CN107426837A - The connection being laminated between heater and heater voltage input - Google Patents
The connection being laminated between heater and heater voltage input Download PDFInfo
- Publication number
- CN107426837A CN107426837A CN201710321618.1A CN201710321618A CN107426837A CN 107426837 A CN107426837 A CN 107426837A CN 201710321618 A CN201710321618 A CN 201710321618A CN 107426837 A CN107426837 A CN 107426837A
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- Prior art keywords
- heating
- substrate
- zone
- substrate support
- electrical connection
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- 238000010438 heat treatment Methods 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 239000000919 ceramic Substances 0.000 claims abstract description 53
- 239000004020 conductor Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 27
- 238000012545 processing Methods 0.000 description 19
- 210000002381 plasma Anatomy 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002826 coolant Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000002320 enamel (paints) Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005007 materials handling Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 oxide Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005439 thermosphere Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
Abstract
The invention provides the connection between lamination heater and heater voltage input.Substrate support for lining treatment system includes multiple heating regions, substrate, the zone of heating being arranged on substrate, the ceramic layer being arranged on zone of heating and the wiring by being provided in substrate, zone of heating and the ceramic layer of the first area entered in multiple heating regions.Electrically connect and be routed to the second area of multiple heating regions and to the heating element heater in the zone of heating in second area from the wiring in the first area of multiple heating regions across ceramic layer.
Description
The cross reference of related application
This application claims the U.S. Provisional Application No.62/334,097 submitted on May 10th, 2016 and in May, 2016
The U.S. Provisional Application No.62/334,084 submitted for 10th rights and interests.
The application is related in U.S. Patent application No. [xx/xxx, xxx] (the USPTO reference numbers 4024- submitted on the same day
2US).The complete disclosure of above-mentioned application is incorporated herein by reference.
Technical field
This disclosure relates to lining treatment system, more particularly relate to control system and the side of substrate support temperature
Method.
Background technology
Background description provided herein is in order to which the purpose of the context of the disclosure is usually presented.The hair named at present
The work of a person of good sense, will not be considered as otherwise existing skill when the background section and this specification are in application
In degree described in the aspect of art, the prior art for the disclosure both ambiguously or had not impliedly been recognized as.
Lining treatment system can be used for the substrate of processing such as semiconductor wafer etc.The example that can be carried out on substrate
Property technique include but is not limited to chemical vapor deposition (CVD), ald (ALD), conductor etch and/or other etchings, heavy
Product or cleaning procedure.Substrate can be arranged in substrate support (such as pedestal, electrostatic card in the process chamber of lining treatment system
Disk (ESC) etc.) on.During etching, including the admixture of gas of one or more precursors be directed into process chamber, and
And chemical reaction can be triggered using plasma.
Such as ESC etc substrate support can include the ceramic layer for being configured to support substrate.For example, in process phase
Between, substrate can be clamped to ceramic layer.Zone of heating can be arranged between ceramic layer and the substrate of substrate support.For example,
Zone of heating can be the ceramic heating plate for including heating element heater, wiring etc.., can be in process phase by controlling the temperature of heating plate
Between control substrate temperature.
The content of the invention
A kind of substrate support for lining treatment system includes multiple heating regions, substrate, is arranged on substrate
Zone of heating, the ceramic layer being arranged on zone of heating and by substrate, zone of heating and enter the of multiple heating regions
Ceramic layer in one region and the wiring provided.Electrically connect from the first area wiring across the ceramic layer to described
The second area of multiple heating regions and in the zone of heating of the second area heating element heater wiring.
In further feature, electrical connection corresponds to electric trace.Electrical connection, which corresponds to, is different from what is provided by the substrate
Second wiring of the wiring.Second area is located at the radial outside of first area.Electrical connection has the electricity lower than heating element heater
Resistance.
In further feature, substrate support is included by the substrate, the zone of heating and in the first area
The through hole that provides of the ceramic layer, and the wiring is connected up by the through hole.The electrical connection using solder connection and
At least one tie point for being coupled to the heating element heater in conductive epoxy resin.
In other further feature, substrate support is included by described in the ceramic layer and the second area
The through hole that zone of heating provides.The through hole is filled with the conduction material of the tie point for electrically connecting and being coupled to the heating element heater
Material.Substrate support includes the contact pad being arranged between the electrical connection and the heating element heater.Contact pad includes cloth
Put the Part I in the ceramic layer and the Part II being arranged in the zone of heating.The through hole is filled with conduction material
Material.Conductive material is arranged between the Part I of contact pad and the Part II of contact pad.
