KR102245653B1 - Batch type processing apparatus and method for recycling SiC product using the same - Google Patents

Abstract

The present invention relates to a batch-type processing apparatus and an SiC product recycling method using the same and, more specifically, to a batch-type processing apparatus to process a plurality of objects to be processed by using a spray nozzle having different shapes of an inlet and a spray port, and an SiC product recycling method using the same. According to one embodiment of the present invention, the batch-type processing apparatus comprises: a multistage support capable of loading a plurality of objects to be processed in a plurality of stages; a chamber providing a processing space for the object to be processed loaded on the multistage support; a heating unit providing thermal energy to the processing space of the chamber; a gas line provided along the periphery of the chamber and through which a process gas is supplied; and a spray nozzle extending from the gas line into the chamber and injecting the process gas into the chamber. The spray nozzle includes an inlet communicating with the gas line to receive the process gas and a spray port having a different shape from that of the inlet and communicating with the inlet to spray the process gas.

Description

Batch type processing apparatus and method for recycling silicon carbide products using the same TECHNICAL FIELD [Batch type processing apparatus and method for recycling SiC product using the same}

The present invention relates to a batch type processing apparatus and a method for regenerating a silicon carbide product using the same, and more particularly, a batch type processing apparatus for processing a plurality of objects to be processed using a spray nozzle having different inlet and injection ports, and the same. It relates to a method of recycling used silicon carbide products.

In the field of semiconductor manufacturing, generally, batch-type processing methods are used in which a plurality of targets are loaded and a plurality of targets are processed at once.

Ring-shaped structures (eg, focus rings) used in plasma processing equipment are always exposed to plasma and sputtered by positive ions in the plasma so that their surfaces are etched, and ring-shaped structures at appropriate cycles If the replacement of the ring-shaped structure is not performed, the amount of etching by-products due to the etching of the ring-shaped structure increases, resulting in a problem that it is difficult to smoothly proceed the etching process. Such a ring-shaped structure must be replaced at regular intervals, and conventionally, the entire amount of the replaced ring-shaped structure is disposed of as it is.

Accordingly, attempts have been made to process and reuse the ring-shaped structures that are disposed of in this way, and a batch-type processing method in which the ring-shaped structures are stacked in multiple stages and processed at once is also being attempted.

In such a batch type treatment method, uniformity of treatment (or coating) for a plurality of targets is also important, and a method of spraying a process gas capable of performing uniform treatment on a plurality of targets is required.

Korean Patent Application Publication No. 10-2014-0067790

The present invention provides a batch-type processing apparatus for uniformly treating a plurality of objects to be processed using injection nozzles having different inlet and injection ports, and a method for regenerating a silicon carbide product using the same.

A batch-type processing apparatus according to an embodiment of the present invention includes a multi-stage support capable of loading a plurality of objects to be processed in a multi-stage; A chamber for providing a processing space for the object to be processed loaded on the multi-stage support; A heating unit providing thermal energy to the processing space of the chamber; A gas line provided along the circumference of the chamber to supply a process gas; And an injection nozzle extending from the gas line to the inside of the chamber, and injecting the process gas into the chamber, wherein the injection nozzle is in communication with the gas line, and an inlet through which the process gas is introduced. ; And a jet port having a different shape from the inlet port and communicating with the inlet port to inject the process gas.

The cross-sectional area of the injection port may be smaller than the cross-sectional area of the inlet.

The width in the first direction of the injection hole may be smaller than the width in the second direction crossing the first direction.

The first direction may be a direction parallel to the loading direction of the object, and the second direction may be a direction parallel to the gas line to which each of the injection nozzles is connected.

The injection nozzles may further include a pair of guards each protruding from one end of the injection hole and spaced apart from the injection hole and provided in parallel with each other in the extending direction of the injection nozzle.

The pair of guards may be parallel in the second direction.

The object to be processed has a ring shape, and the multi-stage support includes: a pillar portion extending in a loading direction of the object to be processed; And a plurality of branch portions connected to the pillar portion and extending in an outward direction and formed in a radial shape, and the plurality of branch portions may be provided in multiple stages along the extending direction of the pillar portion.

The spray nozzles are configured in a plurality and are arranged in multiple stages, and each of the spray nozzles having the same height may be disposed to be spaced apart from each other at the same angle along the circumference of the chamber.

The chamber is made of a metal material, the object to be treated is made of silicon carbide (SiC), provided on the inner surface of the chamber, and a refractory wall made of a material including graphite; may further include.

It may further include a protective sheet provided on the inner surface of the refractory wall and made of a material containing graphite.

The multi-stage support may be made of a material including graphite.

The object to be processed may be a focus ring provided at an edge of a wafer in a plasma processing apparatus.

In the method for regenerating a silicon carbide product according to another embodiment of the present invention, in the method for regenerating a silicon carbide product using a batch-type treatment apparatus according to an embodiment of the present invention, a silicon carbide product having a damaged surface is loaded on the multi-stage support. Providing in the chamber; High-temperature heat treatment of the damaged silicon carbide product in a reducing atmosphere; And depositing a silicon carbide layer at least partially on the high-temperature heat-treated silicon carbide product by using a chemical vapor deposition method.

The process of performing the high-temperature heat treatment and the process of depositing the silicon carbide layer may be continuously performed in-situ.

In the batch type processing apparatus according to the embodiment of the present invention, the shape of the inlet and the injection port are different in the injection nozzle for injecting the process gas into the chamber, so that the process gas can be smoothly introduced into the injection nozzle through the inlet, and through the injection port. Process gas can be evenly distributed and sprayed. That is, the inlet has a wide cross-sectional area, so that the inflow of the process gas can be facilitated, and by making the cross-sectional area of the injection port smaller than that of the inlet, the process gas can be accelerated while passing through the injection nozzle to generate an injection force. The spray can be uniformly spread over the entire area of the spray hole rather than being biased to the central area of the sprayer.

Here, by making the width in the first direction of the jet hole smaller than the width in the second direction crossing the first direction, the jet can be sprayed from a small width to widen the jet angle in the first direction, and due to the wide width, the jet angle can be widened in the second direction. The spray width can be widened, and accordingly, the spray angle in the loading direction of the object and/or the spray width in the width direction of the object (or the direction perpendicular to the extension direction of the spray nozzle) are adjusted to It is possible to improve the processing uniformity between water and/or the processing uniformity for each area of each target object.

In addition, by including a pair of guards protruding from the injection port at one end of the injection nozzle, the injection angle in the first direction can be prevented from becoming too wide, and toward each object (or the center of the chamber). Direction), the injection direction of the process gas can be collected, and the flow of the process gas can be guided to each object to be treated.

And by providing a refractory wall made of a material containing graphite on the inner surface of the chamber, it is possible to maintain the temperature of the processing space (that is, inside the chamber), and the object to be treated is made of silicon carbide (SiC) and coated with silicon carbide. In this case, since the refractory wall is made of a graphite material, it may not affect the treatment process, and separation of foreign substances such as deposition by-products including carbon from the refractory wall may be suppressed or prevented.

In addition, if a protective sheet made of graphite-containing material is attached (or coated) on the inner surface of the refractory wall, damage and contamination of the refractory wall can be prevented, and foreign matter separation can be suppressed or prevented, as well as replacement. It can be easy.

On the other hand, in the method for regenerating a silicon carbide product according to an embodiment of the present invention, a silicon carbide layer can be uniformly deposited on a plurality of targets by using a batch-type processing apparatus including spray nozzles having different inlet and injection ports. In addition, due to the batch-type treatment device including a refractory wall made of a material containing graphite and/or a protective sheet made of a material containing graphite, the process of high-temperature heat treatment and carbonization of the silicon carbide product without affecting the treatment process. The process of depositing a silicon carbide layer on a silicon product can be performed in-situ.

