KR102331574B9 - 노출 시간 조절이 가능한 tdi 이미지 센서 및 이를 포함하는 검사 시스템 - Google Patents

노출 시간 조절이 가능한 tdi 이미지 센서 및 이를 포함하는 검사 시스템

Info

Publication number
KR102331574B9
KR102331574B9 KR1020200067932A KR20200067932A KR102331574B9 KR 102331574 B9 KR102331574 B9 KR 102331574B9 KR 1020200067932 A KR1020200067932 A KR 1020200067932A KR 20200067932 A KR20200067932 A KR 20200067932A KR 102331574 B9 KR102331574 B9 KR 102331574B9
Authority
KR
South Korea
Prior art keywords
tdi
image sensor
same
exposure time
inspection system
Prior art date
Application number
KR1020200067932A
Other languages
English (en)
Other versions
KR102331574B1 (ko
Inventor
김영호
심영영
Original Assignee
주식회사 뷰웍스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 뷰웍스 filed Critical 주식회사 뷰웍스
Priority to KR1020200067932A priority Critical patent/KR102331574B1/ko
Priority to DE102021114204.0A priority patent/DE102021114204A1/de
Priority to US17/337,115 priority patent/US11563906B2/en
Priority to CN202110618235.7A priority patent/CN113766154A/zh
Application granted granted Critical
Publication of KR102331574B1 publication Critical patent/KR102331574B1/ko
Publication of KR102331574B9 publication Critical patent/KR102331574B9/ko

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020200067932A 2020-06-04 2020-06-04 노출 시간 조절이 가능한 tdi 이미지 센서 및 이를 포함하는 검사 시스템 KR102331574B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020200067932A KR102331574B1 (ko) 2020-06-04 2020-06-04 노출 시간 조절이 가능한 tdi 이미지 센서 및 이를 포함하는 검사 시스템
DE102021114204.0A DE102021114204A1 (de) 2020-06-04 2021-06-01 TDI-Bildsensor mit Fähigkeit zur Einstellung der Belichtungszeit, und Inspektionssystem mit diesem Sensor
US17/337,115 US11563906B2 (en) 2020-06-04 2021-06-02 TDI image sensor capable of adjusting exposure time and inspection system comprising the same
CN202110618235.7A CN113766154A (zh) 2020-06-04 2021-06-03 能够调整曝光时间的tdi图像传感器和包括其的检查系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200067932A KR102331574B1 (ko) 2020-06-04 2020-06-04 노출 시간 조절이 가능한 tdi 이미지 센서 및 이를 포함하는 검사 시스템

Publications (2)

Publication Number Publication Date
KR102331574B1 KR102331574B1 (ko) 2021-11-26
KR102331574B9 true KR102331574B9 (ko) 2022-03-15

Family

ID=78604901

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200067932A KR102331574B1 (ko) 2020-06-04 2020-06-04 노출 시간 조절이 가능한 tdi 이미지 센서 및 이를 포함하는 검사 시스템

Country Status (4)

Country Link
US (1) US11563906B2 (ko)
KR (1) KR102331574B1 (ko)
CN (1) CN113766154A (ko)
DE (1) DE102021114204A1 (ko)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1175118A (ja) * 1997-08-29 1999-03-16 Matsushita Electric Ind Co Ltd ビデオカメラ
JPH11164207A (ja) * 1997-11-26 1999-06-18 Nec Corp 撮像装置の露光時間制御方法及び露光制御装置
JP4264381B2 (ja) * 2004-04-30 2009-05-13 株式会社モリタ製作所 固体撮像素子の２次元画像処理方法及び医療用デジタルｘ線撮影装置
KR100787190B1 (ko) 2006-06-14 2007-12-21 주식회사 쎄이미지 이미지 센서의 유효 다이나믹 레인지를 효과적으로증대하는 더블 셔터링 방법
JP2008288946A (ja) * 2007-05-18 2008-11-27 Seiko Epson Corp アドレス生成装置及び撮像素子
US8228400B2 (en) * 2009-04-17 2012-07-24 Sony Corporation Generation of simulated long exposure images in response to multiple short exposures
JP5753020B2 (ja) * 2011-08-03 2015-07-22 ヤマハ発動機株式会社 部品実装装置
CN102685403B (zh) * 2012-05-07 2014-07-16 天津大学 扩展tdi-cmos图像传感器动态范围的方法
WO2015069440A1 (en) * 2013-11-06 2015-05-14 Thorlabs, Inc. Method for correcting images acquired via asynchronously triggered acquisition
KR102198853B1 (ko) * 2014-11-27 2021-01-05 삼성전자 주식회사 이미지 센서, 및 상기 이미지 센서를 포함하는 이미지 처리 시스템
US9686478B2 (en) * 2015-11-19 2017-06-20 Google Inc. Generating high-dynamic range images using multiple filters
FR3047112B1 (fr) * 2016-01-22 2018-01-19 Teledyne E2V Semiconductors Sas Capteur d'image multilineaire a transfert de charges a reglage de temps d'integration
JP6689145B2 (ja) * 2016-06-28 2020-04-28 三菱電機株式会社 撮像装置
US10554899B2 (en) * 2016-12-16 2020-02-04 Goodrich Corporation HDR imaging
JP6827394B2 (ja) * 2017-09-26 2021-02-10 株式会社 日立産業制御ソリューションズ 撮像装置、撮像処理論理素子及び撮像素子

Also Published As

Publication number Publication date
CN113766154A (zh) 2021-12-07
US11563906B2 (en) 2023-01-24
DE102021114204A1 (de) 2021-12-09
US20210385396A1 (en) 2021-12-09
KR102331574B1 (ko) 2021-11-26

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G170 Re-publication after modification of scope of protection [patent]