KR20150010918A - Flexible substrate, method for manufacturing flexible substrate, flexible display device, and method for flexible display device - Google Patents

Abstract

The present invention relates to a method for manufacturing a flexible substrate and the flexible substrate manufactured thereby. The method for manufacturing the flexible substrate includes the steps of: preparing a supporter; forming an auxiliary layer which includes an Au element and a silicon-containing material on the supporter; forming a polymer thin film on the auxiliary layer; and removing the supporter after the polymer thin film is formed.

Description

TECHNICAL FIELD [0001] The present invention relates to a flexible substrate, a method of manufacturing a flexible substrate, a flexible display device, and a method of manufacturing a flexible display device. BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a flexible substrate,

A flexible substrate, a method of manufacturing a flexible substrate, a flexible display, and a method of manufacturing a flexible display.

BACKGROUND ART [0002] A display device is an apparatus for displaying an image. Recently, an organic light emitting diode (OLED) display has attracted attention.

The OLED display has a self-emission characteristic, and unlike a liquid crystal display device, a separate light source is not required, so that the thickness and weight can be reduced. Further, the organic light emitting display device exhibits high-quality characteristics such as low power consumption, high luminance, and high reaction speed.

Generally, a display device such as an organic light emitting display includes a substrate such as a glass substrate and an element located on the substrate.

BACKGROUND ART [0002] In recent years, a technique for fabricating a substrate as a flexible substrate and realizing an entire display device as a flexible display device has been studied.

The flexible substrate can be supported by a support such as a glass substrate due to its flexible characteristics and can be processed, and the flexible substrate can be removed from the support after the process is completed. A laser can be used to detach the flexible substrate from the support, but the laser can cause static electricity to lower the reliability of the display device and can be costly.

One embodiment provides a method of manufacturing a flexible substrate that can detach a support without using a laser.

Another embodiment provides a method of manufacturing a flexible display device capable of attaching and detaching a flexible substrate and a support without using a laser.

Another embodiment provides a flexible substrate and a display device according to the above manufacturing method.

According to one embodiment, there is provided a method of forming a thin film, comprising: preparing a support; forming an auxiliary layer comprising a silicon-containing material and gold (Au) particles on the support; forming a polymer thin film on the auxiliary layer; And then removing the support. The present invention also provides a method of manufacturing a flexible substrate.

The silicon-containing material may comprise a thiol group at the terminal.

The silicon-containing material may be represented by the following formula (1).

[Chemical Formula 1]

In Formula 1,

L ₁ to L ₄ each independently represents a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 alkoxysylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, A substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof, wherein the substituted or unsubstituted C2 to C30 heterocycloalkylene group,

R, R 'and R "are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, A substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, A substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.

The silicon-containing material may be represented by the following formula (2).

(2)

In Formula 2,

R represents a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, Or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.

The gold (Au) particles may have a particle diameter of 5 nm to 20 nm.

The gold (Au) particles may be located on the silicon-containing material.

The polymer thin film may have a thickness of 1 占 퐉 to 10 占 퐉.

The polymer thin film may include polyimide, polycarbonate, polyethylene terephthalate or a combination thereof.

At least one of the step of forming the auxiliary layer and the step of forming the polymer thin film may be performed by a solution process.

The step of removing the support may be a step of removing the support without using a laser.

According to another embodiment, there is provided a method of manufacturing a thin film transistor comprising the steps of forming a support layer comprising a silicon-containing material and gold (Au) particles on a support, forming a polymer thin film on the support layer, The method comprising the steps of:

The device may include a thin film transistor, an organic light emitting device, a liquid crystal display device, or a combination thereof.

The device may include a thin film transistor and an organic light emitting device electrically connected to the thin film transistor.

According to another embodiment, there is provided a flexible substrate and a flexible display device manufactured by the above method.

The support can be removed from the flexible substrate without using a laser, thereby preventing defects of the display device due to the generation of static electricity and reducing the cost.

1 to 3 are cross-sectional views illustrating a method of manufacturing a flexible substrate according to an embodiment.
4 to 7 are cross-sectional views illustrating a method of manufacturing a flexible display device according to another embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. Whenever a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case where it is "directly on" another portion, but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

Also, throughout the specification, when an element is referred to as "including" an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. Also, throughout the specification, the term "on " means to be located above or below a target portion, and does not necessarily mean that the target portion is located on the image side with respect to the gravitational direction.

