JP6907018B2 - Connection between laminated heater and heater voltage input - Google Patents

Description

Cross-reference to related applications This application benefits from US Provisional Patent Application No. 62 / 334,097 filed May 10, 2016 and US Provisional Patent Application No. 62 / 334,084 filed May 10, 2016. Insist.

This application is related to U.S. Patent Application No. 15 / 586,178 filed May 3, 2017. The entire disclosure of the above application is incorporated herein by reference.

The present disclosure relates to substrate processing systems, and in particular to systems and methods for controlling substrate support temperatures.

The description of the background art provided herein is for the purpose of schematically presenting the background of the present disclosure. The work of the inventor named herein, to the extent described in this background art, with respect to the present disclosure, both expressly and implicitly, with aspects described that would not normally be considered as prior art at the time of filing. Not recognized as a prior art.

A substrate processing system can be used to process substrates such as semiconductor wafers. Examples of treatments that can be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and / or other etching, vapor deposition, or cleaning treatments. The substrate can be placed on a substrate support (pedestal, electrostatic chuck (ESC), etc.) in the processing chamber of the substrate processing system. During etching, a gas mixture containing one or more precursors may be introduced into the processing chamber and plasma can be utilized to initiate a chemical reaction.

A substrate support such as an ESC may include a ceramic layer configured to support the substrate. For example, the substrate can be clamped to the ceramic layer during processing. A heating layer may be placed between the ceramic layer of the substrate support and the base plate. By way of example, the heating layer can be a ceramic heating plate that includes heating elements, wiring, and the like. The temperature of the substrate can be controlled during the processing process by controlling the temperature of the heating plate.

The substrate support for the substrate processing system is: with multiple heating compartments; with the base plate; with the heating layer placed on the base plate; with the ceramic layer placed on the heating layer; with the base plate, multiple heating through the heating layer. It comprises the wiring provided in the ceramic layer in the first compartment within the compartment. Electrical connections are routed from the wiring in the first compartment across the ceramic layer to the second compartment of the plurality of heating compartments and to the heating elements of the heating layer in the second compartment.

In another feature, the electrical connection corresponds to electrical wiring (hereinafter referred to as electrical trace) with a pattern on the printed circuit board. The electrical connection corresponds to a second wire that is different from the wire provided through the base plate. The second compartment is arranged radially outside the first compartment. Electrical connections have lower electrical resistance than heating elements.

In another feature, the substrate support comprises vias provided through the base plate, heating layer, and ceramic layer in the first compartment, and the wiring is routed through the vias. The electrical connection is coupled to the connection point of the heating element using at least one of a solder connection and a conductive epoxy.

In yet another feature, the substrate support comprises vias provided through a ceramic layer and a heating layer in the second compartment. The vias are filled with a conductive material to couple the electrical connection to the connection point of the heating element. The substrate support comprises a contact pad disposed between the electrical connection and the heating element. The contact pad comprises a first portion disposed within the ceramic layer and a second portion disposed within the heating layer. The vias are filled with a conductive material. The conductive material is provided between the first portion of the contact pad and the second portion of the contact pad.

The detailed description, claims, and drawings reveal additional areas to which this disclosure can be applied. The detailed description and specific examples are for illustration purposes only and are not intended to limit the scope of the present disclosure.

The present disclosure can be more fully understood from the detailed description and the accompanying drawings described below.

FIG. 6 is a functional block diagram showing an example of a substrate processing system provided with a substrate support according to the principle of the present disclosure.

Explanatory drawing which shows an example of the electrostatic chuck according to the principle of this disclosure.

Explanatory drawing which shows the section and a temperature control element of an example of an electrostatic chuck according to the principle of this disclosure.

Explanatory drawing which shows an example of routing an electrical connection through a ceramic layer of an electrostatic chuck according to the principle of this disclosure.

Explanatory drawing which shows the connection of 1st example between a ceramic layer and a heating layer according to the principle of this disclosure. Explanatory drawing which shows the connection of 1st example between a ceramic layer and a heating layer according to the principle of this disclosure.

Explanatory drawing which shows the connection of 2nd example between a ceramic layer and a heating layer according to the principle of this disclosure. Explanatory drawing which shows the connection of 2nd example between a ceramic layer and a heating layer according to the principle of this disclosure.

Explanatory drawing which shows the connection of 3rd example between a ceramic layer and a heating layer according to the principle of this disclosure. Explanatory drawing which shows the connection of 3rd example between a ceramic layer and a heating layer according to the principle of this disclosure.

