KR102107167B1 - Device for nanotube synthesis - Google Patents

Abstract

The present invention relates to a device for nanotube synthesis operated by being divided into a generation region for generating nanoclusters and a synthesis region for synthesizing the generated nanoclusters into nanotubes. The device for nanotube synthesis includes: a nanocluster generation chamber for generating nanoclusters by vaporizing a reaction material through plasma; and a nanocluster concentration adjustment chamber for diluting the concentration of the nanoclusters by supplying gas to the nanoclusters supplied from the nanocluster generation chamber.

Description

Device for nanotube synthesis

The present invention relates to a nanotube synthesis device operated by dividing into a generation region for generating a nanocluster and a synthetic region for synthesizing the generated nanocluster into nanotubes.

Nanotube (nanotube) refers to a cylindrical molecule or a collection of molecules having a tunnel structure having a size of several nanometers to hundreds of nanometers in diameter, depending on the composition, carbon nanotubes (CNT) and boron nitride nanotubes (Boron-nitride nanotube, BNNT).

First, the carbon nanotube refers to a nanostructure in the form of a tube in which a graphene of a two-dimensional structure in which one carbon atom is formed through sp ² bonds with 3 other carbon atoms is rounded. Multi-walled carbon nanotubes (MWCNT) consisting of a set of single-walled carbon nanotubes (SWCNT) and concentric cylindrical graphene shells, depending on the number of graphenes that make up the walls of the nanostructure. Nanotube).

In 1991, a method for synthesizing carbon nanotubes by an electric discharge method was introduced by Ijima Set al, Nature 354 (1991) 56 of NEC, Japan.

On the other hand, carbon nanotubes have a diameter in the range of 1 to 100 nm, and their lengths can be synthesized up to several hundreds, thereby producing various types of structures. This unique structure of carbon nanotubes is about twice the thermal conductivity of diamonds, about 1000 times higher electrical conductivity than copper, high heat resistance, high carbon-carbon bond strength, and 200 times stronger mechanical properties than steel. It has unique properties and characteristics that are not easily found in conventional materials such as elastic modulus and large aspect ratio.

The carbon nanotube synthesizing apparatus having the above-described characteristics will be described with reference to FIG. 1 as follows.

1 is a view showing a conventional carbon nanotube synthesis apparatus.

As shown, the conventional carbon nanotube synthesizing apparatus is installed spaced apart inside the chamber 10, a non-consumable carbon cathode rod 20 supplied with a negative current and a consumable carbon anode rod 30 supplied with a positive current. It is equipped.

Through this, when a current is applied to the non-consumable carbon cathode rod 20 and the consumable carbon anode rod 30, a carbon cluster is generated while the consumable carbon anode rod 30 is vaporized due to the generated high temperature arc plasma. Carbon nanotubes are synthesized as the resulting carbon cluster is condensed on the inner surface of the chamber 10.

However, such a conventional carbon nanotube synthesizing apparatus maintains a high concentration due to a large amount of carbon clusters vaporized because a high current is applied to synthesize high-crystalline carbon nanotubes at a high temperature. Due to this, a high concentration of carbon clusters cannot be synthesized with carbon nanotubes, and a large amount of carbon clusters are transformed into impurities such as amorphous carbon as a by-product, resulting in high purity (99.99%) of consumable carbon anode rod 30. Is wasted.

Moreover, since the conventional carbon nanotube synthesis apparatus generates carbon clusters during a short process time by a high current in the chamber 10, the size of the carbon clusters are large, small, and so on.

Accordingly, the size of the generated carbon clusters is different, so that the synthesis yield of the carbon nanotubes is low, the purity of the carbon nanotubes is low, the crystallinity of the synthesized carbon nanotubes decreases, and the diameter and length are generated. There are also problems.

On the other hand, the conventional boron nitride nanotube synthesizer for synthesizing boron nitride nanotubes also has the same problem as the conventional carbon nanotube synthesizer.

KR 10-1112597 B1

The present invention is to solve the problems of the prior art, the object of the present invention is to supply a region to generate a high concentration of nano-clusters through the reaction material and the generated high-concentration nano-clusters of the entire region of nanotube synthesis , By dividing the supplied high-concentration nano-cluster into a nano-composite region in a state where it is diluted with a low-concentration nano-cluster, it minimizes impurities generated by not synthesizing into nanotubes. It is to provide a nanotube synthesis device that minimizes.

