KR102343347B1 - Electronic device and method of manufacturing electronic device - Google Patents

Abstract

According to an embodiment of the present invention, a gate electrode formed to have a height in a first direction, a source electrode spaced apart from the gate electrode in a direction crossing the first direction and formed to face one surface of the gate electrode, and the first It includes a drain electrode spaced apart from the gate electrode in a direction crossing the direction and formed to face one surface of the gate electrode, a region overlapping the gate electrode, and electrically connected to the source electrode and the drain electrode, and the gate electrode Disclosed is an electronic device including an active layer formed to have side portions formed to face at least one side surface of a source electrode and a drain electrode.

Description

Electronic device and method of manufacturing electronic device

The present invention relates to an electronic device and a method for manufacturing an electronic device.

As technology advances and people's interest in the convenience of life increases, attempts are being made to develop various electronic products, and these electronic products are becoming smaller and more integrated, and the places where they are used are increasing widely. .

These electronic products include a variety of electronic devices, for example, CPU, memory, and may include a variety of other devices, specific examples, such as computers and smartphones as well as home sensor devices for IoT, bio-electronic devices for ergonomics, etc. Electronic devices are used in products in the field.

On the other hand, the use and application fields of these electronic devices are rapidly increasing according to the recent speed of technological development and the rapid improvement of the living standards of users, and the demand for them is also increasing accordingly.

On the other hand, there is a need to reduce the size of the electronic device and to improve the electrical characteristics and driving speed.

The present invention may provide an electronic device and a method for controlling an electronic device having improved electrical characteristics and realizing miniaturization.

According to an embodiment of the present invention, a gate electrode formed to have a height in a first direction, a source electrode spaced apart from the gate electrode in a direction crossing the first direction and formed to face one surface of the gate electrode, and the first It includes a drain electrode spaced apart from the gate electrode in a direction crossing the direction and formed to face one surface of the gate electrode, a region overlapping the gate electrode, and electrically connected to the source electrode and the drain electrode, and the gate electrode Disclosed is an electronic device including an active layer formed to have side portions formed to face at least one side surface of a source electrode and a drain electrode.

In this embodiment, the active layer may include a bottom portion formed in a direction crossing the side portion.

The present embodiment may further include a substrate having a groove, wherein the gate electrode, the source electrode, the drain electrode, and the active layer are disposed to correspond to the groove.

In this embodiment, a plurality of the grooves may be provided.

In this embodiment, the active layer may be formed to contain a two-dimensional material.

Another embodiment of the present invention is a method of manufacturing an electronic device including a gate electrode, a source electrode, a drain electrode and an active layer, wherein the gate electrode is formed to have a height in a first direction, and the source electrode crosses the first direction The gate electrode is spaced apart from the gate electrode based on a direction of and the active layer includes a region overlapping the gate electrode, is electrically connected to the source electrode and the drain electrode, and has side portions formed to face at least one side of the gate electrode, the source electrode, and the drain electrode Disclosed is a method of manufacturing an electronic device comprising:

In this embodiment, the forming of the active layer may further include forming a bottom portion in a direction crossing the side portion.

In this embodiment, the method may further include preparing a substrate and forming a groove on the substrate, and forming the gate electrode, the source electrode, the drain electrode, and the active layer to correspond to the groove.

In the present embodiment, forming the grooves may include forming a plurality of grooves on the substrate to be spaced apart from each other.

In this embodiment, the step of forming the active layer may include forming to contain a two-dimensional material.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

The electronic device according to the present invention has improved electrical characteristics and can be easily miniaturized, and the electronic device manufacturing method according to the present invention can easily implement an electronic device with improved electrical characteristics and increased integration through miniaturization.

1 is a schematic plan view illustrating an electronic device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 .
FIG. 3 is a cross-sectional view taken along line III-III of FIG. 1 .
4 is a schematic plan view illustrating an electronic device according to another embodiment of the present invention.
5 is a cross-sectional view taken along the line V-V of FIG. 4 .
6 is a cross-sectional view taken along the line VI-VI of FIG.
7 is a cross-sectional view taken along line VII-VII of FIG.
8 is a schematic plan view showing an electronic device according to another embodiment of the present invention.
9 is a cross-sectional view taken along line IX-IX of FIG.
FIG. 10 is a cross-sectional view taken along line X-X of FIG. 8 .
11 is a cross-sectional view taken along line XI-XI of FIG. 8 .
12 to 17 are cross-sectional views for explaining a method of manufacturing an electronic device according to an embodiment of the present invention.
18 is a schematic plan view illustrating an electronic device according to another embodiment of the present invention.
19 is a cross-sectional view taken along line XVIII-XVIII of FIG. 18 .

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to the embodiments of the present invention shown in the accompanying drawings.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding components are given the same reference numerals, and the overlapping description thereof will be omitted. .

In the following embodiments, terms such as first, second, etc. are used for the purpose of distinguishing one component from another, not in a limiting sense.

In the following examples, the singular expression includes the plural expression unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have means that the features or components described in the specification are present, and the possibility that one or more other features or components will be added is not excluded in advance.

In the drawings, the size of the components may be exaggerated or reduced for convenience of description. For example, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

In cases where certain embodiments may be implemented otherwise, a specific process sequence may be performed different from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the order described.

1 is a schematic plan view showing an electronic device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1, and FIG. 3 is a line III-III of FIG. It is a cut-out section.

1 to 3 , the electronic device 100 according to the present embodiment may include a gate electrode 120 , a source electrode 161 , a drain electrode 162 , and an active layer 110 .

As an optional embodiment, the electronic device 100 may include a substrate 101 .

The substrate 101 may include one or more grooves 101H.

The gate electrode 120 , the source electrode 161 , the drain electrode 162 , and the active layer 110 may be formed on the substrate 101 , and may be formed, for example, in the groove 101H of the substrate 101 . have.

The groove 101H may have a shape similar to that removed by a predetermined depth of the substrate 101 , and the groove 101H may be formed using various methods.

For example, various types of etching methods for the substrate 101 may be performed to form the groove 101H.

The substrate 101 may be formed in various shapes, for example, the substrate 101 may have a plate shape.

The substrate 101 may be formed of various materials, and may contain, for example, an insulating material. For example, the substrate 101 may contain a silicon-based inorganic material, and, as a specific example, may contain silicon oxide.

Also, as another example, the substrate 101 may contain a glass material or a plastic material. The substrate 101 may be formed to be rigid or flexible as needed.

As an alternative embodiment, the substrate 101 may include a ceramic substrate such as alumina or a flexible polymer.

The gate electrode 120 , the source electrode 161 , the drain electrode 162 , and the active layer 110 will be described. As described above, the gate electrode 120 , the source electrode 161 , the drain electrode 162 , and the active layer 110 may be formed in the groove 101H of the substrate 101 .

The active layer 110 may be disposed in the groove 101H.

The active layer 110 may be formed on at least one surface of the groove 101H of the substrate 101 , and may include, for example, the first side portion 111 formed in one region of the side surface of the groove 101H. The first side portion 111 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 101H of the substrate 101 . As an optional embodiment, the first side portion 111 may have a length equal to the length of the groove 101H in one direction.

As an optional embodiment, the first side part 111 may face the source electrode 161 , the gate electrode 120 , and the drain electrode 162 , for example, the source electrode 161 , the gate electrode 120 and the drain. It may be formed to face one side of the electrode 162 .

Also, as an example, the active layer 110 may include a second side surface portion 112 formed to face the first side surface portion 111 in one region of a side surface of the groove 101H. The second side portion 112 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 101H of the substrate 101 . As an optional embodiment, the second side part 112 may have a length equal to the length of the groove 101H in one direction.

As an optional embodiment, the first side portion 111 and the second side portion 112 may be spaced apart from each other, may face each other, for example, may be arranged side by side.

As an optional embodiment, the second side part 112 may face the source electrode 161 , the gate electrode 120 , and the drain electrode 162 , for example, the source electrode 161 , the gate electrode 120 , and the drain. It may be formed to face one side of the electrode 162 .

Through this, the source electrode 161 , the gate electrode 120 , and the drain electrode 162 may be disposed between the first side part 111 and the second side part 112 .

In addition, as an example, the active layer 110 is the bottom surface of the groove 101H, for example, the surface furthest from the open upper region of the groove 101H (groove 101H based on FIGS. 2 and 3 ). The bottom part 113 may be included in the bottom part 113 .

As an optional embodiment, the bottom part 113 may be formed to connect the first side part 111 and the second side part 112 .

In addition, the bottom portion 113 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 101H of the substrate 101 . As an optional embodiment, the bottom portion 113 may have a length equal to the length of the groove 101H in one direction.

As an optional embodiment, the bottom part 113 may face the source electrode 161 , the gate electrode 120 , and the drain electrode 162 , for example, the source electrode 161 , the gate electrode 120 , and the drain electrode. It may be formed to face the bottom surface of (162).

Through this, the source electrode 161 , the gate electrode 120 , and the drain electrode 162 may be disposed on the bottom portion 113 .

In addition, as an optional embodiment, the active layer 110 may further include one or more side parts (not shown) formed to have a length in a direction crossing the first side part 111 and the second side part 112 facing each other, This side part (not shown) may be formed to be connected to, for example, the first side part 111 and the second side part 112 .

