the sixth hole injection part HILP6, the third hole injection part HILP3, the seventh hole injection part The HILP7 and the fourth hole injection unit HILP4 are sequentially connected and integrated.

The first hole injection part HILP1 is included in the first sub organic light emitting element S_OEL1 . The second hole injection part HILP2 is included in the second sub organic light emitting device S_OEL2 . The third hole injection part HILP3 is included in the third sub organic light emitting element S_OEL3 . The fourth hole injection part HILP4 is included in the fourth sub organic light emitting diode S_OEL4 . The fifth hole injection part HILP5 is provided between the first hole injection part HILP1 and the second hole injection part HILP2 . The sixth hole injection part HILP6 is provided between the second hole injection part HILP2 and the third hole injection part HILP3 . The seventh hole injection part HILP7 is provided between the third hole injection part HILP3 and the fourth hole injection part HILP4 .

The hole transport layer HTL includes a first hole transport part HTLP1, a second hole transport part HTLP2, a third hole transport part HTLP3, a fourth hole transport part HTLP4, a fifth hole transport part HTLP5, and a sixth hole transport part. (HTLP6), and a seventh hole transporter (HTLP7). First hole transport unit (HTLP1), fifth hole transport unit (HTLP5), second hole transport unit (HTLP2), sixth hole transport unit (HTLP6), third hole transport unit (HTLP3), seventh hole transport unit (HTLP7), fourth The hole transport unit HTLP4 is sequentially connected and integral.

The first hole transport part HTLP1 is included in the first sub organic light emitting device S_OEL1 . The second hole transport part HTLP2 is included in the second sub organic light emitting device S_OEL2 . The third hole transport part HTLP3 is included in the third sub organic light emitting device S_OEL3 . The fourth hole transport unit HTLP4 is included in the fourth sub organic light emitting device S_OEL4 . The fifth hole transport part HTLP5 is provided between the first hole transport part HTLP1 and the second hole transport part HTLP2. The sixth hole transport part HTLP6 is provided between the second hole transport part HTLP2 and the third hole transport part HTLP3. The seventh hole transport part HTLP7 is provided between the third hole transport part HTLP3 and the fourth hole transport part HTLP4.

A first common emission layer CML1 is provided on the hole transport region HTR. The first common emission layer CML1 may emit a third light. The third light may have a longer wavelength region than at least one of the first light and the second light. The third light may have a wavelength range of, for example, 495 nm to 570 nm. The first common emission layer CML1 may be made of, for example, a material that emits green light, and may include a fluorescent material or a phosphorescent material.

The first common emission layer CML1 may include a host and a dopant. The host is not particularly limited as long as it is a commonly used material, but for example, Alq3 (tris(8-hydroxyquinolino)aluminum), CBP(4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK(poly(n-vinylcabazole), ADN(9,10-di(naphthalene-2-yl)anthracene), TCTA(4,4',4''-Tris(carbazol-9-yl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN(3-tert-butyl-9,10-di(naphth-2-yl)anthracene), DSA(distyrylarylene), CDBP( 4,4'-bis(9-carbazolyl)-2,2''-dimethyl-biphenyl), MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene), etc. may be used. For example, a metal complex such as Ir(ppy)3(fac-tris(2-phenylpyridine)iridium) or an organometallic complex may be used.

The first common emission layer CML1 includes a first common emission part CMLP1 , a second common emission part CMLP2 , a third common emission part CMLP3 , a fourth common emission part CMLP4 , and a fifth common emission part CMLP2 . CMLP5), a sixth common light emitting unit CMLP6, and a seventh common light emitting unit CMLP7. The first common light emitting unit CMLP1 , the fifth common light emitting unit CMLP5 , the second common light emitting unit CMLP2 , the sixth common light emitting unit CMLP6 , the third common light emitting unit CMLP3 , and the seventh common light emitting unit (CMLP7) and the fourth common light emitting part CMLP4 are sequentially connected and integrated.

The first common light emitting part CMLP1 is included in the first sub organic light emitting element S_OEL1 . The first common light emitting part CMLP1 overlaps the first anode AN1 and the first hole transport region HTRP1. The second common light emitting part CMLP2 is included in the second sub organic light emitting element S_OEL2 . The second common light emitting part CMLP2 overlaps the second anode AN2 and the second hole transport region HTRP2. The third common light emitting part CMLP3 is included in the third sub organic light emitting element S_OEL3 . The third common light emitting part CMLP3 overlaps the third anode AN3 and the third hole transport region HTRP3. The fourth common light emitting part CMLP4 is included in the fourth sub organic light emitting element S_OEL4 . The fourth common light emitting part CMLP4 overlaps the fourth anode AN4 and the fourth hole transport region HTRP4. The fifth common light emitting part CMLP5 is provided between the first common light emitting part CMLP1 and the second common light emitting part CMLP2 . The sixth common light emitting part CMLP6 is provided between the second common light emitting part CMLP2 and the third common light emitting part CMLP3 . The seventh common light emitting part CMLP7 is provided between the third common light emitting part CMLP3 and the fourth common light emitting part CMLP4 .

A first auxiliary layer AL1 is provided on the first common emission layer CML1 . The first auxiliary layer AL1 is provided between the second common light emitting unit CMLP2 and the second sub light emitting unit SMLP2 or on the second sub light emitting unit SMLP2 . The first auxiliary layer AL1 is included in the second sub organic light emitting diode S_OEL2 . The first auxiliary layer AL1 is not included in the first sub organic light emitting element S_OEL2 , the third sub organic light emitting element S_OEL3 , and the fourth sub organic light emitting element S_OEL4 . The first auxiliary layer AL1 overlaps the second anode AN2 .

The first auxiliary layer AL1 may, for example, assist resonance in the second sub organic light emitting diode S_OEL2 . The first auxiliary layer AL1 may control a resonance distance in the second sub organic light emitting device S_OEL2 . The first auxiliary layer AL1 may control the second sub light emitting device S_OEL2 to emit light in a wavelength range of 459 nm to 490 nm. The first auxiliary layer AL1 may include, for example, the same material as the hole transport layer HTL .

Referring to FIG. 2 , a second auxiliary layer AL2 is provided on the first common emission layer CML1 . The second auxiliary layer AL2 may be provided on the emission layer EML1 . In FIG. 2 , the thickness of the first auxiliary layer AL1 and the thickness of the second auxiliary layer AL2 are the same as, for example, but the present invention is not limited thereto. The thicknesses of the layers AL2 may be different from each other.

The second auxiliary layer AL2 is provided between the fourth common light emitting part CMLP4 and the light emitting layer EML1 . The second auxiliary layer AL2 is included in the fourth sub organic light emitting diode S_OEL4 . The second auxiliary layer AL2 is not included in the first sub organic light emitting element S_OEL1 , the second sub organic light emitting element S_OEL2 , and the third sub organic light emitting element S_OEL3 . The second auxiliary layer AL2 overlaps the fourth anode AN4 .

The second auxiliary layer AL2 may, for example, assist resonance in the fourth sub organic light emitting diode S_OEL4 . The second auxiliary layer AL2 may control a resonance distance in the fourth sub organic light emitting device S_OEL4 . The second auxiliary layer AL2 may include, for example, the same material as the hole transport layer HTL.

Referring back to FIGS. 1 and 2 , the second common emission layer CML2 is provided on the first common emission layer CML1 . The second common emission layer CML2 may emit a second light. The second light may have a wavelength range of, for example, 440 nm to 490 nm. The second common emission layer CML2 may be made of a material emitting blue light, and may include a fluorescent material or a phosphorescent material. The second common emission layer CML2 may include, for example, a fluorescent material including PBD:Eu(DBM)3(Phen)(tris(dibenzoylmethanato)phenanthoroline europium) or perylene.

The second common emission layer CML2 may include a host and a dopant. The host is not particularly limited as long as it is a commonly used material, but for example, Alq3 (tris(8-hydroxyquinolino)aluminum), CBP(4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK(poly(n-vinylcabazole), ADN(9,10-di(naphthalene-2-yl)anthracene), TCTA(4,4',4''-Tris(carbazol-9-yl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN(3-tert-butyl-9,10-di(naphth-2-yl)anthracene), DSA(distyrylarylene), CDBP( 4,4'-bis(9-carbazolyl)-2,2''-dimethyl-biphenyl), MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene), etc. may be used. is, for example, PIQIr(acac)(bis(1-phenylisoquinoline)acetylacetonate iridium), PQIr(acac)(bis(1-phenylquinoline)acetylacetonate iridium), PQIr(tris(1-phenylquinoline)iridium) and PtOEP(octaethylporphyrin platinum) ), such as a metal complex or an organometallic complex, may be used.

The second common light emitting layer CML2 includes a first sub light emitting part SMLP1 , a second sub light emitting part SMLP2 , and a third sub light emitting part SMLP3 . The first sub light emitting unit SMLP1 , the third sub light emitting unit SMLP3 , and the second sub light emitting unit SMLP2 are sequentially connected and integrated.

The first sub light emitting part SMLP1 is included in the first sub organic light emitting element S_OEL1 . The first sub light emitting part SMLP1 overlaps the first anode AN1 , the first hole transport region HTRP1 , and the first common light emitting part CMLP1 . The second sub light emitting part SMLP2 is included in the second sub organic light emitting element S_OEL2 . The second sub light emitting part SMLP2 overlaps the second anode AN2 , the second hole transport region HTRP2 , the first auxiliary layer AL1 , and the second common light emitting part CMLP2 . The third sub light emitting unit SMLP3 is provided between the first sub light emitting unit SMLP1 and the second sub light emitting unit SMLP2 .