Other scope of applications of the disclosure will become apparent from detail specifications, claims and accompanying drawing.In detail
The purpose that thin description and specific embodiment are merely to illustrate that, it is not intended to limit the scope of the present disclosure.
The some aspects of the present invention can be described as follows：
1. a kind of substrate support for lining treatment system, the substrate support includes：
Multiple heating regions；
Substrate；
The zone of heating of arrangement on the substrate；
The ceramic layer being arranged on the zone of heating；
Pass through the substrate, the zone of heating and the ceramics that enter in the first area of the multiple heating region
The wiring that layer provides；
From second area of the wiring across the ceramic layer to the multiple heating region in the first area and to institute
State the electrical connection of the heating element heater wiring in the zone of heating of second area.
2. according to the substrate support described in clause 1, wherein the electrical connection corresponds to electric trace.
3. according to the substrate support described in clause 1, wherein the electrical connection, which corresponds to, is different from what is provided by the substrate
Second wiring of the wiring.
4. according to the substrate support described in clause 1, wherein the second area is located at the radial outside of the first area.
5. according to the substrate support described in clause 1, in addition to by the substrate, the zone of heating and in the first area
In the ceramic layer provide through hole, wherein the wiring is connected up by the through hole.
6. according to the substrate support described in clause 1, wherein the electrical connection has the resistance lower than the heating element heater.
7. according to the substrate support described in clause 1, wherein the electrical connection is used in solder connection and conductive epoxy resin
At least one tie point for being coupled to the heating element heater.
8. according to the substrate support described in clause 1, in addition to by described in the ceramic layer and the second area plus
The through hole that thermosphere provides.
9. according to the substrate support described in clause 8, wherein the through hole is filled with is coupled to the heating by the electrical connection
The conductive material of the tie point of element.
10. according to the substrate support described in clause 8, in addition to it is arranged in connecing between the electrical connection and the heating element heater
Touch pad.
11. according to the substrate support described in clause 10, wherein the contact pad includes being arranged in the in the ceramic layer
A part and the Part II being arranged in the zone of heating.
12. according to the substrate support described in clause 11, wherein the through hole is filled with conductive material.
13. according to the substrate support described in clause 12, wherein the conductive material is arranged on described the of the contact pad
Between the Part II of a part of and described contact pad.
Brief description of the drawings
The disclosure will be more fully understood from the detailed description and the accompanying drawings, wherein：
Fig. 1 is the functional block diagram according to the illustrative substrate processing system including substrate support of the principle of the disclosure；
Fig. 2A is the exemplary electrostatic chuck according to the principle of the disclosure；
Fig. 2 B show region and the Thermal Control Element of the exemplary electrostatic chuck of the principle according to the disclosure；
Fig. 3 shows the exemplary wiring of the electrical connection of the ceramic layer by electrostatic chuck of the principle according to the disclosure；
Fig. 4 A and 4B show the exemplary connection of first between ceramic layer and zone of heating according to the principle of the disclosure；
Fig. 5 A and 5B show the exemplary connection of second between ceramic layer and zone of heating according to the principle of the disclosure；
With
Fig. 6 A and 6B show the 3rd exemplary connection between ceramic layer and zone of heating according to the principle of the disclosure.
In the accompanying drawings, reference may be reused to identify similar and/or identical element.
Embodiment
Such as substrate support of electrostatic chuck (ESC) etc can include one or more heating regions (for example, multi-region
Domain ESC).ESC can include each heating element heater in each region for zone of heating.Heating element heater is controlled in respective area
Desired set point temperatures (setpoint temperature) are substantially realized in each in domain.
Zone of heating can include the lamination heating plate being arranged between the upper ceramic layer of substrate support and substrate.Heating plate
Including the multiple heating element heaters being arranged in ESC whole region.Heating element heater includes electric trace or other wiring, the electric trace
Or other wiring receive the control source provided from the voltage source below ESC by substrate.For example, substrate can include and heating
One or more through holes (for example, hole or entrance) of the tie point alignment of heating element heater in plate.Wiring passes through logical in substrate
Hole is connected between voltage source and the tie point of heating element heater.
