KR102208495B1 - Apparatus for bonding of flip chip - Google Patents

Abstract

The present invention discloses a flip chip bonding apparatus. The present invention includes a first moving part, a second moving part disposed to face the first moving part, a substrate stage disposed on one side of the first moving part and the second moving part, and transferring a substrate, A wafer stage disposed on the other side of the first moving part and the second moving part and installed spaced apart from the substrate stage, a turret head for picking up chips from the wafer stage and flipping the chips, and the A bonding head that moves along the length direction of the first moving part and has a moving path partially overlapping with the moving path of the substrate, and moves along the length direction of the second moving part and attaching the flipped chip on the substrate. And a laser head for bonding the flipped chip to the substrate by irradiating a laser beam onto the flipped chip.

Description

Flip chip bonding device {Apparatus for bonding of flip chip}

The present invention relates to a flip chip bonding device.

In recent years, as electronic products have become smaller and more functional, semiconductor chips, which constitute a core part of electronic products, are also trending toward higher integration and higher performance. In the manufacture of semiconductor packages that protect the highly integrated and high-performance semiconductor chips from various external environments such as dust, moisture, electrical, mechanical load, etc. have.

Accordingly, it is judged that the semiconductor package method is difficult to cope with the trend of becoming light, thin, short and multi-pin with the existing wire bonding method, and new methods to solve this problem are being sought in various ways. The method is the solder bump method.

The solder bump method is to form a separate solder bump on a pad, the input/output terminal of a semiconductor chip, and then turn the semiconductor chip over and attach it directly to the circuit pattern of a carrier substrate or circuit tape. In this way, it is referred to as'flip chip bonding' because the semiconductor chip is bonded in an upside down state.

In the flip chip bonding process, a high-temperature semiconductor chip moves to a reflower, a convection oven, in a face-down state, and the semiconductor chip and the substrate are heated by convective heat to complete the bonding.

However, since the method to which this refloor is applied is composed of a heat dissipation area and a cooling area, it is necessary to implement a temperature profile in which the electrode material can be melted through heating and cooling, so it must have a considerable length. As the size of the equipment increases, the operating cost of the flip chip bonding process increases, and the space utilization is limited. In addition, if the semiconductor chip and the substrate remain in a high temperature environment for a long time, there may be a concern about product quality degradation due to heat-stress.

Korean Patent Registration No. 0179644 (name of the invention: semiconductor chip bonding method) specifically discloses a technology for mounting a flip chip on a substrate by passing a flip chip through an oven.

Korean Patent Registration No. 0179644. (Released on November 27, 1998)

Embodiments of the present invention provide a flip chip bonding apparatus that effectively bonds a flipped chip and a substrate and improves space utilization.

Embodiments of the present invention include a first moving part, a second moving part disposed to face the first moving part, and a substrate stage disposed on one side of the first moving part and the second moving part, and transferring a substrate And, a wafer stage disposed on the other side of the first moving part and the second moving part, and installed spaced apart from the substrate stage, a turret head for picking up chips from the wafer stage and flipping the chips; , A bonding head that moves along the length direction of the first moving part and has a moving path partially overlapping with the moving path of the substrate, and attaching the flipped chip on the substrate, and the length direction of the second moving part. There is provided a flip chip bonding apparatus including a laser head moving along the flipped chip and irradiating a laser beam to the flipped chip to bond the flipped chip to the substrate.

In addition, the laser head includes a laser oscillation unit, a first scan mirror rotating about a first axis such that the angle at which the laser beam emitted from the laser oscillation unit is refracted continuously changes, and the laser beam emitted from the first scan mirror. A second scanning mirror rotating about a second axis in a direction different from the first axis is provided so that the irradiation center position of the laser beam is continuously changed on one surface of the flipped chip by continuously changing the refractive angle. can do.

In addition, the laser beam is emitted in the form of a spot, moves to one surface of the flipped chip in a first direction according to the rotation of the first scan mirror, and different from the first direction according to the rotation of the second scan mirror. It may move to one surface of the flipped chip in the second direction.

In addition, a conversion lens may be further provided between the laser oscillation unit and the first scanning mirror and converting the laser beam so that the energy distribution of the laser beam in a moving direction is uniform.