Referring to FIG. 2 , an intermediate auxiliary layer IML is provided between the first common emission layer CML1 and the second common emission layer CML2 . The intermediate auxiliary layer IML may prevent holes from being transported from the first common emission layer CML1 to the second common emission layer CML2 . Accordingly, the intermediate auxiliary layer IML may prevent the third light from being emitted from each of the first sub organic light emitting element S_OEL1 and the second sub organic light emitting element S_OEL2 .

The intermediate auxiliary layer IML includes a first intermediate auxiliary portion IMLP1 , a second intermediate auxiliary portion IMLP2 , and a third intermediate auxiliary portion IMLP3 . The first intermediate auxiliary unit IMLP1 , the third intermediate auxiliary unit IMLP3 , and the second intermediate auxiliary unit IMLP2 are sequentially connected and integrated.

The first intermediate auxiliary part IMLP1 is included in the first sub organic light emitting element S_OEL1 . The first intermediate auxiliary part IMLP1 overlaps the first anode AN1 , the first hole transport region HTRP1 , and the first common light emitting part CMLP1 . The second intermediate auxiliary part IMLP2 is included in the second sub organic light emitting element S_OEL2 . The second intermediate auxiliary portion IMLP2 overlaps the second anode AN2 , the second hole transport region portion HTRP2 , the first auxiliary layer AL1 , and the second common light emitting portion CMLP2 . The third intermediate auxiliary unit IMLP3 is provided between the first intermediate auxiliary unit IMLP1 and the second intermediate auxiliary unit IMLP2 .

Referring back to FIGS. 1 and 2 , the emission layer EML1 is provided on the first common emission layer CML1 . The light emitting layer EML1 is included in the fourth sub organic light emitting device S_OEL4 . The emission layer EML1 may emit the first light. The first light may have a wavelength range of, for example, 620 nm to 750 nm. The emission layer EML1 may be made of a material that emits red light, and may include a fluorescent material or a phosphorescent material. The emission layer EML1 may include, for example, a fluorescent material including PBD:Eu(DBM)3(Phen)(tris(dibenzoylmethanato)phenanthoroline europium) or perylene.

The emission layer EML1 may include a host and a dopant. The host is not particularly limited as long as it is a commonly used material, but for example, Alq3 (tris(8-hydroxyquinolino)aluminum), CBP(4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK(poly(n-vinylcabazole), ADN(9,10-di(naphthalene-2-yl)anthracene), TCTA(4,4',4''-Tris(carbazol-9-yl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN(3-tert-butyl-9,10-di(naphth-2-yl)anthracene), DSA(distyrylarylene), CDBP( 4,4'-bis(9-carbazolyl)-2,2''-dimethyl-biphenyl), MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene), etc. may be used. is, for example, PIQIr(acac)(bis(1-phenylisoquinoline)acetylacetonate iridium), PQIr(acac)(bis(1-phenylquinoline)acetylacetonate iridium), PQIr(tris(1-phenylquinoline)iridium) and PtOEP(octaethylporphyrin platinum) ), such as a metal complex or an organometallic complex, may be used.

Although not shown, an intermediate layer is provided between the second common emission layer CML2 and the electron transport region ETR, between the first common emission layer CML1 and the electron transport region ETR, and between the emission layer EML1 and the electron transport region ETR. A connection layer (not shown) may be provided. The intermediate connection layer (not shown) is formed between the second common emission layer CML2 and the electron transport region ETR, between the first common emission layer CML1 and the electron transport region ETR, and between the emission layer EML1 and the electron transport region ETR. ) may be to adjust the charge balance between

An electron transport region ETR is provided on the first common emission layer CML1 , the second common emission layer CML2 , and the emission layer EML1 . The electron transport region ETR may be entirely provided on the emission layer EML1 . The electron transport region ETR may further include an electron transport layer ETL and an electron injection layer EIL provided on the electron transport layer ETL. In this case, the electron injection layer EIL may be omitted.

The electron transport layer (ETL) is Alq3(Tris(8-hydroxyquinolinato)aluminum), TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2, 9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl-1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tert- butylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl) )-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato) aluminum), Bebq2 (berylliumbis(benzoquinolin-10-olate), ADN (9,10-di(naphthalene-2-yl)anthracene), and mixtures thereof. Electron transport layer (ETL) ) may have a thickness of about 100 A to about 1000 A, for example, about 150 A to about 500 A. When the thickness of the electron transport layer (ETL) satisfies the above-mentioned range, a satisfactory degree of electron transport without a substantial increase in driving voltage characteristics can be obtained.

The electron injection layer (EIL) may include, but is not limited to, a lanthanide metal such as LiF, Lithium quinolate (LiQ), Li2O, BaO, NaCl, CsF, or Yb, or a metal halide such as RbCl or RbI. The electron injection layer EIL may also be formed of a material in which an electron transport material and an insulating organo metal salt are mixed. The organometallic salt may be a material having an energy band gap of about 4 eV or more. Specifically, for example, the organometallic salt may include metal acetate, metal benzoate, metal acetoacetate, metal acetylacetonate, or metal stearate. can The electron injection layer EIL may have a thickness of about 1 Å to about 100 Å, or about 3 Å to about 90 Å. When the thickness of the electron injection layer EIL satisfies the above-described range, a satisfactory level of electron injection characteristics may be obtained without a substantial increase in driving voltage.

The electron transport region ETR includes a first electron transport region part ETRP1 , a second electron transport region part ETRP2 , a third electron transport region part ETRP3 , a fourth electron transport region part ETRP4 , and a fifth electron and a transport region part ETRP5 , a sixth electron transport region part ETRP6 , and a seventh electron transport region part ETRP7 . The first electron transport region part ETRP1 , the fifth electron transport region part ETRP5 , the second electron transport region part ETRP2 , the sixth electron transport region part ETRP6 , the third electron transport region part ETRP3 ; The seventh electron transport region part ETRP7 and the fourth electron transport region part ETRP4 are sequentially connected and integrated.

The first electron transport region ETRP1 is included in the first sub organic light emitting device S_OEL1 . The first electron transport region ETRP1 overlaps the first anode AN1 , the first hole transport region HTRP1 , the first common light emitting part CMLP1 , and the first sub light emitting part SMLP1 . The second electron transport region ETRP2 is included in the second sub organic light emitting device S_OEL2 . The second electron transport region ETRP2 includes the second anode AN2 , the second hole transport region HTRP2 , the second common light emitting part CMLP2 , the first auxiliary layer AL1 , and the second sub light emitting part AL1 . SMLP2) overlaps. The third electron transport region ETRP3 is included in the third sub organic light emitting device S_OEL3 . The third electron transport region ETRP3 overlaps the third anode AN3 , the third hole transport region HTRP3 , and the third common light emitting part CMLP3 . The fourth electron transport region ETRP4 is included in the fourth sub organic light emitting device S_OEL4 . The fourth electron transport region ETRP4 overlaps the fourth anode AN4 , the fourth hole transport region HTRP4 , the fourth common light emitting part CMLP4 , and the emission layer EML1 . The fifth electron transport region part ETRP5 is provided between the first electron transport region part ETRP1 and the second electron transport region part ETRP2 . The sixth electron transport region part ETRP6 is provided between the second electron transport region part ETRP2 and the third electron transport region part ETRP3 . The seventh electron transport region part ETRP7 is provided between the third electron transport region part ETRP3 and the fourth electron transport region part ETRP4 .

The electron transport layer ETL includes a first electron transport part ETLP1 , a second electron transport part ETLP2 , a third electron transport part ETLP3 , a fourth electron transport part ETLP4 , a fifth electron transport part ETLP5 , and a sixth electron transport part (ETLP6) and a seventh electron transport unit ETLP7. First electron transport unit ETLP1, fifth electron transport unit ETLP5, second electron transport unit ETLP2, sixth electron transport unit ETLP6, third electron transport unit ETLP3, seventh electron transport unit ETLP7, fourth The electron transport unit ETLP4 is sequentially connected and integrated.

The first electron transport unit ETLP1 is included in the first sub organic light emitting diode S_OEL1 . The second electron transport unit ETLP2 is included in the second sub organic light emitting diode S_OEL2 . The third electron transport unit ETLP3 is included in the third sub organic light emitting device S_OEL3 . The fourth electron transport unit ETLP4 is included in the fourth sub organic light emitting device S_OEL4 . The fifth electron transport unit ETLP5 is provided between the first electron transport unit ETLP1 and the second electron transport unit ETLP2 . The sixth electron transport unit ETLP6 is provided between the second electron transport unit ETLP2 and the third electron transport unit ETLP3 . The seventh electron transport unit ETLP7 is provided between the third electron transport unit ETLP3 and the fourth electron transport unit ETLP4 .

The electron injection layer EIL includes a first electron injection part EILP1 , a second electron injection part EILP2 , a third electron injection part EILP3 , a fourth electron injection part EILP4 , and a fifth electron injection part EILP5 . ), a sixth electron injection unit EILP6, and a seventh electron injection unit EILP7. The first electron injection unit EILP1 , the fifth electron injection unit EILP5 , the second electron injection unit EILP2 , the sixth electron injection unit EILP6 , the third electron injection unit EILP3 , and the seventh electron injection unit (EILP7) and the fourth electron injection unit (EILP4) are sequentially connected and integrated.

