KR102134268B1 - Monomer, polymer, organic layer composition, and method of forming patterns - Google Patents

Abstract

상기 화학식 1에서,
A 및 A´은 각각 독립적으로 하기 화학식 2로 표현되는 기이고,
B는 치환 또는 비치환된 C6 내지 C30의 방향족 고리이다:
[화학식 2]

상기 화학식 2에서, Ar, Z¹, Z², X 및 X´의 정의는 명세서 내 기재한 바와 같다.It relates to a monomer represented by the following formula (1), a polymer formed by the polycondensation reaction of the monomer, an organic film composition comprising the monomer and/or polymer, and a pattern forming method using the organic film composition.
[Formula 1]

In Chemical Formula 1,
A and A'are each independently a group represented by the following formula (2),
B is a substituted or unsubstituted C6 to C30 aromatic ring:
[Formula 2]

In Formula 2, Ar, Z ¹ , Z ² , X and X'are as defined in the specification.

Description

Monomer, polymer, organic film composition and pattern formation method {MONOMER, POLYMER, ORGANIC LAYER COMPOSITION, AND METHOD OF FORMING PATTERNS}

The present invention relates to a novel monomer and polymer, an organic film composition comprising the monomer and/or polymer, and a pattern forming method using the organic film composition.

Recently, the semiconductor industry has developed from a pattern of hundreds of nanometers to a very fine technology having a pattern of several to several tens of nanometers. Effective lithographic techniques are essential to realize these ultra-fine technologies.

A typical lithographic technique includes forming a material layer on a semiconductor substrate, coating a photoresist layer thereon, exposing and developing to form a photoresist pattern, and then etching the material layer using the photoresist pattern as a mask. do.

Recently, as the size of a pattern to be formed decreases, it is difficult to form a fine pattern having a good profile using only the typical lithographic technique described above. Accordingly, an organic layer called a hardmask layer may be formed between the material layer to be etched and the photoresist layer to form a fine pattern. The hard mask layer serves as an interlayer that transfers a fine pattern of photoresist to a material layer through a selective etching process.

Recently, in the semiconductor process, development of a 3D stacked structure has been in progress in keeping with the reduction in 2D size of chips. According to this trend, the line width of pattern formation in lithography needs to be made smaller.

One embodiment provides a novel monomer having excellent corrosion resistance while ensuring solubility.

Another embodiment provides a polymer formed by the polycondensation reaction of the monomer.

Another embodiment provides an organic film composition capable of realizing a high aspect ratio in a pattern of several to several tens of nanometers by spin-coating.

Another embodiment provides a pattern forming method using the organic film composition.

According to one embodiment, a monomer represented by Chemical Formula 1 is provided.

[Formula 1]

In Chemical Formula 1,

A and A'are each independently a group represented by the following formula (2),

B is a substituted or unsubstituted C6 to C30 aromatic ring:

[Formula 2]

In Chemical Formula 2,

Ar is an aromatic ring of C6 to C30,

X and X'are each independently a halogen atom, a hydroxyl group, an alkoxy group, an amine group, a thiol group, a carboxylic acid group, a nitrile group, an alkenyl group, an alkynyl group, an azide group, or a combination thereof,

Z ¹ is N,

Z ² is O, S, or NR ^a , where R ^a is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof,

* Is the connection point.

Ar in Formula 2 may be phenanthrene, pyrene, perylene, benzoperylene, or coronene.

In Formula 1, B may be any one of the substituted or unsubstituted moieties listed in Group 1 below.

[Group 1]

”는 연결 지점이다.In group 1 above, “

”Is the connection point.

The molecular weight of the monomer may be 500 to 1,500.

According to another embodiment, a polymer formed by a polycondensation reaction of the monomer represented by Chemical Formula 1 is provided.

The polymer may be formed by the X and X′ functional groups of Chemical Formula 2 as reaction sites for the polycondensation reaction.

The polymer may have a network structure.

The polymer may have a weight average molecular weight of 1,000 to 200,000.

According to another embodiment, an organic film composition comprising the above-described monomer and/or polymer and a solvent is provided.

