KR102329513B1 - Connections between laminated heater and heater voltage inputs - Google Patents

Abstract

A substrate support for a substrate processing system includes a baseplate into a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and a ceramic layer in a first zone of the plurality of heating zones; and wiring provided through the heating layer. Electrical connections are routed across the ceramic layer from the wiring in the first zone to the second zone of the plurality of heating zones and to the heating element of the heating layer in the second zone.

Description

CONNECTIONS BETWEEN LAMINATED HEATER AND HEATER VOLTAGE INPUTS

The present disclosure relates to substrate processing systems, and more particularly to systems and methods for controlling a substrate support temperature.

The background description provided herein is generally intended to provide a context for the present disclosure. The achievements of the inventors to the extent described in this background section and aspects of the art that may not be admitted as prior art at the time of filing are not expressly or implicitly admitted as prior art to the present disclosure.

Substrate processing systems may be used to process substrates, such as semiconductor wafers. Exemplary processes that may be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and/or other etching, deposition or cleaning processes. The substrate may be placed on a substrate support, such as a pedestal, electrostatic chuck (ESC), or the like, of a processing chamber of a substrate processing system. During etching, gas mixtures comprising one or more precursors may be introduced into the processing chamber and plasma may be used to initiate chemical reactions.

A substrate support, such as an ESC, may include a ceramic layer arranged to support the substrate. For example, the substrate may be clamped to the ceramic layer during processing. A heating layer may be arranged between the base plate and the ceramic layer of the substrate support. By way of example only, the heating layer may be a ceramic heating plate including heating elements, wiring, and the like. The temperature of the substrate may be controlled during process steps by controlling the temperature of the heating plate.

A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and a baseplate, a heating layer in a first zone of the plurality of heating zones. wiring provided into the ceramic layer through Electrical connections are routed from the wiring in the first zone, across the ceramic layer to the second zone of the plurality of heating zones, and to the heating element in the heating layer in the second zone.

In other features, the electrical connection corresponds to the electrical trace. The electrical connection corresponds to a second wiring different from the wiring provided through the baseplate. The second zone is located radially outside the first zone. The electrical connection has a lower electrical resistance than the heating element.

In other features, the substrate support includes a via provided through the baseplate, the heating layer, and the ceramic layer of the first zone, and the wiring is routed through the via. The electrical connection is coupled to the connection point of the heating element using at least one of a solder connection and a conductive epoxy.

In still other features, the substrate support includes a via provided through the ceramic layer and the heating layer of the second zone. The via is filled with a conductive material that couples the electrical connection to the connection point of the heating element. The substrate support includes contact pads arranged between the electrical connection and the heating element. The contact pad includes a first portion arranged in the ceramic layer and a second portion arranged in the heating layer. The vias are filled with a conductive material. A conductive material is provided between the first portion of the contact pad and the second portion of the contact pad.

Additional areas of applicability of the present disclosure will become apparent from the detailed description, claims and drawings. The detailed description and specific examples are intended for illustrative purposes only and are not intended to limit the scope of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS The present disclosure will be more fully understood from the detailed description and accompanying drawings.
1 is a functional block diagram of an exemplary substrate processing system including a substrate support in accordance with the principles of the present disclosure.
2A is an exemplary electrostatic chuck in accordance with the principles of the present disclosure.
2B illustrates zones and thermal control elements of an exemplary electrostatic chuck in accordance with the principles of this disclosure.
3 illustrates an exemplary routing of electrical connections through a ceramic layer of an electrostatic chuck in accordance with the principles of the present disclosure.
4A and 4B illustrate a first exemplary connection between a ceramic layer and a heating layer in accordance with the principles of the present disclosure.
5A and 5B illustrate a second exemplary connection between a ceramic layer and a heating layer in accordance with the principles of the present disclosure.
6A and 6B illustrate a third exemplary connection between a ceramic layer and a heating layer in accordance with the principles of the present disclosure.
In the drawings, reference numbers may be reused to identify similar and/or identical elements.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Patent Application No. 62/334,097, filed May 10, 2016, and Provisional Patent Application No. 62/334,084, filed May 10, 2016.

This application relates to U.S. Patent Application Serial No. 15/586,178, filed on May 3, 2017. The entire disclosure of the above-referenced applications is incorporated herein by reference.