In addition, a flux unit disposed between the bonding head and the laser head and storing a flux dipping into the flipped chip may be further included.

In addition, the laser beam may heat the entire surface of the flipped chip.

Embodiments of the present invention can improve space utilization by minimizing the size of the flip chip bonding device. In addition, the flip chip bonding device may adjust the position or intensity of the laser beam irradiated onto the chip. In addition, the flip chip bonding device may have uniform energy distribution in the moving direction of the laser beam.

1 is a plan view showing a flip chip bonding apparatus according to an embodiment of the present invention.
2 is a side view showing the bonding head of FIG. 1.
3 is a conceptual diagram illustrating the laser head of FIG. 1.
4 is a configuration diagram showing a method of controlling the laser head of FIG. 3.
5 is a diagram showing movement of a laser beam by driving the laser head of FIG. 3.
6 is a diagram showing movement of a laser beam by driving a laser head according to another embodiment of the present invention.
7 is a flowchart illustrating a process of attaching a flipped chip to a substrate by the bonding head of FIG. 1.
8 is a flowchart illustrating a process of bonding the flipped chip of the laser head of FIG. 1 to a substrate.

Since the present invention can apply various transformations and have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them will be apparent with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding constituent elements are assigned the same reference numerals, and redundant descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are not used in a limiting meaning, but are used for the purpose of distinguishing one component from another component.

In the following examples, the singular expression includes the plural expression unless the context clearly indicates otherwise.

In the following embodiments, terms such as include or have means that the features or elements described in the specification are present, and do not preclude the possibility of adding one or more other features or elements in advance.

In the following embodiments, when a part such as a film, a region, or a component is on or on another part, not only the case directly above the other part, but also another film, region, component, etc. are interposed therebetween. This includes cases where there is.

In the drawings, components may be exaggerated or reduced in size for convenience of description. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, and the present invention is not necessarily limited to what is shown.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

When a certain embodiment can be implemented differently, a specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the described order.

1 is a plan view showing a flip chip bonding apparatus 100 according to an embodiment of the present invention, FIG. 2 is a side view showing the bonding head 30 of FIG. 1, and FIG. 3 is a laser head 40 of FIG. It is a conceptual diagram showing.

1 to 3, the flip chip bonding apparatus 100 includes an elevator 5, a wafer stage 10, a turret head 20, a bonding head 30, a laser head 40, and a substrate stage 50. ), a flux unit 60 and an alignment unit 70 may be included. The flip chip bonding apparatus 100 picks up the chip 120 from a wafer (not shown), attaches the chip 120 to the substrate 110 in a face-down state, and then uses a laser beam to the substrate ( The chip 120 can be bonded to 110).

The elevator 5 may store a wafer (not shown) having a plurality of chips 120. A plurality of good chips 120 are disposed on the wafer. The elevator 5 can store and carry in the wafer. In detail, the wafer may be moved from the elevator 5 to the wafer stage 10 and a loading operation for bonding may be performed. In addition, the wafer from which all the chips 120 are picked up may be moved from the wafer stage 10 to the elevator 5. The wafer may be moved between the elevator 5 and the wafer stage 10 by a transfer means such as a shuttle (not shown).

The wafer stage 10 may load the wafer for pickup of the chip 120.

The turret head 20 may pick up the chip 120 from the wafer stage 10 and then flip the picked up chip 120. The turret head 20 rotates while the chip 120 is fixed to change the chip 120 to a face-down state, so that the conductive bump 125 faces downward.

The turret head 20 may move in the x-axis direction along the supporter 6 installed between the bonding head 30 and the laser head 40. The turret head 20 may move in the x-axis direction to transfer the flipped chip 120 to the bonding head 30.

The bonding head 30 may attach the flipped chip 120 to the substrate 110. In the bonding head 30, a plurality of adsorption passages (not shown) are formed in parallel on a surface in contact with the chip 120, and the chip 120 may be fixed by using an adsorption force by the adsorption passage.

The bonding head 30 may move in the x-axis direction by moving the first moving part 7 in the x-axis direction. The first moving part 7 may move in the longitudinal direction of the supporter part 6 in order to receive the flipped chip 120 from the turret head 20.