Another object of the present invention is that the nanoclusters are uniformly refined into nanotubes by means of uniformly miniaturizing the size of the nanoclusters having different particle sizes, and thus the synthesis yield of the nanotubes is high and the purity of the nanotubes is good. , It is to provide a nanotube synthesis device to induce the crystallinity of the synthesized nanotubes to be improved.

As a technical idea for achieving the present invention, the nanotube synthesis apparatus of the present invention includes a nanocluster generation chamber for generating a nanocluster by vaporizing a reaction raw material through plasma; It consists of; a nano-cluster concentration adjustment chamber to dilute the concentration of the nano-cluster by supplying gas to the nano-cluster supplied from the nano-cluster generation chamber.

The nanocluster is either a carbon cluster or a boron nitride cluster.

A communication tube communicating the nanocluster generation chamber and the nanocluster concentration adjustment chamber is provided, and the communication tube may use an insulator.

The nano-cluster generating chamber includes a reaction raw material part including solid, powder, and gas; A plasma generation unit for generating a cluster by generating a nanocluster by vaporizing the reaction raw material supplied from the reaction raw material unit through a plasma arc discharge generated by an applied power source; It includes; a transport gas injection unit for supplying a carrier gas carrying the generated nano-cluster.

The nanocluster concentration adjustment chamber includes a concentration stabilization gas injection unit that supplies a concentration stabilizing gas so that the concentration of the nanocluster supplied from the nanocluster generation chamber is diluted.

The concentration stabilization gas may use at least one of helium (He), argon (Ar), nitrogen (N ₂ ), and air.

The nano-cluster concentration adjustment chamber further includes a concentration sensor that senses the concentration of the nano-cluster and generates nano-cluster detection concentration value information.

The nanotube synthesis apparatus of the present invention further includes a control panel, and the control panel comprises the nano-cluster detection concentration generated based on the nano-cluster concentration dilution interval information, which is a standard indicating a range of the reference concentration dilution value of the nano-cluster. If the value information is greater than the reference nanocluster concentration dilution section information, the concentration stabilization gas through the concentration stabilization gas injector until the concentration of the nanocluster in the nanocluster concentration adjustment chamber belongs to the reference nanocluster concentration dilution section information It performs the function of controlling to be injected.

The nano-cluster concentration adjustment chamber includes a plasma generation unit for cluster refinement; and particles of nano-clusters present in the nano-cluster concentration adjustment chamber by plasma arc discharge generated by a power applied from the plasma generation unit for cluster refinement. It leads to the size being uniformly refined.

To the concentration stabilizing gas injection unit, a reaction gas for controlling particle size is also supplied to react so that the particle size of the nanoclusters is refined.

The particle size control reaction gas may be at least one of hydrogen (H ₂ ), oxygen (O ₂ ), methane (CH ₄ ) and ethane (C ₂ H ₆ ).

In the present invention, the entire region for synthesizing nanotubes is supplied with a region for generating a high concentration nanocluster through a reaction raw material, and the generated high concentration nanocluster is supplied, and the supplied high concentration nanocluster is diluted with a low concentration nanocluster. By dividing it into a region synthesized with nanotubes in the state, it minimizes impurities generated by not being synthesized into nanotubes, and consequently, it minimizes waste of high-purity reaction raw materials.

In addition, according to the present invention, the nanoclusters are uniformly refined into nanotubes by means of uniformly miniaturizing the size of the nanoclusters having different particle sizes, and thus the synthesis yield of the nanotubes is high and the purity of the nanotubes is good. It also has the effect of inducing the crystallinity of the synthesized nanotubes to be uniform in diameter and length.

1 is a view showing a conventional carbon nanotube synthesis apparatus.
2 is a view showing a carbon nanotube synthesis apparatus according to an embodiment of the present invention.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the present embodiments allow the disclosure of the present invention to be complete, and the ordinary knowledge in the technical field to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, and the invention is defined by the claims.