1 is a cross-sectional view showing a batch type processing apparatus according to an embodiment of the present invention.
Figure 2 is a diagram showing a spray nozzle according to an embodiment of the present invention.
3 is a diagram for explaining the relationship between the shape of the spray nozzle and the spray pattern according to an embodiment of the present invention.
Figure 4 is a diagram showing a multi-stage support according to an embodiment of the present invention.
5 is a flow chart showing a method of regenerating a silicon carbide product according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only the present embodiments make the disclosure of the present invention complete, and the scope of the invention to those of ordinary skill in the art It is provided to inform you. In the description, the same reference numerals are assigned to the same components, and the drawings may be partially exaggerated in size in order to accurately describe the embodiments of the present invention, and the same numerals refer to the same elements in the drawings.

1 is a cross-sectional view showing a batch type processing apparatus according to an embodiment of the present invention, FIG. 1(a) is a front cross-sectional view of a batch type processing apparatus, and FIG. 1(b) is a schematic plan cross-sectional view of a batch type processing apparatus. .

Referring to FIG. 1, a batch-type processing apparatus 100 according to an embodiment of the present invention includes a multi-stage support 110 capable of loading a plurality of objects 10 in a multi-stage manner; A chamber 120 providing a processing space for the object 10 loaded on the multi-stage support 110; A heating unit 190 for providing thermal energy to the processing space of the chamber 120; A gas line 130 provided along the circumference of the chamber 120 to supply a process gas; And an injection nozzle 140 extending from the gas line 130 to the inside of the chamber 120 and injecting the process gas into the chamber 120.

The multi-stage support 110 may load a plurality of targets 10 in multiple stages, and a plurality of targets 10 may be stacked in multiple stages and provided in a processing space of the chamber 120. In addition, a plurality of to-be-processed objects 10 that are stacked on the multi-stage support 110 and provided in the processing space of the chamber 120 may be subjected to a batch type processing process.

The chamber 120 may provide a space for processing the object 10 loaded on the multi-stage support 110, and a receiving space in which the multi-stage support 110 can be accommodated may be formed. In the receiving space, a multi-stage support 110 in which the object 10 is loaded may be accommodated to provide a processing space in which a processing process of the object 10 is performed. For example, the chamber 120 may be formed in a cylindrical shape, and a space independent from the outside may be created so that process gas, thermal energy, and the like do not escape. In this case, the treatment process of the object 10 may be performed at atmospheric pressure (AP), and may be a process of recycling the object 10 with a damaged surface. Here, the atmospheric pressure (AP) does not mean only the same as the atmosphere (pressure), it may be slightly lower than the atmospheric pressure (pressure), and is sufficient if it is not a high vacuum (vacuum).

The heating unit 190 may provide thermal energy to the processing space of the chamber 120, and is provided along the sidewall of the chamber 120 so that the processing of the object 10 takes place (that is, the processing space). Heat may be supplied to the chamber 120 to increase the temperature. In addition, it is possible to control the temperature in the processing space of the chamber 120 in which the heat treatment process is required by providing heat required when regenerating the object 10 with a damaged surface during the treatment process through the heat treatment process.

The gas line 130 may be provided along the circumference of the chamber 120 and a process gas may be supplied. For example, the gas line 130 may communicate (or be connected) with a gas supply line 151 connected to a gas supply source (not shown), and the gas supply line 151 may be connected to the gas supply line 151 from a gas supply source (not shown). Process gas may be supplied, and the process gas may be delivered (or supplied) to the injection nozzle 140.

Here, the gas line 130 is provided along the circumference of the chamber 120, so that a plurality of injection nozzles 140 may be provided at the same height, and accordingly, the gas line 130 may be provided in a plurality of directions toward the object 10. Process gas can be injected (or supplied).

In this case, the process gas may be a gas required for a high-temperature heat treatment process and a deposition process among the processing processes of the object 10. For example, in the high-temperature heat treatment process, it may be a reducing gas (eg, hydrogen gas), and in the deposition process, it may be a deposition gas such as a silicon carbide raw material for depositing silicon carbide (layer).

The injection nozzle 140 may extend from the gas line 130 to the inside of the chamber 120 and may be provided, and may inject the process gas into the chamber 120. At this time, the gas line 130 may be provided inside the chamber 120 so that the injection nozzle 140 may be provided inside (or inside) the chamber 120, and the gas line 130 The injection port 142 of the injection nozzle 140 may be provided in the chamber 120 by being provided outside and at least a part of the injection nozzle 140 passing through the sidewall of the chamber 120. Accordingly, the process gas may be supplied into the chamber 120 through the injection nozzle 140, and the process gas may be injected toward the object 10.

Meanwhile, the batch-type processing apparatus 100 of the present invention may further include an exhaust unit (not shown) for discharging residual (or residual) gas in the chamber 120 to the outside.

The exhaust unit (not shown) can discharge gas (eg, residual gas, residual gas, excess gas, etc.) in the chamber 120 to the outside, and process residues generated in the processing process (eg, residual gas). Gas, excess gas, etc.) may be discharged to the outside of the chamber 120, or gas (or gas) in the chamber 120 may be discharged to the outside to make the interior (space) of the chamber 120 into a vacuum. For example, the exhaust unit (not shown) may include a vacuum pump that discharges (or exhausts) internal air to the outside to form a vacuum inside the chamber 120.

Figure 2 is a diagram showing a spray nozzle according to an embodiment of the present invention, Figure 2 (a) is a perspective view of the spray nozzle, Figure 2 (b) is a side cross-sectional view of the spray nozzle, Figure 2 (c) is a spray It is a rear view of the nozzle.

2, the injection nozzle 140 is in communication with the gas line 130, the inlet 141 through which the process gas is introduced; And an injection port 142 having a different shape from the inlet port 141 and communicating with the inlet port 141 to inject the process gas. The inlet 141 may be formed at one end of the injection nozzle 140 connected to (or in contact with) the gas line 130, and communicated with the gas line 130 to allow the process gas to be introduced, and the introduced The process gas may flow through the injection nozzle 140.

The injection port 142 may have a different shape from the inlet port 141, and may inject the process gas transmitted through the injection nozzle 140 through communication with the inlet port 141. The injection nozzle 140 may be a linear (or line shape) extending in one direction, and an inlet 141 may be formed at one end (part) connected to the gas line 130, and the end (part ) And the injection hole 142 may be formed at the other end (part) opposite to (or opposite to the one end (part)) to face the inlet 141. In addition, the injection nozzle 140 may have an internal flow path 145 formed between the inlet 141 and the injection hole 142, and the process gas introduced into the internal flow path 145 through the inlet 141 is the internal flow path. It may be discharged (or sprayed) through (or flow) through (145) through the injection port (142).

For example, the inlet 141 may have the same width in a first direction such as a circle, a square, and a width in a second direction crossing the first direction, and the injection port 142 may be an oval, a rectangle, or a race track. ) It may be a long shape in any one of the first direction or the second direction, such as a shape. That is, the width of the injection hole 142 in the first direction and the width in the second direction may be different from each other.

When the inlet port 141 has the same shape as the width in the first direction and the width in the second direction, the process gas supplied through the gas line 130 is uniformly (or uniformly distributed) throughout the cross-sectional area through the inlet port 141. Distributed) can flow in well. At this time, the inlet 141 may be preferably a circular shape, and in the case of a polygonal shape such as a square, a portion having a different radius (or half width) at the center of the inlet 141 may occur, resulting in a vortex. The supply of process gas may not be smooth. And when the injection hole 142 has a shape different from the width in the first direction and the width in the second direction, the injection angle of the process gas injected from the injection hole 142 is the width of the first direction and the second direction. The width of the process gas may be widened in a small direction, and the width of the process gas may be widened in a direction having a larger width of the first direction and the second direction.

