KR102252412B1 - Laser apparatus for treatment of skin which can adjust the duration of pulse and change the wavelength easily - Google Patents

Abstract

The present invention controls a diode laser generator for generating a diode laser pulse, a laser amplifying unit for amplifying the diode laser pulse transmitted from the diode laser generating unit, and controlling the diode laser generating unit and the laser amplifying unit, A control unit for controlling a duration of a pulse output from, and the diode laser generating unit is arranged to correspond to one or a plurality of diode lasers and the diode laser respectively generating the diode laser pulse, and in the diode laser It provides a laser device for skin treatment comprising one or a plurality of diode laser drivers for variably generating the generated diode laser pulses into pulses having different durations.
Accordingly, laser pulses having various durations can be output by using the variable laser pulse.

Description

Laser apparatus for treatment of skin which can adjust the duration of pulse and change the wavelength easily}

The present invention relates to a laser device for skin treatment with easy control of pulse duration and variable wavelength, and more particularly, easy control of pulse duration including a laser generator for easy control of pulse duration and , It relates to a laser device for skin treatment capable of tunable wavelength.

In recent years, research on the field using lasers has been actively conducted in industry and research sites. These lasers have recently been actively developed in research fields such as skin treatment, spectroscopy, nano-imaging, particle acceleration, and nuclear fusion, as well as life sites such as 3D printing, roughening and communication performances, and industrial sites such as welding, cutting, and surface modification. Has become.

These lasers are required to vary the duration, wavelength, and intensity of the laser according to the intended use. However, the conventional laser device has a problem that requires equipment having an expensive or complex structure in order to vary the duration, wavelength, and intensity of the laser.

Korean Patent Registration No. 10-1898632

An object of the present invention is to provide a laser device for skin treatment, which includes a laser generator for which the duration of the pulse is easily adjusted, the duration of the pulse is easily adjusted, and the wavelength is variable.

According to an aspect of the present invention, the present invention provides a diode laser generation unit for generating a diode laser pulse, a laser amplification unit for amplifying the diode laser pulse transmitted from the diode laser generation unit, and the diode laser generation unit and the laser amplification. And a control unit controlling a unit to control a duration of a pulse output from the laser amplifying unit, and the diode laser generating unit corresponds to one or more diode lasers generating the diode laser pulse and the diode laser, respectively It is disposed so as to provide a laser device for skin treatment, including one or a plurality of diode laser drivers for variably generating diode laser pulses generated by the diode laser into pulses having different durations.

The laser device for skin treatment according to the present invention has the following effects.

First, it is possible to output laser pulses having various durations by using a variable laser pulse.

Second, by using a plurality of diode lasers, it is possible to output laser pulses having different types of wavelengths without changing the amplification medium.

Third, due to its simple structure, the risk of failure or operation error is small.

Fourth, since it is possible to easily generate a variable laser pulse, it is possible to output pulses having various pulse durations to a skin treatment subject. In particular, the structure of the laser amplification unit is very simple, so it is easy to amplify the pulse.

1 is a block diagram of a laser device for skin treatment according to an embodiment of the present invention.
2 is a schematic diagram showing in detail a diode laser generator of the laser device for skin treatment according to FIG. 1.
3 is a schematic diagram showing in detail the pulse generated by the diode laser generator of the laser device for skin treatment according to FIG. 1.
4 is a schematic diagram showing in detail the laser amplification unit of the laser device for skin treatment according to FIG. 1.
5 is a schematic diagram of a laser device for skin treatment according to another embodiment of the present invention.
6 is a schematic diagram of a laser device for skin treatment according to another embodiment of the present invention.

Hereinafter, the present invention will be described in detail by describing a preferred embodiment of the present invention with reference to the accompanying drawings.

1 to 4, the laser device 100 for skin treatment according to an embodiment of the present invention includes a diode laser generating unit 110, a laser amplifying unit 120, and a control unit 130. The laser generating unit 110 includes a first laser generating unit 111 and a second laser generating unit 112. The first laser generator 111 includes a first diode laser driver 111a and a first diode laser 111b, and the second laser generator 112 includes a second diode laser driver 112a and a first diode laser driver. It includes a two-diode laser 112b. Each of the first diode laser 111b and the second diode laser 111a emits a seed laser. That is, the first diode laser 111b and the second diode laser 111a are formed as light sources that generate pulses that are amplified and output through the laser amplifying unit 120, which are the sources of the laser. The laser pulse generated by the first diode laser 111b is controlled by the first diode laser driver 111a, and the laser pulse generated by the second diode laser 112a is the second diode laser driver ( 112b).

The first diode laser 111b and the second diode laser 112b generate diode laser pulses of different wavelengths. The wavelength of the laser emitted from the laser amplifying unit 120 may vary according to the wavelength of the laser transmitted from the laser generating unit 110. Accordingly, by changing the wavelengths of the first diode laser 111b and the second diode laser 112b, the output wavelength of the laser emitted from the laser amplifying unit 120 may be changed. Therefore, the laser device for skin treatment 100 according to the present embodiment can easily adjust the output wavelength by selecting one of the first diode laser 111b and the second diode laser 112b having different wavelengths. .

Of course, the wavelengths of the first diode laser 111b and the second diode laser 112b have a difference in a degree that falls within a range in which amplification is possible in the amplification medium included in the laser generator 120. That is, the difference in wavelength between the first diode laser 111b and the second diode laser 112b falls within a range in which all of the amplification medium can be amplified. Specifically, for example, when the amplification medium included in the laser generating unit 120 is Nd:YAG, the first diode laser 111b and the second diode are in a wavelength range that can be amplified by the Nd:YAG. This means that the wavelength of the laser generated by the diode laser 112b belongs to each. However, the present invention is not limited thereto, and the first diode laser 111b and the second diode laser 112b may generate diode laser pulses of the same wavelength.