According to another embodiment, forming a material layer on a substrate, applying the above-described organic film composition on the material layer, heat-treating the organic film composition to form a hardmask layer, over the hardmask layer Forming a silicon-containing thin film layer, forming a photoresist layer on the silicon-containing thin film layer, exposing and developing the photoresist layer to form a photoresist pattern, and using the photoresist pattern, the silicon-containing thin film layer and A method of forming a pattern comprising selectively removing the hardmask layer, exposing a portion of the material layer, and etching the exposed portion of the material layer.

The step of applying the organic film composition may be performed by a spin-on coating method.

The method may further include forming a bottom anti-reflection layer (BARC) prior to forming the photoresist layer.

The monomer and polymer according to the present invention are excellent in corrosion resistance. When the monomer and/or polymer is used as an organic film material, a film having excellent film density can be formed. When the organic film material is applied to the resist underlayer film, a fine pattern having a high aspect ratio can be realized.

1 is a flowchart illustrating a pattern forming method according to an embodiment.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art to which the present invention pertains can easily practice. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein.

Unless otherwise defined herein,'substituted' means that the hydrogen atom in the compound is a halogen atom (F, Br, Cl, or I), a hydroxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, Hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or salt thereof, sulfonic acid group or salt thereof, phosphoric acid or salt thereof, C1 to C30 alkyl group, C2 to C30 alkenyl group, C2 to C30 alky Neil group, C6 to C30 aryl group, C7 to C30 arylalkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to C15 It means substituted with a substituent selected from a cycloalkynyl group, a C3 to C30 heterocycloalkyl group, and combinations thereof.

In addition, unless otherwise defined in the present specification,'hetero' means one or three hetero atoms selected from N, O, S, and P.

In addition, unless otherwise specified in the present specification,'*' refers to a point of connection of a compound or a compound moiety.

Hereinafter, a monomer according to one embodiment is described.

The monomer according to one embodiment is represented by the following Chemical Formula 1.

[Formula 1]

In Chemical Formula 1,

A and A'are each independently a group represented by the following formula (2),

B is a substituted or unsubstituted C6 to C30 aromatic ring:

[Formula 2]

In Chemical Formula 2,

Ar is an aromatic ring of C6 to C30,

X and X'are each independently a halogen atom, a hydroxyl group, an alkoxy group, an amine group, a thiol group, a carboxylic acid group, a nitrile group, an alkenyl group, an alkynyl group, an azide group, or a combination thereof,

Z ¹ is N,

Z ² is O, S, or NR ^a , where R ^a is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof,

* Is the connection point.

The monomer has a structure in which an aromatic ring group is located on the core, and groups represented by Formula 2 are substituted on both sides of the core. The monomer can essentially secure corrosion resistance by including an aromatic ring on both the core and the substitution parts on both sides.

Substituents on both sides represented by Chemical Formula 2 each have a structure in which a heteropentagonal ring and an aromatic ring group represented by Ar are fused.

Ar portion in Formula 2 is substituted with X and X', X and X'are functional groups capable of performing a poly-condensation reaction, halogen atom, hydroxyl group, alkoxy group, amine group, thiol group, carboxylic acid Group, nitrile group, alkenyl group, alkynyl group, azide group, or any one of them.

X and X'may be the same or different from each other. For example, X and X'may be, for example, a halogen atom of the same kind or heterogeneity, and in another example, X and X'may be a halogen atom of the same kind, for example, two bromine atoms, but are not limited thereto. .

Ar in Formula 2 may be, for example, phenanthrene, pyrene, perylene, benzoperylene, or coronene substituted by X and X′ described above, but is not limited thereto.

For example, in Chemical Formula 1, B may be any one of the moieties listed in Group 1 below, but is not limited thereto.

[Group 1]

”는 연결 지점이다.In group 1 above, “

”Is the connection point.

In group 1, hydrogen in each ring group is each independently a hydroxy group, a halogen group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group , Substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted C2 to C30 heteroaryl group, or combinations thereof It may be substituted with, or may be unsubstituted.