A substrate support, such as an electrostatic chuck (ESC), may include one or multiple heating zones (eg, a multi-zone ESC). The ESC may include respective heating elements for each zone of the heating layer. The heating elements are controlled to approximately achieve a desired set point temperature in each of the respective zones.

The heating layer may include stacked heating plates arranged between the base plate and the upper ceramic layer of the substrate support. The heating plate includes a plurality of heating elements arranged throughout the zones of the ESC. The heating elements include electrical traces or other wiring that receives voltage inputs provided from a voltage source below the ESC through the baseplate. For example, the baseplate may include one or more vias (eg, holes or access ports) aligned with connection points of the heating elements of the heating plate. A wiring is connected between the connection points of the voltage source and the heating elements through the vias of the baseplate.

Typically, vias and wiring routed through vias should be as close as possible to the corresponding connection points of heating elements to avoid heater exclusion zones (ie, zones in which heating elements cannot be located) and reduce temperature non-uniformities. desirable. For example, vias may be located directly below connection points. However, in some ESCs, various structural features may prevent providing vias, wires and other heating element components in the most desirable locations. Consequently, the vias and corresponding interconnects may be located more spaced apart and/or located outside the destination zone of the ESC. For example, in an ESC having an inner zone, a middle-inner zone, a middle-outer zone, and an outer zone, vias and wiring for the outer zone may be located below the middle outer-zone, and have a non-symmetrical heating pattern. and temperature non-uniformities.

Systems and methods in accordance with the principles of the present disclosure provide connections between voltage inputs and a heating plate through a ceramic layer over the heating plate. That is, the wiring is provided upwardly into the ceramic layer through the vias of the base plate and the heating layer. Within the ceramic layer, wiring, which may include electrical traces, contacts, etc., is routed horizontally (ie, across) towards a desired connection point of the heating layer and then downwardly back into the heating layer at the desired connection point. are routed Accordingly, the electrical connections between the vias and the respective connection points are embedded in the ceramic layer, and there is no need to minimize the distances between the vias and the wiring for the voltage inputs and the connection points. In this manner, routing electrical connections through the ceramic layer improves design flexibility (eg, location of vias), reduces heater exclusion zones, and improves temperature uniformity across the ESC.

Referring now to FIG. 1 , an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 may be used to perform etching using RF plasma and/or other suitable substrate processing. The substrate processing system 100 includes a substrate processing chamber 102 that surrounds other components of the substrate processing chamber 102 and contains an RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106 , such as an electrostatic chuck (ESC). During operation, the substrate 108 is disposed on the substrate support 106 . A particular substrate processing system 100 and chamber 102 are shown by way of example, and the principles of the present disclosure can be used to generate other types of substrate processing systems and chambers, such as plasma in situ, remote plasma generation and (eg, For example, it may be applied to a substrate processing system that implements delivery (using a microwave tube), and the like.

By way of example only, the upper electrode 104 may include a showerhead 109 that introduces and distributes process gases. The showerhead 109 may include a stem portion that includes one end connected to a top surface of the processing chamber. The base portion is generally cylindrical and extends radially outwardly from the opposite end of the stem at a location spaced apart from the top surface of the processing chamber. The substrate-facing surface or facing plate of the base portion of the showerhead includes a plurality of holes through which a process gas or a purge gas flows. Alternatively, the upper electrode 104 may include a conductive plate, and the process gases may be introduced in another manner.

The substrate support 106 includes a conductive baseplate 110 that acts as a lower electrode. The base plate 110 supports the ceramic layer 111 , and a heating plate 112 is arranged between the base plate 110 and the ceramic layer 111 . By way of example only, heating plate 112 may correspond to a laminated, multi-zone heating plate. A heat resistant layer 114 (eg, a bonding layer) may be arranged between the heating plate 112 and the baseplate 110 . The baseplate 110 may include one or more coolant channels 116 for flowing coolant through the baseplate 110 .

The RF generation system 120 generates and outputs an RF voltage to one of the upper electrode 104 lower electrodes (eg, the baseplate 110 of the substrate support 106 ). The other of the upper electrode 104 and the baseplate 110 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage that is fed to the top electrode 104 or baseplate 110 by a matching and distribution network 124 . have. In other examples, the plasma may be generated inductively or remotely. Although shown for illustrative purposes, RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, and the principles of the present disclosure may be applied to other suitable systems, such as transformer coupled plasma (TCP) systems, for example only; It may also be implemented in CCP cathode systems, remote microwave plasma generation and delivery systems.

Gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively gas sources 132), where N is an integer greater than zero. Gas sources supply one or more precursors and mixtures thereof.Gas sources may also supply a purge gas.Vaporized precursor may also be used.Gas sources 132 provide valves 134-1, 134 -2, …, and 134-N (collectively valves 134) and mass flow controllers (136-1, 136-2, …, and 136-N (collectively mass flow rate) It is coupled to the manifold 140 by controllers 136. The output of the manifold 140 is fed to the processing chamber 102. By way of example only, the output of the manifold 140 is 109) is fed.

The temperature controller 142 may provide voltage inputs to a plurality of heating elements 144 disposed within the heating plate 112 . For example, the heating elements 144 may include, but are not limited to, heating elements corresponding to respective zones in the multi-zone heating plate and/or micro heating disposed over a plurality of zones of the multi-zone heating plate. It may include an array of elements. The temperature controller 142 may be used to control the plurality of heating elements 144 to control the temperature of the substrate support 106 and the substrate 108 . The substrate support 106 according to the principles of the present disclosure routes electrical connections to the heating elements 144 through the ceramic layer 111 as described in more detail below.

The temperature controller 142 may communicate with the coolant assembly 146 to control coolant flow through the channels 116 . For example, the coolant assembly 146 may include a coolant pump and reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the channels 116 to cool the substrate support 106 .

A valve 150 and pump 152 may be used to evacuate reactants from the processing chamber 102 . The system controller 160 may be used to control components of the substrate processing system 100 . A robot 170 may be used to transfer substrates onto and remove substrates from the substrate support 106 . For example, the robot 170 may transfer substrates between the substrate support 106 and the loadlock 172 . Although shown as separate controllers, the temperature controller 142 may be implemented within the system controller 160 .

Referring now to FIGS. 2A and 2B , an exemplary ESC 200 is shown. The temperature controller 204 communicates with the ESC 200 via one or more electrical connections 208 . For example, electrical connections 208 may include, but are not limited to, heating elements 212 - 1 , 212 - 2 , 212 - 3 , and 212 - 4 , collectively referred to as heating elements 212 . ) ) and connections for receiving temperature feedback from one or more temperature sensors 220 .

As shown, ESC 200 is a multi-zone ESC comprising zones 224-1, 224-2, 224-3, and 224-4, collectively referred to as zones 224, each They may also be referred to as an outer zone, a mid-outer zone, a mid-medial zone, and an inner zone, respectively. The outer zone may correspond to the outermost zone. Although shown with four concentric zones 224 , in embodiments the ESC 200 may include one, two, three, or five or more zones 224 . The shapes of zones 224 may vary. For example, zones 224 may be provided in quadrants or another grid-like arrangement. Each of the zones 224 includes, for example only, a respective one of the zone temperature sensors 220 and a respective one of the heating elements 212 . In embodiments, each of the zones 224 may have one or more of the temperature sensors 220 .

The ESC 200 includes a baseplate 228 including coolant channels 232 , a heat resistant layer 236 formed on the baseplate 228 , and a multi-zone ceramic heating plate 240 formed on the heat resistant layer 236 . ), and an upper ceramic layer 242 formed on the heating plate 240 . Voltage inputs are provided from the temperature controller 204 to the heating elements 212 using wiring routed through the baseplate 228 and the ceramic layer 242 .

The temperature controller 204 controls the heating elements 212 according to the desired set point temperature. For example, the temperature controller 204 may receive a setpoint temperature for one or more zones 224 (eg, from the system controller 160 as shown in FIG. 1 ). For example only, the temperature controller 204 may receive the same setpoint temperature for all or some of the zones 224 or different respective setpoint temperatures for each of the zones 224 . The setpoint temperatures for each of the zones 224 may vary over different processes and different stages of each process.

