KR102334526B1 - Organic light emitting display device and method of fabricating thereof - Google Patents

Abstract

In the organic light emitting display device of the present invention, the color filter layer formed in the pixel is disposed on the thin film transistor to partially absorb the light incident on the thin film transistor, thereby preventing deterioration of the characteristics of the thin film transistor due to light irradiation. The color filter layer disposed thereon is preferably an R-color filter layer that absorbs a short wavelength.

Description

Organic electroluminescent display device {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THEREOF}

The present invention relates to an organic light emitting display device and a manufacturing method thereof, and more particularly, to an organic light emitting display device capable of simplifying a manufacturing process and preventing defects due to a step difference.

Recently, since the development of an organic electroluminescent device using poly(p-phenyllinevinyline) (PPV), which is one of the conjugated polymers, research on organic materials such as conductive conjugated polymers has been actively conducted. . Research for applying these organic materials to thin film transistors, sensors, lasers, and photoelectric devices is also ongoing, and among them, research on organic light emitting display devices is being conducted most actively.

In the case of an electroluminescent device made of phosphors-based inorganic materials, an operating voltage of 200V or higher is required and the manufacturing process of the device is made by vacuum deposition. have. However, the electroluminescent device made of organic material has the advantages of excellent luminous efficiency, facilitation of large area, simplicity of process, and in particular, the advantage of easily obtaining blue light emission. It is in the spotlight as a display device.

Currently, an active matrix organic light emitting display device having an active driving device in each pixel like a liquid crystal display device is being actively studied as a flat panel display device.

However, the organic light emitting display device as described above has the following disadvantages. Each pixel of the organic light emitting display device is provided with a thin film transistor as an active driving device. The thin film transistor has a semiconductor layer, and as a scan signal is applied to the gate electrode, a channel layer is formed on the semiconductor layer, and the organic light emitting display device is driven by applying a signal to the pixel through the channel layer.

However, in the case of the organic light emitting display device as described above, when light is incident from the outside, the semiconductor layer is activated by light energy to generate a leakage current in the semiconductor layer of the thin film transistor, and as a result, the characteristics of the thin film transistor This decreases and the organic electroluminescence display device becomes defective.

The present invention has been made in view of the above, and by providing a color filter layer absorbing short-wavelength light on the upper part of the thin film transistor, it is possible to prevent deterioration of the characteristics of the thin film transistor by light irradiation. aim to do

Another object of the present invention is to provide an organic light emitting display device capable of preventing a pixel electrode from being disconnected by a color filter layer absorbing a short wavelength.

In order to achieve the above object, in the organic light emitting display device according to the present invention, the color filter layer formed in the pixel is disposed on the thin film transistor, and the light incident on the thin film transistor is partially absorbed by light irradiation. Characteristics of the thin film transistor prevent degradation. In this case, the color filter layer disposed on the thin film transistor is preferably an R-color filter layer that absorbs a short wavelength.

A G-color filter layer or B-color filter layer is disposed on the upper and side surfaces of the R-color filter layer to cover the end of the R-color filter layer, and the G-color filter layer and the B-color filter layer have a resin content higher than that of the R-color filter layer. Since this is high, the adhesive strength with the lower insulating layer is good, and thus it is possible to remove the lifting phenomenon occurring between the R-color filter layer and the insulating layer, thereby preventing the occurrence of disconnection in the pixel electrode.

In the present invention, since the color filter layer is extended above the thin film transistor, the following effects can be obtained.

First, in the present invention, since the R-color filter layer that absorbs a short wavelength of high energy is disposed on the thin film transistor, the semiconductor layer of the thin film transistor is activated by light irradiation, so that it is possible to prevent deterioration of the optical properties of the thin film transistor. .