The first electron injection unit EILP1 is included in the first sub organic light emitting device S_OEL1 . The second electron injection unit EILP2 is included in the second sub organic light emitting device S_OEL2 . The third electron injection unit EILP3 is included in the third sub organic light emitting device S_OEL3 . The fourth electron injection unit EILP4 is included in the fourth sub organic light emitting device S_OEL4 . The fifth electron injection unit EILP5 is provided between the first electron injection unit EILP1 and the second electron injection unit EILP2 . The sixth electron injection unit EILP6 is provided between the second electron injection unit EILP2 and the third electron injection unit EILP3 . The seventh electron injection part EILP7 is provided between the third electron injection part EILP3 and the fourth electron injection part EILP4 .

A cathode CAT is provided on the electron transport region ETR. The cathode CAT is provided entirely on the electron transport region ETR. The cathode CAT may be a common electrode or a cathode. The cathode CAT may be a transmissive electrode, a transflective electrode, or a reflective electrode. When the cathode (CAT) is a transmissive electrode, the cathode (CAT) is Li, Ca, LiF/Ca, LiF/Al, Al, Mg, BaF, Ba, Ag, or a compound or mixture thereof (eg, Ag and Mg mixtures) may be included.

The cathode CAT may include an auxiliary electrode. The auxiliary electrode is a film formed by depositing the material to face the first common emission layer CML1, and a transparent metal oxide, for example, indium tin oxide (ITO), indium zinc oxide (IZO), ZnO ( zinc oxide), indium tin zinc oxide (ITZO), Mo, Ti, or the like.

When the cathode (CAT) is a transflective electrode or a reflective electrode, the cathode (CAT) is Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ca, LiF/Al, Mo, Ti, or a compound or mixture thereof (eg, a mixture of Ag and Mg). Alternatively, a plurality of layer structures including a reflective or semi-transmissive film formed of the above material and a transparent conductive film formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), etc. can be

When the organic light emitting device OEL is a top emission type, the first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 are reflective electrodes, and the cathode CAT is It may be a transmissive electrode or a transflective electrode. When the organic light emitting diode OEL is a bottom emission type, the first anode AN1, the second anode AN2, the third anode AN3, and the fourth anode AN4 are a transmissive electrode or a transflective electrode, and the cathode ( CAT) may be a reflective electrode.

The cathode CAT includes a first cathode unit CATP1, a second cathode unit CATP2, a third cathode unit CATP3, a fourth cathode unit CATP4, a fifth cathode unit CATP5, and a sixth cathode unit (CATP5). CATP6) and a seventh cathode unit CATP7. First cathode unit CATP1, fifth cathode unit CATP5, second cathode unit CATP2, sixth cathode unit CATP6, third cathode unit CATP3, seventh cathode unit CATP7, fourth The cathode portion CATP4 is sequentially connected and integral.

The first cathode part CATP1 is included in the first sub organic light emitting element S_OEL1 . The first cathode part CATP1 includes a first anode AN1, a first hole transport region HTRP1, a first common light emitting part CMLP1, a first sub light emitting part SMLP1, and a first electron transport region part ( ETRP1) overlaps with each. The second cathode part CATP2 is included in the second sub organic light emitting element S_OEL2 . The second cathode part CATP2 includes the second anode AN2 , the second hole transport region HTRP2 , the second common light emitting part CMLP2 , the first auxiliary layer AL1 , and the second sub light emitting part SMLP2 . and the second electron transport region ETRP2 respectively. The third cathode unit CATP3 is included in the third sub organic light emitting element S_OEL3 . The third cathode part CATP3 overlaps each of the third anode AN3 , the third hole transport region HTRP3 , the third common light emitting part CMLP3 , and the third electron transport region ETRP3 . The fourth cathode unit CATP4 is included in the fourth sub organic light emitting element S_OEL4 . The fourth cathode part CATP4 overlaps the fourth anode AN4 , the fourth hole transport region HTRP4 , the fourth common light emitting part CMLP4 , the emission layer EML1 , and the fourth electron transport region ETRP4 . do. The fifth cathode unit CATP5 is provided between the first cathode unit CATP1 and the second cathode unit CATP2 . The sixth cathode unit CATP6 is provided between the second cathode unit CATP2 and the third cathode unit CATP3 . The seventh cathode unit CATP7 is provided between the third cathode unit CATP3 and the fourth cathode unit CATP4 .

In the organic light emitting device OEL, as voltages are applied to the first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 and the cathode CAT, respectively, the first anode Holes injected from the AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 pass through the hole transport region HTR, and the first common light emitting layer CML1 , the first 2 Moving to the common emission layer CML2 and the emission layer EML1, electrons injected from the cathode CAT pass through the electron transport region ETR to the emission layer EML1, the second common emission layer CML2, and the first common emission layer ( Go to CML1). Electrons and holes recombine in the emission layer EML1 , the first common emission layer CML1 , and the second common emission layer CML2 to generate excitons, and the excitons fall from the excited state to the ground state and emit light.

In general, in a conventional organic light emitting device including a sub organic light emitting device emitting sky blue light and a sub organic light emitting device emitting deep blue light at the same time, a light emitting layer emitting sky blue light and a light emitting layer emitting deep blue light was formed as a separate process, so the manufacturing process was complicated, and there was a problem in that the luminous efficiency was lowered due to foreign substances during manufacturing.

In the organic light emitting device according to an embodiment of the present invention, the light emitting layer for emitting sky blue light and the light emitting layer for emitting deep blue light are formed as a single layer in a single process, so that the manufacturing process can be simplified, and foreign matter during manufacturing By reducing the frequency of exposure to the back, it is possible to prevent a decrease in luminous efficiency.

Hereinafter, a display device according to an embodiment of the present invention will be described. Hereinafter, the difference between the organic light emitting diode according to the embodiment of the present invention described above will be described in detail, and parts that are not described are based on the organic light emitting diode according to the above-described embodiment of the present invention.

3 is a perspective view schematically illustrating a display device according to an exemplary embodiment.

Referring to FIG. 3 , the display device 10 according to an exemplary embodiment is divided into a display area DA and a non-display area NDA. The display area DA displays an image. When viewed in the thickness direction (eg, DR4 ) of the display device 10 , the display area DA may have a substantially rectangular shape, but is not limited thereto.

The display area DA includes a plurality of pixel areas PA. The pixel areas PA may be arranged in a matrix form. A plurality of pixels PX may be disposed in the pixel areas PA. Each of the pixels PX may include sub-pixels. Each of the pixels PX includes an organic light emitting diode (OEL of FIG. 1 ). Each of the pixels PX may include a first sub-pixel SPX1 , a second sub-pixel SPX2 , a third sub-pixel SPX3 , and a fourth sub-pixel SPX4 .

The non-display area NDA does not display an image. When viewed in the thickness direction DR4 of the display device 10 , the non-display area NDA may surround the display area DA, for example. The non-display area NDA may be adjacent to the display area DA in the first direction DR1 and the third direction DR3 . The third direction DR3 intersects each of the first direction DR1 and the second direction DR2 .

The display device 10 according to an embodiment of the present invention may be driven in the first mode, the second mode, or the third mode. In the first mode, light is emitted from each of the first light-emitting area (EA1 in FIG. 5), the second light-emitting area (EA2 in FIG. 5), the third light-emitting area (EA3 in FIG. 5), and the fourth light-emitting area (EA4 in FIG. 5). this is released In the second mode, light is emitted from each of the first light emitting area (EA1 in FIG. 5 ), the third light emitting area (EA3 in FIG. 5 ), and the fourth light emitting area (EA4 in FIG. 5 ), and the second light emitting area ( EA4 in FIG. 5 ) of EA2) does not emit light. In the third mode, light is emitted from each of the second light-emitting area (EA2 in FIG. 5), the third light-emitting area (EA3 in FIG. 5), and the fourth light-emitting area (EA4 in FIG. 5), and the first light-emitting area (EA4 in FIG. 5) of EA1) does not emit light.

4A is a circuit diagram of one of sub-pixels included in a display device according to an exemplary embodiment. 4B is a plan view illustrating one of sub-pixels included in a display device according to an exemplary embodiment. 4C is a schematic cross-sectional view corresponding to the line I-I' of FIG. 4B.

4A to 4C , each of the sub-pixels SPX may be connected to a wiring unit including a gate line GL, a data line DL, and a driving voltage line DVL. Each of the sub-pixels SPX includes the thin film transistors TFT1 and TFT2 connected to the wiring part, the sub organic light emitting element S_OEL connected to the thin film transistors TFT1 and TFT2, and the capacitor Cst. Each of the sub-pixels SPX may emit light of a specific color, for example, one of red light, green light, and blue light.

The gate line GL extends in the first direction DR1 . The data line DL extends in a third direction DR3 crossing the gate line GL. The driving voltage line DVL extends in substantially the same direction as the data line DL, that is, the third direction DR3. The gate line GL transfers a scan signal to the thin film transistors TFT1 and TFT2, the data line DL transfers a data signal to the thin film transistors TFT1 and TFT2, and the driving voltage line DVL transfers a scan signal to the thin film transistors TFT1 and TFT2. A driving voltage is provided to the TFT1 and TFT2).

The thin film transistors TFT1 and TFT2 may include a driving thin film transistor TFT2 for controlling the sub organic light emitting element S_OEL and a switching thin film transistor TFT1 for switching the driving thin film transistor TFT2 . In the exemplary embodiment of the present invention, each of the sub-pixels SPX includes two thin film transistors TFT1 and TFT2, but the present invention is not limited thereto, and each of the sub-pixels SPX includes one thin film transistor and one thin film transistor. A capacitor may be included, and each of the sub-pixels SPX may include three or more thin film transistors and two or more capacitors.

