KR102202462B1 - Dielectric composition and multilayer ceramic capacitor comprising the same - Google Patents

Abstract

The present disclosure relates to a dielectric composition and a multilayer ceramic capacitor including the same, wherein the dielectric composition according to the present disclosure includes a base material main component and subcomponent, and the base material main component is Ba _m (Ti _(1-y) M _y ) O ₃ ( 0.990<m<1.015, 0.001≤y≤0.010), and the transition metal M is characterized in that it contains at least one of a pentavalent transition metal and a trivalent transition metal.

Description

A dielectric composition and a multilayer ceramic capacitor including the same TECHNICAL FIELD [0002] A dielectric composition and a multilayer ceramic capacitor including the same

The present invention relates to a dielectric composition having high dielectric constant and excellent reliability, and a multilayer ceramic capacitor including the same.

Due to the recent increase in the size of video equipment and the increase in CPU speed of computers, heat generation of electronic equipment is getting serious, so -X5R that can secure stable capacity and reliability at high temperature for stable operation of IC (Integrated Circuit) There is a growing demand from the market for the (operating temperature from -55℃ to 85℃) or X7R (operating temperature from -25℃ to 125℃) class models.

In addition, in order to meet the trend of miniaturization and weight reduction and multifunctionality, which are the general electronic product market trends, miniaturization, high capacity, and boosting of multilayer ceramic capacitor (MLCC) chip products are continuously required. Therefore, excellent dielectric strength and DC characteristics along with thinning of the dielectric layer are considered important in the development of X5R or X7R class models.

Thinning and boosting increase the electric field strength applied to the dielectric layer and deteriorate the DC characteristics and withstand voltage characteristics. In particular, the effect of microstructure defects due to thinning on the breakdown voltage (BDV) and high-temperature IR characteristics is more serious.

In order to prevent this, it is necessary to atomize the main component of the base material, but when the particle size of the main component of the base material decreases, it becomes more difficult to implement the capacitance temperature characteristic and the dielectric constant decreases.

For this reason, the capacitance of the capacitor is not implemented, and even if the dielectric constant is implemented due to the thin layer, the electric field in the capacitor becomes strong, and thus the desired reliability is not satisfied.

In order to solve the above problem, it is necessary to develop a dielectric composition having excellent reliability and dielectric constant without atomization of the main component of the base material.

The following Patent Document 1 relates to a dielectric composition and a ceramic electronic component including the same.

Korean Patent Publication No. 10-2013-0106569

The present invention relates to a dielectric composition having high dielectric constant and excellent reliability, and a multilayer ceramic capacitor including the same.

The dielectric composition according to an embodiment of the present disclosure includes a main component and a sub-component of the base material, and the main component of the base material is Ba _m (Ti _(1-y) M _y ) O ₃ (0.990<m<1.015, 0.001≤y≤0.010) The transition metal (M) may include a pentavalent transition metal or a trivalent transition metal.

A multilayer ceramic capacitor according to an embodiment of the present disclosure includes: a ceramic body including a structure in which dielectric layers and first and second internal electrodes are alternately stacked; And first and second external electrodes formed at both ends of the ceramic body and electrically connected to the first and second internal electrodes, wherein the dielectric layer includes a base material main component and a sub-component, and the base material main component Is represented by Ba _m (Ti _(1-y) M _y ) O ₃ (0.990<m<1.015, 0.001≤y≤0.010), and transition metal (M) contains a pentavalent transition metal or a trivalent transition metal. I can.

The present disclosure provides a dielectric composition having a high dielectric constant and excellent reliability by doping a transition metal in a main component of a base material, and a multilayer ceramic capacitor including the same.

1 is a schematic perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view illustrating a multilayer ceramic capacitor taken along line AA′ of FIG. 1.

Hereinafter, preferred embodiments of the present disclosure will be described with reference to the accompanying drawings.

However, the embodiments of the present disclosure may be modified in various other forms, and the scope of the disclosure is not limited to the embodiments described below. In addition, embodiments of the present disclosure are provided in order to more completely describe the present disclosure to those with average knowledge in the art.

Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and elements indicated by the same reference numerals in the drawings are the same elements.

The present disclosure relates to a dielectric composition, and electronic components including the dielectric composition include a capacitor, an inductor, a piezoelectric element, a varistor, or a thermistor. Hereinafter, a multilayer ceramic capacitor will be described as an example of the dielectric composition and the electronic component.

The dielectric composition according to an embodiment of the present disclosure includes a main component and a sub-component of the base material, and the main component of the base material is Ba _m (Ti _(1-y) M _y ) O ₃ (0.990<m<1.015, 0.001≤y≤0.010) The transition metal (M) includes a pentavalent transition metal or a trivalent transition metal.

The dielectric composition according to the present disclosure may be calcined in a reducing atmosphere at 1180° C. or lower, and may have a dielectric constant of 6000 or more at room temperature.

In addition, the multilayer ceramic capacitor using the dielectric composition according to the present disclosure can operate up to -55°C to 85°C, and secure high dielectric constant and reliability without growing particles of dielectric grains in the dielectric layer.

Hereinafter, each component of the dielectric composition according to an embodiment of the present disclosure will be described in more detail.

Main ingredient of base material

In the dielectric composition according to an embodiment of the present invention, the base material main component is represented by Ba _m (Ti _(1-y) M _y ) O ₃ (0.990<m<1.015, 0.001≤y≤0.010), The transition metal (M) includes a pentavalent transition metal or a trivalent transition metal.

The values of m and y are important factors in the main component of the base material.

M is 0.990 to 1.015.

When the m is less than 0.990, Ba is easily reduced in sintering in a reducing atmosphere, so that the main component of the base material may be changed to semiconductive water.

When m exceeds 1.015, a problem of increasing the firing temperature may occur.

The main component of the base material is doped with the transition metal and is represented by Ba _m (Ti _(1-y) M _y ) O ₃ .

The transition metal (M) may include at least one of a ^pentavalent transition metal (M ⁵⁺ ) and a trivalent transition metal (M ³⁺ ).

The transition metal may include at least one of Mn, Cr, V, Ni, Fe, and Co.

The pentavalent transition metal is dissolved in barium titanate (BT) to generate free electrons, and the trivalent transition metal acts as an impurity of the barium titanate to create holes in the lattice. At this time, if the ratio of free electrons and holes is skewed toward one side, it acts as a fatal weakness in the reliability of the final product, and a problem may occur.

In addition, even if the transition metal is dissolved in barium titanate, valence electrons may be changed. Due to this, energy can be structurally absorbed or released in the particle, and this behavior increases the trap energy in the particle, thereby enabling improved reliability.

However, when the content of the transition metal is out of a certain range, the balance of the total charge ratio is broken, and the IR value may decrease at room temperature or high temperature, and thus reliability cannot be secured.

According to the dielectric composition of the present disclosure, when the mole concentration of the pentavalent transition metal is α and the molar concentration of the trivalent transition metal is β, y=α+β, and the pentavalent transition metal The content ratio of the trivalent transition metal to may satisfy 0.4≦α/β≦2.0.

The content of the pentavalent transition metal may satisfy α≥0, and the content of the trivalent transition metal may satisfy β>0.

When the number of particles in the dielectric layer has a great influence on the dielectric constant of the dielectric layer, the distribution of transition metals in the particles can have a great influence on the reliability of the capacitor.

If the transition metal concentration of the particles in the dielectric layer is discontinuous, the transition metal is not uniformly dissolved.

When the content ratio of the trivalent transition metal to the pentavalent transition metal satisfies 0.4≤α/β≤2.0, the transition metal in the particles can be dissolved at the maximum, thereby increasing the trap energy in the particles. In this way, the reliability of the dielectric layer can be improved.

When the content ratio of the trivalent transition metal to the pentavalent transition metal is less than 0.4, the concentration of the transition metal in the particles may be discontinuous, and effects due to the transition metal cannot be obtained.

When the content ratio of the trivalent transition metal to the pentavalent transition metal exceeds 2.0, the transition metal in the particles is excessively dissolved, so that the dielectric constant of the capacitor may decrease and aging may increase.

