KR102173135B1 - Flexible substrate, method for manufacturing flexible substrate, flexible display device, and method for flexible display device - Google Patents

Abstract

Preparing a support, forming an auxiliary layer including a silicon-containing material and gold (Au) particles on the support, forming a polymer thin film on the auxiliary layer, and after forming the polymer thin film, removing the support It relates to a method of manufacturing a flexible substrate including the step of, and a flexible substrate according to the method.

Description

A flexible substrate, a method of manufacturing a flexible substrate, a flexible display device, and a method of manufacturing a flexible display device {FLEXIBLE SUBSTRATE, METHOD FOR MANUFACTURING FLEXIBLE SUBSTRATE, FLEXIBLE DISPLAY DEVICE, AND METHOD FOR FLEXIBLE DISPLAY DEVICE}

The present invention relates to a flexible substrate, a method of manufacturing a flexible substrate, a flexible display device, and a method of manufacturing a flexible display device.

A display device is a device that displays an image, and recently, an organic light emitting diode display has been attracting attention.

The organic light-emitting display device has a self-emission characteristic, and unlike a liquid crystal display device, it does not require a separate light source, and thus the thickness and weight can be reduced. In addition, the OLED display exhibits high quality characteristics such as low power consumption, high luminance, and high reaction speed.

In general, a display device such as an organic light emitting display device includes a substrate such as a glass substrate and an element positioned on the substrate.

Recently, research has been conducted on a technique of fabricating a substrate as a flexible substrate to implement the entire display device as a flexible display device.

The flexible substrate may be supported by a support such as a glass substrate due to its flexible nature to perform a process, and after the process is completed, the flexible substrate may be detached from the support. A laser may be used when detaching the flexible substrate from the support, but the laser may cause static electricity to degrade the reliability of the display device and may be expensive.

One embodiment provides a method of manufacturing a flexible substrate capable of detaching a support without using a laser.

Another embodiment provides a method of manufacturing a flexible display device in which a flexible substrate and a support are detachable without using a laser.

Another embodiment provides a flexible substrate and a display device according to the manufacturing method.

According to one embodiment, preparing a support, forming an auxiliary layer including a silicon-containing material and gold (Au) particles on the support, forming a polymer thin film on the auxiliary layer, and forming the polymer thin film Then, it provides a flexible substrate manufacturing method comprising the step of removing the support.

The silicon-containing material may include a thiol group at the terminal.

The silicon-containing material may be represented by Formula 1 below.

[Formula 1]

In Formula 1,

L ₁ to L ₄ are each independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 alkoxyylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or non-substituted A ringed C2 to C30 heterocycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof,

R, R'and R" are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C2 to C30 A heteroaryl group, a substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.

The silicon-containing material may be represented by Formula 2 below.

[Formula 2]

In Chemical Formula 2,

R is a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted Or an unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.

The gold (Au) particles may have a particle diameter of 5 nm to 20 nm.

The gold (Au) particles may be located on the silicon-containing material.

The polymer thin film may have a thickness of 1 μm to 10 μm.

The polymer thin film may include polyimide, polycarbonate, polyethylene terephthalate, or a combination thereof.

At least one of the step of forming the auxiliary layer and the step of forming the polymer thin film may be performed by a solution process.

The step of removing the support may be a step of removing the support without using a laser.

According to another embodiment, forming an auxiliary layer comprising a silicon-containing material and gold (Au) particles on a support, forming a polymer thin film on the auxiliary layer, forming a device on the polymer thin film, and the support It provides a method of manufacturing a flexible display device including removing the.

The device may include a thin film transistor, an organic light emitting device, a liquid crystal display device, or a combination thereof.

The device may include a thin film transistor and an organic light emitting device electrically connected to the thin film transistor.

According to another embodiment, a flexible substrate and a flexible display device manufactured by the above method are provided.

By removing the support from the flexible substrate without using a laser, it is possible to prevent defects in the display device due to generation of static electricity and reduce cost.