Meanwhile, the terms used in the present specification are for explaining the embodiments and are not intended to limit the present invention. In this specification, the singular form also includes the plural form unless otherwise specified in the phrase. As used herein, "comprises" and / or "comprising" refers to the components, steps, operations and / or elements present in one or more other components, steps, operations and / or elements. Or do not exclude adding. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The nanotube synthesizing apparatus of the present invention largely dilutes the concentration of the nanocluster by supplying gas to the nanocluster generation chamber for generating nanoclusters by vaporizing the reaction material through plasma and the nanocluster supplied from the nanocluster generation chamber It consists of a nanocluster concentration adjustment chamber.

Here, the reaction raw material may be used by selecting one of carbon or boron-nitride according to the constituent components, and the type of the reaction raw material may also be used by selecting various kinds such as solid, powder or gas.

The detailed configuration of the nano-cluster generation chamber that performs the aforementioned functions includes a reaction raw material portion including solid, powder, and gas, and a reaction raw material supplied from the reaction raw material portion through plasma arc discharge generated by an applied power source. It consists of a plasma generating unit for generating a nano-cluster by vaporization and a transport gas injection unit for supplying a carrier gas carrying the generated nano-cluster.

Here, the plasma generating unit may use various configurations. There are high-speed oxygen-fuel ("HVOF") devices for spraying molten powder compositions of thermoplastic compounds, thermoplastic / metallic composites, or thermoplastic / ceramic composites to form a coating on a base material. That is, it includes an HVOF flame generator for providing an HVOF gas stream to a fluid cooled nozzle.

A portion of the gas stream can be reversed in flow direction to preheat the powder, and the preheated powder is injected into the main gas stream at a downstream location in the nozzle. Forced air and vacuum sources are provided in the shroud surrounding the nozzle to cool the molten powder in flight before being deposited in the base material.

In addition, a mixture of oxygen-fuel gas, air-fuel gas, air-liquid fuel, oxygen-liquid fuel, or electric arc, and plasma as a heat medium for melting individual droplets and ejecting them into a prepared base material The device can be used.

That is, wire combustion, powder combustion, twin wire electric arc, plasma-powder, high-speed oxygen-fuel gas-powder, high-speed oxygen-fuel gas- It can be subdivided into wire, high-speed air-liquid fuel-powder, high-speed oxygen-liquid fuel-powder, detonation gun powder, and water cannon plasma, basically wire burning, powder It can be divided into combustion, plasma and electric arc.

On the other hand, the nano-cluster generation chamber and the nano-cluster concentration adjustment chamber are communicated through a communication tube, where the nano-cluster generation chamber and the nano-cluster concentration adjustment chamber can be used as an insulating material for the communication tube.

As such, the main reason for using the material of the communication tube as an insulator is a nanocluster that dilutes the concentration of the nanocluster by supplying gas to the nanocluster generation chamber and the process power of the nanocluster generation chamber that vaporizes the reaction material through plasma to generate the nanocluster. This is to prevent mutual interference between process powers between the two chambers because the process powers of the concentration adjustment chambers are different.

The carrier gas supplied through the transport gas injection unit may use helium (He), argon (Ar), nitrogen (N ₂ ), and a mixed gas composed of air or a combination thereof.

In addition, the detailed configuration of the nanocluster concentration adjustment chamber performing the above-mentioned function includes a concentration stabilization gas injection unit that supplies a gas for concentration stabilization so that the concentration of the nanocluster supplied from the nanocluster generation chamber is diluted through a communication pipe.

Here, the gas for concentration stabilization may use helium (He), argon (Ar), nitrogen (N ₂ ), and a mixed gas composed of air or a combination thereof.

In addition, the nano-cluster concentration adjustment chamber further includes a concentration detection sensor that detects the concentration of the nano-cluster and generates nano-cluster detection concentration value information for each preset period.

To this end, the nanotube synthesis apparatus of the present invention is provided with a control panel for controlling the concentration of the nano-cluster and controlling the size of the nano-cluster particles in addition to controlling the operation of the concentration sensor.

As described above, the provided control panel stores and manages various information for adjusting the concentration of the nanocluster and controlling the size of the nanocluster particles, and as one of them, the nanocluster concentration dilution section, which is a standard representing a range of the standard concentration dilution value of the nanocluster. Information is stored and managed.

