KR102174501B1 - Method of manufacturing flexible thermoelectric devices and Flexible thermoelectric devices - Google Patents

Abstract

The present invention relates to a method of manufacturing a flexible thermoelectric device, and includes a nano material layer forming step, an etching step, a compressive force application step, and an insulating step. In the nanomaterial layer forming step, a two-dimensional nanomaterial is formed in multiple layers, and a nanomaterial layer in which the P-type impurity region and the N-type impurity region are repeatedly formed is formed on the base substrate. In the etching step, the base substrate is etched to remove the base substrate from the nanomaterial layer. In the compressive force application step, during the etching step, a compressive force is applied in a direction from both sides of the nanomaterial layer toward the center so that the nanomaterial layer is bent. In the insulating step, in order to electrically insulate the entire surface and the outside of the bent nanomaterial layer, the bent nanomaterial layer is wrapped with an insulating part of an elastic material.

Description

TECHNICAL FIELD [Method of manufacturing flexible thermoelectric devices and Flexible thermoelectric devices]

The present invention relates to a flexible thermoelectric device manufacturing method and a flexible thermoelectric device, and to a flexible thermoelectric device manufacturing method and a flexible thermoelectric device capable of being used in an environment where mechanical flexibility is excellent and is bent or stretched.

Thermoelectric conversion refers to energy conversion between thermal energy and electrical energy. Thermoelectric conversion is represented by the Peltier effect, in which a temperature difference occurs between both ends of a thermoelectric material, and, conversely, the Seebeck effect, in which electricity is generated when there is a temperature difference between both ends of the thermoelectric material. do.

The cooling module using the Peltier effect has the advantage of high thermal response sensitivity, local selective cooling, and a simple structure because there is no operating part.Therefore, it is used for optical communication LD modules, high-power transistors, infrared sensing devices, and electronic devices such as CCDs. It is being put into practical use for local cooling of parts, and is applied to a thermostat for industrial and consumer use, as well as a thermostat for scientific and medical use.

Thermoelectric power generation using the Seebeck effect can generate power by only giving a temperature difference, so the range of choice of heat sources is wide, and the structure is simple and there is no noise, so its use was limited to special small power devices including military power supplies recently. Economical uses are increasing in fields such as thermoelectric generators using industrial waste heat and alternative independent power sources.

Currently, thermoelectric materials with high performance are mostly composed of semiconductor metal materials or ceramic materials. These materials have excellent thermoelectric properties, but since most of the materials are dense, there is a problem of increasing weight because a large amount of material is required to produce a lot of power. Due to this problem, a thermoelectric device using the material has a limitation that is difficult to apply to the automobile industry or the mobile industry that requires weight reduction.

In addition, ceramic-based thermoelectric materials have high brittleness, are limited in their shape, and cannot be used in an environment such as bending or stretching, so they are limited in application to wearable devices and sensor networks.

Korean Patent Application Publication No. 2018-0060217 (published on June 7, 2018, title of invention: manufacturing method of flexible thermoelectric device and flexible thermoelectric device manufactured through it)

Accordingly, the problem to be solved by the present invention is to solve such a conventional problem, and by manufacturing a thermoelectric element based on a two-dimensional nanomaterial layer having excellent mechanical flexibility in a bent state, the thermoelectric element is repeatedly bent. To provide a flexible thermoelectric device manufacturing method and a flexible thermoelectric device that can be used in an environment subjected to stress, tensile stress or compressive stress and are not damaged by vibration or impact.

In order to achieve the above object, a method of manufacturing a flexible thermoelectric device includes a nanomaterial layer forming step of forming a nanomaterial layer in which a two-dimensional nanomaterial is formed in multiple layers on a base substrate; A doped region partitioning step of partitioning the nanomaterial layer so that P-type impurity regions and N-type impurity regions are repeatedly formed; An etching step of etching the base substrate to remove the base substrate from the nanomaterial layer; During the etching step, a compressive force applying step of applying a compressive force in a direction from both sides of the nanomaterial layer toward the center so that the nanomaterial layer is bent; And an insulating step of wrapping the bent nanomaterial layer with an insulating portion made of an elastic material in order to electrically insulate the entire surface and the outside of the bent nanomaterial layer.

