KR102205682B1 - 인-시추 측정을 위한 광학 계측 - Google Patents

인-시추 측정을 위한 광학 계측 Download PDF

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KR102205682B1
KR102205682B1 KR1020157006613A KR20157006613A KR102205682B1 KR 102205682 B1 KR102205682 B1 KR 102205682B1 KR 1020157006613 A KR1020157006613 A KR 1020157006613A KR 20157006613 A KR20157006613 A KR 20157006613A KR 102205682 B1 KR102205682 B1 KR 102205682B1
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data
sequence
parameters
measured data
measured
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KR20150043478A (ko
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이고르 튜로베츠
코넬 보즈도그
다리오 엘리야시
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노바 메주어링 인스트루먼츠 엘티디.
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    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G01N21/8903—Optical details; Scanning details using a multiple detector array
    • H01L22/20—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Textile Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)
KR1020157006613A 2012-08-15 2013-08-15 인-시추 측정을 위한 광학 계측 Active KR102205682B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261683215P 2012-08-15 2012-08-15
US61/683,215 2012-08-15
PCT/IL2013/050697 WO2014027354A1 (en) 2012-08-15 2013-08-15 Optical metrology for in-situ measurements

Publications (2)

Publication Number Publication Date
KR20150043478A KR20150043478A (ko) 2015-04-22
KR102205682B1 true KR102205682B1 (ko) 2021-01-21

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KR1020157006613A Active KR102205682B1 (ko) 2012-08-15 2013-08-15 인-시추 측정을 위한 광학 계측

Country Status (7)

Country Link
US (3) US9528946B2 (https=)
EP (1) EP2890951A4 (https=)
JP (1) JP6336982B2 (https=)
KR (1) KR102205682B1 (https=)
CN (1) CN104583712B (https=)
TW (3) TWI600895B (https=)
WO (1) WO2014027354A1 (https=)

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TWI823344B (zh) * 2015-12-15 2023-11-21 以色列商諾威股份有限公司 用於測量圖案化結構之特性的系統
US9792393B2 (en) * 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) * 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US11107738B2 (en) * 2016-11-16 2021-08-31 Nova Ltd. Layer detection for high aspect ratio etch control
US11519869B2 (en) * 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
US11921433B2 (en) 2018-04-10 2024-03-05 Lam Research Corporation Optical metrology in machine learning to characterize features
WO2019199697A1 (en) 2018-04-10 2019-10-17 Lam Research Corporation Resist and etch modeling
JP7020392B2 (ja) * 2018-12-25 2022-02-16 東芝三菱電機産業システム株式会社 データ収集再生システム
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
JP7220573B2 (ja) 2019-01-24 2023-02-10 株式会社荏原製作所 情報処理システム、情報処理方法、プログラム及び基板処理装置
CN113454767B (zh) * 2019-02-14 2025-03-07 朗姆研究公司 用于支持衬底制造系统的数据分析和机器学习的数据捕获与转换
WO2021140508A1 (en) * 2020-01-06 2021-07-15 Nova Measuring Instruments Ltd. Self-supervised representation learning for interpretation of ocd data
US12038271B2 (en) 2020-01-07 2024-07-16 Nova Ltd Detecting outliers and anomalies for OCD metrology machine learning
US11698628B2 (en) * 2020-03-16 2023-07-11 Vitro Flat Glass Llc System, method, and computer program product for optimizing a manufacturing process
US11919121B2 (en) 2021-03-05 2024-03-05 Applied Materials, Inc. Control of processing parameters during substrate polishing using constrained cost function
US11619594B2 (en) * 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
DE102022129114A1 (de) * 2021-11-05 2023-05-25 Jasco Corporation Spektrometer
JP2023113180A (ja) * 2022-02-03 2023-08-16 東京エレクトロン株式会社 データ算出方法及び基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010003084A1 (en) 1999-12-06 2001-06-07 Moshe Finarov Method and system for endpoint detection
US20080009081A1 (en) 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures

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US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
EP0661279B1 (fr) 1993-12-30 2001-03-07 Guerbet Ligands polyaminés, complexes métalliques, procédé de préparation, applications diagnostiques et thérapeutiques
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
JP2004146782A (ja) * 2002-08-29 2004-05-20 Advanced Lcd Technologies Development Center Co Ltd 結晶化状態のｉｎ−ｓｉｔｕモニタリング方法
US6937337B2 (en) * 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
CN102017191B (zh) * 2008-03-31 2014-05-28 Bt成像股份有限公司 用于晶片成像及处理的方法和设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120008147A1 (en) * 1999-07-09 2012-01-12 Nova Measuring Instruments Ltd. Of Weizmann Scientific Park Method and system for measuring patterned structures
US20010003084A1 (en) 1999-12-06 2001-06-07 Moshe Finarov Method and system for endpoint detection
US20080009081A1 (en) 2006-07-10 2008-01-10 Tokyo Electron Limited Managing and using metrology data for process and equipment control

Also Published As

Publication number Publication date
US20150226680A1 (en) 2015-08-13
TW201831885A (zh) 2018-09-01
KR20150043478A (ko) 2015-04-22
TW201734434A (zh) 2017-10-01
JP2015528569A (ja) 2015-09-28
TWI635269B (zh) 2018-09-11
EP2890951A1 (en) 2015-07-08
US10197506B2 (en) 2019-02-05
EP2890951A4 (en) 2016-05-18
WO2014027354A1 (en) 2014-02-20
TW201415003A (zh) 2014-04-16
JP6336982B2 (ja) 2018-06-06
CN104583712A (zh) 2015-04-29
CN104583712B (zh) 2017-12-01
US20180195975A1 (en) 2018-07-12
US9528946B2 (en) 2016-12-27
US9915624B2 (en) 2018-03-13
TWI600895B (zh) 2017-10-01
US20170167987A1 (en) 2017-06-15

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