The same reference numerals may be used in the drawings to identify similar and / or identical elements.

A substrate support such as an electrostatic chuck (ESC) may include one or more heating compartments (eg, multi-zone ESC). The ESC may include a respective heating element for each compartment of the heating layer. The heating element is controlled to approximately reach the desired set temperature in each of the respective compartments.

The heating layer may include a laminated heating plate disposed between the upper ceramic layer of the substrate support and the base plate. The heating plate comprises a plurality of heating elements arranged across the compartments of the ESC. The heating element comprises an electrical trace or other wiring that receives a voltage input supplied from a voltage source below the ESC through the base plate. For example, the base plate may include one or more vias (eg, holes or access ports) aligned with the connection points of the heating elements in the heating plate. The wiring is connected between the voltage source and the connection point of the heating element through vias in the base plate.

Typically, vias and wiring routed through the vias are possible at the corresponding junctions of the heating elements to eliminate heater exclusion compartments (ie, compartments where heating elements cannot be placed) and reduce temperature non-uniformity. It is desirable to be as close as possible. For example, the via can be placed directly below the connection point. However, in some ESCs, various structural features can prevent providing vias, wiring, and other heating element components in most desirable locations. As a result, the vias and corresponding wires may be located further apart and / or outside the ESC's destination compartment. For example, in an ESC having an inner compartment, an intermediate inner compartment, an intermediate outer compartment, and an outer compartment, vias and wiring for the outer compartment are placed below the intermediate outer compartment, resulting in an uncontrolled heating pattern and It can lead to temperature non-uniformity.

Systems and methods according to the principles of the present disclosure provide a connection between the voltage input and the heating plate through a ceramic layer above the heating plate. In other words, the wiring is provided upwards into the ceramic layer through the vias in the base plate and heating layer. Within the ceramic layer, the wiring may be equipped with electrical traces, contacts, etc., routed horizontally (ie, across) towards the desired connection point of the heating layer and then into the heating layer at the desired connection point. Go back down. Therefore, the electrical connection between the vias and their respective connection points is embedded in the ceramic layer, eliminating the need to minimize the distance between the vias and wiring for voltage input and the connection points. In this way, routing electrical connections through the ceramic layer improves design flexibility (eg, via location), reduces heater exclusion compartments, and improves temperature uniformity across the ESC.

Here, referring to FIG. 1, an example 100 of a substrate processing system is shown. As merely an example, the substrate processing system 100 may be used to perform etching and / or other suitable substrate processing with RF plasma. The substrate processing system 100 includes a substrate processing chamber 102 that accommodates other components of the substrate processing chamber 102 and confine RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106 (electrostatic chuck (ESC) or the like). During operation, the substrate 108 is placed on the substrate support 106. Although specific substrate processing systems 100 and chambers 102 are shown as examples, the principles of the present disclosure are substrate processing systems that generate in-situ plasma, such as the generation of remote plasma (using microwave tubes). And may be applied to other types of substrate processing systems and chambers, such as substrate processing systems that carry out the supply.

As a simple example, the upper electrode 104 may include a shower head 109 that introduces and disperses the processing gas. The shower head 109 may include a stem portion with one end connected to the top surface of the processing chamber. The base portion is substantially cylindrical and extends radially outward from the opposite end of the stem portion at a position away from the top surface of the processing chamber. The substrate facing surface or face plate of the base portion of the shower head is provided with a plurality of holes through which processing gas or purge gas flows. Alternatively, the upper electrode 104 may include a conductive plate, and the processing gas may be introduced in another way.

The substrate support 106 includes a conductive base plate 110 that functions as a lower electrode. The base plate 110 supports the ceramic layer 111, and the heating plate 112 is arranged between the base plate 110 and the ceramic layer 111. By way of example only, the heating plate 112 may correspond to a laminated multi-zone heating plate. A thermal resistance layer 114 (eg, a bond layer) may be arranged between the heating plate 112 and the base plate 110. The base plate 110 may include one or more coolant channels 116 for flowing the coolant through the base plate 110.