The temperature controller 204 controls the heating elements 212 for each of the zones 224 based on the respective setpoint temperatures and temperature feedback provided by the sensors 220 . For example, the temperature controller 204 individually adjusts the power (eg, current or duty cycle) provided to each of the heating elements 212 to achieve setpoint temperatures at each of the sensors 220 . The heating elements 212 may each include a single resistive coil or other structure schematically represented by the dashed lines in FIG. 2B . Accordingly, adjusting one of the heating elements 212 affects the temperature of each zone 224 as a whole, and may also affect other of the zones 224 . The sensors 220 may provide temperature feedback only to a localized portion of each of the zones 224 . For example only, sensors 220 may be positioned in each portion of zone 224 previously determined to have the closest correlation to the average temperature of zone 224 .

As shown, each of vias 246 , 250 , and 254 and corresponding voltage inputs are connected to the middle-outer zone 224-2, the middle-inner zone 224-3, and the inner zone 224-4. ) is provided in As used herein, “vias” generally refer to openings, ports, etc. through a structure such as baseplate 228 , while “wiring” refers to the conductive material in the vias. . Although vias are shown in pairs in particular locations, for example only, any suitable locations and/or number of vias may be implemented. For example, vias 246 , 250 , and 254 are provided through baseplate 228 and wiring is provided through vias 246 , 250 , and 254 to respective connection points. However, vias 258 corresponding to outer zone 224 - 1 may be located more spaced apart than vias 246 , 250 , and 254 , and may be located within middle-outer zone 224 - 2 . have. That is, the wiring for the heating elements of the outer zone 224-1 is not provided directly below the outer zone 224-1. Accordingly, additional electrical connections are required to provide voltage inputs to the heating elements of the outer zone 224 - 1 .

3 shows an example ESC 400 with electrical connections 404 routed (eg, laterally transverse to) within a ceramic layer 408 . Although ceramic layer 408 is shown as a single uniform layer, in some examples, ceramic layer 408 may correspond to a plurality of individual layers, one of a plurality of layers, or the like. The ESC 400 is, for example only, an outer zone 410 - 1 (eg, corresponding to a radially outermost zone of the ESC 400 ), which may be collectively referred to as zones 410 , a middle- It has a plurality of zones including an outer zone 410-2, a middle-inner zone 410-3, and an inner zone 410-4. For example, vias 412 of baseplate 416 may be outside (eg, mid-outer zone 410 ) of outer zone 410 - 1 of ESC 400 as described above in FIGS. 2A and 2B . -2) may be located within). A voltage input (eg, wiring) 420 is routed through via 412 and heating layer 424 into ceramic layer 408 . Within the ceramic layer 408 , electrical connections 404 are routed across the ceramic layer 408 towards a connection point 428 in the heating layer 424 . Accordingly, a voltage input to the heating layer 424 in the outer zone 410 - 1 of the ESC is provided through the baseplate 416 and the ceramic layer 408 . In some examples, electrical connections 404 correspond to electrical traces. In other examples, the electrical connections 404 include wiring. For example, the wiring of the electrical connections 404 may be different or the same from the wiring of the voltage input 420 .

The electrical connections 404 in the ceramic layer 408 may have a conductive material and/or dimensions that have a low electrical resistance (eg, relative to the heating elements 436 of the heating layer 424 ). By way of example only, and not limitation, electrical connections 404 may include, but are not limited to, tungsten, copper, magnesium, palladium, silver, and/or various alloys thereof. Conversely, the heating elements 436 may include, but are not limited to, a nickel alloy, an iron alloy, a tungsten alloy, or the like. The heating layer 424 may include polyimide, acrylic, silicone, or the like, with heating elements 436 embedded therein.

Via 412 is located in middle-outer zone 410-2, and electrical connections 404 from middle-outer zone 410-2 across ceramic layer 408 to outer zone 410-1. Although shown routed to , in other examples the via 412 may be located within any one of the zones 410 , and the electrical connections 404 may be located within any of the other zones 410 . In some examples, electrical connections 404 are routed across a plurality of zones 410 (eg, from a via located within mid-inner zone 410-3 to outer zone 410-1). . Also, although electrical connections 404 are shown to be routed from a via in a radially inner zone to a radially outer zone, in other examples, electrical connections 404 are routed from a via in a radially outer zone to a radially inner zone (e.g., , from a via located in the outer zone 410 - 1 to the middle-inner zone 410 - 3 ).