Through this, if the concentration value information of the nano-cluster detected based on the reference nano-cluster concentration dilution section information is greater than the reference nano-cluster concentration dilution interval information, the concentration of the nano-cluster in the nano-cluster concentration adjustment chamber is the reference nano-cluster concentration dilution. It performs a function to control the concentration stabilization gas to be injected through the gas injection unit for concentration stabilization until it belongs to the section information.

Through this, by diluting the high-concentration nano-cluster to the low-concentration nano-cluster, it minimizes impurities generated by not being synthesized into nanotubes, and consequently, it minimizes waste of high-purity reaction raw materials.

On the other hand, the size of the nano-cluster present in the nano-cluster concentration adjustment chamber is generated during a short process time by a high current in the nano-cluster generation chamber, so that the size of the nano-cluster is large and small.

Accordingly, the nano-cluster concentration adjustment chamber is provided with a plasma generation unit for refinement of the cluster so that the particle size of the nano-clusters having respective sizes is uniformly refined.

As described above, the particle size of the nanoclusters present in the nanocluster concentration adjustment chamber is uniformly refined through plasma arc discharge generated by the power applied from the plasma generation unit for cluster refinement.

That is, the high energy generated by the plasma arc discharge is applied to the nanocluster having a large particle size, and thus the particle size of the nanocluster is finely adjusted.

At this time, in the concentration stabilization gas injection unit provided in the nanocluster concentration adjustment chamber to react so that the particle size of the nanocluster can be refined more quickly, the reaction gas for controlling the particle size is supplied to react so that the particle size of the nanocluster is fine. Lose.

As a reaction gas for controlling particle size to perform this function, a mixed gas composed of hydrogen (H ₂ ), oxygen (O ₂ ), methane (CH ₄ ) and ethane (C ₂ H ₆ ) or a combination thereof may be used.

Through this, when the nanocluster is a carbon cluster, it is combined with hydrogen (H ₂ ) or oxygen (O ₂ ) to become hydrocarbon or carbon dioxide, thereby miniaturizing the carbon cluster with large particles.

In addition, when the nanocluster is a boron nitride cluster, it is combined with hydrogen (H ₂ ) to form a BNH compound, thereby minimizing the boron nitride cluster having large particles.

When explaining the nanotube synthesis apparatus of the present invention made of such a configuration as an embodiment of the carbon nanotube synthesis apparatus is as follows.

2 is a view showing a carbon nanotube synthesis apparatus according to an embodiment of the present invention.

As shown, the carbon nanotube synthesis apparatus according to an embodiment of the present invention is largely composed of a carbon cluster generation chamber 100 and a carbon cluster concentration adjustment chamber 200.

First, the carbon cluster generation chamber 100 is a member that vaporizes a reaction raw material through plasma to generate a carbon cluster.

The detailed configuration of the carbon cluster generating chamber 100 performing such a function includes a consumable anode carbon rod 110 used as an anode (+), a non-consumable cathode carbon rod 120 used as a cathode (-), and the above. The consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120, the power supply unit 130 for applying power to the consumable anode carbon rod 110 and the ratio by the power applied through the power supply unit 130 Consists of a transfer gas injection unit 140 for supplying a carrier gas carrying a carbon cluster generated by the consumable anode carbon rod 110 is vaporized due to the plasma arc discharge generated near the end of the consumable cathode carbon rod 120.

Here, the consumable anode carbon rod 110 is made of a carbon powder having a purity of 99.99%, and the carbon cluster generated through this also has a high purity carbon purity, and a large amount of power is applied because a high current voltage is also applied. A carbon cluster, that is, a high concentration carbon cluster is produced.

On the other hand, since the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120 have a structure arranged side by side due to the arrangement structure characteristics, plasma arc discharge generated is near the ends of the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120. Should only occur in

To this end, only the vicinity of the ends of the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120 are located in the optimum region of the plasma arc discharge generation (1.0 mm ∼ 2.5 mm), which is a section indicating the optimum distance range for generating the plasma arc discharge. The gap between the front end of the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120 is wide so that most of the rest of the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120 are farther than an optimal interval for generating plasma arc discharge. , It is preferable to arrange the space between the ends of the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120 to have a narrow diagonal arrangement structure.