In the present specification, the term "substituted" or "substituted" means that at least one hydrogen atom is replaced by at least one hydrogen atom, a C1 to C30 alkyl group, a C6 to C36 aryl group, a C2 to C30 heteroaryl group, C30 aryloxy group, C3 to C40 silyloxy group, C1 to C30 acyl group, C2 to C30 acyloxy group, C2 to C30 heteroaryloxy group, C1 to C30 sulfonyl group, C1 to C30 alkoxy group, C2 to C30 alkenyl group, C6 to C30 aryloxy group, from C1 to C30 alkylthiol, C6 to C30 aryl thiol groups, C1 to C30 heterocycloalkyl thiol group, C1 to C30 phosphoric acid amide group, C3 to C40 silyl group, NR ₁ R ₂ (where, R ₁ and R ₂ are each A halogen atom, a cyano group, a nitro group, an azo group, a fluorene group, and a hydroxy group, which is independently a substituent selected from the group consisting of a hydrogen atom, a C1 to C30 alkyl group, and a C6 to C30 aryl group; ≪ / RTI > It means.

In the present specification, the term "hetero" means a heteroatom selected from the group consisting of B, N, O, S, P, Si and P (= O) And the remainder is carbon.

The flexible substrate manufacturing method will be described with reference to FIGS. 1 to 3. FIG.

1 to 3 are cross-sectional views illustrating a method of manufacturing a flexible substrate according to an embodiment.

First, as shown in Fig. 1, a support 110 is prepared. The support 110 may be made of a material capable of supporting a flexible substrate and may be made of, for example, glass, metal, ceramic, or the like, but is not limited thereto.

Subsequently, an auxiliary layer 120 is formed on the support 110.

The auxiliary layer 120 can be formed by applying a solution containing a silicon-containing material and gold (Au) particles. Specifically, the auxiliary layer 120 may be formed on the support 110 by a solution process such as spin coating, slit coating, inkjet coating, spray coating, ) Containing a silicon-containing material and a solution containing gold (Au). Since the silicon-containing material and the gold (Au) particles are applied through the above process, the process is simple and the cost can be reduced.

At this time, a solution containing a silicon-containing material may be applied on the support 110 and then a solution containing gold (Au) may be applied to form an auxiliary layer 120, or a solution containing a silicon- A solution containing gold (Au) may be applied simultaneously to form the auxiliary layer 120, or a single solution containing a silicon-containing material and gold (Au) may be applied to form the auxiliary layer 120.

The silicon-containing material may include a monomer, an oligomer or a polymer having a thiol group at a terminal. Since the thiol group is a substituent which forms a strong bond with gold (Au), the adhesion of the silicon-containing material to gold (Au) particles can be improved by including the thiol group. Accordingly, the auxiliary layer 120 can maximize the effect of preventing the adhesion between the polymer thin film 130 and the support 110 and preventing the loss due to the generation of static electricity.

Specifically, the silicon-containing material may be represented by the following formula (1), but is not limited thereto.

[Chemical Formula 1]

In Formula 1,

L ₁ to L ₄ each independently represents a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 alkoxysylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, A substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof, wherein the substituted or unsubstituted C2 to C30 heterocycloalkylene group,

R, R 'and R "are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, A substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, A substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.

More specifically, the silicon-containing material may be represented by the following general formula (2), but is not limited thereto.

(2)

In Formula 2,

R represents a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, Or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof. For example, R is a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C2 to C30 heteroaryl .

The auxiliary layer 120 may contain a silicon-containing material to control the adhesion of the glass or the like to the support 110. That is, the silicon-containing material may weaken the adhesive force between the support 110 and the polymer thin film 130, thereby making it easier to remove the support 110 from the polymer thin film 130.

The auxiliary layer 120 includes gold (Au) particles to prevent the loss due to the generation of static electricity and to adjust the adhesion with the support 110. That is, since the gold (Au) particles have high conductivity, static electricity generated when the support 110 is removed from the polymer thin film 130 can be absorbed, and thus static electricity, which may be generated when the support 110 is removed, It can be prevented from being transmitted to the side. In addition, the gold (Au) particles may weaken the adhesion between the support 110 and the polymer thin film 130, so that it is easier to remove the support 110 from the polymer thin film 130.

The gold (Au) particles may have a particle size of 5 nm to 20 nm, and the gold (Au) particles may be located on the silicon-containing material. When the diameter of the gold (Au) particles is within the above range, the adhesion between the gold (Au) particles and the silicon-containing material can be further improved by the action of the thiol group of the silicon-containing material.