In the present embodiment, it was exemplified that the laser generating unit 110 includes two individual diode lasers of the first diode laser 111b and the second diode laser 112b, but included in the laser generating unit 110 The number of individual diode lasers can be changed any number of times. The first diode laser 111b and the second diode laser 112b generate laser pulses through On/Off control.

Referring to FIG. 2A, the first laser generator 111 includes a first diode laser driver 111a and a first diode laser 111b, and the second laser generator 112 And a second diode laser driver 112a and a second diode laser 112b. The first diode laser driver 111a controls the first diode laser 111b to generate a variable laser pulse having a variable pulse duration. The duration of the diode laser pulse generated from the first diode laser 111b is formed from a first duration to a second duration. For example, the laser pulse generated by the first laser generator 111 is formed in picoseconds (ps) to nanoseconds (ns).

In addition, the second diode laser driver 112a controls the second diode laser 112b to generate a variable laser pulse having a variable pulse duration. The duration of the diode laser pulse generated from the second diode laser 112b is formed from a third duration to a fourth duration. In this case, the laser pulse generated by the second laser generating unit 112 has a longer duration than the laser pulse generated by the first laser generating unit 111. That is, the third duration and the fourth duration are longer than the first duration and the second duration. For example, the laser pulse generated by the second laser generating unit 112 is formed in nanoseconds (ns) to milliseconds (ms). At this time, even if it falls within the same nanosecond (ns) range, nanoseconds (ns) generated by the second laser generation unit 112 than laser pulses of the nanosecond (ns) range generated by the first laser generation unit 111 The duration of the laser pulse in the range is long. Of course, the duration of the laser pulses generated by the first laser generating unit 111 and the second laser generating unit 112 can be changed as much as possible through driver replacement.

The first diode laser driver 111a controls the first diode laser 111b to adjust the laser pulse generated by the first diode laser 111b in picoseconds (ps) to nanoseconds (ns) to adjust the time difference. And release them sequentially. In addition, the second diode laser driver 112a controls the second diode laser 112b to adjust the laser pulse generated by the second diode laser 112b in nanoseconds (ns) to milliseconds (ms), and the time difference And release them sequentially. In this case, laser pulses sequentially emitted from the first diode laser 111b and the second diode laser 112b are transmitted to the laser amplification unit 120.

2B shows another structure of the diode laser generator 110. (b) is almost similar to the case of (a), but the laser pulses emitted from the first laser generating unit 111 and the second laser generating unit 112 are transmitted to the laser amplifying unit 120 in the same path. There is a difference in that it is delivered. This difference is indicated by the ninth mirror 113 that adjusts the path of the laser pulses emitted from the first laser generating unit 111 and the second laser generating unit 112. That is, the ninth mirror 113 allows the laser pulses generated by the first laser generating unit 111 and the second laser generating unit 112 to be transmitted to the laser amplifying unit 120 in the same path. Adjust the route. Of course, the ninth mirror 113 generates laser pulses generated by the laser generators 111 and 112 that emit laser pulses of wavelengths that can be amplified according to the type of amplification medium disposed in the laser amplification unit 120. It is transmitted to the laser amplification unit 120. At this time, the ninth mirror 113 transmits the laser pulses generated by the first laser generating unit 111 or the second laser generating unit 112 to the laser amplifying unit 120 in the front and rear or left and right directions. Will move. The ninth mirror 113 is moved by a motor controlled by the controller 130. In this embodiment, the ninth mirror 113 is one, and while moving, the path of the laser pulses generated by the first laser generating unit 111 and the second laser generating unit 112 is changed. , A plurality of the ninth mirrors 113 may be fixed and installed according to the number of the diode lasers.

In this embodiment, the first laser generation unit 111 and the second laser generation unit 112 are included in the diode laser generation unit 110 as an example, but the diode laser generation unit 110 It may include only the first laser generation unit 111 or only the second laser generation unit 112. That is, when the diode laser generating unit 110 includes only the first laser generating unit 111, the laser pulse generated by the first diode laser 111b is adjusted in picoseconds (ps) to nanoseconds (ns). To release. And when the diode laser generating unit 110 includes only the second laser generating unit 112, the laser pulse generated by the second diode laser 112b is adjusted in nanoseconds (ns) to milliseconds (ms). Emits.

Of course, even if the laser generating unit 110 includes the first laser generating unit 111 and the second laser generating unit 112 as shown in FIGS. 2A and 2B, the first laser is generated. By operating only one of the unit 111 and the second laser generating unit 112, only a pulse of picoseconds (ps) to nanoseconds (ns) is emitted, or only pulses of nanoseconds (ns) to milliseconds (ms) It is possible to emit. That is, only one of the first laser generating unit 111 and the second laser generating unit 112 is operated to generate the first laser generating unit 111 and the second laser in the laser generating unit 110. Only one of the parts 112 may have the same effect as that installed.

3, the first diode laser driver 111a controls the first diode laser 111b, and the second diode laser driver 112a controls the second diode laser 112b to be variable. A predetermined variable laser pulse having a pulse duration is formed. The duration of the diode laser pulse generated from the first diode laser 111b is controlled by the first diode laser driver 112a from a first duration to a second duration. In addition, the duration of the diode laser pulse generated from the second diode laser 112b is controlled by the second diode laser driver 112a from a third duration to a fourth duration. In this case, the variable laser pulses that are controlled by the second diode laser driver 112a and generated from the second diode laser 112b are controlled by the first diode laser driver 111a to be controlled by the first diode laser driver 111a. The duration is longer than the variable laser pulse generated from (111b). That is, the third duration and the fourth duration are longer than the first duration and the second duration. Of course, the duration of the laser pulses generated from the first diode laser 111b and the second diode laser 112b can be changed as much as possible by the diode laser drivers used.

