KR102172298B1 - Epoxy resin composite and printed curcuit board comprising insulating layer using the same - Google Patents

Epoxy resin composite and printed curcuit board comprising insulating layer using the same Download PDF

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KR102172298B1
KR102172298B1 KR1020140031226A KR20140031226A KR102172298B1 KR 102172298 B1 KR102172298 B1 KR 102172298B1 KR 1020140031226 A KR1020140031226 A KR 1020140031226A KR 20140031226 A KR20140031226 A KR 20140031226A KR 102172298 B1 KR102172298 B1 KR 102172298B1
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epoxy resin
resin composition
silicon carbide
epoxy compound
insulating layer
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KR20150108250A (en
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윤성진
구진아
길건영
박재만
정희영
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엘지이노텍 주식회사
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/44Amides
    • C08G59/444Sulfonamides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/02Ingredients treated with inorganic substances
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0326Organic insulating material consisting of one material containing O
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2227Oxides; Hydroxides of metals of aluminium
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2262Oxides; Hydroxides of metals of manganese

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

본 발명의 한 실시예에 따른 에폭시 수지 조성물은 에폭시 화합물 3 내지 60wt%, 경화제 0.5 내지 5wt%, 산화알루미늄 0 내지 30wt%, 탄화규소 0 내지 30wt%, 그리고 MnO2로 코팅된 탄소계 필러 30 내지 90wt%를 포함한다.The epoxy resin composition according to an embodiment of the present invention includes 3 to 60 wt% of an epoxy compound, 0.5 to 5 wt% of a curing agent, 0 to 30 wt% of aluminum oxide, 0 to 30 wt% of silicon carbide, and 30 to 30 to a carbon-based filler coated with MnO 2 It contains 90wt%.

Description

에폭시 수지 조성물 및 이를 이용한 절연층을 포함하는 인쇄회로기판{EPOXY RESIN COMPOSITE AND PRINTED CURCUIT BOARD COMPRISING INSULATING LAYER USING THE SAME}A printed circuit board including an epoxy resin composition and an insulating layer using the same TECHNICAL FIELD [EPOXY RESIN COMPOSITE AND PRINTED CURCUIT BOARD COMPRISING INSULATING LAYER USING THE SAME}

본 발명은 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 에폭시 수지 조성물 및 이를 이용한 절연층을 포함하는 인쇄회로기판에 관한 것이다.The present invention relates to an epoxy resin composition, and more particularly to a printed circuit board including an epoxy resin composition and an insulating layer using the same.

인쇄회로기판은 절연층 상에 형성된 회로 패턴을 포함하며, 인쇄회로기판 상에는 다양한 전자 부품이 탑재될 수 있다.The printed circuit board includes a circuit pattern formed on the insulating layer, and various electronic components may be mounted on the printed circuit board.

인쇄회로기판 상에 탑재되는 전자 부품은, 예를 들면 발열 소자일 수 있다. 발열 소자가 방출하는 열은 인쇄회로기판의 성능을 떨어뜨릴 수 있다.The electronic component mounted on the printed circuit board may be, for example, a heating element. The heat emitted by the heating element may degrade the performance of the printed circuit board.

전자 부품의 고집적화 및 고용량화에 따라, 인쇄회로기판의 방열 문제에 대한 관심이 더욱 커지고 있다. 일반적으로 인쇄회로기판의 절연층을 위하여 비스페놀 A 형 에폭시 화합물 또는 비스페놀 F 형 에폭시 화합물을 포함하는 에폭시 수지 조성물이 사용되고 있다. 그러나, 비스페놀 A 형 에폭시 화합물 또는 비스페놀 F형 에폭시 화합물은 점도가 낮아 경화성, 기계적 강도, 인성(靭性) 등이 부족한 문제가 있다.As electronic components become highly integrated and have higher capacity, interest in the heat dissipation problem of a printed circuit board is increasing. In general, an epoxy resin composition containing a bisphenol A type epoxy compound or a bisphenol F type epoxy compound is used for the insulating layer of a printed circuit board. However, the bisphenol A type epoxy compound or the bisphenol F type epoxy compound has a problem in that the viscosity is low and the curability, mechanical strength, toughness, and the like are insufficient.

이에 따라, 메조겐 구조를 포함하는 결정성 에폭시 화합물을 포함하는 에폭시 수지 조성물이 사용될 수 있다. 이러한 에폭시 수지 조성물은 경화 전 보존 안정성 및 경화성 등은 우수하지만, 요구되는 수준의 내열성 및 열전도성을 얻는 데 한계가 있다.Accordingly, an epoxy resin composition including a crystalline epoxy compound having a mesogenic structure may be used. Such an epoxy resin composition is excellent in storage stability and curability before curing, but there is a limit to obtaining the required level of heat resistance and thermal conductivity.

본 발명이 이루고자 하는 기술적 과제는 에폭시 수지 조성물 및 이를 이용한 절연층을 포함하는 인쇄회로기판을 제공하는 것이다.The technical problem to be achieved by the present invention is to provide a printed circuit board including an epoxy resin composition and an insulating layer using the same.

본 발명의 한 실시예에 따른 에폭시 수지 조성물은 에폭시 화합물 3 내지 60wt%, 경화제 0.5 내지 5wt%, 산화알루미늄 0 내지 30wt%, 탄화규소 0 내지 30wt%, 그리고 MnO2로 코팅된 탄소계 필러 30 내지 90wt%를 포함한다.The epoxy resin composition according to an embodiment of the present invention includes 3 to 60 wt% of an epoxy compound, 0.5 to 5 wt% of a curing agent, 0 to 30 wt% of aluminum oxide, 0 to 30 wt% of silicon carbide, and 30 to 30 to a carbon-based filler coated with MnO 2 It contains 90wt%.

상기 에폭시 화합물은 결정성 에폭시 화합물 10 중량부에 대하여 비결정성 에폭시 화합물 3 내지 40 중량부를 포함할 수 있다.The epoxy compound may include 3 to 40 parts by weight of an amorphous epoxy compound based on 10 parts by weight of the crystalline epoxy compound.

상기 결정성 에폭시 화합물은 메조겐 구조를 포함할 수 있다.The crystalline epoxy compound may include a mesogen structure.

상기 경화제는 디아미노디페닐술폰을 포함할 수 있다.The curing agent may include diaminodiphenylsulfone.

상기 탄소계 필러는 탄화규소, 탄소나노튜브, 그라파이트 및 탄소섬유 중 적어도 하나를 포함할 수 있다.The carbon-based filler may include at least one of silicon carbide, carbon nanotubes, graphite, and carbon fibers.

상기 에폭시 수지 조성물은 상기 산화알루미늄 5 내지 25wt%, 상기 탄화규소 5 내지 25wt%, 상기 MnO2로 코팅된 탄소계 필러 40 내지 80wt%를 포함할 수 있다.The epoxy resin composition may include 5 to 25 wt% of the aluminum oxide, 5 to 25 wt% of the silicon carbide, and 40 to 80 wt% of the carbon-based filler coated with MnO 2 .

상기 에폭시 수지 조성물은 상기 산화알루미늄 10 내지 20wt%, 상기 탄화규소 10 내지 20wt%, 상기 MnO2로 코팅된 탄소계 필러 50 내지 70wt%를 포함할 수 있다.The epoxy resin composition may include 10 to 20wt% of the aluminum oxide, 10 to 20wt% of the silicon carbide, and 50 to 70wt% of the carbon-based filler coated with MnO 2 .

