KR102285887B1 - Method of manufacturing Organic Light Emitting Device and Organic Light Emitting Display Device - Google Patents

Abstract

The present invention provides a step of laminating an organic layer on a substrate; A method of manufacturing an organic light emitting device comprising a step of removing moisture contained in or on the surface of the organic layer, wherein the step of removing moisture includes a step of vacuuming in a vacuum chamber and organic light emitting using the same The present invention relates to a method of manufacturing a display device.

Description

TECHNICAL FIELD [0001] Method of manufacturing Organic Light Emitting Device and Organic Light Emitting Display Device

The present invention relates to an organic light emitting device, and more particularly, to a method of manufacturing an organic light emitting device capable of reducing the moisture content in an organic layer.

The organic light emitting device has a structure in which a light emitting layer is formed between a cathode for injecting electrons and an anode for injecting holes, so that electrons generated from the cathode and holes generated from the anode are formed. When injected into the light emitting layer, the injected electrons and holes combine to generate an exciton, and the generated exciton falls from an excited state to a ground state to emit light.

As described above, the organic light-emitting device is a device capable of self-emission and is widely used in display devices that display lighting or images.

Hereinafter, a conventional organic light emitting device will be described with reference to the drawings.

1 is a schematic cross-sectional view of a conventional organic light emitting device.

As can be seen from FIG. 1 , a conventional organic light emitting device includes a substrate 10 , an anode, a hole injection layer (HIL), a hole transport layer (HTL), and a light emitting layer (Emitting Layer; EML). ), an electron transporting layer (ETL), an electron injecting layer (EIL), and a cathode.

The anode is stacked on the substrate 10 , the hole injection layer HIL is stacked on the anode, and the hole transport layer HTL is the hole injection layer HIL. The light emitting layer (EML) is stacked on the hole transport layer (HTL), the electron transport layer (ETL) is stacked on the light emitting layer (EML), and the electron injection layer (EIL) is The electron transport layer is stacked on the ETL, and the cathode is stacked on the electron injection layer EIL.

In a conventional organic light emitting device, a plurality of organic layers including the light emitting layer EML are formed between the anode and the cathode, so that holes generated in the anode are injected. Electrons transmitted to the light emitting layer EML through an organic layer including a layer HIL and the hole transport layer HTL and generated in the cathode are transferred to the electron injection layer EIL and the electron transport layer ETL ) is transmitted to the light emitting layer EML through an organic layer made of

However, such a conventional organic light emitting device has a disadvantage in that it is easily deteriorated and the device lifespan is shortened.

Specifically, since the plurality of organic layers formed between the anode and the cathode are easily deteriorated by moisture or oxygen, moisture or oxygen penetrates into the organic layer during the process of forming each organic layer. Process conditions must be controlled to avoid this.

The organic layers may be formed through a deposition process in a vacuum chamber, or may be formed through an inkjet process at atmospheric pressure in some cases. In the case of forming the organic layer through the deposition process in the vacuum chamber, the possibility of moisture or oxygen permeating into the organic layer is relatively small. The possibility of penetration increases, and thus, the lifespan due to deterioration of the device is highly likely to be shortened.

SUMMARY OF THE INVENTION The present invention has been devised to solve the above-mentioned conventional problems, and an object of the present invention is to provide a method of manufacturing an organic light emitting device capable of reducing a moisture content in an organic layer, and a method of manufacturing an organic light emitting display device using the same.

The present invention, in order to achieve the above object, a process of laminating an organic layer on a substrate; It provides a method of manufacturing an organic light emitting device comprising a step of removing moisture contained in the surface or the inside of the organic layer, and the step of removing the moisture includes a step of vacuuming in a vacuum chamber.

The present invention also provides a process for forming a thin film transistor on a substrate; forming a planarization layer on the thin film transistor; forming a first electrode on the planarization layer; forming an organic layer on the first electrode; and a process of forming a second electrode on the organic layer, wherein the process of forming the organic layer includes a process of laminating the organic layer, and a process of removing moisture contained in or on the surface of the organic layer A method of manufacturing an organic light emitting diode display is provided, wherein the process of removing the moisture includes a process of vacuuming in a vacuum chamber.