The RF generation system 120 generates an RF voltage and outputs it to one of the upper electrode 104 and the lower electrode (for example, the base plate 110 of the substrate support 106). The other side of the upper electrode 104 and the base plate 110 may be DC grounded, AC grounded, or floating. As merely an example, the RF generator system 120 may include an RF voltage generator 122 that generates an RF voltage that is supplied to the top electrode 104 or base plate 110 by the matching / distribution network 124. In another example, the plasma may be generated inductively or remotely. As illustrated for purposes of illustration, the RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, but the principles of the present disclosure are merely examples of trans-coupled plasma (TCP) systems, CCP cathode systems, remote microwaves. It may be implemented in other suitable systems, such as a wave plasma generation / supply system.

The gas supply system 130 comprises one or more gas sources 132-1, 132-2, ..., And 132-N (collectively, gas sources 132), where N is from zero. It is a large integer. The gas source supplies one or more precursors and mixtures thereof. The gas source may supply purge gas. Vaporized precursors may be used. The gas sources 132 are valves 134-1, 134-2, ..., And 134-N (collectively, valves 134) and mass flow controllers 136-1, 136-2, ..., And 136-. It is connected to the manifold 140 by N (collectively, mass flow controller 136). The output of the manifold 140 is supplied to the processing chamber 102. By way of example only, the output of the manifold 140 is supplied to the shower head 109.

The temperature controller 142 may supply voltage inputs to the plurality of heating elements 144 arranged on the heating plate 112. For example, the heating element 144 may include, but is limited to, a heating element corresponding to each compartment in the multi-zone heating plate and / or an array of micro-heating elements arranged across multiple compartments of the multi-zone heating plate. Not done. The temperature controller 142 is used to control the plurality of heating elements 144 to control the temperatures of the substrate support 106 and the substrate 108. The substrate support 106 according to the principles of the present disclosure routes electrical connections for the heating element 144 through the ceramic layer 111, as described in detail later.

The temperature controller 142 may communicate with the coolant assembly 146 to control the flow of coolant through the flow path 116. For example, the coolant assembly 146 may include a coolant pump and a coolant reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the flow path 116 to cool the substrate support 106.

A valve 150 and a pump 152 may be used to expel the reactants from the processing chamber 102. The system controller 160 may be used to control the components of the substrate processing system 100. The robot 170 may be used to supply the substrate onto the substrate support 106 and to remove the substrate from the substrate support 106. For example, the robot 170 may transfer the board between the board support 106 and the load lock 172. Although shown as a separate controller, the temperature controller 142 may be implemented within the system controller 160.

Here, with reference to FIGS. 2A and 2B, ESC200 is shown as an example. The temperature controller 204 communicates with the ESC 200 via one or more electrical connections 208. For example, the electrical connection 208 includes one or more connections for selectively controlling the heating elements 212-1, 212-2, 212-3, and 212-4 (collectively referred to as the heating element 212). Can include, but is not limited to, connections for receiving temperature feedback from the compartmentalized temperature sensor 220.

As shown in the figure, the ESC 200 is a multi-zone ESC with compartments 224-1, 224-2, 224-3, and 224-4 (collectively referred to as compartments 224), and these compartments are It may be referred to as an outer compartment, an intermediate outer compartment, an intermediate inner compartment, and an inner compartment. The outer compartment may correspond to the outermost compartment. Although four concentric compartments 224 are shown, in embodiments, the ESC 200 may include compartments 224 greater than 1, 2, 3, or 4. The shape of the compartment 224 may vary. For example, compartment 224 may be provided as a quadrant or another grid array. Each of the compartments 224 comprises, by way of example, each one of the compartment temperature sensors 220 and each one of the heating elements 212. In embodiments, each compartment 224 may have two or more temperature sensors 220.

The ESC 200 is formed on a base plate 228 provided with a coolant flow path 232, a thermal resistance layer 236 formed on the base plate 228, a multi-zone ceramic heating plate 240 formed on the thermal resistance layer 236, and a heating plate 240. The upper ceramic layer 242 is provided. A voltage input is supplied from the temperature controller 204 to the heating element 212 using wiring routed through the base plate 228 and the ceramic layer 242.

The temperature controller 204 controls the heating element 212 according to a desired set temperature. For example, temperature controller 204 may receive set temperatures for one or more of compartments 224 (eg, from system controller 160 as shown in FIG. 1). As merely an example, the temperature controller 204 may receive the same set temperature for all or part of the compartment 224 and / or different respective set temperatures for each of the compartments 224. The set temperature for each of the compartments 224 may vary in different treatments or in different steps of each treatment.