Next, referring to FIG. 2, a polymer thin film 130 is formed on the auxiliary layer 120.

The polymer thin film 130 may be, for example, polyimide, polyethylene terephthalate, polycarbonate, epoxy, polyethylene, polyacrylate, or a combination thereof. Specifically, the polymer thin film 130 may be, for example, polyimide, polycarbonate, polyethylene terephthalate, or a combination thereof. More specifically, the polymer thin film 130 may be polyimide, for example.

The auxiliary layer 120 or the polymer thin film 130 may be applied using a solution process such as spin coating, slit coating, inkjet coating, or the like. Specifically, the polymer thin film 130 may be spin-coated on the auxiliary layer 120.

The polymer thin film 130 may have a thickness of about 1 占 퐉 to 10 占 퐉. When the thickness of the polymer thin film 130 is within the above range, the flexibility of the flexible substrate and the flexible display device can be improved.

Next, referring to FIG. 3, the support 110 may be removed from the polymer thin film 130. Removal of the support 110 may be performed by a physical method without using a laser. Here, the physical method refers to a method of separating by applying a predetermined force without using a laser or chemical liquid.

Since the step of removing the support 110 performed by the physical method does not use a laser, the support 110 can be removed without generating static electricity.

After the support 110 is removed, the auxiliary layer 120 may remain on one surface of the polymer thin film 130. The Au particles of the auxiliary layer 120 are faded by static electricity but the static electricity is blocked by the polymer thin film 130 and does not have any other adverse effect.

Hereinafter, a method of manufacturing a flexible substrate will be described with reference to FIGS. 4 to 7. FIG.

4 to 7 are cross-sectional views illustrating a method of manufacturing a flexible substrate according to an embodiment.

First, as shown in FIG. 4, an auxiliary layer 120 including a silicon-containing material and gold (Au) particles is formed on a support 110. Thereafter, the polymer thin film 130 is formed on the auxiliary layer 120 as shown in FIG. Subsequently, the device 104 is formed on the polymer thin film 130 as shown in FIG. 6, and then the support 110 is removed as shown in FIG. 7 to manufacture a flexible display device.

The silicon-containing material, gold (Au) particles, the polymer thin film 130, the solution process, and the like in the manufacturing method of the flexible display device are as described in the flexible substrate manufacturing method.

The device 140 may include a thin film transistor, an organic light emitting device, a liquid crystal display device, or a combination thereof. In detail, the device 140 may include a thin film transistor, and an organic light emitting device electrically connected to the thin film transistor. More specifically, the thin film transistor forming process is performed on the polymer thin film 130 to form the active layer AC including the source region SA, the channel region CA and the drain region DA, the gate electrode GA, A plurality of thin film transistors TFT including a source electrode SO and a drain electrode DR are formed and a first electrode E1 connected to a thin film transistor TFT, an organic light emitting layer EL, a second electrode E2 The organic light emitting device OLED including the organic light emitting device OLED may be formed and then a thin film encapsulation unit EN may be formed to encapsulate the organic light emitting device OLED to form a display unit DP for displaying an image.

The first electrode and the second electrode of the organic light emitting diode may be an anode and / or a cathode, respectively. For example, if the first electrode is an anode, the second electrode may be a cathode, and if the first electrode is a cathode, the second electrode may be an anode.

The anode may be a transparent electrode or an opaque electrode. The transparent electrode may be formed of a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO ₂ ), zinc oxide (ZnO), or a combination thereof or a metal such as aluminum, silver, And the opaque electrode may be formed of a metal such as aluminum, silver, or magnesium.

The cathode may include a material having a low work function to facilitate electron injection. For example, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, there may be mentioned a metal or an alloy such as lead, cesium, barium, LiF / Al, LiO ₂ / Al, LiF / Ca, LiF / Al, and BaF ₂ / Ca, but the present invention is not limited thereto. Preferably, a metal electrode such as aluminum may be used for the cathode.

As described above, the organic light emitting device includes an anode and a cathode facing each other, and a light emitting layer positioned between the anode and the cathode. Further, a hole transporting layer may be further included between the anode and the light emitting layer, and an electron transporting layer may be further included between the cathode and the light emitting layer. Further, a hole injecting layer may be further included between the anode and the hole transporting layer, and an electron injecting layer may further be disposed between the cathode and the electron transporting layer.