The active layer 110 may be formed to contain various materials.

The active layer 110 may contain various semiconductor materials.

In an alternative embodiment, the active layer 110 may contain a 2D material. The two-dimensional material contained in the active layer 110 may include a semiconductor material having a two-dimensional crystal structure, and may have a monolayer or multilayer structure.

In addition, each layer of the two-dimensional material contained in the active layer 110 may have an atomic level thickness, and the respective layers may be connected to each other by a Van Der Waals bond. can

In addition, the number of layers of the two-dimensional material contained in the active layer 110 may be about 1 to several. However, this is merely exemplary and may include a greater number of layers. In addition, when the two-dimensional material contained in the active layer 110 includes a plurality of layers, the layers may have directionality and may be disposed in parallel with each other, and as another example, may have an intersecting direction.

The active layer 110 is graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenide (TMDC), transition metal trichalcogenide (TMTC) , metal phosphorous trichalcogenide (MPT), black phosphorus, phosphorene, or molybdenum sulfide.

As an example, the active layer 110 may contain the transition metal chalcogenide having a chemical formula of MX2, where M is molybdenum (Mo), tungsten (W), nickel (Ni), titanium (Ti), vanadium transition metal elements such as (V), zirconium (Zr), hafnium (Hf), palladium (Pd), platinum (Pt), niobium (Nb), tantalum (Ta), technetium (Tc), or rhenium (Re) may contain.

And X may contain a chalcogen element such as sulfur (S), selenium (Se), or tellurium (Te).

For example, the active layer 110 may include MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, rSe2, HfS2, HfSe2, NbSe2, ReSe2, or the like.

Also, as another example, the active layer 110 may include SnSe2, GaS, GaSe, GaTe, GeSe, In2Se3, InSnS2, or the like.

As an optional embodiment, the active layer 110 may be doped with an n-type or p-type dopant. For example, the active layer 110 may be doped with an n-type dopant or a p-type dopant by ion implantation or chemical doping.

The gate electrode 120 may be disposed in the groove 101H of the substrate 101 and may be formed to have a height in the first direction. For example, the gate electrode 120 may have a height in the depth direction (the Z-axis direction of FIGS. 2 and 3 ) of the groove 101H of the substrate 101 .

The gate electrode 120 may be disposed to be spaced apart from the active layer 110 .

Also, the gate electrode 120 may be formed to overlap at least one region of the active layer 110 .

For example, the gate electrode 120 may be disposed between the first side surface portion 111 and the second side surface portion 112 of the active layer 110 .

In an optional embodiment, the gate insulating layer 130 may be disposed to insulate the gate electrode 120 and the active layer 110 .

For example, the gate insulating layer 130 may include the first gate insulating layer 131 disposed between the gate electrode 120 and the first side surface 111 of the active layer 110 .

Also, the gate insulating layer 130 may include a second gate insulating layer 132 disposed between the gate electrode 120 and the second side surface 112 of the active layer 110 .

Also, the gate insulating layer 130 may include a third gate insulating layer 133 disposed between the gate electrode 120 and the bottom portion 113 of the active layer 110 .

The gate insulating layer 130 may contain various insulating materials, for example, oxide or nitride.

The gate electrode 120 may be formed to apply an electric field to the active layer 110 .

The gate electrode 120 may include various materials, and may include a material having high electrical conductivity. For example, the gate electrode 120 may be formed using various metals.

For example, the gate electrode 120 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or may be formed using a nitride of these materials.

The source electrode 161 and the drain electrode 162 may be disposed to be spaced apart from the gate electrode 120 .

For example, it may be arranged to have a spaced apart distance from the gate electrode 120 along one direction crossing the height direction of the gate electrode 120 , and specifically, between the source electrode 161 and the drain electrode 162 . A gate electrode 120 may be disposed.

The source electrode 161 and the drain electrode 162 may be disposed in the groove 101H of the substrate 101 and may be formed to have a height in the first direction. For example, the source electrode 161 and the drain electrode 162 may have a height in the depth direction (the Z-axis direction of FIGS. 2 and 3 ) of the groove 101H of the substrate 101 .

The source electrode 161 and the drain electrode 162 may be electrically connected to the active layer 110 and, for example, may be disposed to be in contact with each other.

For example, the source electrode 161 and the drain electrode 162 are disposed between the first side surface portion 111 and the second side surface portion 112 of the active layer 110 , and specifically, the first side surface portion 111 and the second side surface portion 112 . It may be disposed to be in contact with the second side part 112 .

As an optional embodiment, the source electrode 161 and the drain electrode 162 may be disposed on the bottom portion 113 of the active layer 110 , and for example, the source electrode 161 and the drain electrode 162 may be formed on the active layer ( It may be disposed to be in contact with the bottom portion 113 of the 110 .

The source electrode 161 and the drain electrode 162 may be formed using various conductive materials.

For example, the source electrode 161 and the drain electrode 162 may contain various types of metals.

As an example, the source electrode 161 and the drain electrode 162 may include tungsten (W), copper (Cu), gold (Au), silver (Ag), titanium (Ti), tantalum (Ta), ruthenium (Ru), Or it may include cobalt (Co).

Also, as another example, the source electrode 161 and the drain electrode 162 may contain various types of metal nitrides, and specifically, for example, titanium nitride (TiN), tantalum nitride (TaN), cobalt nitride (CoN), Alternatively, it may include tungsten nitride (WN).

In an optional embodiment, one or more spacers 140 may be disposed between the gate electrode 120 and the source electrode 161 and between the gate electrode 120 and the drain electrode 162 .

For example, the two spacers 140 may be formed to be adjacent to the gate electrode 120 , and as a specific example, may be formed to be in contact with the gate electrode 120 .

As an optional embodiment, the spacer 140 may be disposed in contact with the active layer 110, for example, may be disposed between the first side portion 111 and the second side portion 112 of the active layer 110, As a specific example, it may be formed to contact the first side part 111 and the second side part 112 .

In addition, the spacer 140 may be formed on the bottom portion 113 of the active layer 110 , for example, to be in contact with the bottom portion 113 .

As an optional embodiment, the spacer 140 may be disposed to contact the gate insulating layer 130 .

The spacer 140 may include an insulating material, may be formed using various types of organic materials, or may contain inorganic materials as another example.

The gate electrode 120 , the source electrode 161 , and the drain electrode 162 may be insulated through the spacer 140 .

In addition, stable disposition of the gate electrode 120 , the source electrode 161 , and the drain electrode 162 can be easily implemented, and durability of the electronic device 100 can be improved.

The electronic device of the present embodiment may include a gate electrode, a source electrode, and a drain electrode having a height. An active layer may be formed to correspond to one side of the gate electrode, the source electrode, and the drain electrode having such a height.

As an additional example, the active layer may include first and second side surfaces facing each other, and the first and second side portions may be disposed to face each other between the gate electrode, the source electrode, and the drain electrode.

Through this, when a voltage is applied through the gate electrode, it is possible to smoothly flow current between the source electrode and the drain electrode through the active layer, and for example, it is possible to easily increase the current value.

In addition, as an optional embodiment, the active layer may include a bottom portion corresponding to the bottom surfaces of the gate electrode, the source electrode, and the drain electrode, and the effect of improving the current value of the electronic device may be increased.

In addition, a three-dimensional electronic device, for example, a vertical electronic device, as a specific example, a vertical field effect transistor, is formed through the bottom portion of the active layer and the first and second side portions formed to have a height in the intersecting direction. It can be implemented easily.

In addition, as an optional embodiment, the active layer may be formed to contain a two-dimensional material. Through this, it is possible to implement an electronic device with improved electrical characteristics while easily forming the active layer into a thin film.

In addition, the degree of integration per unit area can be easily improved through the electronic device having such a structure.

Meanwhile, an electronic device having a three-dimensional structure can be easily implemented by including the electronic device of this embodiment on a substrate, and forming an active layer, a gate, a source electrode, and a drain electrode in a groove formed in one region of the substrate.

In addition, by forming an active layer, a gate, a source electrode, and a drain electrode in the groove of the substrate to form an electronic device having a three-dimensional structure, parasitic capacitance generated in the electronic device can be reduced. For example, an overlapping area that may occur between two adjacent one of the source electrode, the drain electrode, and the gate electrode may be reduced, and as a result, parasitic capacitance may be reduced. In addition, as a specific example, the electronic device of this embodiment can easily reduce parasitic capacitance compared to a three-dimensional electronic device such as a general Fin FET.

As a result, the driving speed of the electronic device of the present embodiment may be improved.

Figure 4 is a schematic plan view showing an electronic device according to another embodiment of the present invention, Figure 5 is a cross-sectional view taken along the line V-V of Figure 4, Figure 6 is along the line VI-VI of Figure 4 It is a cross-sectional view taken, and FIG. 7 is a cross-sectional view taken along line VII-VII of FIG.

4 to 7 , the electronic device 200 according to the present embodiment may include a gate electrode 220 , a source electrode 261 , a drain electrode 262 , and an active layer 210 .

As an alternative embodiment, the electronic device 200 may include a substrate 201 .

The substrate 201 may include one or more grooves 201H.

The gate electrode 220 , the source electrode 261 , the drain electrode 262 , and the active layer 210 may be formed on the substrate 201 , and may be formed, for example, in the groove 201H of the substrate 201 . have.