1 to 3 are cross-sectional views illustrating a method of manufacturing a flexible substrate according to an embodiment.
4 to 7 are cross-sectional views illustrating a method of manufacturing a flexible display device according to another embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art may easily implement the present invention. However, the present invention may be implemented in various different forms, and is not limited to the embodiments described herein.

In the drawings, the thicknesses are enlarged to clearly express various layers and regions. The same reference numerals are assigned to similar parts throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the case where the other part is "directly above", but also the case where there is another part in the middle. Conversely, when one part is "right above" another part, it means that there is no other part in the middle.

In addition, throughout the specification, when a part "includes" a certain component, it means that other components may be further included rather than excluding other components unless otherwise stated. In addition, throughout the specification, the term "on" means that it is positioned above or below the target portion, and does not necessarily mean that it is positioned above the direction of gravity.

In addition, in the present specification, unless otherwise defined, at least one hydrogen atom is deuterium, C1 to C30 alkyl group, C6 to C36 aryl group, C2 to C30 heteroaryl group, C1 to C30 unless otherwise defined. Alkoxy group, C2 to C30 alkenyl group, C6 to C30 aryloxy group, C3 to C40 silyloxy group, C1 to C30 acyl group, C2 to C30 acyloxy group, C2 to C30 heteroaryloxy group, C1 to C30 sulfonyl group, C1 to C30 alkylthiol group, C6 to C30 arylthiol group, C1 to C30 heterocyclothiol group, C1 to C30 phosphate amide group, C3 to C40 silyl group, NR ₁ R ₂ (wherein R ₁ and R ₂ are each Independently, it is a substituent selected from the group consisting of a hydrogen atom, a C1 to C30 alkyl group, and a C6 to C30 aryl group), a carboxyl group, a halogen group, a cyano group, a nitro group, an azo group, a fluorene group, and a hydroxy group. It means substituted with a substituent to be.

In addition, unless otherwise defined, "hetero" in the present specification includes 1 to 3 heteroatoms selected from the group consisting of B, N, O, S, P, Si and P(=O) in one ring. It contains the dog, and the rest means that it is carbon.

Then, a method of manufacturing a flexible substrate will be described with reference to FIGS. 1 to 3.

1 to 3 are cross-sectional views illustrating a method of manufacturing a flexible substrate according to an embodiment.

First, as shown in FIG. 1, a support 110 is prepared. The support 110 may be made of a material capable of supporting the flexible substrate, and may be made of, for example, glass, metal, ceramic, or the like, but is not limited thereto.

Subsequently, an auxiliary layer 120 is formed on the support 110.

The auxiliary layer 120 may be formed by applying a solution containing a silicon-containing material and gold (Au) particles. Specifically, the auxiliary layer 120 is a solution process such as spin coating, slit coating, inkjet coating, and spray coating on the support 110. ) Can be formed by applying a solution containing a silicon-containing material and a solution containing gold (Au). Since the silicon-containing material and gold (Au) particles are applied through the above process, the process is simple and cost can be reduced.

In this case, the auxiliary layer 120 may be formed by applying a solution containing a silicon-containing material on the support 110 and then applying a solution containing gold (Au), or a solution containing a silicon-containing material and The auxiliary layer 120 may be formed by simultaneously applying a solution containing gold (Au), or a single solution containing a silicon-containing material and gold (Au) may be applied to form the auxiliary layer 120.

The silicone-containing material may include a monomer, oligomer, or polymer having a thiol group at the terminal. Since the thiol group is a substituent that forms a strong bond with gold (Au), adhesion to gold (Au) particles may be improved by the silicon-containing material including the thiol group. Accordingly, the auxiliary layer 120 can maximize the effect of weakening the adhesion between the polymer thin film 130 and the support 110 and preventing loss due to generation of static electricity.

Specifically, the silicon-containing material may be represented by Formula 1 below, but is not limited thereto.

[Formula 1]

In Formula 1,

L ₁ to L ₄ are each independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 alkoxyylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or non-substituted A ringed C2 to C30 heterocycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof,

R, R'and R" are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C2 to C30 A heteroaryl group, a substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.