본 발명의 한 실시예에 따른 인쇄회로기판은 금속 플레이트, 상기 금속 플레이트 상에 형성되는 절연층, 그리고 상기 절연층 상에 형성되는 회로패턴을 포함하며, 상기 절연층은 에폭시 화합물 3 내지 60wt%, 경화제 0.5 내지 5wt%, 산화알루미늄 0 내지 30wt%, 탄화규소 0 내지 30wt%, 그리고 MnO2로 코팅된 탄소계 필러 30 내지 90wt%를 포함하는 에폭시 수지 조성물을 포함한다.A printed circuit board according to an embodiment of the present invention includes a metal plate, an insulating layer formed on the metal plate, and a circuit pattern formed on the insulating layer, wherein the insulating layer is 3 to 60 wt% of an epoxy compound, An epoxy resin composition comprising 0.5 to 5 wt% of a curing agent, 0 to 30 wt% of aluminum oxide, 0 to 30 wt% of silicon carbide, and 30 to 90 wt% of a carbon-based filler coated with MnO 2 .

본 발명의 실시예에 따르면, 열전도성 및 내전압이 우수한 에폭시 수지 조성물을 얻을 수 있다. 이를 이용하여 내열성 및 열전도성이 높은 절연 소재를 얻을 수 있으며, 인쇄회로기판의 방열 성능 및 신뢰도를 높일 수 있다.According to an embodiment of the present invention, it is possible to obtain an epoxy resin composition excellent in thermal conductivity and withstand voltage. By using this, an insulating material having high heat resistance and thermal conductivity can be obtained, and heat dissipation performance and reliability of a printed circuit board can be improved.

도 1 내지 4는 본 발명의 한 실시예에 따른 에폭시 수지 조성물에 포함되는 MnO2가 코팅된 탄소계 필러의 SEM(Scanning Electron Microscope) 이미지이다.
도 5는 본 발명의 한 실시예에 따른 인쇄회로기판의 단면도이다.
1 to 4 are SEM (Scanning Electron Microscope) images of a carbon-based filler coated with MnO 2 contained in an epoxy resin composition according to an embodiment of the present invention.
5 is a cross-sectional view of a printed circuit board according to an embodiment of the present invention.

본 발명은 다양한 변경을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. The present invention is intended to illustrate and describe specific embodiments in the drawings, as various changes may be made and various embodiments may be provided. However, this is not intended to limit the present invention to a specific embodiment, it is to be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.

제2, 제1 등과 같이 서수를 포함하는 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 상기 구성요소들은 상기 용어들에 의해 한정되지는 않는다. 상기 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다. 예를 들어, 본 발명의 권리 범위를 벗어나지 않으면서 제2 구성요소는 제1 구성요소로 명명될 수 있고, 유사하게 제1 구성요소도 제2 구성요소로 명명될 수 있다. 및/또는 이라는 용어는 복수의 관련된 기재된 항목들의 조합 또는 복수의 관련된 기재된 항목들 중의 어느 항목을 포함한다. Terms including ordinal numbers, such as second and first, may be used to describe various elements, but the elements are not limited by the terms. These terms are used only for the purpose of distinguishing one component from another component. For example, without departing from the scope of the present invention, a second component may be referred to as a first component, and similarly, a first component may be referred to as a second component. The term and/or includes a combination of a plurality of related listed items or any of a plurality of related listed items.

본 출원에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof, does not preclude in advance.

다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥 상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms as defined in a commonly used dictionary should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and should not be interpreted as an ideal or excessively formal meaning unless explicitly defined in this application. Does not.

층, 막, 영역, 판 등의 부분이 다른 부분 "위에" 있다고 할 때, 이는 다른 부분 "바로 위에" 있는 경우 뿐만 아니라 그 중간에 또 다른 부분이 있는 경우도 포함한다. 반대로 어떤 부분이 다른 부분 "바로 위에" 있다고 할 때에는 중간에 다른 부분이 없는 것을 뜻한다.When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the case where the other part is "directly above", but also the case where there is another part in the middle. Conversely, when one part is "right above" another part, it means that there is no other part in the middle.

이하, 첨부된 도면을 참조하여 실시예를 상세히 설명하되, 도면 부호에 관계없이 동일하거나 대응하는 구성 요소는 동일한 참조 번호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다.Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, but the same reference numerals are assigned to the same or corresponding components regardless of the reference numerals, and redundant descriptions thereof will be omitted.

본 명세서에서 wt%는 중량부로 대체될 수 있다.In the present specification, wt% may be replaced by parts by weight.

본 발명의 실시예에 따른 에폭시 수지 조성물은 에폭시 화합물, 경화제, 그리고 무기 충전재를 포함하며, 무기 충전재는 산화알루미늄(Al2O3), 탄화규소(SiC), 그리고 MnO2로 코팅된 탄소계 필러(filler) 중 적어도 하나를 포함한다.The epoxy resin composition according to an embodiment of the present invention includes an epoxy compound, a curing agent, and an inorganic filler, and the inorganic filler is a carbon-based filler coated with aluminum oxide (Al 2 O 3 ), silicon carbide (SiC), and MnO 2 Includes at least one of (filler).

보다 상세하게는, 본 발명의 실시예에 따른 에폭시 수지 조성물은 에폭시 화합물 3 내지 60wt%, 경화제 0.5 내지 5wt%, 산화알루미늄(Al2O3) 0 내지 30wt%, 탄화규소(SiC) 0 내지 30wt%, 그리고 MnO2로 코팅된 탄소계 필러(filler) 30 내지 90wt%를 포함한다. More specifically, the epoxy resin composition according to the embodiment of the present invention is an epoxy compound 3 to 60wt%, a curing agent 0.5 to 5wt%, aluminum oxide (Al 2 O 3 ) 0 to 30wt%, silicon carbide (SiC) 0 to 30wt% %, and 30 to 90 wt% of a carbon-based filler coated with MnO 2 .

에폭시 수지 조성물에 에폭시 화합물이 3 내지 60wt%로 포함되면, 강도가 양호하여 밀착성이 우수할 뿐만 아니라 두께 조절이 용이하다. 그리고, 에폭시 수지 조성물에 경화제가 0.5 내지 5wt%로 포함되면, 경화가 용이하며, 강도가 양호하여 밀착성이 우수하다. 그리고, 에폭시 수지 조성물에 무기충전재로서 산화알루미늄(Al2O3) 0 내지 30wt%, 탄화규소(SiC) 0 내지 30wt%, 그리고 MnO2로 코팅된 탄소계 필러(filler) 30 내지 90wt%로 포함되면, 열전도도가 우수할 뿐만 아니라 전기전도도도 낮은 효과를 가지며, 저열팽창성, 고내열성, 성형성이 우수하다.When the epoxy resin composition contains 3 to 60 wt% of the epoxy compound, the strength is good, so that adhesion is excellent, and thickness control is easy. In addition, when the curing agent is contained in an amount of 0.5 to 5 wt% in the epoxy resin composition, it is easy to cure, and the strength is good, so that adhesion is excellent. In addition, as an inorganic filler in the epoxy resin composition, aluminum oxide (Al 2 O 3 ) 0 to 30 wt%, silicon carbide (SiC) 0 to 30 wt%, and a carbon-based filler coated with MnO 2 at 30 to 90 wt% If so, not only has excellent thermal conductivity, but also has a low electrical conductivity effect, excellent low thermal expansion, high heat resistance, and moldability.