General it is desired that through hole and the corresponding tie point by the wiring that through hole connects up as close to heating element heater, to keep away
Open heater exclusionary zone (that is, the region that heating element heater can not position) and reduce temperature unevenness.For example, through hole can position
In the underface of tie point.However, in some ESC, various architectural features may interfere with most ideal position offer through hole, connect
Line and other heating element heater parts.Therefore, through hole and corresponding wiring can be spaced further apart and/or can be located at ESC mesh
Mark the outside in region.For example, in interior zone, middle inner region, intermediary outside region and the ESC of perimeter,
It can be located at for the through hole of perimeter and wiring below intermediary outside region, so as to cause asymmetric heating mode and temperature
It is uneven.
According to the system and method for the principle of the disclosure provide the ceramic layer above by heating plate in control source
Connection between heating plate.In other words, wiring is that pottery is set up and entered by the through hole in substrate and zone of heating
In enamel coating.In ceramic layer, wiring (can include electric trace, contact etc.) is horizontal (i.e. horizontal towards the expectation tie point of zone of heating
To) wiring, then it is expected to return downward in zone of heating at tie point.Therefore, the electricity between through hole and corresponding tie point
Connection is embedded in ceramic layer, and need not be minimized for control source and tie point between through hole and wiring
Distance.By this way, design flexibility (for example, position of through hole) is improved through the electrical connection wiring of ceramic layer, reduced
Heater exclusionary zone, and improve whole ESC temperature homogeneity.
Referring now to Figure 1, show illustrative substrate processing system 100.Only as an example, lining treatment system 100 can
For being etched using RF plasmas and/or other suitable substrate processings.Lining treatment system 100 includes process chamber
102, it surrounds other parts of substrate processing chambers 100 and includes RF plasmas.Substrate processing chambers 100 include Top electrode
104 and substrate support 106 (such as electrostatic chuck (ESC)).During operation, substrate 108 is arranged in substrate support 106
On.Although show specific substrate processing system 100 and room 102 as an example, the principle of the disclosure can apply to other
The lining treatment system of type and room, such as original position produce the lining treatment system of plasma, can realize remote plasma
Body produces and transmitted lining treatment system of (such as using microwave tube) etc..
Only as an example, Top electrode 104 can include introducing and the shower nozzle 109 of distribution process gas.Shower nozzle 109 can wrap
Bar portion is included, the bar portion includes being connected to one end of the top surface of process chamber.Base portion substantially cylindrical, and with process chamber
Top surface opening position spaced apart extends radially outwardly from the opposite end of bar portion.The surface or face towards substrate of the base portion of shower nozzle
Plate is flowed through including multiple holes, process gas or purification gas by this some holes.Or Top electrode 104 can include conductive plate, and
And process gas can be introduced in another way.
Substrate support 106 includes the electrically-conductive backing plate 110 as bottom electrode.Substrate 110 supports ceramic layer 111, and adds
Hot plate 112 is arranged between substrate 110 and ceramic layer 111.For example, heating plate 112 can correspond to the multizone heating of stacking
Plate.Thermoresistance layer 114 (for example, bonding layer) can be arranged between heating plate 112 and substrate 110.Substrate 110 can include being used for
Cooling agent is set to flow through one or more coolant channels 116 of substrate 110.
RF occurs system 120 and produces RF voltages and by RF voltage outputs to Top electrode 104 and bottom electrode (for example, substrate branch
One of the substrate 110 of frame 106).The other of Top electrode 104 and substrate 110 can be DC earthing, AC earth or
Float.Only as an example, system 120, which occurs, for RF can include RF voltage generators 122, it is produced by matching and distributing network
124 are fed to the RF voltages of Top electrode 104 or substrate 110.In other examples, plasma can inductively or be remotely produced
Body.Although as the example shows, RF generations system 120 corresponds to capacitance coupling plasma (CCP) system, the original of the disclosure
Reason can also be realized in other suitable systems, other suitable systems only for example, for example, Transformer Coupled Plasma
Body (TCP) system, CCP cathod systems, Remote microwave plasma generation and transmission system etc..
Gas delivery system 130 includes one or more gas source 132-1,132-2 ... and 132-N (is referred to as gas
Source 132), wherein N is greater than zero integer.Gas source provides one or more precursors and its mixture.Gas source can also be for
Answer purification gas.Vaporized precursor can also be used.Gas source 132 by valve 134-1,134-2 ... and 134-N (is referred to as valve
134) and mass flow controller 136-1,136-2 ... and 136-N (being referred to as mass flow controller) is connected to manifold
140.The output of manifold 140 is fed to process chamber 102.Only as an example, the output of manifold 140 is fed to shower nozzle 109.
