KR102298537B1 - 높은 유도성 부하 시스템들에서 fet들의 연속적인 전류 제한을 위한 방법들 및 장치들 - Google Patents

높은 유도성 부하 시스템들에서 fet들의 연속적인 전류 제한을 위한 방법들 및 장치들 Download PDF

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KR102298537B1
KR102298537B1 KR1020187037641A KR20187037641A KR102298537B1 KR 102298537 B1 KR102298537 B1 KR 102298537B1 KR 1020187037641 A KR1020187037641 A KR 1020187037641A KR 20187037641 A KR20187037641 A KR 20187037641A KR 102298537 B1 KR102298537 B1 KR 102298537B1
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South Korea
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current
fet
terminal
circuit
gate
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KR20200014675A (ko
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카일 슐메이어
슈알프 아라스
아비두르 라만
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텍사스 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Emergency Protection Circuit Devices (AREA)
KR1020187037641A 2016-06-29 2017-06-30 높은 유도성 부하 시스템들에서 fet들의 연속적인 전류 제한을 위한 방법들 및 장치들 Active KR102298537B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/196,323 US9871514B1 (en) 2016-06-29 2016-06-29 Methods and apparatus for continuous current limiting for FETS in high inductive load systems
PCT/IB2017/001097 WO2018002729A2 (en) 2016-06-29 2017-06-30 Methods and apparatus for continuous current limiting for fets in high inductive load systems

Publications (2)

Publication Number Publication Date
KR20200014675A KR20200014675A (ko) 2020-02-11
KR102298537B1 true KR102298537B1 (ko) 2021-09-07

Family

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Application Number Title Priority Date Filing Date
KR1020187037641A Active KR102298537B1 (ko) 2016-06-29 2017-06-30 높은 유도성 부하 시스템들에서 fet들의 연속적인 전류 제한을 위한 방법들 및 장치들

Country Status (5)

Country Link
US (1) US9871514B1 (enExample)
EP (1) EP3479186B1 (enExample)
JP (1) JP7021726B2 (enExample)
KR (1) KR102298537B1 (enExample)
WO (1) WO2018002729A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017063300A (ja) * 2015-09-24 2017-03-30 エスアイアイ・セミコンダクタ株式会社 入力回路
US10365833B2 (en) 2016-01-22 2019-07-30 Micron Technology, Inc. Apparatuses and methods for encoding and decoding of signal lines for multi-level communication architectures
KR102512576B1 (ko) * 2017-05-09 2023-03-23 소니 세미컨덕터 솔루션즈 가부시키가이샤 전원 회로
US10283187B2 (en) 2017-07-19 2019-05-07 Micron Technology, Inc. Apparatuses and methods for providing additional drive to multilevel signals representing data
TWI657249B (zh) * 2018-03-02 2019-04-21 茂達電子股份有限公司 電流感測電路
US10720832B2 (en) * 2018-11-05 2020-07-21 Lion Semiconductor Inc. Circuits and methods for measuring the output current of a switched capacitor regulator
US10554203B1 (en) * 2018-11-30 2020-02-04 Texas Instruments Incorporated Radio frequency detection circuit
JP7394567B2 (ja) * 2019-09-18 2023-12-08 ローム株式会社 スイッチ装置
CN116073658B (zh) * 2021-11-02 2025-11-28 瑞昱半导体股份有限公司 具有功率限制机制的电源供应装置及方法

Citations (3)

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JP2003114726A (ja) 2001-10-05 2003-04-18 Toshiba Corp 半導体集積回路
JP2015524207A (ja) 2012-06-05 2015-08-20 フリースケール セミコンダクター インコーポレイテッド ブートストラップ電荷蓄積デバイスを充電するための方法および装置
US20160028307A1 (en) 2014-07-24 2016-01-28 Infineon Technologies Ag High side switch with current limit feedback

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US6100728A (en) * 1995-07-31 2000-08-08 Delco Electronics Corp. Coil current limiting feature for an ignition coil driver module
JP3132648B2 (ja) * 1996-09-20 2001-02-05 富士電機株式会社 電力変換器におけるゲート駆動回路
US6330143B1 (en) * 2000-02-23 2001-12-11 Ford Global Technologies, Inc. Automatic over-current protection of transistors
RU2183346C1 (ru) * 2001-04-16 2002-06-10 Миронов Анатолий Александрович Источник стабилизированного тока
DE10126319A1 (de) * 2001-05-30 2003-02-13 Infineon Technologies Ag Verfahren zur Ansteuerung eines Halbleiterschaltelements zur Reduzierung der elektromagnetischen Störstrahlung und Schaltungsanordnung
US7479770B2 (en) * 2005-04-28 2009-01-20 Texas Instruments Incorporated System and method for driving a power field-effect transistor (FET)
US7463469B2 (en) * 2006-02-02 2008-12-09 Texas Instruments Incorporated System and method for current overload response with class D topology
US7791854B2 (en) * 2007-09-05 2010-09-07 Nuvoton Technology Corporation Current limit protection apparatus and method for current limit protection
JP5343986B2 (ja) * 2011-01-25 2013-11-13 株式会社デンソー 電子装置
JP5806972B2 (ja) * 2012-04-27 2015-11-10 セイコーインスツル株式会社 出力ドライバ回路
US9172365B2 (en) * 2013-08-31 2015-10-27 Freescale Semiconductor, Inc. Method and circuit for controlling turnoff of a semiconductor switching element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003114726A (ja) 2001-10-05 2003-04-18 Toshiba Corp 半導体集積回路
JP2015524207A (ja) 2012-06-05 2015-08-20 フリースケール セミコンダクター インコーポレイテッド ブートストラップ電荷蓄積デバイスを充電するための方法および装置
US20160028307A1 (en) 2014-07-24 2016-01-28 Infineon Technologies Ag High side switch with current limit feedback

Also Published As

Publication number Publication date
EP3479186A4 (en) 2019-07-17
WO2018002729A2 (en) 2018-01-04
US9871514B1 (en) 2018-01-16
JP2019520760A (ja) 2019-07-18
EP3479186A2 (en) 2019-05-08
JP7021726B2 (ja) 2022-02-17
EP3479186B1 (en) 2022-10-26
US20180006643A1 (en) 2018-01-04
KR20200014675A (ko) 2020-02-11
WO2018002729A3 (en) 2018-02-08

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