Specifically, the first diode laser driver 111a generates laser pulses in a wavelength range of 100 picoseconds (ps) or more and less than 10 nanoseconds (ns), and the second diode laser driver 112a is 10 nanoseconds or more and 10 millimeters. It generates laser pulses in the wavelength range of seconds (ms) or less. That is, the variable laser pulse has a duration of 100 picoseconds (ps) to 10 milliseconds (ms). In the present embodiment, the duration of the variable laser pulse is 100 picoseconds to 10 milliseconds (ms), but the duration of the variable laser pulse is changed by changing the diode laser drivers 111a and 112a. You can change it anytime you want.

In addition, the duration of the variable laser pulse may belong to only the picosecond range or the nanosecond range, and may belong to both the picosecond range and the nanosecond range. That is, the duration of the variable laser pulse may be formed to belong to only one time unit or may be formed to include several time ranges. The variable laser pulse may change the diode laser drivers 111a and 112a to variously adjust the duration of laser pulses generated by the first diode laser 111b and the second diode laser 112b.

The laser amplification unit 120 includes a first beam splitter 123, a first amplification medium 121a, a first mirror 122a, a first wave plate 124, a second mirror 122b, and a second amplification medium (121b), third mirror (122c), fourth mirror (122d), third amplification medium (121c), fifth mirror (122e), sixth mirror (122f), fourth amplification medium (121d), seventh The mirror 122g, the eighth mirror 122h, the first lens 125a, the second lens 125b, the first pumping lamp 126a, the second pumping lamp 126b, and the second harmonic wave generator 127 ). The first beam splitter 123 transmits P-polarized light and reflects S-polarized light. Therefore, since the laser pulse supplied from the laser generating unit 110 is a P wave, it passes through the first beam splitter 123 as it is. In addition, the first beam splitter 123 is disposed on the same axis as the traveling direction of the laser pulse supplied from the laser generating unit 110. Of course, the arrangement of the first beam splitter 123 may be changed. Other roles of the first beam splitter 123 will be described later.

The first amplification medium 121a serves to amplify the laser pulse supplied from the laser generating unit 110 while passing through a single or multiple times. The first pumping lamp 126a illuminates the first amplification medium 121a to excite ions in the first amplification medium 121a. The first pumping lamp 126a is disposed to be spaced apart from the first amplification medium 121a. The first amplification medium 121a is formed in a rod structure. In addition, the first amplification medium 121a is formed of Nd:YAG (Neodymium: Yttrium Aluminum Garnet) or Pr:YLF (Paraseodymium: Yttrium Lithium Fluoride). For example, when the laser wavelength supplied from the laser generator 110 is 946 nm, 1064 nm, or 1319 nm, the first amplification medium 121a is formed of Nd:YAG. In addition, when the laser wavelength supplied from the laser generating unit 110 is 523 nm, 607 nm, or 640 nm, the first amplification medium 121a is formed of Pr:YLF. However, the present invention is not limited thereto, and the type, structure, and shape of the first amplification medium 121a may be changed as much as possible.

In addition, the first amplification medium 121a is disposed on the same axis as the first beam splitter 123. Accordingly, the laser pulse transmitted through the first beam splitter 123 is first amplified while passing through the first amplification medium 121a.

The first mirror 122a is disposed on the same axis as the first beam splitter 123 and the first amplification medium 121a. Accordingly, all reflection mirrors reflect the first amplified laser pulse through the first amplification medium 121a in the direction of the first amplification medium 121a. The first mirror 122a serves to return the first amplified laser pulse while passing through the first amplification medium 121a to amplify it once again by the first amplification medium 121a.

In this case, a first wave plate 124 is disposed between the first amplification medium 121a and the first mirror 122a. The first wave plate 124 is formed of a quarter wave plate (QWP) that changes the phase of the wave passing through the first wave plate 124 by 1/4 wavelength. That is, the first wave plate 122c changes the phase of the laser pulse toward the first mirror 122a by passing through the first amplification medium 121a by 1/4 wavelength, and the first mirror 122a ) To change the phase of the laser pulse reflected back to the first amplification medium 121a again by 1/4 wavelength. Accordingly, the P wave supplied from the laser generating unit 110 passes through the first wave plate 124 twice and is changed to an S wave. This is to change the path of the laser pulse by reflecting rather than transmitting transmission when returning to the first beam splitter 123 again.

After passing through the first wave plate 124 twice, the laser pulse returned to the first amplification medium 121a is second amplified while passing through the first amplification medium 121a. The path of the second amplified laser pulse is adjusted by the first beam splitter 123. That is, the second amplified laser pulse is reflected by the first beam splitter 123 and the path is changed by 90 degrees.

The second mirror 122b is formed above the first beam splitter 123. Accordingly, the laser pulse reflected by the first beam splitter 123 is reflected by the second mirror 122b. The second mirror 122b is disposed so that the laser pulse supplied from the first beam splitter 123 is reflected in the direction of the second amplification medium 121b.

The second amplification medium 121b serves to third amplify the laser pulse reflected from the second mirror 122b. The second amplification medium 121b is disposed to be spaced apart from the first amplification medium 121a. Ions in the second amplification medium 121b may be excited by the first pumping lamp 126a. The second amplification medium 121b is formed in a rod structure. In addition, the second amplification medium 121b is formed of Nd:YAG or Pr:YLF. For example, when the laser wavelength supplied from the laser generator 110 is 946 nm, 1064 nm, or 1319 nm, the second amplification medium 121b is formed of Nd:YAG. In addition, when the laser wavelength supplied from the laser generator 110 is 523 nm, 607 nm, or 640 nm, the second amplification medium 121b is formed of Pr:YLF. However, the present invention is not limited thereto, and the type, structure, and shape of the second amplification medium 121b may be changed as much as possible.