The bonding head 30 may move in the longitudinal direction of the first moving part 7. When the bonding head 30 receives the chip 120, in order to transfer the chip 120 to the substrate stage 50, the bonding head 30 is in the y-axis direction, which is the length direction of the first moving part 7. You can move.

The bonding head 30 may move in an x-axis direction and a z-axis direction perpendicular to the y-axis direction. The bonding head 30 may move in the height direction to receive the flipped chip 120 from the turret head 20. In addition, the bonding head 30 may move in the height direction to place the flipped chip 120 on the substrate 110.

The bonding head 30 may rotate around the z-axis direction. The bonding head 30 may rotate the chip 120 to have a predetermined rotation angle. When the chip 120 is twisted, in order to align the chip 120 with the substrate 110, the chip 120 must be rotated by the wrong angle. The bonding head 30 can rotate about the z-axis direction, so that the first alignment mark 117 formed on the substrate 110 and the second alignment mark 127 formed on the chip 120 can be aligned. have. (See Fig. 3)

The bonding head 30 partially overlaps the movement path of the turret head 20 to receive the chip 120. In addition, the bonding head 30 partially overlaps the moving path of the substrate stage 50 in order to attach the chip 120 to the substrate 110.

The laser head 40 is disposed so as to face the bonding head 30, and by irradiating a laser beam onto the flipped chip 120, the flipped chip 120 may be bonded to the substrate 110. The laser head 40 includes a laser oscillation part 41, an optical fiber part 42, a conversion lens 43, a first scan mirror 44, a first actuator 45, a second scan mirror 46, and a second An actuator 47, an Ftheta lens 48, and a housing 49 for accommodating them in an internal space may be provided.

The laser head 40 may move in the x-axis direction by moving the second moving part 8 in the x-axis direction. The laser head 40 may move in the x-axis direction so that even if the substrate stage 50 moves, the bonding process may be continuously performed.

The laser head 40 can move in the longitudinal direction of the second moving part 8. The laser head 40 may be moved in the y-axis direction to continuously perform the bonding process even if the substrate stage 50 is moved.

The laser beam oscillated by the laser oscillation part 41 may move to the conversion lens 43 through the optical fiber part 42. The laser beam L oscillated by the laser oscillation part 41 has a spot shape.

The conversion lens 43 may be installed between the laser oscillation part 41 and the first scan mirror 44. The conversion lens 43 may convert the laser beam so that the energy distribution of the laser beam L in the moving direction is uniform. That is, the conversion lens 43 may make the energy distribution of the laser beam L introduced into the first scan mirror 44 uniform. In addition, the conversion lens 43 can convert the laser beam L into parallel light.

In general, the energy distribution of the laser beam has the highest energy in the center of the spot, and the energy decreases as it goes to the edge. That is, the energy distribution of the laser beam has a Gaussian distribution.

The conversion lens 43 may convert the energy distribution of the laser beam L to be constant. That is, looking at the cross-sectional area in the moving direction of the laser beam L, the energy distribution of the laser beam L may be formed uniformly in the entire cross-sectional area.

The first scan mirror 44 and the second scan mirror 46 are disposed on the optical path between the laser oscillator 41 and the chip 120 to refract the laser beam L onto the flipped chip 120 I can make it. The first scan mirror 44 and the second scan mirror 46 may continuously move the irradiation center of the laser beam L.

The first scan mirror 44 may rotate about the first axis so that the angle at which the laser beam L emitted from the laser oscillation part 41 is refracted is continuously changed. The first scan mirror 44 may rotate based on a first axis in order to move the laser beam L irradiated to the flipped chip 120 in the first direction. The first actuator 45 transmits a driving force to the first scan mirror 44 so that the first scan mirror 44 may rotate about the first axis by driving the first actuator 45.

In the second scan mirror 46, the angle at which the laser beam L emitted from the first scan mirror 44 is refracted is continuously changed so that the irradiation center position of the laser beam L is flipped on one surface of the chip 120. It may rotate based on a second axis in a direction different from the first axis so as to be continuously changed. The second scanning mirror 46 may rotate in a second axis so that the laser beam L irradiated to the flipped chip 120 moves in the second direction. The second direction is different from the first direction, and the first direction and the second direction may be orthogonal.