Referring now to FIGS. 4A and 4B , a first exemplary arrangement of an ESC 450 in accordance with the principles of the present disclosure is shown. 4A is a cross-sectional view, and FIG. 4B is a plan view. In this example, electrical connection 454 (eg, corresponding to electrical connection 404 ) is routed through ceramic layer 458 formed on heating layer 462 . For example, electrical connections 454 are routed from the mid-outer zone to the outer zone of the ESC 450 . Electrical connection 454 is electrically coupled to a connection point of heating element 466 using conductive material 470 (eg, solder, conductive epoxy, etc.).

Referring now to FIGS. 5A and 5B , a second exemplary arrangement of an ESC 500 in accordance with the principles of the present disclosure is shown. 5A is a cross-sectional view, and FIG. 5B is a plan view. In this example, the electrical connections 504 are routed through the ceramic layer 508 formed on the heating layer 512 . For example, the electrical connections 504 are routed from the mid-outer zone to the outer zone of the ESC 500 . Electrical connection 504 is electrically coupled to a connection point of heating element 516 using via 520 filled with conductive material 524 (eg, solder, conductive epoxy, etc.). For example, via 520 may be formed through corresponding regions of electrical connection 504 , ceramic layer 508 , heating layer 512 , and heating element 516 , followed by conductive material 524 . It may be filled using

Referring now to FIGS. 6A and 6B , a third exemplary arrangement of an ESC 600 in accordance with the principles of the present disclosure is shown. 6A is a cross-sectional view, and FIG. 6B is a plan view. In this example, the electrical connections 604 are routed through the ceramic layer 608 formed on the heating layer 612 . For example, the electrical connections 604 are routed from the mid-outer zone to the outer zone of the ESC 600 . Electrical connection 604 is electrically coupled to the connection point of heating element 616 using via 620 filled with conductive material 624 (eg, solder, conductive epoxy, etc.). For example, via 620 may be formed through corresponding regions of electrical connection 604 , ceramic layer 608 , heating layer 612 , heating element 616 , and contact pad 628 , It may then be filled using conductive material 624 .

As shown, conductive material 624 is applied between the separated portions of contact pad 628 (ie, portion 632 of contact pad 628 coupled to electrical connection 604 and heating element 616 ). between the portion 636 of the contact pad 628 coupled to the Portions 632 and 636 of contact pad 628 may include the same material or different materials. For example, portion 632 may include the same material as electrical connection 604 , while portion 636 includes the same material as heating element 616 . In other examples, the contact pad 628 may correspond to a single structure coupled to both the electrical connection 604 and the heating element 616 having a via 620 formed therethrough.

The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, their application, or uses in any way. The broad teachings of the disclosure may be embodied in various forms. Accordingly, while this disclosure includes specific examples, the true scope of the disclosure should not be so limited, as other modifications will become apparent from a study of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be executed in a different order (or concurrently) without changing the principles of the present disclosure. Further, although each of the embodiments has been described above as having specific features, any one or more of these features described with respect to any embodiment of the present disclosure may be used in any other embodiment, even if the combination is not explicitly described. may be implemented with the features of and/or in combination with the features of any other embodiments. That is, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with other embodiments remain within the scope of the present disclosure.

Spatial and functional relationships between elements (eg, between modules, circuit elements, semiconductor layers, etc.) are “connected”, “engaged”, “coupled” )", "adjacent", "next to", "on top of", "above", "below", and "placed are described using various terms, including "disposed." Unless explicitly stated to be “direct,” when a relationship between a first element and a second element is described in the above disclosure, the relationship is such that other intervening elements between the first and second elements It may be a direct relationship that does not exist, but may also be an indirect relationship in which one or more intervening elements (spatially or functionally) exist between the first element and the second element. As discussed herein, at least one of the phrases A, B, and C should be construed to mean logically (A or B or C), using a non-exclusive logical OR, and "at least one A , at least one B, and at least one C".

In some implementations, the controller may be part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment, including a processing tool or tools, a chamber or chambers, a platform or platforms for processing, and/or specific processing components (substrate pedestal, gas flow system, etc.). . These systems may be incorporated into electronics for controlling their operation before, during, and after processing of a semiconductor substrate. Electronics may be referred to as a “controller,” which may control a system or various components or subparts of the systems. The controller controls delivery of processing gases, temperature settings (eg, heating and/or cooling), pressure settings, vacuum settings, power settings, depending on the processing requirements and/or type of system. , radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, tools and other transport tools and/or It may be programmed to control any of the processes disclosed herein, including substrate transfers into and out of loadlocks coupled or interfaced with a particular system.

