KR102330044B1 - Method for manufacturing shielding film for semiconductor package and method for sputtering for semiconductor package using the same - Google Patents

Abstract

Disclosed are a shielding film for a semiconductor package and an invention related to a semiconductor package sputtering method using the same. In one embodiment, the shielding film for the semiconductor package includes a base layer; a silicone-based adhesive layer formed on one surface of the base layer; and metal powder dispersed between the base layer and the adhesive layer, wherein the base layer includes at least one of polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphralate (PEN).

Description

Shielding film for semiconductor package and semiconductor package sputtering method using the same

The present invention relates to a shielding film for a semiconductor package and a semiconductor package sputtering method using the same.

Recently, electronic devices have been miniaturized and operated at high frequencies, and accordingly, the importance of semiconductor packaging technology mounted on electronic devices has been highlighted. On the other hand, semiconductor packaging technology requires miniaturization of a semiconductor package, workability during semiconductor package mounting, and mechanical and electrical reliability after semiconductor mounting.

Surface mount packages used in integrated circuits include Pin Grid Array (PGA), Land Grid Array (LGA), and Ball Grid Array (BGA).

In the ball grid arrangement and the pin grid arrangement, a semiconductor chip is attached to an upper surface of a substrate on which a metal circuit wiring is formed, a bonding pad of the semiconductor chip and a circuit wiring of a substrate insulator are wire-bonded with a conductive wire to electrically connect the ball grid; In the arrangement, a plurality of solder balls are arranged in a lattice form as external connection terminals on the lower surface of the substrate.

In a semiconductor package having a ball grid arrangement, solder balls arranged in a grid form serve to transmit electrical signals, and the pin grid arrangement uses pins to transmit electrical signals.

Also, in the land grid arrangement, the conductive bumps of the semiconductor chip are fused to the conductive pattern for attaching the bumps formed on the printed circuit board, and then the underfill material is injected into the space between the semiconductor chip and the substrate to manufacture the land grid semiconductor package. . The land grid arrangement type semiconductor package is similar to the structure in which the solder balls are not attached in the ball grid arrangement type semiconductor package.

On the other hand, with the recent multi-function, high frequency, high capacity, and high speed of electronic devices, the emission amount of electromagnetic waves is increasing, and the importance of electromagnetic wave shielding of semiconductor packages of electronic devices is further increasing in order to prevent electromagnetic interference.

In general, when manufacturing a semiconductor package, the electromagnetic wave shielding layer is formed through sputtering. The shielding layer using sputtering is formed on a portion except for the lower surface of the semiconductor package where the land grid or the ball grid is located. To this end, an adhesive tape is closely adhered to the lower surface of the semiconductor package, and sputtering is performed on the portion except for this to form a shielding layer.

Meanwhile, high-temperature heat is generated during the sputtering process of the semiconductor package. In order to prevent the semiconductor package from being damaged by heat, a cooling system is used to cool the semiconductor package.

Meanwhile, in conventional sputtering, an adhesive tape for shielding a land grid or a ball grid is mainly formed on a silicone adhesive layer and a surface of the adhesive layer, and includes an opaque metal film layer, followed by cooling after sputtering.

On the other hand, in the semiconductor package, the adhesive tape is separated from the semiconductor package by using a vision system after sputtering cooling. Since the position of the semiconductor package cannot be determined using the positioned vision system, it is difficult to separate the semiconductor package.

Background art related to the present invention is disclosed in Japanese Patent Registration No. 4674070 (April 20, 2011 Announcement, title of the invention: semiconductor chip manufacturing method).

One object of the present invention is to provide a shielding film for a semiconductor package excellent in adhesion and thermal conductivity of the semiconductor package, and excellent cooling efficiency during cooling after sputtering of the semiconductor package.

Another object of the present invention is to provide a shielding film for a semiconductor package that is capable of accurately positioning a semiconductor package through imaging using a vision system and has excellent workability for taking out the semiconductor package.

Another object of the present invention is to provide a shielding film for a semiconductor package that minimizes the defect rate of the semiconductor package, and has excellent productivity and economy.

Another object of the present invention is to provide a shielding film for a semiconductor package that is excellent in adhesion and dimensional stability, and can be easily removed from the semiconductor package after the shielding layer is formed.

Another object of the present invention is to provide a semiconductor package sputtering method using the shielding film for the semiconductor package.