The F-theta lens 48 may be disposed on the path of the laser beam L reflected by the second scanning mirror 46. The ftheta lens 48 may correct the path of the laser beam L and correct distortion and aberration of the laser beam L.

The substrate stage 50 may load and unload the substrate 110. The substrate stage 50 may move the substrate 110 in one direction. The substrate 110 placed on the substrate stage 50 may be moved in the x-axis direction. A bonding head 30 and a laser head 40 may be positioned on the substrate stage 50. The flipped chip 120 is bonded to the top of the substrate 110 by the laser head 40, and then, the substrate 110 may be discharged from the substrate stage 50.

The substrate stage 50 may include a seating portion 51 on which the substrate 110 is seated, and a guide portion 52 installed at both ends of the seating portion 51. The substrate stage 50 may receive driving force from a driving device (not shown) capable of transmitting the driving force in one direction. For example, the substrate stage 50 may include a linear motor or a conveyor belt.

The flux unit 60 may be disposed between the bonding head 30 and the laser head 40. The flux unit 60 may store a flux to which the flipped chip 120, the bonding head 30, or the laser head 40 is dipped.

The flux unit 60 may be disposed on the path of the bonding head 30 and the flipped chip 120 may be immersed in the flux unit 60. The flux can clean the flipped chip 120. The flux may particularly remove the oxide film formed on the conductive bump 125. In addition, since the bonding head 30 or the laser head 40 may be immersed in the flux unit 60, the bonding head 30 or the laser head 40 may be cleaned.

The alignment unit 70 may align the substrate 110 and the flipped chip 120. The alignment unit 70 may include a first vision unit 71 for checking the alignment of the substrate 110 and a second vision unit 72 for checking the position of the flipped chip 120.

The first vision unit 71 captures the position of the first alignment mark 117 of the substrate 110, and the second vision unit 72 is the second alignment mark 127 of the flipped chip 120 The position of the image is taken. Based on the data captured by the first vision unit 71 and the second vision unit 72, the bonding head 30 moves the flipped chip in the x-axis direction and the y-axis direction, or the z-axis direction. The flipped chip 120 may be aligned on the substrate 110 by rotating the flipped chip. When the first alignment mark 117 and the second alignment mark 127 are aligned, the conductive bump 125 of the flipped chip 120 contacts the electrode 115 of the substrate 110.

The supporter 6, the first moving part 7, the second moving part 8, and the substrate stage 50 may have a rectangular arrangement structure. The supporter part 6, the first moving part 7, the second moving part 8, and the substrate stage 50 correspond to each side of a square, and the flux part 60 and the alignment part 70 in the inner space Can be placed. That is, the turret head 20, the bonding head 30, and the laser head 40 have a compact structure, and the flux unit 60 and the alignment unit 70 are disposed inside the flip chip bonding device 100. Can be minimized.

FIG. 4 is a configuration diagram showing a method of controlling the laser head 40 of FIG. 3, and FIG. 5 is a diagram showing movement of the laser beam L by driving the laser head 40 of FIG. 3.

3 to 5, the laser head 40 is controlled by the controller 80. The controller 80 may include a driving control unit 81, a laser driving unit 82, and a scanning mirror driving unit 83.

The driving control unit 81 may control driving of the scan mirror driving unit 83 and the laser driving unit 82. The scan mirror driver 83 may be electrically connected to the first actuator 45 and the second actuator 47 to drive the first scan mirror 44 and the second scan mirror 46. The laser driving unit 82 may drive the laser oscillation unit 41.

That is, the scanning mirror driving unit 83 drives the first scanning mirror 44 and the second scanning mirror 46 in order to control the movement of the laser beam L irradiated onto the chip 120, and the laser driving unit ( 82) drives the laser oscillation unit 41 with the necessary power for the time required for the laser beam L.

The controller 80 includes the position of the conductive bump 125, the size of the flipped chip 120, and the substrate 110 through the image captured by the first vision unit 71 or the second vision unit 72. The location of the chip 120 can be confirmed. That is, the controller 80 is connected to the first vision unit 71 and the second vision unit 72 to specify the irradiation position and movement direction of the laser beam L.