According to an embodiment of the present invention as described above, after laminating the organic layer, a process of removing moisture contained within or on the surface of the organic layer is additionally performed to minimize the moisture content in the organic layer, thereby deteriorating the device. can reduce the problem.

1 is a schematic cross-sectional view of a conventional organic light emitting device.
2A to 2G are cross-sectional views illustrating a manufacturing process of an organic light emitting device according to an embodiment of the present invention.
3A to 3C are cross-sectional views illustrating a manufacturing process of an organic light emitting diode display according to an exemplary embodiment.
4 is a graph illustrating a normalized quantum efficiency (QE) change according to a temperature change during a vacuum treatment process for removing moisture from the light emitting layer (EML).
5 is a graph illustrating a normalized quantum efficiency (QE) change according to a pressure change during a vacuum treatment process for removing moisture from the light emitting layer (EML).
FIG. 6 is a graph showing a change in normalized quantum efficiency (QE) according to time change during a vacuum treatment process for removing moisture from the light emitting layer (EML).

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, 'immediately' or 'directly' when a temporal relationship is described with 'after', 'following', 'after', 'before', etc. It may include cases that are not continuous unless this is used.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

2A to 2G are cross-sectional views illustrating a manufacturing process of an organic light emitting device according to an embodiment of the present invention.

First, as shown in FIG. 2A , an anode is formed on the substrate 1 .

The anode may be made of a transparent conductive material having high conductivity and a work function, for example, a transparent conductive material such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), SnO2 or ZnO. Such an anode may be formed through a deposition process known in the art, such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

Next, as can be seen in FIG. 2B, a hole injection layer (HIL) is laminated on the anode, and moisture or oxygen contained in the surface or inside of the hole injection layer (HIL) (hereinafter referred to as 'moisture or oxygen' is collectively called 'moisture').

The hole injection layer (HIL) is MTDATA (4,4',4"-tris(3-methylphenylphenylamino)triphenylamine), CuPc (copper phthalocyanine) or PEDOT/PSS (poly(3,4-ethylenedioxythiphene, polystyrene sulfonate), etc.). It may be made of an organic material, but is not necessarily limited thereto.

The hole injection layer HIL may be formed by laminating an organic material using an inkjet process and then baking the stacked organic material.

The inkjet process may be performed in the atmosphere, or may be performed in a chamber in a nitrogen or argon atmosphere. The baking process of the hole injection layer (HIL) may be performed at a temperature of 180° C. or more, preferably 200° C. to 250° C. for 10 minutes or more, but is not necessarily limited thereto. In the case of laminating an organic material by the inkjet process, it is particularly preferable to remove the water acting as a quencher because moisture may act as a quencher on the surface of the organic material to reduce the light emitting characteristics of the device.

The hole injection layer (HIL) may be deposited through a deposition process known in the art, such as an evaporation process in a vacuum chamber. When the organic material is laminated through the deposition process, the problem of deterioration of light emitting properties due to moisture is relatively small compared to the inkjet process.

The process of removing moisture contained in the hole injection layer HIL may be performed as follows.

First, the process of removing moisture contained in the hole injection layer (HIL) may be a process of vacuum processing in a vacuum chamber. The vacuum treatment is preferably performed at a temperature of 5° C. to less than 30° C., ^{a pressure of 10 -3} or less torr, and a time condition of 5 minutes to 1 hour.

When the temperature of the vacuum treatment process is less than 5 ℃, the process temperature is too low, the moisture removal effect may be reduced. It is preferable to shorten the process time when the temperature of the process of vacuum processing becomes 30 degreeC or more. If the pressure of the vacuum treatment process ^{is higher than 10 -3} torr (torr), the moisture removal effect may be reduced. That is, the moisture removal is preferably performed in a high vacuum state. If the time of the vacuum treatment process is less than 5 minutes, the water removal effect may fall, and if it exceeds 1 hour, the water removal effect increase is insignificant, while only the process time may be increased.

Second, the process of removing moisture contained in the hole injection layer (HIL) may be a process of vacuum and heat treatment in a vacuum chamber. The vacuum and the heat treatment are performed at the same time, and specifically, ^{it is preferably performed at a temperature of 30 ° C. to 70 ° C., a pressure of 10 -3} or less torr, and a time condition of 5 minutes to 30 minutes.

