KR102324687B1 - 광학 검사 결과들로부터 형성한 계측 가이드 검사 샘플 - Google Patents

광학 검사 결과들로부터 형성한 계측 가이드 검사 샘플 Download PDF

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KR102324687B1
KR102324687B1 KR1020197035756A KR20197035756A KR102324687B1 KR 102324687 B1 KR102324687 B1 KR 102324687B1 KR 1020197035756 A KR1020197035756 A KR 1020197035756A KR 20197035756 A KR20197035756 A KR 20197035756A KR 102324687 B1 KR102324687 B1 KR 102324687B1
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wafer
metrology
measurements
inspection
interpolation
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KR20190138891A (ko
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카우쉭 사
앤드류 제임스 크로스
안토니오 마니
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케이엘에이 코포레이션
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    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020197035756A 2017-05-05 2018-05-04 광학 검사 결과들로부터 형성한 계측 가이드 검사 샘플 Active KR102324687B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762502459P 2017-05-05 2017-05-05
US62/502,459 2017-05-05
US15/671,230 US10598617B2 (en) 2017-05-05 2017-08-08 Metrology guided inspection sample shaping of optical inspection results
US15/671,230 2017-08-08
PCT/US2018/031002 WO2018204731A1 (en) 2017-05-05 2018-05-04 Metrology guided inspection sample shaping from optical inspection results

Publications (2)

Publication Number Publication Date
KR20190138891A KR20190138891A (ko) 2019-12-16
KR102324687B1 true KR102324687B1 (ko) 2021-11-10

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KR1020197035756A Active KR102324687B1 (ko) 2017-05-05 2018-05-04 광학 검사 결과들로부터 형성한 계측 가이드 검사 샘플

Country Status (6)

Country Link
US (1) US10598617B2 (https=)
JP (1) JP6931084B2 (https=)
KR (1) KR102324687B1 (https=)
CN (1) CN110582842B (https=)
TW (1) TWI750368B (https=)
WO (1) WO2018204731A1 (https=)

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US10679333B2 (en) * 2018-03-14 2020-06-09 Kla-Tencor Corporation Defect detection, classification, and process window control using scanning electron microscope metrology
US12038271B2 (en) * 2020-01-07 2024-07-16 Nova Ltd Detecting outliers and anomalies for OCD metrology machine learning
US11967060B2 (en) * 2020-08-25 2024-04-23 Kla Corporation Wafer level spatial signature grouping using transfer learning
US12443840B2 (en) 2020-10-09 2025-10-14 Kla Corporation Dynamic control of machine learning based measurement recipe optimization
US20240319617A1 (en) * 2021-07-13 2024-09-26 Asml Holding N.V. Metrology systems with phased arrays for contaminant detection and microscopy
US20230317528A1 (en) * 2022-03-31 2023-10-05 Mellanox Technologies, Ltd. Efficient Semiconductor Metrology Using Machine Learning
CN121586867A (zh) * 2023-07-24 2026-02-27 Asml荷兰有限公司 减少用于计算引导检查的工艺配方时间的多器件训练流程

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US20150029499A1 (en) 2013-07-25 2015-01-29 Kla-Tencor Corporation Auto-focus system and methods for die-to-die inspection
US20170059491A1 (en) 2015-08-24 2017-03-02 Kla-Tencor Corporation Determining One or More Characteristics of a Pattern of Interest on a Specimen

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US6171737B1 (en) 1998-02-03 2001-01-09 Advanced Micro Devices, Inc. Low cost application of oxide test wafer for defect monitor in photolithography process
US6121156A (en) 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6408219B2 (en) 1998-05-11 2002-06-18 Applied Materials, Inc. FAB yield enhancement system
US6744266B2 (en) 2000-10-02 2004-06-01 Applied Materials, Inc. Defect knowledge library
US6701259B2 (en) 2000-10-02 2004-03-02 Applied Materials, Inc. Defect source identifier
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US7207017B1 (en) 2004-06-10 2007-04-17 Advanced Micro Devices, Inc. Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results
US7853920B2 (en) 2005-06-03 2010-12-14 Asml Netherlands B.V. Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7962866B2 (en) * 2006-12-29 2011-06-14 Cadence Design Systems, Inc. Method, system, and computer program product for determining three-dimensional feature characteristics in electronic designs
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US20110170091A1 (en) 2010-01-11 2011-07-14 Kla-Tencor Corporation Inspection guided overlay metrology
US20150029499A1 (en) 2013-07-25 2015-01-29 Kla-Tencor Corporation Auto-focus system and methods for die-to-die inspection
US20170059491A1 (en) 2015-08-24 2017-03-02 Kla-Tencor Corporation Determining One or More Characteristics of a Pattern of Interest on a Specimen

Also Published As

Publication number Publication date
CN110582842A (zh) 2019-12-17
CN110582842B (zh) 2021-02-23
TW201907156A (zh) 2019-02-16
US10598617B2 (en) 2020-03-24
US20180321168A1 (en) 2018-11-08
JP6931084B2 (ja) 2021-09-01
KR20190138891A (ko) 2019-12-16
TWI750368B (zh) 2021-12-21
WO2018204731A1 (en) 2018-11-08
JP2020519017A (ja) 2020-06-25

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