In detail, the controller 80 can know the size of the flipped chip 120 through the data transmitted through the first vision unit 71 or the second vision unit 72, and the scan mirror driving unit 83 The moving range of the first scan mirror 44 or the second scan mirror 46 may be set according to the size of the chip 120. Thus, the laser beam L can move by the distance S in FIG. 3. The laser beam L can move within the range of L'and L".

Referring to FIG. 5, the laser beam L may be irradiated to a specific area with strong intensity or for a long time. Depending on the position of the flipped chip 120, a portion of the area A must be irradiated with a strong-intensity laser beam L" or a long irradiation time. In addition, another portion of the area A has a weak-intensity laser beam L'. Irradiation or irradiation time should be short.

For example, the intensity of the laser beam L must be strong or the irradiation time must be long for bonding with the electrode 115 immediately above the conductive bump 125. In addition, when a ground pattern (not shown) is formed on the flipped chip 120, heat may escape to the ground pattern, so the intensity of the laser beam L must be strong or the irradiation time must be long in the area of the ground pattern. do.

The scan mirror driver 83 may drive the second actuator 47 to rotate the position of the second scan mirror 46 from the first position 46_1 to the second position 46_2. In addition, the scan mirror driving unit 83 may control the rotation speed of the second scan mirror 46 by driving the second actuator 47 to adjust the irradiation time of the laser beam L.

For example, in a position where the irradiation time should be short, the rotation speed of the second scan mirror 46 is increased so that the laser beam L'may move for a short time in the first position 46_1. In the region A where the irradiation time should be long, the rotational speed of the second scan mirror 46 is slowed so that the laser beam L" can move for a relatively long time at the second position 46_2. Scan mirror driver 83 may control the position of the first scan mirror 44 by driving the first actuator 45 in the same manner as described above.

The laser driver 82 may oscillate a laser beam L having a short wavelength to irradiate a laser beam of strong intensity onto the flipped chip 120. In addition, as shown in FIG. 3, the laser driving unit 82 may adjust the size W of the laser beam L.

The scan mirror driver 83 adjusts the rotation angle of the first scan mirror 44 and the second scan mirror 46, and adjusts the laser beam L according to the position of the flipped chip 120 and the amount of heat required for bonding. ) Position and size can be adjusted.

6 is a diagram showing movement of a laser beam by driving the laser head 40a according to another embodiment of the present invention.

Referring to FIG. 6, the laser head 40a may bond the flipped chip 120 and the substrate 110 by irradiating a laser beam onto the front surface of the flipped chip 120. The laser head 40a irradiates a laser beam to the entire rear surface of the flipped chip 120 to bond the conductive bump and the electrode. The laser beam may have a uniform energy distribution.

That is, if the irradiation center position of the laser beam is made along the entire area of the rear surface of the chip 120 and the irradiation time is the same in all areas, it is evenly heated on the entire rear surface of the chip 120, so that the chip 120 and the substrate ( 110) is uniformly bonded in the area bonded between.

FIG. 7 is a flowchart showing a process of attaching the flipped chip 120 to the substrate 110 by the bonding head 30 of FIG. 1, and FIG. 8 is a flipped chip 120 of the laser head 40 of FIG. 1. ) Is a flowchart illustrating a process of bonding to the substrate 110.

Referring to FIGS. 1, 7 and 8, a process of bonding the flipped chip 120 to the substrate 110 using the flip chip bonding apparatus 100 may be described.

The turret head 20 may pick up the good chips 120 on the wafer stage 10. The turret head 20 may face down the picked up chip 120 so that the conductive bump 125 faces downward.

The bonding head 30 may receive the flipped chip 120 and move the flipped chip to the substrate stage 50. In this case, the bonding head 30 may immerse the flipped chip 120 in the flux unit 60 to remove the oxide layer generated on the conductive bump 125. The flux unit 60 is disposed in the movement path of the flipped chip 120 so that the flux may be immersed before the flipped chip 120 is transferred to the substrate stage 50.

Thereafter, the substrate 110 and the flipped chip 120 may be aligned along the first alignment mark 117 and the second alignment mark 127 by using the alignment unit 70. (See Fig. 2)

The laser head 40 may irradiate a laser beam on the back surface of the flipped chip 120 on the substrate 110 to which the flipped chip 120 is attached. The laser head 40 may move in a first direction or a second direction along the rear surface of the chip 120, and the intensity and irradiation time of the laser beam may be adjusted.