The temperature controller 204 controls the heating element 212 for each of the compartments 224 based on each set temperature and the temperature feedback provided by the sensor 220. For example, the temperature controller 204 individually adjusts the power (eg, current or duty cycle) provided to each of the heating elements 212 in order to achieve a set temperature on each of the sensors 220. The heating element 212 may comprise a single resistance coil or other structure schematically represented by the dashed line in FIG. 2B. Therefore, adjusting one of the heating elements 212 may affect the temperature of each compartment 224 as a whole and may affect the other compartments within the compartment 224. Sensor 220 may provide temperature feedback for only each local portion of compartment 224. By way of example only, the sensor 220 may be located in a portion of each compartment 224 previously determined to have the closest correlation with the average temperature of the compartment 224.

As shown, the respective vias 246, 250, and 254, as well as the corresponding voltage inputs, are provided in the intermediate outer compartment 224-2, the intermediate inner compartment 224-3, and the inner compartment 224-4. Will be done. As used herein, a "via" is generally an opening, a port, or the like that penetrates a structure such as a base plate 228, and a "wiring" is a conductive material inside the via. Is. Vias are shown in pairs at specific positions, by way of example only, but any suitable position and / or number of vias may be implemented. For example, vias 246, 250, and 254 are provided through the base plate 228, and wiring is provided through vias 246, 250, and 254 to reach their respective connection points. However, the via 258 corresponding to the outer compartment 224-1 may be located further than the vias 246, 250, and 254, and may be located in the intermediate outer compartment 224-2. In other words, the wiring for the heating element in the outer compartment 224-1 is not provided directly below the outer compartment 224-1. Therefore, additional electrical connections are needed to provide a voltage input to the heating elements in the outer compartment 224-1.

FIG. 3 illustrates an ESC 400 having an electrical connection 404 routed (eg, laterally crossing) within the ceramic layer 408. Although the ceramic layer 408 is shown as a single uniform layer, in some examples the ceramic layer 408 may correspond to a plurality of different layers, one layer among the plurality of layers, and the like. The ESC400 simply includes, by way of example, the outer compartment 410-1, the middle outer compartment 410-2, the middle inner compartment 410-3, and the inner compartment 410-4 (corresponding to the radial outermost compartment of the ESC400). It has a plurality of compartments including the compartment 410). For example, the via 412 in the base plate 416 may be located outside the outer compartment 410-1 of the ESC 400 (eg, in the intermediate outer compartment 410-2), as described above in FIGS. 2A and 2B. The voltage input (eg, wiring) 420 is routed into the ceramic layer 408 through the vias 412 and the heating layer 424. Within the ceramic layer 408, the electrical connection 404 is routed across the ceramic layer 408 towards the connection point 428 in the heating layer 424. Therefore, the voltage input to the heating layer 424 in the outer compartment 410-1 of the ESC is provided through the base plate 416 and the ceramic layer 408. In some examples, the electrical connection 404 corresponds to an electrical trace. In another example, the electrical connection 404 includes wiring. For example, the wiring of the electrical connection 404 may be the same as or different from the wiring of the voltage input 420.

The electrical connection 404 in the ceramic layer 408 may have dimensions with a conductive material and / or low electrical resistance (eg, with respect to the heating element 436 of the heating layer 424). By way of example only, the electrical connection 404 may include, but is not limited to, tungsten, copper, magnesium, palladium, silver, and / or various alloys thereof. On the contrary, the heating element 436 includes, but is not limited to, nickel alloys, iron alloys, tungsten alloys and the like. The heating layer 424 may include polyimide, acrylic, silicone, or the like in which the heating element 436 is embedded.

As shown in the figure, the via 412 is located in the intermediate outer compartment 410-2 and the electrical connection 404 is routed from the intermediate outer compartment 410-2 across the ceramic layer 408 to the outer compartment 410-1 but another. In the example, the via 412 may be located in any one of the compartments 410 and the electrical connection 404 may be routed to any one of the other compartments 410. In some examples, the electrical connection 404 is routed across multiple compartments within compartment 410 (eg, from vias located in intermediate inner compartment 410-3 to outer compartment 410-1). Further, as shown in the figure, the electrical connection 404 is routed from the via in the radial inner compartment to the radial outer compartment, but in another example, the electrical connection 404 is in the radial outer compartment. It is routed from the via to the inner section in the radial direction (for example, from the via located in the outer section 410-1 to the middle inner section 410-3).