According to another embodiment, there is provided a polymer formed by the poly-condensation reaction of the aforementioned monomer.

When heat-treating the monomer, a polycondensation reaction between a plurality of monomers may occur to form a polymer having a network structure, and in Formula 2, X and X'become a reaction site for a polycondensation reaction, and the poly-condensation reaction This can happen.

Scheme 1 below is intended to show that a polymer having a network structure is formed by heat-treating the aforementioned monomer.

[Scheme 1]

The scheme 1 is an example for showing that various types of polymer structures can be formed by heat-treating a monomer according to an embodiment, and the polymer structure is not limited thereto.

For example, the molecular weight of the aforementioned monomer may be, for example, about 500 to 1,500, and the weight average molecular weight of the above-described polymer may be, for example, about 1,000 to 200,000, but is not limited thereto. The above-described monomers and/or polymers can be optimized by selecting the molecular weight and/or weight average molecular weight within the above range to adjust the carbon content and solubility in the solvent of the organic film composition (eg, a hard mask composition).

According to another embodiment, an organic film composition comprising the above-described monomer and/or polymer and a solvent is provided.

The solvent is not particularly limited as long as it has sufficient solubility or dispersibility for the monomer and/or polymer, for example, propylene glycol, propylene glycol diacetate, methoxy propanediol, diethylene glycol, diethylene glycol butyl ether, tri( Ethylene glycol) monomethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl lactate, gamma-butyrolactone, N,N-dimethylformamide, N,N-dimethylacetamide, Methyl pyrrolidone, methyl pyrrolidinone, acetylacetone, and ethyl 3-ethoxypropionate.

The monomer and/or polymer may be included in an amount of about 0.1 to 50% by weight, about 0.1 to 30% by weight, or about 0.1 to 15% by weight based on the total content of the organic film composition. By including the monomer and/or polymer in the above range, the thickness of the organic film, the surface roughness and the degree of planarization can be controlled.

The organic film composition may further include additives such as a surfactant, a crosslinking agent, a thermal acid generator, and a plasticizer.

The surfactant may be, for example, a fluoroalkyl compound, an alkylbenzenesulfonate salt, an alkylpyridinium salt, a polyethylene glycol, a quaternary ammonium salt, but is not limited thereto.

The crosslinking agent may be, for example, melamine-based, substituted urea-based, or these polymer-based. Preferably, as a crosslinking agent having at least two crosslinking forming substituents, for example, methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxy Compounds such as methylated benzoguanamine, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, or butoxymethylated thiourea can be used.

In addition, a crosslinking agent having high heat resistance may be used as the crosslinking agent. As the crosslinking agent having high heat resistance, a compound containing a crosslinking substituent having an aromatic ring (for example, a benzene ring or a naphthalene ring) in the molecule can be used.

The thermal acid generator is an acidic compound such as p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium p-toluenesulfonic acid, salicylic acid, sulfosalicylic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthalenecarboxylic acid, and/or 2,4 ,4,6-tetrabromocyclohexadienone, benzointosylate, 2-nitrobenzyltosylate, and other organic alkyl sulfonic acid esters, but are not limited thereto.

The additive may be included in about 0.001 to 40 parts by weight based on 100 parts by weight of the organic film composition. By including in the above range, solubility can be improved without changing the optical properties of the organic film composition.

According to another embodiment, an organic film prepared using the above-described organic film composition is provided. The organic film may be in a form cured through a heat treatment process after coating the above-described organic film composition on a substrate, for example, and may include an organic thin film used in electronic devices such as a hard mask layer, a planarization film, a sacrificial film, and a filler. have.

Hereinafter, a method of forming a pattern using the above-described organic film composition will be described with reference to FIG. 1.

1 is a flowchart illustrating a pattern forming method according to an embodiment.