The conductive bump 125 of the flipped chip 120 and the electrode of the substrate 110 are connected by a laser beam L to form a connection part 130 that electrically connects the substrate 110 and the chip 120. . When the chip 120 is attached to the substrate 110, it is discharged from the substrate stage 50.

Meanwhile, the substrate 110 and the chip 120 may be flip-chip bonded using a thermosetting resin (not shown) applied on the substrate 110. In this case, thermal bonding occurs between the terminal portions of the chip 120 and the substrate 110, and if the thermally cured resin is continuously cured in the adhesive surface by heating the chip 120 and the substrate 110, corrosion from the outside In order to prevent the effect, a separate step for sealing the gap between the chip 120 and the substrate 110 is not required, which is more effective.

The flip chip bonding apparatus 100 has a compact structure by forming a square arrangement of the turret head 20, the bonding head 30, and the laser head 40, and the flux portion 60 and the alignment portion ( 70) can be arranged to minimize the size.

The flip chip bonding apparatus 100 may move the position of the laser beam L in at least two different directions to adjust the intensity of the laser beam or the irradiation time according to the position of the flipped chip 120.

The flip chip bonding apparatus 100 may have an even distribution of energy in the moving direction of the laser beam L. In general, the laser beam L has an energy distribution having a Gaussian shape with a high energy distribution at the center. When the laser beam L has a strong energy distribution in a specific area, it is difficult to adjust the intensity of the laser beam L. In addition, when the flipped chip 120 is bonded to the substrate 110, the distribution of the intensity of the laser beam L is different so that the bonding cannot be uniformly performed, and thus product defects and productivity may be degraded.

The flip chip bonding apparatus 100 may uniformly form an energy distribution per unit area of the irradiated laser beam L, thereby improving bonding strength and reliability between the conductive bump 125 and the electrode 115.

Although the present invention has been described in connection with the above-mentioned preferred embodiments, it is possible to make various modifications or variations without departing from the spirit and scope of the invention. Accordingly, the scope of the appended claims will include such modifications or variations as long as they fall within the gist of the present invention.

5: elevator
10: wafer stage
20: turret head
30: bonding head
40: laser head
50: substrate stage
60: flux part
70: alignment unit
80: controller
100: flip chip bonding device
110: substrate
120: chip

Claims (6)

a first moving part that can move in the x-axis direction;
a second moving unit that can move in the x-axis direction and is disposed to face the first moving unit;
A substrate stage disposed on one side of the first moving part and the second moving part and transferring a substrate;
A wafer stage disposed on the other side of the first moving part and the second moving part and spaced apart from the substrate stage;
A turret head for picking up a chip from the wafer stage and flipping the chip;
A bonding head that moves along a y-axis direction that is a longitudinal direction of the first moving unit, has a moving path partially overlapping with the moving path of the substrate, and attaches the flipped chip on the substrate;
A laser head moving along a y-axis direction, which is a longitudinal direction of the second moving part, and irradiating a laser beam onto the flipped chip to bond the flipped chip to the substrate; And
Including a supporter installed between the bonding head and the laser head,
The turret head moves in the x-axis direction along the supporter unit to transfer the flipped chip to the bonding head. The method of claim 1,
The laser head,
Laser oscillation unit;
A first scanning mirror rotating about a first axis such that an angle at which the laser beam emitted from the laser oscillation unit is refracted is continuously changed; And
A second axis in a direction different from the first axis is arranged so that the angle at which the laser beam emitted from the first scanning mirror is refracted is continuously changed so that the irradiation center position of the laser beam is continuously changed on one surface of the flipped chip. A flip-chip bonding apparatus comprising a; a second scan mirror rotating based on a reference. The method of claim 2,
The laser beam,
It is emitted in the form of a spot, moves to one surface of the flipped chip in a first direction according to the rotation of the first scan mirror, and flips the flip in a second direction different from the first direction according to the rotation of the second scan mirror. A flip chip bonding device that moves on one side of the chip. delete delete delete

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