When the temperature of the vacuum and heat treatment process exceeds 70° C., pinholes or the like may be generated on the surface of the organic material due to the rapid temperature rise in the vacuum, thereby reducing the morphology of the surface of the organic material. If the pressure of the vacuum and heat treatment process ^{is higher than 10 -3} torr (torr), the moisture removal effect may be reduced. If the time of the vacuum and heat treatment process is less than 5 minutes, the moisture removal effect may be reduced, and if it exceeds 30 minutes, the morphology of the surface of the organic material may be reduced.

Third, the process of removing moisture contained in the hole injection layer (HIL) may be performed by vacuuming in a vacuum chamber and then heat-treating at atmospheric pressure.

The process of vacuuming in the vacuum chamber, as in the first method described above, is performed at a temperature of 5° C. to less than 30° C., ^{a pressure of 10 -3} or less torr, and a time condition of 5 minutes to 1 hour. desirable.

After the vacuum treatment, the heat treatment at atmospheric pressure is preferably performed at a temperature of 100° C. to 250° C., and a time condition of 10 minutes to 1 hour.

If the temperature of the heat treatment process at atmospheric pressure is less than 100° C., moisture is not vaporized and thus a moisture removal effect cannot be obtained, and when it exceeds 250° C., it may damage organic matter. If the time of the heat treatment at atmospheric pressure is less than 10 minutes, a synergistic effect of water removal through heat treatment may not be obtained, and if it exceeds 1 hour, damage may be caused to organic matter.

The vacuum treatment process in each moisture removal process described above is 5 ppm or less, preferably 0.5 ppm or less, after loading the structure in which each organic material is stacked in an inert gas chamber with ^{a pressure of 10 -3} or less torr (torr) It can be made by a process of vacuum treatment. That is, it may be preferable to create an inert gas atmosphere of 5 ppm or less, preferably 0.5 ppm or less, in the chamber before vacuum treatment to prevent additional moisture penetration into the organic layer. The inert gas may be nitrogen gas or argon gas.

As described above, according to an embodiment of the present invention, after laminating the hole injection layer (HIL), a process of removing moisture contained in or on the surface of the hole injection layer (HIL) is additionally performed, whereby the hole By minimizing the moisture content on the surface or inside of the injection layer HIL, it is possible to prevent the device from being deteriorated.

Next, as shown in FIG. 2C , a hole transport layer (HTL) is stacked on the hole injection layer (HIL), and moisture contained in or on the surface of the hole transport layer (HTL) is removed.

The hole transport layer (HTL) is TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-bi-phenyl-4,4'-diamine), NPD (N, N -dinaphthyl-N, N'-diphenyl benzidine), or NPB (N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine), etc. it is not

The hole transport layer HTL may be formed by laminating an organic material using an inkjet process and then baking the stacked organic material.

The inkjet process may be performed in the atmosphere, or may be performed in a chamber in a nitrogen or argon atmosphere. The baking process of the hole transport layer (HTL) may be performed at a temperature of 150° C. or more, preferably 160° C. to 200° C. for 40 minutes or more, but is not necessarily limited thereto.

The hole transport layer (HTL) may be deposited through a deposition process known in the art, such as an evaporation process in a vacuum chamber.

The process of removing moisture contained in the hole transport layer (HTL) is similar to the process of removing moisture contained in the hole injection layer (HIL) as described above. First, vacuum processing in a vacuum chamber, second vacuum and The heat treatment process and the third vacuum process in a vacuum chamber and then the heat treatment process at atmospheric pressure may be performed in any one of the processes. Since the specific process conditions of each process are also the same, a repeated description thereof will be omitted.

As such, according to an embodiment of the present invention, after laminating the hole transport layer (HTL), by additionally performing a process of removing moisture contained in or on the surface of the hole transport layer (HTL), the hole transport layer ( The problem of device deterioration can be prevented by minimizing the moisture content on the surface or inside of the HTL).

Next, as shown in FIG. 2D , an emission layer EML is stacked on the hole transport layer HTL, and moisture contained in or on the surface of the emission layer EML is removed.

The emission layer EML may include a blue emission layer, a green emission layer, or a red emission layer.

