KR102345172B1 - 기판 탈가스용 챔버 - Google Patents

기판 탈가스용 챔버 Download PDF

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Publication number
KR102345172B1
KR102345172B1 KR1020187029133A KR20187029133A KR102345172B1 KR 102345172 B1 KR102345172 B1 KR 102345172B1 KR 1020187029133 A KR1020187029133 A KR 1020187029133A KR 20187029133 A KR20187029133 A KR 20187029133A KR 102345172 B1 KR102345172 B1 KR 102345172B1
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KR
South Korea
Prior art keywords
slit
workpiece
pockets
chamber
pocket
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KR1020187029133A
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English (en)
Korean (ko)
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KR20180123522A (ko
Inventor
로기어 로데르
마르틴 쉐페르
위르겐 바이카르트
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에바텍 아크티엔게젤샤프트
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Publication of KR20180123522A publication Critical patent/KR20180123522A/ko
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    • H01L21/67109—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00—Cooling of furnaces or of charges therein
    • H01L21/67178—
    • H01L21/67303—
    • H01L21/67309—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/127—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by the substrate support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00—Cooling of furnaces or of charges therein
    • F27D2009/007—Cooling of charges therein

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Tunnel Furnaces (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Vacuum Packaging (AREA)
KR1020187029133A 2016-03-08 2016-03-08 기판 탈가스용 챔버 Active KR102345172B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/054909 WO2017152958A1 (en) 2016-03-08 2016-03-08 Chamber for degassing substrates

Publications (2)

Publication Number Publication Date
KR20180123522A KR20180123522A (ko) 2018-11-16
KR102345172B1 true KR102345172B1 (ko) 2021-12-31

Family

ID=55527913

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187029133A Active KR102345172B1 (ko) 2016-03-08 2016-03-08 기판 탈가스용 챔버

Country Status (6)

Country Link
US (2) US11776825B2 (https=)
EP (1) EP3427291B1 (https=)
JP (1) JP6800237B2 (https=)
KR (1) KR102345172B1 (https=)
CN (1) CN108780766B (https=)
WO (1) WO2017152958A1 (https=)

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US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11901198B2 (en) * 2019-07-12 2024-02-13 Axcelis Technologies, Inc. Toxic outgas control post process
KR102707382B1 (ko) * 2020-06-10 2024-09-13 삼성전자주식회사 매거진 지지 장치 및 이를 포함하는 반도체 제조 장비
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11747660B2 (en) * 2020-07-28 2023-09-05 HKC Corporation Limited Degassing machine and degassing system
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool
CN119465018B (zh) * 2025-01-13 2025-04-18 上海陛通半导体能源科技股份有限公司 一种用于pvd设备的脱气腔
CN119465019B (zh) * 2025-01-13 2025-04-18 上海陛通半导体能源科技股份有限公司 一种半导体元器件高温脱气之后快速冷却装置

Citations (2)

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JP2000504876A (ja) 1996-02-16 2000-04-18 イートン コーポレーション 加工物にイオン注入するためのイオン注入装置
US7381052B2 (en) 2002-01-24 2008-06-03 Applied Materials, Inc. Apparatus and method for heating substrates

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FR2747112B1 (fr) 1996-04-03 1998-05-07 Commissariat Energie Atomique Dispositif de transport d'objets plats et procede de transfert de ces objets entre ledit dispositif et une machine de traitement
US6602348B1 (en) * 1996-09-17 2003-08-05 Applied Materials, Inc. Substrate cooldown chamber
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US7381052B2 (en) 2002-01-24 2008-06-03 Applied Materials, Inc. Apparatus and method for heating substrates

Also Published As

Publication number Publication date
CN108780766B (zh) 2022-03-04
JP2019515484A (ja) 2019-06-06
US11776825B2 (en) 2023-10-03
KR20180123522A (ko) 2018-11-16
US20190096715A1 (en) 2019-03-28
JP6800237B2 (ja) 2020-12-16
US20230395402A1 (en) 2023-12-07
EP3427291B1 (en) 2022-04-13
CN108780766A (zh) 2018-11-09
WO2017152958A1 (en) 2017-09-14
EP3427291A1 (en) 2019-01-16

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