More specifically, the silicon-containing material may be represented by Formula 2 below, but is not limited thereto.

[Formula 2]

In Chemical Formula 2,

R is a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted Or an unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof. For example, R is a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C2 to C30 heteroaryl It can be a flag.

The auxiliary layer 120 includes a silicon-containing material so as to adjust adhesion to the support 110 such as glass. That is, the silicon-containing material weakens the adhesive force between the support 110 and the polymer thin film 130, so that it may be easier to remove the support 110 from the polymer thin film 130.

Since the auxiliary layer 120 includes gold (Au) particles, loss due to generation of static electricity can be prevented, and adhesion with the support 110 can be adjusted. That is, since gold (Au) particles have high conductivity, they can absorb static electricity generated when removing the support 110 from the polymer thin film 130, and accordingly, static electricity that may occur when removing the support 110 Can be prevented from being transmitted to the side. In addition, gold (Au) particles weaken the adhesion between the support 110 and the polymer thin film 130, so that it may be easier to remove the support 110 from the polymer thin film 130.

The gold (Au) particles may have a particle diameter of 5 nm to 20 nm, and the gold (Au) particles may be located on the silicon-containing material. When the particle diameter of the gold (Au) particles is within the above range, the adhesion between the gold (Au) particles and the silicon-containing material may be further improved due to the action of the thiol group of the silicon-containing material.

Next, referring to FIG. 2, a polymer thin film 130 is formed on the auxiliary layer 120.

The polymer thin film 130 may be, for example, polyimide, polyethylene terephthalate, polycarbonate, epoxy, polyethylene, polyacrylate, or a combination thereof. Specifically, the polymer thin film 130 may be, for example, polyimide, polycarbonate, polyethylene terephthalate, or a combination thereof. More specifically, the polymer thin film 130 may be, for example, polyimide.

The auxiliary layer 120 or the polymer thin film 130 may be applied using a solution process such as spin coating, slit coating, and inkjet coating. Specifically, the polymer thin film 130 may be spin coated on the auxiliary layer 120.

The polymer thin film 130 may have a thickness of about 1 μm to 10 μm. When the thickness of the polymer thin film 130 is within the above range, flexibility of the flexible substrate and the flexible display device may be improved.

Next, referring to FIG. 3, the support 110 may be removed from the polymer thin film 130. Removal of the support 110 may be performed by a physical method without using a laser. Here, the physical method refers to a method of separating by applying a predetermined force without using a laser or chemical liquid.

Since the step of removing the support 110 performed by the physical method does not use a laser, the support 110 can be removed without generating static electricity.

After removing the support 110, the auxiliary layer 120 may remain on one surface of the polymer thin film 130. Although the gold (Au) particles of the auxiliary layer 120 contain static electricity, the static electricity is blocked by the polymer thin film 130 and does not have other adverse effects.

Hereinafter, a method of manufacturing a flexible substrate will be described with reference to FIGS. 4 to 7.

4 to 7 are cross-sectional views illustrating a method of manufacturing a flexible substrate according to an embodiment.

First, as shown in FIG. 4, an auxiliary layer 120 including a silicon-containing material and gold (Au) particles is formed on the support 110. Thereafter, as shown in FIG. 5, a polymer thin film 130 is formed on the auxiliary layer 120. Thereafter, after forming the element 104 on the polymer thin film 130 as shown in FIG. 6, the support 110 is removed as in FIG. 7 to manufacture a flexible display device.

The silicon-containing material, gold (Au) particles, the polymer thin film 130, and the solution process in the method of manufacturing the flexible display device are the same as described in the method of manufacturing the flexible substrate.

The device 140 may include a thin film transistor, an organic light emitting device, a liquid crystal display device, or a combination thereof. Specifically, the device 140 may include a thin film transistor and an organic light emitting device electrically connected to the thin film transistor. More specifically, by performing a thin film transistor formation process on the polymer thin film 130, the active layer AC including the source region SA, the channel region CA, and the drain region DA, the gate electrode GA, A plurality of thin film transistors TFT including a source electrode SO and a drain electrode DR are formed, and a first electrode E1, an organic emission layer EL, and a second electrode E2 connected to the thin film transistor TFT are formed. After the organic light-emitting device OLED including) is formed, a thin film encapsulation part EN for encapsulating the organic light-emitting device OLED may be formed to form a display part DP for displaying an image.