The blue light emitting layer may be formed by doping at least one fluorescent host material selected from the group consisting of anthracene derivatives, pyrene derivatives and perylene derivatives with a fluorescent blue dopant, but is not necessarily limited thereto. no.

The green emission layer may be formed by doping a phosphorescent host material made of a carbazole-based compound or a metal complex with a phosphorescent green dopant, but is not limited thereto. The carbazole-based compound may include CBP (4,4-N,N'-dicarbazole-biphenyl), a CBP derivative, mCP (N,N'-dicarbazolyl-3,5-benzene) or an mCP derivative, and the like. The metal complex may include a phenyloxazole (ZnPBO) metal complex or a phenylthiazole (ZnPBT) metal complex.

The red emission layer may be formed by doping with a phosphorescent host material red dopant made of a carbazole-based compound or a metal complex, but is not limited thereto. The red dopant may be formed of a metal complex of iridium (Ir) or platinum (Pt), but is not limited thereto.

In some cases, the light emitting layer EML may be configured to emit white light by including a blue light emitting layer, a green light emitting layer, and a red light emitting layer. In addition, the light emitting layer EML may be configured to emit white light by including a blue light emitting layer and an orange light emitting layer.

The light emitting layer EML may be formed by laminating an organic material using an inkjet process and then baking the stacked organic material.

The inkjet process may be performed in the atmosphere, or may be performed in a chamber in a nitrogen or argon atmosphere. The baking process of the emission layer EML may be performed at a temperature of 100° C. or higher, preferably 120° C. to 170° C. for 5 minutes or longer, but is not necessarily limited thereto.

The light emitting layer EML may be deposited through a deposition process known in the art, such as an evaporation process in a vacuum chamber.

The process of removing the moisture contained in the light emitting layer (EML) is similar to the process of removing moisture contained in the hole injection layer (HIL) as described above. First, vacuum treatment in a vacuum chamber, second vacuum and heat treatment in a vacuum chamber It may be made of any one process of the process of treating, and the process of performing vacuum treatment in a third vacuum chamber and then heat-treating at atmospheric pressure. Since the specific process conditions of each process are also the same, a repeated description thereof will be omitted.

As described above, according to an embodiment of the present invention, after laminating the light emitting layer EML, a process of removing moisture contained in or on the surface of the light emitting layer EML is additionally performed, whereby the light emitting layer EML is The problem of device deterioration can be prevented by minimizing the moisture content on the surface or inside.

Next, as shown in FIG. 2E , an electron transport layer (ETL) is stacked on the emission layer (EML), and moisture contained in or on the surface of the electron transport layer (ETL) is removed.

The electron transport layer (ETL) may be made of an organic material such as oxadiazole, triazole, phenanthroline, benzoxazole or benzthiazole, but is not necessarily limited thereto. it's not going to be

The electron transport layer (ETL) may be formed by laminating an organic material using an inkjet process and then baking the stacked organic material. The inkjet process may be performed in the atmosphere, or may be performed in a chamber in a nitrogen or argon atmosphere.

The electron transport layer (ETL) may be deposited through a deposition process known in the art, such as an evaporation process in a vacuum chamber.

The process of removing moisture contained in the electron transport layer (ETL) is similar to the process of removing moisture contained in the hole injection layer (HIL) as described above. First, vacuum processing in a vacuum chamber, second vacuum and The heat treatment process and the third vacuum process in a vacuum chamber and then the heat treatment process at atmospheric pressure may be performed in any one of the processes. Since the specific process conditions of each process are also the same, a repeated description thereof will be omitted.

As such, according to an embodiment of the present invention, after laminating the electron transport layer (ETL), by additionally performing a process of removing moisture contained in or on the surface of the electron transport layer (ETL), the electron transport layer ( ETL) can be prevented from deteriorating the device by minimizing the moisture content on the surface or inside.

Next, as shown in FIG. 2F , an electron injection layer (EIL) is stacked on the electron transport layer (ETL), and moisture contained in or on the surface of the electron injection layer (EIL) is removed.

The electron injection layer EIL may be formed of lithium fluoride (LiF), lithium quinolate (LiQ), or cesium nitrate (CsNO ₃ ), but is not limited thereto.