For example, the organic light emitting device may include an anode, a hole injecting layer, a light emitting layer, a cathode, an anode, a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, a cathode, or an anode / a hole injecting layer / a hole transporting layer / Layer / cathode structure. Alternatively, the organic light emitting device may include a functional layer / a light emitting layer / an electron transporting layer / cathode having an anode / hole injecting function and a hole transporting function, or a functional layer / a light emitting layer / an electron transporting layer / an electron transporting layer having an anode / Lt; RTI ID = 0.0 > layer / cathode structure. Alternatively, the organic light emitting device may include a functional layer / cathode having an anode / a hole transporting layer / a light emitting layer / an electron injecting and electron transporting function, an anode / a hole injecting layer / a light emitting layer / Anode / hole injection layer / hole transporting layer / light emitting layer / functional layer / cathode structure having both electron injection and electron transporting functions.

The light emitting layer may contain only a single compound or a mixture of a compound and another organic compound. In the case of a mixture, a larger amount of the compound can act as a fluorescent or phosphorescent host, and a smaller amount of the compound can act as a dopant.

As a known host material, 9,10-di (naphthalene-2-yl) anthracene (ADN) or the like can be used, but the present invention is not limited thereto.

As the known red dopant, PtOEP, Ir (piq) ₃ , Btp ₂ Ir (acac), DCJTB, and the like can be used, but the present invention is not limited thereto.

Ir (ppy) ₃ (ppy = phenylpyridine), Ir (ppy) ₂ (acac), Ir (mpyp) ₃ and C545T may be used as the known green dopant.

As known blue dopants, F ₂ Irpic, (F ₂ ppy) ₂ Ir (tmd), Ir (dfppz) ₃ , ter-fluorene, 4,4'-bis (4-diphenylaminostyryl) Biphenyl (DPAVBi), 2,5,8,11-tetra-tert-butyl perylene (TBP), and the like.

The content of the dopant may be selected from the range of 0.1 to 15 parts by weight based on 100 parts by weight of the light emitting layer forming material (that is, the total weight of the host and the dopant is 100 parts by weight), but is not limited thereto. When the content of the dopant satisfies the above range, the concentration quenching phenomenon can be substantially prevented.

The light emitting layer may emit white light by a combination of basic colors such as red, green, and blue. In this case, a combination of colors may emit white light by combining colors of neighboring sub-pixels, May be combined to emit white light.

The hole transporting layer may include a known hole transporting material. (4,4 ', 4 " -tris (carbazole), 4 ', 4 ' -tris -9-yl) -triphenylamine (TCTA)), a carbazole derivative such as NPB, N, N'-bis (3-methylphenyl) -N, N'- '- diamine (TPD), and the like can be used, but the present invention is not limited thereto. In the case of the TCTA, besides the hole transporting role, it can also prevent the excitons from diffusing from the light emitting layer.

The electron transporting layer may include a known electron transporting material. For example, known materials such as quinoline derivatives, especially tris (8-quinolinolate) aluminum (Alq ₃ ), TAZ, Balq and the like may be used, but the present invention is not limited thereto.

The hole injecting layer may include a known hole injecting material such as a phthalocyanine compound such as copper phthalocyanine, m-MTDATA [4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine], NPB N'-di (1-naphthyl) -N, N'-diphenylbenzidine), TDATA, 2T-NATA, Pani / DBSA (polyaniline / dodecylbenzenesulfonic acid), PEDOT / PSS (poly (3,4-ethylenedioxythiophene) / poly (4-styrenesulfonate) Styrene sulfonate), poly (4-styrenesulfonate), poly (4-styrenesulfonate)), Pani / CSA (polyaniline / camphor sulfonic acid / polyaniline / camphorsulfonic acid) or PANI / PSS But is not limited thereto.

The electron injection layer may be any material known as an electron injection layer forming material such as LiF, NaCl, CsF, Li ₂ O, BaO, or the like.

The display unit DP may include a plurality of thin film transistors (TFTs), an organic light emitting diode (OLED), and a thin film encapsulation unit EN. However, the display unit DP may be formed in various forms have.

Since the step of removing the support 110 does not use a laser, the support 110 can be removed without generating static electricity or the like.

Static electricity is generated between the support 110 and the polymer thin film 130. This causes the thin film transistor on the polymer thin film 130 to change in battery characteristics (Vth moves in the posi direction) Causing damage to the active interface. As a result, the occurrence of hump and the reliability of the display device may be deteriorated, and the display device may not be driven stably.

However, according to one embodiment or another embodiment, static electricity is not generated by not irradiating a laser or the like, so that the above-mentioned problem does not occur and it is effective in cost.