Each of the first electrode and the second electrode of the organic light emitting device may be an anode and/or a cathode. For example, if the first electrode is an anode, the second electrode may be a cathode, and if the first electrode is a cathode, the second electrode may be an anode.

The anode may be a transparent electrode or an opaque electrode. The transparent electrode is a thin conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), zinc oxide (ZnO), or a combination thereof, or a metal such as aluminum, silver, or magnesium. It may be formed in a thickness, and the opaque electrode may be formed of a metal such as aluminum, silver, or magnesium.

The cathode may include a material having a small work function to facilitate electron injection. For example, metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, lead, cesium, barium, etc. or alloys thereof may be mentioned, and LiF/Al, LiO ₂ / Al, LiF/Ca, LiF/Al, and a multi-layered material such as BaF ₂ /Ca may be mentioned, but the present invention is not limited thereto. Preferably, a metal electrode such as aluminum may be used as the cathode.

As described above, the organic light-emitting device includes an anode and a cathode facing each other, and a light-emitting layer disposed between the anode and the cathode. In addition, a hole transport layer may be further included between the anode and the emission layer, and an electron transport layer may be further included between the cathode and the emission layer. In addition, a hole injection layer may be further included between the anode and the hole transport layer, and an electron injection layer may be further included between the cathode and the electron transport layer.

For example, the organic light emitting device is an anode/hole injection layer/light emitting layer/cathode, anode/hole injection layer/hole transport layer/light emitting layer/electron transport layer/cathode, or anode/hole injection layer/hole transport layer/light emitting layer/electron transport layer/electron injection It can have a layer/cathode structure. Alternatively, the organic light emitting device is a functional layer/light emitting layer/electron transport layer/cathode having an anode/hole injection function and a hole transport function at the same time, or a functional layer/light emitting layer/electron transport layer/electron having both an anode/hole injection function and a hole transport function. It may have an injection layer/cathode structure. Alternatively, the organic light emitting device is an anode/hole transport layer/light emitting layer/functional layer/cathode having simultaneous electron injection and electron transport functions, anode/hole injection layer/light emitting layer/functional layer/cathode simultaneously having electron injection and electron transport functions, or It may have an anode/hole injection layer/hole transport layer/light emitting layer/functional layer/cathode structure having both electron injection and electron transport functions.

The emission layer may include only a single compound or a mixture of the compound and other organic compounds. In the case of mixtures, a greater amount of the compound may act as a fluorescent or phosphorescent host, and a smaller amount of the compound may act as a dopant.

As a known host material, 9,10-di(naphthalen-2-yl)anthracene (ADN) or the like may be used, but is not limited thereto.

PtOEP, Ir(piq) ₃ , Btp ₂ Ir(acac), DCJTB, etc. may be used as known red dopants, but the present invention is not limited thereto.

As a known green dopant, Ir(ppy) ₃ (ppy=phenylpyridine), Ir(ppy) ₂ (acac), Ir(mpyp) ₃ , C545T, etc. may be used, but the present invention is not limited thereto.

As known blue dopants, F ₂ Irpic, (F ₂ ppy) ₂ Ir(tmd), Ir(dfppz) ₃ , ter-fluorene, 4,4'-bis(4-diphenylaminostyryl) Biphenyl (DPAVBi), 2,5,8,11-tetra-ter-butyl perylene (TBP), etc. may be used, but the present invention is not limited thereto.

The content of the dopant may be selected from 0.1 parts by weight to 15 parts by weight based on 100 parts by weight of the light emitting layer forming material (ie, the total weight of the host and the dopant is 100 parts by weight), but is not limited thereto. When the content of the dopant satisfies the above range, concentration quenching can be substantially prevented.

