KR102237572B9 - Euv 리소그래피용 마스크 및 그 제조 방법 - Google Patents
Euv 리소그래피용 마스크 및 그 제조 방법Info
- Publication number
- KR102237572B9 KR102237572B9 KR20190050819A KR20190050819A KR102237572B9 KR 102237572 B9 KR102237572 B9 KR 102237572B9 KR 20190050819 A KR20190050819 A KR 20190050819A KR 20190050819 A KR20190050819 A KR 20190050819A KR 102237572 B9 KR102237572 B9 KR 102237572B9
- Authority
- KR
- South Korea
- Prior art keywords
- euv
- same
- fabricating method
- lithography mask
- euv lithography
- Prior art date
Links
- 238000001900 extreme ultraviolet lithography Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20180050618 | 2018-05-02 | ||
KR1020180050618 | 2018-05-02 |
Publications (3)
Publication Number | Publication Date |
---|---|
KR20190126725A KR20190126725A (ko) | 2019-11-12 |
KR102237572B1 KR102237572B1 (ko) | 2021-04-07 |
KR102237572B9 true KR102237572B9 (ko) | 2021-04-07 |
Family
ID=68577589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190050819A KR102237572B1 (ko) | 2018-05-02 | 2019-04-30 | Euv 리소그래피용 마스크 및 그 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR102237572B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI730139B (zh) | 2016-07-27 | 2021-06-11 | 美商應用材料股份有限公司 | 具多層吸收劑的極紫外遮罩坯料及製造方法 |
TW202131087A (zh) | 2020-01-27 | 2021-08-16 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收劑材料 |
TW202141165A (zh) * | 2020-03-27 | 2021-11-01 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TWI836207B (zh) | 2020-04-17 | 2024-03-21 | 美商應用材料股份有限公司 | 極紫外光遮罩吸收材料 |
TW202202641A (zh) | 2020-07-13 | 2022-01-16 | 美商應用材料股份有限公司 | 極紫外線遮罩吸收劑材料 |
US11609490B2 (en) | 2020-10-06 | 2023-03-21 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
US11592738B2 (en) | 2021-01-28 | 2023-02-28 | Applied Materials, Inc. | Extreme ultraviolet mask absorber materials |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003077151A (ja) * | 2001-09-03 | 2003-03-14 | Sony Corp | 光ピックアップ及び光ディスク装置 |
US9285673B2 (en) * | 2014-07-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Assist feature for a photolithographic process |
JP6855190B2 (ja) * | 2016-08-26 | 2021-04-07 | Hoya株式会社 | 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法 |
-
2019
- 2019-04-30 KR KR1020190050819A patent/KR102237572B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102237572B1 (ko) | 2021-04-07 |
KR20190126725A (ko) | 2019-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
G170 | Publication of correction |