Temperature controller 142 can provide control source to the heating element heater 144 being arranged in heating plate 112.For example, plus
Thermal element 144 can include but is not limited to：Heating element heater and/or leap corresponding to the regional in multizone heating plate is more
The micro-heating element array of multiple regions arrangement of region heating plate.Temperature controller 142 can be used for controlling multiple heating
Element 144 is to control the temperature of substrate support 106 and substrate 108.Passed through according to the substrate support 106 of the principle of the disclosure
Ceramic layer 111 connects up the electrical connection for heating element heater 144, as described in more detail below.
Temperature controller 142 can be connected with cooling agent component 146 to control the coolant flow by passage 116.It is for example, cold
But agent component 146 may include cooling medium pump and holder.Temperature controller 142 operates cooling agent component 146 optionally to make
Cooling agent flows through passage 116 to cool down substrate support 106.
Valve 150 and pump 152 can be used for discharging reactant from process chamber 102.System controller 160 can be used at control substrate
The part of reason system 100.Robot 170 can be used for substrate being transported on substrate support 106, and can be from substrate supports
Part 106 removes substrate.For example, robot 170 can transmit substrate between substrate support 106 and loadlock 172.Although show
Go out for single controller, but temperature controller 142 can be realized in system controller 160.
With reference now to Fig. 2A and 2B, exemplary ESC 200 is shown.Temperature controller 204 is electrically connected via one or more
208 are connect to communicate with ESC 200.For example, electrical connection 208 can include but is not limited to be used to optionally control heating element heater 212-
1,212-2,212-3 and 212-4 (being referred to as heating element heater 212) connection and for receive come from one or more regional temperatures
The connection of the temperature feedback of sensor 220.
As illustrated, ESC 200 is multizone ESC, it includes region 224-1, and 224-2,224-3 and 224-4 (are referred to as
Region 224), these regions are referred to alternatively as perimeter, intermediary outside region, middle inner region and interior zone.Outside area
Domain can correspond to most external region.Although being shown with four concentric zones 224, in one embodiment, ESC 200 can be with
Including one, two, three or more than four regions 224.The shape in region 224 can change.For example, region 224 can be by
It is provided as fan-shaped or another grid-like arrangement.Only as an example, each region 224 includes the phase in zone temperature sensor 220
Answer one and corresponding one in heating element heater 212.In various embodiments, each region 224 can have more than one temperature
Sensor 220.
ESC 200 includes：Substrate 228, it includes coolant channel 232；Form the thermoresistance layer 236 on substrate 228；Shape
Into the multizone ceramic heating plate 240 on thermoresistance layer 236；With upper ceramic layer 242 of the formation in heating plate 240.Using logical
Cross the wiring that substrate 228 and ceramic layer 242 connect up and control source is provided from temperature controller 204 to heating element heater 212.
Temperature controller 204 controls heating element heater 212 according to desired set point temperatures.For example, temperature controller 204
The set point temperatures in (for example, system controller 160 as shown in Figure 1) one or more regions 224 can be received.It is for example, warm
Degree controller 204 can be received for the same settings of all or some the point temperature in region 224 and/or for region 224
In the different respective settings point temperature of each.The set point temperatures in each region 224 can between different process with
And change between the different step of each technique.
Temperature controller 204 is each to control based on the respective settings point temperature provided by sensor 220 and temperature feedback
The heating element heater 212 in region 224.For example, temperature controller 204 individually adjusts the power for being supplied to each heating element heater 212
(for example, electric current or dutycycle) realizes the set point temperatures at each sensor 220.Heating element heater 212 can each include
Single resistance coil or the other structures represented by Fig. 2 B dotted line.Therefore, a shadow in heating element heater 212 is adjusted
Ring the temperature of whole respective regions 224, and can also be in influence area 224 other regions.Sensor 220 can be only each area
The Part portions in domain 224 provide temperature feedback.Only as an example, sensor 220 can be located at predefining for each region 224
For the part with the maximally related each region 224 of the mean temperature in the region 224.