In addition, the second amplification medium 121b is disposed above the first amplification medium 121a. In addition, the second amplification medium 121b is disposed on the same axis as the second mirror 122b. That is, the second amplification medium 121b may be disposed under the first amplification medium 121a according to the arrangement position of the second mirror 122b.

The third mirror 122c is disposed to face the second mirror 122b with the second amplification medium 121b interposed therebetween. In addition, the third mirror 122c reflects the third amplified laser pulse while passing through the second amplification medium 121b to adjust a path. That is, the third mirror 122c serves to change the path by 90 degrees by reflecting the laser pulse passing through the second amplification medium 121b. Of course, the reflection angle of the laser pulse reflected from the third mirror 122c can be changed. The third mirror 122c is also disposed on the same axis as the second mirror 122b and the second amplification medium 121b.

The fourth mirror 122d reflects the laser pulse supplied from the third mirror 122c toward the third amplification medium 121c. In this case, a path of the laser pulse from the third mirror 122c to the fourth mirror 122d may further include lens units 125a and 125b for adjusting the spatial size of the laser pulse. The lens units 125a and 125b may include a first lens 125a and a second lens 125b. The lens units 125a and 125b adjust the distance between the first lens 125a and the second lens 125b to control the laser pulse from the third mirror 122c to the fourth mirror 122d. Adjust the size of the space.

The third amplification medium 121c serves to fourth amplify the laser pulse reflected from the fourth mirror 122b. The third amplification medium 121c is disposed to be spaced apart from the fourth amplification medium 121d. Ions in the third amplification medium 121c may be excited by the second pumping lamp 126b. The third amplification medium 121c is formed in a rod structure. In addition, the third amplification medium 121c is formed of Nd:YAG or Pr:YLF. For example, when the laser wavelength supplied from the laser generator 110 is 946 nm, 1064 nm, or 1319 nm, the third amplification medium 121c is formed of Nd:YAG. In addition, when the laser wavelength supplied from the laser generator 110 is 523 nm, 607 nm, or 640 nm, the third amplification medium 121c is formed of Pr:YLF. However, the present invention is not limited thereto, and the structure and shape of the third amplification medium 121c may be changed as much as possible.

The fifth mirror 122e is disposed to face the fourth mirror 125b with the third amplification medium 121c interposed therebetween. The fifth mirror 122e adjusts a path by reflecting a fourth amplified laser pulse while passing through the third amplification medium 121c. That is, the fifth mirror 122e serves to change the path by 90 degrees by reflecting the laser pulse passing through the third amplification medium 121c. Of course, the angle of reflection of the laser pulse reflected from the fifth mirror 122e can be changed. The fifth mirror 122e is disposed on the same axis as the fourth mirror 122d and the third amplification medium 121c.

The sixth mirror 122f reflects the laser pulse supplied from the fifth mirror 122e toward the fourth amplification medium 121d. In this embodiment, the sixth mirror 122f is formed separately from the fifth mirror 122e, but the fifth mirror 122e and the sixth mirror 122f may be formed as one mirror. .

The fourth amplification medium 121d serves to amplify a fifth laser pulse reflected from the sixth mirror 122f. The fourth amplification medium 121d is disposed to be spaced apart from the third amplification medium 121c. Ions in the fourth amplification medium 121d may be excited by the second pumping lamp 126b. The fourth amplification medium 121d is formed in a rod structure. In addition, the fourth amplification medium 121d is formed of Nd:YAG or Pr:YLF. For example, when the laser wavelength supplied from the laser generator 110 is 946 nm, 1064 nm, or 1319 nm, the fourth amplification medium 121d is formed of Nd:YAG. In addition, when the laser wavelength supplied from the laser generator 110 is 523 nm, 607 nm, or 640 nm, the fourth amplification medium 121d is formed of Pr:YLF. However, the present invention is not limited thereto, and the structure and shape of the fourth amplification medium 121d may be changed as much as possible.

The seventh mirror 122g is disposed to face the sixth mirror 122f with the fourth amplification medium 121d interposed therebetween. In addition, the seventh mirror 122g reflects the laser pulse passing through the fourth amplification medium 121d to adjust a path in the direction of the eighth mirror 122h.

The eighth mirror 122h is disposed on one side of the seventh mirror 122g, and controls the path of the laser pulse supplied from the seventh mirror 122g. The laser pulse whose path is adjusted in the eighth mirror 122h is output to the laser amplifying unit 120. However, the present invention is not limited thereto, and a laser pulse may be directly output from the seventh mirror 122g to the laser amplifying unit 120.

The second harmonic generator (SHG) 127 changes the wavelength of the laser output from the seventh mirror 122g or the eighth mirror 122h. The second harmonic generator 127 is disposed in a path along which a laser pulse output from the seventh mirror 122g or the eighth mirror 122h travels. The second harmonic generator 127 changes the wavelength of the laser output from the eighth mirror 122h, similar to a known wavelength change method.

The control unit 130 serves to control the diode laser generating unit 110 and the laser amplifying unit 120. That is, the control unit 130 controls the duration of the diode laser pulse generated by applying signals to the first laser generating unit 111 and the second laser generating unit 112. In addition, the control unit 130 controls the intensity of the diode laser pulse generated by applying a signal to the laser amplifying unit 120.