본 발명의 한 실시예에 따른 에폭시 수지 조성물은 결정성 에폭시 화합물 및 비결정성 에폭시 화합물을 포함하되, 결정성 에폭시 화합물 10 중량부에 대하여 비결정성 에폭시 화합물 3 내지 40 중량부를 포함할 수 있다. 이와 같은 비율로 결정성 에폭시 화합물과 비결정성 에폭시 화합물이 포함되면, 결정화가 용이하여 열전도 효과를 높일 수 있고, 상온 안정화가 가능하다.The epoxy resin composition according to an embodiment of the present invention includes a crystalline epoxy compound and an amorphous epoxy compound, but may include 3 to 40 parts by weight of an amorphous epoxy compound based on 10 parts by weight of the crystalline epoxy compound. When the crystalline epoxy compound and the amorphous epoxy compound are included in such a ratio, crystallization is easy, the heat conduction effect can be increased, and room temperature stabilization is possible.

여기서, 결정성 에폭시 화합물은 메조겐(mesogen) 구조를 포함할 수 있다. 메조겐(mesogen)은 액정(liquid crystal)의 기본 단위이며, 강성(rigid) 구조를 포함한다. 메조겐은, 예를 들면 하기 (a) 내지 (e)등과 같은 강성 구조를 포함할 수 있다.Here, the crystalline epoxy compound may include a mesogen structure. Mesogen is a basic unit of a liquid crystal and includes a rigid structure. Mesogen may contain, for example, a rigid structure such as the following (a) to (e).

(a)(a)

Figure 112014025600631-pat00001
Figure 112014025600631-pat00001

(b)(b)

Figure 112014025600631-pat00002
Figure 112014025600631-pat00002

(c)(c)

Figure 112014025600631-pat00003
Figure 112014025600631-pat00003

(d)(d)

Figure 112014025600631-pat00004
Figure 112014025600631-pat00004

(e)(e)

Figure 112014025600631-pat00005
Figure 112014025600631-pat00005

메조겐 구조를 포함하는 결정성 에폭시 화합물은, 예를 들면 4,4'-바이페놀 에테르 디글리시딜 에테르(4,4'-biphenolether diglycidyl ether), 즉 SE-4280를 포함할 수 있으나, 이에 한정되는 것은 아니다.The crystalline epoxy compound containing a mesogenic structure may include, for example, 4,4'-biphenolether diglycidyl ether, that is, SE-4280, It is not limited.

그리고, 비결정성 에폭시 화합물은 분자 중 에폭시기를 2개 이상 가지는 통상의 비결정성 에폭시 화합물일 수 있다.In addition, the amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in the molecule.

비결정성 에폭시 화합물은, 예를 들면 비스페놀 A, 비스페놀 F, 3,3',5,5'-테트라메틸-4,4'-디히드록시디페닐메탄, 4,4'-디히드록시디페닐술폰, 4,4'-디히드록시디페닐술피드, 4,4'-디히드록시디페닐케톤, 플루오렌비스페놀, 4,4'-비페놀,3,3',5,5'-테트라메틸-4,4'-디히드록시비페닐, 2,2'-비페놀, 레조르신, 카테콜, t-부틸카테콜, 히드로퀴논, t-부틸히드로퀴논, 1,2-디히드록시나프탈렌, 1,3-디히드록시나프탈렌, 1,4-디히드록시나프탈렌, 1,5-디히드록시나프탈렌, 1,6-디히드록시나프탈렌, 1,7-디히드록시나프탈렌, 1,8-디히드록시나프탈렌, 2,3-디히드록시나프탈렌, 2,4-디히드록시나프탈렌, 2,5-디히드록시나프탈렌, 2,6-디히드록시나프탈렌, 2,7-디히드록시나프탈렌, 2,8-디히드록시나프탈렌, 상기 디히드록시나프탈렌의 알릴화물 또는 폴리알릴화물, 알릴화비스페놀A, 알릴화비스페놀F, 알릴화페놀노볼락 등의 2가의 페놀류, 혹은 페놀노볼락, 비스페놀A노볼락, o-크레졸노볼락, m-크레졸노볼락, p-크레졸노볼락, 크실레놀노볼락, 폴리-p-히드록시스티렌, 트리스-(4-히드록시페닐)메탄, 1,1,2,2-테트라키스(4-히드록시페닐)에탄, 플루오로글리시놀, 피로갈롤, t-부틸피로갈롤, 알릴화피로갈롤, 폴리알릴화피로갈롤, 1,2,4-벤젠트리올, 2,3,4-트리히드록시벤조페논, 페놀아랄킬수지, 나프톨아랄킬수지, 디시클로펜타디엔계 수지 등의3가 이상의 페놀류, 테트라브로모비스페놀A 등의 할로겐화비스페놀류 및 이들로부터 선택된 혼합물 중 하나로부터 유도되는 글리시딜에테르화물일 수 있다.An amorphous epoxy compound is, for example, bisphenol A, bisphenol F, 3,3',5,5'-tetramethyl-4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl Sulfone, 4,4'-dihydroxydiphenylsulfide, 4,4'-dihydroxydiphenylketone, fluorenebisphenol, 4,4'-biphenol,3,3',5,5'-tetra Methyl-4,4'-dihydroxybiphenyl, 2,2'-biphenol, resorcin, catechol, t-butylcatechol, hydroquinone, t-butylhydroquinone, 1,2-dihydroxynaphthalene, 1 ,3-dihydroxynaphthalene, 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 1,8-dihydr Roxynaphthalene, 2,3-dihydroxynaphthalene, 2,4-dihydroxynaphthalene, 2,5-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2, Divalent phenols such as 8-dihydroxynaphthalene, allylated or polyallylated dihydroxynaphthalene, allylated bisphenol A, allylated bisphenol F, allylated phenol novolac, or phenol novolac, bisphenol A novolac , o-cresol novolac, m-cresol novolac, p-cresol novolac, xylenol novolac, poly-p-hydroxystyrene, tris-(4-hydroxyphenyl)methane, 1,1,2,2 -Tetrakis(4-hydroxyphenyl)ethane, fluoroglycinol, pyrogallol, t-butyl pyrogallol, allylated pyrogallol, polyallyled pyrogallol, 1,2,4-benzenetriol, 2, One of trivalent or higher phenols such as 3,4-trihydroxybenzophenone, phenol aralkyl resin, naphthol aralkyl resin, dicyclopentadiene resin, halogenated bisphenols such as tetrabromobisphenol A, and mixtures selected from these It may be a glycidyl ether product derived from.

비결정성 에폭시 화합물의 일 예는 화학식 1과 같다.An example of the amorphous epoxy compound is the same as in Formula 1.

[화학식 1][Formula 1]

Figure 112014025600631-pat00006
Figure 112014025600631-pat00006

그리고, 본 발명의 한 실시예에 따른 에폭시 수지 조성물에 포함되는 경화제는 아민계 경화제, 페놀계 경화제, 산무수물계 경화제, 폴리메르캅탄계 경화제, 폴리아미노아미드계 경화제, 이소시아네이트계 경화제 및 블록 이소시아네이트계 경화제 중 적어도 하나를 포함할 수 있다. In addition, the curing agent included in the epoxy resin composition according to an embodiment of the present invention is an amine-based curing agent, a phenolic curing agent, an acid anhydride-based curing agent, a polymercaptan-based curing agent, a polyaminoamide-based curing agent, an isocyanate-based curing agent and a block isocyanate-based It may contain at least one of curing agents.