The switching thin film transistor TFT1 includes a first gate electrode GE1 , a first source electrode SE1 , and a first drain electrode DE1 . The first gate electrode GE1 is connected to the gate line GL, and the first source electrode SE1 is connected to the data line DL. The first drain electrode DE1 is connected to the first common electrode CE1 through the fifth contact hole CH5 . The switching thin film transistor TFT1 transmits the data signal applied to the data line DL to the driving thin film transistor TFT2 according to the scan signal applied to the gate line GL.

The driving thin film transistor TFT2 includes a second gate electrode GE2 , a second source electrode SE2 , and a second drain electrode DE2 . The second gate electrode GE2 is connected to the first common electrode CE1 . The second source electrode SE2 is connected to the driving voltage line DVL. The second drain electrode DE2 is connected to the anode AN through the third contact hole CH3 .

The capacitor Cst is connected between the second gate electrode GE2 and the second source electrode SE2 of the driving thin film transistor TFT2, and the data input to the second gate electrode GE2 of the driving thin film transistor TFT2 is Charge and maintain the signal. The capacitor Cst includes a first common electrode CE1 connected to the first drain electrode DE1 and the sixth contact hole CH6 and a second common electrode CE2 connected to the driving voltage line DVL. can do.

The display device 10 according to an exemplary embodiment includes a base substrate BS on which thin film transistors TFT1 and TFT2 and an organic light emitting diode (OEL of FIG. 1 ) are stacked. The base substrate BS includes a first light-emitting area (EA1 in FIG. 5), a second light-emitting area (EA2 in FIG. 5), a third light-emitting area (EA3 in FIG. 5), a fourth light-emitting area (EA4 in FIG. 5), and It is divided into non-emission areas (NEA1, NEA2, NEA3, and NEA4 in FIG. 5).

The base substrate BS is not particularly limited as long as it is commonly used, but may be formed of, for example, an insulating material such as glass, plastic, or crystal. Examples of the organic polymer constituting the base substrate BS include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, and polyethersulfone. The base substrate BS may be selected in consideration of mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, waterproofness, and the like.

A substrate buffer layer (not shown) may be provided on the base substrate BS. The substrate buffer layer (not shown) prevents impurities from diffusing into the switching thin film transistor TFT1 and the driving thin film transistor TFT2 . The substrate buffer layer (not shown) may be formed of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), etc., and may be omitted depending on the material and process conditions of the base substrate BS.

A first semiconductor layer SM1 and a second semiconductor layer SM2 are provided on the base substrate BS. The first semiconductor layer SM1 and the second semiconductor layer SM2 are made of a semiconductor material, and operate as active layers of the switching thin film transistor TFT1 and the driving thin film transistor TFT2, respectively. The first semiconductor layer SM1 and the second semiconductor layer SM2 each include a source region SA, a drain region DA, and a channel region CA provided between the source region SA and the drain region DA. do. The first semiconductor layer SM1 and the second semiconductor layer SM2 may be formed by selecting an inorganic semiconductor or an organic semiconductor, respectively. The source region SA and the drain region DA may be doped with an n-type impurity or a p-type impurity.

A gate insulating layer GI is provided on the first semiconductor layer SM1 and the second semiconductor layer SM2 . The gate insulating layer GI covers the first semiconductor layer SM1 and the second semiconductor layer SM2 . The gate insulating layer GI may be formed of an organic insulating material or an inorganic insulating material.

A first gate electrode GE1 and a second gate electrode GE2 are provided on the gate insulating layer GI. The first gate electrode GE1 and the second gate electrode GE2 are formed to cover regions corresponding to the channel regions CA of the first semiconductor layer SM1 and the second semiconductor layer SM2, respectively.

An interlayer insulating layer IL is provided on the first gate electrode GE1 and the second gate electrode GE2 . The interlayer insulating layer IL covers the first gate electrode GE1 and the second gate electrode GE2 . The interlayer insulating layer IL may be formed of an organic insulating material or an inorganic insulating material.

A first source electrode SE1 , a first drain electrode DE1 , a second source electrode SE2 , and a second drain electrode DE2 are provided on the interlayer insulating layer IL. The second drain electrode DE2 is in contact with the drain region DA of the second semiconductor layer SM2 by the first contact hole CH1 formed in the gate insulating layer GI and the interlayer insulating layer IL, and The second source electrode SE2 contacts the source region SA of the second semiconductor layer SM2 through the second contact hole CH2 formed in the gate insulating layer GI and the interlayer insulating layer IL. The first source electrode SE1 is in contact with a source region (not shown) of the first semiconductor layer SM1 by the fourth contact hole CH4 formed in the gate insulating layer GI and the interlayer insulating layer IL, The first drain electrode DE1 contacts a drain region (not shown) of the first semiconductor layer SM1 through the fifth contact hole CH5 formed in the gate insulating layer GI and the interlayer insulating layer IL.

A passivation layer PL is provided on the first source electrode SE1, the first drain electrode DE1, the second source electrode SE2, and the second drain electrode DE2. The passivation layer PL may serve as a protective film protecting the switching thin film transistor TFT1 and the driving thin film transistor TFT2 , or may serve as a planarization film for planarizing an upper surface thereof.

An anode AN is provided on the passivation layer PL. The anode AN may be, for example, an anode. The anode AN is connected to the second drain electrode DE2 of the driving thin film transistor TFT2 through the third contact hole CH3 formed in the passivation layer PL.

5 is a schematic plan view of sub-pixels included in a display device according to an exemplary embodiment.

1, 2, 3, 4A to 4C, and 5 , each of the pixels PX includes sub-pixels SPX. Each of the pixels PX includes a first sub-pixel SPX1 , a second sub-pixel SPX2 , a third sub-pixel SPX3 , and a fourth sub-pixel SPX4 . Each of the sub-pixels SPX is divided into a light-emitting area and a non-emission area.

5 shows an example in which the first sub-pixel SPX1, the second sub-pixel SPX2, the third sub-pixel SPX3, and the fourth sub-pixel SPX4 are sequentially connected in the first direction DR1 on a plane. Although illustrated, the present invention is not limited thereto, and the first sub-pixel SPX1 , the second sub-pixel SPX2 , the third sub-pixel SPX3 , and the fourth sub-pixel SPX4 are aligned in the third direction DR3 on a plane view. may be sequentially connected, or the first sub-pixel SPX1 , the third sub-pixel SPX3 , and the second sub-pixel SPX2 may be sequentially connected in the first direction DR1 on a plane.

In addition, in FIG. 5 , the first sub-pixel SPX1 , the second sub-pixel SPX2 , the third sub-pixel SPX3 , and the fourth sub-pixel SPX4 have the same shape on the plane, and the sizes of the shapes are different from each other. Although the same is illustrated as an example, the present invention is not limited thereto, and each of the pixels PX includes a first sub-pixel SPX1 , a second sub-pixel SPX2 , a third sub-pixel SPX3 and a second sub-pixel SPX3 in a plan view. The shape or size of any one of the four sub-pixels SPX4 may be different.

In addition, in FIG. 5 , each of the pixels PX, the first sub-pixel SPX1 , the second sub-pixel SPX2 , the third sub-pixel SPX3 , and the fourth sub-pixel SPX4 has a rectangular shape on a plane view. Although illustrated as an example, the present invention is not limited thereto, and the pixels PX, the first sub-pixel SPX1, the second sub-pixel SPX2, the third sub-pixel SPX3, and the fourth sub-pixel SPX4 are not limited thereto. Each may have at least one shape of a circle, an ellipse, a square, a parallelogram, a trapezoid, and a rhombus. In addition, each of the pixels PX, the first sub-pixel SPX1 , the second sub-pixel SPX2 , the third sub-pixel SPX3 , and the fourth sub-pixel SPX4 on a plane is, for example, at least one It may have the shape of a rectangle with rounded corners.

6A to 6D are schematic plan views of light emitting regions included in a display device according to an exemplary embodiment.

Referring to FIG. 5 , each of the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 may have a rectangular shape in plan view. However, the present invention is not limited thereto, and referring to FIGS. 6A to 6D , in a plan view, the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 . Each may have at least one shape of a circle, an ellipse, a square, a parallelogram, a trapezoid, and a rhombus. In addition, each of the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 may have a shape of, for example, a quadrangle with at least one rounded corner on a plane view.

Referring to FIG. 5 , the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 are sequentially spaced apart from each other in the first direction DR1 on a plan view. and can be placed. The shape of each of the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 on a plane is the length of the third direction DR3 in the first direction ( It may be a rectangle longer than the length of DR1).

However, the present invention is not limited thereto, and as shown in FIGS. 6A to 6D , in a plan view, the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area ( EA3 ) EA4) may be provided in various forms. Referring to FIG. 6A , a plurality of third light emitting areas EA3 may each have a circular shape on a plane view. The plurality of third emission areas EA3 may be provided to be spaced apart from each other in the first direction DR1 and the third direction DR3 . In a plan view, a first light emitting area EA1 , a second light emitting area EA2 , or a fourth light emitting area EA4 may be provided between the four third light emitting areas EA3 .

Referring to FIG. 6B , the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 are sequentially spaced apart from each other in the first direction DR1 on a plan view. and the shape of each of the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 in the plan view is in the first direction DR1 . The length may be a rectangle longer than the length in the third direction DR3 .