Second, in the present invention, a G-color filter layer or B-color filter layer with a high resin content is arranged to cover the lifting area between the end of the R-color filter layer and the insulating layer, thereby preventing the disconnection of the pixel electrode due to the lifting of the R-color filter layer. can be prevented

Third, in the present invention, in order to prevent a lifting phenomenon between the end of the R-color filter layer and the insulating layer, a G-color filter layer or B-color filter layer disposed in the B and G pixels without a separate overcoat layer is provided. Therefore, it is possible to prevent additional process addition or cost increase.

1 is a view showing an equivalent circuit diagram of an organic light emitting display device according to the present invention.
2 is a plan view of an organic light emitting display device according to the present invention.
3 is a cross-sectional view showing the structure of an organic light emitting display device according to the present invention.
4 is a partial enlarged view of area A of FIG. 3 ;
5 is a diagram illustrating disconnection of a pixel electrode when only an R-color filter layer is disposed on a thin film transistor;
6A to 6F are views illustrating a method of manufacturing an organic light emitting display device according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is an equivalent circuit diagram of an organic light emitting display device according to the present invention. As shown in FIG. 1 , the organic light emitting display device 101 includes a plurality of pixels defined by gate lines G and data lines D crossing vertically and horizontally, and a power line in each pixel. (P) is arranged parallel to the data line (D).

A switching thin film transistor (Ts), a driving thin film transistor (Td), a capacitor (C), and an organic light emitting device (E) are provided inside each pixel. The gate electrode G1 of the switching thin film transistor Ts is connected to the gate line G, the source electrode S1 is connected to the data line D, and the drain electrode D1 is the driving thin film transistor Td. ) is connected to the gate electrode G2. In addition, the source electrode S2 of the driving transistor Td is connected to the power line P, and the drain electrode D2 is connected to the light emitting device E. As shown in FIG.

In the organic light emitting display device having this configuration, when a scan signal is input through the gate line G, the signal is applied to the gate electrode G1 of the switching thin film transistor Ts to drive the switching thin film transistor Ts. As the switching thin film transistor Ts is driven, a data signal input through the data line D is input to the gate electrode G2 of the driving thin film transistor Td through the source electrode S1 and the drain electrode D1. Thus, the driving thin film transistor Td is driven.

At this time, a current flows in the power line P, and as the driving thin film transistor Td is driven, the current of the power line P passes through the source electrode S2 and the drain electrode D2 to the light emitting device E is authorized to At this time, the current output through the driving thin film transistor Td varies in magnitude according to the voltage between the gate electrode G2 and the drain electrode D2.

The light emitting device E is an organic light emitting device and emits light as a current is input through the driving thin film transistor Td to display an image. At this time, since the intensity of the emitted light varies according to the intensity of the applied current, the intensity of the light can be adjusted by adjusting the intensity of the current.

2 is a plan view showing a specific structure of an actual organic light emitting display device of the present invention. The organic light emitting display device of the present invention consists of R, G, B, and W pixels, and these four pixels are shown in the drawing. However, the organic light emitting display device of the present invention may consist of only R, G, and B pixels.

As shown in FIG. 2 , the organic light emitting display device according to the present invention includes a switching device Ts and a driving device Td for each of a plurality of pixels defined on the first substrate 110 , in which case the characteristics of operation Accordingly, each of the switching element Ts or the driving element Td may be composed of a combination of one or more thin film transistors. In addition, on the substrate 10 , a gate line 102 and a data line 103 cross each other to define a pixel.

The driving device Td includes a thin film transistor including a gate electrode 111 , a semiconductor layer 112 , a source electrode 114 , and a drain electrode 115R. At this time, the drain electrode of the switching element Ts is connected to the gate electrode of the driving element Td through a contact hole, and the drain electrode 114 of the driving element Td is connected to the pixel electrode 120 . .

Although not shown in the drawings, an organic light emitting layer and a common electrode are sequentially formed on the pixel electrode 120 of the pixel, and as a current is applied through the pixel electrode 120 , the organic light emitting layer emits light to realize an image.