In addition, the control unit 130 applies signals to the first pumping lamp 126a and the second pumping lamp 126b of the laser amplifying unit 120 to provide the first amplifying medium 121a and the second amplifying medium 121b. ), the state of the third amplification medium 121c and the fourth amplification medium 121d may be adjusted. In addition, when the laser pulse output from the laser amplification unit 120 does not have a required energy level, the control unit 130 may transmit a signal to the laser generation unit 110 to control the generated laser pulse.

The laser device for skin treatment 100 according to the present embodiment can easily change the duration of the diode laser pulse generated by the diode lasers 111b and 112b in the laser generating unit 110, and the laser generating unit ( By having a structure capable of repeatedly amplifying the laser pulse generated by 110) several times, various types of diode laser pulses can be generated, and the laser pulse of small energy generated by the laser generator 110 is converted to a large energy. There is an advantage that can be amplified with a laser pulse of.

In FIG. 4, one first pumping lamp 126a and one second pumping lamp 126b are disposed, but the present invention is not limited thereto. The first pumping lamp 126a and the second pumping lamp 126b each have a structure including two lamps, so that each lamp of the first pumping lamp 126a is the first amplification medium 121a and Light is irradiated to the second amplification medium 121b, and each lamp of the second pumping lamp 126b irradiates light to the third amplification medium 121c and the fourth amplification medium 121d. have. In this case, it is possible to apply more pumping energy to the laser amplifying unit 120, and thus, there is an effect of easily producing a higher output.

Referring to FIG. 5, a laser device 200 for skin treatment according to another embodiment of the present invention includes a laser generating unit 210, a laser amplifying unit 220, and a control unit 230. In the laser device 200 for skin treatment according to the present embodiment, the laser generation unit 210 and the control unit 230 are similar to the laser device 100 for skin treatment according to FIG. 4, and thus a description thereof will be omitted.

The laser amplification unit 220 includes a first beam splitter 223a, a first amplification medium 221a, a first mirror 222a, a first wave plate 224a, a second mirror 222b, and a second wave plate. (224b), second amplification medium 221b, first pumping lamp 226, third mirror 222c, second beam splitter 223b, third wave plate 224c, first lens 225a, And a second lens 225b and a fourth mirror 222d. Although not shown in the drawing, a second harmonic generator (not shown) as in FIG. 1 may be further included. The first beam splitter 223a transmits P-polarized light and reflects S-polarized light. Therefore, since the laser pulse supplied from the laser generating unit 210 is a P wave as in the laser generating unit 110 according to FIG. 4, it passes through the first beam splitter 223a as it is. In addition, the first beam splitter 223a is disposed on the same axis as the traveling direction of the laser pulse supplied from the laser generating unit 210. Of course, the arrangement of the first beam splitter 223a may be changed.

The first amplification medium 221a serves to amplify the laser pulse supplied from the laser generator 210. The first pumping lamp 226 illuminates the first amplification medium 221a to excite ions in the first amplification medium 221a. The first pumping lamp 226a is disposed to be spaced apart from the first amplification medium 221a. The first amplification medium 221a is formed in a rod structure. In addition, the first amplification medium 221a is formed of Nd:YAG. However, in the present invention, the structure and shape of the first amplification medium 221a can be changed as much as possible.

In addition, the first amplification medium 221a is disposed on the same axis as the first beam splitter 223a. Accordingly, the laser pulse transmitted through the first beam splitter 223a is first amplified while passing through the first amplification medium 221a.

The first mirror 222a is disposed on the same axis as the first beam splitter 223a and the first amplification medium 221a. In addition, the first mirror 222a is disposed to face the first beam splitter 223a and the first amplification medium 221a therebetween. In addition, all reflection mirrors reflect the first amplified laser pulse through the first amplification medium 221a in the direction of the first amplification medium 221a. The first mirror 222a serves to return the first amplified laser pulse while passing through the first amplification medium 221a to amplify it once again by the first amplification medium 121a.

At this time, a first wave plate 224a is disposed between the first amplification medium 221a and the first mirror 222a. The first wave plate 124 is formed of a quarter wave plate (QWP) that changes the phase of the wave passing through the first wave plate 224a by 1/4 wavelength. And after passing through the first amplification medium (221a), the laser pulse passing through the first wave plate (224a) toward the first mirror (222a) and reflected by the first mirror (222a), the first The laser pulse directed to the wave plate 224a is circularly polarized and proceeds. That is, the first wave plate 224a changes the phase of the laser pulse toward the first mirror 222a by passing through the first amplification medium 221a by 1/4 wavelength, and the first mirror 222a ) To change the phase of the laser pulse reflected back to the first amplification medium 221a again by 1/4 wavelength. Accordingly, the P wave supplied from the laser generating unit 210 is changed to an S wave while passing through the first wave plate 224a twice. This is to change the propagation path of the laser pulse by reflecting it without transmitting it when returning back to the first beam splitter 223a.

After passing through the first wave plate 224a twice, the laser pulse returned to the first amplification medium 221a is second amplified while passing through the first amplification medium 221a. The path of the second amplified laser pulse is adjusted in the first beam splitter 223a. That is, the second amplified laser pulse is reflected by the first beam splitter 223a so that the path is changed by 90 degrees.

The second mirror 222b is disposed on one side where the path of the first beam splitter 223a is changed by 90 degrees. Accordingly, the laser pulse reflected by the first beam splitter 223a is reflected by the second mirror 222b. The second mirror 222b is disposed so that the laser pulse supplied from the first beam splitter 223a is reflected in the direction of the second amplification medium 221b.

The second wave plate 224b changes the phase of the laser pulse reflected from the second mirror 222b and directed toward the second amplification medium 221b. In this case, the second wave plate 224b is formed of a half wave plate (HWP) unlike the first wave plate 224a. That is, the laser pulse supplied to the second wave plate 224b is an S wave, and the phase of the laser pulse passing through the second wave plate 224b is changed by 1/2 wavelength to become a P wave. This allows the laser pulse reflected from the second mirror 224b to pass through the second beam splitter 223b disposed to face the second mirror 224b with the second wave plate 224b interposed therebetween. It is for sake.