In addition, in order to achieve the above object, the method of manufacturing a flexible thermoelectric device includes a two-dimensional nanomaterial formed in multiple layers, and a nanomaterial layer in which a P-type impurity region and an N-type impurity region are repeatedly formed is formed on a bent base substrate. Forming a nano material layer; An etching step of etching the base substrate to remove the base substrate from the nanomaterial layer; And an insulating step of wrapping the bent nanomaterial layer with an insulating portion of an elastic material in order to electrically insulate the entire surface and the outside of the bent nanomaterial layer.

In the method of manufacturing a flexible thermoelectric device according to the present invention, the forming of the nanomaterial layer comprises: forming a nanomaterial base layer by forming the two-dimensional nanomaterial into multiple layers to form a nanomaterial base layer; A defect forming step of forming a defect in the nanomaterial base layer; And a heterogeneous material bonding step of bonding the 2D nanomaterial and a different material, which is a different material, to a portion in which the defect is formed in the nanomaterial base layer.

In the method of manufacturing a flexible thermoelectric device according to the present invention, in the bonding of the heterogeneous material, the P-type impurity region and the P-type impurity region in the nanomaterial layer are selectively combined with the defects of the nanomaterial base layer. Each of the N-type impurity regions may be formed.

In the method of manufacturing a flexible thermoelectric device according to the present invention, the defect forming step may form a defect in the nanomaterial base layer in a linear shape along a direction in which a temperature gradient is formed.

In the flexible thermoelectric device manufacturing method according to the present invention, in the applying of the compressive force, the compressive force may be formed by forming a flow of compressed air in a direction from both sides of the nanomaterial layer toward the center or by forming a flow of an etching solution. have.

In the method of manufacturing a flexible thermoelectric device according to the present invention, a washing step of washing the nanomaterial layer from which the base substrate has been removed, which is performed before the insulating step, may further include.

In the method of manufacturing a flexible thermoelectric device according to the present invention, the step of forming a wire terminal on both ends of the nano-material layer for electrical connection to the nano-material layer and externally is performed before the insulating step; further comprising: can do.

In the flexible thermoelectric device manufacturing method according to the present invention, the 2D nanomaterial may include hexagonal boron nitride or graphene.

In addition, in order to achieve the above object, the flexible thermoelectric device includes: a nanomaterial layer in which a two-dimensional nanomaterial is formed in multiple layers, a P-type impurity region and an N-type impurity region are repeatedly partitioned, and a curved nanomaterial layer; And an insulating portion made of an elastic material surrounding the bent-shaped nano-material layer in order to electrically insulate the entire surface and the outside of the bent-shaped nano-material layer.

In the flexible thermoelectric device according to the present invention, the nano-material layer comprises: a nano-material base layer in which the two-dimensional nano-material is formed in multiple layers; Defects formed in the nanomaterial base layer; And a heterogeneous material that is bonded to a portion in which the defect is formed in the nanomaterial base layer and is a material different from the 2D nanomaterial.

In the flexible thermoelectric device according to the present invention, the P-type impurity region and the N-type impurity region are respectively formed in the nanomaterial layer by selectively bonding different materials of different properties to defects in the nanomaterial base layer. I can.

In the flexible thermoelectric device according to the present invention, defects formed in the nanomaterial base layer may be formed in a linear shape along a direction in which a temperature gradient is formed.

In the flexible thermoelectric device according to the present invention, the two-dimensional nanomaterial may include hexagonal boron nitride or graphene.

According to the flexible thermoelectric device manufacturing method and the flexible thermoelectric device of the present invention, the thermoelectric device can be used in an environment in which the thermoelectric device is subjected to repeated bending stress, tensile stress, or compressive stress, and may not be damaged by vibration or impact.

Further, according to the flexible thermoelectric device manufacturing method and the flexible thermoelectric device of the present invention, it is possible to increase the performance index (ZT) of the thermoelectric material forming the flexible thermoelectric device.