The y is the sum of the content of the pentavalent transition metal and the content of the trivalent transition metal, and may satisfy 0.001 to 0.010.

If y is less than 0.001, it may be difficult to implement reduction resistance of the capacitor, and if y exceeds 0.010, aging of the capacitor may increase, high temperature IR deterioration may occur, and dielectric constant may decrease.

Minor ingredients

According to an embodiment of the present disclosure, the dielectric composition includes a main component and a minor component of the base material, and the minor component is 0.5 to 1.4, which is an oxide or carbide containing at least one of Mg, Ba, and Ca based on 100 moles of the base material main component. Mole of the first sub-component, an oxide containing Si or a second sub-component of a glass compound containing Si, and a third of 0.6 to 1.5 mol of an oxide containing at least one of Dy, Y, Sn, Ho and Gd It may include a subcomponent and a fourth subcomponent which is an oxide containing Al.

The reduction resistance of the capacitor may be realized as the main component of the base material of the present disclosure. However, when the dielectric layer is composed of only the base material, the sintering temperature may increase, and it may be difficult to satisfy the important temperature characteristics of the multilayer ceramic capacitor.

According to the present disclosure, in order to solve the above problem, the subcomponent comprises 0.5 to 1.4 moles of the first subcomponent, Si, which is an oxide or carbide containing at least one of Mg, Ba, and Ca with respect to 100 moles of the main component of the base material. Oxide containing or a second subcomponent which is a glass compound containing Si, 0.6 to 1.5 mol of the third subcomponent which is an oxide containing at least one of Dy, Y, Sn, Ho, and Gd, and an oxide containing Al It may contain a fourth accessory ingredient.

The first accessory ingredient may be an oxide or carbide containing at least one of Mg, Ba, and Ca.

The first subcomponent is an element that has an important influence on forming a shell of the dielectric particles, and is a major factor in realizing sintering stability and dielectric properties.

The content of the first subcomponent may be 0.5 to 1.4 moles based on 100 moles of the main component of the base material.

If the content of the first sub-component is less than 0.5 mol, the reliability and sintering stability of the capacitor may decrease, and if the content of the first sub-component exceeds 1.4 mol, the firing temperature may increase when manufacturing the capacitor, and the dielectric constant of the capacitor is Can decrease.

The second subcomponent may be an oxide containing Si or a glass compound containing Si.

The second subcomponent may play a role of controlling a firing temperature when manufacturing a capacitor.

The content of the second sub-component may satisfy a≦b≦2a when a is the content of the first sub-component and b is the content of the second sub-component.

If the content of the second sub-component is less than the content of the first sub-component (a>b), the firing temperature may increase, thereby reducing the connectivity of the internal electrodes and reducing the dielectric constant.

If the content of the second sub-component exceeds twice the content of the first sub-component (b>2a), the secondary phase of Si may exist at the interface of the dielectric particles, which reduces the reliability of the capacitor and reduces the temperature coefficient of TCC (Temperature Coefficient of Capacitance) characteristics may be unstable.

The third accessory ingredient may be an oxide containing at least one of Dy, Y, Sn, Ho, and Gd.

The third sub-component is the most important element in implementing characteristics of a capacitor such as dielectric constant, reliability, and TCC characteristics of the capacitor.

The content of the third subcomponent may be 0.6 to 1.5 moles based on 100 moles of the main component of the base material.

If the content of the third sub-component is less than 0.6 mol, the dielectric constant of the capacitor decreases, so that high-capacity product characteristics may not be realized.If the content of the third sub-component exceeds 1.5 mol, the room temperature IR and high-temperature acceleration life of the capacitor are significantly reduced. Can decrease.

The fourth subcomponent may be an oxide containing Al.

The fourth subcomponent is an element that lowers the firing temperature and widens the firing window when manufacturing the capacitor.

The content of the fourth subcomponent may be 0.1 to 0.5 moles based on 100 moles of the main component of the base material.

1 is a schematic perspective view illustrating a multilayer ceramic capacitor 100 according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view illustrating the multilayer ceramic capacitor 100 taken along line AA′ of FIG. 1.