Color filter layers 131R, 131G, and 131B are respectively disposed under the organic emission layer of the R, G, and B pixels, and the light emitted from the organic emission layer passes through the color filter layers 131R, 131G, and 131B to emit light of a specific color. will output In this case, the color filter layers 131R, 131G, and 131B are not only disposed on the display areas of the R, G, and B pixels in which an actual image is realized, but are also disposed on the thin film transistor. As such, disposing the color filter layers 131R, 131G, and 131B on the thin film transistor is to block light incident to the thin film transistor from the outside.

In general, when light is incident on the semiconductor layer 112 of the thin film transistor, the semiconductor layer 112 is activated by light energy to form a channel inside the semiconductor layer 112, and the channel causes leakage current to the thin film transistor. This leakage current deteriorates the electrical characteristics of the thin film transistor and causes defects in the organic light emitting display device.

In the present invention, the color filter layers 131R, 131G, and 131B are formed on the thin film transistor to block light from being incident on the semiconductor layer 112 of the thin film transistor. In general, the color filter layers 131R, 131G, and 131B selectively transmit incident light instead of completely blocking the incident light. In other words, the color filter layers 131R, 131G, and 131B do not completely block the light incident on the semiconductor layer 112 of the thin film transistor, but only partially block it.

The best way to completely block the light incident on the semiconductor layer 112 of the thin film transistor is to arrange a material that can completely block the light, for example, black resin or an opaque metal layer on the thin film transistor. However, when the black resin or metal layer is provided, since a separate layer is added, a manufacturing process is added and manufacturing cost is increased.

In the present invention, instead of adding a separate layer, by arranging the color filter layers 131R, 131G, and 131B on the thin film transistor, leakage current is prevented from occurring in the thin film transistor, and the manufacturing process is added and manufacturing cost is increased. it can be prevented

Meanwhile, the color filter layer on the thin film transistor disposed in each pixel may be formed of the color filter layer of the corresponding pixel. That is, the R-color filter layer 131R is disposed on the R-pixel thin film transistor, the G-color filter layer 131G is disposed on the G-pixel thin film transistor, and the B-color filter layer 131B is disposed on the B-pixel thin film transistor. ) can be placed.

In addition, the same color filter layer may be formed on all thin film transistors disposed in the R, G, and B pixels. That is, the thin film transistors can be protected by extending one of the color filter layers 131R, 131G, and 131B disposed in the R, G, and B pixels to the region where all the thin film transistors and the gate line are formed.

In the present invention, the R-color filter layer is disposed on the entire thin film transistor to protect the thin film transistor. This is because the R-color filter layer absorbs short-wavelength green light and blue light and transmits long-wavelength red light. That is, it is possible to minimize the effect of light irradiation by blocking green light and blue light of relatively high energy and allowing only red light of low energy to be incident on the semiconductor layer of the thin film transistor.

Although the R-color filter layer does not completely block the light incident on the semiconductor layer of the thin film transistor, it blocks the light in the wavelength band with high energy and transmits only the light in the wavelength band with low energy to minimize the effect of light. At the same time, it is possible to avoid adding manufacturing processes and increasing manufacturing costs.

Meanwhile, another color filter layer may be disposed under the R-color filter layer 131R disposed on the thin film transistor. This structure will be described in more detail with reference to the cross-sectional view of the present invention.

FIG. 3 is a cross-sectional view taken along line II′ of FIG. 2 . As shown in FIG. 2 , in the organic light emitting display device according to the present invention, numerous R, G, B, and W pixels are repeatedly arranged. only explain

As shown in FIG. 3 , a light blocking layer 121 and a buffer layer 122 are formed on the substrate 110 made of a transparent material such as a glass substrate or plastic, and a driving thin film transistor is provided in the display area on the buffer layer 122 . is formed

The driving thin film transistors are respectively formed in R, G, B, and W pixel regions, and the driving thin film transistor includes a semiconductor layer 112 formed in the R, G, B, and W pixel regions on the buffer layer 122 and the semiconductor layer A first insulating layer 123 formed over the entire substrate 110 on which 112 is formed, a gate electrode 111 formed on the first insulating layer 123, and a substrate ( 110) A second insulating layer 124 formed throughout, and a source electrode 114 contacting the semiconductor layer 112 through a contact hole formed in the first insulating layer 123 and the second insulating layer 124. and a drain electrode 115 .