1 is a view for explaining a step of forming a nano material layer in a method of manufacturing a flexible thermoelectric device according to an embodiment of the present invention,
2 is a view for explaining the etching step of the flexible thermoelectric device manufacturing method of FIG. 1,
3 is a view for explaining a compressive force application step of the flexible thermoelectric device manufacturing method of FIG. 1,
4 is a view for explaining an insulation step of the method of manufacturing the flexible thermoelectric device of FIG. 1,
FIG. 5 is a diagram sequentially showing a step of forming a nanomaterial layer in the method of manufacturing the flexible thermoelectric device of FIG. 1,
6 is a graph showing the relationship between the figure of merit with respect to the defect density of the nanomaterial layer in the method of manufacturing the flexible thermoelectric device of FIG. 1,
7 is a diagram sequentially illustrating a method of manufacturing a flexible thermoelectric device according to another embodiment of the present invention.

Hereinafter, a method of manufacturing a flexible thermoelectric device and embodiments of a flexible thermoelectric device according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a view for explaining a step of forming a nano material layer in a method for manufacturing a flexible thermoelectric device according to an embodiment of the present invention, and FIG. 2 is a view for explaining an etching step in the method for manufacturing a flexible thermoelectric device of FIG. 3 is a view for explaining the step of applying a compressive force in the method of manufacturing the flexible thermoelectric device of FIG. 1, FIG. 4 is a view for explaining the insulation step of the method of manufacturing the flexible thermoelectric device of FIG. 1, and FIG. It is a diagram sequentially showing the steps of forming a nanomaterial layer in a method of manufacturing a thermoelectric device, and FIG. 6 is a graph showing a relationship between a performance index with respect to a defect density of a nanomaterial layer in the method of manufacturing a flexible thermoelectric device of FIG. 1.

1 to 6, the flexible thermoelectric device manufacturing method according to the present embodiment is for manufacturing a thermoelectric device based on a two-dimensional nano material layer having excellent mechanical flexibility in a folded state, and forming a nano material layer A step S110, an etching step S120, a compressive force application step S130, a cleaning step (not shown), a wiring terminal forming step (not shown), and an insulating step S140.

In the nanomaterial layer forming step (S110), a two-dimensional nanomaterial is formed in multiple layers, and a nanomaterial layer 120 in which the P-type impurity region 126 and the N-type impurity region 127 are repeatedly formed is formed on a base substrate ( 110) to form on.

The 2D nanomaterial of this embodiment is preferably hexagonal boron nitride (HBN) or graphene. In addition, as a 2D nanomaterial, transition metal dichalcogenide (TMD) may be used.

Graphene is a conductive material having a single layer of carbon atoms in a honeycomb arrangement in two dimensions, and is suitable as a thermoelectric material for flexible thermoelectric devices because of its excellent elasticity and flexibility.

In addition, semiconducting hexagonal boron nitride (HBN) may be more preferable than metallic graphene.

It is preferable that the base substrate 10 of this embodiment has a flat plate shape.

Meanwhile, when discussing the thermoelectric properties of a thermoelectric material, a dimensionless figure of merit (ZT) is generally considered, which is expressed as shown in the following [Equation 1], and the performance index (ZT) Higher means that the energy conversion efficiency of the thermoelectric material is high.

Here, σ is the electrical conductivity, α is the Seebeck coefficient, T is the temperature difference, and κ is the thermal conductivity.

For a high thermoelectric effect, a thermoelectric material having a high index of merit is desirable, and for this, a material having a large Seebeck coefficient or electrical conductivity of the thermoelectric material or a material having low thermal conductivity is ideal.

Referring to FIG. 5, the nanomaterial layer forming step (S110) of the present embodiment may include a nanomaterial base layer forming step (S111), a defect forming step (S112), and a dissimilar material combining step (S113).

In the nanomaterial base layer forming step (S111), a nanomaterial base layer 121 is prepared by forming a two-dimensional nanomaterial into multiple layers.

When the number of layers of the nanomaterial base layer 121 is increased to form multiple layers, the electrical conductivity is mainly increased, and the thermal conductivity is less increased due to the interaction between the layer and the layer, thereby further improving the performance index (ZT). .