The electron injection layer EIL may be formed by laminating an organic material using an inkjet process and then baking the stacked organic material. The inkjet process may be performed in the atmosphere, or may be performed in a chamber in a nitrogen or argon atmosphere.

The electron injection layer (EIL) may be deposited through a deposition process known in the art, such as an evaporation process in a vacuum chamber.

The process of removing moisture contained in the electron injection layer (EIL) is similar to the process of removing moisture contained in the hole injection layer (HIL) as described above. First, a vacuum treatment process in a vacuum chamber, and a second vacuum in the vacuum chamber and a process of heat-treating, and a third process of vacuum-treating in a vacuum chamber and then heat-treating at atmospheric pressure. Since the specific process conditions of each process are also the same, a repeated description thereof will be omitted.

As described above, according to an embodiment of the present invention, after laminating the electron injection layer (EIL), a process of removing moisture contained in or on the surface of the electron injection layer (EIL) is additionally performed, whereby the electron injection layer (EIL) is stacked. By minimizing the moisture content on the surface or inside of the injection layer EIL, it is possible to prevent the device from being deteriorated.

Next, as shown in FIG. 2G , a cathode is formed on the electron injection layer EIL.

The cathode may be made of a metal having a low work function, for example, aluminum (Al), silver (Ag), magnesium (Mg), lithium (Li) or calcium (Ca), but is not necessarily limited thereto. it is not Such a cathode may be formed through a deposition process known in the art, such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

The above is the surface or inside of the organic layer laminated after laminating each of the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL), and the electron injection layer (EIL). Although it has been described with respect to each of the steps for removing the moisture contained in it, the present invention is not necessarily limited thereto. That is, the present invention provides a water removal process for some organic layers of the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL), and the electron injection layer (EIL). includes performing As a result, the present invention provides moisture removal for at least one organic layer of the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL), and the electron injection layer (EIL) including carrying out the process.

In the present invention, the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL), and the electron injection layer (EIL) on the anode are sequentially formed It also includes performing one moisture removal process after lamination.

3A to 3C are cross-sectional views illustrating a manufacturing process of an organic light emitting diode display according to an exemplary embodiment.

First, as can be seen from FIG. 3A , a thin film transistor 200 is formed on a substrate 100 , a planarization layer 300 is formed on the thin film transistor 200 , and a first layer is formed on the planarization layer 300 . A first electrode 400 is formed, and a bank layer 500 is formed on the first electrode 400 .

The substrate 100 may be glass or a transparent plastic that can be bent or bent, for example, polyimide, but is not limited thereto.

The thin film transistor 200 is formed in each of a red (R) pixel, a green (G) pixel, and a blue (B) pixel on the substrate 100 . The thin film transistor 200 includes a gate electrode 210 , a gate insulating layer 220 , a semiconductor layer 230 , a source electrode 240a , a drain electrode 240b , and a protective layer 250 .

The gate electrode 210 may be patterned on the substrate 100 by a patterning method such as a photolithography process, and the gate insulating layer 220 is formed on the entire surface of the substrate including the gate electrode 210 . may be formed by a deposition method such as a PECVD process, the semiconductor layer 230 may be patterned on the gate insulating layer 220 , and the source electrode 240a and the drain electrode 240b may be formed of the semiconductor A pattern may be formed on the layer 230 to face each other, and the passivation layer 250 may be deposited on the entire surface of the substrate including the source electrode 240a and the drain electrode 240b.

A method of forming individual components constituting the thin film transistor 200 may use various methods known in the art. The thin film transistor 200 relates to a driving thin film transistor. Although the drawing shows a driving thin film transistor having a bottom gate structure in which the gate electrode 210 is formed under the semiconductor layer 230 , the gate electrode 210 . ) may be formed on the semiconductor layer 230 to form a driving thin film transistor having a top gate structure.

The planarization layer 300 may be formed on the entire surface of the substrate including the thin film transistor 200 . The planarization layer 300 may be formed of an organic insulating layer such as photoacrylic, but is not limited thereto.

The first electrode 400 is patterned on each of a red (R) pixel, a green (G) pixel, and a blue (B) pixel on the planarization layer 300 . The first electrode 400 may be connected to the drain electrode 240b of the thin film transistor 200 . To this end, a contact hole is formed in the passivation layer 250 and the planarization layer 300 to expose the drain electrode 240b through the contact hole, and the first electrode ( 400) is connected.