Generally speaking, the controller receives instructions, issues instructions, controls an operation, enables cleaning operations, enables endpoint measurements, and/or various integrated circuits, logic, memory, and/or the like. It may be defined as an electronic device with software. Integrated circuits are chips in the form of firmware that store program instructions, digital signal processors (DSP), chips defined as application specific integrated circuits (ASICs) and/or one that executes program instructions (eg, software). It may include more than one microprocessor, or microcontrollers. Program instructions may be instructions passed to a controller or system in the form of various individual settings (or program files), which define operating parameters for executing a particular process on a semiconductor wafer or for a semiconductor substrate. In some embodiments, the operating parameters process one or more processing steps to achieve one or more processing steps during fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of the substrate. It may be part of a recipe prescribed by the engineer.

The controller may be coupled to or part of a computer, which, in some implementations, may be integrated into, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or part of a fab host computer system that may enable remote access of substrate processing. The computer monitors the current progress of manufacturing operations, examines the history of past manufacturing operations, examines trends or performance metrics from a plurality of manufacturing operations, changes parameters of the current processing, and performs processing steps following the current processing. You can also enable remote access to the system to set up, or start a new process. In some examples, a remote computer (eg, a server) can provide process recipes to the system over a network that may include a local network or the Internet. The remote computer may include a user interface that enables input or programming of parameters and/or settings to be subsequently passed from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each of the process steps to be performed during one or more operations. It should be understood that these parameters may be specific to the type of process to be performed and the type of tool the controller is configured to control or interface with. Thus, as described above, a controller may be distributed, eg, by including one or more separate controllers that are networked together and cooperate for a common purpose, eg, for the processes and controls described herein. An example of a distributed controller for this purpose is one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (eg, at the platform level or as part of a remote computer) that are combined to control a process on the chamber. can be circuits.

Exemplary systems include, but are not limited to, plasma etch chamber or module, deposition chamber or module, spin-rinse chamber or module, metal plating chamber or module, cleaning chamber or module, bevel edge etch chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etch (ALE) chamber or module, ion implantation chamber or module, track chamber or module, and semiconductor may include any other semiconductor processing systems that may be used or associated with the fabrication and/or fabrication of substrates.

As described above, depending on the process step or steps to be performed by the tool, the controller is used in material transfer to move containers of substrates from/to tool locations and/or load ports within the semiconductor fabrication plant. It may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a main computer, another controller or tools. .

Claims (13)

A substrate support for a substrate processing system, comprising:
a plurality of heating zones;
base plate;
a heating layer arranged on the base plate;
a ceramic layer arranged on the heating layer;
a wiring provided into the ceramic layer through the base plate and the heating layer in a first zone of the plurality of heating zones; and
and an electrical connection routed from the wiring in the first zone, across the ceramic layer to a second zone of the plurality of heating zones, and to a heating element in the heating layer in the second zone. The method of claim 1,
and the electrical connections correspond to electrical traces. The method of claim 1,
and the electrical connection portion corresponds to a second wiring different from the wiring provided through the base plate. The method of claim 1,
and the second zone is located radially outward of the first zone. The method of claim 1,
a via provided through the baseplate, the heating layer, and the ceramic layer of the first zone, wherein the wiring is routed through the via. The method of claim 1,
wherein the electrical connection has a lower electrical resistance than the heating element. The method of claim 1,
wherein the electrical connection is coupled to the connection point of the heating element using at least one of a solder connection and a conductive epoxy. The method of claim 1,
and a via provided through the ceramic layer and the heating layer of the second zone. 9. The method of claim 8,
and the via is filled with a conductive material coupling the electrical connection to the connection point of the heating element. 9. The method of claim 8,
and a contact pad arranged between the electrical connection and the heating element. 11. The method of claim 10,
wherein the contact pad comprises a first portion arranged in the ceramic layer and a second portion arranged in the heating layer. 12. The method of claim 11,
wherein the via is filled with a conductive material. 13. The method of claim 12,
and the conductive material is provided between the first portion of the contact pad and the second portion of the contact pad.

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