In the defect forming step (S112), a defect 122 is formed in the nanomaterial base layer 121.

Referring to FIG. 6, the figure of merit (ZT) gradually decreases in the section where the defect density (ID/IG) is 0 or more and about 1.0 or less, but when the defect density (ID/IG) exceeds 1.0, the defect density (ID/IG) It can be seen that as) increases, the performance index (ZT) increases rapidly.

Therefore, in the present embodiment, for example, the defect density (ID/IG) is formed to be about 1.5 or more so that the defect density (ID/IG) is higher than the performance index (ZT) when the defect density (ID/IG) is 0. By doing so, the figure of merit (ZT) can be increased.

In order to form the defect 122 on the nanomaterial base layer 121, a plasma treatment, ion beam irradiation, patterning process, etc. may be used.

In the defect forming step (S112), it is preferable to form the defect 122 in the nanomaterial base layer 121 in a linear shape along the direction in which the temperature gradient is formed.

When the defects 122 are formed in a linear shape along the direction in which the temperature gradient is formed rather than randomly forming the defects 122 on the nanomaterial base layer 121, phonon scattering in the defects 122 along the direction in which heat is transferred As a result, the thermal conductivity of the nanomaterial layer 120 is greatly reduced, whereas the average free path of electrons is very short compared to the phonon, so the additional scattering effect by the defect 122 is insignificant, and the electrical conductivity is reduced. The reduction is not large. Therefore, referring to [Equation 1], the figure of merit ZT can be further increased as the thermal conductivity is relatively significantly reduced compared to the electrical conductivity.

In the step of combining the heterogeneous material (S113), the two-dimensional nanomaterial and the heterogeneous material 123, which are different materials, are combined with the two-dimensional nanomaterial to the portion where the defect 122 is formed in the nanomaterial base layer 121.

In the heterogeneous material bonding step (S113), an ALD process or a plating process may be used.

The heterogeneous material 123 combined in the heterogeneous material bonding step (S113) may be Al2O3, TiO2, ZnO, HfO2, Pt, etc. Among these, when the two-dimensional nanomaterial is graphene, it is most effective when combined with graphene. What is HfO2.

In general, a material with a large difference in electronegativity and atoms constituting a 2D nanomaterial increases the Seebeck coefficient to increase the index of merit (ZT), and a material with a large difference in mass decreases the thermal conductivity. (ZT) can be increased. Therefore, HfO2, which has a large difference in electronegativity and a large difference in mass from the carbon atoms constituting graphene among the above examples, is preferable.

In the heterogeneous material bonding step (S113), by selectively bonding the heterogeneous material 123 of different properties to the defect 122 of the nanomaterial base layer, the P-type impurity region 126 and the N Each type impurity region 127 may be formed.

That is, the heterogeneous material 123 corresponding to the P-type impurity among the heterogeneous materials 123 is combined with the defect 122 to form a P-type impurity region 126 in which a plurality of carriers are holes, and the P-type impurity region In a region adjacent to 126, a heterogeneous material 123 corresponding to an N-type impurity among the heterogeneous materials 123 is combined with the defect 122 to form an N-type impurity region 127 in which a plurality of carriers are electrons. I can. In this way, the P-type impurity region 126 and the N-type impurity region 127 are repeatedly formed, so that the entire nanomaterial layer 120 is divided into the P-type impurity region 126 and the N-type impurity region 127. I can.

On the other hand, in addition to the method of selectively bonding the heterogeneous material 123 to the defect 122 as described above, the heterogeneous material 123 of the same property is combined with the defect 122 of the nanomaterial base layer 121 After the layer 120 is formed, a generally used P-type impurity and an N-type impurity are alternately implanted through an additional doping process, so that the nanomaterial layer 120 is transferred to the P-type impurity region 126 and the N-type impurity. It may be divided into regions 127. Since such a doping process is general, detailed descriptions are omitted.

At this time, the P-type impurities injected into the P-type impurity region 126 are iron chloride, gold chloride, silver chloride, carbazole and its derivatives, poly(3,4-ethylenedioxythiophene), polystyrene sulfonate, benzoquinone, and tetracylate. Impurities including at least one selected from anoquinone, terafluoroquinodimethane, iodine compound, diphenylidine, imidazole, triazole, polyazine, polyaniline, pyridine triphenylamine, tetrathiafulvalene and pyrazine May be, but is not limited thereto.