Here, the cross-sectional area of the injection port 142 may be smaller than the cross-sectional area of the inlet 141. Due to the wide cross-sectional area of the inlet 141, the process gas can be easily introduced into the injection nozzle 140 through the inlet 141 (that is, the internal flow path). And when the cross-sectional area of the injection port 142 is smaller than the cross-sectional area of the inlet 141, the process gas can be accelerated while passing through the inner flow path 145 quickly due to the difference in atmospheric pressure between the inlet 141 and the injection port 142, By this acceleration (force), an injection force capable of spreading and spraying the process gas may be generated (or provided). At this time, since the process gas moves from a high atmospheric pressure to a low air pressure, the internal air of the chamber 120 through an exhaust unit (not shown) so that the process gas can be well injected (or supplied) into the chamber 120. (Or gas) may be exhausted to the outside to lower the internal pressure of the chamber 120 (than atmospheric pressure). Accordingly, the process gas can be uniformly spread and sprayed over the entire area of the injection port 142, and the inlet 141 and the injection port 142 have the same cross-sectional area, so that the process gas is concentrated in the central area of the injection port 142. It can suppress or prevent spraying.

FIG. 3 is a diagram for explaining the relationship between the shape of the injection hole and the injection pattern according to an embodiment of the present invention. FIG. 3(a) is a spray pattern at the injection hole having the same width in the first direction and the width in the second direction. And FIG. 3(b) shows a spray pattern at an injection port in which the width in the first direction is smaller than the width in the second direction.

2 and 3, a width in a first direction of the injection hole 142 may be smaller than a width in a second direction crossing the first direction. That is, the injection hole 142 may have a long width (or long axis) having a long width and a short width (or short axis) having a short width. In this case, the width in the first direction of the injection port 142 may be smaller (or narrower) than the width in the first direction of the inlet 141, and the width in the second direction of the injection port 142 is It can be larger (or wider) than the two-way width.

When the width in the first direction of the injection hole 142 is smaller than the width in the second direction, the process gas exits the small width injection hole 142 in the first direction and the space becomes wider in the first direction. It can be spread and sprayed while spreading from a small width, so that the spraying angle can be widened in the first direction. This is the same principle as that when the injection hole 142 is in a dot shape, the process gas exits the injection hole 142 and spreads in all directions from one point due to an open space (or a large space), and the first direction Since it has a small width only in the first direction, it can be spread at various angles (or multiple angles) only in the first direction, and only the spray angle in the first direction can be widened.

In addition, since it has a wide width in the second direction, the spray width may increase in the second direction due to the wide width in the second direction. That is, due to the wide width in the second direction, the location where the process gas is discharged (or discharged) is only wide spread, and the injection direction (or angle) of the process gas at each location may not have a large deviation, The process gas may spread widely in the second direction and be injected substantially in parallel. In this case, the injection direction(s) of the process gas injected from each position in the second direction may be substantially parallel to the extension direction of the injection nozzle 140, and the injection density of the process gas in the second direction is It may be substantially uniform, the density of the process gas may be uniform in the second direction, and processing uniformity for each region in the second direction may be improved.

On the other hand, when the width (or spray width) is small in the second direction and the spray angle (variation of) increases, the spray width varies for each spray angle in the first direction, and the processing uniformity in the first direction May deteriorate. However, as in the present invention, when the width is wide in the second direction, the uniformity of processing may be improved in the first direction as well.

The first direction may be a direction parallel to the loading direction of the object 10, and the second direction may be a direction parallel to the gas line 130 to which each injection nozzle 140 is connected. Here, a direction parallel to the gas line 130 to which each injection nozzle 140 is connected may be a direction parallel to a tangent line (direction) of the gas line 130 to which each injection nozzle 140 is connected. The width of the direction parallel to the loading direction of the object 10 (or the thickness direction of the object) is parallel to the gas line 130 to which the respective injection nozzles 140 are connected (or of the injection nozzles). If it is smaller than the width of the object to be processed in the width direction) crossing the extension direction, the spray angle is widened in the loading direction of the object 10, so that one spray nozzle 140 is used for a plurality of objects to be processed. The process gas can be injected (or supplied) to (10), and in the loading direction of the object to be treated 10 according to the width of the first direction (that is, a direction parallel to the loading direction of the object to be treated). The injection angle of can be adjusted, and a uniform amount of the process gas is injected at each injection angle, so that the processing uniformity between the plurality of objects 10 to be treated can be improved. In addition, since the width in a direction parallel to the gas line 130 to which each of the spray nozzles 140 is connected is wide, the spray width is in the width direction of the object 10 (or a direction perpendicular to the extension direction of the spray nozzle). May be widened, and a uniform amount of the process gas may be injected at each position of the injection width (or in the width direction of the object), and accordingly, the injection nozzle 140 from the object 10 ), the density of the process gas may be uniform in the width direction perpendicular to the extension direction of ), and the processing uniformity of each area of each target object 10 may be improved.

The injection nozzles 140 are formed protruding at one end of the injection hole 142, respectively, and are spaced apart from each other around the injection hole 142, and a pair of guards 143 provided side by side in the extending direction of the injection nozzle 140 It may further include. A pair of guards 143 may be formed at one end (or the other end) where the injection hole 142 is formed, protruding from the injection hole 142, respectively, and are spaced apart from each other around the injection hole 142 to extend the injection nozzle 140 It can be provided side by side with each other in the direction. In this case, the pair of guards 143 may be spaced apart from each other in the first direction. A pair of guards 143 may limit the injection angle in the first direction, and reduce the first direction component (for example, force or acceleration) of the injected process gas to reduce the injection direction of the process gas. The spray nozzle 140 may be collected in the extending direction (or in the center direction of the chamber), and the flow of the process gas may be guided to each target object 10. That is, the pair of guards 143 can prevent the injection angle in the first direction from becoming too wide, and can collect the injection direction of the process gas toward each object 10, The flow of the process gas may be guided to each object 10 to be processed.

In addition, the pair of guards 143 may be parallel to each other in the second direction. The pair of guards 143 may be spaced apart from each other in the first direction and provided parallel to each other in the second direction, and the spray angle in the first direction at each position in the second direction may be uniform. have. In this case, the process gas may be supplied only to a predetermined number of targets 10 from one spray nozzle 140, and each target 10 has a uniform amount (or density) in the second direction. By spraying (or supplying) the process gas, not only the processing uniformity between the plurality of processing targets 10 but also the processing uniformity of each area of the processing target 10 may be improved.

Figure 4 is a diagram showing a multi-stage support according to an embodiment of the present invention, Figure 4 (a) is an exploded perspective view of the multi-stage support, Figure 4 (b) is a front view of the coupling of the multi-stage support.

Referring to FIG. 4, the object to be processed 10 may have a ring shape, and may be a ring-shaped structure used in a semiconductor manufacturing apparatus. Here, the ring shape may include not only a circular ring but also a polygonal ring shape such as a square ring. When the object 10 is a ring-shaped structure, the width of the injection port 142 in a direction parallel to the loading direction of the object 10 is connected to each of the spray nozzles 140 of the injection port 142. It may be important to be smaller than the width in the direction parallel to the gas line 130.