Such a first electrode 400 may function as an anode. Therefore, as in the above-described embodiment, the first electrode 400 is a transparent conductive material having high conductivity and work function, for example, indium tin oxide (ITO), indium zinc oxide (IZO), SnO2 or ZnO. It may be made of a transparent conductive material such as Also, the first electrode 400 may be formed through a deposition process known in the art, such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

The bank layer 500 is formed on the first electrode 400 and, in particular, is patterned in a matrix structure to define a pixel area. The bank layer 500 may be patterned through a mask process after depositing an organic insulator.

Next, as shown in FIG. 3B , an organic layer 600 is formed on the first electrode 400 . The organic layer 600 may be patterned on each of a red (R) pixel, a green (G) pixel, and a blue (B) pixel.

The organic layer 600 is formed by stacking a hole injection layer (HIL) on the first electrode 400 as in FIG. 2b described above and removing moisture contained in or on the surface of the hole injection layer (HIL). , as in FIG. 2c above, stacking a hole transport layer (HTL) on the hole injection layer (HIL) and removing moisture contained in or on the surface of the hole transport layer (HTL), as in FIG. 2d described above A light emitting layer (EML) is laminated on the hole transport layer (HTL), moisture contained in the surface or inside of the light emitting layer (EML) is removed, and an electron transport layer (ETL) is formed on the light emitting layer (EML) as in FIG. 2E described above. ) and remove the moisture contained in the surface or inside of the electron transport layer (ETL), and laminate the electron injection layer (EIL) on the electron transport layer (ETL) as in FIG. It may be formed through a process of removing moisture contained in or on the surface of the layer (EIL).

Each organic material constituting the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL) and the electron injection layer (EIL) is a red (R) pixel, green ( After laminating the G) pixel and the blue (B) pixel through an inkjet process or a deposition process, respectively, a moisture removal process may be performed once to form each organic layer. That is, it is not necessary to perform the water removal process for each red (R) pixel, green (G) pixel, and blue (B) pixel for individual organic layers, and the water removal process may be simultaneously performed for all pixels.

In addition, as in the above-described embodiment, the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL), and moisture to some organic layers of the electron injection layer (EIL) A removal process may be performed. In addition, the hole injection layer (HIL), the hole transport layer (HTL), the light emitting layer (EML), the electron transport layer (ETL), and the electron injection layer (EIL) are sequentially stacked on the first electrode 400 . After that, one water removal process may be performed.

Next, as shown in FIG. 3C , a second electrode 700 is formed on the organic layer 600 , and an encapsulation layer 800 is formed on the second electrode 700 .

The second electrode 700 may be formed on the entire surface of the substrate including the organic layer 600 . Such a second electrode 700 may function as a cathode. Accordingly, the second electrode 700 may be made of a metal having a low work function, for example, aluminum (Al), silver (Ag), magnesium (Mg), lithium (Li) or calcium (Ca), etc. It is not necessarily limited thereto. The second electrode 700 may be formed through a deposition process known in the art, such as a sputtering process, an evaporation process, or a metal-organic chemical vapor deposition (MOCVD) process.

The encapsulation layer 800 is formed on the second electrode 700 . The encapsulation layer 800 serves to prevent moisture from penetrating into the organic layer 600 . The encapsulation layer 800 may be formed of a plurality of layers in which different inorganic materials are stacked, or may be formed of a plurality of layers in which inorganic materials and organic materials are alternately stacked. In addition, the encapsulation layer 800 may be formed of a metal layer adhered by an adhesive.

FIG. 4 is a graph showing a change in normalized quantum efficiency (Q.E) according to a change in temperature during a vacuum treatment process for removing moisture from the light emitting layer (EML).

Specifically, FIG. 4 shows each of the red (R) light-emitting layer (EML), the green (G) light-emitting layer (EML), and the blue (B) light-emitting layer (EML) at different temperatures (3° C., 5° C.) after exposure to air. , 30 ℃, 40 ℃) ^{after performing a pressure of 10 -5} torr (torr) and vacuum treatment for 30 minutes, the normalized quantum efficiency was measured.