As illustrated, corresponding through hole 246,250 and 254 and corresponding control source are arranged on intermediary outside region
In 224-2, middle inner region 224-3 and interior zone 224-4.As used herein, " through hole " is typically referred to by such as base
The opening of a certain structure of plate 228 etc, port etc., and " wiring " refers to the conductive material in through hole.Although only as an example,
Through hole is shown in couples in ad-hoc location, but can implement the quantity of any suitable position and/or through hole.For example, through hole
246th, 250 and 254 provided by substrate 228, wiring is provided by through hole 246,250 and 254 and arrives corresponding tie point.However,
It can be located at the position more farther than through hole 246,250 and 254 corresponding to perimeter 224-1 through hole 258, and can be located at
In the 224-2 of intermediary outside region.In other words, the wiring of perimeter 224-1 heating element heater is not set directly at outside area
Domain 224-1 underface.Therefore, it is necessary to which extra electrical connection to perimeter 224-1 heating element heater to provide control source.
Fig. 3 shows showing with the electrical connection 404 connected up in (for example, being horizontally through, in the horizontal) ceramic layer 408
Example property ESC 400.Although ceramic layer 408 is shown as single conforming layer, in some instances, ceramic layer 408 can correspond to
One layer etc. in multiple discrete layers, multilayer.ESC 400 has multiple regions, only for example, including perimeter 410-1
(for example, radially side region corresponding to ESC 400), intermediary outside region 410-2, middle inner region 410-3 and interior
Portion region 410-4, these regions may be collectively referred to as region 410.For example, the through hole 412 in substrate 416 can be as above in Fig. 2A
It is located at described in 2B in ESC 400 perimeter 410-1 outside (for example, in the 410-2 of intermediary outside region).Voltage
Input (for example, wiring) 420 is connected up and entered in ceramic layer 408 through through hole 412 and zone of heating 424.In ceramic layer 408
Interior, electrical connection 404 connects up through ceramic layer 408 towards the tie point 428 in zone of heating 424.Therefore, it is input to ESC outside
The voltage of zone of heating 424 in the 410-1 of region is provided by substrate 416 and ceramic layer 408.In some instances, 404 are electrically connected
Corresponding to electric trace.In other examples, electrical connection 404 includes wiring.For example, the wiring of electrical connection 404 can be defeated with voltage
Enter 420 wiring it is identical or different.
Electrical connection 404 in ceramic layer 408 can include having low resistance (such as the heating unit relative to zone of heating 424
Part 436) conductive material and/or size.For example, electrical connection 404 can include but is not limited to tungsten, copper, magnesium, palladium, silver and/or its
Various alloys.On the contrary, heating element heater 436 can include but is not limited to nickel alloy, ferroalloy, tungsten alloy etc..Zone of heating 424 can be with
Including polyimides, acrylic acid, silicones etc., heating element heater 436 is embedded in.
Although as illustrated, through hole 412 is located in the 410-2 of intermediary outside region, and electrically connects 404 and cross over ceramic layer
408 are routed to perimeter 410-1 from middle perimeter 410-2, but in other examples, through hole 412 can be located at region
In any one in 410, and electrically connect 404 any one that can be routed in other regions 410.In some examples
In, electrical connection 404 is across multiple regions in regions 410 (for example, from the through hole in positioned at middle inner region 410-3 to outer
Portion region 410-1) wiring.In addition, although as illustrated, electrical connection 404 is routed to radially from the through hole in radially-inwardly region
Outside area routing, but in other examples, electrical connection 404 is routed to radially inner area from the through hole in radially outward region
Domain (for example, from through hole in positioned at perimeter 410-1 to middle inner region 410-3).
With reference now to Fig. 4 A and 4B, the first exemplary arrangement of the ESC 450 according to the principle of the disclosure is shown.Fig. 4 A
It is cross-sectional view, Fig. 4 B are plans.In this example, electrical connection 454 (for example, corresponding to electrical connection 404) is conducted through
Form the ceramic layer 458 on zone of heating 462.For example, electrical connection 454 is from ESC 450 intermediary outside area routing to outside
Region.Electrical connection 454 is electrically coupled to heating element heater 466 using conductive material 470 (for example, solder, conductive epoxy resin etc.)
Tie point.
