KR102305774B1 - Silicon carbide grower having inner monitoring function - Google Patents

Abstract

A silicon carbide single crystal growth apparatus is disclosed. In the silicon carbide single crystal growth apparatus according to an embodiment of the present invention, a crucible filled with a deposition material for silicon carbide single crystal growth is disposed therein, and a silicon carbide single crystal growth process is performed while the deposition material from the crucible is deposited. a vacuum chamber defining a place to proceed; and an extremely high temperature optical cable that collects optical signals coming from the subject in the crucible area when the silicon carbide single crystal growth process is in progress, and an optical extreme high temperature temperature monitoring unit that monitors the temperature of the subject area based on the optical signal include

Description

Silicon carbide single crystal growing apparatus {Silicon carbide grower having inner monitoring function}

The present invention relates to a silicon carbide single crystal growth apparatus, and more particularly, it is possible to sense an optical signal coming from a subject in a crucible area more effectively and more accurately than in the prior art, whereby several process processes due to temperature monitoring of the subject area Of course, it relates to a silicon carbide single crystal growth apparatus capable of producing high-quality ingots.

Silicon Carbide (SiC) is a wide-gap semiconductor having a wide forbidden gap in the range of 2.2 to 3.3 eV.

Since silicon carbide has excellent physical and chemical properties, it has been studied as an environment-resistant semiconductor material.

Silicon carbide wafers (SiC wafers), which are used in various fields such as power semiconductors, communication semiconductors, and LED products, have superior characteristics such as high temperature operation, high thermal conductivity, high dielectric breakdown field, and high band gap compared to normal silicon wafers. It is a material attracting attention as a next-generation semiconductor material with properties.

A lot of technology related to a silicon carbide single crystal growth device for making a silicon carbide wafer has been developed, and a representative device among them is a Physical Vapor Transport (PVT).

On the other hand, in order to grow a silicon carbide single crystal ingot of high quality without crystal defects in the application of a silicon carbide single crystal growth apparatus, an appropriate temperature distribution inside the crucible and stable temperature feedback control are essential.

However, since the process temperature of the silicon carbide single crystal growth process is generally performed around an extremely high temperature of about 2400° C., when using a general contact thermocouple, the temperature range is not correct, so measurement is impossible.

Due to this problem, a non-contact long-distance temperature measurement using an infrared temperature sensor was mainly performed in a conventional silicon carbide single crystal growth apparatus.

However, in this non-contact long-distance temperature measurement method, the distance between the measurement subject and the sensor is inevitably far apart, and many problems occur in temperature measurement reproducibility.

In each process, it is difficult to secure the reproducibility of the position and angle of the crucible, the reproducibility of the measurement point, and the reproducibility of the mounting state, so the uncertainty of temperature measurement increases considerably. In addition, due to the occurrence of gases, vaporized silicon (Si), carbide (C) materials, changes in the state of the object surface, and back-deposition of vaporized materials during the process, the measurement temperature deviation is quite high. the current situation.

In addition, problems such as the generation of fine particles and partial separation of the crucible that may occur due to the enlargement of the backside deposition that may appear during the process act as a significant variable in securing the temperature measurement reliability.

In particular, considering that crucible rotation applied for high-quality crystal growth acts as a factor that further promotes the generation of such particles, it is necessary to develop a technology for a silicon carbide single crystal growth device of a new concept that is not known before. am.

Korean Intellectual Property Office Application No. 10-2013-0097028

Therefore, the technical problem to be achieved by the present invention is that an optical signal coming from a subject in the crucible area can be sensed more effectively and accurately than in the prior art, which can be helpful in various process processes due to temperature monitoring of the subject area. It is to provide a silicon carbide single crystal growth apparatus capable of producing high-quality ingots.

According to an aspect of the present invention, a crucible filled with a deposition material for silicon carbide single crystal growth is disposed therein, and a silicon carbide single crystal growth process is formed while the deposition material from the crucible is deposited. vacuum chamber; and an extremely high temperature optical cable that collects optical signals coming from the subject in the crucible area when the silicon carbide single crystal growth process is in progress, and an optical pole that monitors the temperature of the subject area based on the optical signal A silicon carbide single crystal growth apparatus comprising a high temperature temperature monitoring unit may be provided.

a lower rotation shaft connected to the inside and outside of the vacuum chamber and connected to a lower portion of the crucible inside the vacuum chamber and forming a lower rotational axis of the crucible; and an upper rotation shaft connected to the inside and outside of the vacuum chamber and connected to the upper portion of the crucible inside the vacuum chamber and forming an upper rotational axis of the crucible.