Referring to FIG. 6C , in a plan view, the first light-emitting area EA1 and the second light-emitting area EA2 are spaced apart from each other in the third direction DR3 , and the third light-emitting area EA3 and the fourth light-emitting area EA2 are spaced apart from each other. EA4 may be disposed to be spaced apart from each other in the first direction DR1 . The shape of each of the first light emitting area EA1 and the second light emitting area EA2 may be a rectangle in which a length in the first direction DR1 is longer than a length in the third direction DR3 , and the third light emission area EA3 has a shape. In addition, the shape of each of the fourth light emitting areas EA4 may be a rectangle in which a length in the third direction DR3 is longer than a length in the first direction DR1 .

Referring to FIG. 6D , in a plan view, the first light emitting area EA1 and the second light emitting area EA2 are spaced apart from each other in the first direction DR1 , and the third light emitting area EA3 and the fourth light emitting area EA2 are spaced apart from each other. EA4 may be disposed between the first light emitting area EA1 and the second light emitting area EA2 . The third light emitting area EA3 and the fourth light emitting area EA4 may be disposed to be spaced apart from each other in the third direction DR3 . The shape of each of the first light emitting area EA1 and the second light emitting area EA2 may be a rectangle in which a length in the third direction DR3 is longer than a length in the first direction DR1, and the third light emission area EA3 has a shape. And, the shape of each of the fourth light emitting areas EA4 may be a rectangle in which a length in the first direction DR1 is longer than a length in the third direction DR3 .

6A to 6D , the arrangement relationship and the first light emitting area EA1 of the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 in plan view ), the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 are respectively shown as an example, and the first light emitting area EA1 and the second light emitting area EA2 are illustrated. ), the third light emitting area EA3 , and the fourth light emitting area EA4 may be arranged in various ways other than the arrangement shown in FIGS. 6A to 6D , and the first light emitting area EA1 and the second light emitting area EA2 may be arranged in various ways. ), the third light emitting area EA3 , and the fourth light emitting area EA4 may each have various shapes other than the shapes shown in FIGS. 6A to 6D .

Referring again to FIGS. 1, 2, 3, 4A to 4C, and 5 , the first sub-pixel SPX1 includes a first sub thin film transistor, a first sub organic light emitting diode S_OEL1, and a first capacitor. includes The first sub organic light emitting device S_OEL1 is connected to the first sub thin film transistor. The first sub organic light emitting diode S_OEL1 emits light in a wavelength range of, for example, 440 nm to 458 nm. The first sub organic light emitting device S_OEL1 may emit, for example, deep blue light. The first sub organic light emitting diode S_OEL1 includes a first anode AN1 , a first common light emitting part CMLP1 , and a first sub light emitting which are sequentially stacked in a second direction DR2 intersecting the first direction DR1 . It includes a unit SMLP1 and a first cathode unit CATP1. The first sub organic light emitting diode S_OEL1 may further include a first hole transport region part HTRP1 , a first intermediate auxiliary part IMLP1 , and a first electron transport region part ETRP1 . The first capacitor is connected to the first sub thin film transistor.

The first sub-pixel SPX1 is divided into a first light emitting area EA1 and a first non-emission area NEA1 . The first light emitting area EA1 emits, for example, deep blue light. The first light emitting area EA1 may emit light in a wavelength range of, for example, 440 nm to 458 nm. On a plane view, the first light emitting area EA1 may have, for example, at least one of a circle, a square, a rectangle, and a rhombus. On a plane view, the first light emitting area EA1 may have, for example, a shape of a quadrangle with at least one rounded corner. The first non-emission area NEA1 does not emit light. In a plan view, the first non-emission area NEA1 may have a shape surrounding the first light-emitting area EA1 .

The second sub-pixel SPX2 includes a second sub thin film transistor, a second sub organic light emitting diode S_OEL2 , and a second capacitor. The second sub organic light emitting diode S_OEL2 is connected to the second sub thin film transistor. The second sub organic light emitting diode S_OEL2 emits light in a wavelength range of, for example, 459 nm to 490 nm. The second sub organic light emitting device S_OEL2 may emit, for example, sky blue light. The second sub organic light emitting device S_OEL2 includes a second anode AN2 , a second common light emitting part CMLP2 , a first auxiliary layer AL1 , a second sub light emitting part SMLP2 , and a second cathode part CATP2 . includes The second anode AN2 , the second common light emitting part CMLP2 , the first auxiliary layer AL1 , the second sub light emitting part SMLP2 , and the second cathode part CATP2 are sequentially arranged in the second direction DR2 . It may be laminated. However, the present invention is not limited thereto, and the second anode AN2 , the second common light emitting unit CMLP2 , the second sub light emitting unit SMLP2 , the first auxiliary layer AL1 , and the second cathode unit CATP2 may include the second They may be sequentially stacked in the direction DR2. The second sub organic light emitting diode S_OEL2 may further include a second hole transport region HTRP2 , a second intermediate auxiliary part IMLP2 , and a second electron transport region ETRP2 . The second capacitor is connected to the second sub thin film transistor.

The second sub-pixel SPX2 is divided into a second light emitting area EA2 and a second non-emission area NEA2 . The second light emitting area EA2 emits, for example, sky blue light. The second light emitting area EA2 may emit light in a wavelength range of, for example, 459 nm to 490 nm. On a plane view, the second light emitting area EA2 may have, for example, at least one of a circle, a square, a rectangle, and a rhombus. On a plane view, the second light emitting area EA2 may have, for example, a quadrangular shape with at least one rounded corner. The second non-emission area NEA2 does not emit light. In a plan view, the second non-emission area NEA2 may have a shape surrounding the second light-emitting area EA2 .

The third sub pixel SPX3 includes a third sub thin film transistor, a third sub organic light emitting device S_OEL3 and a third capacitor. The third sub organic light emitting diode S_OEL3 is connected to the third sub thin film transistor. The third sub organic light emitting element S_OEL3 emits light in a wavelength range of, for example, 495 nm to 570 nm. The third sub organic light emitting element S_OEL3 may emit green light, for example. The third sub organic light emitting element S_OEL3 includes a third anode AN3 , a third common light emitting part CMLP3 , and a third cathode part CATP3 that are sequentially stacked in the second direction DR2 . The third sub organic light emitting diode S_OEL3 may further include a third hole transport region HTRP3 and a third electron transport region ETRP3 . The third capacitor is connected to the third sub thin film transistor.

The third sub-pixel SPX3 is divided into a third light-emitting area EA3 and a third non-emission area NEA3 . The third light emitting area EA3 emits, for example, green light. The third light emitting area EA3 may emit light in a wavelength range of, for example, 495 nm to 570 nm. On a plane view, the third light emitting area EA3 may have, for example, at least one of a circle, a square, a rectangle, and a rhombus. On a plane view, the third light emitting area EA3 may have, for example, a shape of a quadrangle with at least one rounded corner. The third non-emission area NEA3 does not emit light. In a plan view, the third non-emission area NEA3 may have a shape surrounding the third light emission area EA3 .

The fourth sub-pixel SPX4 includes a fourth sub thin film transistor, a fourth sub organic light emitting device S_OEL4, and a fourth capacitor. The fourth sub organic light emitting diode S_OEL4 is connected to the fourth sub thin film transistor. The fourth sub organic light emitting diode S_OEL4 emits light in a wavelength range of, for example, 620 nm to 750 nm. The fourth sub organic light emitting diode S_OEL4 may emit red light. The fourth sub organic light emitting diode S_OEL4 includes the fourth anode AN4 , the fourth common light emitting part CMLP4 , the light emitting layer EML1 , and the fourth cathode CATP4 sequentially stacked in the second direction DR2 . include The fourth sub organic light emitting diode S_OEL4 may further include a fourth hole transport region HTRP4 , a second auxiliary layer AL2 , and a fourth electron transport region ETRP4 . The second auxiliary layer AL2 may be provided between the fourth common emission part CMLP4 and the emission layer EML1 or between the emission layer EML1 and the fourth cathode part CATP4 . The fourth capacitor is connected to the fourth sub thin film transistor.

The fourth sub-pixel SPX4 is divided into a fourth light-emitting area EA4 and a fourth non-emission area NEA4 . The fourth light emitting area EA4 emits, for example, red light. The fourth light emitting area EA4 may emit light in a wavelength range of, for example, 620 nm to 750 nm. On a plane view, the fourth light emitting area EA4 may have, for example, at least one of a circle, a square, a rectangle, and a rhombus. On a plane view, the fourth light emitting area EA4 may have, for example, a shape of a quadrangle with at least one rounded corner. The fourth non-emission area NEA4 does not emit light. In a plan view, the fourth non-emission area NEA4 may have a shape surrounding the fourth light-emitting area EA4 .

7A and 7B are schematic cross-sectional views corresponding to the line II-II' of FIG. 5 .

1, 2, 5, 7A and 7B , a display device according to an exemplary embodiment includes a plurality of anodes AN1, AN2, AN3, AN4, a pixel defining layer PDL, It includes a hole transport region HTR, a first common emission layer CML1 , a second common emission layer CML1 , an emission layer EML1 , an electron transport region ETR, and a cathode CAT.

A first anode AN1 , a second anode AN2 , a third anode AN3 , and a fourth anode AN4 are provided on the passivation layer PL. The first anode AN1 is provided in the first light emitting area EA1 . The second anode AN2 is provided in the second light emitting area EA2 . The third anode AN3 is provided in the third light emitting area EA3 . The fourth anode AN4 is provided in the fourth light emitting area EA4 .

A pixel defining layer PDL that partitions the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 is provided on the passivation layer PL. The pixel defining layer PDL exposes a portion of the top surface of each of the first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 . The pixel defining layer PDL is not limited thereto, but may include a metal-fluoride ion compound. For example, the pixel defining layer PDL may be formed of any one of LiF, BaF2, and CsF metal-fluoride ion compound. When the metal-fluoride ion compound has a predetermined thickness, it has insulating properties. The thickness of the pixel defining layer PDL may be, for example, 10 nm to 100 nm.