In addition, the carrier gas supplied from the transfer gas injection unit 140 may use a mixed gas composed of argon (Ar), nitrogen (N ₂ ) and air or a combination thereof.

In addition, although not shown in the drawings, it is preferable to cool the inside of the carbon cluster generation chamber 100 by using a cooling medium containing liquid or gas so that a high temperature atmosphere generated by plasma arc discharge can be cooled.

In addition, the carbon cluster generation chamber 100 is equipped with a stacking box in which a plurality of consumable anode carbon rods 110 are loaded, and a consumable anode carbon rod through a draw roller for drawing out the consumable anode carbon rods 110 of the provided loading box ( 110) can be provided to be continuously supplied.

In addition, the carbon cluster generated in the carbon cluster generation chamber 100 is supplied to the carbon cluster concentration adjustment chamber 200 by a carrier gas, at this time, the carbon cluster generation chamber 100 and the carbon cluster concentration adjustment chamber 200 It is implemented through a communication pipe 300 to communicate between.

Here, the material of the communication pipe 300 may use an insulator, and thus, the main reason for using the material of the communication pipe 300 as an insulator is the process power and the carbon cluster of the carbon cluster generation chamber 100 that generates the carbon cluster. This is to prevent the process powers between the two chambers 100 and 200 from interfering with each other because the process powers of the carbon cluster concentration adjustment chambers 200 that supply gas to dilute the concentrations of the carbon clusters are different from each other.

Accordingly, the side wall of the carbon cluster generation chamber 100 connected to one side of the communication pipe 300 may be connected to a cluster generating side insulator extension block 150 in communication with one side of the communication pipe 300 by being extended and connected thereto. The material of the insulator extension block 150 also uses an insulator, and in addition, the cluster sizing side insulator extension communicated with the other side of the communication pipe 300 also on the side wall of the carbon cluster concentration adjustment chamber 200 connected to the other side of the communication pipe 300 Block 201 may be extended and connected, and the material of the extended-connected cluster sizing-side insulator extension block 201 may also use insulators, so that the process power between both chambers 100 and 200 can maximize the efficiency of mutual interference. have.

In addition, by positioning the ends of the consumable anode carbon rod 110 and the non-consumable cathode carbon rod 120 disposed in the carbon cluster generation chamber 100 as close as possible to the communication hole side of the cluster generation-side insulator extension block 150, It can be provided so that the generated high concentration of carbon cluster can be directly supplied through the carbon cluster concentration adjustment chamber 200 through the communication hole of the production side insulator extension block 150.

The carbon cluster concentration adjustment chamber 200 supplies gas to the carbon cluster supplied from the carbon cluster generation chamber 100 and synthesizes it into carbon nanotubes in a state in which the concentration of the carbon cluster is diluted, so that the supplied carbon cluster is carbon nano It is a member that minimizes the waste of high-purity carbon clusters by minimizing the impurities generated by not being synthesized into tubes.

That is, it is divided into a region for generating a carbon cluster and a region for synthesizing the generated carbon cluster into carbon nanotubes. In the carbon cluster generation chamber 100, which is a region for generating a carbon cluster, a high purity carbon rod is applied through application of high current. In the carbon cluster concentration adjustment chamber 200, which is an area for rapidly controlling the generation of a high concentration carbon cluster and synthesizing the generated carbon cluster into carbon nanotubes during the shortest process time, carbon in a state where the high concentration carbon cluster is diluted is carbon. By controlling the nanotubes to be synthesized, it provides the advantage of controlling so that the carbon nanotubes can be synthesized as much as possible without wasting a high-purity carbon cluster.

As such, the carbon cluster concentration adjustment chamber 200 that provides an advantage is a concentration stabilizing gas that supplies a gas for concentration stabilization so that the concentration of the nanocluster supplied from the carbon cluster generation chamber 100 is diluted through the communication pipe 300. It includes an injection unit 210.

Here, the concentration stabilization gas supplied through the concentration stabilization gas injection unit 210 provided in the carbon cluster concentration adjustment chamber 200 is helium (He), argon (Ar), nitrogen (N ₂ ) and air or these It is possible to use a mixed gas consisting of a combination of.