The lower rotation shaft and the upper rotation shaft may form a pipe structure with an empty interior, and a shaft rotation driving unit for rotationally driving the corresponding shaft may be coupled to one of the lower rotation shaft and the upper rotation shaft. .

The optical extreme high temperature monitoring unit may be connected to the vacuum chamber via the lower rotation shaft and the upper rotation shaft.

The optical extreme high temperature temperature monitoring unit may include: a lower temperature monitoring unit connected to the lower rotation shaft at a lower portion of the crucible to collect an optical signal coming from a lower portion of the subject in the crucible area; and an upper temperature monitoring unit connected to the upper rotation shaft at an upper portion of the crucible to collect an optical signal coming from an upper portion of the subject in the crucible area.

The structure of the lower temperature monitoring unit and the upper temperature monitoring unit may be the same.

Both the lower temperature monitoring unit and the upper temperature monitoring unit may include an optical temperature sensor for optically measuring a temperature; and a scattering-free window disposed around the optical temperature sensor and transmitting an optical signal coming from the subject to the optical temperature sensor, wherein the extremely high temperature is located close to the subject. After the optical cable collects the optical signal coming from the subject, it can be transmitted to the optical temperature sensor through the projection window without loss of the optical signal.

The optical temperature sensor is disposed in the sensor room, and the sensor room, the lower rotation shaft and the upper rotation shaft may be provided with a partition wall portion to isolate the sensor room and to which the projectile window is mounted, the ultra-high temperature optical cable It may be made of a silicone material.

Both the lower temperature monitoring unit and the upper temperature monitoring unit may further include an extremely high temperature optical double tube having a double-wall structure on which the extremely high temperature optical cable for transmitting the optical signal is disposed.

The ultra-high temperature optical double tube, the outer optical tube; and an inner optical tube disposed in the outer optical tube with a space between the outer optical tube and the ultra-high temperature optical cable transmitting the optical signal therein.

Both the lower temperature monitoring unit and the upper temperature monitoring unit may further include a shutter disposed in an end region of the ultra-high temperature optical double tube, and selectively opening and closing an opening of the ultra-high temperature optical double tube. .

The shutter may be a double umbrella-type shutter.

The arrangement directions of the double umbrella-type shutter provided in the lower temperature monitoring unit and the umbrella-type double shutter provided in the upper temperature monitoring unit may be opposite to each other.

The umbrella-type double shutter includes: a fixed shutter having a lossless projection window (Scattering-free Window) through which the optical signal is projected without loss; and a rotary shutter disposed adjacent to the lossless projection window and having a through hole selectively communicating with the lossless projection window and rotating with respect to the fixed shutter.

Both the lower temperature monitoring unit and the upper temperature monitoring unit may further include a shutter rotation driving unit connected to the rotating shutter and rotating the rotating shutter.

The shutter rotation driving unit may include: a cylinder providing a driving force for rotationally driving the rotating shutter; a rod connecting bar connected to the rod of the cylinder; a shutter coupling bar coupled to the rotary shutter; an operation bar connected to the shutter coupling bar and the rod connection bar and operated by the action of the cylinder; and at least one link module connected to the operation bar.

a signal input unit for inputting a signal for temperature monitoring of the subject area; and

The controller may further include a controller selectively controlling the operation of the shutter rotation driving unit based on an input value of the signal input unit.

The vacuum chamber may include an external insulator disposed relatively outside; and an inner isolator spaced apart from the external insulating part and disposed within the external insulating part, wherein the crucible is located therein, and the crucible may be a graphite crucible.

According to the present invention, it is possible to sense the optical signal coming from the subject in the crucible area more effectively and accurately than in the prior art, which can help various process processes caused by temperature monitoring of the subject area as well as produce high-quality ingots. can

1 is a partial structural diagram of a silicon carbide single crystal growth apparatus according to an embodiment of the present invention.
FIG. 2 is a partial cross-sectional structural view of the lower temperature monitoring unit area shown in FIG. 1 , and is a view showing a state in which temperature monitoring is in progress.
FIG. 3 is a view illustrating a state in which temperature monitoring is not performed as a state in which the rotary shutter is rotated in FIG. 2 .
FIG. 4 is an enlarged view of the umbrella-type double shutter area shown in FIG. 2 .
FIG. 5 is an enlarged view of the umbrella-type double shutter area shown in FIG. 3 .
6 is a plan view of a fixed shutter and a rotating shutter.
7 is a perspective view of an ultra-high temperature optical double tube.
8 is a control block diagram of the silicon carbide single crystal growth apparatus of FIG. 1 .
9 and 10 are variants of an umbrella-type double shutter.