In addition, according to one embodiment or another embodiment, insertion of the auxiliary layer 120 makes it easier to attach and detach between the support 110 and the polymer thin film 130, such as glass.

Specifically, the silicon-containing material and the gold (Au) particles of the auxiliary layer 120 weaken the adhesive force between the support 110 and the polymer thin film 130 such as glass to enable physical desorption, It is possible to prevent static electricity from being generated when the support body 110 is detached from the polymer thin film 130 due to conductivity and to prevent loss caused by generation of static electricity.

After the support 110 is removed, the auxiliary layer 120 may remain on one surface of the polymer thin film 130. The Au particles of the auxiliary layer 120 are faded by static electricity but static electricity is blocked by the polymer thin film 130 and has no influence on the element located on the other side of the polymer thin film 130. [

According to another embodiment, there is provided a flexible substrate manufactured by the method for manufacturing a flexible substrate and a flexible display device manufactured by the method for manufacturing the flexible display device.

The flexible substrate, the flexible display device, and the respective components are the same as those described in the flexible substrate and the flexible display device manufacturing method.

Hereinafter, the present invention will be described in more detail with reference to examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

Flexible  Fabrication of substrate

Manufacturing example  One

A silicon-containing material represented by the following Chemical Formula 3 is applied on a glass by a solution process, then gold (Au) particles having a particle diameter of 10 nm are coated by a solution process and then heat-treated, . Thereafter, polyamic acid was coated on the auxiliary layer by spin coating and heat treatment was performed to form a polyimide thin film. The glass was removed by a physical method without laser irradiation to produce a flexible substrate.

(3)

Manufacturing example  2

A flexible substrate was prepared in the same manner as in Preparation Example 1, except that the silicon-containing material represented by the following Chemical Formula 4 was used instead of the Chemical Formula 3.

[Chemical Formula 4]

compare Manufacturing example  One

Except that the auxiliary layer 120 was not formed, to prepare a flexible substrate.

compare Manufacturing example  2

A flexible substrate was prepared in the same manner as in Preparation Example 1 except that the auxiliary layer 120 not containing the silicon-containing material of Formula 3 was used in place of the auxiliary layer 120 of Production Example 1.

compare Manufacturing example  3

Except that the auxiliary layer 120 not containing Au particles was used in place of the auxiliary layer 120 of Production Example 1, a flexible substrate was manufactured.

Flexible  Manufacture of display devices

Example  One

A thin film transistor was formed on the flexible substrate of Production Example 1, and an organic light emitting element was formed on the thin film transistor to form a display unit for displaying an image. Thereafter, a thin film encapsulation was formed on the display portion, and glass was physically removed from the auxiliary layer without laser irradiation to produce a flexible display device.

Example  2

A flexible display device was manufactured in the same manner as in Example 1 except that the flexible substrate of Production Example 2 was used instead of Production Example 1.

Comparative Example  One

Except that the flexible substrate of Comparative Production Example 1 was used instead of Production Example 1 and glass was removed from the polyimide layer by laser irradiation instead of the physical method, A display device was manufactured.

Comparative Example  2

A flexible display device was manufactured in the same manner as in Example 1 except that the flexible substrate of Comparative Production Example 1 was used instead of Production Example 1.

Comparative Example  3

A flexible display device was manufactured in the same manner as in Example 1 except that the flexible substrate of Comparative Production Example 2 was used instead of Production Example 1.

Comparative Example  4

A flexible display device was manufactured in the same manner as in Example 1 except that the flexible substrate of Comparative Production Example 3 was used instead of Production Example 1.

evaluation

Whether or not the glass was removed from the flexible display device according to Example 1, Example 2, and Comparative Examples 1 to 4 and whether or not static electricity was generated when the glass was removed was evaluated.

The glass removal was evaluated as? / X.

○: The glass was cleanly removed.

X: The glass is not removed cleanly.

When the glass was removed, the generation of static electricity was evaluated as? / X.

○: Static electricity is generated.

X: No static electricity is generated.

The results are shown in Table 1 below.

Auxiliary layer How to remove glass Whether the glass is removed Static electricity generated when glass is removed Example 1 Si polymer material + Au particle Physical method ○ X Example 2 Si polymer material + Au particle Physical method ○ X Comparative Example 1 - Laser irradiation ○ ○ Comparative Example 2 - Physical method X ○ Comparative Example 3 Au particles Physical method X X Comparative Example 4 Si polymer material Physical method ○ ○

Referring to Table 1, the flexible display device according to Examples 1 and 2 including the auxiliary layer including the Si polymer material and the Au particles includes Comparative Examples 1 and 2 not including the auxiliary layer, It can be confirmed that the glass is cleanly removed and the static electricity is not generated and the thin film transistor device is not affected as compared with Comparative Example 3 including the auxiliary layer and Comparative Example 4 including the auxiliary layer containing only the Si polymer material.