The light-emitting layer may emit white light by a combination of three primary colors such as red, green, and blue. In this case, the color combination may emit white light by combining the colors of neighboring subpixels, or a color stacked in a vertical direction. White light may also be emitted in combination.

The hole transport layer may include a known hole transport material. For example, N-phenylcarbazole, polyvinylcarbazole, 4,4',4''-tris(carbazol-9-yl)-triphenylamine (4,4',4''-Tris(carbazol Carbazole derivatives such as -9-yl)-triphenylamine, TCTA), NPB, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4 An amine derivative having an aromatic condensed ring such as'-diamine (TPD) may be used, but is not limited thereto. In the case of the TCTA, in addition to the hole transporting role, it may also play a role of preventing diffusion of excitons from the emission layer.

The electron transport layer may include a known electron transport material. For example, a known material such as a quinoline derivative, particularly tris(8-quinolinolate)aluminum (Alq ₃ ), TAZ, Balq, etc. may be used, but is not limited thereto.

The hole injection layer may include a known hole injection material, for example, phthalocyanine compounds such as copper phthalocyanine, m-MTDATA[4,4',4"-tris(3-methylphenylphenylamino)triphenylamine], NPB( N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine)), TDATA, 2T-NATA, Pani /DBSA(Polyaniline/Dodecylbenzenesulfonic acid:polyaniline/dodecylbenzenesulfonic acid), PEDOT/PSS(Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate):poly(3,4-ethylenedioxythiophene)/poly( 4-styrenesulfonate)), Pani/CSA (Polyaniline/Camphor sulfonic acid: polyaniline/camphor sulfonic acid) or PANI/PSS (Polyaniline)/Poly(4-styrenesulfonate): polyaniline)/poly(4-styrenesulfonate)), etc. It may include, but is not limited thereto.

The electron injection layer may use any known material as a material for forming an electron injection layer such as LiF, NaCl, CsF, Li ₂ O, BaO, and the like.

The display unit DP may be composed of a plurality of thin film transistors (TFT), an organic light emitting device (OLED), and a thin film encapsulation unit (EN), but is not limited thereto and may be configured in various forms known to those skilled in the display field. have.

Since the step of removing the support 110 does not use a laser, the support 110 can be removed without generating static electricity.

When the laser is irradiated, static electricity is generated between the support 110 and the polymer thin film 130, and this causes a change in the battery characteristics of the thin film transistor on the polymer thin film 130 (Vth moves in the posi direction), It damages the active interface. As a result, a bump is generated and reliability of the display device is degraded, and thus the driving of the display device may not be stable.

However, according to one embodiment or another embodiment, since static electricity is not generated by not irradiating a laser or the like, the above problem does not occur, and it is effective in terms of cost.

In addition, according to one embodiment or another embodiment, by inserting the auxiliary layer 120, it is possible to facilitate the detachment between the support 110 such as glass and the polymer thin film 130.

Specifically, the silicon-containing material and gold (Au) particles of the auxiliary layer 120 weaken the adhesion between the support 110 such as glass and the polymer thin film 130 to enable physical desorption, and the gold (Au) particles Due to its conductivity, it retains static electricity generated when the support 110 is detached from the polymer thin film 130 and thus prevents a reduction loss due to the generation of static electricity.

After removing the support 110, the auxiliary layer 120 may remain on one surface of the polymer thin film 130. Although the gold (Au) particles of the auxiliary layer 120 contain static electricity, the static electricity is blocked by the polymer thin film 130 and does not have any effect on devices located on the other side of the polymer thin film 130.

According to still another embodiment, a flexible substrate manufactured by the method of manufacturing the flexible substrate and a flexible display device manufactured by the method of manufacturing the flexible display device are provided.

The flexible substrate, the flexible display device, and respective components thereof are as described in the method of manufacturing the flexible substrate and the flexible display device.

The present invention will be described in more detail through the following examples. However, the following examples are for illustrative purposes only and do not limit the scope of the present invention.