아민계 경화제는, 예를 들면 4, 4'-디아미노디페닐설폰(diamino diphenyl sulfone)일 수 있다. 하기 화학식 2는 디아미노디페닐설폰의 일 예이다. The amine-based curing agent may be, for example, 4, 4'-diamino diphenyl sulfone. Formula 2 below is an example of diaminodiphenylsulfone.

[화학식 2][Formula 2]

Figure 112014025600631-pat00007

Figure 112014025600631-pat00007

아민계 경화제의 다른 예는, 지방족 아민류, 폴리에테르폴리아민류, 지환식 아민류, 방향족 아민류 등일 수 있으며, 지방족 아민류로서는, 에틸렌디아민, 1,3-디아미노프로판, 1,4-디아미노프로판, 헥사메틸렌디아민, 2,5-디메틸헥사메틸렌디아민, 트리메틸헥사메틸렌디아민, 디에틸렌트리아민, 이미노비스프로필아민, 비스(헥사메틸렌)트리아민, 트리에틸렌테트라민, 테트라에틸렌펜타민, 펜타에틸렌헥사민, N-히드록시에틸에틸렌디아민, 테트라(히드록시에틸)에틸렌디아민 등을 들 수 있다. 폴리에테르폴리아민류로서는, 트리에틸렌글리콜디아민, 테트라에틸렌글리콜디아민, 디에틸렌글리콜비스(프로필아민), 폴리옥시프로필렌디아민, 폴리옥시프로필렌트리아민류 및 이들로부터 선택된 혼합물 중 하나일 수 있다. 지환식 아민류로서는, 이소포론디아민, 메타센디아민, N-아미노에틸피페라진, 비스(4-아미노-3-메틸디시클로헥실)메탄, 비스(아미노메틸)시클로헥산, 3,9-비스(3-아미노프로필)2,4,8,10-테트라옥사스피로(5,5)운데칸, 노르보르넨디아민 등을 들 수 있다. 방향족 아민류로서는, 테트라클로로-p-크실렌디아민, m-크실렌디아민, p-크실렌디아민, m-페닐렌디아민, o-페닐렌디아민, p-페닐렌디아민, 2,4-디아미노아니솔, 2,4-톨루엔디아민, 2,4-디아미노디페닐메탄, 4,4'-디아미노디페닐메탄, 4,4'-디아미노-1,2-디페닐에탄, 2,4-디아미노디페닐술폰, m-아미노페놀, m-아미노벤질아민, 벤질디메틸아민, 2-디메틸아미노메틸)페놀, 트리에탄올아민, 메틸벤질아민, α-(m-아미노페닐)에틸아민, α-(p-아미노페닐)에틸아민, 디아미노디에틸디메틸디페닐메탄, α,α'-비스(4-아미노페닐)-p-디이소프로필벤젠 및 이들로부터 선택된 혼합물 중 하나일 수 있다.Other examples of the amine curing agent may be aliphatic amines, polyether polyamines, alicyclic amines, aromatic amines, and the like, and examples of the aliphatic amines include ethylenediamine, 1,3-diaminopropane, 1,4-diaminopropane, hexa Methylenediamine, 2,5-dimethylhexamethylenediamine, trimethylhexamethylenediamine, diethylenetriamine, iminobispropylamine, bis(hexamethylene)triamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, N-hydroxyethylethylenediamine, tetra(hydroxyethyl)ethylenediamine, etc. are mentioned. As the polyether polyamine, it may be one of triethylene glycol diamine, tetraethylene glycol diamine, diethylene glycol bis (propylamine), polyoxypropylene diamine, polyoxypropylene triamine, and a mixture selected from these. As alicyclic amines, isophoronediamine, metasenediamine, N-aminoethylpiperazine, bis(4-amino-3-methyldicyclohexyl)methane, bis(aminomethyl)cyclohexane, 3,9-bis(3 -Aminopropyl) 2,4,8,10-tetraoxaspiro (5,5) undecane, norbornenediamine, and the like. As aromatic amines, tetrachloro-p-xylenediamine, m-xylenediamine, p-xylenediamine, m-phenylenediamine, o-phenylenediamine, p-phenylenediamine, 2,4-diaminoanisole, 2 ,4-toluenediamine, 2,4-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4,4'-diamino-1,2-diphenylethane, 2,4-diaminodi Phenylsulfone, m-aminophenol, m-aminobenzylamine, benzyldimethylamine, 2-dimethylaminomethyl)phenol, triethanolamine, methylbenzylamine, α-(m-aminophenyl)ethylamine, α-(p-amino Phenyl)ethylamine, diaminodiethyldimethyldiphenylmethane, α,α'-bis(4-aminophenyl)-p-diisopropylbenzene, and a mixture selected from these.

페놀계 경화제는, 예를 들면 비스페놀A, 비스페놀F, 4,4'-디히드록시디페닐메탄, 4,4'-디히드록시디페닐에테르, 1,4-비스(4-히드록시페녹시)벤젠, 1,3-비스(4-히드록시페녹시)벤젠, 4,4'-디히드록시디페닐술피드, 4,4'-디히드록시디페닐케톤, 4,4'-디히드록시디페닐술폰, 4,4'-디하이드록시디페닐에스터, 4,4'-디히드록시비페닐, 2,2'-디히드록시비페닐, 10-(2,5-디히드록시페닐)-10H-9-옥사-10-포스파페난트렌-10-옥사이드, 페놀노볼락, 비스페놀A노볼락, o-크레졸노볼락, m-크레졸노볼락, p-크레졸노볼락, 크실레놀노볼락, 폴리-p-히드록시스티렌, 히드로퀴논, 레조르신, 카테콜, t-부틸카테콜, t-부틸히드로퀴논, 플루오로글리시놀, 피로갈롤, t-부틸피로갈롤, 알릴화피로갈롤, 폴리알릴화피로갈롤, 1,2,4-벤젠트리올, 2,3,4-트리히드록시벤조페논, 1,2-디히드록시나프탈렌, 1,3-디히드록시나프탈렌, 1,4-디히드록시나프탈렌, 1,5-디히드록시나프탈렌, 1,6-디히드록시나프탈렌, 1,7-디히드록시나프탈렌, 1,8-디히드록시나프탈렌, 2,3-디히드록시나프탈렌, 2,4-디히드록시나프탈렌, 2,5-디히드록시나프탈렌, 2,6-디히드록시나프탈렌, 2,7-디히드록시나프탈렌, 2,8-디히드록시나프탈렌, 상기 디히드록시나프탈렌의 알릴화물 또는 폴리알릴화물, 알릴화비스페놀A, 알릴화비스페놀F, 알릴화페놀노볼락, 알릴화피로갈롤 및 이들로부터 선택된 혼합물 중 하나일 수 있다.The phenolic curing agent is, for example, bisphenol A, bisphenol F, 4,4'-dihydroxydiphenylmethane, 4,4'-dihydroxydiphenyl ether, 1,4-bis(4-hydroxyphenoxy). )Benzene, 1,3-bis(4-hydroxyphenoxy)benzene, 4,4'-dihydroxydiphenylsulfide, 4,4'-dihydroxydiphenylketone, 4,4'-dihydr Roxydiphenylsulfone, 4,4'-dihydroxydiphenylester, 4,4'-dihydroxybiphenyl, 2,2'-dihydroxybiphenyl, 10-(2,5-dihydroxyphenyl )-10H-9-oxa-10-phosphaphenanthrene-10-oxide, phenol novolac, bisphenol A novolac, o-cresol novolac, m-cresol novolac, p-cresol novolac, xylenol novolac , Poly-p-hydroxystyrene, hydroquinone, resorcin, catechol, t-butylcatechol, t-butylhydroquinone, fluoroglycinol, pyrogallol, t-butyl pyrogallol, allylated pyrogallol, polyallyl Hwapirogallol, 1,2,4-benzenetriol, 2,3,4-trihydroxybenzophenone, 1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene, 1,4-dihydro Roxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 1,8-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2, 4-dihydroxynaphthalene, 2,5-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2,8-dihydroxynaphthalene, allyl of the dihydroxynaphthalene It may be one of a cargo or polyallylate, allylated bisphenol A, allylated bisphenol F, allylated phenol novolac, allylated pyrogallol, and mixtures selected from these.