With reference now to Fig. 5 A and Fig. 5 B, the ESC500 of principle according to the disclosure the second exemplary arrangement is shown.Figure
5A is cross-sectional view, and Fig. 5 B are plans.In this example, electrical connection 504 is by forming the ceramic layer on zone of heating 512
508 wirings.For example, electrical connection 504 is from ESC 500 intermediary outside area routing to perimeter.Electrical connection 504 uses filling
The through hole 520 for having conductive material 524 (for example, solder, conductive epoxy resin etc.) is electrically coupled to the tie point of heating element heater 516.
For example, through hole 520 can pass through the respective regions shape in electrical connection 504, ceramic layer 508, zone of heating 512 and heating element heater 516
Into then being filled with conductive material 524.
With reference now to Fig. 6 A and 6B, the 3rd exemplary arrangement of the ESC 600 according to the principle of the disclosure is shown.Fig. 6 A are
Cross-sectional view, Fig. 6 B are plans.In this example, electrical connection 604 is by forming the cloth of ceramic layer 608 on zone of heating 612
Line.For example, electrical connection 604 is from ESC 600 intermediary outside area routing to perimeter.Electrical connection 604 is used to be filled with and led
The through hole 620 of electric material 624 (for example, solder, conductive epoxy resin etc.) and be arranged in electrical connection 604 and heating element heater 616 it
Between contact pad 628 be electrically coupled to the tie point of heating element heater 616.For example, through hole 620 can pass through electrical connection 604, ceramics
Respective regions in layer 608, zone of heating 612, heating element heater 616 and contact pad 628 are formed, and are then filled with conductive material
624。
As illustrated, conductive material 624 can be arranged between the separate section of contact pad 628 (that is, in contact pad
628 part 632 for being coupled to electrical connection 604 and contact pad 628 are coupled between the part 636 of heating element heater 616).
The part 632 and 636 of contact pad 628 can include identical or different material.For example, part 632 can include with being electrically connected
604 identical materials are connect, and part 636 includes and the identical material of heating element heater 616.In other examples, contact pad 628
The single structure for being coupled to both electrical connection 604 and heating element heater 616 using through hole 620 is can correspond to, the through hole 620 passes through
They are formed.
Description above is substantially merely illustrative, and is in no way intended to limit the disclosure, its application or purposes.This
Disclosed teaching extensively may be realized in various forms.Therefore, although the disclosure includes particular example, the true model of the disclosure
Enclosing so to limit, because in studying accompanying drawing, specification and appended, other modifications will become aobvious and easy
See.It should be appreciated that in the case where not changing the principle of the disclosure, one or more of method step can be with different suitable
Sequence (or simultaneously) perform.In addition, although each embodiment is described above as having some features, relative to this
Any one or more in those features of disclosed any embodiment description can be real in any other embodiment
The existing and/or combinations of features with any other embodiment, is not expressly recited such even if the combination yet.In other words, institute
What the embodiment of description did not excluded each other, and the mutual exchange of one or more embodiments is maintained at the model of the disclosure
In enclosing.
The space of (for example, between module, circuit element, semiconductor layer etc.) and functional relationship use include between element
" connection ", " engagement ", " connection ", " adjacent ", " neighbouring ", " ... on ", " top ", " lower section " and " setting " etc it is various
Term is described.When the relation between first and second elements described in disclosed above, unless explicitly described as " straight
Connect ", otherwise this relation can be present in without other intermediary elements it is direct between first and second element
Relation be present in first He but it is also possible to be wherein one or more intermediary elements (or spatially or functionally)
Indirect relation between second element.As it is used herein, at least one in phrase A, B and C should be interpreted to refer to
Using the logic of nonexcludability or the logic (A or B or C) of (OR), and be not construed as refer to " it is at least one in A, in B
It is at least one and at least one in C ".
In some embodiments, controller is a part for system, and a part of of the system can be above-mentioned embodiment party
A part for formula.Such system can include semiconductor processing equipment, and semiconductor processing equipment includes one or more process
Instrument, one or more rooms, one or more platforms for processing, and/or specific processing component (substrate pedestal, gas
Running system etc.).These systems can integrate with electronic device, so as to before the processing of Semiconductor substrate or substrate, period or
The operation of these systems is controlled afterwards.Electronic device can be referred to as " controller ", and it can control one or more systems
Various assemblies or subdivision.According to processing requirement and/or the type of system, controller can be programmed, to control institute of the present invention
It is more any in disclosed technique, including the conveying of control process gas, the setting of temperature (for example, heating and/or cooling),
The setting of pressure, the setting of vacuum, the setting of power, the setting of radio frequency (RF) generator, the settings of RF match circuits, frequency
Set, the setting of flow rate, setting, the setting of position and operation, the disengaging instrument of substrate and other meanss of delivery of fluid conveying
And/or be connected to particular system or the transmission with the load lock of particular system interface.