The second beam splitter 223b is disposed between the second wave plate 224b and the second amplification medium 221b. Since the laser pulse passing through the second wave plate 224b is a P wave, the second beam splitter 223b transmits it without reflecting it.

The first lens 225a and the second lens 225b are disposed between the second beam splitter 223b and the second wave plate 224b. The first lens 225a and the second lens 225b adjust the spatial magnitude of the laser pulse reflected from the second mirror 222b.

The second amplification medium 221b serves to third amplify the laser pulse supplied through the second beam splitter 223b. The first pumping lamp 226 illuminates the second amplification medium 221b to excite ions in the second amplification medium 221b. The first pumping lamp 226 is disposed to be spaced apart from the second amplification medium 221b. The second amplification medium 221b is formed in a rod structure. In addition, the second amplification medium 221b is formed of Nd:YAG. However, in the present invention, the structure and shape of the second amplification medium 221b can be changed as much as possible.

The third mirror 222c serves to reflect the third equal width laser pulse while passing through the second amplification medium 221b to return to the direction of the second amplification medium 221b. In this case, a third wave plate 224c is disposed between the third mirror 222c and the second amplification medium 221b. The third wave plate 224c is formed as a quarter wave plate like the first wave plate 224a. Therefore, while proceeding from the second amplification medium 221b to the third mirror 222c, the phase of the laser pulse changes to a quarter wavelength, and from the third mirror 222c to the second amplification medium 221b. Upon returning, the phase of the laser pulse is changed by 1/4 wavelength. And after passing through the second amplification medium (221b), the laser pulse passing through the third wave plate (224c) toward the third mirror (222c) and reflected by the third mirror (222c), the third The laser pulse directed to the wave plate 224c is circularly polarized and proceeds. That is, the waveform of the laser pulse returning to the second amplification medium 221b is changed from P wave to S wave.

The second beam splitter 223b adjusts a path by reflecting a laser pulse reflected from the third mirror 222c and passing through the second amplification medium 221b to amplify a fourth laser pulse. The laser pulse whose path is adjusted by being reflected by the second beam splitter 223b is reflected and output to a fourth mirror 222d disposed at one side of the second beam splitter 223b.

The device 200 according to the present embodiment has an advantage of having a simpler structure than the device 100 according to FIG. 1, although the number of amplification times is less once compared to the device 100 according to FIG. 4. In addition, since there are four amplifications, it is possible to amplify the low energy laser pulse generated by the laser generator 210 into a laser pulse having a sufficiently large energy.

Referring to FIG. 6, a laser device for skin treatment 300 according to another embodiment of the present invention includes a laser generating unit 310, a laser amplifying unit 320, and a control unit 330. Since the laser generating unit 310 and the control unit 330 are similar to the laser device 100 for skin treatment according to FIG. 4, descriptions thereof will be omitted.

The laser amplification unit 320 includes a first beam splitter 323a, a first amplification medium 321a, a first mirror 322a, a second mirror 322b, a first lens 325a, and a second lens 325b. ), a second amplification medium 321b, a first pumping lamp 326, a second beam splitter 323b, a first wave plate 324, a third mirror 322c, and a fourth mirror 322d. . Although not shown in the drawing, a second harmonic generator (not shown) as in FIG. 1 may be further included. The first beam splitter 323a transmits P-polarized light and reflects S-polarized light. Therefore, since the laser pulse supplied from the laser generating unit 310 is a P wave as in the laser generating unit 110 of FIG. 4, it passes through the first beam splitter 323a as it is. In addition, the first beam splitter 323a is disposed on the same axis as the traveling direction of the laser pulse supplied from the laser generating unit 310. Of course, the arrangement of the first beam splitter 323a may be changed.

The first amplification medium 321a serves to amplify the laser pulse supplied from the laser generator 310. The first pumping lamp 326 illuminates the first amplification medium 321a to excite ions in the first amplification medium 321a. The first pumping lamp 326 is disposed to be spaced apart from the first amplification medium 321a. The first amplification medium 321a is formed in a rod structure. In addition, the first amplification medium 321a is formed of Nd:YAG. However, in the present invention, the type, structure and shape of the first amplification medium 321a can be changed as much as possible.

In addition, the first amplification medium 321a is disposed on the same axis as the first beam splitter 323a. Accordingly, the laser pulse transmitted through the first beam splitter 323a is first amplified while passing through the first amplification medium 321a.

The first mirror 322a is disposed to face the first beam splitter 323a with the first amplification medium 321a interposed therebetween. The first mirror 322a changes a path by reflecting the laser pulse passing through the first amplification medium 321a.

The second mirror 322b reflects the laser pulse whose path has been changed by the first mirror 322a to change the path again. The second mirror 322b is disposed on one side of the first mirror 322a.

The second amplification medium 321b serves to second amplify the laser pulse reflected from the second mirror 322b. The second amplification medium 321b is disposed to be spaced apart from the first amplification medium 321a. The first pumping lamp 326 illuminates the second amplification medium 321b to excite ions in the second amplification medium 321b. The first pumping lamp 326 is disposed to be spaced apart from the second amplification medium 321b. The first amplification medium 321b is formed in a rod structure. In addition, the first amplification medium 321b is formed of Nd:YAG. However, in the present invention, the type, structure, and shape of the first amplification medium 321b can be changed as much as possible.

In addition, the second amplification medium 321b is disposed on the same axis as the second mirror 322b. Accordingly, the laser pulse reflected from the second mirror 322b is amplified for the second time while passing through the second amplification medium 321b.