1 and 2, a multilayer ceramic capacitor 100 according to another embodiment of the present invention includes a structure in which a dielectric layer 111 and first and second internal electrodes 121 and 122 are alternately stacked. It has a ceramic body 110.

At both ends of the ceramic body 110, first and second external electrodes 131 and 132 that are alternately arranged inside the ceramic body 110 and electrically connected to first and second internal electrodes 121 and 122, respectively. Is formed.

Although there is no particular limitation on the shape of the ceramic body 110, it may generally have a rectangular parallelepiped shape. In addition, the size is also not particularly limited, and it can be set to an appropriate size depending on the application.

The thickness of the dielectric layer 111 may be arbitrarily changed according to the capacity design of the capacitor, and in one embodiment of the present disclosure, the thickness of the dielectric layer after firing may be preferably 0.2 μm or more per layer.

When the thickness of the dielectric layer is less than 0.2 μm, the number of crystal grains in one layer is small, and reliability may be degraded.

The first and second internal electrodes 121 and 122 are stacked so that their respective cross sections are alternately exposed on the surfaces of opposite ends of the ceramic body 110.

The first and second external electrodes 131 and 132 are formed at both ends of the ceramic body 110 and are electrically connected to exposed end surfaces of alternately arranged first and second internal electrodes 121 and 122. Construct a capacitor circuit.

The conductive material contained in the first and second internal electrodes 121 and 122 is not particularly limited, but the material constituting the dielectric layer according to an embodiment of the present invention is a mixed or solid solution of a paraelectric material and a ferroelectric material. Therefore, precious metals can be used.

The noble metal used as the conductive material may be a palladium (Pd) or a palladium (Pd) alloy.

The palladium (Pd) alloy may be an alloy of at least one element selected from manganese (Mn), chromium (Cr), cobalt (Co) and aluminum (Al) and palladium (Pd), and palladium (Pd) in the alloy ) The content may be 95% by weight or more.

The noble metal used as the conductive material may be a silver (Ag) or a silver (Ag) alloy.

The thickness of the first and second internal electrodes 121 and 122 may be appropriately determined according to a use, etc., and is not particularly limited, but may be, for example, 0.1 to 5 μm or 0.1 to 2.5 μm.

The conductive material contained in the first and second external electrodes 131 and 132 is not particularly limited, but nickel (Ni), copper (Cu), or an alloy thereof may be used.

The thickness of the first and second external electrodes 131 and 132 may be appropriately determined according to use, etc., and is not particularly limited, but may be, for example, 10 to 50 μm.

The dielectric layer 111 constituting the ceramic body 110 may include the dielectric composition according to an embodiment of the present invention.

The dielectric composition according to an embodiment of the present invention includes a main component and a sub-component of a base material, and includes a main and sub-component of a base material, and the main component of the base material is Ba _m (Ti _(1-y) M _y ) O ₃ (0.990 <m< 1.015, 0.001≦y≦0.010), and the transition metal M includes at least one of a pentavalent transition metal and a trivalent transition metal.

The transition metal may include at least one of Mn, Cr, V, Ni, Fe, and Co.

When the molar concentration of the pentavalent transition metal is α and the molar concentration of the trivalent transition metal is β, y=α+β, and the trivalent transition metal with respect to the pentavalent transition metal The content ratio may satisfy 0.4≦α/β≦2.0.

The sub-component is a first sub-component of 0.5 to 1.4 mol of an oxide or carbide containing at least one of Mg, Ba, and Ca based on 100 mol of the main component of the base material, an oxide containing Si, or a glass compound containing Si The phosphorus second subcomponent, Dy, Y, Sn, Ho, and Gd may include 0.6 to 1.5 moles of a third subcomponent, which is an oxide including at least one, and a fourth subcomponent which is an oxide including Al.

When the content of the first sub-component is a and the content of the second sub-component is b, the content of the second sub-component may satisfy a≦b≦2a.

The content of the fourth accessory ingredient may be 0.1 to 0.5 mol.

A detailed description of the dielectric composition is the same as the features of the dielectric composition according to the exemplary embodiment described above, and thus will be omitted herein.