One aspect of the present invention relates to a shielding film for a semiconductor package. In one embodiment, the shielding film for the semiconductor package includes a base layer; a silicone-based adhesive layer formed on one surface of the base layer; and metal powder dispersed between the base layer and the adhesive layer, wherein the base layer includes at least one of polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphralate (PEN).

In one embodiment, the metal powder may include iron (Fe) and have an average particle diameter (D50) of 1 to 10 μm.

In one embodiment, the shielding film for a semiconductor package further includes a matrix layer formed between the base layer and the adhesive layer, wherein the matrix layer includes at least one of a silicone-based resin and an acrylic resin, and the matrix layer is The metal powder may be dispersed.

Under the above conditions, it is possible to prevent a phenomenon in which the metal powder protrudes to the outside of the adhesive layer and comes into contact with a semiconductor package, which will be described later, causing semiconductor defects.

In one embodiment, the base layer may have a thickness of 10 to 100 μm, the adhesive layer may have a thickness of 10 to 100 μm, and the matrix layer may have a thickness of 10 to 50 μm.

In one embodiment, the adhesive layer may have an adhesive strength of 200 gf/25 mm or more at room temperature (25° C.) measured according to ASTM D 3330 standard.

Another aspect of the present invention relates to a semiconductor package sputtering method using the shielding film for the semiconductor package. In one embodiment, the semiconductor package sputtering method includes: preparing a unit semiconductor package by sawing the semiconductor package; laminating the surface on which the grid arrangement of the unit semiconductor package is formed and the adhesive layer of the shielding film; loading the base layer of the shielding film on a loading member for sputtering; forming a shielding layer by sputtering the unit semiconductor package; and cooling the unit semiconductor package on which the shielding layer is formed, wherein the loading member includes a magnetic part for applying a magnetic force to the metal powder of the shielding film, and the unit semiconductor package has a magnetic force of the magnetic part during loading. is in close contact with the loading member, and the cooling cools the unit semiconductor package by using a cooling means provided under the loading member.

In one embodiment, the grid arrangement may be in the form of a ball grid arrangement or a land grid arrangement.

In one embodiment, the sputtering method may include: after cooling the unit semiconductor package, determining a position of the unit semiconductor package disposed on the shielding film by using a vision system provided under the loading member; arranging a take-out means corresponding to a position where the unit semiconductor package is disposed; and separating the unit semiconductor package from the shielding film using the take-out means.

When sputtering a semiconductor package using the shielding film for a semiconductor package of the present invention, the adhesion and thermal conductivity of the semiconductor package are excellent, so the cooling efficiency is excellent when the semiconductor package is cooled after sputtering, and it is accurate through imaging of the semiconductor package using a vision system Location can be identified, semiconductor package take-out workability is excellent, semiconductor package defect rate is minimized, productivity and economy are excellent, adhesion and dimensional stability are excellent, and it is easily removed from the semiconductor package after the shielding layer is formed can be

1 shows a shielding film for a semiconductor package according to an embodiment of the present invention.
2 is a schematic diagram showing a cooling process after sputtering of the shielding film of the present invention.
Figure 3 (a) is a photograph of the shielding film of the embodiment, Figure 3 (b) is a photograph of the shielding film of the comparative example.

Hereinafter, the present invention will be described in detail. At this time, when it is determined that a detailed description of a related known technology or configuration may unnecessarily obscure the gist of the present invention in describing the present invention, the detailed description thereof will be omitted.

And, the terms described below are terms defined in consideration of functions in the present invention, which may vary depending on the intention or custom of the user or operator, so the definition should be made based on the content throughout this specification describing the present invention.

Shielding film for semiconductor package

One aspect of the present invention relates to a shielding film for a semiconductor package. 1 shows a shielding film for a semiconductor package according to an embodiment of the present invention. Referring to FIG. 1 , the shielding film 100 for a semiconductor package includes a base layer 10 ; a silicone-based adhesive layer 20 formed on one surface of the base layer 10; and a metal powder 32 dispersed between the base layer 10 and the adhesive layer 20 .

In one embodiment, the base layer 10 includes at least one of polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphralate (PEN). When the substrate layer of the above conditions is applied, the cooling efficiency is not reduced and the thermal deformation is minimized due to excellent heat resistance, thereby preventing the contact area between the semiconductor package and the shielding film from lifting up, so that the grid arrangement of the semiconductor package during the sputtering process It is possible to prevent the formation of a shielding layer in the region.

In one embodiment, the base layer may have a thickness of 10 to 100 μm. In the thickness range, the cooling property is not deteriorated during cooling by the cooling member, and heat deformation is minimized due to excellent heat resistance, thereby preventing a phenomenon in which the contact portion between the semiconductor package and the shielding film is lifted.