The groove 201H may have a shape similar to that removed by a predetermined depth of the substrate 201 , and the groove 201H may be formed using various methods.

As an alternative embodiment, the groove 201H may extend to at least one side surface of the substrate 201 . Accordingly, at least one side surface of the source electrode 261 or the drain electrode 262 may be exposed to one side of the substrate 201 through the groove 201H, and through this, the source electrode 261 or the drain electrode The configuration of the electrical connection to 262 can be designed in various ways.

The groove 201H may be formed by various methods, for example, various types of etching methods for the substrate 201 may be performed to form the groove 201H.

The substrate 201 may be formed in various shapes, for example, the substrate 201 may have a shape having a constant thickness.

The substrate 201 may be formed of various materials, and may contain, for example, an insulating material. For example, the substrate 201 may contain a silicon-based inorganic material, and, as a specific example, may contain silicon oxide.

Also, as another example, the substrate 201 may contain a glass material or a plastic material. The substrate 201 may be formed to be rigid or flexible as needed.

As an alternative embodiment, the substrate 201 may include a ceramic substrate such as alumina or a flexible polymer.

The gate electrode 220 , the source electrode 261 , the drain electrode 262 , and the active layer 210 will be described. As described above, the gate electrode 220 , the source electrode 261 , the drain electrode 262 , and the active layer 210 may be formed in the groove 201H of the substrate 201 .

The active layer 210 may be disposed in the groove 201H.

The active layer 210 may be formed on at least one surface of the groove 201H of the substrate 201 , and may include, for example, the first side portion 211 formed in one region of the side surface of the groove 201H. The first side portion 211 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 201H of the substrate 201 . As an optional embodiment, the first side portion 211 may have a length equal to the length of the groove 201H in one direction.

As an optional embodiment, the first side portion 211 may face the source electrode 261 , the gate electrode 220 , and the drain electrode 262 , for example, the source electrode 261 , the gate electrode 220 and the drain. It may be formed to face one side of the electrode 262 .

Also, as an example, the active layer 210 may include a second side surface portion 212 formed to face the first side surface portion 211 in one region of a side surface of the groove 201H. The second side part 212 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 201H of the substrate 201 . As an optional embodiment, the second side portion 212 may have a length equal to the length of the groove 201H in one direction.

As an optional embodiment, the first side part 211 and the second side part 212 may be spaced apart from each other, may face each other, and for example, may be arranged side by side.

As an optional embodiment, the second side part 212 may face the source electrode 261 , the gate electrode 220 , and the drain electrode 262 , for example, the source electrode 261 , the gate electrode 220 and the drain. It may be formed to face one side of the electrode 262 .

Through this, the source electrode 261 , the gate electrode 220 , and the drain electrode 262 may be disposed between the first side part 211 and the second side part 212 .

In addition, as an example, the active layer 210 is the bottom surface of the groove 201H, for example, the surface furthest from the open upper region of the groove 201H (groove 201H with reference to FIGS. 5 to 7 ). ) may include a bottom portion 213 .

As an optional embodiment, the bottom part 213 may be formed to connect the first side part 211 and the second side part 212 .

In addition, the bottom portion 213 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 201H of the substrate 201 . As an optional embodiment, the bottom portion 213 may have a length equal to the length of the groove 201H in one direction.

As an optional embodiment, the bottom portion 213 may face the source electrode 261 , the gate electrode 220 , and the drain electrode 262 , for example, the source electrode 261 , the gate electrode 220 and the drain electrode. It may be formed to face the bottom surface of the 262 .

Through this, the source electrode 261 , the gate electrode 220 , and the drain electrode 262 may be disposed on the bottom portion 213 .

As an example, the active layer 210 is formed on the bottom portion 213 by the first side portion 211 and the second side portion extending in a direction crossing the plane direction of the bottom portion 213 , specifically, in a direction orthogonal to the bottom portion 213 . 212 , the first side portion 211 and the second side portion 212 may be spaced apart from each other to form a spaced region therebetween.

In addition, as an optional embodiment, the active layer 210 may further include one or more side portions (not shown) formed to have a length in a direction crossing the first side portion 211 and the second side portion 212 facing each other, This side part (not shown) may be formed to be connected to, for example, the first side part 211 and the second side part 212 .

The active layer 210 may be formed to contain various materials.

The active layer 210 may contain various semiconductor materials.

In an alternative embodiment, the active layer 210 may contain a 2D material. The two-dimensional material contained in the active layer 210 may include a semiconductor material having a two-dimensional crystal structure, and may have a monolayer or multilayer structure.

In addition, each layer of the two-dimensional material contained in the active layer 210 may have an atomic level thickness, and the respective layers may be connected to each other by a Van Der Waals bond. can

In addition, the number of layers of the two-dimensional material contained in the active layer 210 may be about 1 to several. However, this is merely exemplary and may include a greater number of layers. In addition, when the two-dimensional material contained in the active layer 210 includes a plurality of layers, the layers may have a directionality and may be disposed in parallel with each other, and as another example, may have an intersecting direction.

The active layer 210 is graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenide (TMDC), transition metal trichalcogenide (TMTC) , metal phosphorous trichalcogenide (MPT), black phosphorus, phosphorene, or molybdenum sulfide.

As an example, the active layer 210 may contain the transition metal chalcogenide having a chemical formula of MX2, wherein M is molybdenum (Mo), tungsten (W), nickel (Ni), titanium (Ti), vanadium transition metal elements such as (V), zirconium (Zr), hafnium (Hf), palladium (Pd), platinum (Pt), niobium (Nb), tantalum (Ta), technetium (Tc), or rhenium (Re) may contain.

And X may contain a chalcogen element such as sulfur (S), selenium (Se), or tellurium (Te).

For example, the active layer 210 may include MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, rSe2, HfS2, HfSe2, NbSe2, ReSe2, or the like.

Also, as another example, the active layer 210 may include SnSe2, GaS, GaSe, GaTe, GeSe, In2Se3, InSnS2, or the like.

As an optional embodiment, the active layer 210 may be doped with an n-type or p-type dopant, for example, the active layer 210 may be doped with an n-type dopant or a p-type dopant by ion implantation or chemical doping.

The gate electrode 220 may be disposed in the groove 201H of the substrate 201 and may be formed to have a height in the first direction. For example, the gate electrode 220 may have a height in the depth direction (the Z-axis direction of FIGS. 4 to 7 ) of the groove 201H of the substrate 201 .

As a specific example, the gate electrode 220 may have a columnar shape having a height. 4 to 7 show the shape of a rectangular pillar, in addition to this, various types of pillars may be included.

As shown in the drawing, the gate electrode 220 may be formed so as not to protrude to the outside of the groove 201H, and, for example, may have an upper surface parallel to the plane of the substrate 201 .

Also, although not shown, the height of the gate electrode 220 may be smaller than the depth of the groove 201H.

Also, although not shown, the height of the gate electrode 220 is greater than the depth of the groove 201H, and through this, an upper portion of the gate electrode 220 may protrude to the outside of the groove 201H.

The gate electrode 220 may be disposed to be spaced apart from the active layer 210 .

Also, the gate electrode 220 may be formed to overlap at least one region of the active layer 210 .

For example, the gate electrode 220 may be disposed between the first side part 211 and the second side part 212 of the active layer 210 .

As an optional embodiment, the gate insulating layer 230 may be disposed to insulate the gate electrode 220 and the active layer 210 .

For example, the gate insulating layer 230 may include a first gate insulating layer 231 disposed between the gate electrode 220 and the first side surface 212 of the active layer 210 .

Also, the gate insulating layer 230 may include a second gate insulating layer 232 disposed between the gate electrode 220 and the second side surface 212 of the active layer 210 .

Also, the gate insulating layer 230 may include a third gate insulating layer 233 disposed between the gate electrode 220 and the bottom portion 213 of the active layer 210 .

The gate insulating layer 230 may contain various insulating materials, for example, oxide or nitride.

The gate electrode 220 may be formed to apply an electric field to the active layer 210 .

The gate electrode 220 may include various materials, and may include a material having high electrical conductivity. For example, the gate electrode 220 may be formed using various metals.

For example, the gate electrode 220 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or may be formed using a nitride of these materials.

The source electrode 261 and the drain electrode 262 may be disposed to be spaced apart from the gate electrode 220 .

For example, it may be arranged to have a spaced apart distance from the gate electrode 220 along one direction crossing the height direction of the gate electrode 220 , and specifically, between the source electrode 261 and the drain electrode 262 . A gate electrode 220 may be disposed.

The source electrode 261 and the drain electrode 262 may be disposed in the groove 201H of the substrate 201 and may be formed to have a height in the first direction. For example, the source electrode 261 and the drain electrode 262 may have a height in the depth direction (the Z-axis direction of FIGS. 4 to 7 ) of the groove 201H of the substrate 201 .

As a specific example, the source electrode 261 or the drain electrode 262 may have a columnar shape having a height. 4 to 7 show the shape of a rectangular pillar, in addition to this, various types of pillars may be included.

As shown in the drawing, the source electrode 261 or the drain electrode 262 may be formed so as not to protrude out of the groove 201H, and, for example, have an upper surface parallel to the plane of the substrate 201. can

Also, although not shown, the height of the source electrode 261 or the drain electrode 262 may be smaller than the depth of the groove 201H.