Here, with reference to FIGS. 4A and 4B, the ESC450 of the first configuration example according to the principle of the present disclosure is shown. FIG. 4A is a cross-sectional view, and FIG. 4B is a plan view. In this example, the electrical connection 454 (eg, corresponding to the electrical connection 404) is routed through a ceramic layer 458 formed on the heating layer 462. For example, the electrical connection 454 is routed from the intermediate outer compartment of the ESC 450 to the outer compartment. The electrical connection 454 is electrically coupled to the connection point of the heating element 466 using a conductive material 470 (eg, solder, conductive epoxy, etc.).

Here, with reference to FIGS. 5A and 5B, the ESC500 of the second configuration example according to the principle of the present disclosure is shown. 5A is a cross-sectional view and FIG. 5B is a plan view. In this example, the electrical connection 504 is routed through the ceramic layer 508 formed on the heating layer 512. For example, the electrical connection 504 is routed from the intermediate outer compartment of the ESC 500 to the outer compartment. The electrical connection 504 is electrically coupled to the connection point of the heating element 516 using vias 520 filled with a conductive material 524 (eg, solder, conductive epoxy, etc.). For example, the via 520 is formed through the electrical connection 504, the ceramic layer 508, the heating layer 512, and the corresponding regions of the heating element 516 and is filled with the conductive material 524.

Here, with reference to FIGS. 6A and 6B, the ESC600 of the third configuration example according to the principle of the present disclosure is shown. FIG. 6A is a cross-sectional view, and FIG. 6B is a plan view. In this example, the electrical connection 604 is routed through a ceramic layer 608 formed on the heating layer 612. For example, the electrical connection 604 is routed from the intermediate outer compartment of the ESC 600 to the outer compartment. The electrical connection 604 uses a via 620 filled with a conductive material 624 (eg, solder, conductive epoxy, etc.) and a contact pad 628 located between the electrical connection 604 and the heating element 616 to provide a heating element 616. It is electrically coupled to the connection point of. For example, the via 620 is formed through the electrical connection 604, the ceramic layer 608, the heating layer 612, the heating element 616, and the corresponding regions of the contact pad 628 and is filled with the conductive material 624.

As shown, the conductive material 624 is between separate portions of the contact pad 628 (ie, a portion 632 of the contact pad 628 coupled to the electrical connection 604 and a contact pad 628 coupled to the heating element 616. May be provided (with some 636). Parts 632 and 636 of the contact pad 628 may contain the same or different materials. For example, the portion 632 may contain the same material as the electrical connection 604, while the portion 636 contains the same material as the heating element 616. In another example, the contact pad 628 may correspond to a single structure coupled with vias 620 formed through both the electrical connection 604 and the heating element 616.

The above description is merely exemplary and is not intended to limit this disclosure, application, or usage. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure is such that the drawings, the specification, and the following claims reveal other variations. The example is not limited to. It should be understood that one or more steps included in the method may be performed in different order (or at the same time) without altering the principles of the present disclosure. Further, although each of the embodiments is described as having specific features, any one or more of the features described for any of the embodiments of the present disclosure can be incorporated into other embodiments. It can be implemented in any and / or combined with features of any of the other embodiments, even if the combination is not explicitly stated. In other words, the embodiments described above are not mutually exclusive and it is within the scope of the present disclosure to replace one or more embodiments with each other.

Spatial and functional relationships between elements (eg, between modules, between circuit elements, between semiconductor layers) are "connected", "engaged", "coupled", It is described using various terms such as "adjacent", "close", "above", "above", "below", and "placed". When the relationships between the first and second elements are described in this disclosure, unless explicitly stated to be "direct", the relationships are such that the other intervening elements are the first and second elements. It can be a direct relationship that does not exist between the elements, but it can also be an indirect relationship in which one or more intervening elements exist (spatial or functional) between the first and second elements. It is possible. As used herein, the expression "at least one of A, B, and C" is meant to mean logic (A or B or C) using a non-exclusive OR. It should be interpreted and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C".

In some embodiments, the controller is part of the system and the system may be part of the above example. Such systems include semiconductor processing equipment such as one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (such as substrate pedestals, gas flow systems, etc.). Can be equipped. These systems may be integrated with electronic devices for controlling the operation of the system before, during, and after processing the semiconductor substrate. Electronic devices, also referred to as "controllers," can control various components or sub-components of a system. The controller can supply processing gas, temperature setting (eg heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF, depending on the processing requirements and / or system type. This includes matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and operation settings, and board movement in and out of load locks connected or coupled to tools and other moving tools and / or specific systems. The specification may be programmed to control any of the disclosure processes.