In one embodiment, the base layer may have a light transmittance of 30% or more. For example, it may be 30-60%. Under the above conditions, transparency is excellent, so it may be easy to analyze the position of the semiconductor package through the vision system to be described later. For example, it may be 80-99%.

In one embodiment, the metal powder 32 includes iron (Fe), and may have an average particle diameter (D50) of 1 to 10 μm. Under the average particle diameter condition, the adhesion between the loading member and the unit stack by magnetic force is excellent, so that voids do not occur between the loading member and the unit stack, and the cooling efficiency can be excellent.

Referring to FIG. 1 , the metal powder 32 is formed on the interface between the adhesive layer 20 and the base layer 10 , and is formed so as not to be exposed on the surface of the adhesive layer 20 . When the metal powder 32 is exposed on the surface of the adhesive layer 20, it comes into contact with the grid arrangement surface of the semiconductor package, thereby increasing the defect rate.

Referring to FIG. 1 , the shielding film for a semiconductor package may further include a matrix layer 30 formed between the base layer 10 and the adhesive layer 20 . In one embodiment, the matrix layer may include at least one of a silicone-based resin and an acrylic resin, and the metal powder may be dispersed in the matrix layer. Under the above conditions, the metal powder may not be exposed on the surface of the adhesive layer 20 . For example, the matrix layer may be one in which the metal powder is dispersed in at least one of the silicone-based resin and the acrylic resin.

In one embodiment, the metal powder may be dispersed ^{in the matrix layer at a density of 1-150 g/cm 3 .} Under the above conditions, it is possible to accurately recognize the position of the semiconductor package loaded through the vision system under the shielding film because the transparency is not deteriorated while the cooling efficiency is excellent due to the excellent adhesion by the magnetic force of the magnetic part of the loading member to be described later. have.

In one embodiment, the adhesive layer 20 includes a silicone-based resin. Under the above conditions, adhesion may be excellent. The silicone-based resin may be formed on the adhesive layer using a conventional method.

In one embodiment, the silicone-based resin may include a photocurable silicone resin.

In one embodiment, the adhesive layer may have a thickness of 10 to 100 μm, and the matrix layer may have a thickness of 10 to 50 μm. Under the conditions of the thickness of the adhesive layer and the matrix layer, the grid arrangement portion of the semiconductor package is exposed to the outside, and a shielding layer is formed during the sputtering process to prevent an increase in the defect rate.

In one embodiment, the adhesive layer may have an adhesive strength of 200 gf/25 mm or more at room temperature (25° C.) measured according to ASTM D 3330 standard. Under the above conditions, when the shielding film is removed, the adhesive component is not transferred to the semiconductor package and the adhesive force between the unit laminate and the adhesive layer is excellent, so that the formation of the shielding layer on the grid arrangement during sputtering can be prevented. For example, the adhesive strength may be 200 ~ 1,500 gf / 25mm.

Semiconductor package sputtering method using shielding film for semiconductor package

Another aspect of the present invention relates to a semiconductor package sputtering method using the shielding film for the semiconductor package.

In one embodiment, the semiconductor package sputtering method includes (S10) preparing a unit semiconductor package; (S20) shielding film lamination step; (S30) loading step; (S40) sputtering step; and (S50) cooling step. More specifically, the semiconductor package sputtering method includes the steps of (S10) preparing a unit semiconductor package by sawing the semiconductor package; (S20) laminating the surface on which the grid arrangement of the unit semiconductor package is formed and the adhesive layer of the shielding film; (S30) loading the base layer of the shielding film on a loading member for sputtering; (S40) forming a shielding layer by sputtering the unit semiconductor package; and (S50) cooling the unit semiconductor package on which the shielding layer is formed.

(S10) unit semiconductor package preparation step

The step is a step of preparing a unit semiconductor package by sawing the semiconductor package.

(S20) Shielding film lamination step

The step is a step of laminating the surface on which the grid arrangement of the unit semiconductor package is formed and the adhesive layer of the shielding film. In one embodiment, the grid arrangement may be in the form of a ball grid arrangement or a land grid arrangement.

(S30) loading step

The step is a step of loading the base layer of the shielding film onto the sputtering loading member. In one embodiment, the loading member includes a magnetic part for applying a magnetic force to the metal powder of the shielding film. When the magnetic part is included, the unit semiconductor package may be in close contact with the loading member by the magnetic force of the magnetic part during the loading process, so that cooling efficiency, which will be described later, may be excellent.