In addition, the N-type impurities injected into the N-type impurity region 127 include polyethyleneimine, poly(4-aminostyrene), poly(4-vinylpyridine), polyarylamine, polyvinylamine, hydrazine, benzylbiologen, and It may be an impurity including at least one selected from ethylenediamine, triethyleneamine, ethylamine, pyrrolidine, triphenylphosphate, polyvinylpyrrolidone, tetramethyl-phenylenediamine and ferrocene, but is not limited thereto. .

After the nanomaterial layer 120 is divided into a P-type impurity region 126 and an N-type impurity region 127, a separate insulating layer 130 may be formed on the nanomaterial layer 120.

In the etching step (S120), the base substrate 110 is etched to remove the base substrate 110 from the nanomaterial layer 120.

Referring to FIG. 3, for example, when the base substrate 110 is made of copper, the base substrate 110 on which the nanomaterial layer 120 is formed is prepared with an etching solution 10 such as an ammonium persulfate ((NH4)2SO8) solution. ) By impregnation, the base substrate 110 is removed and only the nanomaterial layer 120 is left. By etching with an ammonium persulfate ((NH4)2SO8) solution, the subsequent cleaning time is shortened and contamination of the nanomaterial layer 120 is reduced.

The compressive force application step (S130) applies a compressive force (P) in a direction from both sides of the nano material layer 120 toward the center so that the nano material layer 120 is bent during the etching step (S120).

3, in the compression force application step (S140), the compression force (P) by forming a flow of compressed air in a direction from both sides of the nano material layer 120 toward the center portion or by forming a flow of the etching solution 10 Can be formed.

Since the nanomaterial layer 120 is thin and light, there is a risk that the nanomaterial layer 120 may be damaged when a compressive force (P) is applied using a member in contact with the nanomaterial layer 120. Therefore, by supplying compressed air through a port (not shown) provided on the side of the receiving container accommodating the etching solution 10, a flow of compressed air is formed, or a blower and a port capable of pressurizing the etching solution 10 are connected. Thus, by forming a flow of the etching solution 10, forming a compressive force (P) can prevent damage to the nano material layer 120.

The cleaning step (not shown) is performed before the insulating step S140 and the nanomaterial layer 120 from which the base substrate 110 has been removed is cleaned. The cleaning liquid used in the cleaning step is also a material commonly used in a semiconductor process, and a detailed description thereof is omitted.

After the washing step, a drying step of drying the washed nanomaterial layer 120 may be included.

The wiring terminal forming step (not shown) is performed before the insulating step (S140), and wiring terminals 150 are formed on both ends of the nanomaterial layer 120 for electrical connection with the nanomaterial layer 120 do.

In the insulating step (S140), in order to electrically insulate the entire surface of the bent nanomaterial layer 120 and the outside, the bent nanomaterial layer 120 is wrapped with an insulating part 140 made of an elastic material.

4, in the insulating step (S140) of the present embodiment, the nanomaterial layer 120 is impregnated with an elastic polymer so that the polymer surrounds the nanomaterial layer 120, so that the surface of the nanomaterial layer 120 You can make this insulating coating.

In addition, by forming the flexible thermoelectric device 100 composed of the bent nanomaterial layer 120 and the insulating part 140 made of elastic material, it is possible to expand and contract even in an environment subjected to repeated bending stress, tensile stress or compressive stress. Can have excellent flexibility and rigidity.

The flexible thermoelectric device 100 according to an embodiment of the present invention may be manufactured by the above-described flexible thermoelectric device manufacturing method, and includes a nano material layer 120 and an insulating part 140. .

The nanomaterial layer 120 is formed of a two-dimensional nanomaterial in multiple layers, the P-type impurity region 126 and the N-type impurity region 127 are repeatedly partitioned, and formed in a curved shape.

The insulating part 140 surrounds the bent-shaped nano-material layer 120 and is formed of an elastic material in order to electrically insulate the entire surface and the outside of the bent-shaped nano-material layer 120.