That is, the flexible display device according to Embodiments 1 and 2 can cleanly remove the glass by including the Si polymer material in the auxiliary layer, and the generation of static electricity can be minimized by including Au particles. Further, the glass can be removed by a physical method without using a laser, which is more economical.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And falls within the scope of the invention.

110: Support
120: auxiliary layer
130: polymer thin film
140: Element

Claims (24)

Preparing a support,
Forming an auxiliary layer comprising a silicon-containing material and gold (Au) particles on the support,
Forming a thin polymer film on the auxiliary layer, and
Removing the support
And a second substrate.
The method according to claim 1,
Wherein the silicon-containing material comprises a thiol group at the terminal.
3. The method of claim 2,
Wherein the silicon-containing material is represented by the following Formula 1:
[Chemical Formula 1]

In Formula 1,
L ₁ to L ₄ each independently represents a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C1 to C30 alkoxysylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, A substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof, wherein the substituted or unsubstituted C2 to C30 heterocycloalkylene group,
R, R 'and R "are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, A substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, A substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
The method of claim 3,
Wherein the silicon-containing material is represented by the following formula (2): < EMI ID =
(2)

In Formula 2,
R represents a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, Or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
The method according to claim 1,
Wherein the gold (Au) particles have a particle diameter of 5 nm to 20 nm.
The method according to claim 1,
Wherein the gold (Au) particles are located on the silicon-containing material.
The method according to claim 1,
Wherein the polymer thin film has a thickness of 1 占 퐉 to 10 占 퐉.
The method according to claim 1,
Wherein the polymer thin film comprises polyimide, polycarbonate, polyethylene terephthalate or a combination thereof.
The method according to claim 1,
Wherein at least one of the step of forming the auxiliary layer and the step of forming the polymer thin film is performed by a solution process.
The method according to claim 1,
Wherein the step of removing the support is a step of removing the support without using a laser.
Forming an auxiliary layer comprising a silicon-containing material and gold (Au) particles on a support,
Forming a polymer thin film on the auxiliary layer,
Forming an element on the polymer thin film, and
Removing the support
Wherein the flexible display device is a flexible display device.
12. The method of claim 11,
Wherein the silicon-containing material comprises a thiol group at the terminal.
13. The method of claim 12,
Wherein the silicon-containing material is represented by the following Formula 1:
[Chemical Formula 1]

In Formula 1,
L ₁ to L ₄ each independently represents a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C2 to C30 heterocycloalkylene group, An unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C2 to C30 heteroarylene group, or a combination thereof,
R, R 'and R "are each independently a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, A substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 aryl group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, A substituted or unsubstituted C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
14. The method of claim 13,
Wherein the silicon-containing material is represented by the following Formula 2:
(2)

In Formula 2,
R represents a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 haloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, Or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C2 to C30 heteroaryl group, A C6 to C30 arylthiol group, a substituted or unsubstituted amino group, a substituted or unsubstituted silyl group, or a combination thereof.
12. The method of claim 11,
Wherein the gold (Au) particles have a particle diameter of 5 nm to 20 nm.
12. The method of claim 11,
Wherein the Au particles are positioned on the silicon-containing material.
12. The method of claim 11,
Wherein the polymer thin film has a thickness of 1 占 퐉 to 10 占 퐉.
12. The method of claim 11,
Wherein the polymer thin film comprises polyimide, polycarbonate, polyethylene terephthalate, or a combination thereof.
12. The method of claim 11,
Wherein at least one of the step of forming the auxiliary layer and the step of forming the polymer thin film is performed by a solution process.
12. The method of claim 11,
Wherein the step of removing the support is a step of removing the support without using a laser.
12. The method of claim 11,
Wherein the device comprises a thin film transistor, an organic light emitting device, a liquid crystal display device, or a combination thereof.
22. The method of claim 21,
The device
Thin film transistors and
An organic light emitting element electrically connected to the thin film transistor
Wherein the flexible display device is a flexible display device.
A flexible substrate produced by the method of any one of claims 1 to 10.
A flexible display device manufactured by the method according to any one of claims 11 to 22.

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