Hereinafter, the present disclosure will be described in more detail through examples and comparative examples, but this is to help a specific understanding of the invention, and the scope of the present disclosure is not limited by the examples.

(Example)

In the dielectric composition, the composition and content of the main and sub-components of the base material were adjusted as shown in Table 1 below.

When preparing the slurry, zirconia balls were used as a mixing/dispersing media for the base material main component and minor component powder, and ethanol/toluene, a dispersant, and a binder were mixed and then mixed using an APEX mill.

The prepared mixed slurry was formed into a molded sheet having a thickness of 1.0 μm to 3 μm using a small blade type coater.

Nickel (Ni) internal electrodes were printed on the molding sheet, and the top and bottom covers were made by stacking dozens of layers of cover sheets (~3μm thick), and the sheets with the internal electrodes printed were laminated by pressing to produce a bar. I did. The pressing bar was cut into 3216 (length × width approximately 3.2 mm × 1.6 mm) chips using a cutter.

After calcining the cut chips, calcined for 1 hour at a temperature of 1050 to 1150°C in a reducing atmosphere (0.1% H ₂ /99.9% N ₂ , H ₂ O/H ₂ /N ₂ atmosphere), and then at 1000°C for 2 hours Reoxidation heat treatment was performed.

The fired chip was subjected to a termination process and electrode firing with a copper (Cu) paste to complete an external electrode.

Room temperature capacitance, dielectric loss, TCC characteristics, and high temperature reliability were evaluated for the multilayer ceramic capacitor completed as described above.

Room temperature capacitance and dielectric loss of a multilayer ceramic capacitor (MLCC) chip were measured at 1 kHz and AC 0.5V/µm using an LCR-meter.

As for the change in capacitance with temperature, the capacity value was measured under conditions of 1 kHz and AC 1.0 V/㎛ in the temperature range of -55°C to 85°C, and the rate of change in capacity compared to room temperature at 25°C was calculated.

The dielectric constant (relative dielectric constant) of the multilayer ceramic capacitor (MLCC) chip was calculated from the capacitance, the dielectric thickness of the multilayer ceramic capacitor (MLCC) chip, the internal electrode area, and the number of stacks.

The high-temperature IR boost test was performed at 130° C. under the condition of 1Vr=10V/µm to evaluate the high-temperature reliability.

Experimental example Base material main component Ba _m (Ti _(1-y) M _y ) O ₃ Number of moles of each subcomponent per 1.0 mole of the main component of the base material y=α+β First subcomponent SiO ₂ Third sub-ingredient Al ₂ O ₃ Sintering temperature (℃) One* α 0.0003
β 0.0005 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 2 α 0.0005
β 0.0005 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 3 α 0.0020
β 0.0020 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 4 α 0.0050
β 0.0050 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 5 α 0.0010
β 0.0020 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 6* α 0.0010
β 0.0030 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 7 α 0.0020
β 0.0010 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 8* α 0.0030
β 0.0010 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 9* α 0.0010
β 0.0010 BaO 0.002 0.002 Dy ₂ O ₃ 0.009 0.003 1165 10 α 0.0010
β 0.0010 BaO 0.005 0.005 Dy ₂ O ₃ 0.009 0.003 1140 11 α 0.0010
β 0.0010 BaO 0.008 0.008 Dy ₂ O ₃ 0.009 0.003 1130 12 α 0.0003
β 0.0005 BaO 0.014 0.014 Dy ₂ O ₃ 0.009 0.003 1130 13* α 0.0010
β 0.0010 BaO 0.016 0.016 Dy ₂ O ₃ 0.009 0.003 1150 14* α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.003 0.003 1130 15 α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.006 0.003 1140 16 α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.009 0.003 1140 17 α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.012 0.003 1130 18 α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.015 0.003 1130 19* α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.018 0.003 1120 20 α 0.0010
β 0.0010 CaO 0.006
BaO 0.004 0.010 Dy ₂ O ₃ 0.009 0.003 1140 21 α 0.0010
β 0.0010 MgO 0.006
BaO 0.004 0.010 Dy ₂ O ₃ 0.009 0.003 1130 22 α 0.0010
β 0.0010 CaO 0.006
MgO 0.004 0.010 Dy ₂ O ₃ 0.009 0.003 1130 23* α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.009 0.003 1150 24 α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.009 0.003 1140 25 α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.009 0.003 1130 26* α 0.0010
β 0.0010 BaO 0.010 0.010 Dy ₂ O ₃ 0.009 0.003 1130 27* α 0.0010
β 0.0010 BaO 0.008
CgO 0.008 0.010 Dy ₂ O ₃ 0.01 0.003 1150