산무수물계 경화제는, 예를 들면 도데세닐무수숙신산, 폴리아디핀산무수물, 폴리아젤라인산무수물, 폴리세바신산무수물, 폴리(에틸옥타데칸이산)무수물, 폴리(페닐헥사데칸이산)무수물, 메틸테트라히드로무수프탈산, 메틸헥사히드로무수프탈산, 헥사히드로무수프탈산, 무수메틸하이믹산, 테트라히드로무수프탈산, 트리알킬테트라히드로무수프탈산, 메틸시클로헥센디카르본산무수물, 메틸시클로헥센테트라카르본산무수물, 무수프탈산, 무수트리멜리트산, 무수피로멜리트산, 벤조페논테트라카르본산무수물, 에틸렌글리콜비스트리멜리테이트, 무수헤트산, 무수나딕산, 무수메틸나딕산, 5-(2,5-디옥소테트라히드로-3-푸라닐)-3-메틸-3-시클로헥산-1,2-디카르본산무수물, 3,4-디카르복시-1,2,3,4-테트라히드로-1-나프탈렌숙신산이무수물, 1-메틸-디카르복시-1,2,3,4-테트라히드로-1-나프탈렌숙신산이무수물 및 이들로부터 선택된 혼합물 중 하나일 수 있다.Acid anhydride-based curing agents include, for example, dodecenyl succinic anhydride, polyadipic anhydride, polyazeleic anhydride, polysebacic anhydride, poly(ethyloctadecanedioic acid) anhydride, poly(phenylhexadecanedioic acid) anhydride, methyltetrahydro Phthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, methylhymic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexenedicarboxylic anhydride, methylcyclohexenetetracarboxylic anhydride, phthalic anhydride, Trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimelitate, hetic anhydride, nadic anhydride, methylnadic anhydride, 5-(2,5-dioxotetrahydro-3 -Furanyl)-3-methyl-3-cyclohexane-1,2-dicarboxylic anhydride, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic anhydride, 1- It may be one of methyl-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic anhydride and mixtures selected from these.

2 종류 이상의 경화제를 혼합하여 사용할 수도 있다.It is also possible to mix and use two or more types of hardeners.

본 발명의 한 실시예에 따른 에폭시 수지 조성물은 경화 촉진제를 더 포함할 수 있다. 경화 촉진제는, 예를 들면 아민류 경화 촉진제, 이미다졸류 경화 촉진제, 유기 포스핀류 경화 촉진제, 루이스산 경화 촉진제 등이 있고, 구체적으로는, 1,8-디아자비시클로(5,4,0)운데센-7, 트리에틸렌디아민, 벤질디메틸아민, 트리에탄올아민, 디메틸아미노에탄올, 트리스(디메틸아미노메틸)페놀 등의 3급 아민, 2-메틸이미다졸, 2-페닐이미다졸, 2-페닐-4-메틸이미다졸, 2-헵타데실이미다졸 등의 이미다졸류, 트리부틸포스핀, 메틸디페닐포스핀, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포늄·테트라페닐보레이트, 테트라페닐포스포늄·에틸트리페닐보레이트, 테트라부틸포스포늄·테트라부틸보레이트 등의 테트라 치환포스포늄·테트라 치환 보레이트, 2-에틸-4-메틸이미다졸·테트라페닐보레이트, N-메틸모르폴린·테트라페닐보레이트 등의 테트라페닐보론염 등이 있다.The epoxy resin composition according to an embodiment of the present invention may further include a curing accelerator. The curing accelerator includes, for example, an amine curing accelerator, an imidazole curing accelerator, an organic phosphine curing accelerator, a Lewis acid curing accelerator, and the like. Specifically, 1,8-diazabicyclo (5,4,0) Tertiary amines such as sen-7, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol, 2-methylimidazole, 2-phenylimidazole, 2-phenyl- Imidazoles such as 4-methylimidazole and 2-heptadecylimidazole, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, phenylphosphine, Tetra-substituted phosphonium-tetra-substituted borates such as tetraphenylphosphonium-tetraphenylborate, tetraphenylphosphonium-ethyltriphenylborate, tetrabutylphosphonium-tetrabutylborate, 2-ethyl-4-methylimidazole-tetra And tetraphenyl boron salts such as phenyl borate and N-methylmorpholine tetraphenyl borate.

그리고, 본 발명의 한 실시예에 따른 에폭시 수지 조성물은 무기충전재로서 산화알루미늄(Al2O3) 0 내지 30wt%, 바람직하게는 5 내지 25wt%, 더욱 바람직하게는 10 내지 20wt%, 탄화규소(SiC) 0 내지 30wt%, 바람직하게는 5 내지 25wt%, 더욱 바람직하게는 10 내지 20wt%, 그리고 MnO2로 코팅된 탄소계 필러(filler) 30 내지 90wt%, 바람직하게는 40 내지 80wt%, 더욱 바람직하게는 50 내지 70wt%로 포함할 수 있다. 산화알루미늄, 탄화규소 및 MnO2로 코팅된 탄소계 필러가 이상의 수치 범위 내에서 포함되면, 열전도도가 높고 전기전도도가 낮아 인쇄회로기판의 절연층에 사용되기에 적합한 에폭시 수지 조성물을 얻을 수 있다.And, the epoxy resin composition according to an embodiment of the present invention as an inorganic filler, aluminum oxide (Al 2 O 3 ) 0 to 30 wt%, preferably 5 to 25 wt%, more preferably 10 to 20 wt%, silicon carbide ( SiC) 0 to 30 wt%, preferably 5 to 25 wt%, more preferably 10 to 20 wt%, and 30 to 90 wt% of a carbon-based filler coated with MnO 2 , preferably 40 to 80 wt%, further Preferably it may contain 50 to 70wt%. When the carbon-based filler coated with aluminum oxide, silicon carbide, and MnO 2 is included within the above numerical range, it is possible to obtain an epoxy resin composition suitable for use in an insulating layer of a printed circuit board due to high thermal conductivity and low electrical conductivity.