(S40) sputtering step

The step is a step of forming a shielding layer by sputtering the unit semiconductor package. The sputtering may be performed under normal conditions. During the sputtering, except for the surface of the semiconductor package laminated with the shielding film, metal is deposited on the remaining portions to form a shielding layer.

(S50) cooling step

The step is a step of cooling the unit semiconductor package on which the shielding layer is formed. 2 is a schematic diagram showing a cooling process after sputtering of the shielding film of the present invention. 2, the cooling of the present invention may be cooled using a cooling means (not shown) provided in the lower portion of the sputtering loading member 300.

At this time, the magnetic part 310 provided in the loading member 300 applies a magnetic force to the metal powder 32 of the shielding film 100, and the adhesion between the shielding film and the loading member is excellent, and thermal conductivity is excellent. can be excellent Accordingly, heat generated in the process of forming the shielding layer 400 by sputtering on the surface of the unit semiconductor package 200 may be efficiently cooled by the cooling means. In one embodiment, the cooling means may use a cooling pipe including a cooling medium, but is not limited thereto.

In another embodiment of the present invention, in the sputtering method, after cooling the unit semiconductor package (S50), (S60) the unit semiconductor package disposed on the shielding film using a vision system provided under the loading member determining the location of the; (S70) arranging a take-out means corresponding to a position where the unit semiconductor package is disposed; and (S80) separating the unit semiconductor package from the shielding film using the take-out means.

In the step (S60), when the transparent shielding film of the present invention is applied, the position where the unit semiconductor package is arranged from the lower side can be easily identified and imaged using the vision system, and the unit can be easily taken out by the extraction means. The semiconductor package may be separated from the shielding film. The extraction means may use a pick-up means such as a picker, but is not limited thereto.

For example, the unit semiconductor package may be separated from the shielding film by disposing a take-out means on the sputtering surface of the unit semiconductor package and transferred to a subsequent process.

When sputtering a semiconductor package using the shielding film for a semiconductor package of the present invention, the adhesion and thermal conductivity of the semiconductor package are excellent, so the cooling efficiency is excellent when the semiconductor package is cooled after sputtering, and it is accurate through imaging of the semiconductor package using a vision system Location can be identified, semiconductor package take-out workability is excellent, semiconductor package defect rate is minimized, productivity and economy are excellent, adhesion and dimensional stability are excellent, and it is easily removed from the semiconductor package after the shielding layer is formed can be

Hereinafter, the configuration and operation of the present invention will be described in more detail through preferred embodiments of the present invention. However, this is presented as a preferred example of the present invention and cannot be construed as limiting the present invention in any sense.

Examples and Comparative Examples

Example

(1) Shielding film preparation: A matrix layer with a thickness of 10 to 50 μm on one surface of a base layer of a polyimide (PI) material having a thickness of 10 to 40 μm (iron (Fe)-based resin with an average particle diameter of 1 to 10 μm in silicon-based resin metal powder was dispersed).

A pressure-sensitive adhesive layer comprising a silicone-based adhesive layer having a normal temperature (25° C.) adhesive strength of 200 to 1500 gf/25 mm and a thickness of 10 to 100 μm measured according to ASTM D 3330 standard is formed on the surface of the matrix layer to form a semiconductor package A shielding film for use was prepared.

(2) Sputtering: A unit semiconductor package was prepared by sawing a semiconductor package in which a ball grid arrangement was formed, and the grid arrangement surface of the unit semiconductor package was laminated with the adhesive layer of the shielding film. Then, the base layer of the shielding film was inserted into a sputtering device and loaded on a loading member for sputtering, and at this time, a magnetic force was applied to the metal powder of the shielding film by a magnetic part provided in the loading member to apply a magnetic force to the shielding film. and the loading member were attached to each other. Then, the unit semiconductor package was sputtered to form a shielding layer on the exposed surface of the unit semiconductor package except for the surface laminated with the shielding film. Then, the unit semiconductor package was cooled by using a cooling means provided under the loading member.

Comparative Example 1

A shielding film was prepared in the same manner as in the above Example, except that a metal-based film (aluminum film having a thickness of 10 to 40 μm) was applied as the base layer, and sputtering was performed.

Comparative Example 2

Except that the iron-based metal powder was not applied, a shielding film was prepared in the same manner as in the above example, and sputtering was performed.