In broad terms, controller can be defined as receive instruction, send instruction, control operation, enable clean operation,
The electronic device with various integrated circuits, logic, memory, and/or software of enabled terminal measurement etc..These integrated circuits
Chip that the storage program of form of firmware instructs can be included, digital signal processor (DSP), be defined as application specific integrated circuit
(ASIC) chip and/or the one or more microprocessors or microcontroller of execute program instructions (for example, software).Program refers to
Order can be instruction that controller or system are transferred in the form of various single settings (or program file), it is described set (or
Program file) define the operating parameter that particular procedure is carried out on a semiconductor substrate or for Semiconductor substrate.In some implementations
In mode, the operating parameter can be by process engineer define with complete the one or more of substrate (kind) layer, material,
Metal, oxide, silicon, silica, surface, one or more of the manufacturing process processing step of circuit and/or tube core
A part for formula.
In some embodiments, controller can pass through network connection system in other words with the system integration, coupling
Or the computer of combinations thereof a part or with the computer couple.For example, controller can be in " high in the clouds " either
Chip factory (fab) host computer system all or part of, they can allow remotely access substrate processing.Computer can enable
Remote access to system checks the history of past manufacturing operation, checks multiple systems to monitor the currently processed of manufacturing operation
The trend or performance standard of manufacturing operation, to change currently processed parameter, processing step is set with follow current processing or
Start new technique.In some instances, remote computer (for example, server) can provide a system to technique by network and match somebody with somebody
Side, network can include local network or internet.Remote computer can include allowing input or program parameters and/or setting
User interface, the parameter of these inputs or programming and/or set and then from remote computer be sent to system.In some examples
In, the instruction of controller receiving data form, these indicate each place that will be performed during one or more operate
Manage the parameter of step.It should be appreciated that these parameters can be directed to the technology type that will be performed and tool types, controller quilt
It is configured to connect or controls the tool types.Therefore, as described above, controller can be for example by including one or more discrete
Controller and be distributed, these discrete controllers are by network connection together and towards common target (for example, this hair
Bright described technique and control) work.The example of distributed director for these purposes can be remote with one or more
The indoor one or more of journey integrated circuit (for example, in plateau levels or part as remote computer) communication integrates
Circuit, they are combined to control chamber processes.
The system of example can include but is not limited to, plasma etch chamber or module (use feeling should or Capacitance Coupled etc.
Gas ions), settling chamber or module, spin rinse room or module, metal plating room or module, clean room or module, Chamfer Edge
Etching chamber or module, physical vapour deposition (PVD) (PVD) room or module, chemical vapor deposition (CVD) room or module, ald
(ALD) room or module, atomic layer etch (ALE) room or module, ion implantation chamber or module, track chamber or module and half
Any other semiconductor processing system that can be associated or use in the preparation and/or manufacture of conductor substrate.
As described above, the one or more processing steps that will be performed according to instrument, controller can be with one or more
Other instrument circuits or module, other tool assemblies, combination tool, other tools interfaces, adjacent instrument, adjacent instrument,
Instrument, main frame, another controller in whole factory or the container of substrate is being to and from semiconductor fabrication factory
In the materials handling carried of tool location and/or load port in the instrument communications that use.
Claims (10)
1. a kind of substrate support for lining treatment system, the substrate support includes：
Multiple heating regions；
Substrate；
The zone of heating of arrangement on the substrate；
The ceramic layer being arranged on the zone of heating；
Pass through the substrate, the zone of heating and the ceramics that enter in the first area of the multiple heating region
The wiring that layer provides；
From second area of the wiring across the ceramic layer to the multiple heating region in the first area and to institute
State the electrical connection of the heating element heater wiring in the zone of heating of second area.
2. substrate support according to claim 1, wherein the electrical connection corresponds to electric trace.
3. substrate support according to claim 1, it is different from carrying by the substrate wherein the electrical connection corresponds to
Second wiring of the wiring supplied.
4. substrate support according to claim 1, wherein the footpath that the second area is located at the first area is outside
Side.