*: Comparative example

Experimental example Ptoto-type Chip characteristics Characteristic judgment permittivity TCC(%)
(85℃) High temperature acceleration life (Vr)
(130℃) permittivity TCC
(85℃) High temperature acceleration life
(130℃) One* 7410 -14.7 3 ○ ○ × 2 7230 -12.9 4 ○ ○ ○ 3 6560 -11.4 4 ○ ○ ○ 4 6080 -10.6 4 ○ ○ ○ 5 6550 -11.1 5 ○ ○ ○ 6* 5890 -10.9 5 × ○ ○ 7 6630 -12.8 4 ○ ○ ○ 8* 6040 -12.4 3 ○ ○ × 9* 6100 -11.5 3 ○ ○ × 10 6680 -12.6 4 ○ ○ ○ 11 6810 -13.1 5 ○ ○ ○ 12 6290 -13.5 5 ○ ○ ○ 13* 5780 -12.8 4 × ○ ○ 14* 5900 -10.9 5 × ○ ○ 15 6270 -12.2 5 ○ ○ ○ 16 6520 -13.7 4 ○ ○ ○ 17 6830 -13.9 4 ○ ○ ○ 18 7110 -14.6 4 ○ ○ ○ 19* 7200 -15.5 2 ○ × × 20 6420 -13.5 4 ○ ○ ○ 21 6310 -14.3 4 ○ ○ ○ 22 6190 -14.7 4 ○ ○ ○ 23* 6310 -12.1 4 ○ ○ ○ 24 6670 -14.1 4 ○ ○ ○ 25 6740 -13.5 4 ○ ○ ○ 26* 6790 -15.3 3 ○ × × 27* 5630 -11.9 4 × ○ ○

○: good, ×: indicates poor. *: Comparative example

Referring to Table 2, since the multilayer ceramic capacitor including the dielectric composition according to an embodiment of the present disclosure has a dielectric constant of 6000 or more, and tends to have a value of 4Vr or more, which is a stable high-temperature acceleration life, high dielectric constant and excellent It can be seen that reliability can be secured.

On the other hand, in the case of Comparative Example 1, when the range of 0.001≤y≤0.010 is not satisfied, it can be seen that there is a side effect of lowering the high temperature acceleration life.

In Comparative Examples 6 and 8, 0.4≦α/β≦2.0 was not satisfied.

*Comparative Example 6 is a case where α/β is less than 0.4, that is, when there are relatively many trivalent transition metals compared to the molar concentration of the pentavalent transition metal, and it can be seen that the dielectric constant of the capacitor is not secured.

In Comparative Example 8, when α/β exceeded 2.0, it can be seen that high temperature reliability was not secured.

Comparative Examples 9, 13, and 27 show a case where the content range of 0.005 to 0.014 moles of the first subcomponent is not satisfied with respect to 1 mole of the main component of the base material.

In Comparative Example 9, when the content of the first subcomponent is less than 0.005 mol, it can be seen that the high temperature reliability of the capacitor is deteriorated, and the sintering temperature is increased due to the decrease in sintering stability.

In Comparative Examples 13 and 27, when the content of the first subcomponent exceeded 0.014 mol, the sintering temperature was increased and the dielectric constant was less than 6000, indicating that a high dielectric constant was not secured.

In Comparative Example 23, when the content of the second sub-component is less than the content of the first sub-component, it can be seen that the firing temperature is increased.

In Comparative Example 26, when the content of the second subcomponent exceeds twice the content of the first subcomponent, it can be seen that the high temperature reliability is deteriorated and the TCC characteristics are unstable.