The pattern forming method according to one embodiment includes forming a material layer on a substrate (S1), applying the above-described organic film composition on the material layer (S2), and heat-treating the organic film composition to form a hard mask layer. Step (S3), forming a silicon-containing thin film layer on the hard mask layer (S4), forming a photoresist layer on the silicon-containing thin film layer (S5), photoresist pattern by exposing and developing the photoresist layer Forming (S6), selectively removing the silicon-containing thin film layer and the hardmask layer using the photoresist pattern, and exposing a portion of the material layer (S7), and an exposed portion of the material layer It includes the step of etching (S8).

The substrate may be, for example, a silicon wafer, a glass substrate, or a polymer substrate.

The material layer is a material to be finally patterned, and may be, for example, a metal layer such as aluminum or copper, a semiconductor layer such as silicon, or an insulating layer such as silicon oxide or silicon nitride. The material layer may be formed, for example, by chemical vapor deposition.

The organic film composition is as described above, and may be prepared in a solution form and applied by a spin-on coating method. At this time, the coating thickness of the organic film composition is not particularly limited, for example, about 50 to 200,000 Å Can be applied in thickness.

The heat treatment of the organic film composition may be performed, for example, at about 100 to 700° C. for about 10 seconds to 1 hour.

The silicon-containing thin film layer may be formed of a material such as SiCN, SiOC, SiON, SiOCN, SiC, SiO and/or SiN.

In addition, a bottom anti-reflective coating (BARC) may be further formed on the silicon-containing thin film layer before the step of forming the photoresist layer.

The step of exposing the photoresist layer may be performed using, for example, ArF, KrF or EUV. In addition, after exposure, a heat treatment process may be performed at about 100 to 700°C.

The step of etching the exposed portion of the material layer may be performed by dry etching using an etching gas, and the etching gas may be, for example, CHF ₃ , CF ₄ , Cl ₂ , BCl ₃ and a mixed gas thereof.

The etched material layer may be formed of a plurality of patterns, and the plurality of patterns may be various, such as a metal pattern, a semiconductor pattern, an insulation pattern, and may be applied to various patterns in a semiconductor integrated circuit device.

The embodiments of the present invention described above will be described in more detail through the following examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

Synthetic example

Synthetic example One

13.4 g (0.10 mol) of terephthaldehyde, 2,7-dibromophenanthrene-9,10-dione 69.5 g (0.19 mol), 231 g of ammonium acetate in a 2-neck round-bottomed flask equipped with a condenser (3.0mol), and after adding 1 L of acetic acid, synthesis was performed by stirring at 100° C. for 24 to 48 hours. After the reaction, the mixture was cooled to room temperature, and then 800 mL of water was added and stirred for 30 minutes. The solid was filtered, washed several times with water, then washed with ethanol and ethyl ether, and then dried to obtain a compound represented by Chemical Formula 1-1.

[Formula 1-1]

Synthetic example 2

1,4-naphthalenedicarboxldehyde 18.4 g (0.10 mol), 2,7-dibromophenanthrene-9,10-dione 69.5 g (0.19 mol), ammonium acetate 231 g (3.0 mol), and acetic acid in a 2 L round-bottom flask equipped with a condenser After 1 L was added, the same process as in Synthesis Example 1 was performed to obtain a compound represented by Chemical Formula 1-2.

[Formula 1-2]

Synthetic example 3

1,5-naphthalenedicarboxldehyde 18.4 g (0.10 mol), 2,7-dibromophenanthrene-9,10-dione 69.5 g (0.19 mol), ammonium acetate 231 g (3.0 mol), and acetic acid in a 2 L round bottom flask equipped with a condenser After 1 L was added, the same process as in Synthesis Example 1 was performed to obtain a compound represented by Chemical Formula 1-3.

[Formula 1-3]

Synthetic example 4

2,6-naphthalenedicarboxldehyde 18.4 g (0.10 mol), 2,7-dibromophenanthrene-9,10-dione 69.5 g (0.19 mol), ammonium acetate 231 g (3.0 mol), and acetic acid in a 2 L round-bottom flask equipped with a condenser After 1 L was added, the same process as in Synthesis Example 1 was performed to obtain a compound represented by Chemical Formula 1-4.