5. substrate support according to claim 1, in addition to by the substrate, the zone of heating and described first
The through hole that the ceramic layer in region provides, wherein the wiring is connected up by the through hole.
6. substrate support according to claim 1, wherein the electrical connection has the resistance lower than the heating element heater.
7. substrate support according to claim 1, wherein the electrical connection uses solder connection and conductive epoxy resin
In at least one tie point for being coupled to the heating element heater.
8. substrate support according to claim 1, in addition to pass through the institute in the ceramic layer and the second area
The through hole of zone of heating offer is provided.
9. substrate support according to claim 8, wherein the through hole is described filled with the electrical connection is coupled to
The conductive material of the tie point of heating element heater.
10. substrate support according to claim 8, in addition to be arranged between the electrical connection and the heating element heater
Contact pad.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662334084P | 2016-05-10 | 2016-05-10 | |
| US201662334097P | 2016-05-10 | 2016-05-10 | |
| US62/334,097 | 2016-05-10 | ||
| US62/334,084 | 2016-05-10 | ||
| US15/586,203 US10667379B2 (en) | 2016-05-10 | 2017-05-03 | Connections between laminated heater and heater voltage inputs |
| US15/586,203 | 2017-05-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107426837A true CN107426837A (en) | 2017-12-01 |
| CN107426837B CN107426837B (en) | 2021-09-21 |
Family
ID=60338892
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710321183.0A Active CN107393847B (en) | 2016-05-10 | 2017-05-09 | Laminated heater with different heater trace materials |
| CN201710321618.1A Active CN107426837B (en) | 2016-05-10 | 2017-05-09 | Connection between laminated heater and heater voltage input |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710321183.0A Active CN107393847B (en) | 2016-05-10 | 2017-05-09 | Laminated heater with different heater trace materials |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP6960763B2 (en) |
| KR (2) | KR102329513B1 (en) |
| CN (2) | CN107393847B (en) |
| TW (2) | TWI744323B (en) |
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| JP7017957B2 (en) * | 2018-03-14 | 2022-02-09 | 日本特殊陶業株式会社 | Holding device |
| CN118360588A (en) * | 2018-07-05 | 2024-07-19 | 朗姆研究公司 | Dynamic temperature control of substrate support in substrate processing system |
| US11183400B2 (en) | 2018-08-08 | 2021-11-23 | Lam Research Corporation | Progressive heating of components of substrate processing systems using TCR element-based heaters |
| WO2020112608A1 (en) * | 2018-11-30 | 2020-06-04 | Lam Research Corporation | Ceramic pedestal with multi-layer heater for enhanced thermal uniformity |
| US20200253409A1 (en) * | 2019-02-08 | 2020-08-13 | Lexmark International, Inc. | Cooking device having a cooking vessel and a ceramic heater |
| WO2020263719A1 (en) * | 2019-06-24 | 2020-12-30 | Lam Research Corporation | Temperature control of a multi-zone pedestal |
| KR102639158B1 (en) * | 2019-07-23 | 2024-02-22 | 삼성전자주식회사 | Wafer processing apparatus, and wafer processing method using the same |
| US11515190B2 (en) * | 2019-08-27 | 2022-11-29 | Watlow Electric Manufacturing Company | Thermal diffuser for a semiconductor wafer holder |
| TWI710298B (en) * | 2019-11-06 | 2020-11-11 | 台灣愛司帝科技股份有限公司 | Interposer board having heating function and electronic device |
| CN114423101B (en) * | 2020-10-28 | 2024-01-09 | 汉达精密电子(昆山)有限公司 | Infrared heating device with photomask plate |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6960763B2 (en) | 2021-11-05 |
| CN107393847A (en) | 2017-11-24 |
| KR20170126803A (en) | 2017-11-20 |
| KR20170126802A (en) | 2017-11-20 |
| TW201806441A (en) | 2018-02-16 |
| JP6907018B2 (en) | 2021-07-21 |
| CN107426837B (en) | 2021-09-21 |
| KR102329513B1 (en) | 2021-11-23 |
| CN107393847B (en) | 2024-02-02 |
| JP2017216440A (en) | 2017-12-07 |
| TW201802947A (en) | 2018-01-16 |
| KR102360248B1 (en) | 2022-02-07 |
| JP2017216439A (en) | 2017-12-07 |
| TWI744323B (en) | 2021-11-01 |
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