Flexible Fabrication of the substrate

Manufacturing example One

After applying a silicon-containing material represented by the following formula (3) on a glass by a solution process, gold (Au) particles having a particle diameter of 10 nm are applied by a solution process, heat treated, and dried to form an auxiliary layer. Formed. Thereafter, polyamic acid was coated on the auxiliary layer by spin coating and heat-treated to form a polyimide thin film. The glass was removed by a physical method without laser irradiation to prepare a flexible substrate.

[Formula 3]

Manufacturing example 2

A flexible substrate was manufactured in the same manner as in Preparation Example 1, except that a silicon-containing material represented by the following Chemical Formula 4 was used instead of Chemical Formula 3.

[Formula 4]

compare Manufacturing example One

A flexible substrate was manufactured by performing the same method as in Preparation Example 1, except that the auxiliary layer 120 was not formed.

compare Manufacturing example 2

A flexible substrate was manufactured in the same manner as in Preparation Example 1, except that the auxiliary layer 120 not including the silicon-containing material of Formula 3 was used instead of the auxiliary layer 120 of Preparation Example 1.

compare Manufacturing example 3

A flexible substrate was manufactured in the same manner as in Preparation Example 1, except that the auxiliary layer 120 containing no Au particles was used instead of the auxiliary layer 120 of Preparation Example 1.

Flexible Fabrication of display devices

Example One

A thin film transistor was formed on the flexible substrate of Preparation Example 1, and an organic light-emitting device was formed on the thin film transistor to form a display unit displaying an image. Thereafter, a thin film encapsulation was formed on the display portion, and glass was physically removed from the auxiliary layer without laser irradiation, thereby fabricating a flexible display device.

Example 2

A flexible display device was manufactured in the same manner as in Example 1, except that the flexible substrate of Production Example 2 was used instead of Production Example 1.

Comparative example One

A flexible substrate was carried out in the same manner as in Example 1, except that the flexible substrate of Comparative Production Example 1 was used and the glass was removed from the polyimide layer by irradiating a laser, not a physical method. A display device was manufactured.

Comparative example 2

A flexible display device was manufactured in the same manner as in Example 1, except that the flexible substrate of Comparative Production Example 1 was used instead of Production Example 1.

Comparative example 3

A flexible display device was manufactured in the same manner as in Example 1, except that the flexible substrate of Comparative Preparation Example 2 was used instead of Preparation Example 1.

Comparative example 4

A flexible display device was manufactured in the same manner as in Example 1, except that the flexible substrate of Comparative Production Example 3 was used instead of Production Example 1.

evaluation

In the flexible display devices according to Examples 1, 2, and Comparative Examples 1 to 4, whether glass was removed and whether static electricity was generated when the glass was removed was evaluated.

Whether the glass was removed was evaluated as ○/X.

○: Glass is removed cleanly.

X: Glass is not removed cleanly.

The occurrence of static electricity when removing the glass was evaluated as ○/X.

○: Static electricity is generated.

X: No static electricity is generated.

The results are shown in Table 1 below.

Auxiliary layer How to remove glass Whether to remove glass Whether static electricity is generated when removing glass Example 1 Si polymer material + Au particles Physical way ○ X Example 2 Si polymer material + Au particles Physical way ○ X Comparative Example 1 - Laser irradiation ○ ○ Comparative Example 2 - Physical way X ○ Comparative Example 3 Au particles Physical way X X Comparative Example 4 Si polymer material Physical way ○ ○

Referring to Table 1, the flexible display device according to Examples 1 and 2 including an auxiliary layer including a Si polymer material and Au particles includes Comparative Examples 1 and 2 not including the auxiliary layer, and includes only Au particles. Compared to Comparative Example 3 including an auxiliary layer and Comparative Example 4 including an auxiliary layer including only a Si polymer material, it can be seen that the glass is removed more cleanly and static electricity does not occur, so that the thin film transistor device is not affected.

That is, in the flexible display device according to Examples 1 and 2, the glass can be removed cleanly by including the Si polymer material in the auxiliary layer, and the generation of static electricity can be minimized by including the Au particles. In addition, it is more economical because the glass can be removed by a physical method without using a laser.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention defined in the following claims are also present. It belongs to the scope of the invention.