In addition, the carbon cluster concentration adjustment chamber 200 may be provided with a concentration detection sensor 220 that detects the concentration of the carbon cluster and generates carbon cluster detection concentration value information for each predetermined cycle.

As such, the type of the concentration detection sensor 220 provided may be a residual gas analysis (RGA) sensor or an optical emission spectroscopy (OES) sensor.

Here, the residual gas analysis (RGA) sensor is suitable for measuring trace gas concentration in a vacuum system and operates by analyzing a sample gas. The sample gas is ionized and the ions are separated based on the massto-charge ratio by a quadrupolar electric field using a combination of direct current (DC) and RF potentials. This instrument measures the flux of ions against the mass to charge ratio, thereby providing detailed chemical analysis of the sample gas.

And the OES (Optical Emission Spectrometer) sensor is a sensor member that measures the gas concentration based on the measured spectrum by measuring the spectrum from a position on the substrate while the plasma is generated by the plasma source.

In addition, in addition to the operation control of the concentration sensor 220 mentioned above, a control panel panel is provided to perform overall operation control for the concentration control of the carbon cluster and the size control of the carbon cluster particles.

As described above, the control panel is provided with various information for controlling the concentration of the carbon cluster and controlling the size of the carbon cluster particles. One of them is a reference carbon cluster concentration dilution section, which is a value indicating a range of the standard concentration dilution value of the carbon cluster. Information is stored and managed.

Through this, the control panel, if the carbon cluster detection concentration value information generated based on the reference carbon cluster concentration dilution section information is greater than the reference carbon cluster concentration dilution section information, the concentration of the carbon cluster in the carbon cluster concentration adjustment chamber 200 is the reference carbon. It performs the function of controlling so that the gas for concentration stabilization is injected through the gas injection unit for concentration stabilization until it belongs to the cluster concentration dilution section information.

Through this, by diluting the high-concentration carbon cluster with the low-concentration carbon cluster, impurities generated due to the inability to be synthesized with carbon nanotubes are minimized, and as a result, the waste of the high-purity carbon cluster is minimized.

On the other hand, the size of the carbon cluster present in the carbon cluster concentration adjustment chamber 200 is generated during the short-term process time by a high current in the carbon cluster generation chamber 100, the size of the carbon cluster is large, some are small And so on.

Accordingly, the carbon cluster concentration adjustment chamber 200 is provided with a plasma generation unit for refinement of the cluster so as to uniformly refine the particle size of the carbon cluster having a respective size.

As described above, detailed configurations of the plasma generation unit for miniaturization of the clusters provided are the positive electrode block 230 used as the positive electrode (+), the negative electrode plate 240 used as the negative electrode (-), and the positive electrode block 230 and the negative electrode plate ( 240) is made of a power supply unit 130 for applying power.

Here, an induction block 250 for guiding the carbon cluster supplied from the carbon cluster generation chamber 100 to move toward the cathode plate 240 inside the carbon cluster concentration adjustment chamber 200 is disposed between the anode blocks 230. Can be provided.

Through this, when power is supplied from the power supply unit 130, the particle size of the carbon cluster present in the carbon cluster concentration adjustment chamber 200 is uniformly refined through plasma arc discharge generated by the applied power.

That is, the high energy of the plasma arc discharge generated from the anode block 230 and the cathode plate 240 is applied to the carbon cluster having a large particle diameter, so that the particle diameter of the carbon cluster is uniformly adjusted as it becomes fine.

At this time, in the concentration stabilizing gas injection unit 210 provided in the carbon cluster concentration adjustment chamber 200 to react so that the particle diameter of the carbon cluster can be more rapidly refined, the particle size of the carbon cluster is reacted to be refined Control reaction gas is supplied.

Here, the reaction gas for particle size control is by using a mixed gas composed of hydrogen (H ₂ ), oxygen (O ₂ ), or a combination thereof, and hydrogen (H ₂ ) and oxygen (O ₂ ) are combined with a carbon cluster to form particles. Refine the large carbon cluster. At this time, the inside of the carbon cluster concentration adjustment chamber 200 may be cooled by using a cooling medium containing liquid or gas so that the high temperature atmosphere generated by the plasma arc discharge can be cooled.