The first lens 325a and the second lens 325b are disposed between the second mirror 322b and the second amplification medium 321b. The first lens 325a and the second lens 325b adjust the spatial magnitude of the laser pulse reflected from the second mirror 322b.

The second beam splitter 323b is disposed to face the second mirror 322b with the second amplification medium 321b interposed therebetween. The second beam splitter 323b transmits the second amplified laser pulse because it is a P wave.

The third mirror 322c changes a path by reflecting the laser pulse transmitted through the second beam splitter 323b. The third mirror 322c is disposed to face the second amplification medium 321b with the second beam splitter 323b therebetween.

The first wave plate 324 is disposed between the second beam splitter 323b and the third mirror 322c. The first wave plate 324 is formed as a half wave plate. Accordingly, the waveform of the laser pulse passing through the first wave plate 324 is changed from P wave to S wave.

The third mirror 322c is disposed to face the second beam splitter 323b with the first wave plate 324 interposed therebetween. In addition, the third mirror 322c is disposed on one side of the first beam splitter 323a. The laser pulse reflected by the third mirror 322c and whose path is changed is reflected back to the first beam splitter 323a. The laser pulse reflected by the first beam splitter 323a is directed to the first amplification medium 321a.

The laser pulse that is amplified by a third while passing through the first amplification medium 321a is reflected by the first mirror 322a to change a path. The laser pulse whose path is changed by being reflected by the first mirror 322a is reflected by the second mirror 322b and is directed to the second amplification medium 321b while the path is changed.

The fourth amplified laser pulse passing through the second amplification medium 321b is reflected by the second beam splitter 323b to change the path. Since the waveform has been changed to an S wave while passing through the first wave plate 324, the laser pulse cannot pass through the second beam splitter 323b and is reflected, so that the path is changed.

The fourth mirror 322d is disposed on one side of the second beam splitter 323b. The fourth mirror 322d changes and outputs the path of the laser pulse reflected from the second beam splitter 323b.

The device 300 according to the present embodiment has the same number of amplification times as the device 200 according to FIG. 4 as compared to the device 200 according to FIG. 4, but the number of wave plates is smaller than the device 200 according to FIG. There is an advantage.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those of ordinary skill in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

100, 200, 300,: laser device for skin treatment
110, 210, 310: laser generation unit
111: first laser generation unit
111a: first diode laser driver
111b: first diode laser
112: second laser generation unit
112a: second diode laser driver
112b: second diode laser
120, 220, 320: laser amplification unit
121a, 221a, 321a: first amplification medium
121b, 221b, 321b: second amplification medium
121c: third amplification medium
121d: fourth amplification medium
122a, 222a, 322a: first mirror
122b, 222b, 322b: second mirror
122c, 222c, 322c: third mirror
122d, 222d, 322d: 4th mirror
122e: fifth mirror
122f: 6th mirror
122g: 7th mirror
122h: Mirror 8
123a, 223a, 323a: first beam splitter
223b, 323b: second beam splitter
124a, 224a, 324a: first wave plate
224b: second wave plate
224c: third wave plate
125a, 225a, 325a: first lens
125b, 225b, 325b: second lens
126a, 226, 326: first pumping lamp
126b: second pumping ramp
127: second harmonic wave generator
130, 230, 330: control unit

Claims (9)