In the ring-shaped object 10, the process gas is supplied not only to the upper surface, the lower surface, and the outer surface, but also to the inner surface by the hollow portion to be processed, so that the spray angle is adjusted in the loading direction of the object to be processed 10. The process gas can also be sprayed (or supplied) to the inner surface of the object 10 by widening it, and since the ring-shaped object 10 has a wide width and a thin thickness, the object 10 If the injection angle in the loading direction of is small, it is difficult to inject the process gas according to the outer and/or inner surfaces of the object 10, but this problem is increased by increasing the injection angle in the loading direction of the object 10. Can also be solved. In addition, since the spray width can be widened in a direction parallel to the loading direction of the object 10, it is possible to process all the widths of the wide object 10 in the second direction (or It is possible to cover both widths in two directions), and the spray density of the process gas is almost uniform in a direction parallel to the loading direction of the object 10, so that it is uniformly treated on the upper and lower surfaces of the object 10. Can be done.

In addition, in order to process the ring-shaped object 10 in a batch manner, a multi-stage support 110 capable of loading the ring-shaped object 10 in multiple stages is required. Such a ring-shaped object 10 is not easy to firmly support because the support area is not wide, and in order to stably support it, when the support is in contact with a large (or large) area of the object 10, the above The area (area) of the target object 10 that is covered by the support increases, and the surface (part) of the target object 10 that is covered in this way is treated as no treatment such as regeneration or deposition is performed in the treatment process. There is a problem in that the quality (or performance) of the process is deteriorated. In addition, when performing the treatment process by loading the plurality of ring-shaped targets 10 in multiple stages, an appropriate space should be provided between the plurality of ring-shaped targets 10 so that the treatment process can proceed smoothly. .

On the other hand, in the related art, a support (or method) for supporting the ring-shaped object 10 with a small area has been attempted to increase the area of the ring-shaped object 10 that is processed in the treatment process. Since the object 10 in the shape cannot be firmly supported, there is a problem in that the object 10 in the shape of a ring is separated due to rotation, lifting, vibration (or shaking) of the support. In particular, even if a plurality of ring-shaped to-be-processed objects 10 are stacked in multiple stages on a conventional support, the ring-shaped to-be-treated object 10 is placed on the support when moving into the chamber 120 (or the processing space). There was a problem that it was not supported properly and was deviated. Conversely, if the support area (or contact area) of the ring-shaped object 10 is increased in order to firmly support the ring-shaped object 10, the untreated area that cannot be processed increases. There is a problem that the processing quality of (10) is poor.

The multi-stage support 110 includes a column part 111 extending in the loading direction of the object 10; And a plurality of branch portions 112 connected to the pillar portion 111 and extending outwardly, and installed in a radial shape. The rod 111 may be formed to extend in the loading direction of the object 10, and a plurality of coupling grooves 111a may be provided in multiple stages (or at different heights) on the surface. At this time, the pillar portion 111 may have a polygonal or circular cross section, and a plurality of coupling grooves 111a are provided on each side (or at each position (on a line) spaced at a predetermined interval along the circumferential direction of the pillar portion) It can be provided in multiple stages (or in a row).

The plurality of branch portions 112 may be respectively connected to the pillar portion 111 to extend outwardly (or radially of the pillar portion), and may be installed in a radial shape. For example, each of the plurality of branch portions 112 may be formed in a linear (or line-shaped) bar or stick shape extending in one direction, and one end thereof is a coupling groove 111a of the column portion 111 It may be inserted into and coupled, the other end may extend outwardly from the pillar portion 111. Here, the branch portion 112 may be detachable from the pillar portion 111, and may be assembled (or coupled) to the pillar portion 111 so that the plurality of branch portions 112 form a radial shape, and each branch portion The other end of 112 may extend outwardly from the column part 111 to form a radial shape. At this time, after coupling the plurality of branch portions 112 at the same height (or end), the ring-shaped object 10 is placed on the other end of each of the plurality of branch portions 112 having the same height. By providing a ring-shaped object to be processed 10 can be supported.

In addition, the plurality of branch portions 112 may be provided in multiple stages along the extension direction of the pillar portion 111. That is, a plurality (pieces) of (or two or more) branch portions 112 may be installed in a radial shape at each end, and a plurality of (pieces) branch portions 122 forming a radial shape in this way may be provided in a plurality (or It can be installed at several) heights (or steps) respectively. For example, after coupling a plurality of (pieces) branch portions 112 to a plurality of (pieces) coupling grooves 111a of the same height provided at the lower end of the pillar portion 111, respectively, a plurality of (pieces) branch portions ( 112) A ring-shaped object 10 is provided on each other end, and a plurality (pieces) of a plurality (pieces) at a higher position than the plurality (pieces) of the same height, which have already been joined, are combined. After coupling the plurality of (pieces) branch portions 112 to the groove 111a, the process of providing the ring-shaped object 10 on the other end of each of the plurality (pieces) of branch portions 112 is repeated. Accordingly, a desired number (or number of sheets) of the ring-shaped object 10 can be loaded (or charged) on the multi-stage support 110 for each stage. This process may be started from the lower end of the column part 111 and may proceed in a direction in which the height is high. At this time, the ring-shaped object ( 10) can be provided, and a plurality of (pieces) branch portions 110 can be coupled to each end by varying the height of the column portion 111 so that sufficient space is secured between the ring-shaped objects 10 to be processed. have.

Here, a plurality of (pieces) branch portions 112 having the same height (or each end) may be installed to be spaced apart from each other while forming the same angle between the branch portions 112 adjacent to the left and right, and the ring-shaped object 10 ) For stable support, at least three or more branches 112 having the same height may be installed on the pillar portion 121. This is because if two or less of the ring-shaped objects 10 are supported, the ring-shaped objects 10 are not firmly supported.

On the other hand, when assembling by combining a plurality of (pieces) of branch portions 112 for each end of the pillar portion 111 to a plurality of (pieces) of coupling grooves 111a, respectively, a plurality of (pieces) of branch portions ( 112) may be combined in a zigzag shape that is not at the same position (or at the same angle) but in the same position (or at the same angle) with the plurality of branch portions 112 of the stage located at an adjacent height, so that it can be easily detached when detached later, By assembling the branch portions 112 in a plurality of intersecting forms to the column portions 111 in multiple stages, a space is secured between the ring-shaped objects 10 to be processed in a ring shape during the processing process. ), the treatment process may be performed evenly over the entire area. At this time, a plurality of (pieces) branch portions 112 may be combined and assembled to be symmetrical with respect to the center (or reference) of the pillar portion 111 for each stage.

In addition, each of the plurality of branch portions 112 may include a support tip 112a provided on an upper surface of each other end portion. The support tip 112a may have one end (or upper end) in contact with the object 10 in the form of a tip, and may contact and support the object 10. At this time, the support tip 112a may be provided by being inserted into an insertion groove (not shown) such as a circle provided on the upper surface of the other end of the branch part 112, and the other end (or lower end) facing the one end It may be inserted into the insertion groove (not shown) and coupled (or fixed). When supporting the ring-shaped object 10 on the tip-shaped support tip 112a, only the minimum area of the object 10 can be in contact with the multi-stage support 110, and thus processed In the process, the largest area of the ring-shaped object 10 may participate in the reaction occurring in the treatment process. Here, when the support tip 112a is provided with the ring-shaped object 10, the support tip 112a is positioned at a position between the outer diameter and the inner diameter, thereby stably holding the ring-shaped object 10 It can be supported on the support tip (112a).