[Formula 1-4]

Synthetic example 5

9,10-anthracenedicarboxaldehyde 23.4 g (0.10 mol), 2,7-dibromophenanthrene-9,10-dione 69.5 g (0.19 mol), ammonium acetate 231 g (3.0 mol), and acetic acid in a 2 L round-bottom flask equipped with a condenser After 1 L was added, the same process as in Synthesis Example 1 was performed to obtain a compound represented by Chemical Formula 1-5.

[Formula 1-5]

Synthetic example 6

25.8 g (0.10 mol) of 2,7-dibromophenanthrene-9,10-dione 69.5 g (0.19 mol), 231 g (3.0 mol) of ammonium acetate, and acetic acid in a 2 L round bottom flask equipped with a condenser After 1 L was added, the same process as in Synthesis Example 1 was performed to obtain a compound represented by Chemical Formula 1-6.

[Formula 1-6]

Synthetic example 7

2,7-pyrenedicarboxaldehyde 25.8g (0.10mol), 2,7-dibromophenanthrene-9,10-dione 69.5g (0.19mol), ammonium acetate 231g (3.0mol), and acetic acid in a 2L round bottom flask equipped with a condenser After 1 L was added, the same process as in Synthesis Example 1 was performed to obtain a compound represented by Chemical Formula 1-7.

[Formula 1-7]

Comparative Synthesis Example One

4,4'-(9 H -fluoren e -9-ylidene) bisphenol 35.0 g (0.10 mol), 1,4-bis (methoxymethyl)benzene 16.6 g (0.10 mol), diethyl in a 500 mL round bottom flask equipped with a condenser After adding sulfate 15.4 g (0.10 mol) and PGMEA 134 g, a polymer represented by Chemical Formula A (MW: 1700) was obtained through the same synthesis process as in Synthesis Example 1.

[Formula A]

Comparative Synthesis Example 2

21.8 g (0.10 mol) of 1-hydroxypyrene, 14.5 g (0.10 mol) of 1-naphthol, 6.0 g (0.2 mol) of paraformaldehyde, and 15.4 g (0.10 mol) of diethyl sulfate, and 115 g of PGMEA in a 500 mL round bottom flask equipped with a condenser After inputting, a polymer represented by Chemical Formula B (MW: 1500) was obtained through the same synthesis process as in Synthesis Example 1.

[Formula B]

Hard mask Preparation of the composition

Example One

3.0 g of the compound obtained in Synthesis Example 1 was dissolved in 17 g of a cyclohexanone and N-Methyl-2-pyrrolidone 1 to 1 solution, and then filtered through a 0.1 μm Teflon filter to prepare a hardmask composition.

Example 2

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 2 was used instead of the compound obtained in Synthesis Example 1.

Example 3

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 3 was used instead of the compound obtained in Synthesis Example 1.

Example 4

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 4 was used instead of the compound obtained in Synthesis Example 1.

Example 5

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 5 was used instead of the compound obtained in Synthesis Example 1.

Example 6

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 6 was used instead of the compound obtained in Synthesis Example 1.

Example 7

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Synthesis Example 7 was used instead of the compound obtained in Synthesis Example 1.

Comparative example One

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Comparative Synthesis Example 1 was used instead of the compound obtained in Synthesis Example 1.

Comparative example 2

A hardmask composition was prepared in the same manner as in Example 1, except that the compound obtained in Comparative Synthesis Example 2 was used instead of the compound obtained in Synthesis Example 1.

Evaluation 1: Corrosion resistance

The hard mask compositions according to Examples 1 to 7 and Comparative Examples 1 to 2 were spin-coated on a silicon wafer, and then heat-treated at 240° C. for 1 minute on a hot plate, followed by heat treatment at 500° C. for 2 minutes under a nitrogen atmosphere, to obtain a thickness. A thin film of 3,000-4000 mm 3 was formed.

The formed thin film was dry etched for 100 seconds and 60 seconds, respectively, using CHF ₃ /CF ₄ mixed gas and N ₂ /O ₂ mixed gas, and the thickness of the thin film was measured again. The etch rate (BER) was calculated from the thickness and etch time of the thin film before and after dry etching by the following Equation 1.