A diode laser generator for generating a diode laser pulse;
A laser amplifying unit amplifying the diode laser pulse transmitted from the diode laser generating unit; And
And a control unit controlling the diode laser generating unit and the laser amplifying unit to control a duration of a pulse output from the laser amplifying unit,
The diode laser generator,
One or a plurality of diode lasers generating the diode laser pulses; And
It includes one or a plurality of diode laser drivers arranged to correspond to the diode lasers, respectively, and variably generating diode laser pulses generated by the diode laser into pulses having different durations,
The laser amplification unit,
A first amplification medium for first amplifying the pulses supplied from the laser generator;
A first mirror disposed so that the first amplified pulse is reflected while passing through the first amplification medium and returns to the direction of the first amplification medium;
A first beam splitter disposed to face the first mirror with the first amplification medium therebetween, and adjusting a path of a second amplified pulse by returning to and passing through the first amplification medium;
A first wave plate disposed between the first mirror and the first beam splitter to change the polarization or phase of a passing pulse;
A second mirror for transmitting a pulse whose path is adjusted by the first beam splitter toward a second amplification medium;
The second amplification medium disposed to be spaced apart from the first amplification medium and configured to third amplify the pulses supplied from the second mirror;
A first pumping lamp disposed to be spaced apart from the first amplification medium and the second amplification medium, and illuminating light to the first amplification medium and the second amplification medium;
A third mirror disposed to face the second mirror with the second amplification medium interposed therebetween, and adjusting a path by reflecting a third amplified pulse while passing through the second amplification medium;
A fourth mirror that transmits a pulse whose path is adjusted in the third mirror toward a third amplification medium;
A third amplifying medium for a fourth amplifying the pulse supplied from the fourth mirror;
A fifth mirror disposed to face the fourth mirror with the third amplification medium interposed therebetween, and adjusting a path by reflecting a fourth amplified pulse while passing through the third amplification medium;
A sixth mirror that sends a pulse whose path is adjusted in the fifth mirror toward a fourth amplification medium;
A fourth amplification medium for amplifying a fifth pulse supplied from the sixth mirror;
A second pumping lamp disposed to be spaced apart from the third amplification medium and the fourth amplification medium, and illuminating light to the third amplification medium and the fourth amplification medium; And
And a seventh mirror disposed to face the sixth mirror with the fourth amplification medium therebetween, and to adjust a path by reflecting a pulse passing through the fourth amplification medium,
The pulse supplied from the laser generating unit passes through the first beam splitter and is directed toward the first amplification medium,
Laser device for skin treatment. A diode laser generator for generating a diode laser pulse;
A laser amplifying unit amplifying the diode laser pulse transmitted from the diode laser generating unit; And
And a control unit controlling the diode laser generating unit and the laser amplifying unit to control a duration of a pulse output from the laser amplifying unit,
The diode laser generator,
One or a plurality of diode lasers generating the diode laser pulses; And
It includes one or a plurality of diode laser drivers arranged to correspond to the diode lasers, respectively, and variably generating diode laser pulses generated by the diode laser into pulses having different durations,
The laser amplification unit,
A first amplification medium for first amplifying the pulses supplied from the laser generator;
A first mirror disposed so that the first amplified pulse is reflected while passing through the first amplification medium and returns to the direction of the first amplification medium;
A first beam splitter disposed to face the first mirror with the first amplification medium therebetween, and adjusting a path of a second amplified pulse by returning to and passing through the first amplification medium;
A first wave plate disposed between the first mirror and the first beam splitter to change the polarization or phase of a passing pulse;
A second mirror for transmitting a pulse whose path is adjusted by the first beam splitter toward a second amplification medium;
The second amplification medium disposed to be spaced apart from the first amplification medium and configured to third amplify the pulses supplied from the second mirror;
A first pumping lamp disposed to be spaced apart from the first amplification medium and the second amplification medium, and illuminating light to the first amplification medium and the second amplification medium;
A third mirror disposed to reflect a third amplified pulse while passing through the second amplification medium and return to the direction of the second amplification medium;
A second beam splitter disposed to face the third mirror with the second amplification medium therebetween, and adjusting a path of a fourth amplified pulse by returning to and passing through the second amplification medium;
A third wave plate disposed between the third mirror and the second beam splitter to change the polarization or phase of the passing pulse; And
The pulse reflected from the second mirror is supplied to the second amplification medium through the second beam splitter, and is disposed between the second mirror and the second beam splitter to be reflected from the second mirror and the second beam It includes a second wave plate to change the polarization or phase of the pulse directed to the splitter,
The pulse supplied from the laser generating unit passes through the first beam splitter and is directed toward the first amplification medium,
Laser device for skin treatment. A diode laser generator for generating a diode laser pulse;
A laser amplifying unit amplifying the diode laser pulse transmitted from the diode laser generating unit; And
And a control unit controlling the diode laser generating unit and the laser amplifying unit to control a duration of a pulse output from the laser amplifying unit,
The diode laser generator,
One or a plurality of diode lasers generating the diode laser pulses; And
It includes one or a plurality of diode laser drivers arranged to correspond to the diode lasers, respectively, and variably generating diode laser pulses generated by the diode laser into pulses having different durations,
The laser amplification unit,
A first amplification medium for first amplifying the pulses supplied from the laser generator;
A first mirror for adjusting a path of a first amplified pulse while passing through the first amplification medium;
A second mirror for transmitting a pulse whose path is adjusted in the first mirror toward a second amplification medium;
The second amplification medium disposed to be spaced apart from the first amplification medium, and second amplifying the pulse supplied from the second mirror;
A first pumping lamp disposed to be spaced apart from the first amplification medium and the second amplification medium, and illuminating light to the first amplification medium and the second amplification medium;
A second beam splitter passing a second amplified pulse through the second amplifying medium;
A third is disposed to face the second amplification medium with the second beam splitter interposed therebetween, and adjusts a path by reflecting the second amplified pulse passing through the second amplifying medium and passing through the second beam splitter. mirror;
A first wave plate disposed between the third mirror and the second beam splitter to change the polarization or phase of a pulse passing through the second beam splitter and directed to the third mirror;
A first beam splitter arranged to face the first mirror with the first amplification medium therebetween, and configured to adjust a path by reflecting a pulse whose path is adjusted from the third mirror;
The pulse whose path is adjusted in the first beam splitter passes through a first amplification medium and is amplified by a third, and the third amplified pulse is directed toward the second mirror by adjusting a path in the first mirror. 2 The pulse whose path is adjusted in the mirror is directed toward the second amplification medium, and the fourth amplified pulse passing through the second amplification medium is transmitted after the path is adjusted by the second beam splitter,
The pulse supplied from the laser generating unit passes through the first beam splitter and is directed toward the first amplification medium,
Laser device for skin treatment. The method according to any one of claims 1 to 3,
The one or more diode lasers,
Is a plurality of diode lasers,
The plurality of diode lasers generate diode laser pulses of different wavelengths,
Laser device for skin treatment. The method according to any one of claims 1 to 3,
The one or more diode lasers,
Including a first diode laser and a second diode laser,
The one or more diode laser drivers,
A first diode laser driver for varying a duration of a diode laser pulse generated from the first diode laser from a first duration to a second duration; And
A second diode laser driver for varying a duration of a diode laser pulse generated from the second diode laser from a third duration to a fourth duration,
The third duration and the fourth duration are greater than the first duration and the second duration,
Laser device for skin treatment. The method according to claim 1,
Further comprising a lens unit disposed between the third mirror and the fourth mirror and configured to adjust the magnitude of the pulse of the pulse reflected from the third mirror,
Laser device for skin treatment. The method according to claim 2,
Further comprising a lens unit disposed between the second beam splitter and the second wave plate, and adjusting a magnitude of a pulse whose polarization or phase is changed in the second wave plate,
Laser device for skin treatment. delete The method of claim 3,
Further comprising a lens unit disposed between the second mirror and the second beam splitter and configured to adjust the size of a pulse whose path is adjusted in the second mirror,
Laser device for skin treatment.

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