In this case, the nanomaterial layer 120 may include a nanomaterial base layer 121, a defect 122, and a heterogeneous material 123.

The nanomaterial base layer 121 is formed as a multilayer through stacking or synthesis of a two-dimensional nanomaterial, and the defect 122 is formed on the nanomaterial base layer 121, and the heterogeneous material 123 is a nanomaterial base layer ( 121) is bonded to the region where the defect 122 is formed, and is composed of a material different from the 2D nanomaterial. At this time, the 2D nanomaterial is preferably hexagonal boron nitride (HBN) or graphene.

The heterogeneous materials 123 of different properties are selectively bonded to the defect 122 of the nanomaterial base layer, thereby forming a P-type impurity region 126 and an N-type impurity region 127 in the nanomaterial layer 120, respectively. Can be.

The defect 122 formed on the nanomaterial base layer 121 is preferably formed in a linear shape along the direction in which the temperature gradient is formed.

The bent nanomaterial layer 120 constituting the flexible thermoelectric device 100 and the insulating portion 140, as well as the nanomaterial base layer 121 constituting the nanomaterial layer 120, and the defect 122 And, since the dissimilar materials 123 are substantially the same as those described in the process of describing a method of manufacturing a flexible thermoelectric device, a duplicate description will be omitted.

The flexible thermoelectric device 100 of the present invention may be made into a curved shape by applying a compressive force (P) in a direction from both sides of the nano material layer 120 toward the center, or a nano material on a base substrate having a shape that is bent from the beginning. It may be manufactured without applying a separate compressive force by forming a layer.

On the other hand, a method of manufacturing a flexible thermoelectric device according to another embodiment of the present invention has a difference from the embodiments shown in FIGS. 1 to 4 in that it uses a bent base substrate 111.

Referring to FIG. 7, the method of manufacturing a flexible thermoelectric device according to this embodiment includes a nano material layer forming step (S210), an etching step (S220), a washing step (not shown), an insulating step (S230), and a wiring terminal. It includes a step (not shown).

Since the technical characteristics of the embodiments shown in FIGS. 1 to 4 are substantially the same as those of the embodiments shown in FIGS. 1 to 4 except that a separate compressive force application step is not required by using the bent base substrate 111 in the nano material layer forming step S210 Redundant descriptions are omitted.

The flexible thermoelectric device manufacturing method and the flexible thermoelectric device of the present invention configured as described above, by manufacturing a thermoelectric device based on a two-dimensional nanomaterial layer having excellent mechanical flexibility in a bent state, the thermoelectric device repeats bending stress, It can be used in an environment subjected to tensile or compressive stress, and it is possible to obtain the effect of not being damaged by vibration or impact.

In addition, the flexible thermoelectric device manufacturing method and the flexible thermoelectric device of the present invention configured as described above have a method of forming a defect in a two-dimensional nanomaterial layer, in a linear form along the direction in which a defect temperature gradient is formed in the nanomaterial layer. By using at least one of a method of forming and a method of bonding different materials to a portion where a defect is formed, an effect of increasing the performance index (ZT) of the thermoelectric material forming the flexible thermoelectric element can be obtained.

The scope of the present invention is not limited to the above-described embodiments and modifications, but may be implemented in various forms within the scope of the appended claims. Without departing from the gist of the present invention claimed in the claims, any person of ordinary skill in the art to which the present invention belongs is considered to be within the scope of the description of the claims of the present invention to various ranges that can be modified.