In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the practice of the present invention, reference should be made to the accompanying drawings illustrating preferred embodiments of the present invention and the contents described in the accompanying drawings.

Hereinafter, the present invention will be described in detail by describing preferred embodiments of the present invention with reference to the accompanying drawings. Like reference numerals in each figure indicate like elements.

1 is a partial structural diagram of a silicon carbide single crystal growth apparatus according to an embodiment of the present invention, and FIG. 2 is a partial cross-sectional structural diagram of the lower temperature monitoring unit region shown in FIG. 1, showing a state in which temperature monitoring is in progress. , FIG. 3 is a view showing a state in which temperature monitoring is not performed as a state in which the rotary shutter is rotated in FIG. 2, FIG. 4 is an enlarged view of the double shutter area of the umbrella type shown in FIG. 2, and FIG. 5 is FIG. It is an enlarged view of the umbrella-type double shutter region shown in Fig. 6 is a plan view of a fixed shutter and a rotating shutter, Fig. 7 is a perspective view of an ultra-high temperature optical double tube, and Fig. 8 is a silicon carbide single crystal growth apparatus of Fig. 1. It is a control block diagram, and FIGS. 9 and 10 are modified examples of an umbrella-type double shutter.

Referring to these drawings, according to the silicon carbide single crystal growth apparatus according to the present embodiment, it is possible to more effectively and accurately sense an optical signal coming from the subject in the crucible 110 area than in the prior art, and this results in temperature monitoring of the subject area. It can help many process processes, as well as produce high-quality ingots.

That is, the temperature of the subject (hereinafter referred to as the subject) area of the crucible 110 area can be accurately monitored, so that the shape of the crucible 110, the growth shape of the silicon carbide single crystal, and the shape remaining during the evaporation of the silicon carbide powder can be accurately measured. can be checked, which can help several process processes.

In the silicon carbide single crystal growth apparatus according to this embodiment that can provide such an effect, a crucible 110 filled with a deposition material for silicon carbide single crystal growth is disposed inside, and the deposition material from the crucible 110 is It may include a vacuum chamber 100 that forms a place where a silicon carbide single crystal growth process is performed while being deposited, and an optical extreme high temperature monitoring unit 130 coupled to the vacuum chamber 100 .

The optical extreme high temperature temperature monitoring unit 130 is coupled to the vacuum chamber 100 as shown in FIG. 1 , and monitors the temperature of the subject area based on an optical signal coming from the subject when the silicon carbide single crystal growth process is in progress.

As described above, the shape of the crucible 110, the growth shape of the silicon carbide single crystal, and the shape remaining during evaporation of the silicon carbide powder can be accurately checked through the monitored temperature value as described above.

The vacuum chamber 100 provides a place where silicon carbide single crystals grow as described above.

The vacuum chamber 100 may include the following structure to block external heat from the crucible 110 . That is, it may include an outer insulating part 101 (Outer Isolator) disposed relatively outside, and an inner insulating part 102 (Inner Isolator) spaced apart from the external insulating part 101 and disposed in the external insulating part 101 . . The crucible 110 may be disposed in the inner insulation 102 .

In this embodiment, the crucible 110 may be a graphite crucible 110 (Graphite Crucible). The graphite crucible 110 is less affected by impurities, and can guarantee strong durability without cracking even at a high temperature.

In this embodiment, the silicon carbide single crystal may be grown by physical vapor deposition (PVT). That is, a silicon carbide single crystal grows through a method in which the source material 111 in the graphite crucible 110, that is, the deposition material is evaporated and deposited on the seed material 112, to finally form an ingot. can After complete growth, the ingot can be sliced to make a silicon carbide wafer. For reference, the seed material 112 refers to a material in which silicon carbide single crystal growth starts.