Experimental example

(1) Evaluation of cooling efficiency: For Examples and Comparative Examples 1 and 2 in which the sputtering was completed, cooling efficiency was evaluated according to the following four criteria, and the results are shown in Table 1 below.

(◎: very good, ○: excellent, △: average, X: poor)

(2) Evaluation of workability when separating the unit semiconductor package: For the Examples and Comparative Examples 1 and 2, workability when separating the unit semiconductor package was evaluated. Specifically, by using the vision system provided under the loading member, the position of the unit semiconductor package disposed on the shielding film of the Examples and Comparative Examples is identified, and the upper direction of the shielding layer corresponds to the position at which the unit semiconductor package is disposed. After disposing a take-out means in the , the unit semiconductor package was separated from the shielding film by using the take-out means, and the workability was evaluated based on the following four criteria and shown in Table 1 below.

(◎: very good, ○: excellent, △: average, X: poor)

Figure 3 (a) is a photograph of the shielding film of the embodiment, Figure 3 (b) is a photograph of the shielding film of the comparative example. Referring to the results of Figure 3 and Table 1, when sputtering by applying the shielding film according to the present invention, the adhesion between the shielding film and the loading member was excellent, so that efficient cooling was possible, and the transparency of the shielding film was excellent, It was found that the position of the unit semiconductor package can be accurately recognized using the vision system from the bottom, and thus the work efficiency is excellent during separation.

On the other hand, in the case of Comparative Example 1 to which the base layer of the present invention was not applied, it was impossible to confirm using a vision system on the lower surface of the shielding film due to the opaque base layer, so that the separation workability of the package was significantly reduced, and the metal of the present invention In the case of Comparative Example 2 in which the powder was not applied, it was found that the cooling efficiency was significantly reduced due to poor adhesion between the shielding film and the loading member.

Simple modifications or changes of the present invention can be easily carried out by those of ordinary skill in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

10: base layer 20: adhesive layer
30: matrix layer 32: metal powder
100: shielding film 200: unit semiconductor package
300: loading member 310: magnetic part
400: shielding layer

Claims (8)

A shielding film for semiconductor package sputtering using a vision system, comprising:
base layer;
a silicone-based adhesive layer formed on one surface of the base layer; and
a matrix layer formed between the base layer and the adhesive layer;
The matrix layer includes at least one of a silicone-based resin and an acrylic resin,
A metal powder is dispersed in the matrix layer,
The base layer includes at least one of polyimide (PI), polyethylene terephthalate (PET) and polyethylene naphralate (PEN),
The silicone-based adhesive layer has an adhesive strength of 200~1500 gf/25mm at room temperature (25°C) measured according to ASTM D 3330 standard,
A shielding film for semiconductor package sputtering using a vision system, characterized in that the shielding film is light-transmitting so that the position of the semiconductor package attached to the silicon-based adhesive layer can be identified using a vision system located on the lower surface of the base layer.
The shielding film for semiconductor package sputtering using a vision system according to claim 1, wherein the metal powder contains iron (Fe) and has an average particle diameter (D50) of 1 to 10 μm.
delete According to claim 1, wherein the base layer has a thickness of 10 ~ 100㎛,
The adhesive layer has a thickness of 10 to 100 μm, and
The matrix layer is a shielding film for semiconductor package sputtering using a vision system, characterized in that the thickness is 10 ~ 50㎛.
delete preparing a unit semiconductor package by sawing the semiconductor package;
laminating the surface on which the grid arrangement of the unit semiconductor package is formed and the adhesive layer of the shielding film of claim 1;
loading the base layer of the shielding film on a loading member for sputtering;
forming a shielding layer by sputtering the unit semiconductor package;
cooling the unit semiconductor package on which the shielding layer is formed;
identifying a position of a unit semiconductor package disposed on the shielding film by using a vision system provided under the loading member;
arranging a take-out means corresponding to a position where the unit semiconductor package is disposed; and
Separating the unit semiconductor package from the shielding film by using the take-out means; is a semiconductor package sputtering method using a vision system comprising:
The loading member includes a magnetic part for applying a magnetic force to the metal powder of the shielding film,
During the loading, the unit semiconductor package is in close contact with the loading member by the magnetic force of the magnetic part,
The cooling is a semiconductor package sputtering method using a vision system, characterized in that cooling the unit semiconductor package using a cooling means provided under the loading member.
According to claim 6, The grid arrangement,
A semiconductor package sputtering method using a vision system, characterized in that it is in the form of a ball grid array or a land grid array.
delete

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