The light-blocking layer 121 is to prevent the characteristics of the driving thin film transistor from being changed due to light incident on the driving thin film transistor, and may be formed of black resin or an opaque metal.

The buffer layer 122 may be formed of a single layer or a plurality of layers, and the semiconductor layer 112 may be formed of a transparent oxide semiconductor such as crystalline silicon or IGZO (Indium Gallium Zinc Oxide). It is made of doped layers on both sides so that the source electrode 114 and the drain electrode 115 are in contact with the doped layer.

The gate electrode 111 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al or Al alloy, and the first insulating layer 123 and the second insulating layer 124 are SiO ₂ or SiNx It may be made of a single layer made of an inorganic insulating material such as SiO ₂ and a double layer made of SiNx. In addition, the source electrode 114 and the drain electrode 115 may be formed of Cr, Mo, Ta, Cu, Ti, Al, or an Al alloy.

A third insulating layer 126 is formed on the substrate 110 on which the driving thin film transistor is formed. The third insulating layer 126 may be formed of an inorganic insulating material such as _{SiO 2 .}

Although not shown in the drawings, a gate pad for applying a scan signal to the gate electrode 111 of the driving thin film transistor and a data pad for applying a signal to the pixel electrode are formed in the outer region of the display area including a plurality of pixels.

The color filter layer 131R is disposed on the third insulating layer 126 of the pixel region, and the color filter layer 131R is also disposed on the third insulating layer 126 above the thin film transistor. At this time, the G-color filter layer 131G and the B-color filter layer 131B are respectively disposed on the third insulating layer 126 of the G-pixel and the B-pixel, but on the upper portion of the thin film transistor of the G-pixel and the B-pixel. An R-color filter layer 131R is disposed.

Meanwhile, a G-color filter layer 131G and a B-color filter layer 131B are disposed on the outer region of the R-color filter layer 131R disposed on the thin film transistor.

FIG. 4 is a partially enlarged view of area A of FIG. 3 . As shown in FIG. 4 , an R-th color filter layer 131R is disposed on the third insulating layer 126 on which the thin film transistor is disposed, and B-color is disposed on the outer region of the R-color filter layer 131R. A filter layer 131B or a G-color filter layer 131G is disposed.

In addition, the pixel electrode 120 is disposed on the R-color filter layer 131R and the B-color filter layer 131B, and the bank layer 128 and the organic light emitting part 125 are disposed thereon, and on the organic light emitting part. A common electrode 130 is disposed. As described above, in the present invention, the B-color filter layer 131B or the G-color filter layer 131G is disposed in the outer regions of the side and upper surfaces of the R-color filter layer 131R of the R-color filter layer 131R. As follows.

5 is a diagram illustrating a structure in which only the R-color filter layer 131R is disposed on the thin film transistor and the B-color filter layer 131B or the G-color filter layer 131G is not disposed.

As shown in FIG. 5 , when only the R-color filter layer 131R is disposed on the thin film transistor, the pixel electrode 120 extends directly over the R-color filter layer 131R when the third insulating layer 126 is disposed. .

In general, the color resin of the color filter layer is formed by containing a pigment in the resin. In order to improve optical properties, the R-color resin has a higher pigment content than the B-color resin and the G-color resin. Therefore, the R-color resin has a relatively low content of resin compared to the B-color resin and the G-color resin. The adhesion of the R-color filter layer 131R to the lower third insulating layer 126 is reduced.