Although not shown in detail, an induction heater is coupled to the graphite crucible 110 in order to evaporate the deposition material in the graphite crucible 110 . The deposition material in the graphite crucible 110 may be evaporated by the action of the induction heating heater to grow into a silicon carbide single crystal.

A lower rotation shaft 121 and an upper rotation shaft 122 are coupled to the vacuum chamber 100 .

The lower rotation shaft 121 is connected to the inside and outside of the empty chamber 100 , and is connected to the lower portion of the crucible 110 in the vacuum chamber 100 , and forms a lower rotational axis of the crucible 110 .

And, the upper rotation shaft 122 is also connected to the inside and outside of the vacuum chamber 100, is connected to the upper portion of the crucible 110 in the inside of the vacuum chamber 100, and forms an upper rotational axis of the crucible (110).

In this embodiment, the lower rotation shaft 121 and the upper rotation shaft 122 form a hollow pipe structure. Therefore, it is advantageous to arrange the extremely high temperature optical cable (141, Optical Cable) constituting the optical extreme high temperature temperature monitoring unit 130 .

A shaft rotation driving unit 123 for rotating the lower rotation shaft 121 is coupled to the lower rotation shaft 121 .

The shaft rotation driving unit 123 may include a motor structure. For smooth rotation of the crucible 110 , the shaft rotation driving unit 123 may include a rotary joint 124 .

Although the shaft rotation driving unit 123 is connected to the lower rotation shaft 121 in the drawing, it may be connected to the upper rotation shaft 122 . Accordingly, the scope of the present invention is not limited to the shape of the drawings.

As such, when the silicon carbide single crystal is grown while rotating the crucible 110 in the axial direction using the shaft rotation driving unit 123, the quality of the ingot can be improved.

On the other hand, the optical extreme high temperature temperature monitoring unit 130 is a device coupled to the vacuum chamber 100 as described above, and serves to monitor the temperature of the subject area. To this end, in the case of this embodiment, it includes an extremely high temperature optical cable (141, Optical Cable) that collects an optical signal coming from a subject when the silicon carbide single crystal growth process is in progress. Since the temperature of the subject area is 200° C. or higher, an extremely high temperature optical cable 141 that can withstand this is applied. The extremely high temperature optical cable 141 may be made of a silicon material. The ultra-high temperature optical cable 141 is a cable connecting the optical temperature sensor 142 and the subject to be described later.

As will be described later in detail, unlike the conventional long-distance temperature measurement method, in the present embodiment, the optical signal coming from the subject is collected through the extremely high temperature optical cable 141 placed in a position close to the subject, and the loss of the optical signal is reduced. It is transmitted to the optical temperature sensor (142, Optical Temperature Sensor) placed outside the vacuum structure through the no projectile window (143, Scattering-free Window). Accordingly, the optical temperature sensor 142 can accurately measure a temperature value.

In this embodiment, the optical extreme high temperature monitoring unit 130 is connected to the vacuum chamber 100 via the lower rotation shaft 121 and the upper rotation shaft 122 .

The optical extreme high temperature temperature monitoring unit 130 is a lower temperature monitoring unit connected to the lower rotation shaft 121 in the lower part of the crucible 110 to collect an optical signal coming from the lower part of the subject of the crucible 110 area (130a) and an upper temperature monitoring unit 130b connected to the upper rotation shaft 122 at an upper portion of the crucible 110 to collect an optical signal coming from an upper portion of the subject of the crucible 110 region.

Since the temperature values of the lower and upper regions of the crucible 110 are to be controlled differently, the optical extreme high temperature monitoring unit 130 includes a lower temperature monitoring unit 130a and an upper temperature monitoring unit 130b.

In the present embodiment, the lower temperature monitoring unit 130a and the upper temperature monitoring unit 130b have the same structure and function, only the arrangement of the umbrella-type double shutter 150 is different. Therefore, only the structure of the lower temperature monitoring unit 130a shown in FIGS. 2 and 3 will be described below. The structure, function, and operation of the upper temperature monitoring unit 130b are to be understood with reference to FIGS. 2 and 3 .

Both the lower temperature monitoring unit 130a and the upper temperature monitoring unit 130b constituting the optical extreme high temperature monitoring unit 130 include an optical temperature sensor 142 (Optical Temperature Sensor) for optically measuring a temperature, and an optical temperature sensor It is disposed around the 142, and may include a projection window (143, Scattering-free Window) for transmitting an optical signal coming from the subject to the optical temperature sensor 142.