In addition, each of the plurality of branch portions 112 may further include a stepped portion 112b provided on the upper surface, and a thickness of one end may be thicker than a thickness of the other end. The stepped portion 112b may be formed on the upper surface of each of the plurality of branch portions 112, and the stepped portion 112b is formed in this way so that the thickness of one end side of each of the plurality of branch portions 112 is It may be thicker than the thickness of, and accordingly, the thickness of one end side is thick so that the branch part 112 connected to the column part 111 can be stably coupled to the column part 111 without shaking. In addition, since the thickness of the other end is relatively thin, a space through which the process gas can flow is secured, so that the treatment process can be smoothly performed, and by providing the step portion 112b in this way, a plurality of branch portions ( When 112 is coupled, a plurality of branch portions 112 vertically adjacent to each end can be closely coupled to an optimized height, so that many ring-shaped objects 10 to be processed can be loaded in the same space. This optimized distance is a space for smooth processing without being disturbed by the ring-shaped object 10 adjacent to each stage of the multi-stage support 110 in which a plurality of ring-shaped objects 10 are loaded. It may be a distance enough to provide.

Each of the plurality of branch parts 112 may further include a protrusion 112c having a side wall partially flat at one end, and the protrusion 112c is inserted into the coupling groove 111a of the column part 111 to be coupled. Can be. The protrusion 112c of the form in which one end side of each of the plurality of branch parts 112 partially forms a flat surface may be easily inserted at a time when inserted into the coupling groove 111a of the column part 111, and , By being inserted into the coupling groove 111a, there is no rotation or shaking of the branch part 112 so that the ring-shaped object 10 can be stably supported. Here, the protrusion 112c may have a polygonal shape, preferably a quadrangular shape.

In the conventional batch type support, when loading (or supporting) the ring-shaped object 10, a large area is in contact with the outer part of the ring-shaped object 10, and due to the structure of the batch type support, a ring shape There was a problem in that the process gas was not uniformly diffused in the outer portion of the object to be treated 10 of the, and if a treatment process such as a deposition process is performed in this state, the outer portion of the object to be treated 10 in a ring shape There is a problem in that the treatment (eg, deposition of silicon carbide, etc.) is not performed evenly on the surface and the lower surface of the part. In addition, conventionally, since the support area of the ring-shaped object 10 is narrow, it is difficult to stably support it.

However, unlike the conventional batch-type support, the multi-stage support 110 of the present invention does not have a structure in the outer portion of the ring-shaped object 10, so that the ring-shaped object 10 is processed through a processing process. The process gas is evenly sprayed over the entire area of the machine, so that the treatment process can be performed, and by supporting the ring-shaped object 10 with a minimum area by using the support tip 112a, it is treated to the maximum area (e.g. For example, there is an advantage that deposition of silicon carbide, etc.) can be performed, and a plurality of branch portions 112 are firmly coupled to the column portion 111 to stably support the ring-shaped object 10 without shaking. Can be.

Here, the multi-stage support 110 may be directly or indirectly supported by the support table 183 and provided in the processing space. In the case of including the rotating part 181, the rotating part 181 may be installed on the support table 183, and a base plate 184 is provided on the rotating part 181 to be supported on the base plate 184 and provided multi-stage The support 110 can be rotated together with the base plate 184.

The spray nozzle 140 may be configured in a plurality, and may be arranged in multiple stages (or two or more) in multiple stages. In this case, each of the spray nozzles 140 having the same height may be disposed to be spaced apart from each other at the same angle along the circumference of the chamber 120. That is, the spray nozzles 140 may be provided in stages having different heights, and formed at the same angle and spaced apart from each other, and a plurality of spray nozzles 140 may be provided in a radial direction. 1 (a) and (b), the spray nozzle 140 may be provided with a plurality of spray nozzles 140 for each stage having different heights along the sidewall of the chamber 120, and such a spray nozzle ( 140) may form the same angle and spaced apart from each other. In this way, there may be an advantage of spraying the process gas in a desired direction by using a plurality of spray nozzles 140 for each stage, and within the processing space at a high speed through all the spray nozzles 140 provided for each stage. The process gas may be injected. Through a plurality of injection nozzles 140 provided for each stage, the process gas can be uniformly supplied to the ring-shaped object 10 that is batchwise loaded (or charged), and the multi-stage support 110 is rotated. The multi-stage support 110 may be rotated through the rotating part 181 and the like to more evenly spray the process gas onto the plurality of ring-shaped to-be-processed objects 10.

Meanwhile, the process gas may be injected through the injection nozzles 140 of each stage selected so that the position of the process gas is different when viewed from above among the plurality of injection nozzles 140 located at each stage. For example, the position of one of the plurality of spray nozzles 140 is selected for each stage, and the selected spray nozzle 140 at the upper end of the plurality of spray nozzles 140 at the bottom of the selected spray nozzle 140 is selected. A different location of the spray nozzle 140 can be selected. By repeating this process, the position of each stage can be selected differently, and preferably, a spiral in a clockwise or counterclockwise direction based on the position of one of the plurality of spray nozzles 140 at the top. Spray nozzles 140 of each stage may be selected along the direction. In this way, when the injection nozzles 140 at different positions for each stage are selected, the process gas is injected through the injection nozzles 140 at different positions for each stage to the processing space in the chamber 120. Process gas can be sprayed evenly without agglomeration. In addition, in the case where the batch-type processing apparatus 100 includes a rotating part 181 for rotating the multi-stage support 110, the multi-stage support 110 can be rotated through the rotating part 181. As the multi-stage support 110 rotates along with the position, the process gas can be evenly sprayed onto the ring-shaped object 10.

On the other hand, if a plurality of spray nozzles 140 are provided for each stage, when clogged by any one spray nozzle 140, an unblocked spray nozzle 140 among the plurality of spray nozzles 140 of each stage is used ( Or select) to smoothly proceed with the treatment process, and by selecting the spray nozzle 140 that is not clogged and spraying the process gas, the batch type treatment device 100 can be used for a long time without maintenance, thereby increasing productivity. There are also benefits that can be improved.

In addition, an open portion such as a circle may be formed at the lower end of the chamber 120, and the multi-stage support 110 may be loaded into the interior of the chamber 120 through the open portion of the chamber 120, and the chamber 120 ) May be unloaded to the outside. At this time, loading and unloading of the multi-stage support 110 may be performed by elevating (or moving up and down) the multi-stage support 110 through an elevating unit (not shown). Here, after the multi-stage support 110 is loaded into the chamber 120, the open portion of the chamber 120 through the blocking plate 182 provided under the support table 183 to make the processing space an airtight space. It can be closed, and the inside of the chamber 120 can be sealed to be isolated from the outside.

The chamber 120 may be made of a metal material, and the object to be processed 10 may be made of silicon carbide (SiC). The chamber 120 must have a predetermined strength to isolate and protect the processing space from an external environment, and thus may be made of a metal material.

In addition, the object to be treated 10 may be made of silicon carbide (SiC), and may be a ring-shaped structure used in a semiconductor process. At this time, the target object 10 may be a focus ring provided at the edge of the wafer in the plasma processing apparatus, and the surface of the focus ring may be damaged by a plasma process or the like, and the damaged focus ring (ie, the target object) In order to reuse, a regeneration process of coating the damaged focus ring with silicon carbide (SiC) in the batch-type processing apparatus 100 may be performed.

The batch-type processing apparatus 100 according to the present invention may further include a refractory wall 160 provided on the inner surface of the chamber 120 and made of a material including graphite.

The refractory wall 160 may be provided on the inner surface of the chamber 120 and may be made of a material including graphite. The refractory wall 160 may block heat loss (or leakage) so that the inner (or inner) space or the enclosed (or enclosed) space (or area) can be effectively heated and warmed. The inner space can be quickly heated to a high temperature, and the temperature of the inner space of the refractory wall 160 can be maintained at a high temperature. Here, the refractory wall 160 may be provided inside the chamber 120 so that the compact space in which reactions of the treatment process occur can be quickly and effectively heated and kept warm, and by-products during the treatment process (or Foreign matter) may be prevented from adhering to the inner surface of the chamber 120.