Therefore, as shown in FIG. 5 , when the R-color filter layer 131R is disposed on the third insulating layer 126, the end region of the R-color filter layer 131R is formed with the third insulating layer ( 126), and a lifting phenomenon that does not adhere to it occurs. Due to this lifting phenomenon, the pixel electrode 120 disposed on the third insulating layer 126 and the R-color filter layer 131R is disconnected at the end region of the R-color filter layer 131R. As a result, the corresponding pixel The image signal is not applied to , and a defect occurs in which the corresponding pixel becomes a dark point.

The best way to prevent disconnection of the pixel electrode 120 due to the lifting phenomenon between the R-color filter layer 131R and the third insulating layer 126 is to cover the R-color filter layer 131R, especially the lifting. An insulating layer is laminated to cover the end region where this occurs. As described above, since a separate insulating layer is disposed on the R-color filter layer 131R and the third insulating layer 126 in the region where the lifting phenomenon occurs due to the provision of the separate insulating layer, the pixel electrode 120 is lifted. Since the R-color filter layer 131R and the third insulating layer 126 are disposed on a separate insulating layer in the region where this occurs, disconnection of the pixel electrode 120 due to the lifting phenomenon can be prevented. .

However, since a process is added to form such a separate insulating layer, the manufacturing process becomes complicated and manufacturing cost increases.

In the present invention, the R-color filter layer ( When the end portion of the 131R and the boundary region of the third insulating layer 126 are covered, it is possible to prevent disconnection of the pixel electrode 120 due to the lifting phenomenon of the R-color filter layer 131R.

As described above, since the resin content of the B-color filter layer 131B or the G-color filter layer 131G is higher than that of the R-color filter layer 131R, the B-color filter layer 131B or the G-color filter layer 131G ) has a relatively high adhesive strength of the lower third insulating layer 126 , and thus no lifting phenomenon occurs. Accordingly, the B-color filter layer 131B or the G-color filter layer 131G is disposed in the end region on the R-color filter layer 131R, and the pixel electrode 120 is formed with the B-color filter layer 131B or the G-color filter layer 131B. Disconnection of the pixel electrode 120 can be prevented by disposing it on the filter layer 131G.

In addition, since the B-color filter layer 131B and the G-color filter layer 131G are formed when the color filter layer is formed on the B-pixel and the G-pixel, a separate process is not added. won't happen

The pixel electrode 120 is disposed on the third insulating layer 126 , the R-color filter layer 131R, and the B-color filter layer 131B (or the G-color filter layer 131G), and is formed in each of the pixel regions. A contact hole 129 is formed in the third insulating layer 126 on the drain electrode 115 of the thin film transistor, and the pixel electrode 120 is connected to the drain electrode 115 of the driving thin film transistor through the contact hole 129. electrically connected. The pixel electrode 120 is made of a transparent metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

A bank layer 128 is formed in the pixel region and the upper region of the thin film transistor. The bank layer 128 is a type of barrier rib, which divides each pixel area and prevents the light of a specific color output from the adjacent pixel area from being mixed and output. In addition, since the bank layer 128 fills a part of the contact hole 129 , the step difference is reduced, and as a result, defects in the organic light emitting part due to the excessive step difference are prevented when the organic light emitting part is formed.

An organic light emitting unit 125 is disposed between the bank layer 128 on the pixel electrode 120 . The organic light emitting unit 125 is formed of a white organic light emitting layer emitting white light. Although not shown in the drawings, the white organic light emitting layer may be formed by mixing a plurality of organic materials emitting R, G, and B monochromatic light respectively, or by stacking a plurality of light emitting layers each emitting R, G and B monochromatic light. can

A common electrode 130 is formed on the organic light emitting part 125 of the display area. The common electrode 130 is made of a metal such as Ca, Ba, Mg, Al, Ag.