The projection window 143 serves to allow the optical signal directed to the optical temperature sensor 142 to move to vacuum-vacuum or vacuum-atmosphere without loss.

After the extremely high temperature optical cable 141 located close to the subject collects the optical signal coming from the subject, it can be transmitted to the optical temperature sensor 142 through the projection window 143 without loss of the optical signal. Accordingly, the optical temperature sensor 142 may accurately sense the lower or upper temperature of the subject based on the transmitted optical signal.

Since the optical temperature sensor 142 may be weak to heat, it may be disposed in the sensor room 144 outside the vacuum chamber 100 . The sensor room 144, the lower rotation shaft 121, and the upper rotation shaft 122 are provided with a partition wall part 145 to isolate the sensor room 144 and to which the projectile window 143 is mounted. That is, the projection window 143 may be mounted in such a way that the projection window 143 is installed by drilling one side of the partition wall portion 145 .

Both the lower temperature monitoring unit 130a and the upper temperature monitoring unit 130b constituting the optical extreme high temperature temperature monitoring unit 130 are arranged with an extremely high temperature optical cable 141 that transmits an optical signal, the extreme high temperature having a double wall structure. and a Double Optical Tube (146).

In order to stably support the ultra-high temperature optical cable 141 at a high temperature and prevent contamination, a double-layer structure called the ultra-high temperature optical double tube 146 is applied.

7, the ultra-high temperature optical double tube 146 is disposed in the outer optical tube 146a with an outer optical tube 146a and a space between the outer optical tube 146a and an optical signal therein. It includes an inner optical tube (146b) in which the ultra-high temperature optical cable (141) for transmitting is disposed.

On the other hand, it is not necessary to continuously measure the temperature of the subject in real time. In other words, it is only necessary to measure the temperature during the process when it is necessary.

To implement this, a shutter 150 is applied to both the lower temperature monitoring unit 130a and the upper temperature monitoring unit 130b constituting the optical extreme high temperature monitoring unit 130 . In other words, the shutter 150 is disposed at the end region of the ultra-high temperature optical double tube 146 , and serves to selectively open and close the opening of the ultra-high temperature optical double tube 146 .

In this embodiment, the shutter 150 is applied as a double umbrella-type shutter (150, Double Umbrella-type Shutter).

However, the umbrella-type double shutter 150 provided in the lower temperature monitoring unit 130a and the umbrella-type double shutter 150a provided in the upper temperature monitoring unit 130b are arranged only in opposite directions to each other, but their structure and action , all roles are the same. Therefore, the following description will be focused on the umbrella-type double shutter 150 provided in the lower temperature monitoring unit 130a.

Umbrella double shutter 150 is a fixed shutter 151 having a lossless projection window (151a, Scattering-free Window) through which an optical signal is projected without loss, and a lossless projection window (151a) disposed adjacent to the lossless It has a through hole 152a selectively communicating with the projectile window 151a and includes a rotating shutter 152 that rotates with respect to the fixed shutter 151 .

In the rotating shutter 152 of the umbrella-shaped double shutter 150, there is a through-hole 152a, which is a hole through the center of the umbrella-shaped shape, so that an optical signal can pass, and the fixed shutter 151 has a lossless projection window, not a hole. (151a) is placed.

When the lossless projection window 151a is applied to the rotary shutter 152, not the through hole 152a, vaporized particles are deposited on the back side in the corresponding area and cause contamination, which is a result of accurate optical signal transmission and temperature measurement through this. undermines reliability. Therefore, it is preferable that the through hole 152a is formed in the rotary shutter 152 .

If an opening is formed in the fixed shutter 151 instead of the lossless projectile window 151a, fine particles may flow into the extremely high temperature optical double tube 146 and cause contamination, so the fixed shutter 151 has a lossless projectile window (151a) preferably applies. And, since it has a structure protected by the rotating shutter 152 in the closed shutter state, it is not greatly affected by contamination.

In addition, by applying an umbrella-shaped double shutter 150, rather than a simple horizontal straight-type, the micro-particles generated at the top of the ultra-high temperature optical cable 141 and flowing toward the ultra-high temperature optical cable 141, the crucible 110 is separated. Contaminants such as water may be induced to fall outside the extremely high temperature optical cable 141 without being directed toward the extremely high temperature optical cable 141 .