A hole transport region HTR is provided on the pixel defining layer PDL, the first anode AN1 , the second anode AN2 , the third anode AN3 , and the fourth anode AN4 . The hole transport region HTR is provided entirely on the base substrate (BS in FIG. 4C ). The hole transport region HTR includes a first emission region EA1 , a first non-emission region NEA1 , a second emission region EA2 , a second non-emission region NEA2 , a third emission region EA3 , and a third emission region EA3 . 3 are provided to be positioned in the non-emission area NEA3 , the fourth light-emitting area EA4 , and the fourth non-emission area NEA4 , and are integral with each other.

As mentioned above, the hole transport region HTR includes a first hole transport region part HTRP1, a second hole transport region part HTRP2, a third hole transport region part HTRP3, and a fourth hole transport region part ( HTRP4), a fifth hole transport region portion HTRP5, a sixth hole transport region portion HTRP6, and a seventh hole transport region portion HTRP7. The first hole transport region HTRP1 is positioned in the first light emitting region EA1 . The second hole transport region HTRP2 is positioned in the second light emitting region EA2 . The third hole transport region HTRP3 is positioned in the third light emitting region EA3 . The fourth hole transport region HTRP4 is positioned in the fourth light emitting region EA4 . The fifth hole transport area part HTRP5 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth hole transport area part HTRP6 is positioned in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh hole transport area part HTRP7 is positioned in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

The hole transport region HTR includes a hole injection layer HIL and a hole transport layer HTL. The hole injection layer HIL includes a first hole injection part HILP1 , a second hole injection part HILP2 , a third hole injection part HILP3 , a fourth hole injection part HILP4 , and a fifth hole injection part HILP5 . ), a sixth hole injection part HILP6, and a seventh hole injection part HILP7. The first hole injection part HILP1 is located in the first light emitting area EA1 . The second hole injection part HILP2 is located in the second emission area EA2 . The third hole injection part HILP3 is located in the third light emitting area EA3 . The fourth hole injection part HILP4 is located in the fourth light emitting area EA4 . The fifth hole injection part HILP5 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth hole injection part HILP6 is located in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh hole injection part HILP7 is located in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

The hole transport layer HTL includes a first hole transport part HTLP1, a second hole transport part HTLP2, a third hole transport part HTLP3, a fourth hole transport part HTLP4, a fifth hole transport part HTLP5, and a sixth hole transport part. (HTLP6) and a seventh hole transporter (HTLP7). The first hole transport part HTLP1 is located in the first light emitting area EA1 . The second hole transport part HTLP2 is located in the second light emitting area EA2 . The third hole transport part HTLP3 is located in the third light emitting area EA3 . The fourth hole transport part HTLP4 is located in the fourth light emitting area EA4 . The fifth hole transport part HTLP5 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth hole transport part HTLP6 is positioned in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh hole transport part HTLP7 is positioned in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

A first common emission layer CML1 is provided on the hole transport region HTR. The first common emission layer CML1 includes a first common emission part CMLP1 , a second common emission part CMLP2 , a third common emission part CMLP3 , a fourth common emission part CMLP4 , and a fifth common emission part CMLP2 . CMLP5), a sixth common light emitting part CMLP6, and a seventh common light emitting part CMLP7. The first common light emitting part CMLP1 is located in the first light emitting area EA1 . The second common light emitting part CMLP2 is located in the second light emitting area EA2 . The third common light emitting part CMLP3 is located in the third light emitting area EA3 . The fourth common light emitting part CMLP4 is located in the fourth light emitting area EA4 . The fifth common light emitting part CMLP5 is located in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth common light emitting part CMLP6 is located in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh common light emitting part CMLP7 is located in the third non-emission area NEA3 and the fourth non-emission area NEA4 . The first common emission layer CML1 may emit a third light. The third light may have a longer wavelength region than at least one of the first light and the second light. The third light may have a wavelength region of, for example, 495 nm to 570 nm.

A first auxiliary layer AL1 is provided on the first common emission layer CML1 . The first auxiliary layer AL1 may be provided between the first common emission layer CML1 and the second common emission layer CML2 or on the second common emission layer CML2 . The first auxiliary layer AL1 is disposed in the second emission area EA2 .

A second common emission layer CML2 is provided on the first common emission layer CML1 . The second common emission layer CML2 may emit a second light. The second light may have a wavelength range of, for example, 440 nm to 490 nm. The second common emission layer CML2 is provided to be positioned in the first light emitting area EA1 , the first non-emission area NEA1 , the second light emission area EA2 , and the second non-emission area NEA2 , and is integral with each other.

As mentioned above, the second common emission layer CML2 includes a first sub emission part SMLP1 , a second sub emission part SMLP2 , and a third sub emission part SMLP3 . The first sub light emitting part SMLP1 is located in the first light emitting area EA1 . The second sub light emitting part SMLP2 is located in the second light emitting area EA2 . The third sub-emission unit SMLP3 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 .

Referring to FIG. 7B , an intermediate auxiliary layer IML is provided between the first common emission layer CML1 and the second common emission layer CML2 . The intermediate auxiliary layer IML may prevent holes from being transported from the first common emission layer CML1 to the second common emission layer CML2 . Accordingly, the intermediate auxiliary layer IML may prevent the third light from being emitted from each of the first sub organic light emitting element S_OEL1 and the second sub organic light emitting element S_OEL2 .

As described above, the intermediate auxiliary layer IML includes a first intermediate auxiliary portion IMLP1 , a second intermediate auxiliary portion IMLP2 , and a third intermediate auxiliary portion IMLP3 . The first intermediate auxiliary part IMLP1 is located in the first light emitting area EA1 . The second intermediate auxiliary part IMLP2 is located in the second light emitting area EA2 . The third intermediate auxiliary part IMLP3 is located in the first non-emission area NEA1 and the second non-emission area NEA2 .

Again, referring to FIGS. 1, 2, 5, 7A, and 7B , the emission layer EML1 is provided on the first common emission layer CML1. The emission layer EML1 is disposed in the fourth emission area EA4 . The emission layer EML1 emits the first light. The first light may have a wavelength range of, for example, 620 nm to 750 nm.

An intermediate connection layer (not shown) between the second common emission layer CML2 and the electron transport region ETR, between the first common emission layer CML1 and the electron transport region ETR, and between the emission layer EML1 and the electron transport region ETR city) may be provided.

Referring to FIG. 7B , a second auxiliary layer AL2 is provided on the first common emission layer CML1 . The second auxiliary layer AL2 may be provided between the first common emission layer CML1 and the emission layer EML1 or on the emission layer EML1 . The second auxiliary layer AL2 is disposed in the fourth light emitting area EA4 .

Referring again to FIGS. 1, 2, 5, 7A and 7B , the electron transport region ETR is provided on the first common emission layer CML1 , the second common emission layer CML2 , and the emission layer EML1 . . The electron transport region ETR includes a first emission region EA1 , a first non-emission region NEA1 , a second emission region EA2 , a second non-emission region NEA2 , a third emission region EA3 , and a third emission region ETR. 3 are provided to be positioned in the non-emission area NEA3, the fourth light-emitting area EA4, and the fourth non-emission area NEA4, and are integral

As mentioned above, the electron transport region ETR includes the first electron transport region portion ETRP1, the second electron transport region portion ETRP2, the third electron transport region portion ETRP3, and the fourth electron transport region portion ( ETRP4), a fifth electron transport region portion ETRP5, a sixth electron transport region portion ETRP6, and a seventh electron transport region portion ETRP7. The first electron transport area part ETRP1 is located in the first light emitting area EA1 . The second electron transport area part ETRP2 is located in the second light emitting area EA2 . The third electron transport region ETRP3 is located in the third emission region EA3 . The fourth electron transport region ETRP4 is located in the fourth light emitting region EA4 . The fifth electron transport area part ETRP5 is located in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth electron transport area part ETRP6 is positioned in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh electron transport area part ETRP7 is located in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

The electron transport region ETR includes an electron transport layer ETL and an electron injection layer EIL. The electron transport layer (ETL) or the electron injection layer (EIL) may be omitted. The electron transport layer ETL includes a first electron transport part ETLP1 , a second electron transport part ETLP2 , a third electron transport part ETLP3 , a fourth electron transport part ETLP4 , a fifth electron transport part ETLP5 , and a sixth electron transport part (ETLP6) and a seventh electron transport unit (ETLP7). The first electron transport unit ETLP1 is located in the first emission area EA1 . The second electron transport unit ETLP2 is located in the second emission area EA2 . The third electron transport unit ETLP3 is located in the third light emitting area EA3 . The fourth electron transport unit ETLP4 is located in the fourth light emitting area EA4 . The fifth electron transport unit ETLP5 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth electron transport unit ETLP6 is positioned in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh electron transport unit ETLP7 is positioned in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

The electron injection layer EIL includes a first electron injection part EILP1 , a second electron injection part EILP2 , a third electron injection part EILP3 , a fourth electron injection part EILP4 , and a fifth electron injection part EILP5 . ), a sixth electron injection unit EILP6, and a seventh electron injection unit EILP7. The first electron injection part EILP1 is located in the first light emitting area EA1 . The second electron injection part EILP2 is located in the second light emitting area EA2 . The third electron injection unit EILP3 is located in the third light emitting area EA3 . The fourth electron injection unit EILP4 is located in the fourth emission area EA4 . The fifth electron injector EILP5 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth electron injector EILP6 is positioned in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh electron injection part EILP7 is located in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

A cathode CAT is provided on the electron transport region ETR. The cathode CAT includes a first light emitting area EA1 , a first non-emission area NEA1 , a second light-emitting area EA2 , a second non-emission area NEA2 , a third light-emitting area EA3 , and a third ratio. It is provided to be positioned in the light emitting area NEA3, the fourth light emitting area EA4, and the fourth non-emission area NEA4, and is integral with it.