At this time, when the pixel electrode 120 is a cathode of the organic light emitting unit 125 and the common electrode 130 is an anode, voltage is applied to the common electrode 130 and the pixel electrode 120, Electrons from the pixel electrode 120 are injected into the organic light emitting unit 125 and holes are injected from the common electrode 130 into the organic light emitting unit 125, and excitons are generated in the organic light emitting layer, and this As the excitons decay, light corresponding to the energy difference between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) of the light emitting layer is generated to the outside (the lower direction of the common electrode 130 in the drawing). will go out

A second protective layer 141 is formed over the entire substrate 110 on the outer region and the third insulating layer 126 of the display region, and on the pixel electrode 130 and the bank layer 128 . The second protective layer 141 is formed of an inorganic material such as _{SiO 2 or SiNx.}

In addition, an organic layer 143 made of an organic material such as a polymer is formed on the second passivation layer 141 , and a third passivation layer 144 made of an inorganic material such as _{SiO 2 or SiNx is formed thereon.}

An adhesive is applied on the third protective layer 144 to form an adhesive layer 146 , a second substrate 148 is disposed thereon, and the second substrate 148 is attached thereto by the adhesive layer 146 .

As the adhesive, any material may be used as long as it has good adhesion and good heat resistance and water resistance, but in the present invention, thermosetting resins such as epoxy-based compounds, acrylate-based compounds or acrylic rubbers are mainly used. At this time, the adhesive layer 146 is applied to a thickness of about 5-100 μm, and is cured at a temperature of about 80-170 degrees. In addition, a photocurable resin may be used as the adhesive, and in this case, the adhesive layer 146 is cured by irradiating the adhesive layer with light such as ultraviolet rays.

The adhesive layer 146 not only bonds the substrates 110 and 148 together, but also serves as an encapsulant for preventing moisture from penetrating into the organic light emitting display device. is expressed as an adhesive, but this is for convenience, and this adhesive layer may be expressed as an encapsulant.

The second substrate 148 may be made of a transparent material such as glass or plastic, and may be made of a protective film such as a polystyrene (PS) film, polyethylene (PE) film, polyethylene naphthalate (PEN) film, or polyimide (PI) film. have.

A polarizing plate 149 may be attached to the upper portion of the protective film 148 . The polarizing plate 149 transmits light emitted from the organic light emitting display device and does not reflect light incident from the outside, thereby improving image quality.

Hereinafter, a method for manufacturing the organic light emitting display device having the above structure will be described.

6A to 6H are views illustrating a method of manufacturing an organic light emitting display device according to the present invention.

First, as shown in FIG. 6A, black resin is laminated and patterned on the first substrate 110 made of glass or plastic material to form a light blocking film 121 in the area where the thin film transistor is to be placed, and then the first substrate ( 110) A buffer layer 122 made of an inorganic material or the like is formed over the entire surface. In this case, the buffer layer 122 may be formed as a single layer or a plurality of layers. Then, a transparent oxide semiconductor or crystalline silicon is deposited over the entire substrate 110 by a CVD method and then etched to form a semiconductor layer 112 on the buffer layer 122 . In this case, the crystalline silicon layer may be formed by laminating crystalline silicon, or may be formed by laminating amorphous silicon and then crystallizing the amorphous material by various crystallization methods such as laser crystallization. Both sides of the crystalline silicon ^{layer are doped with n +} or p ⁺ type impurities to form a doped layer.

Thereafter, a first insulating layer 123 is formed by laminating an inorganic insulating material such as _{SiO 2} or SiOx by CVD (Chemical Vapor Deposition) on the semiconductor layer 112, and then Cr, Mo, Ta, A gate electrode 111 is formed in each pixel area of the display area by stacking an opaque metal with good conductivity such as Cu, Ti, Al or Al alloy by a sputtering process and etching by a photolithography process. to form Next, an inorganic insulating material is deposited over the entire substrate 110 on which the gate electrode 111 is formed by CVD to form a second insulating layer 124 .