On the other hand, the umbrella-type double shutter 150 may be variously modified, such as a straight double shutter 250 inclined as shown in FIG. 9 or a curved double shutter 350 as shown in FIG. 10 , deviating from the structure of FIGS. 4 and 5 . The inclined straight double shutter 250 and the curved double shutter 350 also have fixed shutters 251 and 351 with lossless projectile windows 251a and 351a, and rotary shutters 252 and 352 with through holes 252a and 352a. ) has a structure of

2 ( FIG. 4 ) and FIG. 3 ( FIG. 5 ), the shutter rotation driving unit 160 is applied for the rotation operation of the rotation shutter 152 . The shutter rotation driving unit 160 is connected to the rotation shutter 152 and serves to rotate the rotation shutter 152 .

The shutter rotation driving unit 160 includes a cylinder 161 providing a driving force for rotationally driving the rotation shutter 152, a rod connection bar 162 connected to the rod 161a of the cylinder 161, and a rotation shutter ( The shutter coupling bar 163 coupled to the 152, the shutter coupling bar 163 and the rod coupling bar 162 are connected, and the operating bar 164 operated by the action of the cylinder 161, and the operating bar 164 ) includes a link module 165 connected to. A sealing material 166 is interposed in the partition wall 145 to maintain the airtightness of the operation bar 164 .

Accordingly, when it operates as in FIG. 2 ( FIG. 4 ), that is, when the length of the rod 161a of the cylinder 161 is reduced, the rod connection bar 162 , the operation bar 164 , the shutter coupling bar 163 and the link module 165 . ), the rotating shutter 152 takes a form disposed on the fixed shutter 151 . In this case, after the optical signal is collected by the extremely high temperature optical cable 141 through the through hole 152a of the rotary shutter 152 and the lossless projection window 151a of the fixed shutter 151, then the projection window 143 ) through the optical temperature sensor 142 . Accordingly, the optical temperature sensor 142 may sense a temperature value according to the optical signal.

On the other hand, when it operates as in FIG. 3 ( FIG. 5 ), that is, when the length of the rod 161a of the cylinder 161 is extended, the rod connection bar 162 , the operation bar 164 , the shutter coupling bar 163 and the link module ( 165), the rotary shutter 152 rotates to take a form obliquely disposed on the fixed shutter 151 . In this case, since the optical signal is blocked by the wall of the rotating shutter 152 , the temperature sensing of the subject is not performed. That is, the internal monitoring process for the subject does not proceed.

On the other hand, the signal input unit 170 and the controller 180 are further mounted in the silicon carbide single crystal growth apparatus of this embodiment.

The signal input unit 170 serves to input a signal for temperature monitoring of the subject area. The signal input unit 170 may have a built-in timer to automatically input a signal.

The controller 180 selectively controls the operation of the shutter rotation driving unit 160 based on an input value of the signal input unit 170 .

In detail, when the controller 180 controls the operation of the shutter rotation driving unit 160 as shown in FIG. 2 , the optical signal is transmitted through the through hole 152a of the rotation shutter 152 and the lossless projection window 151a of the fixed shutter 151 . After being collected by the ultra-high temperature optical cable 141 through the, then transmitted to the optical temperature sensor 142 through the projection window 143. Accordingly, the optical temperature sensor 142 may sense a temperature value according to the optical signal.

In contrast, when the controller 180 controls the operation of the shutter rotation driving unit 160 as shown in FIG. 3 , that is, when the rotating shutter 152 is rotated by the shutter rotation driving unit 160 , an optical signal is generated by the wall of the rotating shutter 152 . The temperature of the subject is not sensed because the is blocked.

The controller 180 performing this role may include a central processing unit 181 (CPU), a memory 182 (MEMORY), and a support circuit 183 (SUPPORT CIRCUIT).

The central processing unit 181 may be one of various computer processors that can be industrially applied to selectively control the operation of the shutter rotation driving unit 160 based on the input value of the signal input unit 170 in this embodiment. .

The memory 182 (MEMORY) is connected to the central processing unit (181). The memory 182 is a computer-readable recording medium, which may be installed locally or remotely, and may be easily available such as, for example, random access memory (RAM), ROM, floppy disk, hard disk, or any digital storage form. It may be at least one memory.

The support circuit 183 (SUPPORT CIRCUIT) is coupled to the central processing unit 181 to support typical operations of the processor. The support circuit 183 may include a cache, a power supply, a clock circuit, an input/output circuit, a subsystem, and the like.