100: flexible thermoelectric element
110: base substrate
120: nano material layer
121: nano material base layer
122: defect
123: heterogeneous substance
130: insulating layer
140: insulation part
150: wiring terminal

Claims (14)

A nanomaterial layer forming step of forming a nanomaterial layer in which a 2D nanomaterial is formed in multiple layers and a P-type impurity region and an N-type impurity region are repeatedly formed on a base substrate;
An etching step of etching the base substrate to remove the base substrate from the nanomaterial layer;
During the etching step, a compressive force applying step of applying a compressive force in a direction from both sides of the nanomaterial layer toward the center so that the nanomaterial layer is bent; And
Insulation step of wrapping the bent nanomaterial layer with an insulating part of an elastic material in order to electrically insulate the entire surface and the outside of the bent nanomaterial layer; including,
The compressing force applying step,
A method of manufacturing a flexible thermoelectric device, characterized in that compressive force is formed by forming a flow of compressed air in a direction from both sides of the nanomaterial layer toward the center or by forming a flow of an etching solution. A nanomaterial layer forming step of forming a nanomaterial layer in which a 2D nanomaterial is formed in multiple layers, and a P-type impurity region and an N-type impurity region are repeatedly formed on a curved base substrate;
An etching step of etching the base substrate to remove the base substrate from the nanomaterial layer; And
Insulation step of wrapping the bent nanomaterial layer with an insulating part of an elastic material in order to electrically insulate the entire surface and the outside of the bent nanomaterial layer; including,
The step of forming the nano material layer,
A nanomaterial base layer forming step of forming a nanomaterial base layer by forming the two-dimensional nanomaterial into multiple layers;
A defect forming step of forming a defect in a linear shape along a direction in which a temperature gradient is formed in the nanomaterial base layer so that the defect density exceeds 1; And
A method of manufacturing a flexible thermoelectric device comprising: a heterogeneous material bonding step of bonding the two-dimensional nanomaterial and a heterogeneous material, which is another material, to a portion where a defect is formed in the nanomaterial base layer. The method of claim 1,
The step of forming the nano material layer,
A nanomaterial base layer forming step of forming a nanomaterial base layer by forming the two-dimensional nanomaterial into multiple layers;
A defect forming step of forming a defect in the nanomaterial base layer; And
A method of manufacturing a flexible thermoelectric device comprising: a heterogeneous material bonding step of bonding the two-dimensional nanomaterial and a heterogeneous material, which is another material, to a portion where a defect is formed in the nanomaterial base layer. The method according to claim 2 or 3,
The step of combining the heterogeneous material,
The method of manufacturing a flexible thermoelectric device, characterized in that the P-type impurity region and the N-type impurity region are respectively formed in the nanomaterial layer by selectively bonding different materials of different properties to defects in the nanomaterial base layer. The method of claim 3,
In the step of forming the defect, the method of manufacturing a flexible thermoelectric device, wherein the defect is formed in a linear shape along a direction in which a temperature gradient is formed in the nanomaterial base layer. delete The method according to claim 1 or 2,
A method of manufacturing a flexible thermoelectric device further comprising a; washing step of washing the nanomaterial layer from which the base substrate has been removed and performed before the insulating step. The method according to claim 1 or 2,
The method of manufacturing a flexible thermoelectric device further comprising: a wiring terminal forming step performed before the insulating step and forming wiring terminals at both ends of the nanomaterial layer for electrical connection between the nanomaterial layer and the outside. The method according to claim 1 or 2,
The 2D nanomaterial is a flexible thermoelectric device manufacturing method, characterized in that it comprises hexagonal boron nitride or graphene. 2D nanomaterial is formed in multiple layers, P-type impurity region and N-type impurity region are repeatedly partitioned, and a bent nanomaterial layer; And
Including; an insulating portion of an elastic material surrounding the bent-shaped nanomaterial layer to electrically insulate the entire surface and the outside of the bent-shaped nanomaterial layer,
The nano material layer,
A nanomaterial base layer in which the two-dimensional nanomaterial is formed in multiple layers;
A defect formed in a linear shape along a direction in which a temperature gradient is formed such that a defect density of the nanomaterial base layer exceeds 1; And
A flexible thermoelectric device comprising: a heterogeneous material which is a material different from the 2D nanomaterial and bonded to a portion where a defect is formed in the nanomaterial base layer. delete The method of claim 10,
A flexible thermoelectric device, characterized in that the P-type impurity region and the N-type impurity region are respectively formed in the nanomaterial layer by selectively bonding different materials of different properties to defects in the nanomaterial base layer. delete The method of claim 10,
The 2D nanomaterial is a flexible thermoelectric device, characterized in that it comprises hexagonal boron nitride or graphene.

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