Also, although not shown, the height of the source electrode 261 or the drain electrode 262 is greater than the depth of the groove 201H, and through this, a region of the upper end of the gate electrode 220 may protrude to the outside of the groove 201H. have.

The source electrode 261 and the drain electrode 262 may be electrically connected to the active layer 210 and, for example, may be disposed to contact each other.

For example, the source electrode 261 and the drain electrode 262 are disposed between the first side part 211 and the second side part 212 of the active layer 210 , and specifically, the first side part 211 and the second side part 212 . It may be disposed to be in contact with the second side portion 212 .

As an optional embodiment, the source electrode 261 and the drain electrode 262 may be disposed on the bottom portion 213 of the active layer 210, for example, the source electrode 261 and the drain electrode 262 are the active layer ( It may be disposed to contact the bottom portion 213 of the 210 .

The source electrode 261 and the drain electrode 262 may be formed using various conductive materials.

For example, the source electrode 261 and the drain electrode 262 may contain various types of metals.

As an example, the source electrode 261 and the drain electrode 262 may include tungsten (W), copper (Cu), gold (Au), silver (Ag), titanium (Ti), tantalum (Ta), ruthenium (Ru), Or it may include cobalt (Co).

As another example, the source electrode 261 and the drain electrode 262 may contain various types of metal nitrides, and specifically, for example, titanium nitride (TiN), tantalum nitride (TaN), cobalt nitride (CoN), Alternatively, it may include tungsten nitride (WN).

In an optional embodiment, one or more spacers 240 may be disposed between the gate electrode 220 and the source electrode 261 and between the gate electrode 220 and the drain electrode 262 .

For example, the two spacers 240 may be formed to be adjacent to the gate electrode 220 , and as a specific example, may be formed to be in contact with the gate electrode 220 .

As an optional embodiment, the spacer 240 may be disposed in contact with the active layer 210, for example, may be disposed between the first side portion 211 and the second side portion 212 of the active layer 210, As a specific example, it may be formed to contact the first side part 211 and the second side part 212 .

In addition, the spacer 240 may be formed on the bottom portion 213 of the active layer 210 , for example, to be in contact with the bottom portion 213 .

As an optional embodiment, the spacer 240 may be disposed to contact the gate insulating layer 230 .

The spacer 240 may include an insulating material, may be formed using various types of organic materials, or may contain an inorganic material as another example.

The gate electrode 220 , the source electrode 261 , and the drain electrode 262 may be insulated through the spacer 240 .

In addition, stable disposition of the gate electrode 220 , the source electrode 261 , and the drain electrode 262 may be easily implemented, and durability of the electronic device 200 may be improved.

The electronic device of the present embodiment may include a gate electrode, a source electrode, and a drain electrode having a height. An active layer may be formed to correspond to one side of the gate electrode, the source electrode, and the drain electrode having such a height.

In addition, the electronic device of the present embodiment includes a substrate, and a gate electrode, an active layer, a source electrode, and a drain electrode may be formed in the groove formed in the substrate.

Through this, it is possible to easily implement a three-dimensional electronic device, for example, a vertical electronic device, specifically, a vertical field effect transistor.

In addition, as an optional embodiment, the active layer may be formed to contain a two-dimensional material. Through this, it is possible to implement an electronic device with improved electrical characteristics while easily forming the active layer into a thin film.

In addition, the degree of integration per unit area can be easily improved through the electronic device having such a structure.

8 is a schematic plan view showing an electronic device according to another embodiment of the present invention, FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8, and FIG. 10 is a line X-X of FIG. It is a cross-sectional view taken along the line, and FIG. 11 is a cross-sectional view taken along the line XI-XI of FIG.

8 to 11 , the electronic device 300 according to the present embodiment may include a plurality of device parts 300A and 300B. Although the drawing shows two element parts 300A and 300B, as another example, three or more element parts may be included.

The device portion 300A and the device portion 300B of the plurality of device portions 300A and 300B may include a gate electrode 320 , a source electrode 361 , a drain electrode 362 , and an active layer 310 .

As an alternative embodiment, the electronic device 300 may include a substrate 301 .

The substrate 301 may include one or more grooves 301H.

For example, two grooves 301H may be formed in the substrate 301 . As an optional embodiment, the number of grooves 301H may be determined according to the number of element parts to be included in the electronic element 300 , and for example, three or more may be formed.

The grooves 301H may be formed to be spaced apart from each other, and through this, each of the element unit 300A and the element unit 300B may not be electrically interfered with.

A gate electrode 320, a source electrode 361, a drain electrode 362, and an active layer 310 may be formed on the substrate 301 to correspond to each of the device portion 300A and the device portion 300B, For example, it may be formed in each of the two grooves 301H of the substrate 301 .

The groove 301H may have a shape similar to that removed by a predetermined depth of the substrate 301 , and the groove 301H may be formed using various methods.

As an optional embodiment, the groove 301H may extend to at least one side surface of the substrate 301 . Through this, at least one side surface of the source electrode 361 or the drain electrode 362 may have a form in which one side surface of the substrate 301 is exposed through the groove 301H, and through this, the source electrode 361 or the drain electrode The configuration of the electrical connection to (362) can be designed in various ways.

The groove 301H may be formed by various methods, for example, various types of etching methods may be performed on the substrate 301 to form the groove 301H.

The substrate 301 may be formed in various shapes, for example, the substrate 301 may have a shape having a constant thickness.

The substrate 301 may be formed of various materials, and may contain, for example, an insulating material. For example, the substrate 301 may contain a silicon-based inorganic material, and, as a specific example, may contain silicon oxide.

Also, as another example, the substrate 301 may contain a glass material or a plastic material. The substrate 301 may be formed to be rigid or flexible as needed.

As an alternative embodiment, the substrate 301 may include a ceramic substrate such as alumina or a flexible polymer.

The gate electrode 320 , the source electrode 361 , the drain electrode 362 , and the active layer 310 will be described. As described above, the gate electrode 320 , the source electrode 361 , the drain electrode 362 , and the active layer 310 may be formed in the groove 301H of the substrate 301 .

The active layer 310 may be disposed in each of the two grooves 301H to correspond to each of the device portion 300A and the device portion 300B.

For convenience of description, one of the device portion 300A and the device portion 300B, for example, the active layer 310 corresponding to the device portion 300A will be described as a reference.

Also, the active layer 310 of the device unit 300A and the active layer 310 of the device unit 300B may be formed to be spaced apart from each other.

The active layer 310 may be formed on at least one surface of the groove 301H of the substrate 301 , and may include, for example, the first side portion 311 formed in one region of the side surface of the groove 301H. The first side part 311 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 301H of the substrate 301 . As an optional embodiment, the first side part 311 may have a length equal to the length of the groove 301H in one direction.

As an optional embodiment, the first side portion 311 may face the source electrode 361 , the gate electrode 320 , and the drain electrode 362 , for example, the source electrode 361 , the gate electrode 320 and the drain. It may be formed to face one side of the electrode 362 .

Also, as an example, the active layer 310 may include a second side surface portion 312 formed to face the first side surface portion 311 in one region of a side surface of the groove 301H. The second side portion 312 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 301H of the substrate 301 . As an optional embodiment, the second side portion 312 may have a length equal to the length of the groove 301H in one direction.

As an optional embodiment, the first side part 311 and the second side part 312 may be spaced apart from each other, may face each other, and may be arranged side by side, for example.

As an optional embodiment, the second side portion 312 may face the source electrode 361 , the gate electrode 320 , and the drain electrode 362 , for example, the source electrode 361 , the gate electrode 320 and the drain. It may be formed to face one side of the electrode 362 .

Through this, the source electrode 361 , the gate electrode 320 , and the drain electrode 362 may be disposed between the first side part 311 and the second side part 312 .

In addition, as an example, the active layer 310 is the bottom surface of the groove 301H, for example, the surface furthest from the open upper region of the groove 301H (groove 301H with reference to FIGS. 9 to 11 ). The bottom portion 313 may be included in the bottom portion 313 .

As an optional embodiment, the bottom part 313 may be formed to connect the first side part 311 and the second side part 312 .

In addition, the bottom portion 313 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 301H of the substrate 301 . As an optional embodiment, the bottom portion 313 may have a length equal to the length of the groove 301H in one direction.

As an optional embodiment, the bottom part 313 may face the source electrode 361 , the gate electrode 320 , and the drain electrode 362 , for example, the source electrode 361 , the gate electrode 320 , and the drain electrode. It may be formed to face the bottom surface of (362).

Through this, the source electrode 361 , the gate electrode 320 , and the drain electrode 362 may be disposed on the bottom portion 313 .

As an example, the active layer 310 is formed on the bottom portion 313 in a direction crossing the plane direction of the bottom portion 313, specifically, the first side portion 311 and the second side portion extending in a direction orthogonal to each other. 312 , the first side part 311 and the second side part 312 may be spaced apart from each other to form a spaced region therebetween.

In addition, as an optional embodiment, the active layer 310 may further include a side part (not shown) formed to have a length in a direction crossing the first side part 311 and the second side part 312 , and such a side part (not shown) ) may be formed to be connected to, for example, the first side part 311 and the second side part 312 .

The active layer 310 may be formed to contain various materials.

The active layer 310 may contain various semiconductor materials.