When the refractory wall 160 is disposed outside the chamber 120, the space to be provided with thermal energy is widened, and the heat energy is heated even when the chamber 120 itself is heated as well as the internal space (or gas) of the chamber 120. Is consumed, so that the treatment space may not be effectively heated (or kept warm). In particular, in the case of high-temperature heat treatment at a temperature of 1,300 to 1,600°C or deposition of silicon carbide (layer) at a high temperature of 1,350 to 1,550°C to regenerate the ring-shaped object 10 made of silicon carbide (SiC) It becomes more problematic when heating and insulating the processing space at a high temperature of 1,300°C or higher. However, in the present invention, the refractory wall 160 is disposed inside the chamber 120 to concentrate the concentrated space (ie, the processing space) at a high temperature of 1,300° C. or higher to effectively heat and keep warm.

In general, oxides are used for refractory materials, and are made of porous. When the refractory wall 160 is made of an oxide, an oxide (layer) may be formed on the surface of the object 10 by reacting with the object 10 while reducing oxygen contained in the oxide during the treatment process. However, when the refractory wall 160 is made of a material containing graphite, the temperature of the processing space (that is, inside the chamber) can be maintained (at a high temperature) due to the heat insulation effect through the refractory wall 160. When silicon carbide (SiC) is coated on the processed material 10, the oxygen concentration in the chamber 120 can be adjusted, and the formation of oxides due to reaction with oxygen can be suppressed. In particular, when the object 10 is made of silicon carbide (SiC) and coated with silicon carbide (SiC), when the refractory wall 160 is made of a graphite material, the refractory wall 160 is subjected to a treatment process (i.e., It may not affect the deposition process of silicon carbide). That is, when silicon carbide (SiC) is coated, deposition byproducts including carbon (C) such as silicon carbide (SiC) may be attached to the refractory wall 160, and the refractory wall 160 is made of a graphite material. When it is lost, the refractory wall 160 contains carbon (C) which is the same material as the deposition by-product, so that the separation of foreign materials such as the deposition by-product from the refractory wall 160 can be suppressed or prevented.

The batch-type processing apparatus 100 according to the present invention may further include a protective sheet 170 provided on the inner surface of the chamber 120 or the refractory wall 160 and made of a material including graphite.

The protective sheet 170 may be provided on the inner surface of the chamber 120 or the refractory wall 160, and may be made of a graphite material. The protective sheet 170 may protect the refractory wall 160 and/or the inner wall of the chamber 120, and prevent damage and contamination of the refractory wall 160 and/or the chamber 120, and the sheet It may be easy to attach and detach (or replace) in a (sheet) shape or a film shape. The chamber 120 and the refractory wall 160 are difficult to replace after installation, and because of their large area, cleaning is not easy when foreign substances such as the deposition by-products adhere to the inner wall (or inner surface). However, when the protective sheet 170 is provided on the inner surface of the chamber 120 or the refractory wall 160, foreign substances such as the deposition by-products may be attached to the protective sheet 170 (only), and the protective sheet ( When only 170) is replaced and attached, the foreign matter in the processing space can be removed (or cleaned). In addition, when the protective sheet 170 is made of a graphite material, the protective sheet 170 contains carbon (C) which is the same material as the deposition by-product, so that the foreign matter adheres well until the protective sheet 170 is replaced. And the separation of the foreign material can be suppressed or prevented.

And since the refractory wall 160 has pores, when the refractory wall 160 is provided in the chamber 120, gas (or air) in the chamber 120 is sucked and exhausted (or discharged). ) May be difficult, and it may be difficult to form a vacuum in the chamber 120. In the treatment process, vacuum suction is required between different processes or for carrying in/out of the object 10 or for cleaning in the chamber 120, but such vacuum suction may not be possible in a state having pores. Accordingly, it is possible to block (or fill) the pores of the refractory wall 160 through the protective sheet 170, and the innermost surface may be smooth and dense, and accordingly, the vacuum suction can be smoothly performed, Evacuation and/or vacuum formation may be facilitated.

Meanwhile, the heating unit 190 may include a graphite heater 191 disposed inside the refractory wall 160. The graphite heater 191 may be made of a material containing graphite, may be disposed inside the refractory wall 160, and may be provided in the form of a linear (or line) rod (or rod). For example, the graphite heater 191 may be fixed to the upper fixing bar 192 and the lower fixing bar 193, and through the upper fixing bar 192 and the lower fixing bar 193, the chamber 120 and/ Alternatively, it may be fixed and installed on the refractory wall 160. The graphite heater 191 is made of only carbon (C) and may not affect the treatment process, and it suppresses or prevents detachment (or separation) after foreign substances such as the deposition by-products including carbon (C) are attached. can do.

The multi-stage support 110 may be made of a material including graphite. For example, a process of high-temperature heat treatment in a reducing atmosphere in which a plurality (or multiple sheets) of a ring-shaped object 10 with a damaged surface is loaded on the multi-stage support 110 and loaded into the chamber 120 to modify the surface is performed. By being rough, the oxide film and defects formed on the surface disappear, and the flatness can be restored. Thereafter, a process of depositing silicon carbide (SiC) may be performed, and the process gas (ie, the deposition gas) used in the deposition process using a chemical vapor deposition (CVD) may be used in a pressure range of 50 to By supplying (or spraying) into the processing space at 760 Torr, a large amount of silicon carbide (SiC) may be deposited on the ring-shaped object 10 in a faster time. Here, when the process of depositing silicon carbide (SiC) on the ring-shaped object 10 made of silicon carbide (SiC) is performed, materials other than carbon (C) and silicon (Si) may become impurities, The material of the multi-stage support 110 may be limited (or limited) with a material containing only carbon (C) and/or silicon (Si). Accordingly, the multi-stage support 110 may be made of a graphite material (or material) containing only carbon (C).

On the other hand, when the multi-stage support 110 is made of a graphite material, the multi-stage support 110 contains carbon (C) which is the same material as the deposition by-product, so that foreign substances such as the deposition by-product are separated from the multi-stage support 110 It can also be suppressed or prevented from becoming.

5 is a flow chart showing a method of regenerating a silicon carbide product according to another embodiment of the present invention.

A method for regenerating a silicon carbide product according to another embodiment of the present invention will be described in more detail with reference to FIG. 5, and details that overlap with those previously described in relation to the batch-type treatment apparatus according to an embodiment of the present invention are omitted. Do it.

In the method for regenerating a silicon carbide product according to another embodiment of the present invention, in the method for regenerating a silicon carbide product using the batch-type processing apparatus 100 according to an embodiment of the present invention, the silicon carbide product having a damaged surface is The process of loading on the support 110 and providing it in the chamber 120 (S100); High-temperature heat treatment of the damaged silicon carbide product in a reducing atmosphere (S200); And depositing a silicon carbide layer at least partially on the high-temperature heat-treated silicon carbide product by using a chemical vapor deposition method (S300).

First, a silicon carbide product with a damaged surface is loaded on the multi-stage support 110 and provided in the chamber 120 (S100). Silicon carbide products have excellent physical properties such as strength and hardness, and thermal properties such as thermal conductivity and coefficient of thermal expansion, so they are widely applied to manufacturing process equipment that requires chemical resistance, corrosion resistance, and heat resistance in the semiconductor manufacturing process. Here, the damaged silicon carbide product has an oxide film on its surface through an etching process by a plasma processing device during the semiconductor process, or the surface is etched by about 1 to 10 mm, so that the silicon carbide product with poor surface roughness or by-products such as etching, etc. It may be an included silicon carbide product.