The finely homogenized carbon cluster is synthesized as a carbon nanotube in the negative electrode plate 240, and thus has a high yield of carbon nanotube synthesis, good purity of the carbon nanotube, and good crystallinity of the synthesized carbon nanotube. Induce.

In addition, as part of mass production of carbon nanotubes, a lifting member for vertically moving the negative electrode plate 240 to collect carbon nanotubes synthesized in the negative electrode plate 240 is provided, and the negative electrode plate 240 is moved up and down. In contact, a collection blade 260 for collecting the synthesized carbon nanotubes may be included.

Here, the lifting member may be implemented through a rack and pinion, a cylinder, or a combination of various gears.

In addition, the collecting blade 260 may also be provided with a horizontal moving member for horizontally moving to collect the collected carbon nanotubes, and the horizontal moving member may also be implemented through a combination of rack and pinion, cylinder, or various gears. have.

100: carbon cluster generation chamber
110: consumable anode carbon rod
120: non-consumable cathode carbon rod
130: power supply
140: transfer gas injection unit
150: Insulator extension block on cluster creation side
200: carbon cluster concentration adjustment chamber
201: Cluster extension side insulator extension block
210: gas injection unit for concentration stabilization
220: concentration detection sensor
230: anode block
240: negative electrode plate
250: induction block
260: collection blade
300: communication tube

Claims (11)

A nano-cluster generation chamber that vaporizes the reaction material through plasma to generate nano-clusters;
Nano-tube synthesis apparatus comprising a; nano-cluster concentration adjustment chamber for diluting the concentration of the nano-cluster by supplying gas to the nano-cluster supplied from the nano-cluster generation chamber.
According to claim 1,
The nano-cluster is a nanotube synthesis device characterized in that the carbon cluster or boron nitride cluster.
According to claim 1,
A nanotube synthesis device comprising a communication tube communicating the nanocluster generation chamber and the nanocluster concentration adjustment chamber, the communication tube being an insulator.
According to claim 1,
The nano cluster generation chamber,
Reaction raw material containing solid, powder, gas; A plasma generation unit for generating a cluster by generating a nanocluster by vaporizing the reaction raw material supplied from the reaction raw material unit through a plasma arc discharge generated by an applied power source; Nanotube synthesis device comprising a; transfer gas injection unit for supplying a carrier gas carrying the generated nano-cluster.
According to claim 1,
The nanocluster concentration adjustment chamber,
And a concentration stabilizing gas injection unit supplying a gas for concentration stabilization such that the concentration of the nano cluster supplied from the nano cluster generation chamber is diluted.
The method of claim 5,
The concentration stabilizing gas is at least one of helium (He), argon (Ar), nitrogen (N ₂ ), and air.
The method of claim 5,
In the nanocluster concentration adjustment chamber,
A nanotube synthesis device further comprising; a concentration detection sensor that detects the concentration of the nanoclusters and generates nanocluster detection concentration value information.
The method of claim 6,
Further comprising a control panel,
The control panel, when the generated nano-cluster detection concentration value information is greater than the reference nano-cluster concentration dilution interval information based on phosphorus-based nano-cluster concentration dilution interval information indicating the range of the reference concentration dilution value of the nano-cluster. A nanotube synthesis apparatus characterized in that the concentration stabilization gas is injected through the concentration stabilization gas injector until the concentration of the nanocluster in the cluster concentration adjustment chamber falls within the reference nanocluster concentration dilution section information.
The method of claim 5,
The nano-cluster concentration adjustment chamber includes a plasma generation unit for cluster refinement;
Nanotube synthesis apparatus characterized in that the particle size of the nanoclusters present in the nanocluster concentration control chamber is uniformly refined by plasma arc discharge generated by a power applied from the plasma generation unit for cluster refinement.
The method of claim 9,
A nanotube synthesis device characterized in that a reaction gas for controlling particle size is also supplied to the gas injection part for concentration stabilization so that the particle size of the nanocluster is refined.
The method of claim 10,
The particle size control reaction gas is hydrogen (H ₂ ), oxygen (O ₂ ), methane (CH ₄ ) and ethane (C ₂ H ₆ ) Nanotube synthesis apparatus characterized in that it comprises at least one.

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