In an alternative embodiment, the active layer 310 may contain a 2D material. The two-dimensional material contained in the active layer 310 may include a semiconductor material having a two-dimensional crystal structure, and may have a monolayer or multilayer structure.

In addition, each layer of the two-dimensional material contained in the active layer 310 may have an atomic level thickness, and the respective layers may be connected to each other by a Van Der Waals bond. can

In addition, the number of layers of the two-dimensional material contained in the active layer 310 may be about 1 to several. However, this is merely exemplary and may include a greater number of layers. In addition, when the two-dimensional material contained in the active layer 310 includes a plurality of layers, the layers may have directionality and may be disposed in parallel with each other, and as another example, may have directions that cross each other.

The active layer 310 is graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenide (TMDC), transition metal trichalcogenide (TMTC) , metal phosphorous trichalcogenide (MPT), black phosphorus, phosphorene, or molybdenum sulfide.

As an example, the active layer 310 may contain the transition metal chalcogenide having a chemical formula of MX2, wherein M is molybdenum (Mo), tungsten (W), nickel (Ni), titanium (Ti), vanadium transition metal elements such as (V), zirconium (Zr), hafnium (Hf), palladium (Pd), platinum (Pt), niobium (Nb), tantalum (Ta), technetium (Tc), or rhenium (Re) may contain.

And X may contain a chalcogen element such as sulfur (S), selenium (Se), or tellurium (Te).

For example, the active layer 310 may include MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, rSe2, HfS2, HfSe2, NbSe2, ReSe2, or the like.

Also, as another example, the active layer 310 may include SnSe2, GaS, GaSe, GaTe, GeSe, In2Se3, InSnS2, or the like.

As an optional embodiment, the active layer 310 may be doped with an n-type or p-type dopant, for example, the active layer 310 may be doped with an n-type dopant or a p-type dopant by ion implantation or chemical doping.

The gate electrode 320 may be disposed in each of the two grooves 301H to correspond to each of the device portion 300A and the device portion 300B.

For convenience of description, one of the device portion 300A and the device portion 300B, for example, the gate electrode 320 corresponding to the device portion 300A will be described as a reference.

Also, the gate electrode 320 of the device portion 300A and the gate electrode 320 of the device portion 300B may be formed to be spaced apart from each other.

The gate electrode 320 may be disposed to have a height in the first direction in the groove 301H of the substrate 301 . For example, the gate electrode 320 may have a height in the depth direction (the Z-axis direction of FIGS. 8 to 11 ) of the groove 301H of the substrate 301 .

As a specific example, the gate electrode 320 may have a columnar shape having a height. 8 to 11 show the shape of a square pillar, in addition to this, various types of pillars may be included.

As shown in the drawing, the gate electrode 320 may be formed so as not to protrude to the outside of the groove 301H, and, for example, may have an upper surface parallel to the plane of the substrate 301 .

Also, although not shown, the height of the gate electrode 320 may be smaller than the depth of the groove 301H.

Also, although not shown, the height of the gate electrode 320 is greater than the depth of the groove 301H, and through this, a region of the upper end of the gate electrode 320 may protrude to the outside of the groove 301H.

The gate electrode 320 may be disposed to be spaced apart from the active layer 310 .

Also, the gate electrode 320 may be formed to overlap at least one region of the active layer 310 .

For example, the gate electrode 320 may be disposed between the first side surface portion 311 and the second side surface portion 312 of the active layer 310 .

As an optional embodiment, a gate insulating layer 330 may be disposed to insulate the gate electrode 320 and the active layer 310 .

For example, the gate insulating layer 330 may include a first gate insulating layer 331 disposed between the gate electrode 320 and the first side surface 311 of the active layer 310 .

Also, the gate insulating layer 330 may include a second gate insulating layer 332 disposed between the gate electrode 320 and the second side surface 312 of the active layer 310 .

Also, the gate insulating layer 330 may include a third gate insulating layer 333 disposed between the gate electrode 320 and the bottom portion 313 of the active layer 310 .

The gate insulating layer 330 may contain various insulating materials, for example, oxide or nitride.

The gate electrode 320 may be formed to apply an electric field to the active layer 310 .

The gate electrode 320 may include various materials, and may include a material having high electrical conductivity. For example, the gate electrode 320 may be formed using various metals.

For example, the gate electrode 320 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or may be formed using a nitride of these materials.

The source electrode 361 and the drain electrode 362 may be disposed in each of the two grooves 301H to correspond to each of the device portion 300A and the device portion 300B.

For convenience of description, one of the device portion 300A and the device portion 300B, for example, the source electrode 361 and the drain electrode 362 corresponding to the device portion 300A will be described as a reference.

The source electrode 361 and the drain electrode 362 may be disposed to be spaced apart from the gate electrode 320 .

For example, it may be arranged to have a spaced apart distance from the gate electrode 320 along one direction crossing the height direction of the gate electrode 320 , and specifically, between the source electrode 361 and the drain electrode 362 . A gate electrode 320 may be disposed.

The source electrode 361 and the drain electrode 362 may be disposed in the groove 301H of the substrate 301 and may be formed to have a height in the first direction. For example, the source electrode 361 and the drain electrode 362 may have a height in the depth direction (the Z-axis direction of FIGS. 8 to 11 ) of the groove 301H of the substrate 301 .

As a specific example, the source electrode 361 or the drain electrode 362 may have a columnar shape having a height. 8 to 11 show the shape of a square pillar, in addition to this, various types of pillars may be included.

As shown in the drawing, the source electrode 361 or the drain electrode 362 may be formed so as not to protrude outside the groove 301H, and, for example, have an upper surface parallel to the plane of the substrate 301. can

Also, although not shown, the height of the source electrode 361 or the drain electrode 362 may be smaller than the depth of the groove 301H.

Also, although not shown, the height of the source electrode 361 or the drain electrode 362 is greater than the depth of the groove 301H, and through this, a region of the upper end of the gate electrode 320 may protrude to the outside of the groove 301H. have.

The source electrode 361 and the drain electrode 362 may be electrically connected to the active layer 310 and, for example, may be in contact with each other.

For example, the source electrode 361 and the drain electrode 362 are disposed between the first side surface portion 311 and the second side surface portion 312 of the active layer 310 , and specifically, the first side surface portion 311 and the second side surface portion 311 . It may be disposed to be in contact with the second side portion 312 .

As an optional embodiment, the source electrode 361 and the drain electrode 362 may be disposed on the bottom portion 313 of the active layer 310, for example, the source electrode 361 and the drain electrode 362 are the active layer ( It may be disposed to be in contact with the bottom portion 313 of the 310 .

The source electrode 361 and the drain electrode 362 may be formed using various conductive materials.

For example, the source electrode 361 and the drain electrode 362 may contain various types of metals.

As an example, the source electrode 361 and the drain electrode 362 may include tungsten (W), copper (Cu), gold (Au), silver (Ag), titanium (Ti), tantalum (Ta), ruthenium (Ru), Or it may include cobalt (Co).

As another example, the source electrode 361 and the drain electrode 362 may contain various types of metal nitrides, and specifically, for example, titanium nitride (TiN), tantalum nitride (TaN), cobalt nitride (CoN), Alternatively, it may include tungsten nitride (WN).

In an optional embodiment, one or more spacers 340 may be disposed between the gate electrode 320 and the source electrode 361 and between the gate electrode 320 and the drain electrode 362 .

For example, the two spacers 340 may be formed to be adjacent to the gate electrode 320 , and as a specific example, may be formed to be in contact with the gate electrode 320 .

As an optional embodiment, the spacer 340 may be disposed in contact with the active layer 310, for example, may be disposed between the first side portion 311 and the second side portion 312 of the active layer 310, As a specific example, it may be formed to contact the first side part 311 and the second side part 312 .

In addition, the spacer 340 may be formed on the bottom portion 313 of the active layer 310 , for example, to be in contact with the bottom portion 313 .

As an optional embodiment, the spacer 340 may be disposed to contact the gate insulating layer 330 .

The spacer 340 may include an insulating material, may be formed using various types of organic material, and may contain an inorganic material as another example.

The gate electrode 320 , the source electrode 361 , and the drain electrode 362 may be insulated through the spacer 340 .

In addition, stable disposition of the gate electrode 320 , the source electrode 361 , and the drain electrode 362 can be easily implemented, and durability of the electronic device 300 can be improved.

The electronic device of the present embodiment may include a plurality of device parts. Each of the plurality of device parts may be formed in a groove disposed to be spaced apart from each other on the substrate. Each of the plurality of device portions corresponding to each groove may include a gate electrode, a source electrode, and a drain electrode having a height. An active layer may be formed to correspond to one side of the gate electrode, the source electrode, and the drain electrode having such a height.

Through this, it is possible to form a plurality of device parts corresponding to the grooves formed to be distinguished from each other, and each of the plurality of device parts can easily form a three-dimensional electronic device, for example, a vertical electronic device, specifically, a vertical field effect transistor. As a result, it is possible to easily implement an electronic device having improved electrical characteristics, improved precision, and increased integration efficiency.

In addition, as an optional embodiment, the active layer may be formed to contain a two-dimensional material. Through this, it is possible to implement an electronic device with improved electrical characteristics while easily forming the active layer into a thin film.

12 to 16 are cross-sectional views for explaining a method of manufacturing an electronic device according to an embodiment of the present invention.