Conventionally, when the surface of a silicon carbide product is etched through an etching process or the like, the damaged silicon carbide product cannot be used again, and the entire amount has to be discarded. The silicon carbide product may be high purity silicon carbide with a purity of 99.99% or higher produced by a chemical vapor deposition (CVD) method, and it has to be replaced with a new silicon carbide product after a certain period of use or an expensive material. Thus, conventionally, since the silicon carbide product is a consumable part, it has a problem of increasing cost in terms of productiveness, and there is also a problem that industrial waste is increased.

Next, the damaged silicon carbide product is subjected to high temperature heat treatment in a reducing atmosphere (S200). A reducing gas is injected into the chamber 120 to create a reducing atmosphere, and the temperature in the chamber 120 is heated to a high temperature to remove defects and oxide films on the surface of the damaged silicon carbide product. In a high-temperature environment, the reducing gas _{reacts with an oxide film (eg, SiO 2} ) formed on the surface of a damaged silicon carbide product to reduce and remove the oxide film. In this case, silicon and carbon, etc. present in the reduced silicon oxide film or the damaged silicon carbide product may mutually diffuse in a high-temperature environment. The surface can be rearranged by mutual diffusion of silicon and carbon in the reduced oxide silicon or damaged silicon carbide product, which can be preferentially oriented to the (200) plane of the β-silicon carbide crystal phase, and in the damaged silicon carbide product. The existing α-silicon carbide crystal phase may be changed into a β-silicon carbide crystal phase composed of relatively fine particles. In addition, the roughness of the surface of the silicon carbide product can be reduced and flattened by realignment, and by-products such as etching can be removed in a high-temperature environment, and organic matter is removed from the damaged silicon carbide product while heating at high temperature. Can be.

Here, the process of performing the high-temperature heat treatment (S200) may be performed at a temperature of 1,300 to 1,600°C. The reducing atmosphere may be formed by injecting a heat treatment gas containing _{hydrogen (H 2) into the chamber 120.} Heat may be applied to the chamber 120 so that the temperature in the chamber 120 becomes a high temperature of 1,300 to 1,600°C. The oxide film on the surface of the damaged silicon carbide product (for example, SiO ₂ ) reacts with hydrogen gas, which is a reducing gas, in a high-temperature environment to reduce the oxide film, and the oxide film is present in the reduced silicon or damaged silicon carbide products. As the silicon and carbon are rearranged, the (200) plane of the β-silicon carbide crystal phase can be relatively preferentially oriented compared to the damaged silicon carbide product in which the (200) plane of the β-silicon carbide crystal phase was hardly present. Surface defects caused by etc. can be removed and the roughness of damaged silicon carbide can be improved. Can be converted into an improved β-silicon carbide crystal phase. That is, silicon carbide may have a β-silicon carbide crystal phase that is a stable phase when the heating temperature is 1,300 to 1,600°C, and the α-silicon carbide crystal phase is not stable at a temperature of 1,300 to 1600°C. It can be a phase change in a crystalline phase.

The β-silicon carbide crystal phase (200) with a fast growth rate by rearranging the silicon and carbon in the silicon or damaged silicon carbide product remaining after the oxide film is reduced through a high-temperature heat treatment reaction that proceeds at a temperature of 1,300 to 1,600°C, which is an appropriate temperature range. The faces can be oriented relatively preferentially. In addition, organic matter or defects on the surface of the damaged silicon carbide product may be removed during the process of raising the temperature inside the chamber 120.

On the other hand, if the temperature inside the chamber 120 is less than 1,300 ℃, the organic matter existing on the surface of the damaged silicon carbide product can be removed, but sufficient energy is not supplied, so the reduction reaction of the oxide film reduced at high temperature does not occur well. It is not easy to remove, and because the silicon and carbon present in the reduced oxide film or damaged silicon carbide products do not diffuse well, realignment does not occur, so the flatness of the silicon carbide surface and the α-silicon carbide crystal phase are still on the surface. Can remain on. On the contrary, when the temperature in the chamber 120 exceeds 1,600° C., not only the oxide film but also the silicon carbide layer at a high temperature may be affected by thermal decomposition or thermal shock, which may adversely affect the product.

On the other hand, _{by injecting hydrogen (H 2} ) gas, which is a reducing atmosphere, into the chamber 120, the pressure in the chamber 120 can be formed in a range of 50 to 760 Torr, which is a low vacuum state or an atmospheric pressure state. . By creating a relatively high pressure, a large amount of reducing gas may be present, thereby making it easier to react with the oxide film on the surface of the damaged silicon carbide product. In addition, the high-temperature heat treatment process (S200) may be performed multiple times, and the high-temperature heat treatment process is continuously performed because the pressure of the high-temperature heat treatment process (S200) and the process of depositing the silicon carbide layer (S300) are similar. (S200) and the process of depositing the silicon carbide layer (S300) may be performed.

In addition, in order to make the chamber 120 in a vacuum state of 10 Torr or less, a pumping operation may be performed and heat may be applied to increase the temperature according to desired conditions. In order to create a reducing atmosphere, hydrogen (H ₂ ) gas can be injected step by step, and the pressure in the chamber 120 is made 50 to 760 Torr, and the holding time for each condition is maintained after maintaining the state for a while. As much as the gas in the chamber 120 is discharged to the outside through a pumping operation, impurities mixed with the gas may be removed.

Then, a silicon carbide layer is at least partially deposited on the high-temperature heat-treated silicon carbide product by using a chemical vapor deposition method (S300). Chemical vapor deposition (CVD) is a process of depositing a solid thin film on a surface of a substrate or the like through a chemical reaction of a gas mixture. Chemical vapor deposition (CVD) is an isotropic deposition method from top to bottom. In the silicon carbide product subjected to the high temperature heat treatment, an oxide film or the like may be removed, the roughness of the surface may be improved, and the (200) plane of the β-silicon carbide crystal phase may be relatively preferentially oriented. Here, in general, crystal growth may be performed in the order of the (111) plane, the (220) plane, and the (200) plane. The (111) plane of the β-silicon carbide crystal phase is the first to be deposited during the initial deposition process in the silicon carbide layer deposition process, but the deposition rate is relatively slow and the deposition process does not progress as the deposition process proceeds, whereas the β- The (200) plane of the silicon carbide crystal phase does not produce nucleation well at first, but as time passes, the deposition rate is relatively fast, so it has advantageous properties when depositing a large amount of silicon carbide layer. .

The high-temperature heat-treated silicon carbide product is a heat-treated silicon carbide product in which the damaged silicon carbide product is subjected to the high-temperature heat treatment process (S200). , As a semiconductor or the like is deposited along the direction indicated by the surface of the semiconductor substrate, the silicon carbide layer may first grow along the (200) plane of the first oriented β-silicon carbide crystal phase. Accordingly, unlike in the general case, when the silicon carbide layer is deposited by chemical vapor deposition (CVD), a large amount of the silicon carbide layer can be rapidly first grown along the direction of the (200) plane of the β-silicon carbide crystal phase. In addition, the characteristics of the (200) plane of the β-silicon carbide crystal phase having a high deposition rate are added, so that the silicon carbide layer can be deposited at a faster rate.

The high-temperature heat treatment process (S200) and the process of depositing the silicon carbide layer (S300) may be continuously performed in-situ. In this case, the process of depositing the silicon carbide layer (S300) may be performed at a temperature of 1,350 to 1,550°C at a deposition rate of 30 to 100 μm/h.