Next, the first insulating layer 123 and the second insulating layer 124 are etched to form a contact hole through which the semiconductor layer is exposed, and then Cr, Mo, Ta, Cu, Ti, A source electrode 114 and a drain electrode 115 electrically connected to the semiconductor layer 112 through a contact hole in the display area by laminating an opaque metal having good conductivity such as Al or Al alloy by sputtering and etching to form

Next, as shown in FIG. 6B , a third insulating layer 126 is formed by laminating an inorganic insulating material over the entire substrate 110 on which the source electrode 114 and the drain electrode 115 and the pad 117 are formed. Formed and partially etched to form a contact hole 129 through which the drain electrode 115 of the thin film transistor is exposed to the outside. In this case, the third insulating layer 126 may be formed by laminating _{SiNx or SiO 2 .}

After that, an R-color filter layer 131R is formed by laminating R-color resin on the thin film transistor and on the pixel, respectively, and then the side (the side adjacent to the thin film transistor) and the upper portion of the R-color filter layer 131R of the pixel A B-color filter layer 131B or a G-color filter layer 131G is formed in a partial area.

The color filter layers 131R, 131B, and 131G of the R, G, and B pixels are formed by stacking R-color resin on the R pixels in a state in which the G and B pixels are blocked, and then applying the R-color resin to the G pixels in a state in which the R, B pixels are blocked. It is formed by laminating a G-color resin and then laminating the B-color resin to the B pixel in a state where the R and G pixels are blocked.

The B-color filter layer 131B or the G-color filter layer 131G disposed on the side and upper partial regions of the R-color filter layer 131R is simultaneously formed when the color filter layer of the corresponding pixel is formed.

Thereafter, a transparent conductive material such as ITO or IZO is deposited over the entire substrate 110 and etched to form the pixel electrode 120 on the third insulating layer 126 and the R-color filter layer 131R. In this case, the pixel electrode 120 is electrically connected to the drain electrode 115 of the driving thin film transistor through the contact hole 129 formed in the third insulating layer 126 .

Next, as shown in FIG. 6C , a bank layer 128 is formed. The bank layer 128 divides each pixel, prevents light of a specific color output from adjacent pixels from being mixed and output, and fills a part of the contact hole 129 to reduce a step difference. In this case, the bank layer 128 is formed by stacking an organic insulating material and then etching. However, it may be formed by stacking and etching an inorganic insulating material using a CVD method.

Thereafter, an organic light emitting part 125 is formed on the pixel electrode 120 between the bank layer 128 and a metal such as Al, Ag, Mg, etc. is sputtered on the bank layer 128 and the organic light emitting part 125 . stacked and etched to form the common electrode 130 . In this case, the common electrode 130 may be formed by stacking and etching a transparent conductive material such as ITO or IZO instead of a metal.

The organic light emitting unit 125 may have a multi-layer structure such as an organic light emitting layer, an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

Thereafter, as shown in FIG. 6D , an inorganic material is stacked on the common electrode 130 and on the bank layer 128 to form a first protective layer 141 .

Next, as shown in FIG. 6E , an organic layer 142 is formed by laminating an organic material such as a polymer on the first protective layer 141 . In this case, the organic layer 142 is formed by a screen printing method. That is, although not shown in the drawings, the organic layer 142 is formed by placing a screen on the substrate 110 and filling the screen with polymer, and then applying pressure using a doctor blade or roll. The organic layer 142 is formed to a thickness of about 8-10 μm. Next, a second protective layer 144 is formed on the organic layer 142 by laminating an inorganic material such as ^{SiO 2 or SiOx on the organic layer 142 .}

Thereafter, as shown in FIG. 6F , an adhesive is laminated on the second protective layer 144 to form an adhesive layer 146 , a protective film 148 is placed thereon, and pressure is applied to the second substrate 148 . ) is attached. In this case, the adhesive may be a thermosetting resin or a photocurable resin. When a thermosetting resin is used, heat is applied after adhesion of the second substrate 148 , and when a photocurable resin is used, the adhesive layer 146 is cured by irradiating light after adhesion of the second film 148 .