As can be seen from FIG. 4 , it can be seen that the normalized quantum efficiency is far less than the reference example when vacuum processing is performed at 3° C., but when vacuum processing is performed at 5° C. or higher, the normalized quantum efficiency is the reference example It can be seen that it is excellent close to (reference). Therefore, it can be seen that the vacuum treatment for moisture removal is preferably performed at 5° C. or higher.

Here, the reference example is when the red (R) light emitting layer (EML), the green (G) light emitting layer (EML), and the blue (B) light emitting layer (EML) are not exposed to air, so that the normalized quantum efficiency is 1.00 As such, it is the same in the following experimental results.

FIG. 5 is a graph showing a change in normalized quantum efficiency (Q.E) according to a change in pressure during a vacuum treatment process for removing moisture from the light emitting layer (EML).

Specifically, Figure 5 shows each of the red (R) light-emitting layer (EML), the green (G) light-emitting layer (EML), and the blue (B) light-emitting layer (EML) at different pressures (10 ^-2 Torr, 10 ⁻³ Torr, 10 ⁻⁵ Torr) at a temperature of 20° C. and vacuum treatment for 30 minutes, the normalized quantum efficiency was measured.

As can be seen from FIG. 5 , it can be seen that the normalized quantum efficiency is far below the reference example when vacuum-treated at ^{10 -2} Torr, but when vacuum-treated at ^{10 -3 Torr or less, the normalized quantum efficiency is} It can be seen that the efficiency is excellent close to the reference example. Therefore, it can be seen that the vacuum treatment for moisture removal ^{is preferably performed at 10 -3 Torr or less.}

6 is a graph showing a change in normalized quantum efficiency (Q.E) according to time change during a vacuum treatment process for removing moisture from the light emitting layer (EML).

Specifically, FIG. 6 shows each of the red (R) emitting layer (EML), the green (G) emitting layer (EML), and the blue (B) emitting layer (EML) for different times (3 minutes, 5 minutes) after exposure to air. , 10 min) ^{after performing vacuum treatment at a pressure of 10 −5} Torr and a temperature of 20° C., the normalized quantum efficiency was measured.

As can be seen from FIG. 6 , it can be seen that the normalized quantum efficiency does not reach the reference example in the case of vacuum treatment for 3 minutes. It can be seen that when the vacuum treatment is carried out for 5 minutes or more, it is close to the standard example and is excellent. Therefore, it can be seen that the vacuum treatment for water removal is preferably performed for 5 minutes or more.

The organic light emitting display device according to an embodiment of the present invention described above may be applied to a TV or a mobile device, a flexible display, or a transparent display known in the art.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: substrate 200: thin film transistor
300: planarization layer 400: first electrode
500: bank layer 600: organic layer
700: second electrode 800: encapsulation layer

Claims (11)