[Calculation formula 1]

(Initial thin film thickness-thin film thickness after etching)/Etching time (Å/sec)

Table 1 shows the results.

CHF ₃ /CF ₄ bulk etch rate (Å/sec) N ₂ /O ₂ bulk etch rate (Å/sec) Comparative Example 1 28.3 27.5 Comparative Example 2 31.5 26.0 Example 1 22.0 19.8 Example 2 21.3 19.6 Example 3 20.6 19.5 Example 4 21.5 19.6 Example 5 20.2 18.7 Example 6 19.2 18.1 Example 7 19.8 18.3

Referring to Table 1, the thin films formed from the hardmask compositions according to Examples 1 to 7 have sufficient etch resistance to etching gas compared to the thin films formed from the hardmask compositions according to Comparative Examples 1 to 2, thereby improving bulk etch properties. can confirm.

Although the preferred embodiments of the present invention have been described in detail above, the scope of rights of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

Claims (14)

Monomer represented by the following formula (1):
[Formula 1]

In Chemical Formula 1,
A and A'are each independently a group represented by the following formula (2),
B is a substituted or unsubstituted C6 to C30 aromatic ring:
[Formula 2]

In Chemical Formula 2,
Ar is phenanthrene, pyrene, perylene, benzoperylene, or coronene,
X and X'are each independently a halogen atom, a hydroxyl group, an alkoxy group, an amine group, a thiol group, a carboxylic acid group, a nitrile group, an alkenyl group, an alkynyl group, an azide group, or a combination thereof,
Z ¹ is N,
Z ² is O, S, or NR ^a , where R ^a is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof,
* Is the connection point.
delete In claim 1,
In Formula 1, B is any one of the substituted or unsubstituted moieties listed in Group 1 below:
[Group 1]

In the above group 1, “~” is a connection point. In claim 1,
Monomer having a molecular weight of 500 to 1,500. Polymer formed by the polycondensation reaction of the monomer represented by the formula (1):
[Formula 1]

In Chemical Formula 1,
A and A'are each independently a group represented by the following formula (2),
B is a substituted or unsubstituted C6 to C30 aromatic ring:
[Formula 2]

In Chemical Formula 2,
Ar is an aromatic ring of C6 to C30,
X and X'are each independently a halogen atom, a hydroxyl group, an alkoxy group, an amine group, a thiol group, a carboxylic acid group, a nitrile group, an alkenyl group, an alkynyl group, an azide group, or a combination thereof,
Z ¹ is N,
Z ² is O, S, or NR ^a , where R ^a is hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a halogen atom, a halogen-containing group, or a combination thereof,
* Is the connection point. In claim 5,
X and X'in the formula (2) is a polymer that becomes a reaction site of the polycondensation reaction. In claim 5,
A polymer having a network structure. In claim 5,
In Formula 2, Ar is phenanthrene, pyrene, perylene, benzoperylene, or coronene. In claim 5,
In Formula 1, B is any one of the substituted or unsubstituted moieties listed in Group 1 below:
[Group 1]

In the above group 1, “~” is a connection point. In claim 5,
Polymer having a weight average molecular weight of 1,000 to 200,000. A monomer according to any one of claims 1, 3, and 4, a polymer according to any one of claims 5 to 10, or a combination thereof, and
menstruum
Containing
Organic film composition. Providing a layer of material over the substrate,
Applying the organic film composition according to claim 11 on the material layer,
Heat-treating the organic film composition to form a hard mask layer,
Forming a silicon-containing thin film layer on the hard mask layer,
Forming a photoresist layer on the silicon-containing thin film layer,
Forming a photoresist pattern by exposing and developing the photoresist layer,
Selectively removing the silicon-containing thin film layer and the hard mask layer using the photoresist pattern and exposing a portion of the material layer, and
Etching the exposed portion of the material layer
Containing
Method of pattern formation. In claim 12,
The step of applying the organic film composition is a pattern formation method performed by a spin-on coating method. In claim 12,
And forming a bottom anti-reflection layer (BARC) prior to forming the photoresist layer.

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