Next, a polarizing plate 149 is attached on the second film 148 to form an organic light emitting display panel.

As described above, in the present invention, by arranging the R-color filter layer on the thin film transistor to minimize the energy of light irradiated to the thin film transistor without forming a separate light blocking layer, deterioration of the electrical characteristics of the thin film transistor can be prevented. In addition, in the present invention, by disposing the B-color filter layer or the G-color filter layer on a part of the side surface and the upper surface of the R-color filter layer, it is possible to prevent disconnection of the pixel electrode due to the lifting between the R-color filter and the insulating layer.

Meanwhile, although an organic light emitting display device having a specific structure is disclosed in the above detailed description, the present invention is not limited to the organic light emitting display device having a specific structure. For example, in the detailed description, the B-color filter layer or the G-color filter layer is disposed on the side and upper partial regions of the R-color filter layer of the pixel, but the B-color filter layer and G on the side and upper partial regions of the R-color filter layer - It is also possible to arrange two layers of color filter layers.

In other words, in the detailed description, the structure of the driving thin film transistor, the electrode structure, and the structure of the organic light emitting part are disclosed as specific structures, but the present invention is not limited to this specific structure, but is applied to various structures.

110: substrate 120: pixel electrode
122: buffer layer 123,124,126: insulating layer
125: organic light emitting unit 128: bank layer
130: common electrode 131R, 131G, 131B: color filter layer
141,144: protective layer

Claims (6)

a substrate including a plurality of R, G, and B pixels;
a thin film transistor disposed on each of the R, G, and B pixels of the substrate;
a first insulating layer disposed over the entire substrate on which the thin film transistor is disposed;
an R-color filter layer disposed on the R pixel on the first insulating layer and thin film transistors provided in the R, G, and B pixels;
a B-color filter layer and a G-color filter layer, at least one of which covers a boundary region between an end of the R-color filter layer above the thin film transistor provided in the R, G, and B pixels and the first insulating layer;
a pixel electrode disposed on the B-color filter layer and the G-color filter layer;
an organic light emitting unit provided on the pixel electrode; and
An organic light emitting display device including a common electrode provided on the organic light emitting unit. According to claim 1, wherein the thin film transistor,
a semiconductor layer disposed over the substrate;
a second insulating layer disposed on the semiconductor layer;
a gate electrode disposed on the second insulating layer;
a third insulating layer disposed on the gate electrode; and
An organic light emitting display device including a source electrode and a drain electrode disposed on the third insulating layer. The organic light emitting display device according to claim 2, further comprising a light blocking film disposed under the thin film transistor. The organic light emitting display device of claim 1 , wherein a W pixel is additionally disposed on the substrate. a substrate including a plurality of 1-3 pixels;
a thin film transistor disposed on each of the 1-3 pixels of the substrate;
an insulating layer disposed over the entire substrate on which the thin film transistor is disposed;
a first color filter layer made of a color resin and disposed on the corresponding first pixel and the thin film transistor on the insulating layer;
a second color filter layer and a third color filter layer formed of a color resin having a resin content higher than that of the first color filter layer and disposed in the second pixel and the third pixel, respectively;
a pixel electrode disposed on the second color filter layer and the third color filter layer;
an organic light emitting unit provided on the pixel electrode;
Consists of a common electrode provided on the organic light emitting unit,
The first color filter layer extends over the thin film transistors disposed in pixels 1-3, and at least one of a second color filter layer and a third color filter layer is disposed in a boundary region between an end of the first color filter layer on the upper part of the thin film transistor and the insulating layer. organic light emitting display device. The organic electroluminescent display device according to claim 5, wherein the first color filter layer is an R-color filter layer, the second color filter layer is a G-color filter layer, and the third color filter layer is a B-color filter layer.

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