For example, FIGS. 12 to 16 illustrate a method of manufacturing the electronic device 300 of FIGS. 7 to 11 described above.

Specifically, the drawings are for explaining a method of manufacturing the electronic device 300 including the plurality of device parts 300A and 300B.

Although not described, the manufacturing method of the present embodiment may be applied to the other embodiments described above, or may be modified and applied as necessary.

Referring to FIG. 12 , a groove 301H may be formed on the substrate 301 .

For example, two grooves 301H may be formed in the substrate 301 . As an optional embodiment, the number of grooves 301H may be determined according to the number of element parts to be included in the electronic element 300 , and for example, three or more may be formed.

The grooves 301H may be formed to be spaced apart from each other, and the groove 301H may be formed through a process of removing a predetermined depth of the substrate 301 , for example, a desired size using a patterning process such as a photolithography method. And the groove 301H can be formed in the shape.

In addition, the groove 301H may be formed by performing an etching process such as laser etching without a separate pre-patterning process.

Referring to FIG. 13 , the active layer 310 may be formed on the inner surface of the groove 301H. For example, the active layer 310 may be formed to be disposed in each of the grooves 301H, and a first side portion 311 is formed in one area of a side surface of the groove 301H, and faces the first side portion 311 . The second side part 312 may be formed to do this, and the bottom part 313 may be formed on the bottom surface of the groove 301H.

For example, the active layer 310 may be easily formed by growing various semiconductor materials, specifically, a 2D material, on the inner surface and the bottom surface of the groove 301H.

Referring to FIG. 14 , a gate insulating layer 330 may be formed on the active layer 310 on the inner surface of the groove 301H. For example, the gate insulating film 330 may include a first gate insulating film 331 formed on the first side surface 311, a second gate insulating film 332 formed on the second side surface 312 of the active layer 310, and an active layer ( A third gate insulating layer 333 formed on the bottom portion 313 of the 310 may be included.

For example, the gate insulating layer 330 may be formed using various insulating materials, for example, oxide or nitride, and may be formed using various film formation methods, specifically, a deposition method.

Referring to FIG. 15 , the gate electrode 320 may be formed on the gate insulating layer 330 .

For example, the gate electrode 320 may be formed in each of the two grooves 301H.

The gate electrode 320 may be formed in the groove 301H of the substrate 301 to have a height in the first direction.

Through this, the gate electrode 320 may be formed to be spaced apart from the active layer 310 .

Also, the gate electrode 320 may be formed to overlap at least one region of the active layer 310 .

For example, the gate electrode 320 may be formed to be disposed between the first side part 311 and the second side part 312 of the active layer 310 , and may be disposed to overlap the bottom part 313 .

For example, the first gate insulating layer 331 of the gate insulating layer 330 is disposed between the gate electrode 320 and the first side part 311 of the active layer 310 , and the second gate insulating layer 332 is the gate electrode The gate electrode 320 may be disposed between the 320 and the second side part 312 , and the third gate insulating layer 333 may be disposed between the gate electrode 320 and the bottom part 313 . .

The gate electrode 320 may be formed to apply an electric field to the active layer 310, for example, may include a material having high electrical conductivity, for example, using various metals to form the gate electrode 320. can be formed

For example, the gate electrode 320 may be formed to contain a metal material such as aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper by using various thin film forming methods such as sputtering.

Referring to FIG. 16 , as an alternative embodiment, one or more spacers 340 may be formed in the groove 301H. For example, the spacer 340 may be formed between the gate electrode 320 of FIG. 15 and the source electrode 361 of FIG. 16 to be described later, and between the gate electrode 320 and the drain electrode 362 .

As an example, the spacer 340 may be formed in contact with the active layer 310 , and for example, the spacer 340 may be formed between the first side part 311 and the second side part 312 of the active layer 310 . can be formed In addition, the spacer 340 may be selectively formed to contact the first side part 311 and the second side part 312 .

In addition, the spacer 340 may be formed on the bottom portion 313 of the active layer 310 so as to be in contact with the bottom portion 313 .

As an optional embodiment, the spacer 340 may be disposed to contact the gate insulating layer 330 .

The spacer 340 may include an insulating material, may be formed using various types of organic material, and may contain an inorganic material as another example.

Referring to FIG. 17 , a source electrode 361 and a drain electrode 362 may be formed in each of the two grooves 301H.

The gate electrode 320 , the spacer 340 , the source electrode 361 , and the drain electrode 362 may be formed in various orders, for example, the order of description in the drawings does not limit the order of steps in the manufacturing method.

The source electrode 361 and the drain electrode 362 may be formed to be spaced apart from the gate electrode 320 , and specifically, the gate electrode 320 may be disposed between the source electrode 361 and the drain electrode 362 . can do.

The source electrode 361 and the drain electrode 362 may be formed to have a height in the first direction in the groove 301H of the substrate 301 . For example, the source electrode 361 and the drain electrode 362 may be formed to have a depth direction of the groove 301H of the substrate 301 .

Also, specifically, the source electrode 361 and the drain electrode 362 may be formed to be electrically connected to the active layer 310 , for example, to be in contact with the active layer 310 .

For example, the source electrode 361 and the drain electrode 362 may be formed between the first side part 311 and the second side part 312 of the active layer 310 , and as a specific example, the first side part 311 . and the second side part 312 may be formed.

At this time, the source electrode 361 and the drain electrode 362 may be disposed on the bottom portion 313 of the active layer 310 , for example, the source electrode 361 and the drain electrode 362 are the active layer 310 . It may be formed to be in contact with the bottom portion 313 of the .

The source electrode 361 and the drain electrode 362 may be formed using various conductive materials, and for example, the source electrode 361 and the drain electrode 362 may be formed of tungsten ( W), copper (Cu), gold (Au), silver (Ag), titanium (Ti), tantalum (Ta), ruthenium (Ru), or cobalt (Co) may be formed to contain a metal material.

The manufacturing method of the electronic device of this embodiment may have various methods, and as an example, one or more grooves may be formed on a substrate, and an active layer may be formed to correspond to the grooves. It may be formed to connect the first side part, the second side part facing it, and the bottom part.

In addition, in the inner space formed of the active layer, the gate electrode may be formed to have a height to be insulated from the active layer, and the source and drain electrodes may be formed to be spaced apart from the gate electrode. In this case, the source electrode and the drain electrode may be formed on the bottom portion of the active layer and may be formed to be connected to the first side portion and the second side portion between the first side portion and the second side portion.

Through this, it is possible to easily form an electronic device having a three-dimensional structure, for example, a vertical electronic device shape. In addition, an electronic device including a plurality of device parts can be easily formed, and an electronic device having an easily improved degree of integration can be manufactured.

18 is a schematic plan view showing an electronic device according to another embodiment of the present invention, and FIG. 19 is a cross-sectional view taken along the line XVIII-XVIII of FIG. 18 .

18 and 19 , the electronic device 400 according to the present embodiment may include a plurality of device parts 400A and 400B. Although the drawing shows two element parts 400A and 400B, as another example, three or more element parts may be included.

The device portion 400A and the device portion 400B of the plurality of device portions 400A and 400B may include a gate electrode 420 , a source electrode 461 , a drain electrode 462 , and an active layer 410 .

In an alternative embodiment, the electronic device 400 may include a substrate 401 .

The substrate 401 may include one or more grooves 401H.

For example, two grooves 401H may be formed in the substrate 401 . As an optional embodiment, the number of grooves 401H may be determined according to the number of element parts to be included in the electronic element 400 , and for example, three or more may be formed.

The grooves 401H may be formed to be spaced apart from each other, and through this, each of the element unit 400A and the element unit 400B may not be electrically interfered with.

The groove 401H may be formed so that the side surfaces, for example, four side surfaces in FIG. 18 are limited to each other by the material of the substrate 401 . Although not shown, the groove 401H may be formed in an open form at least one of the side surfaces.

In addition, although not shown, as an alternative embodiment, the groove 401H may be formed to correspond to the entire thickness of the substrate 401 , and the device portion 400A and the device portion 400B may be formed to correspond to this.

A gate electrode 420, a source electrode 461, a drain electrode 462, and an active layer 410 may be formed on the substrate 401 to correspond to each of the device portion 400A and the device portion 400B, For example, it may be formed in each of the two grooves 401H of the substrate 401 .

The groove 401H may be formed by various methods, for example, various types of etching methods for the substrate 401 may be performed to form the groove 401H.

The substrate 401 may be formed in various shapes, for example, the substrate 401 may have a shape having a constant thickness.

The substrate 401 may be formed of various materials, and may contain, for example, an insulating material. For example, the substrate 401 may contain a silicon-based inorganic material, and, as a specific example, may contain silicon oxide.

Also, as another example, the substrate 401 may contain a glass material or a plastic material. The substrate 401 may be formed to be rigid or flexible as needed.

As an alternative embodiment, the substrate 401 may include a ceramic substrate such as alumina or a flexible polymer.

The gate electrode 420 , the source electrode 461 , the drain electrode 462 , and the active layer 410 will be described. As described above, the gate electrode 420 , the source electrode 461 , the drain electrode 462 , and the active layer 410 may be formed in the groove 401H of the substrate 401 .

The active layer 410 may be disposed in each of the two grooves 401H to correspond to each of the device portion 400A and the device portion 400B.