As mentioned above, the cathode CAT includes a first cathode unit CATP1, a second cathode unit CATP2, a third cathode unit CATP3, a fourth cathode unit CATP4, and a fifth cathode unit CATP5. , a sixth cathode unit CATP6 and a seventh cathode unit CATP7. The first cathode part CATP1 is located in the first light emitting area EA1 . The second cathode part CATP2 is located in the second light emitting area EA2 . The third cathode part CATP3 is located in the third light emitting area EA3 . The fourth cathode part CATP4 is located in the fourth light emitting area EA4 . The fifth cathode unit CATP5 is positioned in the first non-emission area NEA1 and the second non-emission area NEA2 . The sixth cathode part CATP6 is positioned in the second non-emission area NEA2 and the third non-emission area NEA3 . The seventh cathode unit CATP7 is positioned in the third non-emission area NEA3 and the fourth non-emission area NEA4 .

Although not shown, an organic capping layer (not shown) may be provided on the cathode CAT. The organic capping layer (not shown) may include, for example, a first light-emitting area EA1 , a first non-emission area NEA1 , a second light-emitting area EA2 , a second non-emission area NEA2 , and a third light emission area. (EA3), the third non-emission area NEA3, the fourth light-emitting area EA4, and the fourth non-emission area NEA4 may be provided integrally.

The organic capping layer (not shown) transmits light emitted from the emission layer EML1, the first common emission layer CML1, and the second common emission layer CML2, from the top surface of the organic capping layer (not illustrated) to the emission layer EML1, the first The light may be reflected in the direction of the common light emitting layer CML1 and the second common light emitting layer CML2 . The reflected light may be amplified by a resonance effect inside the organic layer, thereby increasing the light efficiency of the display device 10 . The organic capping layer (not shown) may prevent loss of light from the cathode CAT through total reflection of light in the top emission type organic light emitting diode.

The organic capping layer (not shown) is not particularly limited as long as it is commonly used, for example, TPD15 (N4,N4,N4',N4'-tetra (biphenyl-4-yl) biphenyl-4,4'-diamine ), TCTA(4,4',4"- Tris (carbazol sol-9-yl) triphenylamine), N, N'-bis (naphthalen-1-yl), α-NPD(N, N'-bis (phenyl) ) -2,2'-dimethylbenzidine).

Although not shown, an encapsulation layer (not shown) may be provided on the cathode CAT. The encapsulation layer (not shown) includes a first light-emitting area EA1 , a first non-emission area NEA1 , a second light-emitting area EA2 , a second non-emission area NEA2 , a third light-emitting area EA3 , The third non-emission area NEA3 , the fourth light emitting area EA4 , and the fourth non-emission area NEA4 may be integrally provided.

An encapsulation layer (not shown) covers the cathode CAT. The encapsulation layer (not shown) may include at least one of an organic layer and an inorganic layer. The encapsulation layer (not shown) may be, for example, a thin film encapsulation layer. The encapsulation layer (not shown) protects the organic light emitting diode (OEL of FIG. 1 ).

In general, a conventional display device simultaneously including a sub organic light emitting device emitting sky blue light and a sub organic light emitting device emitting deep blue light includes a light emitting layer emitting sky blue light and a light emitting layer emitting deep blue light. Since it is formed in a separate process, the manufacturing process is complicated, and there is a problem in that the luminous efficiency is lowered due to foreign substances during manufacturing.

In the display device according to an embodiment of the present invention, the light emitting layer emitting sky blue light and the light emitting layer emitting deep blue light are formed as a single layer in a single process, thereby simplifying the manufacturing process, By reducing the exposure frequency, it is possible to prevent a decrease in luminous efficiency.

Hereinafter, a method of manufacturing a display device according to an exemplary embodiment of the present invention will be described. Hereinafter, differences between the organic light emitting diode according to an embodiment of the present invention and the display device according to an embodiment of the present invention will be described in detail below, and parts not described above are based on the above-described embodiment of the present invention. According to an organic light emitting diode according to an embodiment and a display device according to an embodiment of the present invention.

8 is a flowchart schematically illustrating a method of manufacturing a display device according to an exemplary embodiment.

9A to 9F are schematic cross-sectional views sequentially illustrating a method of manufacturing a display device according to an exemplary embodiment.

8 and 9A to 9F , in the method of manufacturing a display device according to an exemplary embodiment of the present invention, a first light emitting area EA1 , a second light emitting area EA2 , a third light emitting area EA3 and to be positioned in the first light emitting area EA1 , the second light emitting area EA2 , the third light emitting area EA3 , and the fourth light emitting area EA4 on the substrate SUB divided into the fourth light emitting area EA4 . A step of providing the first common emission layer CML1 ( S100 ), using the first mask MSK1 to be disposed in the second emission area EA2 , a first auxiliary layer ( S100 ) on the first common emission layer CML1 Providing AL1 ( S200 ), using the second mask MSK2 , the first common emission layer CML1 and the first auxiliary layer are positioned in the first and second emission regions EA1 and EA2 . Using the step S300 of providing the second common light emitting layer CML2 on the layer AL1 or between the first common light emitting layer CML1 and the first auxiliary layer AL1 ( S300 ) and the third mask MSK3 , The method may include providing the emission layer EML1 on the first common emission layer CML1 to be disposed in the fourth emission area EA4 ( S400 ).

8 and 9A , a substrate SUB divided into a first light emitting area EA1 , a second light emitting area EA2 , a third light emitting area EA3 , and a fourth light emitting area EA4 is prepared . A first non-emission area NEA1 and a second non-emission area NEA2 are provided between the first light emitting area EA1 and the second light emitting area EA2 . A second non-emission area NEA2 and a third non-emission area NEA3 are provided between the second light emitting area EA2 and the third light emitting area EA3 . A third non-emission area NEA3 and a fourth non-emission area NEA4 are provided between the third light emitting area EA3 and the fourth light emitting area EA4 .

4C and 8 , the substrate SUB is, for example, a base substrate BS, a first semiconductor layer SM1 , a second semiconductor layer SM2 , a gate insulating layer GI, and a first gate. Electrode GE1, second gate electrode GE2, interlayer insulating layer IL, first source electrode SE1, first drain electrode DE1, second source electrode SE2, second drain electrode DE2 ), a passivation layer PL, an anode AN, and a pixel defining layer (PDL of FIG. 7A ).

Referring to FIGS. 8 and 9B , the first common emission layer CML1 is provided on the substrate SUB ( S100 ). The first common emission layer CML1 is provided entirely on the substrate SUB. The first common emission layer CML1 may be provided on the substrate SUB without a separate mask. The first common emission layer CML1 includes a first emission region EA1 , a second emission region EA2 , a third emission region EA3 , a fourth emission region EA4 , a first non-emitting region NEA1 , and a second emission region EA2 . The second non-emission area NEA2, the third non-emission area NEA3, and the fourth non-emission area NEA4 are positioned and integrated. The first common emission layer CML1 may emit at least one of light in a wavelength region of 440 nm to 490 nm, light in a wavelength region of 495 nm to 570 nm, and light in a wavelength region of 620 nm to 750 nm.

Referring to FIGS. 8 and 9C , the first auxiliary layer AL1 is provided on the first common emission layer CML1 using the first mask MSK1 ( S200 ). Although not shown, the first auxiliary layer AL1 may be provided on the second common emission layer (CML2 of FIG. 9D ). The first mask MSK1 includes a hole corresponding to the second emission area EA2 . The first mask MSK1 may be, for example, a fine metal mask. The first auxiliary layer AL1 is located in the second emission area EA2 , and is not located in the first emission area EA1 , the third emission area EA3 , and the fourth emission area EA4 .

Referring to FIGS. 8 and 9D , the second common emission layer CML2 is provided on the first common emission layer CML1 and the first auxiliary layer AL1 using the second mask MSK2 ( S300 ). The second mask MSK2 includes holes corresponding to the first emission area EA1 and the second emission area EA2 . The second mask MSK2 may be, for example, a fine metal mask. The second common emission layer CML2 is positioned in the first light emitting area EA1 , the second light emitting area EA2 , the first non-emission area NEA1 , and the second non-emission area NEA2 and is integral with each other. The second common emission layer CML2 is not positioned in the third emission area EA3 and the fourth emission area EA4 . The second common emission layer CML2 emits light in a wavelength region different from that of the first common emission layer CML1, for example, light in a wavelength region of 440 nm to 490 nm, light in a wavelength region of 495 nm to 570 nm, and light in a wavelength region of 620 nm to 750 nm. It may be to emit at least one light among the light of the wavelength region.

In the method of manufacturing a display device according to an exemplary embodiment of the present invention, an intermediate auxiliary layer (IML of FIG. 7B ) is provided between the first common emission layer CML1 and the second common emission layer CML2 using the second mask MSK2 . It may further include the step of providing. The intermediate auxiliary layer (IML of FIG. 7B ) is positioned in the first light-emitting area EA1 , the second light-emitting area EA2 , the first non-emission area NEA1 , and the second non-emission area NEA2 and is integral with each other. The intermediate auxiliary layer (IML of FIG. 7B ) is not located in the third light emitting area EA3 and the fourth light emitting area EA4 .