여기서, 탄소계 필러는 탄화규소(SiC), 탄소나노튜브(Carbon Nano Tube, CNT), 그라파이트(graphite) 및 탄소섬유(Carbon fiber) 중 적어도 하나를 포함할 수 있다. 일반적으로, 탄소계 필러는 세라믹계 필러보다 우수한 열전도성을 가진다. 다만, 탄소계 필러는 전기전도도도 높기 때문에, 절연 재료로 사용되기에는 한계가 있다. 본 발명의 실시예에 따라 열전도도가 우수한 탄소계 필러의 표면 상에 절연 성능이 우수한 MnO2가 코팅된 무기충전재를 사용하면, 열전도도는 우수하지만 전기전도도는 낮은 에폭시 수지 조성물을 얻을 수 있다. Here, the carbon-based filler may include at least one of silicon carbide (SiC), carbon nanotube (CNT), graphite, and carbon fiber. In general, carbon-based fillers have better thermal conductivity than ceramic-based fillers. However, since carbon-based fillers have high electrical conductivity, there is a limit to being used as an insulating material. According to an embodiment of the present invention, when an inorganic filler coated with MnO 2 having excellent insulation performance on the surface of a carbon-based filler having excellent thermal conductivity is used, an epoxy resin composition having excellent thermal conductivity but low electrical conductivity can be obtained.

본 발명의 한 실시예에 따르면, MnO2가 코팅된 탄소계 필러는 MnCl24H2O를 이소프로필알코올 내에서 음파처리(sonication)하여 분산시키고(①), KMnO4를 증류수에 분산시킨 후(②), ① 내에 평균 직경이 약 80㎛인 탄화규소 분말 10g을 넣은 후 온도를 약 80℃로 올리고(③), ②를 ③ 내에 첨가하여 약 1시간 동안 반응시킨 후(④), 필터링하여 90℃에서 12시간 동안 건조시켜(⑤) 얻을 수 있다. 이때, MnO2는 탄소계 필러 상에서 약 20nm의 두께로 코팅될 수 있다. 다만, 이에 한정되는 것은 아니며, 다양한 방법을 이용하여 MnO2가 코팅된 탄소계 필러를 얻을 수 있다.According to one embodiment of the present invention, the carbon-based filler coated with MnO 2 is dispersed by sonicating MnCl 2 4H 2 O in isopropyl alcohol (①), and after dispersing KMnO 4 in distilled water ( ②), Put 10g of silicon carbide powder with an average diameter of about 80㎛ in ①, raise the temperature to about 80℃ (③), add ② in ③ and react for about 1 hour (④), filter It can be obtained by drying (⑤) at ℃ for 12 hours. At this time, MnO 2 may be coated with a thickness of about 20 nm on the carbon-based filler. However, the present invention is not limited thereto, and a carbon-based filler coated with MnO 2 may be obtained using various methods.

도 1 내지 4는 본 발명의 한 실시예에 따른 에폭시 수지 조성물에 포함되는 MnO2가 코팅된 탄소계 필러의 SEM(Scanning Electron Microscope) 이미지이다. 도 1 내지 2는 응집형(aggromerate type) 또는 구형(spherical type) 탄화규소에 MnO2가 코팅된 예이고, 도 3 내지 4는 무정형 탄화규소 상에 MnO2가 코팅된 예이다. 1 to 4 are SEM (Scanning Electron Microscope) images of a carbon-based filler coated with MnO 2 contained in an epoxy resin composition according to an embodiment of the present invention. Figures 1 to 2 is aggregation type (aggromerate type) or spherical (spherical type) and with a MnO 2 coating on the silicon carbide for example, 3 to 4 is an example in which the MnO 2 coating on the amorphous silicon carbide.

본 발명의 실시예에 따른 에폭시 수지 조성물은 촉매, 첨가제 및 용매를 더 포함할 수 있다. 촉매는, 예를 들면 화학식 3과 같은 이미다졸계 첨가물을 포함할 수 있다. The epoxy resin composition according to the embodiment of the present invention may further include a catalyst, an additive, and a solvent. The catalyst may include, for example, an imidazole-based additive such as Chemical Formula 3.

[화학식 3][Formula 3]

Figure 112014025600631-pat00008
Figure 112014025600631-pat00008

본 발명의 한 실시예에 따른 에폭시 수지 조성물이 화학식 3의 촉매를 포함하는 경우, 금속과의 밀착성을 높일 수 있다. 이에 따라, 절연층 및 구리 등으로 이루어진 회로 패턴 간의 접착력이 높아지며, 회로 패턴의 이탈 가능성 및 단선 가능성이 낮아지므로, 인쇄회로기판의 가공이 용이하게 되고, 인쇄회로기판의 신뢰성이 높아진다. When the epoxy resin composition according to an embodiment of the present invention includes the catalyst of Formula 3, adhesion with metal may be improved. Accordingly, the adhesion between the insulating layer and the circuit pattern made of copper or the like is increased, and the possibility of separation and disconnection of the circuit pattern is lowered, thereby facilitating processing of the printed circuit board and increasing the reliability of the printed circuit board.

본 발명의 한 실시예에 따른 에폭시 수지 조성물은 인쇄회로기판에 적용될 수 있다. 도 5는 본 발명의 한 실시예에 따른 인쇄회로기판의 단면도이다.The epoxy resin composition according to an embodiment of the present invention may be applied to a printed circuit board. 5 is a cross-sectional view of a printed circuit board according to an embodiment of the present invention.

도 5를 참조하면, 인쇄회로기판(100)은 금속 플레이트(110), 절연층(120) 및 회로 패턴(130)을 포함한다.Referring to FIG. 5, the printed circuit board 100 includes a metal plate 110, an insulating layer 120, and a circuit pattern 130.

금속 플레이트(110)는 구리, 알루미늄, 니켈, 금, 백금 및 이들로부터 선택된 합금으로 이루어질 수 있다.The metal plate 110 may be made of copper, aluminum, nickel, gold, platinum, and an alloy selected from these.

금속 플레이트(110) 상에는 본 발명의 한 실시예에 따른 에폭시 수지 조성물로 이루어진 절연층(120)이 형성된다.An insulating layer 120 made of an epoxy resin composition according to an embodiment of the present invention is formed on the metal plate 110.

절연층(120) 상에는 회로 패턴(130)이 형성된다. 회로 패턴(130)은 구리, 니켈 등의 금속으로 이루어질 수 있다.A circuit pattern 130 is formed on the insulating layer 120. The circuit pattern 130 may be made of a metal such as copper or nickel.

절연층(120)은 금속 플레이트(110)와 회로 패턴(130) 사이를 절연한다.The insulating layer 120 insulates between the metal plate 110 and the circuit pattern 130.

본 발명의 한 실시예에 따른 에폭시 수지 조성물을 경화하여 절연층으로 이용함으로써, 방열 성능이 우수한 인쇄회로기판을 얻을 수 있다.By curing the epoxy resin composition according to an embodiment of the present invention and using it as an insulating layer, a printed circuit board having excellent heat dissipation performance can be obtained.

특히, 본 발명의 한 실시예에 따르면, 열전도도가 8W/Km 이상이고, 전기전도도가 10-5S/cm 이하인 에폭시 수지 조성물을 포함하는 절연층을 얻을 수 있다. 바람직하게는, 열전도도가 10W/Km 이상이고, 전기전도도가 10-7S/cm 이하인 에폭시 수지 조성물을 포함하는 절연층을 얻을 수 있다. In particular, according to an embodiment of the present invention, it is possible to obtain an insulating layer including an epoxy resin composition having a thermal conductivity of 8 W/Km or more and an electrical conductivity of 10 -5 S/cm or less. Preferably, an insulating layer comprising an epoxy resin composition having a thermal conductivity of 10 W/Km or more and an electrical conductivity of 10 -7 S/cm or less can be obtained.