laminating an organic layer on a substrate;
It is made including an additional process of removing moisture contained in the surface or inside of the organic layer,
The step of laminating the organic layer is a process of depositing a hole injection layer on the substrate by an inkjet process and then baking at a temperature of 200° C. to 250° C., after laminating a hole transport layer on the hole injection layer by an inkjet process at 160° C. A process of baking at a temperature of ~ 200 ℃, a process of laminating a light emitting layer by an inkjet process on the hole transport layer, a process of baking at a temperature of 120 ℃ ~ 170 ℃, Laminating an electron transporting layer on the light emitting layer by an inkjet process and baking process, and a step of baking after laminating an electron injection layer by an inkjet process on the electron transport layer,
The additional process of removing the moisture is vacuum treatment or heat treatment in a vacuum chamber after the baking process for at least one of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer. process, including
The vacuum treatment or heat treatment process is a method of manufacturing an organic light emitting device that is performed at a temperature of 5° C. to less than 30° C., ^{a pressure of 10 −3} or less torr, and a time condition of 5 minutes to 1 hour. delete laminating an organic layer on a substrate;
It is made including an additional process of removing moisture contained in the surface or inside of the organic layer,
The step of laminating the organic layer is a process of laminating a hole injection layer on the substrate by an inkjet process and then baking at a temperature of 200° C. to 250° C., after laminating a hole transport layer on the hole injection layer by an inkjet process at 160° C. A process of baking at a temperature of ~ 200 °C, a process of laminating a light emitting layer on the hole transport layer by an inkjet process, and then baking at a temperature of 120 °C ~ 170 °C, Laminating an electron transport layer on the light emitting layer by an inkjet process and then baking process, and a step of baking after laminating an electron injection layer by an inkjet process on the electron transport layer,
The additional process of removing the moisture is vacuum treatment or heat treatment in a vacuum chamber after the baking process for at least one of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer. The process of performing the vacuum treatment or heat treatment is carried out at a temperature of 30 ° C. to 70 ° C. ^{, a pressure of 10 -3} or less torr (torr), and a time condition of 5 minutes to 30 minutes. manufacturing method. According to claim 1,
Further comprising a step of heat treatment at atmospheric pressure after the vacuum treatment or heat treatment step,
The process of heat-treating at atmospheric pressure is a method of manufacturing an organic light emitting device performed at a temperature of 100° C. to 250° C., and a time condition of 10 minutes to 1 hour. According to claim 1,
The method of manufacturing an organic light emitting device in which the vacuum chamber is created in an inert gas atmosphere of 5 ppm or less before the vacuum treatment. According to claim 1,
The method of manufacturing an organic light emitting device further comprising a step of forming an anode and a step of forming a cathode on the substrate. forming a thin film transistor on a substrate;
forming a planarization layer on the thin film transistor;
forming a first electrode on the planarization layer;
forming an organic layer on the first electrode; and
and forming a second electrode on the organic layer,
The process of forming the organic layer is made including a process of laminating the organic layer, and an additional process of removing moisture contained in or on the surface of the organic layer,
The step of laminating the organic layer is a process of laminating a hole injection layer on the substrate by an inkjet process and then baking at a temperature of 200° C. to 250° C., after laminating a hole transport layer on the hole injection layer by an inkjet process at 160° C. A process of baking at a temperature of ~ 200 ℃, a process of laminating a light emitting layer by an inkjet process on the hole transport layer, a process of baking at a temperature of 120 ℃ ~ 170 ℃, Laminating an electron transporting layer on the light emitting layer by an inkjet process and baking process, and a step of baking after laminating an electron injection layer by an inkjet process on the electron transport layer,
The additional process of removing the moisture is a process of vacuum treatment or heat treatment in a vacuum chamber after a baking process for at least one of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is made, including
The vacuum treatment or heat treatment is performed at a temperature of 5°C to less than 30°C, ^{a pressure of 10 -3} torr or less, and a time of 5 minutes to 1 hour. delete forming a thin film transistor on a substrate;
forming a planarization layer on the thin film transistor;
forming a first electrode on the planarization layer;
forming an organic layer on the first electrode; and
and forming a second electrode on the organic layer,
The process of forming the organic layer is made including a process of laminating the organic layer, and an additional process of removing moisture contained in or on the surface of the organic layer,
The step of laminating the organic layer is a process of laminating a hole injection layer on the substrate by an inkjet process and then baking at a temperature of 200° C. to 250° C., after laminating a hole transport layer on the hole injection layer by an inkjet process at 160° C. A process of baking at a temperature of ~ 200 ℃, a process of laminating a light emitting layer by an inkjet process on the hole transport layer, a process of baking at a temperature of 120 ℃ ~ 170 ℃, Laminating an electron transporting layer on the light emitting layer by an inkjet process and baking process, and a step of baking after laminating an electron injection layer by an inkjet process on the electron transport layer,
The additional process of removing the moisture is a process of vacuum treatment or heat treatment in a vacuum chamber after a baking process for at least one of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is made, including
The vacuum treatment or heat treatment is performed at a temperature of 30° C. to 70° C. ^{, a pressure of 10 −3} torr or less, and a time of 5 minutes to 30 minutes. 8. The method of claim 7,
After the vacuum treatment or heat treatment step, further comprising a step of heat treatment at atmospheric pressure,
The method of manufacturing an organic light emitting display device, wherein the heat treatment at atmospheric pressure is performed at a temperature of 100° C. to 250° C. and a time period of 10 minutes to 1 hour. 8. The method of claim 7,
The method of manufacturing an organic light emitting display device, wherein the vacuum chamber is created in an inert gas atmosphere of 5 ppm or less before the vacuum treatment.

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