The pressure of the high-temperature heat treatment process (S200) is 50 to 760 Torr by injection of hydrogen gas, which is a reducing gas, and the temperature may be about 1,300 to 1,600°C, and the process of depositing the silicon carbide layer (S300) A temperature of 1,350 to 1,550° C. and hydrogen (H ₂ ) are injected so that the pressure may proceed at normal pressure. As described above, conditions of the process of depositing the silicon carbide layer (S300) and conditions of the process of performing high-temperature heat treatment (S200) may be similar. In accordance with the conditions of the process of depositing the silicon carbide layer (S300), a silicon carbide product that has undergone the high-temperature heat treatment process (S200) of the damaged silicon carbide product through these similar conditions is subjected to a slight change in the processing space. After completion, the process of depositing the silicon carbide layer by chemical vapor deposition (CVD) in an in-situ manner (S300) may be performed.

In this case, the process of depositing the silicon carbide layer (S300) at a temperature lower than the temperature of the high-temperature heat treatment process (S200) may be performed. By continuously proceeding a series of processes, a stable and high-quality silicon carbide layer can be deposited on the surface of a silicon carbide product, and the process time required to increase the temperature in the chamber 120 and inject hydrogen gas is shortened, thereby reducing the process time. I can make it.

In the method for regenerating a silicon carbide product according to an embodiment of the present invention, a silicon carbide layer can be uniformly deposited on a plurality of objects to be treated using a batch type treatment apparatus including spray nozzles having different inlet and injection ports, The process of high-temperature heat treatment of silicon carbide products and silicon carbide products without affecting the treatment process due to the batch-type processing device including a refractory wall made of a material containing graphite and/or a protective sheet made of a material containing graphite The process of depositing a silicon carbide layer on the substrate may be performed in-situ.

As described above, in the present invention, the shape of the inlet and the injection port are different in the injection nozzle that injects the process gas into the chamber, so that the process gas can be smoothly introduced into the injection nozzle through the inlet, and the process gas is evenly spread and sprayed through the injection port. I can. That is, the inlet has a wide cross-sectional area, so that the inflow of the process gas can be facilitated, and by making the cross-sectional area of the injection port smaller than that of the inlet, the process gas can be accelerated while passing through the injection nozzle to generate an injection force. The spray can be uniformly spread over the entire area of the spray hole rather than being biased to the central area of the sprayer. Here, by making the width in the first direction of the jet hole smaller than the width in the second direction crossing the first direction, the jet can be sprayed while being widened from a small width, and the jet angle can be widened in the first direction. The spraying width can be widened, and accordingly, the spraying angle in the loading direction of the object and/or the spraying width in the width direction of the object to be treated is adjusted to achieve the uniformity of processing and/or the area of each object to be treated. The uniformity of star processing can be improved. In addition, since the injection nozzle includes a pair of guards protruding from the injection hole at one end of the injection hole, the injection angle in the first direction can be prevented from becoming too wide, and the injection direction of the process gas toward each object to be treated. Can be collected, and the flow of process gas can be guided to each object to be treated. In addition, by providing a refractory wall made of graphite-containing material on the inner surface of the chamber, the temperature of the treatment space can be maintained, and when the object to be treated is made of silicon carbide and coating silicon carbide, the refractory wall is made of graphite material. It may not affect the refractory wall, and it is possible to suppress or prevent the separation of foreign substances such as deposition by-products including carbon from the refractory wall. In addition, if a protective sheet made of a material containing graphite is attached to the inner surface of the refractory wall, damage and contamination of the refractory wall can be prevented, foreign matter separation can be suppressed or prevented, as well as replacement can be facilitated. . On the other hand, in the present invention, a silicon carbide layer can be uniformly deposited on a plurality of objects to be treated by using a batch-type processing apparatus including spray nozzles having different shapes of the inlet and the jet, and a refractory wall made of a material containing graphite. And/or a process of high-temperature heat treatment of a silicon carbide product without affecting the treatment process due to a batch-type treatment device including a protective sheet made of a material containing graphite, and a process of depositing a silicon carbide layer on the silicon carbide product. You can proceed in-situ.

Although preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and common knowledge in the field to which the present invention pertains without departing from the gist of the present invention claimed in the claims. Those who have a will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the technical protection scope of the present invention should be determined by the following claims.

10: object to be treated 100: batch type processing device
110: multi-stage support 111: column
111a: coupling groove 112: a plurality of branches
112a: support tip 112b: step
112c: protrusion 120: chamber
130: gas line 140: injection nozzle
141: inlet 142: injection port
143: a pair of guards 151: gas supply line
160: refractory wall 170: protective sheet
181: rotating part 182: blocking plate
183: support table 184: base plate
190: heating unit 191: graphite heater
192: upper fixing bar 193: lower fixing bar

Claims (14)

A multi-stage support capable of stacking a plurality of ring-shaped objects to be processed in multi-stage;
A chamber for providing a processing space for the object to be processed loaded on the multi-stage support;
A heating unit providing thermal energy to the processing space of the chamber;
A gas line provided along the circumference of the chamber to supply a process gas; And
A spray nozzle extending from the gas line to the inside of the chamber and injecting the process gas into the chamber; and
The spray nozzle,
An inlet through which the process gas is introduced through communication with the gas line; And
It has a shape different from the inlet, and comprises a jet port for injecting the process gas in communication with the inlet,
A batch-type processing apparatus in which a width of the injection port in a first direction parallel to the thickness direction of the object to be processed is smaller than a width in a second direction crossing the first direction in the width direction of the object to be processed crossing the extending direction of the injection nozzle . The method according to claim 1,
The cross-sectional area of the injection port is smaller than the cross-sectional area of the inlet. delete delete The method according to claim 1,
The injection nozzle further comprises a pair of guards each protruding from one end of the injection hole and spaced apart from the injection hole and provided in parallel with each other in the extending direction of the injection nozzle. The method of claim 5,
The pair of guards are batch-type processing apparatuses parallel to the second direction. The method according to claim 1,
The multi-stage support,
A pillar portion extending in the loading direction of the object to be processed; And
It is connected to the pillar portion and extends outwardly, and includes a plurality of branch portions that are installed in a radial shape,
The plurality of branch portions are batch-type processing apparatus provided in multiple stages along the extension direction of the pillar portion. The method of claim 7,
The spray nozzle is composed of a plurality and is arranged in multiple stages,
Each of the spray nozzles having the same height is disposed to be spaced apart from each other at the same angle along the circumference of the chamber. The method according to claim 1,
The chamber is made of a metal material,
The object to be treated is made of silicon carbide (SiC),
A batch-type processing apparatus further comprising a refractory wall provided on the inner surface of the chamber and made of a material containing graphite. The method of claim 9,
A batch-type processing apparatus further comprising a protective sheet provided on the inner surface of the refractory wall and made of a material containing graphite. The method of claim 9,
The multi-stage support is a batch-type processing apparatus made of a material containing graphite. The method according to claim 1,
The batch-type processing apparatus, wherein the object to be processed is a focus ring provided at an edge of a wafer in a plasma processing apparatus. In the regeneration method of a silicon carbide product using the batch type treatment apparatus of any one of claims 1 to 2 and 5 to 12,
Loading a silicon carbide product having a damaged surface on the multi-stage support and providing it in the chamber;
High-temperature heat treatment of the damaged silicon carbide product in a reducing atmosphere; And
A process of depositing a silicon carbide layer at least partially on the high-temperature heat-treated silicon carbide product by using a chemical vapor deposition method. The method of claim 13,
The process of performing the high-temperature heat treatment and the process of depositing the silicon carbide layer are continuously performed in-situ.

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