이하, 실시예 및 비교예를 이용하여 더욱 구체적으로 설명한다.Hereinafter, it will be described in more detail using Examples and Comparative Examples.

<실시예 1><Example 1>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, MnO2가 코팅된 탄화규소 90wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 실시예 1의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) was dissolved for 20 minutes, and then 90wt% of silicon carbide coated with MnO 2 and 0.5wt% of the catalyst of Formula 3 were stirred for 2 hours. After the solution having been stirred was coated on a copper plate, it was pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Example 1.

<실시예 2><Example 2>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 25wt%, 탄화규소 25wt%, MnO2가 코팅된 탄화규소 40wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 실시예 2의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) for 20 minutes, aluminum oxide 25wt%, silicon carbide 25wt%, MnO 2 coated silicon carbide 40wt% and the catalyst of formula 3 0.5wt% were stirred for 2 hours. After the solution having been stirred was coated on a copper plate, it was pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Example 2.

<실시예 3><Example 3>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 20wt%, 탄화규소 20wt%, MnO2가 코팅된 탄화규소 50wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 실시예 3의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) after dissolving for 20 minutes, aluminum oxide 20wt%, silicon carbide 20wt%, MnO 2 coated silicon carbide 50wt% and the catalyst of formula 3 0.5wt% were stirred for 2 hours. After the solution having been stirred was coated on a copper plate, it was pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Example 3.

<실시예 4><Example 4>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 10wt%, 탄화규소 10wt%, MnO2가 코팅된 탄화규소 70wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 실시예 4의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) for 20 minutes, aluminum oxide 10wt%, silicon carbide 10wt%, MnO 2 coated silicon carbide 70wt%, and the catalyst of formula 3 0.5wt% were stirred for 2 hours. The solution after the completion of stirring was coated on a copper plate and then pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Example 4.

<실시예 5><Example 5>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 5wt%, 탄화규소 5wt%, MnO2가 코팅된 탄화규소 80wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 실시예 5의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) after dissolving for 20 minutes, aluminum oxide 5wt%, silicon carbide 5wt%, MnO 2 coated silicon carbide 80wt% and the catalyst of formula 3 0.5wt% was stirred for 2 hours. After the solution having been stirred was coated on a copper plate, it was pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Example 5.

<비교예 1><Comparative Example 1>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 90wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 비교예 1의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) for 20 minutes, and then 90wt% of aluminum oxide and 0.5wt% of the catalyst of Formula 3 were stirred for 2 hours. After the stirring was completed, the solution was coated on a copper plate and then pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Comparative Example 1.

<비교예 2><Comparative Example 2>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 탄화규소 90wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 비교예 2의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) for 20 minutes, and then 90wt% of silicon carbide and 0.5wt% of the catalyst of Formula 3 were stirred for 2 hours. After the stirring was completed, the solution was coated on a copper plate and then pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Comparative Example 2.

<비교예 3><Comparative Example 3>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 20wt%, 탄화규소 70wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 비교예 3의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) for 20 minutes, aluminum oxide 20wt%, silicon carbide 70wt%, and 0.5wt% of the catalyst of Formula 3 were stirred for 2 hours. The solution after the completion of stirring was coated on a copper plate and then pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Comparative Example 3.

<비교예 4><Comparative Example 4>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 45wt%, 탄화규소 45wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 비교예 4의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) for 20 minutes, aluminum oxide 45wt%, silicon carbide 45wt%, and 0.5wt% of the catalyst of Formula 3 were stirred for 2 hours. After the solution having been stirred was coated on a copper plate, it was pressurized at 150° C. for 1 hour and 30 minutes to obtain an epoxy resin composition of Comparative Example 4.

<비교예 5><Comparative Example 5>

결정성 에폭시 화합물(4,4'-바이페놀 에테르 디글리시딜 에테르) 4.5wt%, 화학식 1의 비결정성 에폭시 화합물 4wt% 및 4,4'-디아미노디페닐설폰 1wt%를 MEK(Methyl Ethly Ketone)에서 20분 동안 용해시킨 후, 산화알루미늄 80wt%, 탄화규소 5wt%, MnO2가 코팅된 탄화규소 5wt% 및 화학식 3의 촉매 0.5wt%를 2시간 동안 교반시켰다. 교반이 완료된 용액을 구리판에 코팅한 후 150℃에서 1시간 30분동안 가압하여 비교예 5의 에폭시 수지 조성물을 얻었다.4.5 wt% of a crystalline epoxy compound (4,4'-biphenol ether diglycidyl ether), 4 wt% of the amorphous epoxy compound of Formula 1, and 1 wt% of 4,4'-diaminodiphenylsulfone were added to MEK (Methyl Ethly). Ketone) after dissolving for 20 minutes, aluminum oxide 80wt%, silicon carbide 5wt%, MnO 2 coated silicon carbide 5wt% and the catalyst of formula 3 0.5wt% was stirred for 2 hours. After the stirring was completed, the solution was coated on a copper plate and then pressurized at 150° C. for 1 hour and 30 minutes to obtain the epoxy resin composition of Comparative Example 5.

<실험예><Experimental Example>

실시예 1 내지 5 및 비교예 1 내지 5으로부터 얻은 조성물을 경화시킨 후, NETZSCH사 제품 LFA447형 열전도율계를 사용하여 비정상 열선법에 의하여 열전도율을 측정하였으며, 전기전도도를 측정하였다. After curing the compositions obtained from Examples 1 to 5 and Comparative Examples 1 to 5, thermal conductivity was measured by an abnormal heating wire method using an LFA447 type thermal conductivity meter manufactured by NETZSCH, and electrical conductivity was measured.

표 1은 그 결과를 나타낸다.Table 1 shows the results.

실험번호Experiment number 열전도도(W/mK)Thermal conductivity (W/mK) 전기전도도(S/cm)Electrical conductivity (S/cm) 실시예 1Example 1 9.849.84 1.89*10-8 1.89*10 -8 실시예 2 Example 2 8.658.65 5.02*10-6 5.02*10 -6 실시예 3Example 3 10.7010.70 9.63*10-8 9.63*10 -8 실시예 4Example 4 12.8812.88 5.57*10-8 5.57*10 -8 실시예 5Example 5 8.948.94 0.16*10-9 0.16*10 -9 비교예 1Comparative Example 1 6.326.32 3.21*10-10 3.21*10 -10 비교예 2Comparative Example 2 13.4613.46 4.40*10-2 4.40*10 -2 비교예 3Comparative Example 3 10.310.3 3.21*10-5 3.21*10 -5 비교예 4Comparative Example 4 8.098.09 4.40*10-3 4.40*10 -3 비교예 5Comparative Example 5 6.326.32 2.94*10-10 2.94*10 -10

표 1을 참조하면, 결정성 에폭시 화합물, 비결정성 에폭시 화합물 및 경화제를 포함하며, 무기충전재로서 MnO2가 코팅된 탄화규소를 30 내지 90wt%로 포함하는 실시예 1 내지 5의 에폭시 수지 조성물은 열전도도가 8W/mK 이상이고, 전기전도도가 10-5 이하이므로 인쇄회로기판의 절연층에 사용되기에 적합함을 알 수 있다. 특히, 무기충전재로서 산화알루미늄 10 내지 20wt%, 탄화규소 10 내지 20wt%, MnO2가 코팅된 탄화규소 50 내지 70wt%를 포함하는 실시예 3 내지 4의 에폭시 수지 조성물은 열전도도가 10W/mK 이상이고 전기전도도가 10-7S/cm 이하임을 알 수 있다. Referring to Table 1, the epoxy resin compositions of Examples 1 to 5 comprising a crystalline epoxy compound, an amorphous epoxy compound, and a curing agent, and containing 30 to 90 wt% of silicon carbide coated with MnO 2 as an inorganic filler are thermally conductive. Since the degree is 8W/mK or more and the electrical conductivity is 10 -5 or less, it can be seen that it is suitable for use in an insulating layer of a printed circuit board. In particular, the epoxy resin compositions of Examples 3 to 4 containing 10 to 20 wt% of aluminum oxide, 10 to 20 wt% of silicon carbide, and 50 to 70 wt% of silicon carbide coated with MnO 2 as inorganic fillers have a thermal conductivity of 10 W/mK or more. And it can be seen that the electrical conductivity is 10 -7 S/cm or less.