For convenience of description, one of the device portion 400A and the device portion 400B, for example, the active layer 410 corresponding to the device portion 400A will be described as a reference.

Also, the active layer 410 of the device unit 400A and the active layer 410 of the device unit 400B may be formed to be spaced apart from each other.

The active layer 410 may be formed on at least one surface of the groove 401H of the substrate 401 , and may include, for example, the first side portion 411 formed in one region of the side surface of the groove 401H. The first side portion 411 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 401H of the substrate 401 . As an optional embodiment, the first side portion 411 may have a length equal to the length of the groove 401H in one direction.

As an optional embodiment, the first side portion 411 may face the source electrode 461 , the gate electrode 420 , and the drain electrode 462 , for example, the source electrode 461 , the gate electrode 420 and the drain. It may be formed to face one side of the electrode 462 .

Also, as an example, the active layer 410 may include a second side surface portion 412 formed to face the first side surface portion 411 in one region of a side surface of the groove 401H. The second side portion 412 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 401H of the substrate 401 . As an optional embodiment, the second side portion 412 may have a length equal to the length of the groove 401H in one direction.

As an optional embodiment, the first side part 411 and the second side part 412 may be spaced apart from each other, may face each other, and for example, may be arranged side by side.

As an optional embodiment, the second side portion 412 may face the source electrode 461 , the gate electrode 420 , and the drain electrode 462 , for example, the source electrode 461 , the gate electrode 420 and the drain. It may be formed to face one side of the electrode 462 .

Through this, the source electrode 461 , the gate electrode 420 , and the drain electrode 462 may be disposed between the first side part 411 and the second side part 412 .

In addition, as an example, the active layer 410 is the bottom surface of the groove 401H, for example, the surface furthest from the open upper region of the groove 401H (groove 401H with reference to FIGS. 18 and 19 ). A bottom portion 413 may be included in the lower surface of FIG.

As an optional embodiment, the bottom part 413 may be formed to connect the first side part 411 and the second side part 412 .

Also, the bottom portion 413 may extend in one direction to have a length, for example, may be formed along the length direction of the groove 401H of the substrate 401 . As an optional embodiment, the bottom portion 413 may have a length equal to the length of the groove 401H in one direction.

As an optional embodiment, the bottom portion 413 may face the source electrode 461 , the gate electrode 420 , and the drain electrode 462 , for example, the source electrode 461 , the gate electrode 420 and the drain electrode. It may be formed to face the bottom surface of 462 .

Through this, the source electrode 461 , the gate electrode 420 , and the drain electrode 462 may be disposed on the bottom portion 413 .

As an example, the active layer 410 is formed on the bottom portion 413 in a direction crossing the plane direction of the bottom portion 413, specifically, a first side portion 411 and a second side portion extending in a direction orthogonal to each other. 412 , the first side portion 411 and the second side portion 412 may be spaced apart from each other to form a spaced region therebetween.

In addition, as an optional embodiment of the present embodiment, the active layer 410 may include a third side portion 414 and a fourth side portion 415 facing each other.

As an example, the active layer 410 may include a third side surface portion 414 formed to cross the first side surface portion 411 and the second side surface portion 412 in one region of the side surface of the groove 401H. As a specific example, the third side part 414 may be disposed between the first side part 411 and the second side part 412 to be connected to each other.

The third side portion 414 may extend in one direction to have a length, for example, may be formed along the width direction of the groove 401H of the substrate 401 . As an optional embodiment, the third side portion 414 may have a length equal to the width of the groove 401H in one direction.

As an optional embodiment, the third side portion 414 may face the source electrode 461 , for example, may be formed to contact one side surface of the source electrode 461 .

Also, the third side part 414 may be formed to be connected to the bottom part 413 .

As an example, the active layer 410 may include a fourth side part 415 formed to cross the first side part 411 and the second side part 412 in one region of the side surface of the groove 401H. As a specific example, the third side part 414 may be disposed between the first side part 411 and the second side part 412 to be connected to each other.

The fourth side part 415 may be formed to face the third side part 414 , and as an optional embodiment, the fourth side part 415 may be disposed parallel to the third side part 414 .

The fourth side portion 415 may extend in one direction to have a length, for example, may be formed along the width direction of the groove 401H of the substrate 401 . As an optional embodiment, the fourth side portion 415 may have a length equal to the width in one direction of the groove 401H.

As an optional embodiment, the fourth side portion 415 may face the drain electrode 462 , and for example, may be formed to contact one side surface of the drain electrode 462 .

Also, the fourth side part 415 may be formed to be connected to the bottom part 413 .

As a specific example, the first side part 411 , the second side part 412 , the third side part 414 , and the fourth side part 415 are connected to the bottom part 413 and in a direction crossing the bottom part 413 . It may have an extended form to have a height. Through this, the active layer 410 may have a shape similar to a box without a cover having a space therein, and this shape may vary depending on the groove 401H of the substrate 401 .

Although not shown as an optional embodiment, the active layer 410 may include a cover part (not shown) in a region facing the bottom part 413 , and the cover part (not shown) is insulated from the gate electrode 420 and It may be electrically connected to the source electrode 461 and the drain electrode 462 .

The active layer 410 may be formed to contain various materials.

The active layer 410 may contain various semiconductor materials.

In an alternative embodiment, the active layer 410 may contain a 2D material. The two-dimensional material contained in the active layer 410 may include a semiconductor material having a two-dimensional crystal structure, and may have a monolayer or multilayer structure.

In addition, each layer of the two-dimensional material contained in the active layer 410 may have a thickness of an atomic level, and the respective layers may be connected to each other by a Van Der Waals bond. can

In addition, the number of layers of the 2D material included in the active layer 410 may be about 1 to several. However, this is merely exemplary and may include a greater number of layers. In addition, when the two-dimensional material contained in the active layer 410 includes a plurality of layers, the layers may have directionality and may be disposed in parallel with each other, or, as another example, may have an intersecting direction.

The active layer 410 is graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenide (TMDC), transition metal trichalcogenide (TMTC) , metal phosphorous trichalcogenide (MPT), black phosphorus, phosphorene, or molybdenum sulfide.

As an example, the active layer 410 may contain the transition metal chalcogenide having a chemical formula of MX2, wherein M is molybdenum (Mo), tungsten (W), nickel (Ni), titanium (Ti), vanadium transition metal elements such as (V), zirconium (Zr), hafnium (Hf), palladium (Pd), platinum (Pt), niobium (Nb), tantalum (Ta), technetium (Tc), or rhenium (Re) may contain.

And X may contain a chalcogen element such as sulfur (S), selenium (Se), or tellurium (Te).

For example, the active layer 410 may include MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, ZrS2, rSe2, HfS2, HfSe2, NbSe2, ReSe2, or the like.

Also, as another example, the active layer 410 may include SnSe2, GaS, GaSe, GaTe, GeSe, In2Se3, InSnS2, or the like.

As an alternative embodiment, the active layer 410 may be doped with an n-type or p-type dopant, for example, the active layer 410 may be doped with an n-type dopant or a p-type dopant by ion implantation or chemical doping.

The gate electrode 420 may be disposed in each of the two grooves 401H to correspond to each of the device portion 400A and the device portion 400B.

For convenience of description, one of the device portion 400A and the device portion 400B, for example, the gate electrode 420 corresponding to the device portion 400A will be described as a reference.

Also, the gate electrode 420 of the device portion 400A and the gate electrode 420 of the device portion 400B may be formed to be spaced apart from each other.

The gate electrode 420 may be disposed to have a height in the first direction in the groove 401H of the substrate 401 . For example, the gate electrode 420 may have a height in the depth direction (the Z-axis direction of FIGS. 18 and 19 ) of the groove 401H of the substrate 401 .

As a specific example, the gate electrode 420 may have a columnar shape having a height. As shown in the drawing, the gate electrode 420 may be formed so as not to protrude to the outside of the groove 401H, and, for example, may have an upper surface parallel to the plane of the substrate 401 .

Also, although not shown, the height of the gate electrode 420 may be smaller than the depth of the groove 401H.

Also, although not shown, the height of the gate electrode 420 is greater than the depth of the groove 401H, and through this, a region of the upper end of the gate electrode 420 may protrude to the outside of the groove 401H.

The gate electrode 420 may be disposed to be spaced apart from the active layer 410 .

Also, the gate electrode 420 may be formed to overlap at least one region of the active layer 410 .

For example, the gate electrode 420 may be disposed between the first side surface portion 411 and the second side surface portion 412 of the active layer 410 .

As an optional embodiment, a gate insulating layer 430 may be disposed to insulate the gate electrode 420 and the active layer 410 .

For example, the gate insulating layer 430 may include a first gate insulating layer 431 disposed between the gate electrode 420 and the first side surface 412 of the active layer 410 .

Also, the gate insulating layer 430 may include a second gate insulating layer 432 disposed between the gate electrode 420 and the second side surface 412 of the active layer 410 .

Also, the gate insulating layer 430 may include a third gate insulating layer 433 disposed between the gate electrode 420 and the bottom portion 413 of the active layer 410 .

The gate insulating layer 430 may contain various insulating materials, for example, oxide or nitride.

The gate electrode 420 may be formed to apply an electric field to the active layer 410 , for example, a voltage may be applied to the active layer 410 .

