KR102374073B1 - 웨이퍼 프로세싱 증착 차폐 부품 - Google Patents

웨이퍼 프로세싱 증착 차폐 부품 Download PDF

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Publication number
KR102374073B1
KR102374073B1 KR1020217013278A KR20217013278A KR102374073B1 KR 102374073 B1 KR102374073 B1 KR 102374073B1 KR 1020217013278 A KR1020217013278 A KR 1020217013278A KR 20217013278 A KR20217013278 A KR 20217013278A KR 102374073 B1 KR102374073 B1 KR 102374073B1
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KR
South Korea
Prior art keywords
collimator
openings
collimator assembly
region
aspect ratio
Prior art date
Application number
KR1020217013278A
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English (en)
Korean (ko)
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KR20210052600A (ko
Inventor
마틴 엘. 리커
마우리스 이. 에워트
아난타 케이. 서브라마니
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US12/482,846 external-priority patent/US20090308739A1/en
Priority claimed from US12/482,713 external-priority patent/US20090308732A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20210052600A publication Critical patent/KR20210052600A/ko
Application granted granted Critical
Publication of KR102374073B1 publication Critical patent/KR102374073B1/ko

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    • H01L21/203—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)
KR1020217013278A 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품 KR102374073B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US17262709P 2009-04-24 2009-04-24
US61/172,627 2009-04-24
US12/482,846 US20090308739A1 (en) 2008-06-17 2009-06-11 Wafer processing deposition shielding components
US12/482,713 US20090308732A1 (en) 2008-06-17 2009-06-11 Apparatus and method for uniform deposition
US12/482,713 2009-06-11
US12/482,846 2009-06-11
KR1020207034181A KR102262978B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
PCT/US2010/030116 WO2010123680A2 (en) 2009-04-24 2010-04-06 Wafer processing deposition shielding components

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207034181A Division KR102262978B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품

Publications (2)

Publication Number Publication Date
KR20210052600A KR20210052600A (ko) 2021-05-10
KR102374073B1 true KR102374073B1 (ko) 2022-03-11

Family

ID=43011685

Family Applications (6)

Application Number Title Priority Date Filing Date
KR1020217013278A KR102374073B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020197025908A KR102186535B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020117028097A KR101782355B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020187035627A KR102020010B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020177017742A KR101929971B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020207034181A KR102262978B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020197025908A KR102186535B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020117028097A KR101782355B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020187035627A KR102020010B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020177017742A KR101929971B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품
KR1020207034181A KR102262978B1 (ko) 2009-04-24 2010-04-06 웨이퍼 프로세싱 증착 차폐 부품

Country Status (4)

Country Link
KR (6) KR102374073B1 (zh)
CN (2) CN107039230A (zh)
TW (7) TWI605144B (zh)
WO (1) WO2010123680A2 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8702918B2 (en) * 2011-12-15 2014-04-22 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
KR20160002543A (ko) * 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
US9543126B2 (en) * 2014-11-26 2017-01-10 Applied Materials, Inc. Collimator for use in substrate processing chambers
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
WO2017074633A1 (en) 2015-10-27 2017-05-04 Applied Materials, Inc. Biasable flux optimizer/collimator for pvd sputter chamber
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
US11424112B2 (en) * 2017-11-03 2022-08-23 Varian Semiconductor Equipment Associates, Inc. Transparent halo assembly for reduced particle generation
US20230335941A1 (en) 2021-06-11 2023-10-19 Schott Japan Corporation Hermetic terminal and manufacturing method of same
US20220406583A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
KR102594388B1 (ko) * 2021-08-24 2023-10-27 전주대학교 산학협력단 Mec 환경에서 긴급 데이터 전송을 위한 sdn 기반 패킷 스케줄링 방법
CN115449762A (zh) * 2022-08-22 2022-12-09 无锡尚积半导体科技有限公司 一种用于磁控溅射设备的准直器及磁控溅射设备

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法

Family Cites Families (8)

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US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
JPH093639A (ja) * 1995-06-23 1997-01-07 Applied Materials Inc Ｐｖｄ装置
JPH11200029A (ja) * 1998-01-13 1999-07-27 Victor Co Of Japan Ltd スパッタリング装置
US20030015421A1 (en) * 2001-07-20 2003-01-23 Applied Materials, Inc. Collimated sputtering of cobalt
US6780294B1 (en) * 2002-08-19 2004-08-24 Set, Tosoh Shield assembly for substrate processing chamber
JP2004083984A (ja) * 2002-08-26 2004-03-18 Fujitsu Ltd スパッタリング装置
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
KR101929971B1 (ko) 2018-12-18
TW202136549A (zh) 2021-10-01
TW201100571A (en) 2011-01-01
KR101782355B1 (ko) 2017-09-27
KR20190105132A (ko) 2019-09-11
KR20180133566A (ko) 2018-12-14
KR102262978B1 (ko) 2021-06-08
TWI527921B (zh) 2016-04-01
KR20140014378A (ko) 2014-02-06
TW202000961A (zh) 2020-01-01
TWI741750B (zh) 2021-10-01
WO2010123680A3 (en) 2011-01-13
TWI605144B (zh) 2017-11-11
KR20170076824A (ko) 2017-07-04
CN102301451A (zh) 2011-12-28
KR102186535B1 (ko) 2020-12-03
TWI715279B (zh) 2021-01-01
TW201920726A (zh) 2019-06-01
TW201814075A (zh) 2018-04-16
TWI654329B (zh) 2019-03-21
CN107039230A (zh) 2017-08-11
KR20200136061A (ko) 2020-12-04
KR102020010B1 (ko) 2019-09-09
TWI789790B (zh) 2023-01-11
TW201634719A (zh) 2016-10-01
TWI695078B (zh) 2020-06-01
WO2010123680A2 (en) 2010-10-28
TW202307237A (zh) 2023-02-16
KR20210052600A (ko) 2021-05-10
TW202102703A (zh) 2021-01-16

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