이에 반하여, 무기충전재로서 MnO2가 코팅된 탄화규소를 포함하지 않고 산화알루미늄을 90wt% 포함하는 비교예 1의 에폭시 수지 조성물은 열전도도(6.32W/mK)가 낮음을 알 수 있다. 그리고, 무기충전재로서 탄화규소를 90wt% 포함하는 비교예 2의 에폭시 수지 조성물은 열전도도(13.46W/mK)는 높으나, 전기 전도도(4.40*10-2)도 높아 절연 재료로 사용되기에 적합하지 않음을 알 수 있다. 그리고, 무기충전재로서 MnO2가 코팅된 탄화규소를 포함하더라도 그 함량이 낮은 비교예 5의 에폭시 수지 조성물도 열전도도가 낮아 인쇄회로기판의 절연층에 적용되기에 적합하지 않음을 알 수 있다. On the other hand, it can be seen that the epoxy resin composition of Comparative Example 1 containing 90wt% of aluminum oxide without including silicon carbide coated with MnO 2 as an inorganic filler has a low thermal conductivity (6.32W/mK). In addition, the epoxy resin composition of Comparative Example 2 containing 90 wt% silicon carbide as an inorganic filler has high thermal conductivity (13.46 W/mK), but has high electrical conductivity (4.40 * 10 -2 ), so it is not suitable for use as an insulating material. You can see that it is not. In addition, it can be seen that even if the inorganic filler includes silicon carbide coated with MnO 2, the epoxy resin composition of Comparative Example 5 having a low content also has low thermal conductivity and is not suitable for application to an insulating layer of a printed circuit board.

상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술 분야의 숙련된 당업자는 하기의 특허 청구의 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다. Although the above has been described with reference to preferred embodiments of the present invention, those skilled in the art will variously modify and change the present invention within the scope not departing from the spirit and scope of the present invention described in the following claims. You will understand that you can do it.

100: 인쇄회로기판
110: 금속 플레이트
120: 절연층
130: 회로패턴
100: printed circuit board
110: metal plate
120: insulating layer
130: circuit pattern

Claims (8)

에폭시 화합물 3 내지 60wt%,
경화제 0.5 내지 5wt%,
산화알루미늄 0 내지 30wt%,
탄화규소 0 내지 30wt%, 그리고
MnO2로 코팅된 탄화규소 30 내지 90wt%를 포함하는 에폭시 수지 조성물.
3 to 60 wt% of an epoxy compound,
0.5 to 5 wt% of a curing agent,
0 to 30 wt% aluminum oxide,
0 to 30 wt% silicon carbide, and
An epoxy resin composition comprising 30 to 90wt% of silicon carbide coated with MnO 2 .
제1항에 있어서,
상기 에폭시 화합물은 결정성 에폭시 화합물 10 중량부에 대하여 비결정성 에폭시 화합물 3 내지 40 중량부를 포함하는 에폭시 수지 조성물.
The method of claim 1,
The epoxy compound is an epoxy resin composition comprising 3 to 40 parts by weight of an amorphous epoxy compound based on 10 parts by weight of the crystalline epoxy compound.
제2항에 있어서,
상기 결정성 에폭시 화합물은 메조겐 구조를 포함하는 에폭시 수지 조성물.
The method of claim 2,
The crystalline epoxy compound is an epoxy resin composition comprising a mesogenic structure.
제3항에 있어서,
상기 경화제는 디아미노디페닐술폰을 포함하는 에폭시 수지 조성물.
The method of claim 3,
The curing agent is an epoxy resin composition containing diaminodiphenylsulfone.
삭제delete 제1항에 있어서,
상기 산화알루미늄 5 내지 25wt%, 상기 탄화규소 5 내지 25wt%, 상기 MnO2로 코팅된 탄화규소 40 내지 80wt%를 포함하는 에폭시 수지 조성물.
The method of claim 1,
An epoxy resin composition comprising 5 to 25wt% of the aluminum oxide, 5 to 25wt% of the silicon carbide, and 40 to 80wt% of silicon carbide coated with the MnO 2 .
제6항에 있어서,
상기 산화알루미늄 10 내지 20wt%, 상기 탄화규소 10 내지 20wt%, 상기 MnO2로 코팅된 탄화규소 50 내지 70wt%를 포함하는 에폭시 수지 조성물.
The method of claim 6,
An epoxy resin composition comprising 10 to 20wt% of the aluminum oxide, 10 to 20wt% of the silicon carbide, and 50 to 70wt% of silicon carbide coated with the MnO 2 .
금속 플레이트,
상기 금속 플레이트 상에 형성되는 절연층, 그리고
상기 절연층 상에 형성되는 회로패턴을 포함하며,
상기 절연층은 에폭시 화합물 3 내지 60wt%, 경화제 0.5 내지 5wt%, 산화알루미늄 0 내지 30wt%, 탄화규소 0 내지 30wt%, 그리고 MnO2로 코팅된 탄화규소 30 내지 90wt%를 포함하는 에폭시 수지 조성물을 포함하는 인쇄회로기판.
Metal plate,
An insulating layer formed on the metal plate, and
It includes a circuit pattern formed on the insulating layer,
The insulating layer is an epoxy resin composition comprising 3 to 60 wt% of an epoxy compound, 0.5 to 5 wt% of a curing agent, 0 to 30 wt% of aluminum oxide, 0 to 30 wt% of silicon carbide, and 30 to 90 wt% of silicon carbide coated with MnO 2 A printed circuit board comprising.
KR1020140031226A 2014-03-17 2014-03-17 Epoxy resin composite and printed curcuit board comprising insulating layer using the same KR102172298B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546651A (en) * 2009-05-07 2009-09-30 哈尔滨工程大学 Nano graphite sheet/manganese dioxide doped composite material and preparation method thereof
JP2013014670A (en) * 2011-07-01 2013-01-24 Hitachi Chemical Co Ltd Resin composition sheet, resin composition sheet with metal foil, metal base wiring board material, metal base wiring board and electronic member

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Publication number Priority date Publication date Assignee Title
CN101687981B (en) * 2007-06-25 2012-04-04 三井金属矿业株式会社 Resin composition and copper foil with resin obtained by using the resin composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546651A (en) * 2009-05-07 2009-09-30 哈尔滨工程大学 Nano graphite sheet/manganese dioxide doped composite material and preparation method thereof
JP2013014670A (en) * 2011-07-01 2013-01-24 Hitachi Chemical Co Ltd Resin composition sheet, resin composition sheet with metal foil, metal base wiring board material, metal base wiring board and electronic member

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