110: support
120: auxiliary layer
130: polymer thin film
140: element

Claims (24)

Preparing the support,
Forming an auxiliary layer including a silicon-containing material and gold (Au) particles on the support,
Forming a polymer thin film on the auxiliary layer, and
Removing the support
Flexible substrate manufacturing method comprising a.
The method of claim 1,
The silicon-containing material is a flexible substrate manufacturing method comprising a thiol (thiol) group at the terminal.
The method of claim 2,
The silicon-containing material is a method of manufacturing a flexible substrate represented by the following Formula 1:
[Formula 1]

In Formula 1,
L ₁ to L ₄ are each independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 alkoxyylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or non-substituted A ringed C2 to C30 heterocycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof,
R, R'and R" are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C2 to C30 A heteroaryl group, a substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
The method of claim 3,
The silicon-containing material is a method of manufacturing a flexible substrate represented by Formula 2:
[Formula 2]

In Chemical Formula 2,
R is a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted Or an unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
The method of claim 1,
The gold (Au) particle is a flexible substrate manufacturing method having a particle diameter of 5 nm to 20 nm.
The method of claim 1,
The gold (Au) particle is a method of manufacturing a flexible substrate positioned on the silicon-containing material.
The method of claim 1,
The polymer thin film is a method of manufacturing a flexible substrate having a thickness of 1 μm to 10 μm.
The method of claim 1,
The polymer thin film is a method of manufacturing a flexible substrate comprising polyimide, polycarbonate, polyethylene terephthalate, or a combination thereof.
The method of claim 1,
At least one of the step of forming the auxiliary layer and the step of forming the polymer thin film is performed by a solution process.
The method of claim 1,
The step of removing the support is a step of removing the support without using a laser.
Forming an auxiliary layer including a silicon-containing material and gold (Au) particles on the support,
Forming a polymer thin film on the auxiliary layer,
Forming a device on the polymer thin film, and
Removing the support
A method of manufacturing a flexible display device comprising a.
The method of claim 11,
The method of manufacturing a flexible display device in which the silicon-containing material includes a thiol group at an end.
The method of claim 12,
The silicon-containing material is a method of manufacturing a flexible display device represented by Formula 1 below:
[Formula 1]

In Formula 1,
L ₁ to L ₄ are each independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C2 to C30 heterocycloalkylene group, a substituted or It is an unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof,
R, R'and R" are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C1 to C30 alkoxy group, substituted or unsubstituted C6 to C30 aryloxy group, substituted or unsubstituted C2 to C30 A heteroaryl group, a substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
The method of claim 13,
The silicon-containing material is a method of manufacturing a flexible display device represented by Formula 2 below:
[Formula 2]

In Chemical Formula 2,
R is a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, substituted Or an unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
The method of claim 11,
The gold (Au) particle is a method of manufacturing a flexible display device having a particle diameter of 5 nm to 20 nm.
The method of claim 11,
The method of manufacturing a flexible display device in which the Au particles are positioned on the silicon-containing material.
The method of claim 11,
The polymer thin film is a method of manufacturing a flexible display device having a thickness of 1 μm to 10 μm.
The method of claim 11,
The polymer thin film is a method of manufacturing a flexible display device including polyimide, polycarbonate, polyethylene terephthalate, or a combination thereof.
The method of claim 11,
A method of manufacturing a flexible display device in which at least one of forming the auxiliary layer and forming the polymer thin film is performed through a solution process.
The method of claim 11,
The step of removing the support is a step of removing the support without using a laser.
The method of claim 11,
The device is a method of manufacturing a flexible display device including a thin film transistor, an organic light emitting device, a liquid crystal display device, or a combination thereof.
The method of claim 21,
The device is
Thin film transistor and
Organic light-emitting device electrically connected to the thin film transistor
A method of manufacturing a flexible display device comprising a.
A flexible substrate manufactured by the method according to any one of claims 1 to 10.
A flexible display device manufactured by the method according to any one of claims 11 to 22.

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