In general, a controller receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, and so on, with various integrated circuits, logic, memory, and / or , May be defined as an electronic device with software. An integrated circuit executes a chip in the form of a firmware for storing program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or a program instruction (eg, software). It may include one or more microprocessors or microcontrollers. Program instructions are transmitted to the controller in the form of various individual settings (or program files) and are operating parameters to or to the system to perform specific processing on or for the semiconductor substrate. Is defined. The operating parameters are, in some embodiments, one or more processing steps during the processing of one or more layers of the substrate, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies. May be part of a recipe defined by a processing engineer to achieve.

In some embodiments, the controller is a computer that is integrated with the system, connected to the system, otherwise networked with the system, or combined with the system. It may be part or connected to such a computer. For example, the controller may be in the "cloud" or may be all or part of a fab host computer system that allows remote access to board processing. The computer monitors the current progress of the manufacturing operation by allowing remote access to the system to change the parameters of the current process, set the process according to the current process, or start a new process. You can look up the history of past manufacturing operations, look at trends or performance indicators from multiple manufacturing operations. In some examples, a remote computer (eg, a server) may provide processing recipes to the system over a network (which may include a local network or the Internet). The remote computer may include a user interface that allows input or programming of parameters and / or settings, and the parameters and / or settings are communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of processing performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controllers may be distributed, such as by including one or more separate controllers that are networked and operate for a common purpose (such as the processing and control described herein). .. An example of a distributed controller for this purpose is one or more remotely deployed (such as at the platform level or as part of a remote computer) that collaborate to control processing in the chamber. One or more integrated circuits on the chamber that communicate with the integrated circuits of.

Examples of systems include, but are not limited to, plasma etching chambers or modules, vapor deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical deposition (PVD). Machining of Chambers or Modules, Chemical Deposition (CVD) Chambers or Modules, Atomic Layer Deposition (ALD) Chambers or Modules, Atomic Layer Etching (ALE) Chambers or Modules, Ion Injection Chambers or Modules, Track Chambers or Modules, and Semiconductor Substrates And / or any other semiconductor processing system that may be related to or utilized in manufacturing.

As mentioned above, depending on one or more processing steps performed by the tool, the controller may have other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby. Tools, tools located throughout the factory, main computer, another controller, or tools used to transport materials that carry a container of substrates to or from a tool location and / or load port within a semiconductor manufacturing plant. You may communicate with one or more of.

Claims (13)

A substrate support for a substrate processing system
With multiple heating compartments
With the base plate
With the heating layer arranged on the base plate,
The ceramic layer arranged on the heating layer and
With the wiring provided through the base plate and the heating layer in the ceramic layer in the first compartment of the plurality of heating compartments.
With electrical connections routed from the wiring in the first compartment across the ceramic layer to the second compartment in the plurality of heating compartments and to the heating elements of the heating layer in the second compartment. Substrate support. The substrate support according to claim 1, wherein the electrical connection corresponds to electrical wiring according to a pattern on a printed circuit board. The substrate support according to claim 1, wherein the electrical connection corresponds to a second wiring different from the wiring provided through the base plate. The substrate support according to claim 1, wherein the second compartment is a substrate support arranged on the outer side in the radial direction of the first compartment. The substrate support of claim 1, further comprising vias provided through the base plate, the heating layer, and the ceramic layer in the first compartment, the wiring being routed through the vias. Board support. The substrate support according to claim 1, wherein the electrical connection has a lower electrical resistance than the heating element. The substrate support according to claim 1, wherein the electrical connection is coupled to a connection point of the heating element using at least one of a solder connection and a conductive epoxy. The substrate support according to claim 1, further comprising vias provided through the ceramic layer and the heating layer in the second compartment. The substrate support according to claim 8, wherein the via is filled with a conductive material to connect the electrical connection to the connection point of the heating element. The substrate support according to claim 8, further comprising a contact pad arranged between the electrical connection and the heating element. The substrate support according to claim 10, wherein the contact pad includes a first portion arranged in the ceramic layer and a second portion arranged in the heating layer. The substrate support according to claim 11, wherein the via is a substrate support filled with a conductive material. The substrate support according to claim 12, wherein the conductive material is provided between the first portion of the contact pad and the second portion of the contact pad.

Images