KR102273299B9 - GaN GALLIUM NITRIDE-BASED HIGH POWER TRANSISTOR STRUCTURE FOR HEAT DIFFUSION AND IMPEDANCE MATCHING THEREOF AND METHOD FOR FABRICATING THE SAME - Google Patents
GaN GALLIUM NITRIDE-BASED HIGH POWER TRANSISTOR STRUCTURE FOR HEAT DIFFUSION AND IMPEDANCE MATCHING THEREOF AND METHOD FOR FABRICATING THE SAMEInfo
- Publication number
- KR102273299B9 KR102273299B9 KR1020200050624A KR20200050624A KR102273299B9 KR 102273299 B9 KR102273299 B9 KR 102273299B9 KR 1020200050624 A KR1020200050624 A KR 1020200050624A KR 20200050624 A KR20200050624 A KR 20200050624A KR 102273299 B9 KR102273299 B9 KR 102273299B9
- Authority
- KR
- South Korea
- Prior art keywords
- fabricating
- high power
- gallium nitride
- impedance matching
- same
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020200050624A KR102273299B1 (en) | 2020-04-27 | 2020-04-27 | Gallium nitride-based high power transistor structure for heat diffusion and impedance matching thereof and method for fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020200050624A KR102273299B1 (en) | 2020-04-27 | 2020-04-27 | Gallium nitride-based high power transistor structure for heat diffusion and impedance matching thereof and method for fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR102273299B1 KR102273299B1 (en) | 2021-07-06 |
| KR102273299B9 true KR102273299B9 (en) | 2022-01-17 |
Family
ID=76860566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020200050624A KR102273299B1 (en) | 2020-04-27 | 2020-04-27 | Gallium nitride-based high power transistor structure for heat diffusion and impedance matching thereof and method for fabricating the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102273299B1 (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7514780B2 (en) * | 2006-03-15 | 2009-04-07 | Hitachi, Ltd. | Power semiconductor device |
| JP5241177B2 (en) * | 2007-09-05 | 2013-07-17 | 株式会社オクテック | Semiconductor device and manufacturing method of semiconductor device |
| KR20100008257A (en) * | 2008-07-15 | 2010-01-25 | 알.에프 에이치아이씨 주식회사 | High power semiconductor chip package and method for fabricating the same |
| US9111750B2 (en) | 2013-06-28 | 2015-08-18 | General Electric Company | Over-voltage protection of gallium nitride semiconductor devices |
| JP6123738B2 (en) * | 2014-06-06 | 2017-05-10 | 富士電機株式会社 | Semiconductor device |
| FR3047111B1 (en) | 2016-01-26 | 2018-03-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | ASSEMBLY COMPRISING MIXED INTERCONNECT MEANS COMPRISING INTERMEDIATE INTERCONNECTION ELEMENTS AND METAL SINTERED JOINTS AND METHOD OF MANUFACTURE |
| JP7183591B2 (en) * | 2018-07-02 | 2022-12-06 | 富士電機株式会社 | semiconductor equipment |
-
2020
- 2020-04-27 KR KR1020200050624A patent/KR102273299B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR102273299B1 (en) | 2021-07-06 |
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| GRNT | Written decision to grant | ||
| G170 | Publication of correction |