The gate electrode 420 may include various materials, and may include a material having high electrical conductivity. For example, the gate electrode 420 may be formed using various metals.

For example, the gate electrode 420 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or may be formed using a nitride of these materials.

The source electrode 461 and the drain electrode 462 may be disposed in each of the two grooves 401H to correspond to each of the device portion 400A and the device portion 400B.

For convenience of description, one of the device portion 400A and the device portion 400B, for example, the source electrode 461 and the drain electrode 462 corresponding to the device portion 400A will be described based on the description.

The source electrode 461 and the drain electrode 462 may be disposed to be spaced apart from the gate electrode 420 .

For example, it may be arranged to have a spaced apart distance from the gate electrode 420 along one direction crossing the height direction of the gate electrode 420 , and specifically, between the source electrode 461 and the drain electrode 462 . A gate electrode 420 may be disposed.

The source electrode 461 and the drain electrode 462 may be disposed in the groove 401H of the substrate 401 and may be formed to have a height in the first direction. For example, the source electrode 461 and the drain electrode 462 may have a height in the depth direction (the Z-axis direction of FIGS. 18 and 19 ) of the groove 401H of the substrate 401 .

As a specific example, the source electrode 461 or the drain electrode 462 may have a columnar shape having a height.

As shown in the drawing, the source electrode 461 or the drain electrode 462 may be formed so as not to protrude outside the groove 401H, and, for example, have an upper surface parallel to the plane of the substrate 401. can

Also, although not shown, the height of the source electrode 461 or the drain electrode 462 may be smaller than the depth of the groove 401H.

Also, although not shown, the height of the source electrode 461 or the drain electrode 462 is greater than the depth of the groove 401H, and through this, a region of the upper end of the gate electrode 420 may protrude to the outside of the groove 401H. have.

The source electrode 461 and the drain electrode 462 may be electrically connected to the active layer 410 and, for example, may be in contact with each other.

For example, the source electrode 461 and the drain electrode 462 are disposed between the first side part 411 and the second side part 412 of the active layer 410 , and specifically, the first side part 411 and the second side part 411 . It may be disposed to be in contact with the second side portion 412 .

In addition, each of the source electrode 461 and the drain electrode 462 faces the third side part 414 or the fourth side part 415 of the active layer 410 , and the third side part 414 or the fourth side part 415 , respectively. ) can be placed in contact with For example, among the side surfaces of the source electrode 461 , a side opposite to the side facing the gate electrode 420 is in contact with the third side surface portion 414 , and one of the side surfaces of the drain electrode 462 is opposite to the side facing the gate electrode 420 . The surface may be formed to be in contact with the fourth side part 415 .

As an optional embodiment, the source electrode 461 and the drain electrode 462 may be disposed on the bottom portion 413 of the active layer 410, for example, the source electrode 461 and the drain electrode 462 are the active layer ( It may be disposed to be in contact with the bottom portion 413 of the 410 .

The source electrode 461 and the drain electrode 462 may be formed using various conductive materials.

For example, the source electrode 461 and the drain electrode 462 may contain various types of metals.

As an example, the source electrode 461 and the drain electrode 462 may include tungsten (W), copper (Cu), gold (Au), silver (Ag), titanium (Ti), tantalum (Ta), ruthenium (Ru), Or it may include cobalt (Co).

As another example, the source electrode 461 and the drain electrode 462 may contain various types of metal nitrides, and specifically, for example, titanium nitride (TiN), tantalum nitride (TaN), cobalt nitride (CoN), Alternatively, it may include tungsten nitride (WN).

In an optional embodiment, one or more spacers 440 may be disposed between the gate electrode 420 and the source electrode 461 and between the gate electrode 420 and the drain electrode 462 .

For example, the two spacers 440 may be formed to be adjacent to the gate electrode 420 , and as a specific example, may be formed to be in contact with the gate electrode 420 .

As an optional embodiment, the spacer 440 may be disposed in contact with the active layer 410, for example, may be disposed between the first side portion 411 and the second side portion 412 of the active layer 410, As a specific example, it may be formed to contact the first side part 411 and the second side part 412 .

In addition, the spacer 440 may be formed on the bottom portion 413 of the active layer 410 , for example, to be in contact with the bottom portion 413 .

As an optional embodiment, the spacer 440 may be disposed to contact the gate insulating layer 430 .

The spacer 440 may include an insulating material, may be formed using various types of organic materials, or may contain an inorganic material as another example.

The gate electrode 420 , the source electrode 461 , and the drain electrode 462 may be insulated through the spacer 440 .

In addition, stable disposition of the gate electrode 420 , the source electrode 461 , and the drain electrode 462 may be easily implemented, and durability of the electronic device 400 may be improved.

The electronic device of the present embodiment may include a plurality of device parts. Each of the plurality of device parts may be formed in a groove disposed to be spaced apart from each other on the substrate. Each of the plurality of device portions corresponding to each groove may include a gate electrode, a source electrode, and a drain electrode having a height. An active layer may be formed to correspond to one side of the gate electrode, the source electrode, and the drain electrode having such a height.

In this case, the groove may be formed so that the side surface is surrounded by the material of the substrate, and the active layer may be formed to correspond to the side surface of the groove and may be formed to correspond to the bottom surface of the groove.

Through this, the active layer may have a shape similar to a groove having a space therein. A source electrode and a drain electrode may be formed on the active layer to be electrically connected to or directly in contact with the bottom and side portions of the active layer.

In addition, as an optional embodiment, the active layer may be formed to contain a two-dimensional material, thereby increasing the speed of the flow of current between the source electrode and the drain electrode through the active layer while easily forming the thickness of the active layer into a thin film. It is possible to implement an electronic device capable of precise control.

Through this, when forming a three-dimensional electronic device corresponding to the grooves formed to be distinguished from each other, for example, a vertical electronic device, specifically, a vertical field effect transistor, the speed of current flow and the effect of improving current characteristics will be increased. can

As a result, it is possible to easily implement an electronic device having improved electrical characteristics and improved integration.

As such, the present invention has been described with reference to the embodiments shown in the drawings, which are merely exemplary, and those of ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Accordingly, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

The specific implementations described in the embodiment are only embodiments, and do not limit the scope of the embodiment in any way. In addition, unless there is a specific reference such as "essential", "importantly", etc., it may not be a necessary component for the application of the present invention.

In the specification of the embodiments (especially in the claims), the use of the term “above” and similar referential terms may be used in both the singular and the plural. In addition, when a range is described in the embodiment, it includes the invention to which individual values belonging to the range are applied (unless there is a description to the contrary), and each individual value constituting the range is described in the detailed description. . Finally, the steps constituting the method according to the embodiment may be performed in an appropriate order unless the order is explicitly stated or there is no description to the contrary. The embodiments are not necessarily limited according to the order of description of the above steps. The use of all examples or exemplary terms (eg, etc.) in the embodiment is merely for describing the embodiment in detail, and unless it is limited by the claims, the scope of the embodiment is limited by the examples or exemplary terminology. it is not In addition, those skilled in the art will recognize that various modifications, combinations, and changes can be made in accordance with design conditions and factors within the scope of the appended claims or their equivalents.

100, 200, 300, 400: electronic device
110, 210, 310, 410: active layer
120, 220, 320, 420: gate electrode
161, 261, 361, 461: source electrode
162, 262, 362, 462: drain electrode

Claims (10)

a substrate on which a groove is formed;
a gate electrode disposed in the groove and formed to have a height in a first direction;
a source electrode disposed in the groove, spaced apart from the gate electrode in a direction crossing the first direction, and formed to face one surface of the gate electrode;
a drain electrode disposed in the groove, spaced apart from the gate electrode in a direction crossing the first direction, and formed to face the other surface of the gate electrode;
It includes a region overlapping the gate electrode, is electrically connected to the source electrode and the drain electrode, is formed to be in contact with at least one side surface of the source electrode and the drain electrode, and has a side portion disposed to correspond to a wall surface of the groove; An active layer formed to
wherein the active layer contains a two-dimensional material. According to claim 1,
and the active layer includes a bottom portion formed in a direction crossing the side surface portion. delete According to claim 1,
The electronic device is provided with a plurality of grooves. delete A method of manufacturing an electronic device comprising a gate electrode, a source electrode, a drain electrode and an active layer, the method comprising:
Prepare a substrate having a groove formed thereon,
the gate electrode is disposed in the groove to have a height in a first direction;
The source electrode is disposed in the groove, is spaced apart from the gate electrode in a direction crossing the first direction, and is formed to face one surface of the gate electrode;
The drain electrode is disposed in the groove, is spaced apart from the gate electrode in a direction crossing the first direction, and is formed to face the other surface of the gate electrode;
The active layer includes a region overlapping the gate electrode, is electrically connected to the source electrode and the drain electrode, is formed to be in contact with at least one side surface of the gate electrode, the source electrode, and the drain electrode, and corresponds to the wall surface of the groove. Including forming to have a side portion to be disposed,
In the forming of the active layer, the active layer is formed to contain a two-dimensional material. 7. The method of claim 6,
The forming of the active layer may further include forming a bottom portion in a direction crossing the side portion. delete 7. The method of claim 6,
The step of forming the groove,
and forming a plurality of grooves on the substrate to be spaced apart from each other. delete

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