In the present embodiment, the controller 180 selectively controls the operation of the shutter rotation driving unit 160 based on the input value of the signal input unit 170 , and such a series of control processes may be stored in the memory 182 . . Typically, software routines may be stored in memory 182 . Software routines may also be stored or executed by other central processing units (not shown).

Although the process according to the present invention has been described as being executed by a software routine, it is also possible that at least some of the processes of the present invention are performed by hardware. As such, the processes of the present invention may be implemented in software executed on a computer system, implemented in hardware such as an integrated circuit, or implemented by a combination of software and hardware.

Hereinafter, the operation of the silicon carbide single crystal growth apparatus according to the present embodiment will be described.

The lower temperature monitoring unit 130a is taken as an example. 2 ( FIG. 4 ), that is, when the length of the rod 161a of the cylinder 161 is reduced, the rod connection bar 162 , the operation bar 164 , the shutter coupling bar 163 and the link module 165 are As a result, the rotary shutter 152 takes a form disposed above the fixed shutter 151 .

In this case, after the optical signal is collected by the extremely high temperature optical cable 141 through the through hole 152a of the rotary shutter 152 and the lossless projection window 151a of the fixed shutter 151, then the projection window 143 ) through the optical temperature sensor 142 . Accordingly, the optical temperature sensor 142 may sense a temperature value according to the optical signal.

Although not shown in the drawing, the upper temperature monitoring unit 130b also operates on the same principle.

On the other hand, when it operates as in FIG. 3 ( FIG. 5 ), that is, when the length of the rod 161a of the cylinder 161 is extended, the rod connection bar 162 , the operation bar 164 , the shutter coupling bar 163 and the link module ( 165), the rotary shutter 152 rotates to take a form obliquely disposed on the fixed shutter 151 . In this case, since the optical signal is blocked by the wall of the rotating shutter 152 , the temperature sensing of the subject is not performed. That is, the internal monitoring process for the subject does not proceed.

According to this embodiment, which operates in the structure as described above, an optical signal coming from a subject in the crucible 110 area can be sensed more effectively and accurately than in the prior art. Of course, it is possible to produce high-quality ingots.

As such, the present invention is not limited to the described embodiments, and it is apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit and scope of the present invention. Accordingly, it should be said that such modifications or variations fall within the scope of the claims of the present invention.

100: vacuum chamber 101: external insulation
102: inner insulation 110: crucible
121: lower rotation shaft 122: upper rotation shaft
123: shaft rotation driving unit 130: optical extreme high temperature temperature monitoring unit
130a: lower temperature monitoring unit 130b: upper temperature monitoring unit
141: extremely high temperature optical cable 142: optical temperature sensor
143: projectile window 144: sensor room
145: bulkhead 146: ultra-high temperature optical double tube
146a: outer optical tube 146b: inner optical tube
150: umbrella double shutter 151: fixed shutter
151a: lossless projectile window 152: rotating shutter
152a: through hole 160: shutter rotation driving unit
161: cylinder 161a: rod
162: rod connection bar 163: shutter coupling bar
164: operation bar 165: link module
166: sealing material 170: signal input unit
180: controller

Claims (18)