In comparison, 14 and 19 show cases where the content range of 0.006 to 0.015 moles of the third subcomponent is not satisfied with respect to 1 mole of the main component of the base material.

In Comparative Example 14, when the content of the third accessory ingredient was less than 0.006 mol, the dielectric constant of the capacitor was decreased, and Comparative Example 19 was the case where the content of the third accessory ingredient exceeded 0.015 mol, and the high-speed acceleration life was significantly reduced. Can be seen.

The present disclosure is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited by the appended claims.

Therefore, various types of substitutions, modifications and changes will be possible by those of ordinary skill in the art within the scope not departing from the technical spirit of the present disclosure described in the claims, and this also belongs to the scope of the present disclosure. something to do.

100: multilayer ceramic capacitor 110: ceramic body
111: dielectric layers 121, 122: first and second internal electrodes
131, 132: first and second external electrodes

Claims (12)

It contains the main component and subcomponent of the parent material,
The main component of the base material is represented by Ba _m (Ti _(1-y) M _y ) O ₃ (0.990<m<1.015, 0.001≤y≤0.010), and the transition metal (M) is a pentavalent transition metal and a trivalent transition Contains at least one of metals,
The subcomponent is based on 100 moles of the main component of the base material,
A first subcomponent comprising at least one of Mg, Ba, and Ca in the range of 0.5 to 1.4 moles, and
A dielectric composition comprising a third subcomponent including at least one of Dy, Y, Sn, Ho, and Gd in the range of 0.6 to 1.5 moles.
According to claim 1
The sub-component is
A second subcomponent that is an oxide containing Si or a glass compound containing Si, and
A dielectric composition comprising a fourth subcomponent that is an oxide containing Al.
The method of claim 1,
The transition metal is a dielectric composition comprising at least one of Mn, Cr, V, Ni, Fe, and Co.
The method of claim 1,
When the molar concentration of the pentavalent transition metal is α and the molar concentration of the trivalent transition metal is β, y=α+β, and the trivalent transition metal with respect to the pentavalent transition metal A dielectric composition having a content ratio of 0.4≦α/β≦2.0.
The method of claim 2,
When the content of the first sub-component is a and the content of the second sub-component is b, the content of the second sub-component satisfies a≦b≦2a.
The method of claim 2,
The content of the fourth subcomponent is 0.1 to 0.5 moles based on 100 moles of the main component of the base material.
A ceramic body including a structure in which dielectric layers and first and second internal electrodes are alternately stacked; And
First and second external electrodes formed at both ends of the ceramic body and electrically connected to the first and second internal electrodes; and
The dielectric layer includes a main component and a subcomponent of a base material, and the main component of the base material is represented by Ba _m (Ti _(1-y) M _y ) O ₃ (0.990<m<1.015, 0.001≤y≤0.010), and a transition metal (M ) Includes at least one of a pentavalent transition metal and a trivalent transition metal,
The subcomponent is based on 100 moles of the main component of the base material,
A first subcomponent comprising at least one of Mg, Ba, and Ca in the range of 0.5 to 1.4 moles, and
A multilayer ceramic capacitor comprising a third subcomponent including at least one of Dy, Y, Sn, Ho, and Gd in a range of 0.6 to 1.5 moles.
The method of claim 7,
The subcomponent is a multilayer ceramic capacitor including a second subcomponent which is an oxide containing Si or a glass compound containing Si and a fourth subcomponent which is an oxide containing Al.
The method of claim 7,
The transition metal is a multilayer ceramic capacitor including at least one of Mn, Cr, V, Ni, Fe, and Co.
The method of claim 7,
When the molar concentration of the pentavalent transition metal is α and the molar concentration of the trivalent transition metal is β, y=α+β, and the trivalent transition metal with respect to the pentavalent transition metal A multilayer ceramic capacitor having a content ratio of 0.4≤α/β≤2.0
The method of claim 8,
When the content of the first sub-component is a and the content of the second sub-component is b, the content of the second sub-component satisfies a≦b≦2a.
The method of claim 8,
The content of the fourth subcomponent is 0.1 to 0.5 moles based on 100 moles of the base material main component.

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