8 and 9E , in the method of manufacturing the display device according to the exemplary embodiment of the present invention, the second auxiliary layer is disposed between the first common emission layer CML1 and the emission layer EML1 using the fourth mask MSK4 . The method may further include providing a layer AL2. Although not shown, the second auxiliary layer AL2 may be provided on the emission layer EML1 . The fourth mask MSK4 includes a hole corresponding to the fourth emission area EA4 . The second auxiliary layer AL2 is located in the fourth emission area EA4 and is not located in the first emission area EA1 , the second emission area EA2 , and the third emission area EA3 .

Referring to FIGS. 8 and 9F , the emission layer EML1 is provided on the first common emission layer CML1 using the third mask MSK3 ( S400 ). The third mask MSK3 includes a hole corresponding to the fourth emission area EA4 . The third mask MSK3 may be, for example, a fine metal mask. The third mask MSK3 may be, for example, the same as that of the fourth mask MSK4 . The emission layer EML1 is located in the fourth emission area EA4 , and is not located in the first emission area EA1 , the second emission area EA2 , and the third emission area EA3 . The emission layer EML1 emits light in a wavelength region different from that of the first common emission layer CML1 and the second common emission layer CML2, respectively, and includes light in a wavelength region of 440 nm to 490 nm, light in a wavelength region of 495 nm to 570 nm, and 620 nm. It may be to emit at least one light among the light in the wavelength range of to 750 nm.

In general, in a conventional method of manufacturing a display device including a sub organic light emitting element emitting sky blue light and a sub organic light emitting element emitting deep blue light at the same time, a light emitting layer emitting sky blue light and deep blue light emitting Since the light emitting layer is formed in a separate process, the manufacturing process is complicated, and there is a problem in that the luminous efficiency of the manufactured display device is deteriorated due to foreign substances during manufacturing.

In the method of manufacturing a display device according to an embodiment of the present invention, the light emitting layer emitting the sky blue light and the light emitting layer emitting the deep blue light are formed as a single layer in a single process, thereby simplifying the manufacturing process. By reducing the frequency of exposure to foreign substances, it is possible to prevent a decrease in luminous efficiency of the manufactured display device.

As mentioned above, although embodiments of the present invention have been described with reference to the accompanying drawings, those of ordinary skill in the art to which the present invention pertains can practice the present invention in other specific forms without changing its technical spirit or essential features. You will understand that there is Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

OEL: organic light emitting element AN: anode
HTR: hole transport region EML1: light emitting layer
CML1: first common light emitting layer CML2: second common light emitting layer
AL1: first auxiliary layer AL2: second auxiliary layer
ETR: electron transport region CAT: cathode
10: display device

Claims (21)

a first sub organic light emitting diode including a first anode, a first common light emitting unit, and a first sub light emitting unit;
a second sub organic light emitting diode including a second anode, a second common light emitting unit, a first auxiliary layer, and a second sub light emitting unit;
a third sub organic light emitting device including a third anode and a third common light emitting part; and
A fourth sub-organic light emitting device including a fourth anode, a fourth common light emitting part, and a light emitting layer emitting the first light;
The first sub light emitting unit and the second sub light emitting unit are integral and emit a second light;
the first common light emitting unit, the second common light emitting unit, the third common light emitting unit, and the fourth common light emitting unit are integrally formed and have a longer wavelength region than at least one of the first light and the second light. 3 An organic light emitting device that emits light. According to claim 1,
The first light has a wavelength range of 620 nm to 750 nm,
The second light has a wavelength range of 440 nm to 490 nm,
The third light is an organic light emitting device having a wavelength range of 495 nm to 570 nm. According to claim 1,
The first sub organic light emitting device emits light in a wavelength range of 440 nm to 458 nm,
The second sub organic light emitting device emits light in a wavelength range of 459 nm to 490 nm,
The third sub organic light emitting device emits light in a wavelength range of 495 nm to 570 nm,
The fourth sub organic light emitting device is an organic light emitting device that emits light in a wavelength range of 620 nm to 750 nm. According to claim 1,
The first auxiliary layer is
The organic light emitting diode is provided between the second common light emitting unit and the second sub light emitting unit or on the second sub light emitting unit. The method of claim 1,
The fourth sub organic light emitting device further includes a second auxiliary layer,
and the second auxiliary layer is provided between the fourth common light emitting part and the light emitting layer or on the light emitting layer. According to claim 1,
The first sub organic light emitting device further includes a first intermediate auxiliary part provided between the first common light emitting part and the first sub light emitting part,
The second sub organic light emitting device further includes a second intermediate auxiliary portion provided between the second common light emitting portion and the first auxiliary layer,
The organic light emitting device of which the first intermediate auxiliary portion and the second intermediate auxiliary portion are integral. According to claim 1,
and the first sub organic light emitting device, the second sub organic light emitting device, and the third sub organic light emitting device are provided to be spaced apart from each other. a base substrate divided into a first light emitting area, a second light emitting area, a third light emitting area, and a fourth light emitting area spaced apart from each other;
a first common light emitting layer disposed in the first light emitting area, the second light emitting area, the third light emitting area, and the fourth light emitting area and integrally formed;
a second common light emitting layer disposed in the first light emitting area and the second light emitting area, the second common light emitting layer being provided on the first common light emitting layer;
a first auxiliary layer disposed in the second light emitting area and provided between the first common light emitting layer and the second common light emitting layer or on the second common light emitting layer; and
a light emitting layer disposed in the fourth light emitting region, provided on the first common light emitting layer, and emitting the first light;
The second common light emitting layer emits a second light,
and the first common emission layer emits a third light having a longer wavelength region than at least one of the first light and the second light. 9. The method of claim 8,
and the first common emission layer is provided entirely on the base substrate. 9. The method of claim 8,
The first light has a wavelength range of 620 nm to 750 nm,
The second light has a wavelength range of 440 nm to 490 nm,
The third light has a wavelength range of 495 nm to 570 nm. 9. The method of claim 8,
The first light emitting region emits light in a wavelength region of 440 nm to 458 nm,
The second light emitting region emits light in a wavelength region of 459 nm to 490 nm,
The third light emitting region emits light in a wavelength region of 495 nm to 570 nm,
The fourth light emitting region emits light in a wavelength region of 620 nm to 750 nm. 9. The method of claim 8,
The display device of claim 1 , further comprising: a second auxiliary layer disposed in the fourth light emitting area and provided between the first common light emitting layer and the light emitting layer or on the light emitting layer. 9. The method of claim 8,
The display device of claim 1 , further comprising: an integral auxiliary layer positioned in the first light emitting area and the second light emitting area, provided between the first common light emitting layer and the second common light emitting layer or on the second common light emitting layer . 9. The method of claim 8,
The display further comprising a hole transport region positioned in the first light emitting area, the second light emitting area, the third light emitting area, and the fourth light emitting area, provided between the base substrate and the first common light emitting layer, and integrally formed Device. 15. The method of claim 14,
The hole transport region is
a hole injection layer provided on the base substrate; and
Including; a hole transport layer provided on the hole injection layer;
At least a portion of the hole transport layer includes a P-type dopant. 9. The method of claim 8,
An electron transport region located in the first light emitting region, the second light emitting region, the third light emitting region and the fourth light emitting region, provided on the first common light emitting layer, the second common light emitting layer, and the light emitting layer, and integrally A display device that further comprises a. 17. The method of claim 16,
The electron transport region is
an electron transport layer provided on the first common emission layer, the second common emission layer, and the emission layer; and
and an electron injection layer provided on the electron transport layer. 9. The method of claim 8,
A first mode in which light is emitted from each of the first light emitting area, the second light emitting area, the third light emitting area and the fourth light emitting area, the first light emitting area, the third light emitting area and the fourth light emitting area In a second mode in which light is emitted from each and no light is emitted from the second light-emitting area, or light is emitted from each of the second light-emitting area, the third light-emitting area, and the fourth light-emitting area, and the first light-emitting area A display device driven in a third mode in which light is not emitted from an area. The first light-emitting area, the second light-emitting area, the third light-emitting area and the fourth light-emitting area are located on a substrate divided into a first light-emitting area, a second light-emitting area, a third light-emitting area, and a fourth light-emitting area providing a first common light emitting layer so as to
providing a first auxiliary layer on the first common emission layer so as to be disposed in the second emission region using a first mask;
Using a second mask after the step of providing the first auxiliary layer, a portion of the first common emission layer overlapping the first emission region and the portion being positioned in the first emission region and the second emission region; providing a second common light emitting layer on a portion where the first auxiliary layer overlaps the second light emitting region, or providing the second mask between the step of providing the first common light emitting layer and the step of providing the first auxiliary layer providing the second common light emitting layer on the first common light emitting layer using; and
using a third mask to provide a light emitting layer on the first common light emitting layer so as to be disposed in the fourth light emitting area;
When providing the second common light emitting layer between the step of providing the first common light emitting layer and the step of providing the first auxiliary layer, the step of providing the first auxiliary layer may include the second common light emitting layer on the second common light emitting layer. 1 A method of manufacturing a display device comprising the step of providing an auxiliary layer. 20. The method of claim 19,
using a fourth mask to provide a second auxiliary layer on a portion in which the first common light emitting layer overlaps the fourth light emitting region between the step of providing the first common light emitting layer and the step of providing the light emitting layer; or providing a second auxiliary layer on a portion where the light emitting layer overlaps the fourth light emitting region using the fourth mask after providing the light emitting layer. 20. The method of claim 19,
Each of the first mask, the second mask, and the third mask is a fine metal mask.

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