a vacuum chamber having a crucible filled with a deposition material for silicon carbide single crystal growth disposed therein, and forming a place where a silicon carbide single crystal growth process is performed while the deposition material from the crucible is deposited;
When the silicon carbide single crystal growth process is in progress, an extremely high temperature optical cable is provided for collecting an optical signal coming from a subject in the crucible area, and an optical extreme temperature for monitoring the temperature of the subject area based on the optical signal temperature monitoring unit;
a lower rotation shaft connected to the inside and outside of the vacuum chamber and connected to a lower portion of the crucible inside the vacuum chamber and forming a lower rotational axis of the crucible; and
and an upper rotation shaft connected to the inside and outside of the vacuum chamber and connected to the upper portion of the crucible inside the vacuum chamber, and forming an upper rotational axis of the crucible,
The optical extreme high temperature monitoring unit,
a lower temperature monitoring unit connected to the lower rotation shaft in the lower part of the crucible to collect an optical signal coming from the lower part of the subject in the crucible area; and
and an upper temperature monitoring unit connected to the upper rotation shaft at the upper part of the crucible to collect an optical signal coming from the upper part of the subject in the crucible area,
The structure of the lower temperature monitoring unit and the upper temperature monitoring unit is the same, but both the lower temperature monitoring unit and the upper temperature monitoring unit are,
an optical temperature sensor that optically measures temperature; and
It is disposed in the vicinity of the optical temperature sensor, and includes a projection window (Scattering-free Window) for transmitting the optical signal coming from the subject to the optical temperature sensor,
Silicon carbide single crystal, characterized in that the ultra-high temperature optical cable located close to the subject collects the optical signal coming from the subject and transmits it to the optical temperature sensor through the projection window without loss of the optical signal growth device. delete According to claim 1,
The lower rotation shaft and the upper rotation shaft form a hollow pipe structure,
A silicon carbide single crystal growing apparatus, characterized in that coupled to one of the lower rotation shaft and the upper rotation shaft, a shaft rotation driving unit for rotationally driving the corresponding shaft. According to claim 1,
The optical extreme high temperature monitoring unit is a silicon carbide single crystal growth apparatus, characterized in that connected to the vacuum chamber via the lower rotation shaft and the upper rotation shaft. delete delete delete According to claim 1,
The optical temperature sensor is disposed in the sensor room, the sensor room, the lower rotation shaft, and the upper rotation shaft are provided with a partition wall portion to isolate the sensor room, the projection window is mounted,
The ultra-high temperature optical cable is a silicon carbide single crystal growth apparatus, characterized in that made of a silicon material. According to claim 1,
Both the lower temperature monitoring unit and the upper temperature monitoring unit,
Silicon carbide single crystal growing apparatus, characterized in that it further comprises an ultra-high temperature optical double tube (Double Optical Tube) having a double-wall structure in which the ultra-high temperature optical cable for transmitting the optical signal is disposed. 10. The method of claim 9,
The ultra-high temperature optical double tube,
outer optical tube; and
Silicon carbide single crystal growing apparatus comprising an inner optical tube disposed in the outer optical tube with a space between the outer optical tube and the ultra-high temperature optical cable transmitting the optical signal therein. 10. The method of claim 9,
Both the lower temperature monitoring unit and the upper temperature monitoring unit,
The silicon carbide single crystal growth apparatus, which is disposed at the end region of the ultra-high temperature optical double tube, and further comprises a shutter selectively opening and closing the opening of the ultra-high temperature optical double tube. 12. The method of claim 11,
Silicon carbide single crystal growth apparatus, characterized in that the shutter is an umbrella-type double shutter (Double Umbrella-type Shutter). 13. The method of claim 12,
Silicon carbide single crystal growing apparatus, characterized in that the arrangement direction of the double umbrella-type shutter provided in the lower temperature monitoring unit and the umbrella-type double shutter provided in the upper temperature monitoring unit are opposite to each other. 13. The method of claim 12,
The umbrella-type double shutter,
a fixed shutter having a scattering-free window through which the optical signal is projected without loss; and
Silicon carbide single crystal growing apparatus, arranged adjacent to the lossless projection window, and having a through hole selectively communicating with the lossless projection window, and comprising a rotating shutter rotating with respect to the fixed shutter. 15. The method of claim 14,
Both the lower temperature monitoring unit and the upper temperature monitoring unit,
A silicon carbide single crystal growing apparatus connected to the rotary shutter and further comprising a shutter rotation driving unit for rotationally driving the rotary shutter. 16. The method of claim 15,
The shutter rotation driving unit,
a cylinder providing a driving force for rotating the rotating shutter;
a rod connecting bar connected to the rod of the cylinder;
a shutter coupling bar coupled to the rotary shutter;
an operation bar connected to the shutter coupling bar and the rod connection bar and operated by the action of the cylinder; and
Silicon carbide single crystal growth apparatus comprising at least one link module connected to the operation bar. 16. The method of claim 15,
a signal input unit for inputting a signal for temperature monitoring of the subject area; and
The silicon carbide single crystal growing apparatus further comprising a controller selectively controlling the operation of the shutter rotation driving unit based on the input value of the signal input unit. According to claim 1,
The vacuum chamber,
Relatively disposed externally insulator (Outer Isolator); and
It is spaced apart from the external insulating part and is disposed in the external insulating part and includes an inner insulating part (Inner Isolator) in which the crucible is located,
The silicon carbide single crystal growth apparatus, characterized in that the crucible is a graphite crucible (Graphite Crucible).

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